CN103680988B - A kind of solaode based on selectivity tunnelling principle and preparation method thereof - Google Patents
A kind of solaode based on selectivity tunnelling principle and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of solaode based on selectivity tunnelling principle and preparation method thereof.Comprise the steps: that (1) prepares the wide bandgap semiconductor of surfacing；Described wide bandgap semiconductor is titanium dioxide or zinc oxide；(2) Graphene is transferred on a surface of described wide bandgap semiconductor, then proceedes on described Graphene, assemble light excitation material and obtain light excitation material layer；(3) in the low work function metal of another surface-assembled of described wide bandgap semiconductor, described solaode is namely obtained.The separation of charge of solaode provided by the invention is based on brand-new selectivity tunneling mechanism, and electrons cross formula tunnelling enters titanium dioxide conduction band, hole can not stride across and by the electron reduction on Graphene.Namely only a monoatomic layer Graphene just successfully instead of the electrolyte solution in conventional dyes sensitization solar battery and to electrode, enormously simplify the structure of solaode.
Description
Technical field
The present invention relates to a kind of solaode based on selectivity tunnelling principle and preparation method thereof.
Background technology
Solaode be currently with solar energy the most efficiently, one of the most promising means.And the solaode such as current commercial crystalline silicon, non-crystalline silicon, GaAs, CIGS, cadmium telluride widely uses (Nature.2001,414,338) due to what its high cost limited solaode.In order to reduce the cost of solaode and meet the use of the special occasions solar energys such as BIPV, organic flexible solaode (Chem.Rev.2010,110,6689), DSSC (Chem.Rev.2010,110,6595), the research and development of the third generation novel solar battery such as nano solar battery (Chem.Rev.2010,110,6873) cause and study interest widely.In order to make solar electrical energy generation more universal, now in the urgent need to proposing new solaode principle and thinking to prepare efficient, cheap, practical solaode.
Graphene is a kind of two dimensional surface semi-metallic with monoatomic layer thickness, has the electricity of uniqueness, optics, mechanical characteristic (Rev.Mod.Phys.2009,81,109).Due to its good electric conductivity, chemical stability and light transmission, it is attempted and has been applied to various film battery and (NaturePhoton.2010,4,611) in dye-sensitized cell as a new generation's electrode material.Additionally, due to Graphene Dirac cone shaped energy level structure, level of energy is adjustable, monoatomic layer thickness, it is possible to achieve light electric energy regulates and controls, these will provide new opportunity for design novel solar battery.
Summary of the invention
It is an object of the invention to provide a kind of solaode based on selectivity tunnelling principle and preparation method thereof, in the present invention, electronics receiving layer and hole receiving layer have been placed on the homonymy of light excitation material by solaode, in conjunction with the relation that electron tunneling mates with level of energy, the homonymy achieving light induced electron and hole from brand-new visual angle is collected, the electrolyte of complexity in tradition dye-sensitized solar battery is instead of and to electrode, it is provided that the solaode of brand new with a simple layer graphene.
The preparation method of a kind of solaode based on selectivity tunnelling principle provided by the present invention, comprises the steps:
(1) wide bandgap semiconductor of surfacing is prepared；
Described wide bandgap semiconductor is titanium dioxide or zinc oxide；
(2) Graphene is transferred on a surface of described wide bandgap semiconductor, then proceedes on described Graphene, assemble light excitation material and obtain light excitation material layer；
(3) in the low work function metal of another surface-assembled of described wide bandgap semiconductor, described solaode is namely obtained.
In above-mentioned preparation method, described wide bandgap semiconductor is titanium dioxide, and it is by following 1)-4) in any one method prepare:
1) surface of titanium dioxide single crystalline substrate carries out machine glazed finish, then performs etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product；
2) being deposited with titanium through magnetron sputtering in the titanium sheet of machine glazed finish, then anneal in oxygen and titanyl is melted into titanium dioxide, then perform etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product；
3) in oxygen plasma atmosphere, with Titanium for target, it is deposited with titanium dioxide with magnetron sputtering, then performs etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product；
4) under vacuum, with titanium dioxide granule for target, with electron beam evaporation plating with titanium dioxide, then perform etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product.
In above-mentioned preparation method, described wide bandgap semiconductor is zinc oxide, and it is prepared by following method: the surface of Zinc oxide single crystal carries out machine glazed finish, then performs etching to carry out chemical polishing successively in HF aqueous solution and oxygen plasma, to obtain final product.
In above-mentioned preparation method, in step (2), described smooth excitation material can contaminate sensitive molecule for Z907, contaminate quick Dye-1 molecule, poly-3-hexyl thiophene or PbS；
Described Z907 contaminates the structural formula such as shown in formula I of sensitive molecule, and the structural formula of described quick Dye-1 molecule is such as shown in formula II,
In above-mentioned preparation method, described smooth excitation material is assembled by following method:
1) described smooth excitation material is that described Z907 contaminates sensitive molecule, and described Z907 is contaminated sensitive molecule and is assembled on described Graphene by dip coating or spin-coating method；The thickness of the light excitation material layer obtained is the single Z907 thickness contaminating sensitive molecule；
2) described smooth excitation material is the quick Dye-1 molecule of described dye, and described dye quick Dye-1 molecule is assembled on described Graphene by dip coating；The thickness that thickness is the quick Dye-1 molecule of single dye of the light excitation material layer obtained；
3) described smooth excitation material is described poly-3-hexyl thiophene, and described poly-3-hexyl thiophene is assembled on described Graphene by spin-coating method；The thickness of the light excitation material layer obtained is 3～5nm；
4) described smooth excitation material is PbS, under vacuum, carries out electron beam evaporation plating with PbS powder for target；The thickness of the light excitation material layer obtained is 3～5nm.
In above-mentioned preparation method, in step (3), described low work function metal can be titanium, aluminum, indium or indium gallium alloy.
In above-mentioned preparation method, described low work function metal is assembled by following method:
1) described low work function metal is titanium, with Titanium for target, in argon plasma atmosphere, carries out assembling titanium through magnetron sputtering；
2) described low work function metal is aluminum, with metallic aluminium for target, in argon plasma atmosphere, carries out assembling aluminum through magnetron sputtering；
3) described low work function metal is indium, with indium metal for target, under vacuum, carries out assembling indium through heat evaporation；
4) described low work function metal is indium gallium alloy, and the indium gallium alloy of liquid drips to the surface of described wide bandgap semiconductor, then flattens with copper sheet.
Invention further provides the solaode prepared by said method.
Structure and the operation principle of solaode provided by the invention be: the one side at wide bandgap semiconductor assembles a layer graphene；Then one layer of light excitation material of assembling on Graphene；Last one layer of low work function metal of backside deposition at wide bandgap semiconductor.Under light illumination, excitation material produces hole-electron pair, the interface of wide bandgap semiconductor and Graphene can optionally allow light induced electron tunnelling stride across the conduction band entering wide bandgap semiconductor and finally be collected by low work function metal, hole can not stride across and by electron reduction on Graphene, thus realizing separation of charge.
Solaode provided by the invention utilizes selectivity tunnelling principle, and the homonymy achieving light induced electron and hole from brand-new visual angle is collected.Instead of electrolyte complicated in tradition dye-sensitized solar battery with to electrode with a simple layer graphene, device architecture is simple, and theoretical electricity conversion is high, it is contemplated that have huge applications potentiality in following field of solar energy utilization.
The present invention has the advantage that
1, the separation of charge of solaode provided by the invention is based on brand-new selectivity tunneling mechanism, and electrons cross formula tunnelling enters titanium dioxide conduction band, hole can not stride across and by the electron reduction on Graphene.Namely only a monoatomic layer Graphene just successfully instead of the electrolyte solution in conventional dyes sensitization solar battery and to electrode, enormously simplify the structure of solaode.
2, solaode provided by the invention is without relying on electrolyte solution auxiliary charge transfer, and simple in construction is high without any liquid, safety, it is easier to large-scale production and encapsulation.
3, the selection of material category in the preparation method of solaode provided by the invention and preparation method thereof is relatively freely various: wide bandgap semiconductor can select titanium dioxide or zinc oxide；The preparation of titanium dioxide can select with heat oxidized metal titanium, magnetron sputtering evaporation titanium dioxide, electron beam evaporation plating titanium dioxide or directly use single-chip；Light excitation material can select Ru class dye sensitive molecule (Z907), D-A type dye sensitive molecule (Dye-1), high polymer class photoelectric conversion material (P3HT), quantum class material (PbS)；The Ohmic contact electronics collection material at the titanium dioxide back side can select the low work function materials such as titanium, aluminum, indium.
4, grapheme material used in the solaode of the present invention, contaminates the electro-conductive glass of quick used in battery and platinum to electrode compared to tradition, has frivolous, transparent, good conductivity, abundant raw materials, the advantages such as preparation is convenient, cheap.
Accompanying drawing explanation
Fig. 1 is structure and the principle schematic of the solaode of the present invention.
Fig. 2 is the AFM phenogram of the super flat titanium dioxide surface pattern in the embodiment of the present invention 1.
Fig. 3 is that in the embodiment of the present invention 1, Z907 dye molecule schemes ((a)) and AFM figure (b) at the XPS that graphenic surface monolayer assembles).
Fig. 4 is the photoelectric properties figure of the solaode of the embodiment of the present invention 1 preparation.
Fig. 5 is that in the embodiment of the present invention 2, D-A type Dye-1 dye molecule assembles XPS phenogram at graphenic surface.
Fig. 6 is the photoelectric properties figure of the solaode of the embodiment of the present invention 2 preparation.
Fig. 7 is that in the embodiment of the present invention 3, P3HT assembles phenogram, the structural representation that Fig. 7 (a) is P3HT on Graphene, and Fig. 7 (b) characterizes collection of illustrative plates for Raman, and Fig. 7 (c) characterizes collection of illustrative plates for XPS.
Fig. 8 is the photoelectric properties figure of the solaode of the embodiment of the present invention 3 preparation.
Fig. 9 is the phenogram that in the embodiment of the present invention 4, PbS quantum assembles on Graphene.
Figure 10 is the photoelectric properties figure of the solaode of the embodiment of the present invention 4 preparation.
Detailed description of the invention
The experimental technique used in following embodiment if no special instructions, is conventional method.
Material used in following embodiment, reagent etc., if no special instructions, all commercially obtain.
Embodiment 1, with single crystal titanium dioxide be wide bandgap semiconductor, Z907 dyestuff be light excitation material antetype device
Assemble the structure chart of antetype device and principle schematic as shown in Figure 1.
One side at titanium dioxide assembles a layer graphene；Then one layer of light excitation material of assembling on Graphene；Last one layer of low work function metal of backside deposition at titanium dioxide.Under light illumination, excitation material produces hole-electron pair, the interface of titanium dioxide and Graphene can optionally allow light induced electron tunnelling stride across enter titanium dioxide conduction band finally collected by low work function metal, hole can not stride across and by electron reduction on Graphene, thus realizing separation of charge.
Concrete device preparation method is as follows:
1, super flat titanium dioxide is prepared: titanium dioxide single crystalline is carried out one side machine glazed finish, 5min is etched with the HF aqueous solution of 30wt%, then in the oxygen plasma of 30W, etch 1min, the AFM characterization result in Fig. 2, finally give the surface titanium dioxide close to atomically flating.
2, transfer graphene to titanium dioxide surface: on Copper Foil, prepare monoatomic layer Graphene by chemical vapour deposition (CVD) (CVD) method, using polymethyl acrylate (PMMA) as supporting that layer is spun on graphene layer, use FeCl3Copper sheet is dissolved and then transfers graphene to titanium dioxide surface with PMMA for auxiliary layer, at 40 DEG C, first toast 5min after transfer up the solvent of Graphene and titanium dioxide surface is toasted dry, then at 130 DEG C, baking 5min ensures that between Graphene and titanium dioxide, contact is closely again, finally soaks 5min in 100 DEG C of micro-acetone solns boiled and will shift auxiliary layer PMMA removal.
3, on Graphene, one layer of Z907 of assembling contaminates sensitive molecule: Graphene is immersed in 30min in 1:1 (v/v) acetonitrile of 0.3mMZ907 molecule and t-butanol solution with dip coating, then with the slow-paced lift sample of 1mm/s, characterized by XPS and AFM as shown in Figure 3 it was determined that the Z907 of monolayer contaminates sensitive molecule by success ordered fabrication on Graphene.
4, the another side of titanium dioxide titanium sheet assembles low work function metal: use magnetron sputtering with the Titanium of the deposition rate 100nm of 0.02nm/s with Titanium in argon plasma atmosphere for target, to form Ohmic contact with titanium dioxide and collects the electronics transmitted on titanium dioxide conduction band.
The antetype device of the single crystal titanium dioxide of preparation to be wide bandgap semiconductor Z907 dyestuff be light excitation material is carried out photoelectric properties sign, the current-voltage output relation collection of illustrative plates under etalon optical power as shown in Fig. 4 (a) and the electricity conversion collection of illustrative plates under each monochromatic light wave band as shown in Fig. 4 (c) can be obtained, excite the optical absorption characteristics of dyestuff can obtain prepared solaode there is interior electricity conversion up to 40% (shown such as Fig. 4 (d)) in conjunction with assembling light.And from Fig. 4 (b) electricity conversion with light intensity variation relation collection of illustrative plates it can be seen that the more weak electricity conversion of light intensity is more high.These show that solaode prepared by the present embodiment has the low light level characteristic that high electricity conversion is become reconciled.
Embodiment 2, with single-crystal zinc-oxide be wide bandgap semiconductor, D-A type dye sensitive molecule be light excitation material antetype device
1, prepared by super flat zinc oxide: Zinc oxide single crystal is carried out one side machine glazed finish, etches 30s with the HF aqueous solution of 5wt%, then etches 1min in the oxygen plasma of 30W.
2, zinc oxide surface is transferred graphene to: on Copper Foil, prepare monoatomic layer Graphene by chemical vapour deposition (CVD) (CVD) method, then super flat zinc oxide surface is transferred graphene to PMMA for auxiliary layer, at 30 DEG C, first toast 10min after transfer up the solvent of Graphene and zinc oxide surface is toasted dry, then at 120 DEG C, baking 6min ensures that between Graphene and zinc oxide, contact is closely again, finally soaks 3min in the acetone soln of 200 DEG C of ebuillition of heated and will shift auxiliary layer PMMA removal.
3, one layer of D-A type of assembling dye sensitive molecule on Graphene: with dip coating, Graphene is immersed in 0.5mM D-A type Dye-1 molecule (formula I) o-dichlorobenzene solution in 30min, then with the slow-paced lift sample of 1mm/s, the monolayer Dye-1 molecule successful ordered fabrication on Graphene is realized as shown in Figure 5.
4, the another side aoxidizing zinc metal sheet assembles low work function metal material: at 1.0 × 1.0cm2The back side of zinc oxide wafer drips 100 μ L liquid indium gallium alloys, is then pressed onto on liquid indium gallium alloy by smooth copper sheet.Wherein forming Ohmic contact between indium gallium alloy and zinc oxide, copper sheet is responsible for further by electric transmission to external circuit.
The antetype device of the single-crystal zinc-oxide of preparation to be wide bandgap semiconductor D-A type dyestuff be light excitation material is carried out photoelectric properties sign.The current-voltage output relation collection of illustrative plates under etalon optical power as shown in Fig. 6 (a) and the electricity conversion collection of illustrative plates under each monochromatic light wave band as shown in Fig. 6 (c) can be obtained, assemble light in conjunction with such as Fig. 6 (b) and excite the optical absorption characteristics of dyestuff can obtain prepared solaode there is the interior electricity conversion (as Suo Shi Fig. 6 (d)) of 10%.These show the electricity conversion that solaode prepared by the present embodiment has had.
Embodiment 3, titanium dioxide are the antetype device of semiconductor layer, high polymer type light excitation material base
1, prepared by electronics collecting layer and titanium dioxide semiconductor layer: with the electronics collecting layer that titanium sheet is back surface ohmic contacts of polishing, then titanium sheet after a polish is deposited with the titanium of 500nm with 0.01nm/s speed magnetron sputtering, titanyl is melted into titanium dioxide by the 3h that then anneals in 700 DEG C of oxygen atmosphere, finally carry out chemical polishing and etch 5min at the HF aqueous solution of 30wt%, the oxygen plasma of 30W etches 1min.
2, titanium dioxide surface is transferred graphene to: on Copper Foil, grow monoatomic layer Graphene by chemical vapour deposition (CVD) (CVD) method, titanium dioxide surface is transferred graphene to for auxiliary layer with PMMA, at 50 DEG C, first toast 5min after transfer up the solvent of Graphene and titanium dioxide surface is toasted dry, then at 120 DEG C, toast contact between 8min guarantee Graphene and titanium dioxide more closely, in the acetone soln of 80 DEG C of heating, finally soak 10min will shift auxiliary layer PMMA removal.
3, on Graphene, high polymer type light excitation material is assembled: with spin-coating method by poly-for 0.1mg/mL 3-hexyl thiophene (P3HT, shown in its structural formula such as Fig. 7 (a)) chloroformic solution drip on Graphene, then with the rotating speed spin coating 30s of 4000r/min, last baking 2min at 120 DEG C, characterizing P3HT by Raman and XPS as shown in Fig. 7 (b) and Fig. 7 (c) and be successfully assembled on Graphene, thickness is 3～5nm.
It is that the antetype device of semiconductor layer high polymer type light excitation material base carries out photoelectric properties sign to titanium dioxide.The current-voltage output relation collection of illustrative plates under etalon optical power as shown in Fig. 8 (a) and the electricity conversion collection of illustrative plates under each monochromatic light wave band as shown in Fig. 8 (c) can be obtained, assemble light in conjunction with such as Fig. 8 (b) and excite the optical absorption characteristics of dyestuff can obtain prepared solaode there is the interior electricity conversion (as Suo Shi Fig. 8 (d)) of about 7%.These show the electricity conversion that solaode prepared by the present embodiment has had.
Embodiment 4, titanium dioxide are semiconductor layer quantum dot is the antetype device of light excitation material base
1, prepared by Ohmic contact electronics collecting layer: with gold for target≤5 × 10 in smooth glass substrate-4Under Pa vacuum condition, carry out the gold of heat evaporation 30nm with the speed of 0.005nm/s；Then with indium metal granule for target≤5 × 10-4Under Pa vacuum condition, carry out the indium metal of heat evaporation 100nm with the speed of 0.004nm/s.Wherein indium is in order to enable and titanium dioxide layer formation Ohmic contact, and gold is in order to protect indium metal to reduce oxidation.
2, prepared by titanium dioxide semiconductor layer: react the titanium dioxide of ion deposition 500nm in oxygen plasma atmosphere with 0.005nm/s with magnetron sputtering with Titanium for target, then carry out chemical polishing and etch 5min at the HF aqueous solution of 30wt%, the oxygen plasma of 30W etches 1min.
3, titanium dioxide surface is transferred graphene to: on Copper Foil, grow monoatomic layer Graphene by CVD, titanium dioxide surface is transferred graphene to for auxiliary layer with PMMA, at 50 DEG C, first toast 5min after transfer up the solvent of Graphene and titanium dioxide surface is toasted dry, then at 120 DEG C, toast contact between 8min guarantee Graphene and titanium dioxide more closely, in the acetone soln of 80 DEG C of heating, finally soak 10min will shift auxiliary layer PMMA removal.
4, PbS quantum optical exciting layer is assembled: with e-beam evaporation with PbS powder for target≤3 × 10-4Under Pa vacuum condition, carrying out the PbS of electron beam evaporation plating 2.1nm with 0.003nm/s, be successfully assembled on Graphene as it is shown in figure 9, characterize PbS by XPS, thickness is 3～5nm.
The antetype device of to be semiconductor layer PbS quantum to titanium dioxide be light excitation material base carries out photoelectric properties sign.The current-voltage output relation collection of illustrative plates under etalon optical power as shown in Figure 10 (a) and the electricity conversion collection of illustrative plates under each monochromatic light wave band as shown in Figure 10 (c) can be obtained, assemble light in conjunction with such as Figure 10 (b) and excite the optical absorption characteristics of dyestuff can obtain prepared solaode there is the interior electricity conversion (as Suo Shi Figure 10 (d)) of about 3%.These show the electricity conversion that solaode prepared by the present embodiment has had.
In sum, the present invention has the full solaode admittedly of brand-new photodetachment mode by the design of selectivity tunneling mechanism, has excellent electricity conversion, the device architecture of simplification, freely various material select.The potential photoelectric conversion device becoming a new generation's practicality and high efficiency of the solaode of this class formation.
Claims (8)
1., based on a preparation method for the solaode of selectivity tunnelling principle, comprise the steps:
(1) wide bandgap semiconductor of surfacing is prepared；
Described wide bandgap semiconductor is titanium dioxide or zinc oxide；
(2) Graphene is transferred on a surface of described wide bandgap semiconductor, then proceedes on described Graphene, assemble light excitation material and obtain light excitation material layer；
(3) in the low work function metal of another surface-assembled of described wide bandgap semiconductor, described solaode is namely obtained.
2. preparation method according to claim 1, it is characterised in that: described wide bandgap semiconductor is titanium dioxide, and it is by following 1)-4) and in any one method prepare:
1) surface of titanium dioxide single crystalline substrate carries out machine glazed finish, then performs etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product；
2) being deposited with titanium through magnetron sputtering in the titanium sheet of machine glazed finish, then anneal in oxygen and titanyl is melted into titanium dioxide, then perform etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product；
3) in oxygen plasma atmosphere, with Titanium for target, it is deposited with titanium dioxide with magnetron sputtering, then performs etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product；
4) under vacuum, with titanium dioxide granule for target, use electron beam evaporation plating titanium dioxide, then perform etching successively to carry out chemical polishing in HF aqueous solution and oxygen plasma, to obtain final product.
3. preparation method according to claim 1, it is characterized in that: described wide bandgap semiconductor is zinc oxide, it is prepared by following method: the surface of Zinc oxide single crystal carries out machine glazed finish, then performs etching to carry out chemical polishing successively in HF aqueous solution and oxygen plasma, to obtain final product.
4. the preparation method according to any one of claim 1-3, it is characterised in that: in step (2), described smooth excitation material is that Z907 contaminates sensitive molecule, contaminates quick Dye-1 molecule, poly-3 hexyl thiophenes or PbS；
Described Z907 contaminates the structural formula such as shown in formula I of sensitive molecule, and the structural formula of described quick Dye-1 molecule is such as shown in formula II,
5. preparation method according to claim 4, it is characterised in that: described smooth excitation material is by following 1)-4) and in any one method assemble:
1) described smooth excitation material is that described Z907 contaminates sensitive molecule, and described Z907 is contaminated sensitive molecule and is assembled on described Graphene by dip coating or spin-coating method；
2) described smooth excitation material is the quick Dye-1 molecule of described dye, and described dye quick Dye-1 molecule is assembled on described Graphene by dip coating；
3) described smooth excitation material is described poly-3-hexyl thiophene, and described poly-3-hexyl thiophene is assembled on described Graphene by spin-coating method；
4) described smooth excitation material is PbS, under vacuum, carries out electron beam evaporation plating with PbS powder for target.
6. preparation method according to claim 5, it is characterised in that: in step (3), described low work function metal is titanium, aluminum, indium or indium gallium alloy.
7. preparation method according to claim 6, it is characterised in that: described low work function metal is by following 1)-4) and in any one method assemble:
1) described low work function metal is titanium, with Titanium for target, in argon plasma atmosphere, carries out assembling titanium through magnetron sputtering；
2) described low work function metal is aluminum, with metallic aluminium for target, in argon plasma atmosphere, carries out assembling aluminum through magnetron sputtering；
3) described low work function metal is indium, with indium metal for target, under vacuum, carries out assembling indium through heat evaporation；
4) described low work function metal is indium gallium alloy, and the indium gallium alloy of liquid drips to the surface of described wide bandgap semiconductor, then flattens with copper sheet.
8. the solaode that prepared by method according to any one of claim 1-7.
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| Colloquium: Andreev reflection and Klein tunneling in graphene;C.W.J.Beenakker;《Reviews of Modern Physics》;20081006;第80卷(第4期);全文 * |
| Transparent, Conductive Graphene Electrodes for Dye-Sensitized Solar Cells;Xuan Wang等;《NANO LETTERS》;20071112;第8卷(第1期);全文 * |
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