CN103680607A - Light-field detecting element - Google Patents
Light-field detecting element Download PDFInfo
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- CN103680607A CN103680607A CN201210320312.1A CN201210320312A CN103680607A CN 103680607 A CN103680607 A CN 103680607A CN 201210320312 A CN201210320312 A CN 201210320312A CN 103680607 A CN103680607 A CN 103680607A
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Abstract
The invention provides a light-field detecting element. The light-field detecting element comprises a semiconductor substrate, an oxidant layer formed on the semiconductor substrate, a metal film layer formed on the oxidant layer, a light blocking layer formed on the metal film layer, a first electrode, a second electrode, a first electrode lead and a second electrode lead, wherein one end of the light blocking layer is provided with a light transmitting hole; the first electrode and the second electrode are respectively arranged at the two ends of the metal film layer; the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode. The light-field detecting element provided by the invention has the advantages that according to the light-induced resistance effect generated by that laser irradiates the metal film layer, the resistance change can be used for showing the two states of a storage unit with light and the storage unit without the light, and the space resolution ratio of the resistance along with the change of the irradiating position of the laser is very high, so that the density of a light storage is increased; simultaneously the light-field detecting element can be used for preparing a light-control rheostat and a light-control diode; the light-field detecting element is simple in structure and is applicable to large-scale industrial production and application.
Description
Technical field
The present invention relates to memory technology field, particularly relate to a kind of optical field detection element.
Background technology
Computing machine is by these five elements of arithmetical unit, storer, controller, input block and output unit.Wherein the effect of storer is storage program and data.The main storage medium of storer has semiconductor circuit, magnetic recording medium, optical storage media etc.Semiconductor medium is mainly used in primary memory and claims again main memory or internal memory.Magnetic recording medium and optical storage media claim again external memory for supplementary storage.Common supplementary storage has hard disk, CD etc.In digital machine, information represents with the form of binary code, so any storer all needs to design a kind of mode, represents 1 in scale-of-two and 0 two states.
The mechanical hard disk of main flow, with magnetic material as storage medium, is used the state of magnet unit on the write head change indicator based on Faradic electricity magnetic induction at present, uses the playback head based on giant magnetoresistance effect to read the information on indicator.Optical storage refers to the method with photoelectric project, by data storage on the medium of optical readable, to carry out the storage of data.The CDs such as the reading memory laser disc that computer is used and Blu-ray Disc are exactly the application that light stores.On CD, have rough pitting, illumination is mapped to above has different reflections, by light field sensor sensing, then is converted into 0,1 digital signal and has just become optical storage.
Also having a kind of storage mode is magneto-optic storage, and it is the combination of magnetic storage and optical storage.Magneto-optic storage is to focus on Magnetooptic recording medium film with a branch of light laser, pyromagnetic writing and erasure information.Utilize the utmost point to carry out reading information to Kerr magnetooptical effect.With a branch of linearly polarized light, be irradiated on the magnet-optical medium of recorded information, utilizing emitted light plane of polarization rotates a certain angle with respect to incident light polarization face.For a magnet-optical medium for writing information, magnetic domain local magnetic moment orientation is different, and the polarization direction of backlight plane of polarization is just different, so just can carry out reading information by measurement reflected light.
From optical storage, be born so far, a lot of scientists are in the storage density of being devoted to the information that improves.
Summary of the invention
The shortcoming of prior art, the object of the present invention is to provide a kind of optical field detection element in view of the above, in order to improve the object of optical memory density.
For achieving the above object and other relevant objects, the invention provides a kind of optical field detection element, comprising: Semiconductor substrate; Be formed at the oxide skin(coating) in described Semiconductor substrate; Be formed on the metal film layer on described oxide skin(coating); Be formed on the light blocking layer on described metal film layer, one end of described light blocking layer is provided with light hole; Be separately positioned on the first electrode and second electrode at described metal film layer two ends; The first contact conductor and the second contact conductor that are connected with the second electrode with described the first electrode respectively.
Alternatively, the thickness of described metal film layer is 1nm ~ 50nm.
Alternatively, the thickness range of described metal film layer is 4.0nm ~ 9.0nm.
Alternatively, described metal film layer comprises single metal or metal alloy.
Alternatively, described single metal is Ti, Co or Cu.
Alternatively, described oxide skin(coating) is oxide semiconductor layer or metal oxide layer.
Alternatively, described oxide semiconductor layer is SiO
2oxide skin(coating) or NiO oxide skin(coating); Described metal oxide layer is TiO
2oxide skin(coating).
Alternatively, the thickness range of described oxide skin(coating) is 0.1nm ~ 138nm.
Alternatively, the thickness range of described oxide skin(coating) is 1.0nm ~ 1.5nm.
Alternatively, the first described electrode and the second electrode adopt gold, silver, aluminium, copper, platinum, Yin Huo Sillim metal material, make a point or a line.
Alternatively, also comprise the light blocking layer being formed on described metal film layer, one end of described light blocking layer is provided with light hole.
The invention provides a kind of application of optical field detection element as above, for the preparation of photodiode.
The present invention also provides the application of another kind of optical field detection element as above, for the preparation of Raysistor.。
As mentioned above, a kind of optical field detection element of the present invention, has following beneficial effect:
1, the photic electricresistance effect that optical field detection element of the present invention produces according to Ear Mucosa Treated by He Ne Laser Irradiation metal film layer, can represent that with the variation of resistance storage unit has light and unglazed two states, the spatial resolution that electrical resistance laser irradiating position changes is very high, thereby smooth optical field detection element of the present invention can significantly improve the density of optical memory.
2, the present invention is simple in structure, can be widely used in the fields such as light-operated resistor, photodiode and super large information-storing device, is applicable to large-scale industrial production application.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of a kind of optical field detection element of the present invention.
Fig. 2 to Fig. 7 is shown as the resistance test procedure chart of Ti metal film layer in a kind of optical field detection element of the present invention.
Fig. 8 is shown as the electrical resistance laser position variation diagram of Ti metal film layer in a kind of optical field detection element of the present invention.
Fig. 9 is shown as a kind of optical field detection element longitudinal electrical resistance of the present invention with laser position variation diagram.
Figure 10 is shown as the electrical resistance laser position variation diagram of Semiconductor substrate in a kind of optical field detection element of the present invention.
Figure 11 is shown as Ti metal film layer in a kind of optical field detection element of the present invention, longitudinally and the resistance comparison diagram of Semiconductor substrate.
Figure 12 is shown as distance between E in distance between Ti metal film layer A in a kind of optical field detection element of the present invention, B and Semiconductor substrate, F and the variation relation figure of resistivity at 2 at 2.
Figure 13 is shown as distance between E in distance between Ti metal film layer A in a kind of optical field detection element of the present invention, B and Semiconductor substrate, F and the variation relation figure of resistivity at 2 at 2.
Figure 14 is shown as the variation relation figure of Ti metallic film layer thickness and resistivity in a kind of optical field detection element of the present invention.
Figure 15 is shown as in a kind of optical field detection element of the present invention electrical resistance laser position variation diagram when Ti metallic film layer thickness is 50nm.
Photic electricresistance effect figure when the thickness that Figure 16 is shown as the oxide skin(coating) of a kind of optical field detection element of the present invention is 138nm.
Figure 17 is shown as a kind of optical field detection element of the present invention and in optical memory, applies schematic diagram.
Element numbers explanation
1 optical field detection element
11 Semiconductor substrate
12 metal film layers
13 oxide skin(coating)s
14 light blocking layers
15 light holes
16 first electrodes
17 second electrodes
18 first contact conductors
19 second contact conductors
2 optical memories
3 illumination
L
1bias voltage is the photic electricresistance effect curve on timing Ti metal film layer
L
2photic electricresistance effect curve when bias voltage is negative on Ti metal film layer
L
3bias voltage is that timing longitudinal electrical resistance is with laser position change curve
L
4when bias voltage is negative, longitudinal electrical resistance is with laser position change curve
L
5bias voltage is the electrical resistance laser position change curve in timing Semiconductor substrate
L
6electrical resistance laser position change curve when bias voltage is negative in Semiconductor substrate
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this instructions.The present invention can also be implemented or be applied by other different embodiment, and the every details in this instructions also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Figure 17.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
The invention provides a kind of optical field detection element, the photic electricresistance effect producing according to Ear Mucosa Treated by He Ne Laser Irradiation metal film layer, can represent that storage unit has light and unglazed two states by resistance variations, the spatial resolution that electrical resistance laser irradiating position changes is very high, thereby smooth optical field detection element of the present invention can significantly improve the density of optical memory.To elaborate principle and the embodiment of a kind of optical field detection element of the present invention below, make those skilled in the art not need creative work can understand a kind of optical field detection element of the present invention.
As shown in Figure 1, the invention provides a kind of optical field detection element, described optical field detection element 1 comprises: Semiconductor substrate 11; Be formed at the oxide skin(coating) 13 in described Semiconductor substrate 11; Be formed on the metal film layer 12 on described oxide skin(coating) 13; Be formed on the light blocking layer 14 on described metal film layer 12, one end of described light blocking layer 14 is provided with light hole 15; Be separately positioned on the first electrode 16 and second electrode 17 at described metal film layer 12 two ends; The first contact conductor 18 and the second contact conductor 19 that are connected with the second electrode 17 with described the first electrode 16 respectively.
Described Semiconductor substrate 11 can be from Si, GaAs, Al
2o
3deng choosing preparation in semiconductor material, in the present embodiment, described Semiconductor substrate 11 adopts the monocrystalline silicon semiconductor of N-shaped, and the thickness of described Semiconductor substrate 11 is 0.1mm～1mm, and the thickness of specifically choosing in the present embodiment described Semiconductor substrate 11 is 0.28mm ~ 0.32mm; Resistivity is at room temperature 50 Ω .cm ~ 80 Ω .cm.Particularly, in the present embodiment, the length and width of described Semiconductor substrate 11 are 20mm * 5mm simultaneously, and thick is 0.3mm.
Described oxide skin(coating) 13 is oxide semiconductor layer or metal oxide layer, and in the present invention, described oxide semiconductor layer is preferably SiO
2oxide skin(coating) or NiO oxide skin(coating), described metal oxide layer is preferably TiO
2oxide skin(coating).The thickness of general described oxide skin(coating) 13 can be chosen for 0.1nm～138nm.Due to the surface coverage of common Semiconductor substrate 11 the natural SiO of one deck
2oxide skin(coating), so in the present embodiment, just specifically selects SiO
2oxide skin(coating), the preferred thickness range of described oxide skin(coating) 13 is 1.0nm ~ 1.5nm, particularly, in the present embodiment, controls SiO
2the thickness of oxide skin(coating) is 1.2nm.
The thickness of general described metal film layer 12 can be 1nm ~ 50nm, and relatively preferably, the thickness range of described metal film layer 12 is 4.0nm ~ 9.0nm.Described metal film layer 12 can be formed by single metal or metal alloy.In the present embodiment, described metal film layer 12 is formed by single metal, and described single metal comprises Ti, Co or Cu, and correspondingly, described metal film layer 12 is Ti metal film layer, Co metal film layer or the Cu metal film layer being formed by above-mentioned single metal.In the present embodiment, described metal film layer 12 is specially Ti metal film layer.
What described Ti metal film layer adopted is high-purity Ti preparation of target materials, the thickness range of described Ti metal film layer is 4.0nm ~ 9.0nm, by the test of the Ti metal film layer to different-thickness, determine in the present embodiment, the thickness of described Ti metal film layer is specifically elected 6.2nm as, because when the thickness of described Ti metal film layer is 6.2nm, Ti/SiO
2/ Si can demonstrate best photic electricresistance effect (will describe in detail) below.
At described Ti metal film layer, be formed on described SiO
2after on oxide skin(coating), at the two ends of described Ti metal film layer, make respectively the first electrode 16 and the second electrode 17, the first described electrode 16 and the second electrode 17 adopt gold, silver, aluminium, copper, platinum, Yin Huo Sillim metal material, make a point or a line.Particularly, in the present embodiment, the indium point that described the first electrode 16 and the second electrode 17 are formed by indium metal material, the size of described indium point all should be less than 1mm.In addition, in forming the process of indium point, when indium point forms, the first electrode 16 is connected with the first contact conductor 18, and when another indium point forms, the second electrode 17 is connected with the second contact conductor 19.
For principle of the present invention and performance are described, make light blocking layer 14 on described metal film layer 12 before, first measure the photic electricresistance effect of metal film layer.
The photic electricresistance effect of measurement on Ti metal film layer, as shown in Figures 2 to 7.In measurement, the thickness of choosing described Ti metal film layer is 6.2nm, and now, described Ti metal film layer has former resistance 1.3M Ω (R
0), choose the position shown in A in the first electrode 16(figure) and the second electrode 17(figure in the position shown in B) between distance be 2.6mm, the power of laser is 3Mw, sharp light wavelength is 632nm.
With voltage table, connect the first contact conductor 18 and the second contact conductor 19, whether can conducting to measure described Ti metal film layer, then, open laser instrument, by laser directly according on described Ti metal film layer.
As shown in Figures 2 to 4, when the bias voltage of measuring is when negative, the voltage of the first electrode 16 is negative (A-), and the voltage of the second electrode 17 is negative (B+).When laser impinges upon B+ position in the second electrode 17(figure) time, the resistance of described Ti metal film layer is with respect to former resistance R
0(shown in Fig. 4) can be increased to 2.2M Ω (R shown in Fig. 2
max), when laser impinges upon A-position in the second electrode 17(figure) time, the resistance of described Ti metal film layer is with respect to former resistance R
0(shown in Fig. 4) can drop to 0.2M Ω (R shown in Fig. 3
min).Resistance change rate is: △=((R
max-R
min)/R
min) * 100%, in this case, the resistance change rate △ in this optical field detection element 1 reaches 1000%, and the former resistance R of the described Ti metal film layer while there is no Ear Mucosa Treated by He Ne Laser Irradiation
0compare, resistance presents polarity, and we are defined as R polar orientation
maxto R
min, the polarity of resistance can be expressed as B to A.
As shown in Figures 5 to 7, when bias voltage is by bearing change timing, the voltage of the first electrode 16 is negative (A+), and the voltage of the second electrode 17 is negative (B-).When laser impinges upon beta-position in the second electrode 17(figure, put) time, the resistance of described Ti metal film layer is with respect to former resistance R
0(shown in Fig. 7) can drop to 0.2M Ω (R shown in Fig. 5
min), when laser impinges upon A+ position in the first electrode 16(figure) time, the resistance of described Ti metal film layer is with respect to former resistance R
0(shown in Fig. 7) can be increased to 2.2M Ω (R shown in Fig. 6
max).Equally, in this case, the resistance change rate in this optical field detection element 1 reaches 1000%, and the former resistance R of the described Ti metal film layer while there is no Ear Mucosa Treated by He Ne Laser Irradiation
0compare, resistance presents polarity, and we are defined as R polar orientation
maxto R
min, the polarity of resistance can be expressed as A to B.
So, we have obtained having the electricresistance effect (A is to B and B to A) of bipolarity characteristic, and this is referred to as photic electricresistance effect.Further, by regulating the position of laser between 16, the first electrode and the second electrode 17, resistance can be at maximal value R
maxwith minimum value R
minbetween change.Show typical diode characteristic, compare with traditional diode, it has an advantage clearly, the conducting direction of diode can by laser control change, it can be used as light-operated diode.
A storage unit of the shape of optical field detection element 1 of the present invention and optical memory is consistent.A storage unit has two states, has light and unglazed.Suppose that optical field detection element 1 adds forward bias, resistance polar orientation R
maxto R
min.If metal film layer 12 surfaces of optical field detection element 1 are all blocked, only stay B point place printing opacity, because B point place printing opacity, so now, resistance is R
min, other position beyond Ear Mucosa Treated by He Ne Laser Irradiation is being located B point is because other position is all unglazed region, and resistance is R
0, light signal is converted into electric signal, this two states just can be used for representing binary zero and 1.
As shown in Figure 8, be shown as the electrical resistance laser position variation diagram of Ti metal film layer in a kind of optical field detection element 1 of the present invention, wherein comprising bias voltage is the photic electricresistance effect curve L on timing Ti metal film layer
1photic electricresistance effect curve L while being negative with bias voltage on Ti metal film layer
2.From Fig. 8, we can it is evident that, the resistance of Ti metal film layer always shows with laser spots position and is linear relation.No matter bias voltage is to bear just, and the spatial resolution of electrical resistance laser spots change in location can be up to 0.77M Ω/mm (being equivalent to 0.77 Ω/nm).Even this means that very little laser displacement also can cause huge resistance variations, utilize this characteristic, many photosensitive electro-optical devices can be devised, such as highly sensitive Raysistor.Meanwhile, very little laser displacement also can cause huge resistance variations also to illustrate that the spatial resolution of electrical resistance laser irradiating position variation is very high, thereby optical field detection element 1 of the present invention can significantly improve the density of optical memory.
In addition, in the present invention, measured respectively longitudinal electrical resistance R
cDresistance R with Semiconductor substrate 11
eFvariation with laser spots position, as shown in Figure 9 and Figure 10, be shown as respectively a kind of optical field detection element 1 longitudinal electrical resistance of the present invention with the electrical resistance laser position variation diagram of laser position variation diagram and Semiconductor substrate 11, wherein the distance of E and F point-to-point transmission is identical with the distance between A and B, be all 2.6mm, corresponding the first electrode 16 of C, corresponding the second electrode 17 of C ', C is the intermediate position points of C ' point and C ' point; D ', D " corresponding with C ', C ' and C respectively with D; 2 of E and F respectively with D ' and D " corresponding.
In Fig. 9, comprising bias voltage is that timing longitudinal electrical resistance is with laser position change curve L
3while being negative with bias voltage, longitudinal electrical resistance is with laser position change curve L
4.From Fig. 9, we can obviously find out, no matter our use is positive bias voltage or negative bias voltage, when laser spots is during away from C point, and longitudinal electrical resistance R
cDalways increase.This means that the longitudinal electrical resistance in this structure does not have photic electricresistance effect.
In Figure 10, comprising bias voltage is the electrical resistance laser position change curve L in timing Semiconductor substrate 11
5electrical resistance laser position change curve L while being negative with bias voltage in Semiconductor substrate 11
6, from Figure 10, we can obviously find out, when laser is when E and F point-to-point transmission move, former resistance in Semiconductor substrate 11 (for 8K Ω) can be increased to maximal value 9.5K Ω, also can be reduced to minimum value 6.5K Ω, this means and in Semiconductor substrate 11, also has photic electricresistance effect.Compare with the photic electricresistance effect of Ti metal film layer, Semiconductor substrate 11 has a very little inelastic region.In addition, the resistance change rate in Semiconductor substrate 11 (△ EF=46%) is much smaller than the resistance change rate of Ti metal film layer (△ AB=1000%).Figure 11 is shown as Ti metal film layer in a kind of optical field detection element 1 of the present invention, longitudinally and the resistance comparison diagram of Semiconductor substrate 11.
As shown in Figure 12 to Figure 14, in order better to obtain photic electricresistance effect, we have also surveyed distance, Ti metal film layer and the impact of laser power on photic electricresistance effect between two electrodes in the distance between the first electrode 16 and the second electrode 17, Semiconductor substrate 11 on Ti metal film layer.
Figure 12 is shown as the distance between E, F 2 points (as shown in figure 10) and the variation relation figure of resistivity in distance between Ti metal film layer A in a kind of optical field detection element 1 of the present invention, B 2 points (as shown in Figure 8) and Semiconductor substrate 11.As shown in figure 12, we very clearly can see, the distance between 2 of AB (or EF) is less, more can obtain a large resistance change rate.
As shown in figure 13, be shown as in a kind of optical field detection element 1 of the present invention on Ti metal film layer the distance between E, F 2 points (as shown in figure 10) and the variation relation figure of resistivity in the distance between A, B 2 points (as shown in Figure 8) and Semiconductor substrate 11.From Figure 13, see, resistance can increase along with the increase of laser power, is then easy to be tending towards saturated.This means that very little laser power just can obtain a photic electricresistance effect clearly.
As shown in figure 14, be shown as the variation relation figure of Ti metallic film layer thickness and resistivity in a kind of optical field detection element 1 of the present invention.From Figure 14, we can see, the photic electricresistance effect of Ti metal film layer and Semiconductor substrate 11 is all very responsive to the thickness of Ti metal film layer.In fact, the thickness at metal film layer 12 can detect photic electricresistance effect in 1nm ~ 50nm.
Photic electricresistance effect figure when the thickness that as shown in figure 15, Figure 15 is shown as Ti metal film layer is 50nm.In theory, metal film layer 12 is also to detect photic electricresistance effect at the thickness that is greater than 50nm, but at metal film layer 12 thickness when excessive, photic electricresistance effect is relatively so unobvious, in according to the present invention, the performance of the thickness of optical field detection element 1 needs and optical field detection element 1 is considered, does not need to do too thick photoresponsive layer (being metal film layer 12).As can be seen from Figure 14,, when the thickness of Ti metal film layer is during away from its optimum thickness 6.2nm, photic electricresistance effect can reduce.This means that a suitable metal thickness is vital for obtaining large photic electricresistance effect.
In addition, the thickness of general described oxide skin(coating) 13 can be chosen for 0.1nm～138nm.In fact, the thickness at oxide skin(coating) 13 can detect photic electricresistance effect in 0.1nm ~ 138nm.Photic electricresistance effect figure when the thickness that as shown in figure 16, Figure 16 is shown as oxide skin(coating) 13 is 138nm.In theory, oxide skin(coating) 13 is also to detect photic electricresistance effect at the thickness that is greater than 138nm, but at oxide skin(coating) 13 thickness when excessive, photic electricresistance effect is relatively so unobvious, in according to the present invention, the performance of the thickness of optical field detection element 1 needs and optical field detection element 1 is considered, does not need to do too thick oxide skin(coating) 13.
In addition, we have also surveyed the impact of optical maser wavelength on photic electricresistance effect, and measurement result is as shown in table 1, and table 1 is the relation between photic electricresistance effect and optical maser wavelength.
Table 1
In table 1, the thickness of choosing described Ti metal film layer is 6.2nm, and the distance of choosing between the first electrode 16 and the second electrode 17 is 2.6mm, and the power of laser is 3Mw.From this table, can find out Ti/SiO
2photic electricresistance effect in/Si structure is not only very remarkable in visible-range, and significantly same in ultraviolet and infrared periphery.Give an example, when optical wavelength is when changing to ultraviolet as seen, the sensitivity of photic electricresistance effect and resistance change rate all can increase.Yet when optical wavelength is when as seen to infrared variation, the sensitivity of photic electricresistance effect and resistance change rate all can reduce.This usable range that all shows photic electricresistance effect is very wide.
Be to choose the Ti metal film layer that metal Ti is made in the present invention, we have also made Co metal film layer (thickness is 6.2nm) and the Cu metal film layer (thickness is 6.2nm) of being made by metal Co and metal Cu simultaneously, and the Ti/SiO observing before
2comparing in/Si structure, photic electricresistance effect is at Co/SiO
2/ Si and Cu/SiO
2in/Si structure, also exist.
As shown in table 2, in table 2, the sharp light wavelength adopting during test is 632nm, and the power of laser is 3Mw, the thickness of choosing described Ti metal film layer, Co metal film layer and Cu metal film layer is all 6.2nm, and the distance of choosing between the first electrode 16 and the second electrode 17 is 2.6mm.
Table 2
From table 2, we can find out, metal can show very strong photic electricresistance effect in metals-oxides-semiconductor structure.
From above, describe known, principle of the present invention is to have applied laser to impinge upon the photic electricresistance effect producing on metal film layer 12, by one end printing opacity of metal film layer 12, other parts are arranged to light tight, when laser impinges upon on metal film layer 12, resistance two the very large values that just can change, according to the two states of these two value representative memory cells: there is light and unglazed.
In the present invention, described metal film layer 12 is provided with light blocking layer 14, and one end of described light blocking layer 14 is provided with light hole 15.Described light blocking layer 14 adopts highly reflective material, such as: zinc sulphide, zinc selenide, zinc telluridse etc., or multilayer high reflectivity film, for example ZnS-MgF2 λ 0/4 film system.The thickness of described light blocking layer 14 can regulate voluntarily according to light field wavelength, barrier material parameter, and the thickness range of common described light blocking layer 14 is 0.01～10 μ m.
Described light hole 15 is positioned at one end (left end and right-hand member all can, near a termination electrode) of described light blocking layer 14, and the shape of described light hole 15 does not limit, and according to concrete needs, can change, can such as conventional circle or rectangle etc.
The concrete numerical values recited of described light hole 15 is relevant to material composition and the length scale of described optical field detection element 1 other each layer, and scope can be chosen but not be defined as 1～100nm conventionally.What take described light hole 15 is shaped as circle as example: the larger luminous flux of radius is larger, but photo-generated carrier diffusion length less (the electric potential gradient between two electrodes is less).So the size of concrete described light hole 15, can specifically determine according to actual conditions.
As shown in figure 17, the equal and opposite in direction of a storage unit in the size of each optical field detection element 1 and optical memory 2, we record light and unglazed two states in an optical memory 2.When detecting element rests on light (illumination 3 as shown in Figure 17) unit and rests on unglazed unit, resistance has very big-difference, can be used for representing 1 in scale-of-two and 0, therefore optical field detection element of the present invention utilizes super large spatial resolution and the spatial sensitivity of this photic electricresistance effect, can realize the storage of super large density information.
In sum, a kind of optical field detection element of the present invention and application thereof, have following beneficial effect:
1, the photic electricresistance effect that optical field detection element of the present invention produces according to Ear Mucosa Treated by He Ne Laser Irradiation metal film layer, can represent that by the variable condition of resistance storage unit has light and unglazed two states, the spatial resolution that electrical resistance laser irradiating position changes is very high, thereby smooth optical field detection element of the present invention can significantly improve the density of optical memory.
2, the present invention is simple in structure, can be widely used in the fields such as light-operated resistor, photodiode and super large information-storing device, is applicable to large-scale industrial production application.
So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (13)
1. an optical field detection element, is characterized in that, comprising:
Semiconductor substrate;
Be formed at the oxide skin(coating) in described Semiconductor substrate;
Be formed on the metal film layer on described oxide skin(coating);
Be separately positioned on the first electrode and second electrode at described metal film layer two ends;
The first contact conductor and the second contact conductor that are connected with the second electrode with described the first electrode respectively.
2. optical field detection element according to claim 1, is characterized in that: the thickness of described metal film layer is 1nm ~ 50nm.
3. optical field detection element according to claim 2, is characterized in that: the thickness range of described metal film layer is 4.0nm ~ 9.0nm.
4. according to the optical field detection element described in claim 1,2 or 3, it is characterized in that: described metal film layer comprises single metal or metal alloy.
5. optical field detection element according to claim 4, is characterized in that: described single metal is Ti, Co or Cu.
6. optical field detection element according to claim 1, is characterized in that: described oxide skin(coating) is oxide semiconductor layer or metal oxide layer.
7. optical field detection element according to claim 6, is characterized in that: described oxide semiconductor layer is SiO
2oxide skin(coating) or NiO oxide skin(coating); Described metal oxide layer is TiO
2oxide skin(coating).
8. according to the optical field detection element described in claim 1,6 or 7, it is characterized in that: the thickness range of described oxide skin(coating) is 0.1nm ~ 138nm.
9. optical field detection element according to claim 8, is characterized in that: the thickness range of described oxide skin(coating) is 1.0nm ~ 1.5nm.
10. optical field detection element according to claim 1, is characterized in that: the first described electrode and the second electrode adopt gold, silver, aluminium, copper, platinum, Yin Huo Sillim metal material, make a point or a line.
11. optical field detection elements according to claim 1, is characterized in that: also comprise the light blocking layer being formed on described metal film layer, one end of described light blocking layer is provided with light hole.
12. 1 kinds according to the application of the optical field detection element described in claim 1 to 11 any one, it is characterized in that, for the preparation of photodiode.
13. 1 kinds according to the application of the optical field detection element described in claim 1 to 11 any one, it is characterized in that, for the preparation of Raysistor.
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|---|---|---|---|
| CN201210320312.1A CN103680607A (en) | 2012-08-31 | 2012-08-31 | Light-field detecting element |
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| CN201210320312.1A CN103680607A (en) | 2012-08-31 | 2012-08-31 | Light-field detecting element |
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| CN104167459A (en) * | 2014-06-11 | 2014-11-26 | 中国石油大学(华东) | Heterojunction having photoinduction position sensitivity |
| CN109616552A (en) * | 2018-11-21 | 2019-04-12 | 温州大学 | Light-operated IMPATT diode of GaN/SiC hetero-junctions lateral type and preparation method thereof |
| CN112083470A (en) * | 2020-09-02 | 2020-12-15 | 重庆中易智芯科技有限责任公司 | Resistance-state sensitive CdZnTe radiation detector and manufacturing method thereof |
| CN112924416A (en) * | 2021-01-26 | 2021-06-08 | 华中科技大学 | Device and method for measuring longitudinal light field distribution of distributed feedback laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167459A (en) * | 2014-06-11 | 2014-11-26 | 中国石油大学(华东) | Heterojunction having photoinduction position sensitivity |
| CN104167459B (en) * | 2014-06-11 | 2015-12-02 | 中国石油大学(华东) | A kind of have heterojunction of photoinduction position sensing and preparation method thereof |
| CN109616552A (en) * | 2018-11-21 | 2019-04-12 | 温州大学 | Light-operated IMPATT diode of GaN/SiC hetero-junctions lateral type and preparation method thereof |
| CN109616552B (en) * | 2018-11-21 | 2020-04-14 | 温州大学 | GaN/SiC heterojunction lateral light-controlled IMPATT diode and preparation method thereof |
| CN112083470A (en) * | 2020-09-02 | 2020-12-15 | 重庆中易智芯科技有限责任公司 | Resistance-state sensitive CdZnTe radiation detector and manufacturing method thereof |
| CN112083470B (en) * | 2020-09-02 | 2023-11-24 | 重庆中易智芯科技有限责任公司 | Resistance state sensitive CdZnTe radiation detector and manufacturing method thereof |
| CN112924416A (en) * | 2021-01-26 | 2021-06-08 | 华中科技大学 | Device and method for measuring longitudinal light field distribution of distributed feedback laser |
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