CN103680408B - AMOLED pixel-driving circuit, driving method and array drive system - Google Patents
AMOLED pixel-driving circuit, driving method and array drive system Download PDFInfo
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Abstract
The present invention provides a kind of AMOLED pixel-driving circuit, driving method and array drive system, and described drive circuit includes: the first transistor, transistor seconds, Organic Light Emitting Diode and driving transistor, the threshold voltage of described driving transistor is adjustable；The grid of described the first transistor connects scan signal, and the first electrode connects data signal, and the second electrode connects the control gate of described driving transistor；The source doping region ground connection of described driving transistor, drain doping region connects the first pole of described Organic Light Emitting Diode；Second pole of described Organic Light Emitting Diode connects external power source；The grid of described transistor seconds connects the second scanning signal, and the first electrode and the second electrode connect the first pole and second pole of described Organic Light Emitting Diode respectively.The present invention adopts a threshold value adjustable driving transistor to instead of traditional electric capacity and PMOS transistor, greatly increases the relative aperture of pixel-driving circuit, thus improve the luminous efficiency of pixel-driving circuit.
Description
Technical field
The present invention relates to the pixel driver technology of OLED display, particularly relate to a kind of AMOLED pixel-driving circuit, driving method and array drive system.
Background technology
Active matrix organic light-emitting diode (AMOLED), compared to traditional passive drive Organic Light Emitting Diode (PMOLED), having quick response time, contrast is high, the advantages such as visible angle is big, have become the contenders in Display Technique field of future generation in recent years.
Light emitting pixel structure most basic for AMOLED is 2T1C structure, and it is made up of switch transistors pipe T1, driving transistor T2, electric capacity C1 and Organic Light Emitting Diode D1, as shown in Figure 1.The grid of described switch transistors pipe T1 connects scanning signal Vscan, and drain electrode connects data signal Vdata, and source electrode connects first pole of grid and the described electric capacity C1 driving transistor T2；The source electrode of described driving transistor T2 connects second pole of described electric capacity C1 and is connected with external power source VDD, and drain electrode connects first pole of described Organic Light Emitting Diode D1, the second pole ground connection of described Organic Light Emitting Diode D1.This structure has maximum relative aperture, and namely in sub-pixel, the ratio of light-emitting area and pixel entire area is maximum, so can so that the luminous efficiency of pixel is the highest.
In the pixel of above-mentioned 2T1C structure, the luminosity of pixel is determined by outside digital signal, after digital analog converter, it is input on data signal Vdata by the form of voltage, when opening switch transistors pipe T1, signal is stored on electric capacity C1, so drives transistor T2 to have fixing gate source voltage when pixel light emission, so flowing through driving transistor T2 and Organic Light Emitting Diode electric current is also just invariable, the luminous intensity of Organic Light Emitting Diode is maintained.Thus pixel can launch the light of different brightness according to different data signal Vdata.For the pixel of above-mentioned 2T1C structure, it drives transistor T2 to be generally adopted PMOS transistor, and the data signal Vdata therefore inputted is more low, and the electric current flowing through Organic Light Emitting Diode D1 is more big, and brightness is more big.
In general, having the index of a relative aperture in AMOLED pixel, it is defined as in pixel light-emitting area than the area of upper pixel, is commonly used to characterize the luminous efficiency of display.And in one pixel, owing to needing to consider the drain conditions of electric capacity, general electric capacity C1 to account for a big chunk area of pixel, usually drive three times of transistor T2, and the area of switch transistors pipe T1 is minimum, therefore whether there is electric capacity in AMOLED pixel can become the key factor of restriction pixel light emission efficiency.Owing to the capacity area of tradition 2T1C dot structure is about 3 times that drive transistor T2 area, therefore, the relative aperture of tradition 2T1C dot structure is:
Wherein, ADFor the area of Organic Light Emitting Diode, AT1For the area of switch transistors pipe, AT2For driving the area of transistor, AC1Area for electric capacity, it is seen then that the relative aperture of tradition 2T1C pixel-driving circuit is less, has a strong impact on the raising of luminous efficiency.
As it has been described above, the Novel pixel structure how realizing a kind of electric capacity that can eliminate in AMOLED pixel has become one of emphasis of current research.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of AMOLED pixel-driving circuit, drive circuit and driving method, the problems such as its relative aperture is little, and luminous efficiency is low are made for the existence solved in prior art in AMOLED drive circuit due to electric capacity.
For achieving the above object and other relevant purposes, the present invention provides an AMOLED pixel-driving circuit, described pixel-driving circuit includes: the first transistor, transistor seconds, Organic Light Emitting Diode and driving transistor, described driving transistor includes control gate and half floating boom, and its threshold voltage is adjustable；The grid of described the first transistor connects scan signal, and the first electrode connects data signal, and the second electrode connects the control gate of described driving transistor；The source ground of described driving transistor, drain electrode connects the first pole of described Organic Light Emitting Diode；Second pole of described Organic Light Emitting Diode connects external power source；The grid of described transistor seconds connects the second scanning signal, and the first electrode and the second electrode connect the first pole and second pole of described Organic Light Emitting Diode respectively.
A kind of preferred version as the AMOLED pixel-driving circuit of the present invention, described driving transistor includes control gate, half floating boom, drain doping region and source doping region, wherein: described half floating boom is with the described driving transistor channel region of covering that gate dielectric layer is interval and surface, part drain doping region, and described half floating gate portion extends to surface, described drain doping region and contacts；Described drain doping region also includes a diffusion region being positioned at below described half floating boom and contacting, and one and spaced drain contact region, this diffusion region；The doping type of described half floating boom and described diffusion region is contrary with the doping type of drain doping region, source doping region and drain contact region, and described half floating boom and described diffusion region form a pn-junction diode with drain doping region；Described control gate is covered in the surface of described half floating boom, sidewall and surface, part drain doping region with what gate dielectric layer was interval, on described control gate during making alive, forms a tunnel-through diode between described drain contact region and half floating boom.
Further, by the described driving transistor drain quantity of electric charge that half floating boom described in added Control of Voltage stores with on control gate, the threshold voltage to realize described driving transistor is adjustable.
Further, the threshold voltage of described driving transistor is adjusted by procedure below:
Charging process: the control gate of described driving transistor adds negative voltage, and drain electrode adds positive voltage, and electric charge enters half floating boom due to tunneling effect, makes the threshold voltage of described driving transistor reduce；
Discharge process: the control gate institute making alive of described driving transistor is more than described drain electrode institute making alive, described pn-junction diode positively biased, and the electric charge in described half floating boom is discharged by described pn-junction diode, the threshold voltage of described driving transistor improves.
It is any one in polycrystalline SiTFT, amorphous silicon film transistor, Zinc oxide based film transistor and OTFT as a kind of preferred version of the AMOLED pixel-driving circuit of the present invention, described the first transistor and transistor seconds.
The present invention also provides for the driving method of a kind of AMOLED pixel-driving circuit as described in above-mentioned any one scheme, including:
Programming phases: described the first transistor and transistor seconds conducting, the threshold voltage of described driving transistor is programmed by described data signal；
Glow phase: described the first transistor turns on, transistor seconds turns off, and described data signal inputs the first voltage V1, it may be assumed that the control gate of described driving transistor inputs the first voltage V1Make described organic light-emitting diode.
As a kind of preferred version of driving method of the AMOLED pixel-driving circuit of the present invention, also include before described programming phases:
Initial phase: the first transistor and transistor seconds conducting, described data signal inputs the second voltage V1, it may be assumed that the control gate of described driving transistor inputs the second voltage V2, external power source input tertiary voltage V3, and V3<V2, make the pn-junction diode positively biased in described driving transistor, to empty the electric charge that described driving transistor half floating boom stores.
As a kind of preferred version of driving method of the AMOLED pixel-driving circuit of the present invention, in programming phases, the threshold voltage of described driving transistor is changed into:
Vth=Vth0+ΔVth
V in formulathThreshold voltage after programming for described driving transistor, Vth0Initial threshold voltage during electric charge, Δ V is emptied for this driving transistor half floating boomthVariable quantity after programming for this drive transistor threshold voltage；
In glow phase, the electric current that described Organic Light Emitting Diode flows through is:
In formula, I flows through Organic Light Emitting Diode and drives the electric current of transistor, and μ is carrier mobility, CoxFor unit area gate oxide capacitance, W is for driving transistor grid width, and L is for driving transistor gate long.
A kind of preferred version of driving method as the AMOLED pixel-driving circuit of the present invention, in programming phases, the control gate of described driving transistor adds negative voltage, and drain electrode adds positive voltage, and electric charge makes the threshold voltage of described driving transistor reduce owing to tunneling effect enters half floating boom.
The present invention also provides for a kind of pixel array drive system, including:
Data signal line driving circuit, is used for producing data signal；
Scanning circuit, is used for producing scan signal and the second scanning signal；
Pel array, formed by multiple AMOLED pixel-driving circuits as described in above-mentioned any one scheme are arranged in arrays, wherein, the plurality of pixel-driving circuit shares same external power source and ground wire, pixel-driving circuit in each row shares described scan signal and the second scanning signal, the pixel-driving circuit shared data signal in each row.
As mentioned above, the present invention provides a kind of AMOLED pixel-driving circuit, driving method and array drive system, described pixel-driving circuit includes: the first transistor, transistor seconds, Organic Light Emitting Diode and driving transistor, the threshold voltage of described driving transistor is adjustable；The grid of described the first transistor connects scan signal, and the first electrode connects data signal, and the second electrode connects the control gate of described driving transistor；The source doping region ground connection of described driving transistor, drain doping region connects the first pole of described Organic Light Emitting Diode；Second pole of described Organic Light Emitting Diode connects external power source；The grid of described transistor seconds connects the second scanning signal, and the first electrode and the second electrode connect the first pole and second pole of described Organic Light Emitting Diode respectively.The present invention adopts a threshold value adjustable driving transistor to instead of traditional electric capacity and PMOS transistor, greatly increases the relative aperture of pixel-driving circuit, thus greatly increasing the luminous efficiency of pixel-driving circuit.Driving method of the present invention is simple, and luminous efficiency is high, can be widely applied to the fields such as flat pannel display.
Accompanying drawing explanation
Fig. 1 is shown as the electrical block diagram of 2T1C dot structure of the prior art.
Fig. 2 is shown as the electrical block diagram of the AMOLED pixel-driving circuit of the present invention.
Fig. 3 is shown as the structural representation driving transistor that the AMOLED pixel-driving circuit of the present invention adopts.
Fig. 4 is shown as the schematic equivalent circuit driving transistor that the AMOLED pixel-driving circuit of the present invention adopts.
Fig. 5 is shown as the electrical block diagram of the pixel array drive system of the present invention.
Fig. 6～Fig. 7 is shown as the driving method sequential configuration schematic diagram of the pixel array drive system of the present invention.
Element numbers explanation
Vsc1 scan signal
Vsc2 second scans signal
Vd data signal
T1 the first transistor
T2 transistor seconds
T3 drives transistor
D1 Organic Light Emitting Diode
101 Semiconductor substrate
102 source doping region
103 drain doping region
104 drain contact region
105 diffusion regions
106 gate dielectric layers
107 half floating booms
108 control gates
109 tunnel-through diodes
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art the content disclosed by this specification can understand other advantages and effect of the present invention easily.The present invention can also be carried out by additionally different detailed description of the invention or apply, and the every details in this specification based on different viewpoints and application, can also carry out various modification or change under the spirit without departing from the present invention.
Refer to Fig. 2～Fig. 7.It should be noted that, the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way, then assembly that in graphic, only display is relevant with the present invention but not component count when implementing according to reality, shape and size drafting, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is likely to increasingly complex.
Embodiment 1
As shown in Figure 2 to 4, the present embodiment provides an AMOLED pixel-driving circuit, and described pixel-driving circuit includes:
The first transistor T1, transistor seconds T2, Organic Light Emitting Diode D1 and driving transistor T3, described driving transistor T3 includes control gate and half floating boom, and its threshold voltage is adjustable；
The grid of described the first transistor T1 connects scan signal Vsc1, and the first electrode connects data signal Vd, and the second electrode connects the control gate of described driving transistor T3；The source doping region ground connection of described driving transistor T3, drain doping region connects first pole of described Organic Light Emitting Diode D1；Second pole of described Organic Light Emitting Diode D1 connects external power source ELVDD；The grid of described transistor seconds T2 connects the second scanning signal Vsc2, and the first electrode and the second electrode connect the first pole and second pole of described Organic Light Emitting Diode D1 respectively.
It should be noted that, in the present embodiment, described the first transistor T1 and transistor seconds T2 is N-type transistor, certainly, in other embodiments, described the first transistor T1 and transistor seconds T2 can also be P-type transistor, it is possible to selects suitable electrode connection mode according to the doping type of these two transistors, does not limit the scope of application of the present invention.
Specifically, first electrode of described the first transistor T1 is drain electrode, second electrode is source electrode, first electrode of described transistor seconds T2 be drain electrode and be connected with the negative electrode of described Organic Light Emitting Diode D1, second extremely source electrode and while be connected with anode and the external power source of described Organic Light Emitting Diode D1.It should be noted that the first transistor T1, transistor seconds T2 are switching tube, its first electrode, the second electrode are interchangeable, namely as alternative embodiment, first electrode of the first transistor T1 and transistor seconds T2 is source electrode, and the second electrode is drain electrode, has no effect on the implementation result of the present embodiment.
As it is shown on figure 3, in the present embodiment, described driving transistor includes Semiconductor substrate 101, control gate 108, half floating boom 107, drain doping region 103 and source doping region 102, wherein:
Described half floating boom 107 is covered in described driving transistor channel region and surface, part drain doping region 103 with what gate dielectric layer 106 was interval, and described half floating boom 107 extends partially into above described drain doping region 103 and contacts；
Described drain doping region 103 also includes a diffusion region 105 being positioned at below described half floating boom 107 and contacting, and one and spaced drain contact region 104, this diffusion region 105；
The doping type of described half floating boom 107 and described diffusion region 105 is contrary with the doping type of drain doping region 103, source doping region 102 and drain contact region 104, and described half floating boom 107 and described diffusion region 105 form a pn-junction diode with drain doping region 103；
Described control gate 108 is covered in the surface of described half floating boom 107, sidewall and surface, part drain doping region 103 with what gate dielectric layer 106 was interval, when described control gate 108 is plus voltage, between described drain contact region 104 and half floating boom, form a tunnel-through diode 109.
In order to the operation principle that drive transistor T3 that the present invention adopt is better described, half floating boom principle of adjustment and control to transistor threshold voltage driving transistor T3 of the present invention is described with common MOS transistor for comparison other below.
The electric conductivity of common MOS transistor raceway groove by gate voltage regulate and control, when grid voltage exceedes threshold voltage, the semiconductor surface under grid will transoid (n-type semiconductor becomes p-type semiconductor or contrary), generate conducting charge.Gate voltage is more big, and the conducting charge quantity of the accumulation in raceway groove is more many.
Fig. 3 is the structural representation driving transistor T3, transistor T3 is driven mainly to include Semiconductor substrate 101, control gate 108, half floating boom 107, drain doping region 103 and source doping region 102, wherein, half floating boom 107 of p-type doping, pn-junction diode is formed between diffusion region 105 and the drain doping region 103 of n-type doping of p-type doping, described control gate 108 is covered in the surface of described half floating boom 107, sidewall and surface, part drain doping region 103, namely the drain doping region between described diffusion region 105 and drain contact region 104 is covered, when described control gate 108 applies a negative voltage, the band curvature in region between described diffusion region 105 and drain contact region 104 can be caused, form a tunnel-through diode 109.It addition, drive transistor T3 to be considered as inserting an electrode in the gate capacitance medium of normal transistor, as shown in Figure 4, thus original gate capacitance is divided into the series connection of two gate capacitance C1 and C2.The threshold voltage driving transistor, the electric conductivity of regulation and control raceway groove can be changed by injecting electric charge on half floating boom 107.Transistor T3 is driven to regulate and control the principle of threshold voltage it is to be understood that the electric charge injected on half floating boom 107 can drive transistor channel side to induce channel charge by the gate capacitance C2 between half floating boom 107 and transistor channel, positive charge on half floating boom 107 is more many, in raceway groove, the negative charge of sensing is also more many, and the electric conductivity of N-type channel is more strong.This equivalent is to control gate 108, compared with before half floating boom 107 charging, 108 need of control gate add less gate voltage just can induce the channel charge of equivalent in channels, reaches identical conductive effect, drives the threshold voltage of transistor T3 just to reduce so in form.
Visible, for the driving transistor T3 in the present embodiment, by described drain doping region 103 quantity of electric charge that half floating boom 107 described in added Control of Voltage stores with on described control gate 108, the threshold voltage that just can realize described driving transistor T3 is adjustable.
Further, the threshold voltage of described driving transistor T3 is adjusted by procedure below:
Charging process: the control gate 108 of described driving transistor T3 adds negative voltage, and drain electrode 103 adds positive voltage, and electric charge enters half floating boom 107 due to tunneling effect, makes the threshold voltage of described driving transistor T3 reduce；
Discharge process: 108 making alives of control gate of described driving transistor T3 are more than 103 making alives of described drain electrode, described tunnel-through diode positively biased, electric charge in described half floating boom 107 is discharged by described pn-junction diode, and the threshold voltage of described driving transistor T3 improves.
Exemplarily, described the first transistor T1 and transistor seconds T2 is any one in polycrystalline SiTFT, amorphous silicon film transistor, Zinc oxide based film transistor and OTFT.
The AMOLED pixel-driving circuit of the present invention has big advantage compared to tradition 2T1C pixel-driving circuit, and the relative aperture of the 3T type AMOLED pixel-driving circuit of the present invention is:
Wherein, the area of Organic Light Emitting Diode D1 is AD, the area of the first transistor T1 and transistor seconds T2 is AT1, drive transistor T3 area be AT2, it is evident that the relative aperture of the 3T type AMOLED pixel-driving circuit of the present invention is bigger than traditional 2T1C pixel-driving circuit, and luminous efficiency is higher.
The present embodiment also provides for the driving method of a kind of AMOLED pixel-driving circuit, is still N-type transistor for the first transistor T1, transistor seconds T2, and this driving method includes:
Programming phases: scan signal Vsc1 and second scanning signal Vsc2 input high level, described the first transistor T1 and transistor seconds T2 conducting, the threshold voltage of described driving transistor T3 is programmed by described data signal Vd, after programming phases, the threshold voltage of described driving transistor T3 is changed into:
Vth=Vth0+ΔVth
V in formulathThreshold voltage after programming for described driving transistor T3, Vth0Initial threshold voltage during electric charge, Δ V is emptied for this driving transistor T3 half floating boom 107thVariable quantity after programming for this driving transistor T3 threshold voltage；
Glow phase: scan signal Vsc1 input high level makes the first transistor T1 turn on, the second scanning signal Vsc2 input low level makes transistor seconds T2 turn off, and now, data signal Vd inputs the first voltage V1, it may be assumed that the control gate 108 of described driving transistor T3 inputs the first voltage V1, make described Organic Light Emitting Diode D1 luminous, in glow phase, the electric current that described Organic Light Emitting Diode D1 flows through is:
In formula, I flows through Organic Light Emitting Diode and drives the electric current of transistor, and μ is carrier mobility, CoxFor unit area gate oxide capacitance, W is for driving transistor grid width, and L is for driving transistor gate long.
Specifically, in programming phases, the control gate 108 of described driving transistor T3 adds negative voltage, and drain electrode 103 adds positive voltage, and electric charge makes the threshold voltage of described driving transistor T3 reduce owing to tunneling effect enters half floating boom 107.It should be noted that programming phases data signal Vd is relevant to the luminosity needed for respective pixel, choosing of the concrete magnitude of voltage of data signal Vd is corresponding with shade of gray, specifically chooses and computational methods are well known to those skilled in the art, and therefore not to repeat here.
Additionally, in order to increase the precision of programming phases further, initial phase is also add before described programming phases, in initial phase, scan signal Vsc1 and second scanning signal Vsc2 input high level makes the first transistor T1 and transistor seconds T2 conducting, and data signal Vd inputs the second voltage V2, it may be assumed that the control gate 108 of described driving transistor T3 inputs the second voltage V2, external power source ELVDD inputs tertiary voltage V3, and V3<V2, make the pn-junction diode positively biased in described driving transistor T3, to empty the electric charge that described driving transistor T3 half floating boom 107 stores.Before programming phases, increase initial phase, it is possible to control the threshold voltage of described driving transistor T3 more accurately, increase the precision of programming phases.In order to simplify sequential configuration, in the present embodiment, described second voltage V2With described first voltage V1Equal.
Embodiment 2
As it is shown in figure 5, the present embodiment provides the drive circuit of a kind of AMOLED pixel-driving circuit, including:
Data signal line driving circuit, is used for producing data signal Vd；
Scanning circuit, is used for producing scan signal Vsc1 and second scanning signal Vsc2；
Pel array, formed by multiple AMOLED pixel-driving circuits are arranged in arrays, the concrete structure of described AMOLED pixel-driving circuit is as described in Example 1, wherein, the plurality of pixel-driving circuit shares same external power source and ground wire, pixel-driving circuit in each row shares described scan signal Vsc1 and second scanning signal Vsc2, the pixel-driving circuit shared data signal Vd in each row.
As shown in Figure 6, the present embodiment also provides for the driving method of the drive circuit of a kind of AMOLED pixel-driving circuit, is still N-type transistor for the first transistor T1, transistor seconds T2, and described driving method includes:
Programming phases: scan signal Vsc1 and the second scanning signal Vsc2 input high level in corresponding row makes the first transistor T1 and transistor seconds T2 of corresponding row turn on, the threshold voltage driving transistor T3 of this row pixel-driving circuit is programmed by described data signal Vd successively, after programming terminates, each threshold voltage driving transistor T3 is changed into:
Vth(i,j)=Vth0+ΔVth(i,j)
V in formulath(i,j)It is the threshold voltage after the driving transistor T3 programming of the pixel-driving circuit that the i-th row jth arranges, Vth0Initial threshold voltage during electric charge, Δ V is emptied for this driving transistor T3 half floating boom 107thVariable quantity after programming for this driving transistor T3 threshold voltage；
Glow phase: the scan signal Vsc1 input high level of all pixel-driving circuits makes the first transistor turn on, the second scanning signal Vsc2 input low level makes transistor seconds turn off, and data signal Vd inputs the first voltage V1, it may be assumed that drive the control gate 108 of transistor T3 to input the first voltage V1, the Organic Light Emitting Diode D1 of different pixels drive circuit (i, electric current j) flow through is:
I in formula(I,j)For flowing through the Organic Light Emitting Diode of correspondence and driving the electric current of transistor, μ is carrier mobility, CoxFor unit area gate oxide capacitance, W is for driving transistor grid width, and L is for driving transistor gate long.
Additionally, in order to increase the precision of programming phases further, initial phase is also add before described programming phases, as shown in Figure 7, in initial phase, the scan signal Vsc1 of all pixel-driving circuits and second scanning signal Vsc2 input high level, the first transistor T1 and transistor seconds T2 conducting, data signal Vd inputs the second voltage V2, it may be assumed that drive the control gate 108 of transistor T3 to input the second voltage V2, external power source input tertiary voltage V3, and V3<V2, make each pixel-driving circuit drive the pn-junction diode positively biased in transistor T3, to empty the electric charge that each driving transistor T3 half floating boom 107 stores.Before programming phases, increase initial phase, it is possible to control the threshold voltage of described driving transistor T3 more accurately, increase the precision of programming phases.In order to simplify sequential configuration, in the present embodiment, described second voltage V2With described first voltage V1Equal.
As mentioned above, the present invention provides an AMOLED pixel-driving circuit, driving method and array drive system, described pixel-driving circuit includes: the first transistor, transistor seconds, Organic Light Emitting Diode and driving transistor, the threshold voltage of described driving transistor is adjustable；The grid of described the first transistor connects scan signal, and the first electrode connects data signal, and the second electrode connects the control gate of described driving transistor；The source doping region ground connection of described driving transistor, drain doping region connects the first pole of described Organic Light Emitting Diode；Second pole of described Organic Light Emitting Diode connects external power source；The grid of described transistor seconds connects the second scanning signal, and the first electrode and the second electrode connect the first pole and second pole of described Organic Light Emitting Diode respectively.The present invention adopts a threshold value adjustable driving transistor to instead of traditional electric capacity and PMOS transistor, greatly increases the relative aperture of pixel-driving circuit, thus greatly increasing the luminous efficiency of pixel-driving circuit.Driving method of the present invention is simple, and luminous efficiency is high, can be widely applied to the fields such as flat pannel display.So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment is illustrative principles of the invention and effect thereof only, not for the restriction present invention.Above-described embodiment all under the spirit and category of the present invention, can be modified or change by any those skilled in the art.Therefore, art has usually intellectual such as modifying without departing from all equivalences completed under disclosed spirit and technological thought or change, must be contained by the claim of the present invention.
Claims (8)
1. an AMOLED pixel-driving circuit, it is characterised in that described pixel-driving circuit includes:
The first transistor, transistor seconds, Organic Light Emitting Diode and driving transistor, the threshold voltage of described driving transistor is adjustable, described driving transistor includes control gate, half floating boom, drain doping region and source doping region, wherein: described half floating boom is with the described driving transistor channel region of covering that gate dielectric layer is interval and surface, part drain doping region, and described half floating gate portion extends to surface, described drain doping region and contacts；Described drain doping region also includes a diffusion region being positioned at below described half floating boom and contacting, and one and spaced drain contact region, this diffusion region；The doping type of described half floating boom and described diffusion region is contrary with the doping type of drain doping region, source doping region and drain contact region, and described half floating boom and described diffusion region form a pn-junction diode with drain doping region；Described control gate is covered in the surface of described half floating boom, sidewall and surface, part drain doping region with what gate dielectric layer was interval, on described control gate during making alive, a tunnel-through diode is formed between described drain contact region and half floating boom, the threshold voltage of described driving transistor is adjusted by procedure below: charging process: the control gate of described driving transistor adds negative voltage, drain electrode adds positive voltage, electric charge enters half floating boom due to tunneling effect, makes the threshold voltage of described driving transistor reduce；Discharge process: the control gate institute making alive of described driving transistor is more than described drain electrode institute making alive, described pn-junction diode positively biased, and the electric charge in described half floating boom is discharged by described pn-junction diode, the threshold voltage of described driving transistor improves；
The grid of described the first transistor connects scan signal, and the first electrode connects data signal, and the second electrode connects the control gate of described driving transistor；The source ground of described driving transistor, drain electrode connects the first pole of described Organic Light Emitting Diode；Second pole of described Organic Light Emitting Diode connects external power source；The grid of described transistor seconds connects the second scanning signal, and the first electrode and the second electrode connect the first pole and second pole of described Organic Light Emitting Diode respectively.
2. AMOLED pixel-driving circuit according to claim 1, it is characterised in that: by the described driving transistor drain quantity of electric charge that half floating boom described in added Control of Voltage stores with on control gate, the threshold voltage to realize described driving transistor is adjustable.
3. AMOLED pixel-driving circuit according to claim 1, it is characterised in that: described the first transistor and transistor seconds are any one in polycrystalline SiTFT, amorphous silicon film transistor, Zinc oxide based film transistor and OTFT.
4. the driving method of the AMOLED pixel-driving circuit as described in claims 1 to 3 any one, it is characterised in that including:
Programming phases: described the first transistor and transistor seconds conducting, the threshold voltage of described driving transistor is programmed by described data signal；
Glow phase: described the first transistor turns on, transistor seconds turns off, and described data signal inputs the first voltage V1, make described organic light-emitting diode.
5. the driving method of AMOLED pixel-driving circuit according to claim 4, it is characterised in that: also include before described programming phases:
Initial phase: the first transistor and transistor seconds conducting, described data signal inputs the second voltage V2, external power source input tertiary voltage V3, and V3<V2, make the pn-junction diode positively biased in described driving transistor, to empty the electric charge that described driving transistor half floating boom stores.
6. the driving method of AMOLED pixel-driving circuit according to claim 5, it is characterised in that:
In programming phases, the threshold voltage of described driving transistor is changed into:
Vth=Vth0+ΔVth
V in formulathThreshold voltage after programming for described driving transistor, Vth0Initial threshold voltage during electric charge, Δ V is emptied for this driving transistor half floating boomthVariable quantity after programming for this drive transistor threshold voltage；
In glow phase, the electric current that described Organic Light Emitting Diode flows through is:
In formula, I flows through Organic Light Emitting Diode and drives the electric current of transistor, and μ is carrier mobility, CoxFor unit area gate oxide capacitance, W is for driving transistor grid width, and L is for driving transistor gate long.
7. the driving method of the AMOLED pixel-driving circuit according to claim 4 or 5, it is characterized in that: in programming phases, the control gate of described driving transistor adds negative voltage, and drain electrode adds positive voltage, and electric charge makes the threshold voltage of described driving transistor reduce owing to tunneling effect enters half floating boom.
8. a pixel array drive system, it is characterised in that including:
Data signal line driving circuit, is used for producing data signal；
Scanning circuit, is used for producing scan signal and the second scanning signal；
Pel array, formed by multiple AMOLED pixel-driving circuits as described in claims 1 to 3 any one are arranged in arrays, wherein, the plurality of pixel-driving circuit shares same external power source and ground wire, pixel-driving circuit in each row shares described scan signal and the second scanning signal, the pixel-driving circuit shared data signal in each row.
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| CN201310705774.XA CN103680408B (en) | 2013-12-19 | 2013-12-19 | AMOLED pixel-driving circuit, driving method and array drive system |
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| CN201310705774.XA CN103680408B (en) | 2013-12-19 | 2013-12-19 | AMOLED pixel-driving circuit, driving method and array drive system |
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| CN101986378A (en) * | 2010-11-09 | 2011-03-16 | 华南理工大学 | Pixel driving circuit for active organic light-emitting diode (OLED) display and driving method thereof |
| CN102682704A (en) * | 2012-05-31 | 2012-09-19 | 广州新视界光电科技有限公司 | Pixel driving circuit for active organic electroluminescent display and driving method therefor |
| CN103247626A (en) * | 2013-05-02 | 2013-08-14 | 复旦大学 | Semi-floating gate device and manufacturing method thereof |
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| CN101986378A (en) * | 2010-11-09 | 2011-03-16 | 华南理工大学 | Pixel driving circuit for active organic light-emitting diode (OLED) display and driving method thereof |
| CN102682704A (en) * | 2012-05-31 | 2012-09-19 | 广州新视界光电科技有限公司 | Pixel driving circuit for active organic electroluminescent display and driving method therefor |
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