Summary of the invention
In view of this, the invention reside in and propose a kind of display device, driving transistors in described display device makes four end element into, makes driving transistors according to the size of bucking voltage with the numerical value of modulation critical voltage, can adjust the drive current of output by this to change the brightness of light emitting diode.
The embodiment of the present invention provides a kind of display device, and described display device has light emitting diode and driver module.Described driver module is in order to drive light emitting diode, and driver module comprises the first on-off circuit, second switch circuit and driving transistors.Gray scale voltage is optionally write the first electric capacity by the first on-off circuit, and bucking voltage is optionally write the second electric capacity by second switch circuit.Driving transistors couples light emitting diode, the first electric capacity and the second electric capacity respectively, and driving transistors is controlled by gray scale voltage and bucking voltage, and the drive current of light emitting diode is exported in adjustment according to this.Wherein, grid and the source voltage of gray scale voltage adjustment driving transistors are poor, and the critical voltage of bucking voltage adjustment driving transistors.
In one embodiment of the invention, when the brightness of light emitting diode is lower than the first threshold value, bucking voltage reduces the critical voltage of driving transistors, increase drive current according to this, and when the brightness of light emitting diode is higher than the second threshold value, bucking voltage improves the critical voltage of driving transistors, reduces drive current according to this.At this, described many group pixel groups with image acquiring device shooting picture, and judge in the picture photographed in image acquiring device via treating apparatus, whether the brightness of the light emitting diode in each group pixel groups is lower than the first threshold value or higher than the second threshold value.In addition, first on-off circuit and second switch circuit are switching transistor, second switch circuit couples offset data line, the bucking voltage that offset data line exports in order to transmit compensatory control module, and compensatory control module is according to the judged result adjustment bucking voltage for the treatment of apparatus.Wherein, the first on-off circuit couples luma data line, the gray scale voltage that luma data line exports in order to transmit GTG control module, and the first on-off circuit and second switch circuit are controlled by same scan line and simultaneously conducting or cut-off.
In another embodiment of the present invention, first on-off circuit and second switch circuit are switching transistor, first on-off circuit and second switch circuit couple same data line, described data line couples GTG control module and compensatory control module respectively, and described data line timesharing ground transmits gray scale voltage or bucking voltage.Wherein, first on-off circuit and second switch circuit are controlled by the first sweep trace and the second sweep trace respectively, when the first sweep trace controls the first on-off circuit conducting, the gray scale voltage that data line transfer GTG control module exports, when the second sweep trace controls second switch circuit turn-on, the bucking voltage that data line transfer compensatory control module exports.
The invention reside in the light-dimming method proposing a kind of display device, the brightness of display frame can be judged, modulate the numerical value of the critical voltage of driving transistors adaptively, adjust the drive current of driving transistors output by this to change the brightness of light emitting diode.
The embodiment of the present invention provides a kind of light-dimming method of display device, described display device has multiple pixel groups, each group pixel groups has light emitting diode and driver module, driver module has the first on-off circuit, second switch circuit and driving transistors, and driving transistors is controlled by gray scale voltage and bucking voltage, the drive current of light emitting diode is exported in adjustment according to this.Described method comprises the following steps: to judge that whether the brightness of light emitting diode is lower than the first threshold value or higher than the second threshold value; When the brightness of light emitting diode is lower than the first threshold value, adjustment bucking voltage, to reduce the critical voltage of driving transistors, increases drive current according to this; When the brightness of light emitting diode is higher than the second threshold value, adjustment bucking voltage, to improve the critical voltage of driving transistors, reduces drive current according to this.
In sum, the display device that the embodiment of the present invention provides and light-dimming method thereof, the bucking voltage exporting to driving transistors can be adjusted according to the brightness of display frame, make driving transistors according to the size of bucking voltage to modulate the numerical value of critical voltage, the drive current of driving transistors output can be adjusted by this to change the brightness of light emitting diode.Thus, the display frame of described display device can reduce or avoid the problem of brightness disproportionation, thus improves the viewing quality of user.
Further understand feature of the present invention and technology contents for enable, refer to following detailed description for the present invention and accompanying drawing, but these illustrate and institute's accompanying drawings is only used to the present invention is described, but not any restriction is done to right of the present invention.
Accompanying drawing explanation
Fig. 1 shows the circuit diagram of the display device of prior art.
Fig. 2 A shows the local circuit schematic diagram of the display device according to one embodiment of the invention.
Fig. 2 B shows the partial cutaway schematic of the display device according to one embodiment of the invention.
Fig. 3 shows the local circuit schematic diagram of the display device according to another embodiment of the present invention.
Fig. 4 A shows the circuit diagram of the driving transistors according to one embodiment of the invention.
Fig. 4 B shows the graph of relation according to the drive current of one embodiment of the invention, gray scale voltage and bucking voltage.
Fig. 4 C shows the critical voltage of driving transistors and the graph of relation of bucking voltage of foundation one embodiment of the invention.
Fig. 5 shows the process flow diagram of the light-dimming method of the display device according to one embodiment of the invention.
[main element symbol description]
1: display device 10: the first on-off circuit
12: second switch circuit 14: the first electric capacity
16: the second electric capacity 18: driving transistors
20: light emitting diode S1: sweep trace
D1: luma data line D2: offset data line
Vdd: high voltage end Vss: low-voltage end
302: glass substrate 304: adhesion layer
306: grid layer 308: insulation course
310: channel layer 312: etch stop layer
314: electrode layer 316: protective seam
318: flatness layer 320: electrode layer
322: insulation course 324: LED layers
326: electrode layer
4: display device 40: the first on-off circuit
42: second switch circuit 44: electric capacity
46: electric capacity 48: driving transistors
50: light emitting diode S2: sweep trace
S3: sweep trace D3: data line
6: driving transistors VG: the first grid is extreme
VG ': the extreme VS of second gate: source terminal
VD: gate terminal Id: drive current
S70 ~ S74: steps flow chart 9: display device
90: switching transistor 92: electric capacity
94: driving transistors 96: light emitting diode
Scan: sweep trace Data: data line
Embodiment
Show the local circuit schematic diagram of the display device according to one embodiment of the invention please also refer to Fig. 2 A and Fig. 2 B, Fig. 2 A, Fig. 2 B shows the partial cutaway schematic of the display device according to one embodiment of the invention.As shown in the figure, display device 1 has multiple pixel groups, at least has light emitting diode 20 and driver module (comprising component symbol 10,12,14,16,18), make driver module can drive light emitting diode 20 in each pixel groups.Specifically, the first on-off circuit 10 in driver module couples luma data line D1, the first electric capacity 14 and driving transistors 18 respectively, and second switch circuit 12 couples offset data line D2, the second electric capacity 16 and driving transistors 18 respectively.Driving transistors 18 is four end element, the first grid of driving transistors 18 couples the first on-off circuit 10 and the first electric capacity 14 extremely respectively, the second gate of driving transistors 18 couples second switch circuit 12 and the second electric capacity 16 extremely respectively, the drain electrode end of driving transistors 18 couples high voltage end Vdd, and the source terminal of driving transistors 18 couples low-voltage end Vss through light emitting diode 20.Below do with regard to each portion element in display device 1 respectively and further illustrate.
First on-off circuit 10 is controlled by sweep trace S1 and optionally conducting or cut-off, and when the first on-off circuit 10 is switched on, on luma data line D1, the gray scale voltage of carrying just can write the first electric capacity 14 smoothly.In practice, sweep trace S1 can be connected to the gate drivers (not shown) in display device 1, and determines whether conducting first on-off circuit 10 by gate drivers.At this, depict a kind of possible embodiment of the first on-off circuit 10 although Fig. 2 A take transistor as example, the first on-off circuit 10 of the present invention should not be limited with transistor.For example, the first on-off circuit 10 can by multiple transistor form or select other on-off element to carry out alternative switch transistor, can optionally freely design in person of an ordinary skill in the technical field.
Please continue see Fig. 2 A, second switch circuit 12 is controlled by sweep trace S1 and optionally conducting or cut-off equally, and when second switch circuit 12 is switched on, on offset data line D2, the bucking voltage of carrying just can write the second electric capacity 16 smoothly.In this embodiment, the control signal that sweep trace S1 carries controls the first on-off circuit 10 and second switch circuit 12 simultaneously, namely gate drivers (not shown) controls whether to write gray scale voltage and bucking voltage simultaneously, but the present invention should not as limit.Please note, the present embodiment illustrate only a kind of possible circuit connecting relation, as long as but driving transistors 18 still can adjust drive current by gray scale voltage and bucking voltage, also suitably can change over the circuit connecting relation of other equivalences in person of an ordinary skill in the technical field.
In order to more know entity structure and the element characteristic of driving transistors 18, refer to the diagrammatic cross-section of the driving transistors 18 shown by Fig. 2 B.First, substrate 302 can be glass or plastic material, and substrate 302 can be provided with adhesion layer 304 and be beneficial to arrange other functional layers on substrate 302.The grid layer 306 of driving transistors 18 is arranged on adhesion layer 304, and grid layer 306 and adhesion layer 304 arrange insulation course 308 again.Channel layer 310 is arranged on insulation course 308, and the insulation course 308 of part and channel layer 310 also have etch stop layer 312, damages in etching process to avoid the structure below etch stop layer 312.Grid layer 306 can be that the metal/alloy such as copper, aluminium, molybdenum, titanium of single or multiple lift formed.Adhesion layer 304, insulation course 308 and etch stop layer 312 can be oxide (SiOx) or nitride (SiNx) structure of the silicon of single or multiple lift.
Then, electrode layer 314 is arranged on etch stop layer 312, and the channel layer 310 of contact portion.In practice, the electrode layer 314 in Fig. 2 B on the left of contact channels layer 310 can be considered the drain electrode of the driving transistors 18 in Fig. 2 A, and namely the electrode layer 314 in left side can be electrically connected to high voltage end Vdd.In addition, the electrode layer 314 in Fig. 2 B on the right side of contact channels layer 310 can be considered the source electrode of the driving transistors 18 in Fig. 2 A.After protective seam 316 is set above electrode layer 314, in order to make ensuing technique more smooth, in practice, also one deck flatness layer 318 can be set, to form a comparatively smooth plane.Electrode layer 314 can be that the metal/alloy such as copper, aluminium, molybdenum, titanium of single or multiple lift formed.Flatness layer 318 material can be organic resin.
In general, light emitting diode 20 in Fig. 2 A is the directly stacked region (light-emitting zone namely on panel) of right electrodes layer 320 in Fig. 2 B, LED layers 324 and electrode layer 326, and also has the non-luminous region on insulation course 322(i.e. panel in Fig. 2 B above left electrodes layer 320).At this, LED layers 324 can be made by Organic Light Emitting Diode material, and electrode layer 320 and electrode layer 326 are anode and the negative electrode of LED layers 324 respectively.In other words, in fact light emitting diode 20 can be a kind of Organic Light Emitting Diode (OLED), and electrode layer 320 and electrode layer 326 can be made up of transparent conductive material (such as ITO) or other suitable materials.Insulation course 322 material can be organic resin.
Note that the electrode layer 320 respectively shown with two blocks in Fig. 2 B, the electrode layer 314(on the right side of the electrode layer 320 contact channels layer 310 on right side and the source electrode of driving transistors 18), and the electrode layer 320 in left side is positioned on channel layer 310.From the principle of semiconductor, when the electrode layer 320 in left side provides positive voltage, electronics is more easily assembled and forms current channels, and the critical voltage of driving transistors 18 will be reduced, and the drive current that driving transistors 18 exports can improve thereupon.Contrary, when the electrode layer 320 in left side provides negative voltage, electronics is not more easily gathered into current channel, and the critical voltage of driving transistors 18 will be improved, and the drive current that driving transistors 18 exports can decrease.
Accordingly, by the design of the driving transistors 18 in the present embodiment, each pixel groups in display device 1 is made not need significantly to increase the quantity of transistor, also simply by being stored in the critical voltage of the bucking voltage adjustment driving transistors 18 in the second electric capacity 16, thus the drive current of the light emitting diode 20 that driving transistors 18 is exported to can be have adjusted.
In order to enumerate other equivalent electrical circuit annexation of display device 1, invention further discloses another kind of possible embodiment.Refer to Fig. 3, Fig. 3 shows the local circuit schematic diagram of the display device according to another embodiment of the present invention.As shown in Figure 3, display device 4 can have multiple pixel groups equally, at least has light emitting diode 50 and driver module (comprising component symbol 40,42,44,46,48), make driver module can drive light emitting diode 50 in each pixel groups.Identical with previous embodiment, the circuit connecting relation of electric capacity 44, electric capacity 46, driving transistors 48 and light emitting diode 50 and mode of operation, the present embodiment does not repeat them here.With previous embodiment unlike, the first on-off circuit 40 and second switch circuit 42 are connected to same data line D3, and are controlled by different sweep trace S2, S3 respectively.
Specifically, data line D3 can transmit gray scale voltage and bucking voltage in timesharing ground, and the period of transmitting gray scale voltage or bucking voltage lucky corresponding sweep trace S2, S3 should control period of the first on-off circuit 40 or second switch circuit 42 conducting.For example, the first on-off circuit 40 is controlled by sweep trace S2 and optionally conducting or cut-off, and when the first on-off circuit 40 is switched on, data line D3 should transmit gray scale voltage just, makes gray scale voltage just can write electric capacity 44 smoothly.On the other hand, when gray scale voltage write electric capacity 44 is rear and second switch circuit 42 is switched on, data line D3 can transfer to transmit bucking voltage, makes bucking voltage just can write electric capacity 46 smoothly.At this, the present embodiment does not limit the order or delivery time length that transmit gray scale voltage and bucking voltage, can optionally freely design in person of an ordinary skill in the technical field.
Certainly, depict a kind of possible embodiment of the first on-off circuit 40 and second switch circuit 42 although Fig. 3 is example equally with transistor, the first on-off circuit 40 of the present invention is same with second switch circuit 42 should not be limited with transistor.
With the example of Fig. 3 reality, in order to judge whether display device 4 produces the problem of picture brightness skewness (mura effect), in time carrying out QC or detect, first can also utilize the picture of one group of image acquiring device (not shown) shooting display device 4 when luminescence, described image acquiring device such as can select CCD camera or other suitable photographic goods.Then, also can observe via treating apparatus (not shown) or judge in the picture that photographs in image acquiring device, whether the brightness of the light emitting diode 50 in each group pixel groups meets standard, and such as whether whether brightness lower than the first threshold value (namely too dark) or higher than the second threshold value (namely too bright).Certainly, the first threshold value and the second threshold value can be selected by user in advance voluntarily, and the first threshold value can be equal with the second threshold value, or the lower limit be respectively in a range intervals and the upper limit, and the present embodiment is not limited at this.
In practice, the first threshold value and the second threshold value can be arranged in a look-up table in advance, and described look-up table can record the relation of the corresponding bucking voltage of brightness.For example, when the light emitting diode 50 that treating apparatus judges in some pixel groups too dark or too bright time, can find out by look-up table the bucking voltage being suitable for compensation for drive transistor 48, and be stored in electric capacity 46 via second switch circuit 42.Accordingly, the critical voltage of driving transistors 48 can be dynamically adjusted, and the brightness of described pixel groups is rear all in an acceptable scope in compensation.
From the data of actual measurement, please also refer to Fig. 4 A, Fig. 4 B and Fig. 4 C, Fig. 4 A shows the circuit diagram of the driving transistors according to one embodiment of the invention, Fig. 4 B shows the graph of relation according to the drive current of one embodiment of the invention, gray scale voltage and bucking voltage, and Fig. 4 C shows the critical voltage of driving transistors and the graph of relation of bucking voltage of foundation one embodiment of the invention.Driving transistors 6 has the extreme VG of the first grid, the extreme VG ' of second gate, source terminal VS and gate terminal VD, the extreme VG of the first grid is in order to couple the first on-off circuit of previous embodiment and the electric capacity storing gray scale voltage, and the extreme VG ' of second gate is in order to couple the second switch circuit of previous embodiment and the electric capacity storing bucking voltage.
From the real data of Fig. 4 B, when gray scale voltage is constant (when such as VG is 8V), the bucking voltage that the extreme VG ' of second gate receives is higher, then drive current Id obviously can along with raising.In addition, from the real data of Fig. 4 C, the bucking voltage that the extreme VG ' of second gate receives is higher, then the critical voltage Vth of driving transistors 6 can be lower, from the base current formula of transistor, critical voltage Vth lower then drive current Id will inevitably be higher, and critical voltage Vth higher then drive current Id can along with lower.By this, the driving transistors 6 that the present embodiment provides can export to the drive current of light emitting diode easily with the adjustment of different bucking voltages.
In order to make person of an ordinary skill in the technical field can understand spirit of the present invention, below the light-dimming method of display device collocation display device of the present invention is illustrated more clearly in.
Please also refer to Fig. 3 and Fig. 5, Fig. 5 shows the process flow diagram of the light-dimming method of the display device according to one embodiment of the invention.As shown in the figure, in step S70, the present embodiment first can utilize the picture of one group of image acquiring device (not shown) shooting display device 4 when luminescence, and judged in the picture photographed in image acquiring device by treating apparatus (not shown), whether whether the brightness of the light emitting diode 50 in each group pixel groups lower than the first threshold value (namely too dark) or higher than the second threshold value (namely too bright).
In step S72, when the light emitting diode 50 that treating apparatus judges in some pixel groups is too dark, the bucking voltage exporting to electric capacity 46 can be improved, reduce the critical voltage of driving transistors 48 according to this, the drive current flowing through light emitting diode 50 is improved, thus increases the brightness of light emitting diode 50.In step S74, when the light emitting diode 50 that treating apparatus judges in some pixel groups is too bright, the bucking voltage exporting to electric capacity 46 can be reduced, improve the critical voltage of driving transistors 48 according to this, the drive current flowing through light emitting diode 50 is reduced, thus reduces the brightness of light emitting diode 50.
In sum, the display device that the embodiment of the present invention provides and light-dimming method thereof, the bucking voltage exporting to driving transistors can be adjusted according to the brightness of display frame, make driving transistors can modulate the numerical value of critical voltage according to the size of bucking voltage, adjust the drive current of driving transistors output by this to change the brightness of light emitting diode.Thus, the display frame of described display device can reduce or avoid the problem of brightness disproportionation, thus improves the viewing quality of user.
By the detailed description of above preferably specific embodiment, it is desirable to clearly to describe feature of the present invention and spirit, and not with above-mentioned disclosed preferred specific embodiment, category of the present invention is limited.On the contrary, its objective is wish to contain various change and tool equality be arranged in the present invention institute in the category of the scope of the claims applied for.