CN103663360A - Terahertz device and preparation method thereof - Google Patents
Terahertz device and preparation method thereof Download PDFInfo
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Abstract
A provided terahertz device is characterized by comprising a terahertz element and a micropore film; the terahertz element possesses an incident plane and an emitting surface; the micropore film covers at least on the incident plant; the micropore film comprises a plurality of micropore units possessing a gradually-changed shaped from large to small along the direction towards the terahertz element. The terahertz device provided by the invention is capable of effectively reducing the Fresnel reflection of terahertz from air to the terahertz element caused by sudden change of refractive index, so that the terahertz energy consumption is reduced and the anti-reflection purpose is realized. Additionally, the invention also provides a method for preparing the terahertz device. According to the preparation method provided by the invention, because the surface of the terahertz element is filmed and a hot padding method is employed for preparing the terahertz device, the technology is simple, the cost is relatively low and the application scope is wide; and the preparation method is not only applicable to silicon chip filming, but also is applicable to film the surface of other non-silicon terahertz elements.
Description
Technical field
The invention belongs to Terahertz Technology field, be specifically related to a kind of THz devices that strengthens terahertz emission transmissivity and preparation method thereof.
Background technology
THz wave is normally defined the electromagnetic wave of frequency within the scope of 0.1～10THz.The English of Terahertz is Terahertz(THz), 1THz=10
12hz, wavelength is 30～3000 μ m.The more THz wave of at present research is conventionally within the scope of 0.1～10THz, and its wave band, between microwave and infrared ray, belongs to far infrared and submillimeter wave category, sometimes also referred to as T ray.
High Resistivity Si is completely transparent for THz wave, and absorptivity, no better than zero, just as glass is for visible ray, is applicable to for making the devices such as Terahertz eyeglass, window very much.But the refractive index of silicon is very high, be far longer than the refractive index of air.We know, when light is n from a kind of refractive index
1medium to another kind of refractive index, be n
2medium while propagating, at both intersection, be that reflection of light and refraction (meeting fresnel formula) may occur on interface simultaneously, the energy reflecting can be dissipated in air and cause damage.
THz wave is electromagnetic wave, due to the existence of Fresnel loss, when THz wave is vertically mapped to silicon face from air, has and approaches 30% power because reflection loss is fallen, and only remaining 70% Terahertz energy can see through the first surface of device.Consider two surfaces of silicon device, if ignore the interference effect that between two surfaces of silicon, a small amount of ripple vibrates back and forth and produces, THz wave energy loss after seeing through two surfaces can reach 46%, and observation and experiment is made troubles simultaneously.
Much the higher THz devices of transmissivity is to modify resulting device at High Resistivity Si body surface at present, its preparation method is mainly that femtosecond laser is processed black silicon structure and chemical attack pyramid structure etc., these THz devices are because of complicated process of preparation, thereby cost is higher, and in preparation process, use laser, chemistry etc. method have certain risk.The more important thing is, because the anti-reflection method of this class is only confined to the modification to silicon face, can not be applicable to other material interface relevant to terahertz emission, as GaAs and single zinc etc.
Summary of the invention
The object of the present invention is to provide a kind of THz devices, to address the above problem.
The present invention also aims to provide a kind of preparation method of above-mentioned THz devices.
To achieve these goals, the technical solution used in the present invention is: a kind of THz devices, it is characterized in that, and comprising: Terahertz element, has the plane of incidence and exit facet; And microporous membrane, microporous membrane at least covers on the plane of incidence, and microporous membrane has a plurality of micropores unit, and micropore unit has towards the Terahertz component orientation shape of gradual change from large to small.
In addition, microporous membrane involved in the present invention can also have such feature: wherein, microporous membrane is made by the high transparent material in Terahertz territory, and thickness is 1 micron～1 millimeter, and the high transparent material in Terahertz territory is macromolecular material or polymer-based composite.
Further, microporous membrane involved in the present invention can also have such feature: wherein, above-mentioned macromolecular material is any one in polymethyl methacrylate, poly-4-methylpentene, polyethylene, polypropylene, cyclic olefine copolymer or polystyrene; Above-mentioned polymer-based composite is the macromolecular material that is compounded with any one or at least two kinds in silicon, silica or alundum (Al2O3) nano particle.
In addition, micropore unit involved in the present invention can also have such feature: wherein, micropore unit be shaped as any one in turbination, chamfered edge taper, reverse frustoconic or inverted trapezoidal shape.
And, the invention still further relates to a kind of method of preparing above-mentioned THz devices, it is characterized in that, comprise the following steps: step 1: the high transparent material in Terahertz territory is dissolved in certain solvent to wiring solution-forming; Step 2: solution is revolved to Tu on the plane of incidence, dries, obtain being coated with on the plane of incidence the high transparent material in Terahertz territory film first treat voltage device; Step 3: treat that by first voltage device and mould are heated to above the temperature of the glass transition temperature of the high transparent material in Terahertz territory jointly, penetrate thin film on the plane of incidence with mould, cooling, the demoulding, obtains THz devices.
In addition, microporous membrane involved in the present invention can also have such feature: wherein, microporous membrane also covers on exit facet.
And the present invention also provides a kind of method of preparing above-mentioned THz devices, it is characterized in that, comprises the following steps: step 1: the high transparent material in Terahertz territory is dissolved in certain solvent to wiring solution-forming; Step 2: solution is revolved to Tu on the plane of incidence, dries, then solution is revolved to Tu on exit facet, dry, obtain the plane of incidence and exit facet be all coated with the high transparent material in Terahertz territory film second treat voltage device; Step 3: treat that by second voltage device and mould are heated above the temperature of the glass transition temperature of the high transparent material in Terahertz territory jointly, penetrate respectively thin film on the plane of incidence and exit facet with mould, cooling, the demoulding, obtains THz devices.
In addition, the mould that above-mentioned preparation method adopts can also have such feature: wherein, mould has a plurality of protrusion element, and protrusion element has any one shape in regular conical, orthopyramid shape, positive truncated cone-shaped and the positive trapezoidal shape matching with micropore unit.
In addition, the mould that above-mentioned preparation method adopts can also have such feature: wherein, mould is metal die.
In addition, the solvent that above-mentioned preparation method adopts can also have such feature: wherein, solvent is any one or a few the mixture in toluene, dimethylbenzene, trimethylbenzene, chlorobenzene, methyl phenyl ethers anisole, acetone, oxolane and chloroform.
Effect and the effect of invention
According to a kind of THz devices provided by the present invention, owing to having covered the microporous membrane of one deck on the plane of incidence at Terahertz element, microporous membrane has a plurality of micropores unit, micropore unit has the micro-structural of gradual change from large to small towards Terahertz component orientation, therefore the closer to THz devices surface, air area occupied is fewer, material area occupied is more, thereby effectively reduced the Fresnel reflection that THz wave produces due to refractive index abrupt change to Terahertz element from air, reduce Terahertz energy loss, reached anti-reflection object.
In addition, because employing is filmed and hot padding method can cover one deck microporous membrane at Terahertz element surface, this preparation method's technique is simple, cost is lower, applied widely, can not only prepare the silicon chip that is coated with this microporous membrane, also can prepare and be coated with other non-silicon THz devices of this microporous membrane.
Accompanying drawing explanation
Fig. 1 is the terahertz emission schematic diagram of silicon chip in comparative example;
Fig. 2 is THz devices involved in the present invention structural representation in embodiment mono-;
Fig. 3 is micropore unit involved in the present invention structural representation in embodiment mono-;
Fig. 4 is that preparation method involved in the present invention is revolved the structural representation of Tu film forming in embodiment mono-;
Fig. 5 is THz devices involved in the present invention profile in embodiment mono-; And
Fig. 6 is THz devices involved in the present invention terahertz emission schematic diagram in embodiment bis-.
The specific embodiment
Below in conjunction with accompanying drawing, THz devices involved in the present invention and preparation method thereof is illustrated.
< comparative example >
This comparative example adopts low-mix high resistant silicon chip simulation Terahertz element, by silicon chip cut wash dry up standby.
Fig. 1 is the terahertz emission schematic diagram of silicon chip in comparative example.
As shown in Figure 1, THz wave is from air borne, and the plane of incidence 101 and the exit facet 102 of silicon chip 100 crossed in transmission, supposes that air refraction is 1, i.e. n
air=1, the refractive index of silicon is 3.42.
Incident ray, reflection ray and refracted ray are respectively θ with the angle that normal forms separately
i, θ
rand θ
t, the power of incident light is called reflectivity R by the ratio of boundary reflection, and the ratio of refraction is called transmittance T, and transmittance T is: T=1-R.The concrete form of reflectivity and transmittance is also relevant with incident polarisation of light.
When the electric vector of incident light is parallel to the plane of incidence 101 of silicon chip 100, while being s polarization, reflectivity is:
When the electric vector of the incident light plane of incidence 101 perpendicular to silicon chip 100, while being p polarization, reflectivity is:
When incident light is during without polarization, contain s polarization and the p polarization of equivalent, reflectivity is both mean value, that is:
When THz wave is with nearly normal incident, that is: θ
i≈ θ
tduring ≈ 0, the reflectivity R of 101 pairs of THz waves of the plane of incidence and transmittance T are respectively:
Wherein, n
1the first medium passing for THz wave is the refractive index of air, n
2the second medium passing for THz wave is the refractive index of silicon.
100 pairs of Terahertz wave reflections of silicon chip comprise the reflection of the plane of incidence 101 and the reflection of exit facet 102, and light wave can vibrate and form interference back and forth between two-layer on a small quantity, as ignore this interference effect, and the double-sided reflecting after two-layer merging compares R
twoand two-sided transmittance T
twobe respectively:
T
two=1-R
two(4)
According to formula (1), (2), (3) and (4), THz wave sees through after silicon chip 100, and the reflectivity R of the plane of incidence 101 is 30%, total reflectivity R of the plane of incidence 101 and exit facet 102
alwaysbe 46.13%, the total transmittance T of the plane of incidence 101 and exit facet 102
alwaysbe 53.87%.
< embodiment mono->
The present embodiment one provides a kind of plane of incidence to have the THz devices of polystyrene micropore film.
Fig. 2 is THz devices involved in the present invention structural representation in embodiment mono-.
As shown in Figure 2, the related THz devices 200 of the present embodiment one comprises Terahertz element 201 and microporous membrane 202, and Terahertz element 201 is low-mix high resistant silicon chip, has the plane of incidence 203 and exit facet 204, microporous membrane 202 is polystyrene, covers on the plane of incidence 203.Microporous membrane 202 has a plurality of micropores unit 205.
Fig. 3 is micropore unit involved in the present invention structural representation in embodiment mono-.
As shown in Figure 3, micropore unit 205 has obconic shape 206 towards the direction of Terahertz element 201.
The preparation of THz devices 200:
Fig. 4 is that preparation method involved in the present invention is revolved the structural representation of Tu film forming in embodiment mono-.
Fig. 5 is THz devices involved in the present invention profile in embodiment mono-.
Step 1: get polystyrene and be dissolved in toluene, being mixed with viscosity is the polystyrene toluene solution of 1500cp.
Step 2: Terahertz element 201 is placed on sol evenning machine, adjusting suitable rotating speed is evenly spin-coated on the polystyrene solution of preparing in step 1 on the plane of incidence 203 of Terahertz element 201, after revolving Tu and completing, be placed in culture dish and be placed on dryer and dry, be chilled to gradually room temperature, obtain being coated with on the plane of incidence 203 as shown in Figure 4 the Terahertz element 201 of polystyrene film 207, approximately 50 microns of the thickness of film 207.
Step 3: according to the glass transformation temperature of polystyrene, the Terahertz element 201 that is coated with polystyrene film 207 is heated to 100 ℃ together with having the metal die of Multi-tip structure, power with suitable counterweight is vertically pressed in hot metal die on the polystyrene film 207 of glassy state, making metal die penetrate polystyrene film 207 contacts with the plane of incidence 203, be chilled to room temperature, mold removal, as shown in Figure 5, on polystyrene film 207, form the cone shape micropore of a series of uniform inverted standard unit 205, the THz devices 200 obtaining.
The THz devices 200 of preparing for the present embodiment, from the aspect at place, inverted conical top, the closer to the plane of incidence 203 of Terahertz element 201, air area occupied compares S
air% is fewer, and polystyrene area occupied compares S
pS% is more, and establishing equivalent refractive index is N:
Wherein, S
air%+S
pS%=1, has equivalent graded index by 205 pairs of unit of formula (5) the cone shape micropore of known inverted standard THz wave.
Polystyrene refractive index is 1.59-1.60, is assumed to be 1.59 here, i.e. n
ps=1.59.When the related THz devices of the present embodiment 200 is crossed in THz wave transmission from air, according to formula (1) and (2), obtain respectively the reflectivity of air and polystyrene contact interface and the reflectivity of polystyrene and silicon chip contact interface, according to the reflectivity of the two, can obtain the reflectivity R of the plane of incidence 203
1be 13%.
With in comparative example, compare, the transmittance of the plane of incidence 203 of the THz devices 200 that the present embodiment one is related has improved 17% than the transmittance of the plane of incidence of silicon chip 100 101.
< embodiment bis->
The present embodiment two provides a kind of plane of incidence and exit facet all to have the THz devices of polystyrene micropore film:
Fig. 6 is THz devices involved in the present invention terahertz emission schematic diagram in embodiment bis-.
As shown in Figure 6, the THz devices 300 that the present embodiment provides comprises that Terahertz element 301 is the microporous membrane 302 of low-mix high resistant silicon chip and two-layer polystyrene.
The preparation method of this THz devices 300:
Step 1: get polystyrene and be dissolved in toluene, being mixed with viscosity is the polystyrene toluene solution of 1500cp.
Step 2: silicon chip 301 is placed on sol evenning machine, adjusting suitable rotating speed is evenly spin-coated on the polystyrene solution of preparing in step 1 on the plane of incidence of silicon chip 301, after revolving Tu and completing, be placed in culture dish and be placed on dryer and dry, be chilled to gradually room temperature, again the polystyrene solution of preparing in step 1 is evenly spin-coated on the exit facet of silicon chip 301, after revolving Tu and completing, be placed in culture dish and be placed on dryer and dry, be chilled to gradually room temperature, obtain the silicon chip 301 that the plane of incidence and exit facet are all coated with polystyrene film, approximately 50 microns of the thickness of film.
Step 3: according to the glass transition temperature of polystyrene, the silicon chip 301 that is coated with polystyrene film is heated to 100 ℃ together with two metal dies with Multi-tip structure, power with suitable counterweight is vertically pressed in two hot metal dies on the polystyrene film of glassy state, make metal die penetrate polystyrene film, be chilled to room temperature, mold removal, obtains THz devices 300 as shown in Figure 6.
According to formula (1) and (2), obtain respectively the reflectivity of air and polystyrene contact interface and the reflectivity of polystyrene and silicon chip contact interface, according to the reflectivity of the two, the reflection that can obtain the plane of incidence is the reflectivity of exit facet when.
According to formula (3) and formula (4), two-sided total reflectivity R of this THz devices 300
two 1be 23.54%, two-sided transmittance T
two 1be 76.46%.
Compare with the silicon chip in comparative example, the related THz devices 300 of the present embodiment two has improved 22.59% than the two-sided transmittance of silicon chip.
< embodiment tri->
The present embodiment three provides the THz devices all on a kind of plane of incidence and exit facet with polymethyl methacrylate (PMMA) microporous membrane.
Select low-mix high resistant silicon chip simulation Terahertz element, PMMA glass transition temperature is 105 ℃, and refractive index is 1.482～1.521 to get 1.50 here.
Preparation method:
PMMA is dissolved in to methyl phenyl ethers anisole, with reference to the preparation method of embodiment bis-, obtains all having on the plane of incidence and exit facet the THz devices of PMMA microporous membrane.
The plane of incidence reflectivity R of this THz devices
2be 15%, two-sided total reflectivity R
two 2be 26.09%, two-sided transmittance T
two 2be 73.91%.
Compare with the silicon chip in comparative example, the plane of incidence transmittance of the THz devices that the present embodiment three is related has improved 15%, and two-sided transmittance has improved 20.04%.
< embodiment tetra->
The present embodiment four provides a kind of plane of incidence and exit facet to be all coated with the THz devices of nano silica fume composite polystyrene material microporous membrane.
Select low-mix high resistant silicon chip simulation Terahertz element, get polystyrene and be dissolved in dimethylbenzene, then add nano silica fume to make homogeneous mixture, with reference to the preparation method of embodiment bis-, prepare the THz devices that microporous membrane is nano silica fume composite.
The refractive index of this composite can regulate according to the addition difference of nano silica fume, and refractive index is between 1.6-3.4, and the present embodiment four adopts refractive index n
multiple=1.8 composite.
The plane of incidence reflectivity R of the THz devices that the present embodiment four is related
3be 9.5%, two-sided total reflectivity R
two 3be 17.30%, two-sided transmittance T
two 3be 82.70%.
Compare with the silicon chip in comparative example, the plane of incidence transmittance of the THz devices that the present embodiment four is related has improved 20.5%, and two-sided transmittance has improved 28.83%.
The effect of embodiment and effect
The THz devices providing according to embodiment mono-to four, owing to having covered one deck microporous membrane on the plane of incidence at low-mix high resistant silicon chip, microporous membrane is by a plurality of obconic micropore cell formations, the closer to silicon chip surface, air area occupied is fewer, polystyrene area occupied is more, thereby effectively reduced the Fresnel reflection producing due to refractive index abrupt change from air to silicon chip, reduced the loss of Terahertz energy, compare with comparative example, the plane of incidence reflectivity that is coated with the silicon chip of microporous membrane significantly reduces, and reaches anti-reflection object.
In addition, in the THz devices that above-described embodiment one to four provides, the plane of incidence is compared with the THz devices that is only coated with microporous membrane on the plane of incidence with the two-sided transmittance that exit facet is all coated with the THz devices of microporous membrane, and transmittance has and significantly improves.
In addition, the preparation method of the THz devices providing according to above-described embodiment one to four, films and hot padding method prepares due to employing, and technique is simple, and cost is lower, has avoided using laser or other comparatively dangerous preparation method.
In addition, the class coating material cost of material of above-described embodiment one to four employing is low, and anti-reflection performance is good.
Certainly THz devices involved in the present invention and preparation method thereof is not merely defined in the content in above-described embodiment.Above content is only the basic explanation of the present invention under conceiving, and according to any equivalent transformation that technical scheme of the present invention is done, all should belong to protection scope of the present invention.
In above-described embodiment, related microporous membrane adopts polystyrene, polymethyl methacrylate or nano silica fume composite polystyrene material to make, the microporous membrane of THz devices involved in the present invention can also be selected from high transparent macromolecular material or the polymer-based composites in other Terahertz territories and make, as poly-4-methylpentene, polyethylene, polypropylene, cyclic olefine copolymer or be compounded with the polymer composite of silica, alundum (Al2O3) nano particle.
In above-described embodiment, related micropore unit is for to conical shape, and the micropore unit of THz devices involved in the present invention can also be tapered for chamfered edge, any one shape in rounding bench-type and inverted trapezoidal type etc.; The protrusion element of the mould adopting in above-described embodiment accordingly, can also be any one shape in orthopyramid type, positive circular platform type and positive halfpace type.
In above-described embodiment, related Terahertz element is low-mix high resistant silicon chip, and Terahertz element involved in the present invention can also be the non-silicon Terahertz element of being made by materials such as GaAs and single zinc.
The preparation method of THz devices involved in the present invention not only can, for filming at silicon chip surface, also can film at other non-silicon Terahertz element surfaces.
Mould involved in the present invention can also be selected from that other is high temperature resistant and have a material of certain degree of hardness.
The preparation method of THz devices involved in the present invention, wherein, solvent can be selected from the mixture of any one or at least two kinds in toluene, dimethylbenzene, trimethylbenzene, chlorobenzene, acetone, oxolane, chloroform.
Claims (10)
1. a THz devices, is characterized in that, comprising:
Terahertz element, has the plane of incidence and exit facet; And
Microporous membrane, at least covers on the described plane of incidence,
Described microporous membrane has a plurality of micropores unit, and described micropore unit has towards the described Terahertz component orientation shape of gradual change from large to small.
2. THz devices according to claim 1, is characterized in that:
Wherein, described microporous membrane is made by the high transparent material in Terahertz territory, and thickness is 1 micron～1 millimeter, and the high transparent material in described Terahertz territory is macromolecular material or polymer-based composite.
3. THz devices according to claim 2, is characterized in that:
Wherein, described macromolecular material is any one in polymethyl methacrylate, poly-4-methylpentene, polyethylene, polypropylene, cyclic olefine copolymer or polystyrene;
Described polymer-based composite is the macromolecular material that is compounded with any one or at least two kinds in silicon, silica or alundum (Al2O3) nano particle.
4. THz devices according to claim 1, is characterized in that:
Wherein, described micropore unit is shaped as any one in turbination, chamfered edge taper, reverse frustoconic or inverted trapezoidal shape.
5. THz devices according to claim 1, is characterized in that:
Wherein, described microporous membrane also covers on described exit facet.
6. a method of preparing the THz devices as described in any one in claim 1～4, is characterized in that, comprises the following steps:
Step 1: the high transparent material in described Terahertz territory is dissolved in certain solvent to wiring solution-forming;
Step 2: described solution is revolved to Tu on the described plane of incidence, dries, obtain being coated with on the described plane of incidence the high transparent material in described Terahertz territory film first treat voltage device;
Step 3: treat that by described first voltage device and mould are heated to above the temperature of the glass transition temperature of the high transparent material in described Terahertz territory jointly, with described mould, penetrate described thin film on the described plane of incidence, cooling, the demoulding, obtains described THz devices.
7. a method of preparing THz devices as claimed in claim 5, is characterized in that, comprises the following steps:
Step 1: the high transparent material in described Terahertz territory is dissolved in certain solvent to wiring solution-forming;
Step 2: described solution is revolved to Tu on the described plane of incidence, dries, more described solution is revolved to Tu on described exit facet, dry, obtain the described plane of incidence and described exit facet be all coated with the high transparent material in described Terahertz territory film second treat voltage device;
Step 3: treat that by described second voltage device and mould are heated above the temperature of the glass transition temperature of the high transparent material in described Terahertz territory jointly, with described mould, penetrate respectively described thin film on the described plane of incidence and described exit facet, cooling, the demoulding, obtains described THz devices.
8. according to the preparation method described in claim 6 or 7, it is characterized in that:
Wherein, described mould has a plurality of protrusion element, and described protrusion element has any one shape in regular conical, orthopyramid shape, positive truncated cone-shaped and the positive trapezoidal shape matching with described micropore unit.
9. according to the preparation method described in claim 6 or 7, it is characterized in that:
Wherein, described mould is metal die.
10. according to the preparation method described in claim 6 or 7, it is characterized in that:
Wherein, described solvent is the mixture of any one or at least two kinds in toluene, dimethylbenzene, trimethylbenzene, chlorobenzene, methyl phenyl ethers anisole, acetone, oxolane and chloroform.
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| CN107991735B (en) * | 2016-10-27 | 2019-11-15 | 华东师范大学 | Metal capillary cyclic olefin polymer dielectric film Terahertz hollow-core fiber and preparation |
| CN111569674A (en) * | 2020-05-19 | 2020-08-25 | 沪本新材料科技（上海）有限公司 | Method for manufacturing PET film by using terahertz material |
| CN111569674B (en) * | 2020-05-19 | 2022-07-08 | 沪本新材料科技（上海）有限公司 | Method for manufacturing PET film by using terahertz material |
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