CN103658659A - Near-net forming method of aluminum-silicon-carbide IGBT substrate with double faces coated with aluminum - Google Patents
Near-net forming method of aluminum-silicon-carbide IGBT substrate with double faces coated with aluminum Download PDFInfo
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Abstract
A near-net forming method of an aluminum-silicon-carbide IGBT substrate with double faces coated with aluminum comprises the steps that 1) a three-dimensional digital model of the aluminum-silicon-carbide IGBT substrate with the double faces coated with the aluminum is processed and stored as an STL file, and the STL file is input into a computer; 2) aluminum alloy powder is dried and dehumidified, and a mixture of aluminum alloy powder and silicon carbide powder is dried and dehumidified; 3) the aluminum alloy powder is placed in a powder feeder, and the mixture is placed in another powder feeder; 4) according to the thickness requirements of aluminum coating layers and an aluminum-silicon-carbide layer, which powder feeder is used for feeding the powder for each layer is determined, parameters are input into the computer, and control is conducted through the computer; 5) laser forming process parameters are set, laser melting rapid forming equipment is switched on, and under a protective gas environment, deposition of the planar aluminum layer-the aluminum-silicon-carbide layer-the spherical aluminum layer is completed. By means of the near-net forming method, the complex-shape aluminum-silicon-carbide IGBT substrate with the double faces coated with the aluminum can be manufactured directly, the substrate is compact in structure, the aluminum layers and the aluminum-silicon-carbide layer are combined firmly, the forming process is simple, and the utilization rate of raw materials is close to 100%.
Description
Technical field
The present invention relates to aluminium silicon carbide IGBT substrate, be specifically related to a kind of two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate.
Background technology
Aluminum silicon carbide composite material is due to the thermal coefficient of expansion that has high-termal conductivity, low-density, all mates with pottery and semiconductor chip, and the feature such as high rigidity and high-flexural strength, becomes electronic package material of new generation.Aluminium silicon carbide IGBT substrate prepared therefrom can effectively solve the heat dissipation problem of high integrated electronics, has been widely used in the fields such as high-power integrated circuit, bullet train current-variable controller.
It is plane that aluminium silicon carbide IGBT substrate requires an interarea, and another interarea is sphere, and in order to facilitate sphere processing and to improve the platability of substrate, need to be on IGBT substrate the two-sided aluminium that covers, an interarea engages fin or heat-sink unit as radiating surface; Another interarea is soldered on ceramic circuit board.For aluminium silicon carbide IGBT substrate is all engaged closely with ceramic circuit board and fin, the solder side that requires substrate is that plane, radiating surface are sphere.In addition, the volume fraction of the performance requirement carborundum of substrate high heat conductance and low thermal coefficient of expansion should be controlled within the scope of 40%-75%.
At present, prepare this high-volume fractional aluminium silicon carbide IGBT substrate and mainly adopt method of impregnation, first prepare silicon carbide porous precast body, then by high pressure or under passive state, aluminium immersion is seeped in carborundum precast body, finally by machining, go out needed shape.Because the material of aluminium silicon carbide is stone, make the machining difficulty of IGBT substrate,, cost is high,, production efficiency is low.For this reason, NEC chemical industry strain formula can propose the two-sided design of covering aluminium aluminium silicon carbide IGBT substrate (at CN 200580021286.0,200780015978.3 and all on the books in 200780014043.3), and by the improvement of aluminising frock, on aluminium silicon carbide IGBT substrate, realized the two-sided aluminium that covers.Alclad not only makes sphere processing directly on aluminium lamination, carry out, and can improve the platability of aluminium silicon carbide, very necessary to aluminium silicon carbide IGBT substrate.Yet, because the distortion of carborundum skeleton when infiltrating is large, in given size, process the two-sided aluminium lamination of even thickness, exist equally difficulty of processing large, process-cycle is long, the difficult problem that cost is high, and also the two-sided yield rate of covering aluminium aluminium silicon carbide IGBT substrate that can prepare is not high.In addition, adopt that method of impregnation prepares that the operation of aluminium silicon carbide IGBT substrate own is various, complex process, to frock require strict, raw material utilization ratio is low, and the geomery of substrate is had to considerable restraint.
Summary of the invention
The technical problem to be solved in the present invention is, overcomes prior art above shortcomings, provides a kind of technique simple, the two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate that finished product rate is high.
The technical solution adopted for the present invention to solve the technical problems is:
The two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate, comprises the steps:
1) save as stl file after the two-sided three-dimensional digital-to-analogue of covering aluminium aluminium silicon carbide IGBT substrate is processed by Slice Software, the data message of stl file is transported in the computer of laser fusion rapid molding equipment;
2) by Al alloy powder drying dehumidification, simultaneously by also drying dehumidification of the compound of the Al alloy powder mixing in proportion and silicon carbide powder;
3) Al alloy powder after drying dehumidification is put into a powder feeder of laser fusion quickly shaping device, by another powder feeder mixing in proportion and the compound of the Al alloy powder after drying dehumidification and silicon carbide powder has been put into laser fusion quickly shaping device;
4) according to the thickness requirement of IGBT substrate alclad (being plane aluminium lamination and sphere aluminium lamination) and aluminium silicon carbide layer, determine that every layer to the type of sending powder in laser molten pool to, determine to laser molten pool and send Al alloy powder to, or the compound of Al alloy powder and silicon carbide powder; Thereby determine which powder feeder powder feeding is every layer used, then by the corresponding powder feeder powder feeding of computer control, realize the real-time control to forming process;
5) laser forming technological parameter is set, opens laser fusion rapid molding equipment, under protective gas environment, complete the deposition of plane aluminium lamination-aluminium silicon carbide layer-sphere aluminium lamination.
Further, described step 2) in, Al alloy powder is globular powder, and particle diameter is distributed as 0.02～0.10mm, and the equivalent grain size of silicon carbide powder is less than 0.10mm.
Further, described step 2) in, in the compound of Al alloy powder and silicon carbide powder, the volume fraction of silicon carbide powder is 30%～70%;
Further, described step 2) in, the baking temperature of Al alloy powder, and the compound baking temperature of mixed Al alloy powder and silicon carbide powder is 100～200 ℃, preferably 120～150 ℃, be 4～24h, preferably 6～15h drying time.
Further, in described step 5), protective gas is argon gas;
Further, in described step 5), laser formation technological parameter is: laser power 100～1000W, and beam diameter 0.1～1.0mm, sweep speed 200～1000mm/s, monolayer deposition thickness 0.03～0.10mm, in argon gas, oxygen mole fraction is lower than 10
-5.
The present invention compared with prior art, has the following advantages:
1) the present invention can directly prepare the two-sided aluminium aluminium silicon carbide IGBT substrate that covers, and the substrate tissue of preparing is fine and close, and aluminium lamination is combined firmly with aluminium silicon carbide layer;
2) the present invention, to the not restriction of the shape and size of IGBT substrate, can prepare any complicated shape and large-sized two-sided aluminium aluminium silicon carbide IGBT substrate that covers;
3) moulding process of the present invention is simple to operation, secondary operations is few, utilization rate of raw materials approaches 100%, manufacturing cycle is short, production efficiency is high;
4) the present invention is except being applicable to the two-sided aluminium aluminium silicon carbide IGBT substrate that covers of preparation, is also applicable to covering without alclad or one side the preparation of aluminium aluminium silicon carbide IGBT substrate.
Accompanying drawing explanation
Fig. 1 is the laser fusion rapid molding equipment schematic diagram of aluminium silicon carbide IGBT substrate.
Fig. 2 (a) is the structure chart of the aluminium silicon carbide IGBT substrate of an embodiment of the present invention;
Fig. 2 (b) is the A-A schematic diagram of aluminium silicon carbide IGBT substrate shown in Fig. 2 (a);
Fig. 3 (a) is the structure chart of the aluminium silicon carbide IGBT substrate of another embodiment of the present invention;
Fig. 3 (b) is the A-A schematic diagram of aluminium silicon carbide IGBT substrate shown in Fig. 3 (a);
Fig. 4 (a) is the structure chart of the aluminium silicon carbide IGBT substrate of the third embodiment of the present invention;
Fig. 4 (b) is the A-A schematic diagram of aluminium silicon carbide IGBT substrate shown in Fig. 4 (a).
Description of symbols
1: optical fiber laser; 2: laser Machining head; 3: laser beam; 4: profiled member; 5: numerical control table, NC table; 6: powder shower nozzle; 7-1,7-2,7-3: powder feeder; 8: computer; 9: laser molten pool; A: aluminium silicon carbide layer; B: plane aluminium lamination; C: sphere aluminium lamination.
The specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is more specifically described in detail.
Embodiment 1:
Laser fusion quickly shaping device comprises optical fiber laser 1, laser Machining head 2, powder feeder, powder feeder one end is connected with computer 8, another termination powder shower nozzle 6 of powder feeder, laser Machining head 2 that can outgoing laser beam 3 is fixed on optical fiber laser 1, and profiled member 4 can be fixed on numerical control table, NC table.
The quantity of powder feeder can determine according to user's actual need, and three powder feeders have been shown in Fig. 1, and label is respectively 7-1,7-2,7-3.Actually in the present embodiment use two powder feeders.
With reference to Fig. 2 (a), Fig. 2 (b), four unit appearance and sizes are the two-sided aluminium aluminium silicon carbide IGBT substrate that covers of 140mm * 130mm * 5mm, welding plane thickness of aluminum alloy is not more than 0.15mm, and it is 0.27 ± 0.075mm that heat radiation sphere thickness of aluminum alloy minimum point is not more than 0.15mm, peak and minimum point difference in height.The preparation of IGBT substrate is carried out on the optical fiber laser of 1000W, and concrete steps are as follows:
(1) by four unit appearance and sizes, be to save as stl file after the three-dimensional digital-to-analogue of 140mm * 130mm * 5mm carborundum IGBT substrate is processed by Slice Software, the data message of stl file be transported in the computer of laser fusion rapid molding equipment;
(2) Al alloy powder is placed in to 120 ℃ of dry 8h in drying box, simultaneously, aluminium alloy and carborundum volume are compared for the mixed-powder of 40:60 is also placed in 120 ℃ of dry 8h in drying box, and wherein Al alloy powder particle diameter is 0.03mm, and the equivalent grain size of silicon carbide powder is 0.02mm;
(3) Al alloy powder after drying dehumidification is put into the powder feeder 7-1 of laser instrument, by mix in proportion and after drying dehumidification Al alloy powder and the compound of silicon carbide powder another powder feeder 7-2 of putting into laser fusion quickly shaping device;
(4) according to the structural requirement of IGBT substrate, plane aluminum layer thickness 0.06mm is set, aluminium silicon carbide layer thickness 4.61mm, sphere aluminium lamination minimum point thickness 0.06mm, sphere peak and minimum point thickness difference are 0.27mm, and these parameters are sent into computer 8, by determining that every layer to the type of sending powder in laser molten pool 9 to, by determining to laser molten pool 9, send Al alloy powder to, or the compound of Al alloy powder and silicon carbide powder; Thereby determine which powder feeder powder feeding is every layer used, then by the corresponding powder feeder powder feeding of computer control;
(5) plane aluminium lamination, sphere aluminium lamination and aluminium silicon carbide layer laser technical parameters are set: laser power is 500W, beam diameter 0.5mm, sweep speed 800mm/s, monolayer deposition thickness 0.06mm;
(6) adopt argon shield and control in argon gas oxygen mole fraction lower than 10
-5, operation optical fiber laser 1, according to the requirement that arranges of IGBT substrate, the corresponding powder feeder powder feeding of computer control.First open powder feeder 7-1 and send into Al alloy powder deposition plane aluminium lamination, when aluminum layer thickness reaches 0.06mm, close powder feeder 7-1; Open another powder feeder 7-2 simultaneously, send into aluminium alloy and carborundum mixed-powder deposition of aluminum silicon carbide layer, when aluminium silicon carbide layer thickness reaches 4.61mm, close another powder feeder 7-2; Then, open again powder feeder 7-1 and send into the deposition that Al alloy powder completes sphere aluminium lamination.
Employing a process for preparing the two-sided aluminium aluminium silicon carbide IGBT substrate that covers, and appearance and size is 140mm * 130mm * 5mm, plane aluminum layer thickness 0.06mm, sphere aluminium lamination minimum point thickness 0.06mm, peak thickness 0.33mm.Aluminium lamination surface quality is bright and clean, by scanning electron microscopic observation, and dense structure's pore-free crack defect, aluminium lamination and aluminium silicon carbide layer are firmly metallurgical binding.By sampling, carry out physical property detection, in the time of 20 ℃～25 ℃, thermal conductivity is 180W/mK; In the time of 25 ℃～100 ℃, thermal coefficient of expansion is 7.6 * 10
-6/ K; In the time of 20 ℃～25 ℃, bending strength 393MPa.
Embodiment 2:
With reference to Fig. 3 (a), Fig. 3 (b), six unit appearance and sizes are the two-sided aluminium aluminium silicon carbide IGBT substrate that covers of 190mm * 140mm * 5mm, welding plane thickness of aluminum alloy is not more than 0.15mm, heat radiation sphere thickness of aluminum alloy is not more than 0.15mm, and sphere layer peak and minimum point difference in height are 0.37 ± 0.075mm.The preparation of IGBT substrate is carried out on the optical fiber laser of 1000W, and concrete steps are as follows:
(1) by six unit aluminium appearance and sizes, be to save as stl file after the three-dimensional digital-to-analogue of 190mm * 140mm * 5mm carborundum IGBT substrate is processed by Slice Software, the data message of stl file be transported in the computer of laser fusion rapid molding equipment;
(2) Al alloy powder is placed in to 120 ℃ of dry 8h in drying box, simultaneously, aluminium alloy and carborundum volume are compared for the mixed-powder of 40:60 is also placed in 120 ℃ of dry 8h in drying box, and wherein Al alloy powder particle diameter is 0.03mm, and the equivalent grain size of silicon carbide powder is 0.02mm;
(3) Al alloy powder after drying dehumidification is put into the powder feeder 7-1 of laser instrument, by mix in proportion and after drying dehumidification Al alloy powder and the compound of silicon carbide powder another powder feeder 7-2 of putting into laser fusion quickly shaping device;
(4) according to the structural requirement of IGBT substrate, plane aluminum layer thickness 0.06mm is set, silicon carbide layer thickness 4.58mm, sphere aluminium lamination minimum point thickness 0.06mm, sphere peak and minimum point difference in height 0.30mm, and these parameters are sent into computer, by determining that every layer to the type of sending powder in laser molten pool 9 to, by determining to laser molten pool 9, send Al alloy powder to, or the compound of Al alloy powder and silicon carbide powder; Thereby determine which powder feeder powder feeding is every layer used, and then, by the corresponding powder feeder powder feeding of computer control, controls forming process by the control to powder feeder in real time;
(5) laser power parameter is set: laser power is 500W, beam diameter 0.5mm, sweep speed 800mm/s, monolayer deposition thickness 0.06mm;
(6) adopt argon shield and control in argon gas oxygen mole fraction lower than 10
-5operation laser instrument, according to IGBT substrate, requirement is set, first computer is opened powder feeder 7-1 and is sent into Al alloy powder deposition plane aluminium lamination, when aluminum layer thickness reaches 0.06mm, close powder feeder 7-1, open another powder feeder 7-2 simultaneously and send into aluminium alloy and carborundum mixed-powder deposition of aluminum silicon carbide layer, when aluminium silicon carbide layer thickness reaches 4.58mm, close another powder feeder 7-2; Then, open again 7-1 powder feeder and send into the deposition that Al alloy powder completes sphere aluminium lamination.
Employing a process for preparing the two-sided aluminium aluminium silicon carbide IGBT substrate that covers in Unit six, and appearance and size is 190mm * 140mm * 5mm, plane aluminum layer thickness 0.06mm, sphere aluminium lamination minimum point thickness 0.06mm, peak thickness 0.36mm.Aluminium lamination surface quality is bright and clean, by scanning electron microscopic observation, dense structure's pore-free crack defect, aluminum layer thickness evenly and be firmly metallurgical binding.By sampling, carry out physical property detection, in the time of 20 ℃～25 ℃, thermal conductivity is 178W/mK; In the time of 25 ℃～100 ℃, thermal coefficient of expansion is 7.9 * 10-6/K; In the time of 20 ℃～25 ℃, bending strength 390MPa.
Embodiment 3:
With reference to Fig. 4 (a), Fig. 4 (b), the two-sided aluminium aluminium silicon carbide IGBT substrate that covers of a complicated shape, welding plane thickness of aluminum alloy is not more than 0.15mm, and heat radiation sphere thickness of aluminum alloy is not more than 0.15mm, and peak and minimum point difference in height are 0.37 ± 0.075mm.The preparation of IGBT substrate is carried out on the optical fiber laser of 1000W, and concrete steps are as follows:
(1) save as stl file after the two-sided three-dimensional digital-to-analogue of covering aluminium silicon carbide IGBT substrate of complicated shape is processed by Slice Software, the data message of stl file is transported in the computer of laser fusion rapid molding equipment;
(2) Al alloy powder is placed in to 120 ℃ of dry 8h in drying box, simultaneously, aluminium alloy and carborundum volume are compared for the mixed-powder of 35:65 is also placed in 120 ℃ of dry 8h in drying box, and wherein Al alloy powder particle diameter is 0.04mm, and the equivalent grain size of silicon carbide powder is 0.02mm;
(3) Al alloy powder after drying dehumidification is put into the powder feeder 7-1 of laser instrument, by mix in proportion and after drying dehumidification Al alloy powder and the compound of silicon carbide powder another powder feeder 7-2 of putting into laser fusion quickly shaping device;
(4) according to the structural requirement of IGBT substrate, plane aluminum layer thickness 0.04mm is set, aluminium silicon carbide layer thickness 4.60mm, sphere aluminium lamination minimum point thickness 0.04mm, peak and minimum point difference in height 0.32mm, and these parameters are sent into computer, by determining that every layer to the type of sending powder in laser molten pool 9 to, by determining to laser molten pool 9, send Al alloy powder to, or the compound of Al alloy powder and silicon carbide powder; Thereby determine which powder feeder powder feeding is every layer used, and then, by the corresponding powder feeder powder feeding of computer control, controls forming process by the control to powder feeder in real time;
(5) laser power parameter is set: laser power is 300W, beam diameter 0.4mm, sweep speed 500mm/s, monolayer deposition thickness 0.04mm;
(6) adopt argon shield and control in argon gas oxygen mole fraction lower than 10
-5, operation laser instrument, arranges requirement according to IGBT substrate, and first computer is opened powder feeder 7-1 and is sent into Al alloy powder deposition plane aluminium lamination, when aluminum layer thickness reaches 0.04mm, closes powder feeder 7-1; Open another powder feeder 7-2 simultaneously and send into aluminium alloy and carborundum mixed-powder deposition of aluminum silicon carbide layer, when aluminium silicon carbide layer thickness reaches 4.60mm, close another powder feeder 7-2; Then, open again powder feeder 7-1 and send into the deposition that Al alloy powder completes sphere aluminium lamination.
Employing a process for preparing the two-sided aluminium aluminium silicon carbide IGBT substrate that covers, and appearance and size meets the demands, plane aluminum layer thickness 0.04mm, the minimum thickness 0.04mm of sphere aluminium lamination, the highest thickness 0.36mm.Aluminium lamination surface quality is bright and clean, by scanning electron microscopic observation, and dense structure's pore-free crack defect, aluminium lamination and aluminium silicon carbide layer are firmly metallurgical binding.By sampling, carry out physical property detection, in the time of 20 ℃～25 ℃, thermal conductivity is 182W/mK; In the time of 25 ℃～100 ℃, thermal coefficient of expansion is 7.2 * 10
-6/ K; In the time of 20 ℃～25 ℃, bending strength 398MPa.
Claims (4)
1. the two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate, is characterized in that: comprise the following steps:
1) save as stl file after the two-sided three-dimensional digital-to-analogue of covering aluminium aluminium silicon carbide IGBT substrate is processed by Slice Software, the data message of stl file is transported in the computer of laser fusion rapid molding equipment;
2) by Al alloy powder drying dehumidification, simultaneously by also drying dehumidification of the compound of the Al alloy powder mixing in proportion and silicon carbide powder;
3) Al alloy powder after drying dehumidification is put into a powder feeder of laser fusion quickly shaping device, by another powder feeder mixing in proportion and the compound of the Al alloy powder after drying dehumidification and silicon carbide powder has been put into laser fusion quickly shaping device;
4) according to the thickness requirement of IGBT substrate alclad and aluminium silicon carbide layer, determine that every layer to the type of sending powder in laser molten pool to, determine to laser molten pool and send Al alloy powder to, or the compound of Al alloy powder and silicon carbide powder; Thereby determine which powder feeder powder feeding is every layer used, then by the corresponding powder feeder powder feeding of computer control, realize the real-time control to forming process;
5) laser forming technological parameter is set, opens laser fusion rapid molding equipment, under protective gas environment, complete the deposition of plane aluminium lamination-aluminium silicon carbide layer-sphere aluminium lamination.
2. the two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate according to claim 1, it is characterized in that: described step 2), Al alloy powder is globular powder, and particle diameter is distributed as 0.02～0.10mm, and the equivalent grain size of silicon carbide powder is less than 0.10mm;
Described step 2), in, in the compound of Al alloy powder and silicon carbide powder, the volume fraction of silicon carbide powder is 30%～70%;
Described step 2) in, the baking temperature of Al alloy powder, and the baking temperature of the compound of Al alloy powder and silicon carbide powder is 100～200 ℃, be 4～24h drying time;
In described step 5), protective gas is argon gas;
In described step 5), laser formation technological parameter is: laser power 100～1000W, and beam diameter 0.1～1.0mm, sweep speed 200～1000mm/s, monolayer deposition thickness 0.03～0.10mm, in argon gas, oxygen mole fraction is lower than 10
-5.
3. according to the two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate claimed in claim 2, it is characterized in that: described step 2), the baking temperature of Al alloy powder, and the baking temperature of the compound of Al alloy powder and silicon carbide powder is 120～150 ℃, be 6～15h drying time.
4. according to the two-sided near-net-shape method that covers aluminium aluminium silicon carbide IGBT substrate claimed in claim 1, it is characterized in that: described manufacturing process is except being applicable to two-sided the covering aluminium aluminium silicon carbide IGBT substrate of preparation, be also applicable to covering without alclad or one side the preparation of aluminium aluminium silicon carbide IGBT substrate.
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| CN114334872A (en) * | 2022-03-15 | 2022-04-12 | 合肥阿基米德电子科技有限公司 | Power electronic device IGBT module with heat dissipation structure and preparation method |
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| CN114334872A (en) * | 2022-03-15 | 2022-04-12 | 合肥阿基米德电子科技有限公司 | Power electronic device IGBT module with heat dissipation structure and preparation method |
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Application publication date: 20140326 |