CN103650042A - Information recording medium, information device, and method for producing information recording medium - Google Patents

Information recording medium, information device, and method for producing information recording medium Download PDF

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Publication number
CN103650042A
CN103650042A CN201280033257.6A CN201280033257A CN103650042A CN 103650042 A CN103650042 A CN 103650042A CN 201280033257 A CN201280033257 A CN 201280033257A CN 103650042 A CN103650042 A CN 103650042A
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China
Prior art keywords
light
resonance
near field
recording
producing component
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CN201280033257.6A
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Chinese (zh)
Inventor
盐野照弘
山田升
松崎圭一
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Panasonic Intellectual Property Management Co Ltd
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Matsushita Electric Industrial Co Ltd
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Publication of CN103650042A publication Critical patent/CN103650042A/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • G11B7/24035—Recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/135—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
    • G11B7/1387—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector using the near-field effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • G11B7/24065—Layers assisting in recording or reproduction below the optical diffraction limit, e.g. non-linear optical layers or structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

This information device records or reproduces information with respect to an information recording medium. The information device is provided with a light source (14), and a near-field light generation element (9) comprising a resonance unit (22) which generates plasmon resonance between the resonance unit and a recording area (4). The resonance unit (22) generates plasmon resonance when the near-field light generation element (9) is irradiated with the light emitted from the light source. A resonance intensifying film intensifies the plasmon resonance between the resonance unit (22) and the recording area (4). The resonance unit (22) generates near-field light, and irradiates the recording area (4) with the near-field light from the recording layer side.

Description

The manufacture method of information recording carrier, massaging device and information recording carrier
Technical field
The present invention relates to the manufacture method of a kind of information recording carrier, massaging device and information recording carrier, especially relate to utilize near field (near-field light) well and to high-density recorded information information recording carrier, this information recording carrier is carried out to the manufacture method of massaging device and this information recording carrier of information recording or regeneration.
Background technology
As record and/or the massaging device of regenerating information optically, the optical memory system that the CDs such as CD (compact disk), DVD, BD (Blu-Ray dish) or light-card etc. is used as to information recording carrier is practical.
In addition, in order to realize the further high capacity of recorded information amount, proposed to utilize the near field of light that can realize the small luminous point below the diffraction of light limit to carry out the massaging device of high-density optic recording and for the information recording carrier of this massaging device.For example, the disclosed information recording carrier of patent documentation 1 has been proposed, below to utilizing the massaging device in the past of this information recording carrier to describe.
Figure 33 means the near field of light producing component of massaging device in the past and the stereographic map of information recording carrier.In the information recording carrier in the past 103 shown in Figure 33, be fully less than the wavelength of recording light 105 size (about 3 to 30nm) a plurality of posting fields 104 regularly 2 dimension be arranged on substrate 101.Posting field 104 adopts GeTe-Sb 2te 3such phase-change recording material.In addition, the arrangement cycle of the directions X in figure, the posting field of Y-direction 104 represents with Λ x, Λ y respectively, the height of posting field 104 represents with h, and the size (amplitude) of the posting field 104 of Y-direction represents with w, and the interval between posting field 104 represents with s.Λ x, Λ y, w and s are than the abundant little size of recording wavelength, Λ y=w+s below the diffraction of light limit.
Near field of light producing component 109 is parallel to the configuration plane (XY face) of posting field 104 and configures, the longer direction that makes 3 angular shape metal films is Y-direction, and approach posting field 104 and configure, make operating distance WD is tens of nm left and right from this configuration plane.
Easily the recording light 105 of the straight line polarization (polarization direction 108) of the Y-direction of generation plasma resonance is irradiated near field of light producing components 109.Its result, metallic film inside surface plasma resonance near field of light producing component 109 is excited, and near top ends (summit of the 3 angular shapes) generation (near field of light is not shown) of near field of light producing component 109, compares the near field of light (near field of light with the polarization direction parallel with polarization direction 108) that electric field intensity significantly increases with incident light.
By allowing the near field of light producing irradiate the posting field 104 that approaches configuration, posting field 104 undergo phase transition (from crystallization to noncrystalline or from noncrystalline to crystallization), can take a posting field as least unit recorded information.
Yet, above-mentioned massaging device in the past, when the posting field 104 further densification of information recording carrier 103, existence is the problem of recorded information well.
Conventional art document
Patent documentation
Patent documentation 1: No. 2010/116707th, International Patent Publication communique.
Summary of the invention
The object of the present invention is to provide a kind of near field of light of utilizing to the posting field of arranging the to high-density manufacture method of information recording carrier, massaging device and the information recording carrier of recorded information well.
The information recording carrier that an aspect of of the present present invention is related, comprising: substrate; The posting field that comprises recording materials is the recording layer that island is arranged; Be formed between described substrate and described recording layer, for strengthening the 1st resonance of plasma resonance, strengthen film, wherein, the symbol of the real part that described the 1st resonance enhancing film comprises dielectric constant is negative material.
The related massaging device of other aspects of the present invention is above-mentioned information recording carrier to be carried out to the massaging device of recording of information or regeneration, comprising: light source; Have and described posting field between produce the near field of light producing component of the resonance part of plasma resonance, wherein, described resonance part is mapped to described near field of light producing component by the ejaculation illumination from described light source, produce plasma resonance, described the 1st resonance strengthens film strengthens the plasma resonance between described resonance part and described posting field, and described resonance part produces near field of light and described near field of light is irradiated to described posting field from described recording layer side.
The manufacture method of the information recording carrier that other aspect of the present invention is related, the information recording carrier for the manufacture of possessing substrate, comprising: form the step that the posting field that comprises recording materials is the recording layer of island arrangement; The 1st resonance that is formed for strengthening plasma resonance between described substrate and described recording layer strengthens the step of film, and wherein, the symbol that described the 1st resonance strengthens the real part that film comprises dielectric constant is negative material.
According to above-mentioned structure, utilize near field of light, the posting field that can arrange high density is recorded information well.
Object of the present invention, feature and advantage will be more remarkable by following detailed description and accompanying drawing.
Accompanying drawing explanation
Fig. 1 means the synoptic diagram of the present invention's the 1st massaging device of embodiment and the structure of information recording carrier.
Fig. 2 is for the near field of light producing component of massaging device and the key diagram of the state during to information recording carrier record or regenerating information of the present invention the 1st embodiment are described.
Fig. 3 means the cut-open view of the III-III line along Fig. 2 of the state while producing near field of light between the near field of light producing component of the massaging device of the present invention the 1st embodiment and the posting field of information recording carrier.
Fig. 4 means the cut-open view of the IV-IV line along Figure 33 of state when massaging device in the past produces near field of light between near field of light producing component and the posting field of information recording carrier.
The cut-open view of the state while producing near field of light when Fig. 5 means the further densification of information recording carrier shown in Fig. 4 between the posting field of information recording carrier and near field of light producing component.
Fig. 6 means the schematic diagram of structure of massaging device of the variation of the present invention the 1st embodiment.
Fig. 7 means the schematic diagram of structure of massaging device of other variation of the present invention the 1st embodiment.
Fig. 8 means the schematic diagram of an example of the information recording carrier of the posting field that comprises cone shape.
Fig. 9 means that the head portion that is included in cylinder has the schematic diagram of an example of the information recording carrier of the posting field of justifying into hemispheric shape.
Figure 10 means the structure of information recording carrier and the key diagram of the state during to information recording carrier record or regenerating information of the present invention the 2nd embodiment.
Figure 11 means the cut-open view of structure of information recording carrier of the variation of the present invention the 2nd embodiment.
Figure 12 means the cut-open view of structure of information recording carrier of other variation of the present invention the 2nd embodiment.
Figure 13 means the cut-open view of structure of information recording carrier of other variation of the present invention the 2nd embodiment.
Figure 14 means the structure of information recording carrier and the key diagram of the state during to information recording carrier record or regenerating information of the present invention the 3rd embodiment.
Figure 15 means the cut-open view of structure of information recording carrier of the variation of the present invention the 3rd embodiment.
Figure 16 means the cut-open view of structure of information recording carrier of other variation of the present invention the 3rd embodiment.
Figure 17 means the cut-open view of structure of information recording carrier of other variation of the present invention the 3rd embodiment.
Figure 18 means the cut-open view of structure of information recording carrier of other variation of the present invention the 3rd embodiment.
Figure 19 means structure and the key diagram to the state of information recording carrier record or regenerating information of the information recording carrier of the present invention the 4th embodiment.
Figure 20 means the cut-open view of structure of information recording carrier of the variation of the present invention the 4th embodiment.
Figure 21 means the cut-open view of information recording carrier structure of other variation of the present invention the 4th embodiment.
Figure 22 means the schematic diagram of the present invention's the 5th massaging device of embodiment and the structure of information recording carrier.
Figure 23 means the near field of light producing component of massaging device and the key diagram of the state during to information recording carrier record or regenerating information of the present invention the 5th embodiment.
Figure 24 means that the state that produces in the near field of light producing component of the massaging device of the present invention the 5th embodiment and the near field of light between the posting field of information recording carrier is along the cut-open view of the XXIV-XXIV line of Figure 23.
Figure 25 means near field of light producing component and double-wavelength light source and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 6th embodiment.
Figure 26 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of massaging device of the variation of the present invention the 6th embodiment.
Figure 27 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 7th embodiment.
Figure 28 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device in the present invention the 8th embodiment.
Figure 29 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of massaging device of the variation of the present invention the 8th embodiment.
Figure 30 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 9th embodiment.
Figure 31 means the near field of light producing component of massaging device and light source and the key diagram to the state of information recording carrier record or regenerating information of the variation of the present invention the 9th embodiment.
Figure 32 means the schematic diagram of the present invention's the 10th massaging device of embodiment and the structure of information recording carrier.
Figure 33 means the near field of light producing component of massaging device in the past and the stereographic map of information recording carrier.
Embodiment
Below, with reference to accompanying drawing, embodiments of the invention are described.And following embodiment is the example that the present invention is specialized, the technical scope being not intended to limit the present invention.
(the 1st embodiment)
First, massaging device and information recording carrier to the present invention the 1st embodiment, adopt coordinate system as shown in the figure, utilizes Fig. 1 to Fig. 9 to be elaborated.
Fig. 1 means the synoptic diagram of the present invention's the 1st massaging device of embodiment and the structure of information recording carrier.Fig. 2 is for the near field of light producing component of massaging device and the key diagram of the state during to information recording carrier record or regenerating information of the present invention the 1st embodiment are described.Fig. 3 means the cut-open view of the III-III line along Fig. 2 of the state while producing near field of light between the near field of light producing component of the massaging device of the present invention the 1st embodiment and the posting field of information recording carrier.
The massaging device of the present embodiment is to adopt to utilize surface plasma resonance (following, referred to as " plasma resonance ") the near field of light massaging device that carries out recording of information or regeneration, comprising: near field of light producing component 9, object lens 10, collimation lens 11, light source 14, beam splitter 15, detect lens 16, photodetector 17a, 17b, servosignal and detect with optical element 19, reproducing unit 24 and drive division 25.Information recording carrier 3 comprises substrate 1 and have the recording layer 2 of a plurality of posting fields 4 that can record of arranging with island on substrate 1.Posting field 4 for example consists of the particulate that comprises recording materials.
At this, the problem of the newfound massaging device in the past of inventor of the present invention is described.Fig. 4 means the cut-open view of the IV-IV line along Figure 33 of state when massaging device in the past produces near field of light between near field of light producing component and the posting field of information recording carrier.The cut-open view of the state while producing near field of light when Fig. 5 means the further densification of information recording carrier shown in Fig. 4 between the posting field of information recording carrier and near field of light producing component.
In the information recording carrier 103 shown in Fig. 4, the interval s between posting field 104 is greater than the size w of posting field 104, i.e. w < s.On the other hand, in the information recording carrier 103 ' of the densification shown in Fig. 5, the interval s ' between posting field 104 below the size w of posting field 104, i.e. w >=s '.Therefore, because the arrangement periods lambda y ' of the posting field 104 of the information recording carrier 103 ' of the densification shown in Fig. 5 is less than the arrangement periods lambda y of the posting field 104 of the information recording carrier 103 shown in Fig. 4, therefore, information recording carrier 103 ' can make recorded information heaped capacity.
At this, near field of light producing component 109 is parallel to the configuration plane (XY face) of posting field 104 and configures, what make 3 angular shape metal films is Y-direction compared with length direction (longitudinal direction), and approach posting field 104 and configure, make operating distance WD is tens of nm left and right from this configuration plane.
Now, easily produce the recording light 105 irradiation near field of light producing components 109 of the straight line polarization (polarization direction 108) of the Y-direction of plasma resonance.Its result, metallic film inside surface plasma resonance near field of light producing component 109 is excited, and near leading section (summit of the 3 angular shapes) generation (near field of light is not shown) of near field of light producing component 109, compares the near field of light 107a (near field of light with the polarization direction parallel with polarization direction 108 127) that electric field intensity significantly increases with incident light.
By allowing the near field of light 107a producing irradiate the posting field 104a that approaches configuration, posting field 104a undergo phase transition (from crystallization to noncrystalline or from noncrystalline to crystallization), can take a posting field as least unit recorded information.
As mentioned above, near field of light producing component 109 is parallel to the configuration plane (XY face) of posting field 104 and configures (with respect to the so-called landscape configuration of posting field 104), and the recording light 105 with the polarization direction (polarization direction 108) of the Y-direction parallel with an orientation of posting field 104 is irradiated near field of light producing component 109.Now, produce near field of light 107a, this near field of light 107a has the polarization direction 127 of the Y-direction identical with the polarization direction of recording light 105, and the phase-change recording of posting field 104 is carried out.In addition, although also produce the near field of light with the polarization beyond Y-direction,, the ratio of near field of light 107a that is created in the Y-direction polarization identical with recording light 105 is very many.
At this, each posting field 104 is island and isolates in face, separated from one another at XY face.In this case, if be irradiated to the posting field 104a of record object at the near field of light 107a of Y-direction polarization, as shown in Figure 4, from the side of irradiated posting field 104a, edge ± polarization direction (± Y-direction) subsidiary produces near field of light 107b1, the 107b2 having with the essentially identical big or small nW of big or small w of posting field 104.
If described in detail, being near field of light 107b1,107b2 exists with the mode part of each side around posting field 104a, along with reducing gradually away from its intensity of side.For example, the strength decreased of near field of light 107b1,107b2 is to the 1/e of maximum intensity 2distance be nw.
Although the interval s between the posting field 104 shown in Fig. 4 is fully less than the wavelength of recording light 105, larger than the diffusion length nw of near field of light 107b1,107b2.That is,, as shown in the example of Fig. 4, when the such lower density of nw < s, near field of light 107b1,107b2 are difficult to affect adjacent posting field 104b, 104c.
On the other hand, the interval s ' between the posting field 104 shown in Fig. 5 is not only fully less than the wavelength of recording light 105, but also is less than the diffusion length nw of near field of light 107b1,107b2.; inventor of the present invention finds; as shown in the example of Fig. 5; when becoming the high density of nw >=s; near field of light 107b1, the 107b2 producing from the side of irradiated posting field 104a brings harmful effect to each adjacent posting field 104b, 104c and produces cross light, the new problem that existence can not only be recorded at target record region 104a well.
That is, owing to producing above-mentioned cross light, therefore likely adjacent posting field 104b, 104c are recorded mistakenly or deleted, existence can not be to the information recording carrier 103 ' of the densification problem of recorded information well.
The present embodiment is in order to solve the problem of the massaging device in the past that comprises the problems referred to above, to adopt following structure., the massaging device of the present embodiment is optical information recording/reproducing device, possess light source 14 and there is the near field of light producing component 9 that produces the resonance part 22 of plasma resonance between the posting field 4 of recording layer 2, make resonance part 22 approach posting field 4 and configure, irradiation light 5 from light source 14 is irradiated to near field of light producing component 9, at least a portion of the near field of light 7 that utilization is produced by resonance part 22 is in posting field 4 recorded informations, light source 14 is configured, make configuration plane (XY face) near field of light 7 with respect to posting field 4 in the vertical direction the amplitude of the polarized light component of (Z direction) be greater than in the horizontal direction the amplitude of the polarized light component of (direction of Y).
And the massaging device of the present embodiment possesses photodetector 17a, by photodetector 17a, detect the reflected light 6 near field of light producing component 9.The detection signal of reproducing unit 24 based on from photodetector 17a judgement posting field 4 is in recording status or in recording status not, regenerative recording is in the information of posting field 4.
In addition, the optical information recorder renovation process of the present embodiment is the optical information recorder renovation process that possesses the information recording carrier 3 of substrate 1 and recording layer 2, wherein, recording layer 2 has the recordable recording region 4 that island is arranged on substrate 1, the method comprises: utilize light source 14 and have the near field of light producing component 9 that produces the resonance part 22 of plasma resonance between the posting field 4 of recording layer 2, make resonance part 22 approach posting field 4 and the step of configuration; Irradiation light 5 from light source 14 is irradiated to the step of near field of light producing component 9; At least a portion of the near field of light 7 that utilization is produced by resonance part 22 is in the step of posting field 4 recorded informations; Configuration light source 14 makes the amplitude of configuration plane (XY face) near field of light 7 polarized light component in the vertical direction with respect to posting field 4 be greater than the step of the amplitude of polarized light component in the horizontal direction.
In addition, as described later, get the configuration step for above-mentioned light source 14, also can adopt following steps, utilize the polarization controlling optical element that changes the polarization state that irradiates light 5, make the configuration plane (XY face) with respect to posting field 4, the amplitude of near field of light 7 polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction.
Optical information recorder renovation process also comprises: utilize photodetector 17a and by photodetector 17a, detect the step of reflected light 6 near field of light producing component 9 light that sees through of near field of light producing component 9 (or see through); Detection signal based on from photodetector 17a judgement posting field 4 is in recording status or in recording status not, regenerative recording is in the step of the information of posting field 4.
The information recording carrier 3 of the present embodiment at least comprises substrate 1 and recording layer 2, and it is highly that h, width (diameter) are the cylindrical shape of w that the posting field 4 of recording layer 2 is, and is island and is arranged on substrate 1.Part or all of each posting field 4 comprises recording materials, posting field 4 or in recording status or in recording status not.Posting field 4 with in the past to record mark corresponding, there is recorded information.
In Fig. 2, posting field 4a is expressed as recording status, posting field 4b is expressed as not recording status, as the size from the wavelength of the recording light of light source 14 or the irradiation light 5 of reproduced light is for example fully less than, and about 3 to 30nm posting field 4 is by 2 dimension arrangements regularly.Posting field 4 represents with Λ x, Λ y respectively in the arrangement cycle of directions X, Y-direction, and posting field 4 is w in the size (amplitude) of Y-direction, and the interval s ' between posting field 4 represents.Λ x, Λ y, w and s ' are the sizes that is fully less than the record regenerating wavelength below the diffraction of light limit, Λ y=w+s.In addition, in the present embodiment, the interval between the arrangement cycle of directions X, the size of posting field 4, posting field 4 is identical with Y-direction respectively, but is not particularly limited to this example, also can be different.
The information recording carrier 3 of the present embodiment adopts the size w of interval s ' between posting fields 4 and posting field 4 basic identical or be less than the structure of densification of s≤w of the size w of posting field 4, but can be also the structure of s > w.In addition, in Fig. 2, all posting fields 4 are all arranged regularly, but are not necessary, can change arrangement pitch or arrangement mode according to the information that will record.In addition,, by changing variedly arrangement pitch or arrangement mode, can also comprise the positional information of posting field 4 etc.
Then, the massaging device of the present embodiment is elaborated.Massaging device shown in Fig. 1 possesses the light source 14 that semiconductor laser light resource is used as record regenerating.From light source 14 till dispose collimation lens 11, beam splitter 15, object lens 10 and near field of light producing component 9 light path of information recording carrier 3.From beam splitter 15 till dispose servosignal the light path on photodetector 17a, 17b Fan road, detecting use optical element 19 and detection lens 16.
The resonance part 22 of the front end area of near field of light producing component 9 and posting field 4 are for example separated by about 100nm, preferably in about 3 to 30nm distance configuration close to each other.Its result, can be irradiated to posting field 4 from resonance part 22 because of the near field of light 7a that plasma resonance produces.
The laser (the ejaculation light of recording light) 12 at Z-direction straight line polarization (polarization direction is 8 ") penetrating from light source 14 along Y direction, becomes almost parallel light 13 (polarization direction is 8 ') by collimation lens 11, sees through beam splitter 15.Object lens 10 by irradiate light 5 centered by near the resonance part 22 of front end optically focused near field of light producing component 9.Now, irradiating the polarization direction of light 5 on optical axis is by 8 directions that represent.In addition, irradiation light 5 also can be irradiated to the posting field 4 in the region that approaches resonance part 22 etc.
Object lens 10 are collector lenses of so-called abaxile.If the optical axis almost parallel light 13 parallel with Y direction is injected object lens 10, optical axis at YZ face from the irradiation light 5 of Y-axis Z-direction tilt angle theta by optically focused to resonance part 22.By using the object lens 10 of abaxile, can prevent contacting of object lens 10 and information recording carrier 3, have easily near the resonance part 22 of near field of light producing component 9 from the effect of the horizontal light-concentrating of inclination.
In addition, in the present embodiment, the recording light and the reproduced light that from light source 14, penetrate are to be irradiated near field of light producing component 9 by object lens 10, but are not particularly limited to this example.The recording light or the reproduced light that from light source 14, penetrate also can for example, be irradiated near field of light producing component 9 by optical waveguide or optical fiber etc.
Near field of light producing component 9 forms by take the metal that Ag or Au etc. are principal ingredient, as shown in Figure 2, is 3 corner post shapes of its front end point.The collocation method of near field of light producing component 9 is, in the resonance part 22 that makes front end, approaches under the state of posting field 4 of recording layer 2, and with respect to posting field 4, be so-called longitudinal configuration, but near field of light producing component 9 configure with respect to ZX face tilt angle θ 1.
In addition, near field of light producing component 9 is except 3 above-mentioned angular shapes, so long as front end point easily produces the shape of plasma resonance, whole shape can be carried out various changes.In addition, the wavelength that the material of near field of light producing component 9 is preferably used in conjunction with is selected, to can produce plasma resonance or strengthen this plasma resonance with recording materials, when hope when being reduced in the dielectric absorption (absorption) of near field of light producing component 9 from visible region to infrared spectral range, compare with Au that certainly to take the material that Ag is principal ingredient comparatively desirable.For example, by utilizing other material doped AgPdCu, the AgBi to Ag such as Pd, the Cu of several % to 0. number % left and right, Bi, AgGaCu etc., can form low absorption, corrosion resistant near field of light producing component 9.In addition, even if adopt, take the material that Cu is principal ingredient and also there is the effect that reduces dielectric absorption.
Plasma resonance element 9 preferably has par, in the present embodiment, establishes θ ≈ θ 1, so that the par of 3 dihedrals that near field of light producing component 9 has is substantially vertical with the optical axis that irradiates light 5.Its result because the irradiation light 5 of the par of directive near field of light producing component 9 can be reflected with essentially identical angle inversely as reflected light 6, the light utilization ratio that detects for regenerated signal or servosignal increase, therefore preferably.In addition,, in order par near field of light producing component 9 to irradiate light 5 and to take out well reflected light 6, the area that near field of light producing component 9 preferably has a par is for for example 1000 to several 10000nm 2left and right or than its larger par.
By irradiating the irradiation of light 5, the electronics being present near field of light producing component 9 interacts with irradiating light 5, excites (surface) plasma resonance, follows resonance part 22 in front end area in this to produce near field of light 7a.Now, at least a portion of near field of light 7a is irradiated to the posting field 4 that approaches resonance part 22, and the optical characteristics such as the refractive index of posting field 4 or attenuation coefficient change, thereby information is recorded.
Reverse the turning back by object lens 10 of reflected light 6 of being reflected by near field of light producing component 9 in addition.The optical axis that has passed through the reflected light 6 of object lens 10 is bent towards Z-direction by beam splitter 15, injects servosignal and detects with optical element 19.Reflected light 6 by servosignal detect with optical element 19 at least difference be 2 bundle light, then by detection lens 16, by difference, be 2 kinds and converge light 18a, 18b.Converge light 18b and inject photodetector 17b, the servosignal while recording is detected.
The massaging device of the present embodiment possesses makes near field of light producing component 9 and object lens 10 mobile drive division 25 integratedly.Drive division 25 moves near field of light producing component 9 by the servosignal based on from photodetector 17b, the small position control at the interval that comprises plasma resonance element 9 and recording layer 2 etc.
At this, for the plasma resonance that near field of light is produced, the polarization direction of irradiating light 5 is very important, known, irradiate the polarization direction 8 of light 5 more approaching be parallel to exist electronics near field of light producing component 9 compared with length direction (longitudinal direction), more can produce preferably plasma resonance, produce strong near field of light.Therefore, the θ=θ 1 that is configured to of the near field of light producing component 9 of Fig. 1 is advisable.In addition, though θ 1=0 or θ ≠ θ 1, as long as just can produce plasma resonance at the polarized light component compared with length direction existence irradiation light 5 of near field of light producing component 9.
Therefore, in the massaging device of the present embodiment shown in Fig. 1, in order to produce near field of light 7a from resonance part 22 by plasma resonance, light source 14 is configured, make on the optical axis of irradiation light 5 that irradiates near field of light producing component 9, with respect to the configuration plane (XY face) of posting field 4 polarization direction that the amplitude of the polarized light component of (Z-direction) is greater than other the in the vertical direction amplitude of the polarized light component of horizontal direction (Y direction) for example.For example, to configure light source 14, the irradiation light 5 that makes to have a straight line polarization in Z-direction is emitted as suitable along Y direction in the mode of 45 ° of 0 °≤θ <.
In the present embodiment, establish θ=10～30 °, how much there are some inclination compositions (0 ° of θ >).By such configuration light source 14, the near field of light 7a producing from resonance part 22 with respect to the configuration plane (XY face) of posting field 4 in the vertical direction the amplitude of the polarized light component of (Z direction) be greater than in the horizontal direction the amplitude of the polarized light component of (direction of Y).In Fig. 3, the polarization direction of near field of light 7a represents with 27, with the polarization direction 8 of irradiating light 5 be equidirectional.In addition, although also produce the near field of light different with the polarization direction of irradiating light 5,, ratio is few, and the near field of light 7a with the polarization direction identical with irradiation light 5 of take is main flow.
Its result, as shown in Figure 3, the generation direction of near field of light 7b1, the 7b2 supervening from the posting field 4a being irradiated by near field of light 7a is parallel with the polarization direction 27 that near field of light 7a is had.That is, become the vertical direction ± Z direction in figure, even the structure of the densification of s≤w, being also difficult to affects adjacent posting field 4b, 4c, thereby can suppress the deterioration that the cross light when recording causes.In addition, preferably, s ' compares less with w, and the polarization direction of near field of light 7a is with respect to the configuration plane (XY face) more approaching vertical (Z direction) of posting field 4.But, so long as that the near field of light 7b1, the 7b2 that make to supervene at posting field 4a are difficult to have influence on the configuration of adjacent posting field 4b, 4c is just no problem, for example, when angle θ is during in 45 ° of scopes of 0 °≤θ <, just there is the effect of abundant reduction cross light.
In addition, also in can the light path between light source 14 and object lens 10, the ejaculation light 12 that change is penetrated from light source 14 or the polarization state of directional light 13, for example, the polarization controlling optical element that configuration such as wavelength plate is such, by above-mentioned polarization controlling optical element, can make configuration plane (XY face) with respect to above-mentioned posting field 4 in the vertical direction the amplitude of the above-mentioned ejaculation light 12 of (Z-direction) polarization or the polarized light component of directional light 13 be greater than the amplitude of composition of the polarization direction (Y direction) of horizontal composition.
Fig. 6 means the schematic diagram of structure of massaging device of the variation of the present invention the 1st embodiment.The difference of the massaging device shown in the massaging device shown in Fig. 6 and Fig. 1 is, between collimation lens 11 and beam splitter 15, configures polarization controlling optical element 30, and light source 14 ' penetrates the laser 12 at X-direction straight line polarization (polarization direction is 8 ").; massaging device shown in Fig. 6 also possesses the polarization controlling optical element 30 that changes the polarization state that irradiates light 5; the polarization direction that polarization controlling optical element 30 changes from the laser 12 of light source 14 '; make the configuration plane (XY face) with respect to posting field 4, the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude of the polarized light component of (Y-direction).
Particularly, as polarization controlling optical element 30, use 1/2 Bo Long plate equiwavelength plate, when the polarization direction of the ejaculation light 12 from light source 14 ' is X-direction, in light path between collimation lens 11 and beam splitter 15, configure polarization controlling optical element 30, make to become towards the polarization direction of the irradiation light 5 of near field of light producing component 9 from the straight line polarization direction (polarization direction 8) of Z direction cant angle theta or become the elliptically polarized light that to take from the direction of Z direction cant angle theta be major axis.
According to above-mentioned configuration, in the present embodiment, also identical with the massaging device shown in Fig. 1, the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z-direction) is greater than in the horizontal direction the amplitude of the polarized light component of (Y direction), thereby can suppress the deterioration that the cross light when recording causes.
In addition, replace photodetector 17a, also can detect the light that sees through through near field of light producing component 9.Fig. 7 means the schematic diagram of structure of massaging device of other variation of the present invention the 1st embodiment.In addition, in the present embodiment, except seeing through light 18a ' regenerative recording by detection the structure of the information of posting field 4, other structure is identical with the structure of the massaging device shown in Fig. 1, therefore omits detailed explanation.
The difference of the massaging device shown in the massaging device shown in Fig. 7 and Fig. 1 is, replace photodetector 17a, that uses photodetector 17a ' to detect to see through near field of light producing component 9 sees through light 18a ', in the massaging device shown in Fig. 1, detection is from the reflected light 6 of near field of light producing component 9, and detects and see through light 18a ' near field of light producing component 9 at the massaging device shown in Fig. 7.
Photodetector 17a ' is configured in a side contrary with object lens 10 of near field of light producing component 9, and what detect to see through near field of light producing component 9 sees through light 18a '.The detection signal of reproducing unit 24 based on from photodetector 17a ' judgement posting field 4 is in recording status or in recording status not, regenerative recording is in the information of posting field 4.
Particularly, seeing through light quantity changes according to the degree of the plasma resonance between the resonance part 22 of near field of light producing component 9 and the posting field in recording status 4 or the posting field 4 in recording status not.For example, when the degree of the plasma resonance between the resonance part 22 of near field of light producing component 9 and the posting field in recording status 4 or the posting field 4 in recording status is not large, the variation that sees through light quantity increases.
In addition, consider that the dielectric absorption in plasma resonance element 9 (absorption) increases if the plasma resonance between near field of light producing component 9 and posting field 4 strengthens, generally, from reducing through light quantity of plasma resonance element 9.
So, by utilizing photodetector 17a ' detect to see through light 18a ', the detection signal judgement posting field 4 based on from photodetector 17a ' is in recording status or in recording status not, can regenerative recording in the information of posting field 4.
According to above-mentioned structure, in the present embodiment, also identical with the massaging device shown in Fig. 1, the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z-direction) is greater than in the horizontal direction the amplitude of the polarized light component of (Y direction), thereby can suppress the harmful effect that the cross light when recording causes.
In addition, in the present embodiment, photodetector 17a ' configures near the contrary face of light incident side face of near field of light producing component 9, but, be not particularly limited to this example, also can there be various changes, for example, in the position of leaving near field of light producing component 9, photodetector 17a ' be set, between near field of light producing component 9 and photodetector 17a ', arrange the photoconduction that sees through near field of light producing component 9 to the lens of photodetector 17a ' etc.
In addition, configuration plane (XY face) cant angle theta with respect to posting field 4 compared with length direction of the near field of light producing component 9 of the present embodiment, the collocation method of near field of light producing component 9 is so-called longitudinal configurations, but compare with the configuration mode of near field of light producing component 9, between resonance part 22 and posting field 4, produce plasma resonance, the polarization direction of the near field of light 7a producing from resonance part 22 is more important.; due to the near field of light 7a producing from resonance part 22; with respect to the configuration plane (XY face) of posting field 4 in the vertical direction the amplitude of the polarized light component of (Z direction) be greater than in the horizontal direction the amplitude of the polarized light component of (direction of Y); therefore; as a result of; can make the near field of light 7b1, the 7b2 that from posting field 4, produce not affect adjacent posting field 4b, 4c, thereby can obtain the effect that can reduce cross light etc.For example, even by the main part of near field of light producing component 9 with respect to the configuration plane (XY face) of posting field 4 landscape configuration substantially in parallel, as long as each element of combination makes the region of resonance part 22 for longitudinally configuration, meet above-mentioned condition, just can obtain the effect same with the present embodiment.
Then, to describing from information recording carrier 3 regenerating informations.Because the size of posting field 4 is fully little with respect to regeneration wavelength, therefore, even become the big or small degree of posting field 4 to be irradiated to posting field 4 near field of light 7a optically focused, the light quantity of the scattered light returning is also very little.For example, the posting field in w=20nm left and right, the light quantity of the scattered light returning is for example 0.001% left and right with respect to the light quantity of the near field of light of irradiating.In addition, if it is low that reproduced light is transformed to the efficiency of near field of light, estimate to only have at most 1%, the light quantity of the above-mentioned scattered light returning is 1% left and right of above-mentioned value with respect to the light quantity of reproduced light, that is, and at most in 0.00001% left and right.Therefore, the known reproduction ratio that carries out information from the method for the scattered light of posting field 4 with detection is more difficult.
At this, inventor of the present invention finds, when resonance part 22 and posting field 4 interactions, posting field 4, when the enhancing degree of recording status and plasma resonance under recording status is not different, changes from the reflected light 6 of near field of light producing component 9 or the light quantity that sees through light 18a ' that sees through near field of light producing component 9.; think if the plasma resonance between near field of light producing component 9 and posting field 4 strengthens; the dielectric absorption near field of light producing component 9 (absorption) increases, and its result, from the reflection light quantity of near field of light producing component 9 or see through light quantity and change.According to the design of near field of light producing component 9, when plasma resonance strengthens, reflection light quantity likely increases also and likely reduces, and for the variation that sees through light quantity, generally the degree of plasma resonance more reduces through light quantity.
Particularly, even if posting field 4 is of a size of the size below diffraction limit, also because posting field 4 is at recording status or not under recording status, can make the degree of its resonance change, therefore, can utilize photodetector 17a or photodetector 17a ' detection of reflected light 6 or see through light 18a ', be in recording status or in recording status not, thereby regenerative recording is in the information of posting field 4 based on this detection signal judgement posting field 4.
In addition,, because the size of near field of light producing component 9 is not subject to the restriction in space, therefore can make near field of light producing component 9 larger than posting field 4.Further, because not being detects near field of light but reproduced light is shone directly near field of light producing component 9 to detect from the reflected light of near field of light producing component 9 or through light, so, can make reflection light quantity, through the light quantity of light quantity, reflection light quantity, change or see through the light quantity variation increase fully of light quantity, thereby can improve the degree of modulation of regenerated signal.
And, from the reflected light of near field of light producing component 9 or the polarization state that sees through polarisation of light angle etc., sometimes also along with the degree of plasma resonance, change.In this case, because the light quantity that can change reflected light by optical element such as combination analyzer etc. or see through light changes, therefore by detecting the ejaculation light from optical elements such as analyzers, similarly regenerating information with photodetector.
Part or all of posting field 4 comprises recording materials, and in order to strengthen plasma resonance, these recording materials preferably have metalline, and particularly, the symbol of the real part of the dielectric constant of recording materials (dielectric constant) is preferably negative.And, if the real part of the relative dielectric constant of recording materials (relative dielectric constant) below-5, the degree of plasma resonance increases, therefore more suitable.For example, the actual metal of take describes as example, if reproduced light is in the scope from visible ray to infrared light, when metal is Au, wavelength is more than 0.54 μ m, during for Ag, wavelength is more than 0.44 μ m, during for Cu wavelength more than 0.506 μ m, separately than dielectric constant real part below-5.Its result, the degree of plasma resonance strengthens in above-mentioned scope, and the value of the real part that other recording materials also can be by relative dielectric constant judges the probable ranges of resonance degree.
For example, if the recording materials of posting field 4 are at recording status and do not represent metalline during one of them state of recording status, and when another state, represent nonmetal character, and comparing with the latter, the former is from the reflection light quantity of near field of light producing component 9 or to see through the variation of light quantity large.Therefore, by recording materials recording status under the real part of dielectric constant and the real part of dielectric constant under recording status not compare, when the state of a less side's above-mentioned recording materials, reflection light quantity or see through light quantity and change.Its result, the degree of modulation of regeneration increases, and can expect good regeneration.
; part or all of the posting field 4 of recording layer 2 comprises recording materials; as long as with respect to regeneration light wavelength, the symbol of the real part of the symbol of real part of the dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials dielectric constant under recording status is not differed from one another.Therefore, the information recording carrier 3 using as present embodiment, preferably use such information recording carrier, this information recording carrier at least possesses substrate 1 and recording layer 2, the posting field 4 of above-mentioned recording layer 2 is island and arranges, part or all of above-mentioned posting field 4 comprises recording materials, in regeneration, makes during light wavelength the symbol of the real part of the real part symbol of the dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials dielectric constant under recording status not differ from one another.
And, if when regeneration light wavelength, a wherein side of the real part of the real part of the relative dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials relative dielectric constant under recording status is not below-5, the opposing party ratio-5 are large, the degree of this side's plasma resonance strengthens, and has the effect of the degree of modulation of further improvement regeneration.Therefore, the information recording carrier 3 using as present embodiment, preferably use such information recording carrier, this information recording carrier at least possesses substrate 1 and recording layer 2, the posting field 4 of above-mentioned recording layer 2 is island and arranges, part or all of above-mentioned posting field 4 comprises recording materials, when regeneration light wavelength, a wherein side of the real part of the real part that makes the relative dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials relative dielectric constant under recording status is not below-5, and the opposing party ratio-5 are large.
As above-mentioned recording materials, known have photochromic (Photochromic) material, organic pigments etc. such as the inorganic material such as phase-change recording material, bismuth oxide or titanium dioxide, diarylethene (Diarylethene).No matter be which kind of recording materials, as long as meet above-mentioned condition when regeneration light wavelength, just can increase the degree of modulation of regeneration.
In the present embodiment, as the principal ingredient of recording materials, for example, adopt the ratio with 2: 1 to comprise GeTe and Sb 2te 3ge 2sb 2te 5such GeTe-Sb 2te 3the sulfide-based phase-change recording material of system, recording status is corresponding with crystallization (crystal), and recording status is not corresponding with noncrystalline (amorphous), but can be conversely yet.And principal ingredient refers to the material composition of the volume ratio maximum that forms posting field 4, if volume ratio is more than 50%, because of the degree of modulation increase of regeneration, therefore more suitable.
In general, if phase-change recording material is crystallization, different according to the different wavelength range forming, but in a certain wavelength field, there is the feature that represents metalline.
For example,, at the Ge of typical phase change material 2sb 2te 5situation under, as the wavelength X of reproduced light that is suitable for the semiconductor laser of light source 14, for example to meet, 0.35 μ m≤λ≤0.45 μ m is advisable.In addition, when the wavelength X of the reproduced light of livid purple look semiconductor laser is 0.41 μ m, as the real part of the relative dielectric constant of the recording materials of crystallization, be-8.7, as the real part of the relative dielectric constant of amorphous recording materials, be 0.57.Now, because meet real part as the relative dielectric constant of the recording materials of crystallization below-5, the condition that is greater than-5 as the real part of the relative dielectric constant of amorphous recording materials, therefore, as the principal ingredient of recording materials, to use Ge 2sb 2te 5be advisable.
In addition, equally, when the wavelength X of the red reproduced light that meets 0.6 μ m≤λ≤0.7 μ m that is suitable for the semiconductor laser of light source 14 is for example 0.65 μ m, real part as the relative dielectric constant of the recording materials of crystallization is-3.3, as the real part of the relative dielectric constant of amorphous recording materials, is 12.In addition, when the infrared regeneration light wavelength λ that meets 0.73 μ m≤λ≤0.83 μ m that is suitable for the semiconductor laser of light source 14 is for example 0.78 μ m, real part as the relative dielectric constant of the recording materials of crystallization is 5.9, as the real part of the relative dielectric constant of amorphous recording materials, is 17.
Therefore at recording materials, be, Ge 2sb 2te 5situation under, due to from blue light to red light wavelength (0.35 μ m≤λ≤0.7 μ m), crystallization and when noncrystalline the symbol of the real part of dielectric constant differ from one another, therefore, as the principal ingredient of recording materials to use Ge 2sb 2te 5be advisable.Especially, when blue light wavelength (0.35 μ m≤λ≤0.45 μ m), as the real part of the relative dielectric constant of the recording materials of crystallization, below-5, as the real part of the relative dielectric constant of amorphous recording materials, be greater than-5, therefore, as the principal ingredient of recording materials, use Ge 2sb 2te 5more preferred.By GeTe and Sb 2te 3composition ratio become the Ge of 22: 1 22sb 2te 25, or than the recording materials that form, also present same tendency with other composition, preferably in the regeneration of blue light wavelength.
And, at recording materials, be GeTe-Bi 2te 3the Ge of system 31bi 2te 34situation under, for cyan light wavelength, real part as the relative dielectric constant of the recording materials of crystallization is-9.3, real part as the relative dielectric constant of amorphous recording materials is 3.9, for red light wavelength, real part as the relative dielectric constant of the recording materials of crystallization is-2.9, real part as the relative dielectric constant of noncrystalline recording materials is 14, for infrared light wavelength, real part as the relative dielectric constant of the recording materials of crystallization is 15, as the real part of the relative dielectric constant of amorphous recording materials, is 15.
With Ge 2sb 2te 5time same, at Ge 31bi 2te 34time, from blue light to red light wavelength, crystallization and when noncrystalline the symbol of the real part of dielectric constant also differ from one another, as the principal ingredient of recording materials to use Ge 31bi 2te 34be advisable.Especially, when blue light wavelength, as the real part of the relative dielectric constant of the recording materials of crystallization, below-5, as the real part of the relative dielectric constant of amorphous recording materials, be greater than-5, therefore, can say as the principal ingredient of recording materials and use Ge 31bi 2te 34more preferred.Changed other GeTe-Bi of composition ratio 2te 3the recording materials of system also present same effect.
In addition, at recording materials, be the Ge of Ge-Sb system 10sb 90situation under, in blue light wavelength for example, during 0.41 μ m, real part as the relative dielectric constant of the recording materials of crystallization is-11.0, real part as the relative dielectric constant of amorphous recording materials is-4.3, in red light wavelength for example, during 0.65 μ m, real part as the relative dielectric constant of the recording materials of crystallization is-10.8, real part as the relative dielectric constant of amorphous recording materials is 13.2, in infrared light wavelength for example, during 0.78 μ m, real part as the relative dielectric constant of the recording materials of crystallization is-5.6, real part as the relative dielectric constant of amorphous recording materials is 17.9, when wavelength is 0.83 μ m, real part as the relative dielectric constant of the recording materials of crystallization is-0.62, real part as the relative dielectric constant of amorphous recording materials is 20.2, when wavelength is 0.86 μ m, real part as the relative dielectric constant of the recording materials of crystallization is 2.7, real part as the relative dielectric constant of amorphous recording materials is 21.3.
At Ge 10sb 90situation under, when wavelength is 0.492 μ m to 0.835 μ m, the symbol of the real part of crystallization and amorphous dielectric constant differs from one another, and therefore, reproducing characteristic improves and preferably, especially, when wavelength is 0.492 μ m to 0.787 μ m, as the real part of the relative dielectric constant of the recording materials of crystallization, be below-5, large as real part ratio-5 of the relative dielectric constant of amorphous recording materials, therefore, can say as the principal ingredient of recording materials and use Ge 10sb 90more preferred.Other the Ge-Sb series that has changed composition ratio also presents same effect.
In addition,, as other phase-change material, comprise Te 60ge 4sn 11au 25, Ag 4in 4sb 76te 16, GeTe, (Ge-Sn) Te, (Ge-Sn) Te-Sb 2te 3, (Ge-Sn) Te-Bi 2te 3, GeTe-(Sb-Bi) 2te 3, (Ge-Sn) Te-(Sb-Bi) 2te 3, GeTe-(Bi-In) 2te 3, (Ge-Sn) Te-(Bi-In) 2te 3, Sb-Ga, (Sb-Te)-Ga, (Sb-Te)-Ge, Sb-In, (Sb-Te)-In, Sb-Mn-Ge, Sb-Sn-Ge, Sb-Mn-Sn-Ge and (Sb-Te)-Ag-In one of them material, if become crystallization, in certain wavelength region may, have the feature that represents metalline.Therefore, pay close attention to the value of the real part of relative dielectric constant, meeting the wavelength coverage of above-mentioned preferred condition, can effectively use and comprise above-mentioned any material.
As the substrate 1 of information recording carrier 3, higher to form the flatness of face of recording layer 2, and higher being advisable of stability while making information recording carrier 3 rotation.Material as substrate 1, for example, the sheet metals such as preferred glass substrate or aluminium, and can use the resin of polycarbonate, PMMA (plexiglass), norbornene resin (for example, " ARTON " (JSR Corp.'s manufacture)) or cyclic olefin resins (such as " ZEONEX " (Japan changes into the limited manufacture of industry stock part)) etc.
In the situation that recording layer is successional film shape, when on recording materials, mark is recorded in formation, heat can spread in recording materials, causes the large mark that records that surpasses recording spot to be recorded.The big or small difference that makes to record mark because of such thermal diffusion starts to become and significantly gets up to occur in record and be labeled as 30nm when following.
Therefore, the posting field 4 of recording layer 2 is preferably island to be arranged, and the particulate structure of its size below 30nm.Accordingly, because each posting field 4 is by separate configuration, the impact of the thermal diffusion in the time of therefore can avoiding recording, posting field 4 (particulate) that can be below 30nm is recorded information well.
Yet if recording materials become the particle less than 3nm, the atomicity containing in particle reduces, the undue step-down of fusing point, the maintenance that causes the record on recording materials becomes unstable because of hot change.Therefore, the size of posting field 4 is advisable to meet 3nm≤w≤30nm.
In addition, make posting field 4 as far as possible microminiaturization reduce size, and make posting field 4 in isolated state approach and arrange as far as possible each other, from recording the aspect of densification, see comparatively desirable.The information recording carrier that this high density is arranged, the massaging device of the present embodiment can reduce cross light and record well and regenerating information.
In addition, posting field 4 refers to the posting field that is processed to small convex form as shown in Figure 2 in the present embodiment, except the cylindrical shape shown in Fig. 2, can be also circular cone, 3 pyramids, more than 4 jiaos polygonal cones, 3 corner posts or more than 4 jiaos polygonal column shapes.
Fig. 8 means the schematic diagram of an example of the information recording carrier 3 ' of the posting field 4 ' that comprises cone shape, and Fig. 9 means that the head portion that is included in cylinder has the posting field 4 of justifying into hemispheric shape " information recording carrier 3 " the schematic diagram of an example.
In Fig. 8, information recording carrier 3 ' possesses substrate 1 and recording layer 2, the posting field 4 ' that recording layer 2 comprises cone shape.In addition the posting field 4a ' that, posting field 4 ' comprises recording status and not the posting field 4b ' of recording status.The slightly pointed section of head portion tool of posting field 4 ', is more specifically cone shape.
In addition, in Fig. 9, information recording carrier 3 " possess substrate 1 and recording layer 2, the head portion that recording layer 2 is included in cylinder has the posting field 4 of justifying into hemispheric shape ".In addition, posting field 4 " the posting field 4a that comprises recording status " and the posting field 4b of recording status not ".Posting field 4 " head portion there is circular-arc section.More specifically, posting field 4 " be the shape that forms hemisphere at the head portion of cylinder.In addition, posting field 4 " can be at the head portion of cylinder, to form the shape of circular cone, can be also at the head portion of corner post, to form the shape of pyramid.
Inventor of the present invention finds, circular cone as shown in Figure 8,3 pyramids or the more than 4 jiaos tops such as polygonal cone are the posting field 4 ' of sharp shape, and, cylinder as shown in Figure 9,3 corner posts or more than 4 jiaos polygonal columns, owing to being the posting field 4 of circle or sharp shape on top " the easy optically focused of near field of light or concentrate, so preferably adopt these shapes.
In addition, posting field 4 can be all with recording materials, to form from the outstanding part of substrate 1, can be also only from the head portion of the outstanding part of substrate 1, with recording materials, to form.
Next, in the massaging device of the present embodiment, light source 14 is the single wavelength light sources that penetrate recording light and reproduced light, near field of light producing component 9 records for doubling as the structure of using and regenerating use.For example, near field of light producing component 9 consists of Au, the diamond shape (still, side view is the elongated parallelogram shown in Fig. 1) that to have compared with the length of length direction be 71nm, and the area of par is 2500nm 2.The recording light that light source 14 penetrates and the wavelength X of reproduced light are 0.405 μ m.Posting field 4 is by Ge 2sb 2te 5form, the diameter of particulate (posting field 4) is 20nm, and the thickness of recording layer 2 (height of posting field 4) h is 100nm, resonance part 22 and posting field 4 be spaced apart 15nm.Now, reflectivity when posting field 4 is crystallization is 1.00%, and reflectivity when posting field 4 is noncrystalline is 1.44%, and the variable quantity of reflectivity is 0.44%, and the degree of modulation of regeneration is 31%, obtains respectively good value.In addition, the variable quantity that the degree of modulation of regeneration can be by reflectivity divided by crystallization and noncrystalline in a larger side's reflectivity (=0.44/1.44) calculate.
In addition, near field of light producing component 9 for double as record with and the structure of regeneration use in, can significantly produce a side of the crystallization that plasma resonance strengthens, the recording sensitivity of posting field 4 can improve sometimes.Therefore, preferably, carry out the strength control of recording light that the sensitivity difference of the phase state (being crystallization or noncrystalline) of the posting field 4 before record is taken into account.
In addition,, preferably on the upper strata that is formed at the posting field 4 of the recording layer 2 on substrate 1, the symbol that forms the real part of dielectric constant is positive protective seam.By protective seam is set, has and can improve the environment resistant of the posting field 4 that forms with recording materials and reduce the equivalent damage that causes because of contacting of the resonance part 22 of the leading section with near field of light producing component 9 really.In addition; because the symbol of the real part of the dielectric constant of protective seam is for just; have and prevent from producing unnecessary plasma resonance between protective seam and resonance part 22, its result, can prevent the effect of reduction of the degree of modulation of the regeneration that causes because of the negative effect from protective seam.
Symbol as the real part of dielectric constant is positive protective seam, for example, can use and be selected from ZrSiO 4, (ZrO 2) 25(SiO 2) 25(Cr 2o 3) 50, SiCr, TiO 2, ZrO 2, HfO 2, ZnO, Nb 2o 5, Ta 2o 5, SiO 2, SnO 2, Al 2o 3, Bi 2o 3, Cr 2o 3, Ga 2o 3, In 2o 3, Sc 2o 3, Y 2o 3, La 2o 3, Gd 2o 3, Dy 2o 3, Yb 2o 3, CaO, MgO, CeO 2and TeO 2deng the inorganic material of one or more oxides etc.In addition, also can use one or more nitride that are selected from C-N, Ti-N, Zr-N, Nb-N, Ta-N, Si-N, Ge-N, Cr-N, Al-N, Ge-Si-N and Ge-Cr-N etc.
In addition, also can use carbonide, the LaF of the sulfide, SiC etc. of ZnS etc. 3, CeF 3, MgF 2in fluoride.In addition, also can form protective seam with the potpourri that is selected from one or more materials in above-mentioned material.Further, as protective seam, also can use the organic materials such as resin, now, the effect of the impact in the time of more reducing conflict while having than the above-mentioned inorganic material of use.In addition also can use, the composite material of organic material and inorganic material.
In addition, by making the surface optics ground of protective seam smooth, there is no the concavo-convex of surface, therefore there is the effect contacting that can reduce because of concavo-convex that cause and near field of light producing component 9.
(the 2nd embodiment)
Then, massaging device and information recording carrier to the present invention the 2nd embodiment, utilize Figure 10 to Figure 13, by with above-mentioned the 1st massaging device of embodiment and the difference of information recording carrier centered by describe.
Figure 10 means structure and the key diagram to the state of information recording carrier record or regenerating information of the information recording carrier of the present invention the 2nd embodiment.Figure 11 means the cut-open view of structure of information recording carrier of the variation of the present invention the 2nd embodiment.Figure 12 means the cut-open view of structure of information recording carrier of other variation of the present invention the 2nd embodiment.Figure 13 means the cut-open view of structure of information recording carrier of other variation of the present invention the 2nd embodiment.In addition, the structure of the massaging device of the present embodiment, because identical with the structure of massaging device shown in Fig. 1, illustrates so omit, and utilizes as required the symbol shown in Fig. 1 etc. to describe.
As shown in figure 10, the information recording carrier 3a of the present embodiment is such information recording carrier, at least possess substrate 1 and recording layer 2, posting field 4 ' is island and is arranged in the recording layer 2 that thickness is t2, part or all of posting field 4 ' comprises recording materials, between substrate 1 and recording layer 2, also possess the wavelength comprising with respect to irradiating light 5, the symbol of the real part of dielectric constant is that the resonance that the thickness of negative material is t1 strengthens film 34.
In addition, the massaging device of the present embodiment is information recording carrier 3a to be carried out to the massaging device of recording of information or regeneration, comprise light source 14 and have and the posting field 4 ' of recording layer 2 between produce the near field of light producing component 9 of the resonance part 22 of plasma resonance, make resonance part 22 approach posting field 4 ' configuration, irradiation light 5 from light source 14 is irradiated near field of light producing component 9, utilizes at least a portion of the near field of light 7a that resonance part 22 produces in posting field 4 ' recorded information.In addition, light source 14 is configured, make the configuration plane (XY face) with respect to posting field 4 ', the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude (with reference to Fig. 1) of the polarized light component of (direction of Y).Or, also may further include the polarization controlling optical element 30 that changes the polarization state that irradiates light 5, the polarization direction that polarization controlling optical element 30 changes from the laser 12 of light source 14 ', make the configuration plane (XY face) with respect to posting field 4 ', the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude (with reference to Fig. 6) of the polarized light component of (direction of Y).
The information recording carrier 3a of the present embodiment is that the resonance of negative material strengthens film 34 (the 1st resonance strengthens film) owing to possessing the symbol comprising by the real part of dielectric constant, therefore when near field of light producing component 9 and resonance strengthen distance between film 34 and are fully less than the wavelength of irradiation light 5 (for example, (WD+t2+t1) when 100nm is following), between them, interact, can improve the enhancing degree of plasma resonance, can improve to the recording sensitivity that is configured in the posting field 4 ' between them.
At this, in recording layer 2, posting field 4 ' is island and arranges.The enhancing that accordingly, can make resonance strengthen the plasma resonance that film 34 causes produces more consumingly.In other words, the membranaceous posting field for example if recording layer 2 has island not, because posting field is expanded in XY face, causes near field of light also at XY Directional Extension.Its result cannot produce well resonance and strengthen, thereby can not produce the enhancing that strengthens the plasma resonance of film 34 based on resonance with sufficient intensity in trickle posting field.
Yet, at recording layer 2, by island, arrange posting field 4 ', the posting field 4 ' that the resonance part 22 of near field of light producing component 9, resonance strengthen film 34 and island can closely interact, the enhancing that therefore can produce more consumingly plasma resonance.Its result, can concentrate stronger near field of light 7a at the posting field 4 ' of island, thereby can improve recording sensitivity.
In addition, for regeneration, because information recording carrier 3a possesses resonance, strengthen film 34, therefore compare with the information recording carrier 3 of the 1st embodiment, information recording carrier 3a can make the height of posting field 4 ' significantly reduce, and can improve the degree of modulation of regeneration.As its reason, think this be because, because posting field 4b ' the plasma resonance degree of the posting field 4a ' at recording status and recording status is not different, resonance strengthens the posting field 4a ' that film 34 acts on the recording status of easy resonance, can significantly strengthen and near field of light producing component 9 between plasma resonance, on the other hand, the posting field 4b ' that 34 pairs of films of resonance enhancing are difficult to the not recording status of resonance has an effect hardly, plasma resonance can not be enhanced, therefore, even if reduce significantly the height of posting field 4 ', also can improve the degree of modulation of regeneration.
In addition, the massaging device of the present embodiment possesses photodetector 17a (with reference to Fig. 1 or Fig. 7).Now, because resonance part 22 easily resonates with the posting field 4a ' in recording status, and be difficult to and posting field 4b ' resonance in recording status not, so, the reflection light quantity near field of light producing component 9 of irradiated ejaculation light or see through the light quantity that sees through of near field of light producing component 9, changes with the degree of the plasma resonance between resonance part 22 and posting field 4 '.Photodetector 17a detects above-mentioned reflected light or sees through light, and the detection signal judgement posting field 4 ' of reproducing unit 24 based on from photodetector 17a is in recording status or in recording status not, can regenerate and be recorded in the information of posting field 4 '.
In addition, in regeneration during light wavelength, the symbol of the real part of the symbol of the real part of the dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials dielectric constant under recording status is not advisable to differ from one another.Further, in regeneration during light wavelength, the real part of the real part of the relative dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials relative dielectric constant under recording status is not with a side below-5, and the opposing party is greater than-5 and is advisable.Now, can significantly improve the effect that resonance strengthens film 34 for regeneration.
In addition, as shown in figure 10, if operating distance WD increases, the near field of light 7a producing from the resonance part 22 of near field of light producing component 9 is at configuration plane (XY face) Directional Extension of posting field 4 ', but by being set, resonance strengthens film 34, can suppress above-mentioned expansion, improve the degree of concentration to the posting field 4a ' as target, can reduce to adjacent posting field 4b ', the cross light of 4c '.As its result, also can expand the operating distance WD of near field of light producing component 9.
Resonance strengthens film 34 if comprising for the symbol of real part that irradiates the wavelength dielectric constant of light 5 is negative material, has the effect that can make plasma resonance strengthen.In addition, the real part of the relative dielectric constant of the material that forming resonates strengthens film 34, to be advisable below-5, like this, can further improve the enhancing degree of plasma resonance.
The material of the principal ingredient that preferably resonance enhancing film 34 is identical with 9 employings of near field of light producing component is Ag for example.When resonance strengthens the material that film 34 and near field of light producing component 9 comprise identical principal ingredient, interact in the same way, easily improve the enhancing degree of plasma resonance.At this, principal ingredient refers to the composition of the material of the volume ratio maximum that forms resonance enhancing film 34 and near field of light producing component 9.
In the present embodiment, for example, as resonance, strengthen film 34, use a kind of metal film, this metal film is that while being formed on by sputter or evaporation etc. the wavelength X=780nm that irradiates light 5 on substrate 1, the real part of dielectric constant for example, at the film gained of the Ag of (,-24) below-5 relatively.In addition,, in order to prevent corrosion, also can adopt the compound of the Ag such as a small amount of AgPdCu that adds other metal, AgBi, AgGaCu.In addition, as resonance, strengthen film 34, the symbol that also can use the real part of dielectric constant when irradiating the wavelength X of light 5 be negative metal film or when irradiating the wavelength X of light 5 symbol of the real part of dielectric constant be the sulfide semiconductor film of negative crystalline state.Especially, as the wavelength that irradiates light 5, in the scope from redness to infrared wavelength that for example meets 600nm≤λ≤1000nm that can reduce the absorption of near field of light producing component 9, the compound of Ag or Ag is best, secondly, during using Cu, Au as material, the effect of resonance enhancing film 34 is also fine.
In addition, as resonance, strengthen the thickness of film 34, for example, adopt t1=8nm.In record in the situation that, for example Thickness Ratio is thicker while being 3nm≤t1≤100nm, has the tendency that can improve plasma resonance degree.On the other hand, in regeneration in the situation that, for example Thickness Ratio is thinner while be 2nm≤t1≤25nm, recording status and not between recording status the poor of plasma resonance become large, have the tendency that can improve the degree of modulation of regenerating.Therefore,, in order to improve the characteristic of record and regeneration, resonance strengthens the thickness of film 34 to be advisable at 3nm≤t1≤25nm.
It is in positive diaphragm 23 that posting field 4 ' is formed on respect to the symbol of real part that irradiates the wavelength dielectric constant of light 5.
Being shaped as of posting field 4 ' is spherical, and the upper surface of diaphragm 23 is smooth shape.By making being shaped as of posting field 4 ' spherical or close to the spherical shape with circular-arc section, can improve light gathering degree near field of light 7a to the posting field 4a ' that should record or concentration degree.
By making the upper surface of diaphragm 23, be smooth shape, the surface of information recording carrier 3a has not had concavo-convex, therefore has the effect contacting that can reduce because of the concavo-convex near field of light producing component 9 causing and information recording carrier 3a.In addition,, by the posting field that comprises recording materials 4 ' is formed in diaphragm 23, can improve the environment resistant of recording materials.And; by making the symbol of real part of dielectric constant of diaphragm 23 for just; can prevent from producing unnecessary plasma resonance between diaphragm 23 and resonance part 22, its result, has the effect of reduction of the degree of modulation of the regeneration that can prevent that the negative effect because of diaphragm 23 from causing.
Symbol as the real part of dielectric constant is positive diaphragm 23, for example, can adopt and be selected from ZrSiO 4, (ZrO 2) 25(SiO 2) 25(Cr 2o 3) 50, SiCr, TiO 2, ZrO 2, HfO 2, ZnO, Nb 2o 5, Ta 2o 5, SiO 2, SnO 2, Al 2o 3, Bi 2o 3, Cr 2o 3, Ga 2o 3, In 2o 3, Sc 2o 3, Y 2o 3, La 2o 3, Gd 2o 3, Dy 2o 3, Yb 2o 3, CaO, MgO, CeO 2and TeO 2deng the inorganic material of one or more oxides etc.In addition, also can adopt and be selected from C-N, Ti-N, Zr-N, Nb-N, Ta-N, Si-N, Ge-N, Cr-N, Al-N, one or more nitride in Ge-Si-N and Ge-Cr-N etc.
In addition, as the symbol of the real part of dielectric constant, be positive diaphragm 23, can use the fluoride of the carbonide, LaF3, CeF3, MgF2 etc. of the sulfide, SiC etc. of ZnS etc.Also can form with the potpourri that is selected from one or more materials in above-mentioned material.In addition, as diaphragm 23, also can use the organic material of resin etc., now, compare with above-mentioned inorganic material, there is the effect of the impact in the time of can alleviating conflict.And, also can adopt the composite material of organic material and inorganic material.
The AgPdCu that in the information recording carrier 3a of the present embodiment, for example, the thickness that resonance strengthens film 34 is 8nm, be Ag by principal ingredient forms.Posting field 4 ' is by phase-change material Ge 10sb 90formation, its diameter are that 20nm, height h are 20nm.The AgPdCu that near field of light producing component 9 is Ag by principal ingredient forms, compared with the length of length direction, is that 130nm, thickness are 24nm, and it is 4000nm that par is 3 angular shape areas 2.As record regenerating wavelength X=780nm, when operating distance WD is 20nm, the reflectivity of the near field of light producing component 9 when posting field 4 ' is crystallization is 4.8%, and reflectivity when posting field 4 ' is noncrystalline is 3.9%.Its result, the variable quantity of reflectivity is 0.9%, the degree of modulation of regeneration is 19%.
In addition, in the present embodiment, because near field of light producing component 9 is to double as to record the structure of using and regenerating use, therefore can produce significantly a side of the crystallization of plasma resonance enhancing, the recording sensitivity of posting field 4 can improve sometimes.Therefore, preferably, carry out the control of recording light intensity that the sensitivity difference of the phase state (being crystallization or noncrystalline) of the posting field 4 before record is taken into account.
At this, the manufacture method of the information recording carrier 3a of the present embodiment is described.The manufacture method of the information recording carrier 3a of the present embodiment is for the manufacture of the information recording carrier that possesses substrate 1, and the method comprises: form the step that the posting field 4 ' that comprises recording materials is the recording layer 2 of island arrangement; The symbol that forms the real part that comprises dielectric constant between substrate 1 and recording layer 2 is negative step material, strengthen film 34 for strengthening the resonance of plasma resonance.
According to above-mentioned manufacture method, the resonance that can manufacture the symbol that possesses the real part that comprises dielectric constant and be negative material strengthens the information recording carrier 3a of film 34.Accordingly, near field of light producing component 9 and resonance strengthen film 34 and posting field 4 ' interacts, and can improve the enhancing degree of plasma resonance.
Secondly, the variation of the present invention the 2nd embodiment is described.As shown in figure 11, the information recording carrier 3b of the variation of the present embodiment has following structure, the resonance that forms successively thickness and be t1 on substrate 1 strengthens the deielectric-coating 26 that film 34 and thickness are t3, then forms the posting field that hangs bell 4 that the height as recording layer 2 is h thereon ".Now, 3a compares with information recording carrier, posting field 4 " formation easier.In addition, deielectric-coating 26 can be used the material identical with said protection film 23, as its thickness t3, to be advisable from several nm to 10nm left and right.By deielectric-coating 26 being set, having, prevent that resonance from strengthening film 34 and posting field 4 " between the effect of migration.
In addition, replace the film that deielectric-coating 26 also can be used sulfide-based semiconductor (chalcogenide semiconductor), the posting field 4b now, with the not recording status that promotion contacts " crystallization to improve the effect of recording sensitivity and writing speed.
Figure 12 illustrates the information recording carrier 3c of other variation, information recording carrier 3c have hanging the posting field 4 of bell " on form corresponding thereto and thinly the structure of diaphragm 23 '.By at posting field 4 " on possess diaphragm 23 ', there is the environment resistant effect that can improve recording materials.Now, because can only make diaphragm 23 ' film forming, easily form diaphragm 23 '.
Figure 13 illustrates the information recording carrier 3d of another other variation, information recording carrier 3d have hanging the posting field 4 of bell " the upper surface that forms is for the structure of smooth diaphragm 23.Now; need to after compared with heavy back film forming diaphragm 23, by grind or planarization etching etc., make the flattening surface of diaphragm 23; but; surperficial concavo-convex no longer existence due to information recording carrier 3d, can reduce contacting because of the concavo-convex near field of light producing component 9 causing and information recording carrier 3d.
(the 3rd embodiment)
Then, massaging device and information recording carrier to the present invention the 3rd embodiment, utilize Figure 14 to Figure 18, by with above-mentioned the 2nd massaging device of embodiment and the difference of information recording carrier centered by describe.
Figure 14 means structure and the key diagram to the state of information recording carrier record or regenerating information of the information recording carrier in the present invention the 3rd embodiment.Figure 15 means the cut-open view of structure of information recording carrier of the variation of the present invention the 3rd embodiment.Figure 16 means the cut-open view of structure of information recording carrier of other variation of the present invention the 3rd embodiment.Figure 17 means the cut-open view of structure of information recording carrier of another other variation of the present invention the 3rd embodiment.Figure 18 means the cut-open view of the structure of the information recording carrier of other variation again of the present invention the 3rd embodiment.At this, because the structure of the massaging device of the present embodiment is identical with the structure of the massaging device shown in Fig. 1, so the diagram of omission is used the symbol shown in Fig. 1 etc. to describe as required.
As shown in figure 14, the information recording carrier 3e of the present embodiment is such information recording carrier, this information recording carrier at least possesses substrate 1 and recording layer 2, posting field 4 ' is island and is arranged in the recording layer 2 that thickness is t2, part or all of posting field 4 ' comprises recording materials, between substrate 1 and recording layer 2, from substrate 1 one sides, also sequentially possess that to comprise with respect to the symbol of real part that irradiates the wavelength dielectric constant of light 5 be the resonance closing membrane 36 of negative material, comprise symbol with respect to the real part of above-mentioned wavelength dielectric constant and be the intermediate coat 35 of positive material, the resonance that comprises symbol with respect to the real part of above-mentioned wavelength dielectric constant and be negative material strengthens film 34.
In addition, the massaging device of the present embodiment is information recording carrier 3e to be carried out to the massaging device of recording of information or regeneration, comprise light source 14 and possess and the posting field 4 ' of recording layer 2 between produce the near field of light producing component 9 ' of the resonance part 22 ' of plasma resonance, make resonance part 22 ' approach posting field 4 ' and configure, irradiation light 5 from light source 14 is irradiated near field of light producing component 9 ', utilizes at least a portion of the near field of light 7a that resonance part 22 ' produces in posting field 4 ' recorded information.In addition, light source 14 is configured, make the configuration plane (XY face) with respect to posting field 4 ', the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude (with reference to Fig. 1) of the polarized light component of (direction of Y).Or, also may further include the polarization controlling optical element 30 that changes the polarization state that irradiates light 5, the polarization direction that polarization controlling optical element 30 changes from the laser 12 of light source 14 ', make the configuration plane (XY face) with respect to posting field 4 ', the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude (with reference to Fig. 6) of the polarized light component of (direction of Y).
The difference of the information recording carrier 3a of the information recording carrier 3e of the present embodiment and the 2nd embodiment is, in substrate 1 and resonance, strengthen that between film 34, to possess the resonance closing membrane 36 (the 2nd resonance strengthens film) that thickness that to comprise with respect to the symbol of real part that irradiates the wavelength dielectric constant of light 5 be negative material is t5 and comprise symbol with respect to the real part of the wavelength dielectric constant of irradiation light 5 be the intermediate coat 35 that the thickness of positive material is t6, and the head portion of the resonance part 22 ' of near field of light producing component 9 ' is the shape with curvature of circular-arc section etc.
Due to except resonance strengthens film 34, also possess intermediate coat 35 and resonance closing membrane 36, therefore, in the situation that near field of light producing component 9 ' and resonance strengthen distance between film 34 and resonance closing membrane 36 be fully less than irradiate light 5 wavelength (for example, (WD+t2+t1+t6+t5) when 100nm is following), be not only that near field of light producing component 9 ' and resonance strengthen film 34 interactions, resonance enhancing film 34 and resonance closing membrane 36 between film 35 also interact, at the interior generation near field of light of intermediate coat 35 7 ' a.Its result, can further improve the enhancing degree of plasma resonance, more improves to the recording sensitivity that is configured near field of light producing component 9 ' and resonance and strengthens the posting field 4 ' between film 34.
In addition, for regeneration, because the resonance of having appended in intermediate coat 35 both sides strengthens the interaction between film 34 and resonance closing membrane 36, compare with the information recording carrier 3a of embodiment 2, can improve the degree of modulation of regeneration.As its reason, think because, because the posting field 4a ' at recording status is with recording status 4b ' plasma resonance degree is not different, the posting field 4a ' that the resonance enhancing film 34 of intermediate coat 35 both sides and resonance closing membrane 36 act on the recording status of easy resonance, can further strengthen and near field of light producing component 9 ' between plasma resonance, on the other hand, the resonance of intermediate coat 35 both sides strengthens film 34 and acts on hardly with the posting field 4b ' that 36 pairs of closing membranes of resonance are difficult to the not recording status of resonance, plasma resonance can not be enhanced, therefore, can further improve the degree of modulation of regeneration.
In addition, pin is in regeneration light wavelength, and the symbol of the real part of the symbol of the real part of the relative dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials relative dielectric constant under recording status is not advisable to differ from one another.Further, for regeneration light wavelength, the real part of the real part of the relative dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials relative dielectric constant under recording status is not with a side below-5, and the opposing party is greater than-5 and is advisable.Now, for regeneration, the resonance that can significantly improve intermediate coat 35 both sides strengthens the effect of film 34 and resonance closing membrane 36.
In addition, as shown in figure 14, if operating distance WD increases, the near field of light 7a producing from the resonance part 22 ' of near field of light producing component 9 ' is at configuration plane (XY face) Directional Extension of posting field 4 '.Yet, by being set, resonance strengthens film 34, intermediate coat 35 and resonance closing membrane 36, can suppress further above-mentioned expansion, can improve to the degree of concentration of the posting field 4a ' as target.Therefore, can reduce the posting field 4b ' that directive is adjacent, the cross light of 4c ', as its result, also can expand the operating distance WD of near field of light producing component 9 '.
Resonance strengthens film 34 and resonance closing membrane 36, as mentioned above, so long as comprise for the symbol of real part that irradiates the wavelength dielectric constant of light 5, is negative material, just has the effect that can strengthen plasma resonance.In addition, formation resonance enhancing film 34 to be advisable below-5, like this, can further improve the enhancing degree of plasma resonance with the real part of the relative dielectric constant of the material of resonance closing membrane 36.
Preferably resonance strengthens film 34 and the material of the principal ingredient that the closing membrane 36 that resonates is identical with 9 employings of near field of light producing component, for example Ag.When resonance strengthens the material that film 34 and resonance closing membrane 36 and near field of light producing component 9 comprise identical principal ingredient, interact in the same way, easily improve the enhancing degree of plasma resonance.At this, principal ingredient refers to the composition of the material of the volume ratio maximum that forms them.
In the present embodiment, for example, as resonance, strengthen film 34, intermediate coat 35 and resonance closing membrane 36, by sputter or evaporation etc. on substrate 1 film forming for penetrating light wavelength λ=780nm, relatively the real part of dielectric constant below-5 (for example,-24) thus the film of Ag form the resonance closing membrane 36 that thickness is t5=20nm, be then positive SiO with the real part of the relative dielectric constant of above-mentioned similarly film forming thereon 2thereby Deng deielectric-coating form the intermediate coat 35 that thickness is t6=4nm, thereby further form at the film of the Ag below-5 resonance that thickness is t6=8nm with the real part of the relative dielectric constant of above-mentioned similarly film forming thereon, strengthen film 34.In addition, for the film of Ag, in order to prevent corrosion, also can adopt the Ag compound of a small amount of AgPdCu that adds other metal, AgBi, AgGaCu etc.
In addition, as resonance, strengthen film 34 or resonance closing membrane 36, the symbol that also can use the real part of dielectric constant when irradiating the wavelength X of light 5 be negative metal film or when irradiating the wavelength X of light 5 symbol of the real part of dielectric constant be the sulfide semiconductor film of negative crystalline state.Especially, as the wavelength that irradiates light 5, in the scope from redness to infrared wavelength that for example meets 600nm≤λ≤1000nm that can reduce the absorption of near field of light producing component 9, the compound of Ag or Ag is best, secondly, when using Cu, Au as material, the effect of resonance enhancing film 34 and resonance closing membrane 36 is also fine.
In addition, the thickness that resonance strengthens film 34, intermediate coat 35 and resonance closing membrane 36 is for example respectively, t1=8nm, t6=4nm, t5=20nm, but for being strengthened easily, resonance produces, the thickness t 1 that preferably resonance strengthens film 34 is than the thickness t 5 thin (t1 < t5) of resonance closing membrane 36, in addition,, for the characteristic of record or regeneration is improved, the scope of each thickness is advisable with 3nm≤t1≤14nm, 2nm≤t6≤30nm, 10nm≤t5≤30nm.In this scope, according to the specification of information recording carrier 3e or near field of light producing component 9 ', above-mentioned thickness is carried out to suitable combination.
As intermediate coat 35, can adopt the deielectric-coating same with diaphragm 23.Symbol as the real part of dielectric constant is positive intermediate coat 35, for example, can use and be selected from ZrSiO 4, (ZrO 2) 25(SiO 2) 25(Cr 2o 3) 50, SiCr, TiO 2, ZrO 2, HfO 2, ZnO, Nb 2o 5, Ta 2o 5, SiO 2, SnO 2, Al 2o 3, Bi 2o 3, Cr 2o 3, Ga 2o 3, In 2o 3, Sc 2o 3, Y 2o 3, La 2o 3, Gd 2o 3, Dy 2o 3, Yb 2o 3, CaO, MgO, CeO 2and TeO 2deng in the inorganic material of one or more oxides etc.Also can use one or more nitride that are selected from C-N, Ti-N, Zr-N, Nb-N, Ta-N, Si-N, Ge-N, Cr-N, Al-N, Ge-Si-N and Ge-Cr-N etc.
In addition also can use, carbonide, the LaF of the sulfide, SiC etc. of ZnS etc. 3, CeF 3, MgF2 etc. fluoride.In addition, also can utilize the potpourri of one or more materials that are selected from above-mentioned material to form intermediate coat 35.And, as intermediate coat 35, can adopt the organic material of resin etc., also can adopt the composite material of organic material and inorganic material.
Because the top of the resonance part 22 ' of near field of light producing component 9 ' is the shape with curvature, the making of near field of light producing component 9 ' becomes easily, has the effect of easy generation plasma resonance.In addition, the curvature of the head portion of resonance part 22 ' preferably equates with the curvature of posting field 4 '.This is because can produce efficiently plasma resonance.
In the information recording carrier 3e of the present embodiment, for example, the thickness that resonance strengthens film 34 and resonance closing membrane 36 is respectively t1=8nm, t5=20nm, and the AgPdCu that is both Ag by principal ingredient forms, and intermediate coat 35 is by SiO 2form, its thickness is t6=4nm, and posting field 4 ' is by phase-change material Ge 10sb 90formation, its diameter are that 20nm, height h are 20nm.Near field of light producing component 9 ' is that the AgPdCu of Ag forms, compared with the length of length direction, is that 120nm, thickness are 24nm by mainly becoming, and par is 3 angular shapes, and area is 3700nm 2.As record regenerating wavelength X=780nm, when operating distance WD is 20nm, the reflectivity near field of light producing component 9 ' when posting field 4 ' is crystallization is 4.9%, and reflectivity when posting field 4 ' is noncrystalline is 3.6%.Its result, the variable quantity of reflectivity is 1.3%, the degree of modulation of regeneration is 27%.
The near field of light producing component 9 ' of the present embodiment, comparing at the preferred length compared with length direction with the near field of light producing component 9 of the 2nd embodiment compared with the preferred length of length direction, has the tendency shortening.Think this be because, resonance closing membrane 36 thickness t 5 have influence on whole plasma resonance, thereby the preferred length of near field of light producing component 9 ' shortens.
In addition, in the present embodiment, also, because near field of light producing component 9 ' is to double as to record the structure of using and regenerating use, therefore can produce significantly a side of the crystallization of plasma resonance enhancing, the recording sensitivity of its posting field 4 ' can improve sometimes.Therefore, preferably, carry out the control of recording light intensity that the sensitivity difference of the phase state (being crystallization or noncrystalline) of the posting field 4 ' before record is taken into account.
At this, the manufacture method of the information recording carrier 3e of the present embodiment is described.The manufacture method of information recording carrier 3e shown in Figure 14, except the manufacture method of the information recording carrier 3a shown in Figure 10, also comprises: substrate 1 and resonance strengthen the symbol that forms the real part that comprises dielectric constant between film 34 be negative material for strengthening the step of the resonance closing membrane (the 2nd resonance strengthens film) 36 of plasma resonance; In resonance, strengthen the step that the symbol that forms the real part that comprises dielectric constant between film 34 and resonance closing membrane 36 is the intermediate coat 35 of positive material.
According to above-mentioned manufacture method, can manufacture the information recording carrier 3e that also possesses intermediate coat 35 and resonance closing membrane 36 except resonance strengthens film 34.Accordingly, not only resonance strengthens film 34 interactions, and resonance strengthens film 34 and also film 35 interactions between of resonance closing membrane 36, thereby can further improve the enhancing degree of plasma resonance.
Secondly, the variation of the present invention the 3rd embodiment is described.As shown in figure 15; the information recording carrier 3f of the variation of the present embodiment has following structure; on substrate 1, form successively resonance closing membrane 36 that thickness is t5, intermediate coat 35 and thickness that thickness is t6 are that t1 resonance strengthens film 34; again thereon; as recording layer 2, form to embed that to have be highly the ellipsoidal posting field 4 of perpendicular length that h and width are w " diaphragm 23.Now, by configuration with respect to posting field 4 " configuration plane; posting field 4 " height h and the ratio of width w be for example the posting field 4 of the perpendicular long ellipsoidal shape of 1.5 to 3.0 times of left and right ", thereby more easily produce plasma resonance, can improve recording sensitivity and regeneration degree of modulation.In addition, because with respect to the configuration plane of posting field 4, the effect of height h plays a role, so even if perpendicular long ellipsoidal shape has point deformation, so long as roughly perpendicular long shape also has effect.
The information recording carrier 3g of other variation of the present invention the 3rd embodiment, as shown in figure 16, on substrate 1, form successively thickness and be the resonance closing membrane 36 of t5, intermediate coat 35 that thickness is t6 and thickness and be t1 resonance and strengthen the deielectric-coating 26 that film 34 and thickness are t3, then form the posting field that hangs bell 4 that the height as recording layer 2 is h thereon ".Now, compare posting field 4 with the information recording carrier 3e shown in Figure 14 " formation easier.In addition, deielectric-coating 26 can adopt the material identical with said protection film 23, as its thickness t3, to be advisable from several nm to 10nm left and right.By deielectric-coating 26 being set, having, prevent that resonance from strengthening film 34 and posting field 4 " between the effect of migration.
In addition, replace deielectric-coating 26 and also can use sulfide-based semi-conductive film, now, there is the posting field 4b of the not recording status that promotion contacts " crystallization to improve the effect of recording sensitivity and writing speed.
Figure 17 illustrates the information recording carrier 3h of other variation, information recording carrier 3h have hanging the posting field 4 of bell " on form corresponding thereto and thinly the structure of diaphragm 23 '.By at posting field 4 " on possess diaphragm 23 ', there is the environment resistant effect that can improve recording materials.Now, because can only make diaphragm 23 ' film forming, easily form diaphragm 23 '.
Figure 18 illustrates the information recording carrier 3i of another other variation, information recording carrier 3i have hanging the posting field 4 of bell " the upper surface that forms is for the structure of smooth diaphragm 23.Now; need to after compared with heavy back film forming diaphragm 23, by grind or planarization etching etc., make the flattening surface of diaphragm 23; but; surperficial concavo-convex no longer existence due to information recording carrier 3i, can reduce contacting because of the concavo-convex near field of light producing component 9 ' causing and information recording carrier 3i.
(the 4th embodiment)
Then, massaging device and information recording carrier to the present invention the 4th embodiment, utilize Figure 19 to Figure 21, centered by the difference of the information recording carrier with above-mentioned the 2nd embodiment, describes.
Figure 19 means structure and the key diagram to the state of information recording carrier record or regenerating information of the information recording carrier in the present invention the 4th embodiment.Figure 20 means the cut-open view of structure of information recording carrier of the variation of the present invention the 4th embodiment.Figure 21 means the cut-open view of structure of information recording carrier of other variation of the present invention the 4th embodiment.In addition, the structure of the massaging device of the present embodiment, because identical with the structure of massaging device shown in Fig. 1, illustrates so omit, and utilizes as required the symbol shown in Fig. 1 etc. to describe.
As shown in figure 19, the information recording carrier 3j of the present embodiment is substantially identical with the structure of the information recording carrier 3a of the 2nd embodiment, its difference is, approach resonance part 22 ' the upper strata of posting field 4 ' form the resonance controlling diaphragm 28 that thickness that to comprise for the symbol of real part that irradiates the wavelength dielectric constant of light 5 be negative material is t4.
In addition, the massaging device of the present embodiment is information recording carrier 3j to be carried out to the massaging device of recording of information or regeneration, comprise light source 14 and possess and the posting field 4 ' of recording layer 2 between produce the near field of light producing component 9 ' of the resonance part 22 ' of plasma resonance, make resonance part 22 ' approach posting field 4 ' and configure, irradiation light 5 from light source 14 is irradiated near field of light producing component 9 ', utilizes at least a portion of the near field of light 7a that resonance part 22 ' produces in posting field 4 ' recorded information.In addition, light source 14 is configured, make the configuration plane (XY face) with respect to posting field 4 ', the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude (with reference to Fig. 1) of the polarized light component of (direction of Y).Or, also may further include the polarization controlling optical element 30 that changes the polarization state that irradiates light 5, the polarization direction that polarization controlling optical element 30 changes from the laser 12 of light source 14 ', make the configuration plane (XY face) with respect to posting field 4 ', the near field of light 7a in the vertical direction amplitude of the polarized light component of (Z direction) is greater than in the horizontal direction the amplitude (with reference to Fig. 6) of the polarized light component of (direction of Y).
In the present embodiment, also by near field of light producing component 9 ' and resonance, strengthen the interaction of film 34, the enhancing degree of plasma resonance is improved, but resonance controlling diaphragm 28 has the function of controlling this plasma resonance.That is,, if operating distance WD increases, the near field of light 7a producing from the resonance part 22 ' on the top of near field of light producing component 9 ' is at configuration plane (XY face) Directional Extension of posting field 4 '.Yet the symbol that the real part that comprises dielectric constant is set between film 34 by strengthening near field of light producing component 9 ' and resonance is the resonance controlling diaphragm 28 of negative material, can further suppress this expansion, can improve to the degree of concentration of target record region 4a '.Therefore, can reduce the cross light of the posting field 4b ' 4c ' that directive is adjacent, as its result, also can expand the operating distance WD between near field of light producing component 9 ' and information recording carrier 3j.
Resonance controlling diaphragm 28 has than resonance and strengthens the thin thickness of film 34, for example, establishes t4-2nm, for resonance strengthen film 34 thickness t 1=8nm 1/4.When meeting t4 < t1, as the thickness of resonance controlling diaphragm 28, to be advisable in the scope of for example 1≤t4≤10nm, as resonance, strengthen film 34 thickness, to be advisable in the scope of for example 3nm≤t1≤30nm.Now, because plasma resonance can not strengthen with there is no need between near field of light producing component 9 ' and resonance controlling diaphragm 28, so can not hinder resonance to strengthen the interaction of the plasma resonance between film 34 and near field of light producing component 9 ', thereby can prevent the reduction of recording sensitivity.
When t4 >=t1, because plasma resonance is enhanced between near field of light producing component 9 ' and resonance controlling diaphragm 28, can counteract the interactional harmful effect that resonance strengthens the plasma resonance between film 34 and near field of light producing component 9 ', cause recording sensitivity to reduce.
Preferably resonance strengthens the material that film 34, resonance controlling diaphragm 28 and near field of light producing component 9 ' adopt identical principal ingredient, for example, and the material that principal ingredient is Ag.Owing to resonating, strengthen film 34, resonance controlling diaphragm 28 and near field of light producing component 9 ' and interact in an identical manner, therefore the enhancing degree of easy raising plasma resonance and controlled.
At this, the manufacture method of the information recording carrier 3j of the present embodiment is described.The manufacture method of the 3j of information recording carrier shown in Figure 19, except the manufacture method of the information recording carrier 3a shown in Figure 10, also comprising with respect to posting field 4 ', is the step of the resonance controlling diaphragm 28 of negative material at the symbol that forms the real part comprise dielectric constant with substrate 1 opposition side.
According to above-mentioned manufacture method, can manufacture the symbol that possesses the real part that comprises dielectric constant and be the information recording carrier 3j of the resonance controlling diaphragm 28 of negative material.Accordingly, can further suppress the diffusion of near field of light.Therefore, can improve to the degree of concentration of target record region 4a ', reduce the cross light of the posting field 4b ' 4c ' that directive is adjacent.And, also can further expand the operating distance WD between near field of light producing component 9 ' and information recording carrier 3j.
Secondly, the variation of the present invention the 4th embodiment is described.As shown in figure 20, the information recording carrier 3k of the variation of the present embodiment has the structure same with the information recording carrier 3d shown in Figure 13, and, also there is the structure that has formed resonance controlling diaphragm 28 on diaphragm 23.
Structure shown in Figure 20, because be directly forms posting field 4 on the deielectric-coating 26 being formed on substrate 1 " structure, therefore compare easy making with the information recording carrier 3j shown in Figure 19.In addition, also can replace deielectric-coating 26, use sulfide-based semi-conductive film, now, there is the posting field 4b of the not recording status that promotion contacts " crystallization to improve the effect of recording sensitivity and writing speed.
Figure 21 illustrates the information recording carrier 3l of other variation, and information recording carrier 3l has in the structure of the 3j of information recording carrier shown in Figure 19, at substrate 1 and resonance, strengthens the structure that forms intermediate coat 35, resonance closing membrane 36 between film 34.Now, film 35 between, and the plasma resonance that resonance strengthens between film 34 and resonance closing membrane 36 is further enhanced, and therefore, 3j compares with information recording carrier shown in Figure 19, has the effect of the degree of modulation that improves recording sensitivity and regeneration.
(the 5th embodiment)
Then, massaging device and information recording carrier to the present invention the 5th embodiment, utilize Figure 22 to Figure 24, centered by the difference of the optical information recording/reproducing device with above-mentioned the 1st embodiment, describes.
Figure 22 means the schematic diagram of the present invention's the 5th massaging device of embodiment and the structure of information recording carrier.Figure 23 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 5th embodiment.Figure 24 means the cut-open view at the XXIV-XXIV line along Figure 23 of the state of the near field of light producing component of the massaging device of the present invention the 5th embodiment and the generation of the near field of light between the posting field of information recording carrier.
The difference of the massaging device of the massaging device of the present embodiment and the 1st embodiment is near field of light producing component 9 " shape and the shape of object lens 10 '.In addition, the massaging device of the present embodiment also possess be configured in light source 14 near field of light producing component 9 " between light path in, at the present embodiment, be radial polarisation producing component in the light path between beam splitter 15 and object lens 10 ' 20 and erect mirror 21.
Near field of light producing component 9 " for the face beyond in bottom surface scribbles the circular cone prism of metal film, circular cone prism has resonance part 22 near summit ".In addition, object lens 10 ' are for making the optical axis of incident light and the consistent common coaxial type lens (in-line type lens) of optical axis of ejaculation light.
Radial polarisation producing component 20 is configured in the light path between light source 14 and near field of light producing component 9 ', makes the reproduced light that is concentrated near field of light producing component 9 ' comprise radial polarisation light (polarization direction is 8 ').By configuration radial polarisation producing component 20, can make to be concentrated near field of light producing component 9 by object lens 10 ' " irradiation light 5 ' comprise radial polarisation light.If the irradiation light 5 ' that comprises radial polarisation light is injected as near field of light producing component 9 " the bottom surface of circular cone prism; the surface plasma of mode of propagation is propagated coating the metal film of side and the interface of circular cone prism, the resonance part 22 on top " produce the near field of light 7a ' that polarization direction 27 is Z-direction.A part of this near field of light 7a ' is irradiated to the posting field 4 of recording layer 2, recorded information.
In addition, as shown in figure 24, because be irradiated to the polarization direction 27 of the near field of light 7a ' of posting field 4, with respect to the configuration plane (XY face) of posting field 4, be vertical direction, so produce respectively near field of light 7b ' 1 from the top and bottom of posting field 4a, 7b ' 2.Because the generation direction of near field of light 7b ' 1,7b ' 2 is Z direction, therefore can not arrive adjacent posting field 4b, 4c, be difficult to produce cross light.Its result, even also recorded information well of the information recording carrier 3 that high density is arranged.
In addition, resonance part 22 " and posting field 4 between the increasing intensity posting field 4 of plasma resonance be the posting field 4a of recording status or not recording status posting field 4b and change; by detecting near field of light producing component 9 " reflected light 6 ', same with the massaging device of the 1st embodiment, can judge that posting field 4 is in recording status or in recording status not, can regenerative recording in the information of above-mentioned posting field 4.
In addition, as shown in figure 22, in the massaging device of the present embodiment, because use the object lens 10 ' of common coaxial type, make light with respect to the substrate 1 of information recording carrier 3 or the vertical optically focused of the formation face of recording layer 2 (XY face), therefore the degree of freedom that designs optical system is large, and it is easy that the configuration of optical system becomes.In addition, also easily reach the high NAization of object lens 10 ', its result, has and can make resonance part 22 " effect that increases of the intensity of the near field of light 7a ' that produces.
In addition as shown in figure 24, near field of light producing component 9, " drift angle be 2 θ 2, be for example the shape that metal films such as Au or Al forms at glass or the coating of plastic circular cone prism.This shape, by utilizing so-called Kretschmann to configure, can be transformed into surface plasma efficiently by the irradiation light 5 of radial polarisation.For example,, when the wavelength of the irradiation light 5 ' of recording light and reproduced light is λ=0.405 μ m, preferably by θ 2=43.4 °, the Al of thickness t=16.3nm are coated on the shape of prism.Now, 100% irradiation light 5 ' almost can be transformed into mode of propagation surface plasma.
In addition, if make drift angle less, for example, 2 θ 2=8 °, can there is the pattern of so-called super convergent pencil of rays.Known, now, along with the resonance part 22 of mode of propagation surface plasma to top " direction propagate, its wavelength shortens, and the enhancing of the plasma resonance between more small posting field 4 becomes possibility.In this case, because the degree of modulation of the regeneration of the posting field 4 to more small is better, therefore more suitable at record and the regeneration this respect of highdensity information recording carrier.
(the 6th embodiment)
Then, to the present invention's the 6th embodiment massaging device and information recording carrier, utilize Figure 25 and Figure 26, centered by the difference of the massaging device with above-mentioned the 1st embodiment, describe.
Figure 25 means near field of light producing component and double-wavelength light source and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 6th embodiment.Figure 26 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of massaging device of the variation of the present invention the 6th embodiment.In addition, because the structure of the massaging device of the present embodiment is identical with the structure of massaging device shown in Fig. 1, thus omit diagram, and use as required the symbol shown in Fig. 1 etc. to describe.
The massaging device of the present embodiment is substantially identical with the structure of the massaging device of the 1st embodiment shown in Fig. 1, difference is, light source 14a, 14b penetrate the different recording light of wavelength and the double-wavelength light source of reproduced light, possess the near field of light producing component 9b of the recording near field of light producing component 9a corresponding with above-mentioned wavelength and regeneration use.
Light source 14b is the light source of regeneration use, penetrates the reproduced light 12b that wavelength X 1 meets 600nm≤λ 1≤700nm, for example, can use the red semiconductor laser of λ 1=660nm.Light source 14a is record light source, penetrates the recording light 12a that wavelength X 2 meets 700nm≤λ 2≤900nm, for example, can use the infrared semiconductor laser of λ 2=860nm.Therefore, the present embodiment also can be used the optical system identical with the massaging device of the 1st embodiment shown in Fig. 1.
In addition, the structure of double-wavelength light source is not particularly limited to above-mentioned example, can carry out various changes, as double-wavelength light source, also can adopt by regeneration use for example meet 600nm≤λ 1≤700nm, the red semiconductor laser chip of λ 1=660nm and recordingly for example meet 700nm≤λ 2≤900nm, the infrared semiconductor laser chip double-wavelength light source close to each other and integrated of λ 2=860nm.
The regeneration near field of light producing component 9b of use and recording near field of light producing component 9a take the plane of incidence as identical in fact towards mode along directions X disposed adjacent.The shape that is both 3 corner post shapes, consists of same material, and for example, principal ingredient is Ag, is formed on the same substrate (diagram is omitted) that doubles as heating radiator.Each near field of light producing component 9b, 9a have the length corresponding to the Z direction (compared with length direction) of wavelength, the near field of light producing component 9b's of regeneration use is for example 110nm compared with the length of length direction, and the length of recording near field of light producing component 9a is for example 145nm.Due to regeneration wavelength ratio marking wave length, the near field of light producing component 9b of the use of therefore regenerating compares with recording near field of light producing component 9a, short in the length of Z direction corresponding to wavelength, can make the characteristic of near field of light producing component be adapted to respectively each wavelength.
By making characteristic adaptation according to each wavelength, when recording light 5a is irradiated to the near field of light producing component 9b of regeneration use because going beyond the scope or misplacing, or, when reproduced light 5b is irradiated to recording near field of light producing component 9a mistakenly, because the irradiation of the wavelength for different is difficult to produce plasma resonance, so can suppress to irradiate because of mistake the harmful effect bringing.Therefore, no longer need to be near field of light producing component 9b, 9a must separated recording light 5a and the focal point separately of reproduced light 5b, make the position alignment of optical system and optical system become easy.
In addition, in the massaging device of the present embodiment, when the orbital direction of record regenerating is Y-direction, record is used and near field of light producing component 9a, the 9b of regeneration use can not follow the tracks of same track immediately, and when recording or elimination needs the regular hour, by by record with and the near field of light producing component 9a, the distance of 9b of regeneration use separate this time, can after record, confirm the write check (write verification) of recording status.
In addition,, as double-wavelength light source, when adopting the blue semiconductor laser chip of for example λ 1=405nm that meets 350nm≤λ 1≤450nm of the use of for example regenerating, the near field of light producing component 9b of regeneration use is to adopt the Al of the material of easy generation near field of light to be advisable.Therefore,, as the material of principal ingredient of near field of light producing component 9b and the material of the principal ingredient of recording near field of light producing component 9a of regeneration use, by using respectively for example Al and Ag, it is better that characteristic can become.
In addition, part or all of posting field 4 comprises recording materials, the principal ingredient of these recording materials is phase-change recording materials, when recording status with when recording status does not correspond respectively to one of them of noncrystalline and crystallization, phase-change material its dielectric constant under non-crystalline state is just generally, and when wavelength shortens, under crystalline state, the symbol of its dielectric constant easily becomes negatively, thereby is suitable for utilizing the above-mentioned regeneration of plasma resonance.Therefore, in the situation that wavelength is longer, because the symbol of dielectric constant under crystallization and non-crystalline state is all for just, corresponding to the difference of the plasma resonance of phase state, reduce, therefore there is the effect that recording sensitivity is identical.
In addition, in the information recording carrier of the present embodiment, part or all of preferred posting field 4 comprises recording materials, when regeneration light wavelength, the symbol of the real part of the symbol of the real part of the dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials dielectric constant under recording status not differs from one another, when recording light wavelength, the symbol of the real part of the symbol of the real part of the dielectric constant of above-mentioned recording materials under recording status and the above-mentioned recording materials dielectric constant under recording status is not mutually the same.
For example,, in the information recording carrier of the present embodiment, when recording materials are used Ge 10sb 90, during regeneration wavelength X 1=660nm, under crystalline state, the real part of dielectric constant is-12.8, and under non-crystalline state, the real part of dielectric constant is 11.4, and because plasma resonance degree is different, therefore the degree of modulation of regeneration is good.
In addition, when regeneration wavelength is during for λ 1=780nm for example, under crystalline state, the real part of dielectric constant be-5.6, and under non-crystalline state, the real part of dielectric constant is 17.9, and due to plasma resonance degree difference, the degree of modulation of now regenerating is also good.In addition, at Ge 10sb 90situation under, when wavelength is 0.492 μ m to 0.835 μ m because crystallization and when noncrystalline the symbol of the real part of dielectric constant differ from one another, so reproducing characteristic improves.Especially, when wavelength is 0.492 μ m to 0.787 μ m, because the relative real part of dielectric constant be below-5 under crystalline state, large than-5 under non-crystalline state, so can say better.
On the other hand, when recording wavelength is during for λ 2=860nm for example, under crystalline state, the real part of dielectric constant is 2.7, under non-crystalline state, the real part of dielectric constant is 21.3, the real part of dielectric constant all, for just, therefore can be reduced in the poor sensitivity of the record under crystalline state and non-crystalline state.In addition, if λ is 2 >=835nm, because the real part of dielectric constant is all for just, so preferred λ 2 >=835nm.
Secondly, the massaging device of the variation shown in Figure 26 is described.Massaging device shown in Figure 26 is substantially identical with the structure of the massaging device shown in Figure 25, difference is, the regeneration near field of light producing component 9b of use and recording near field of light producing component 9a be along Y-direction disposed adjacent, the plane of incidence that makes recording light 5a and reproduced light 5b for identical in fact towards.
When the orbital direction of record regenerating is Y-direction, in the massaging device shown in Figure 25, record is used and near field of light producing component 9a, the 9b of regeneration use can not follow the tracks of same track simultaneously, and in the present embodiment, because record is used and near field of light producing component 9a, the 9b of regeneration use are positioned in same rail, so can be after record regenerating information immediately, and can after record, confirm the write check of recording status.
(the 7th embodiment)
Then, massaging device and information recording carrier to the present invention the 7th embodiment, utilize Figure 27, centered by the difference of the massaging device with above-mentioned the 6th embodiment, describes.
Figure 27 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 7th embodiment.
The difference of the massaging device shown in the massaging device of the present embodiment and Figure 25 and Figure 26 is, the near field of light producing component 9b of regeneration use and recording near field of light producing component 9a are configured to its back side (not penetrated light-struck face) opposite one another.
The near field of light producing component 9b of regeneration use and recording near field of light producing component 9a are respectively formed at the back side of the same substrate (omitting diagram) that doubles as heating radiator.Recording light 5a irradiates near field of light producing component 9a along-Y-direction, and reproduced light 5b irradiates near field of light producing component 9a along reverse Y-direction.Therefore, in the present embodiment, the optical system of using by the right side configuration record at drawing, in the optical system of the left side of drawing configuration regeneration use, the optical system of the separated recording optical system of energy and regeneration use, therefore easily configures optical system.
In addition, in the present embodiment, when the orbital direction of record regenerating is Y-direction, also because record is used and near field of light producing component 9b, the 9a of regeneration use are positioned on same track, so can be after record regenerating information immediately, and can after record, confirm the write check of recording status.
(the 8th embodiment)
Then, massaging device and information recording carrier to the present invention the 8th embodiment, utilize Figure 28 and Figure 29, centered by the difference of the massaging device with above-mentioned the 6th embodiment, describes.
Figure 28 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device in the present invention the 8th embodiment.Figure 29 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of massaging device of the variation of the present invention the 8th embodiment.
The massaging device of the present embodiment is possessing respectively recording near field of light producing component 9a and the regeneration near field of light producing component 9b this respect of use and the structural similarity of the massaging device shown in Figure 25, difference is, as light source 14, use the single wavelength light source that penetrates recording light and reproduced light, the length compared with length direction of the near field of light producing component 9b of the regeneration of the Length Ratio compared with the length direction use of recording near field of light producing component 9a is short.
As light source 14, use and for example meet 700nm≤λ 1≤900nm, single wavelength light source of the infrared semiconductor laser chip of λ 1=780nm.Therefore, can simplify the structure of light source.
The regeneration near field of light producing component 9b of use and recording near field of light producing component 9a take the plane of incidence as identical in fact towards mode along directions X disposed adjacent.The shape that is both 3 corner post shapes, consists of same material, and for example, principal ingredient is Ag, is formed on the same substrate (diagram is omitted) that doubles as heating radiator.For example, recording near field of light producing component 9a's is 110nm compared with the length of length direction, the near field of light producing component 9b's of regeneration use is 145nm compared with the length of length direction, and recording near field of light producing component 9a compares with the near field of light producing component 9b of regeneration use, short compared with the length of length direction.
The length of the near field of light producing component 9b of regeneration use is preferably easily and the posting field 4a of recording status produces the length that resonance strengthens, and the length of recording near field of light producing component 9a is preferably not too easily and the posting field 4a of recording status produces the length that resonance strengthens.Now, when obtaining the degree of modulation of regeneration, when recording, owing to not too easily producing resonance, strengthen, therefore, can be suppressed at the posting field 4a of recording status and recording sensitivity poor of the posting field 4b of recording status not.
In addition, not too easily produce the viewpoint that resonance strengthens when recording, also can make the length compared with length direction of near field of light producing component 9b of the regeneration of the Length Ratio compared with length direction use of recording near field of light producing component 9a long.
Secondly, the massaging device of the variation shown in Figure 29 is described.Massaging device shown in Figure 29 is substantially identical with the structure of the massaging device shown in Figure 28, difference is, the regeneration near field of light producing component 9b of use and recording near field of light producing component 9a be along Y-direction disposed adjacent, make the plane of incidence of recording light 5a and reproduced light 5b be essentially identical towards.
When the orbital direction of record regenerating is Y-direction, in the massaging device shown in Figure 28, record is used and near field of light producing component 9b, the 9a of regeneration use can not follow the tracks of same track simultaneously, and in the present embodiment, owing to recording near field of light producing component 9b, the 9a of use and regeneration use, be positioned on same track, therefore can be after record regenerating information immediately, and can after record, confirm the write check of recording status.
(the 9th embodiment)
Then, massaging device and information recording carrier to the present invention the 9th embodiment, utilize Figure 30 and Figure 31, centered by the difference of the massaging device with above-mentioned the 1st embodiment, describes.
Figure 30 means near field of light producing component and the key diagram to the state of information recording carrier record or regenerating information of the massaging device of the present invention the 9th embodiment.Figure 31 means the near field of light producing component of massaging device and light source and the key diagram to the state of information recording carrier record or regenerating information of the variation of the present invention the 9th embodiment.
In the massaging device of the present embodiment, near field of light producing component 9 doubles as recording near field of light producing component and the regeneration near field of light producing component this point of use and the structural similarity of the massaging device shown in Fig. 1 to Fig. 3, and difference is, identical with the massaging device shown in Figure 25, as light source, use the double-wavelength light source that penetrates recording light and reproduced light.
Particularly, the wavelength of the wavelength ratio reproduced light 5b of recording light 5a is long, as light source, use regeneration use for example met to 600nm≤λ 1≤700nm, the red semiconductor laser chip of λ 1=660nm and recordingly for example meet 700nm≤λ 2≤900nm, the infrared semiconductor laser chip so-called double-wavelength light source close to each other and integrated of λ 2=860nm.
Recording light 5a injects the plane of incidence of near field of light producing component 9 and the plane of incidence that reproduced light 5b injects near field of light producing component 9 is the same face, according to this structure, can simplify the optical system of record or regeneration.
For regeneration wavelength, preferably make the posting field 4a that is easy and recording status compared with the length of length direction of near field of light producing component 9 produce the length that resonance strengthens, and for recording wavelength, preferably make the posting field 4a that is not too easy and recording status compared with the length of length direction of near field of light producing component 9 produce the length that resonance strengthens.Its result, when obtaining the degree of modulation of regeneration, when recording, strengthens owing to not too easily producing resonance, therefore, can be suppressed at the posting field 4a of recording status and recording sensitivity poor of the posting field 4b of recording status not.
In addition, not too easily produce the viewpoint that resonance strengthens when recording, also can make recording wavelength shorter than regeneration wavelength.
Secondly, the massaging device of the variation shown in Figure 31 is described.In the massaging device shown in Figure 31, it is different with the plane of incidence that reproduced light 5b injects near field of light producing component 9 that recording light 5a injects the plane of incidence of near field of light producing component 9, light source 14a will have one of them tabular surface of the recording light 5a directive near field of light producing component 9 of above-mentioned wavelength, and light source 14b will have another tabular surface of the reproduced light 5b directive near field of light producing component 9 of the wavelength above-mentioned wavelength different from recording light 5a.
In the present embodiment, the optical system of using by the right side configuration record at drawing, optical system in the left side of drawing configuration regeneration use, can make the optical system of recording optical system and regeneration use separately, therefore the configuration of optical system becomes easy, and, because the wavelength of each light source 14a, 14b is respectively single wavelength, so can easily form bloomed coating (non-reflective coat) of optical element etc.
(the 10th embodiment)
Then, massaging device and information recording carrier to the present invention the 10th embodiment, utilize Figure 32, centered by the difference of the optical information recording/reproducing device with above-mentioned the 1st embodiment, describes.In each above-mentioned embodiment, be to utilizing near field of light rather than magnetic field to record information recording carrier or the massaging device of regenerating information is illustrated, but the massaging device that the present invention is employed is not particularly limited to these embodiment.The present invention also can be applied to possess magnetic recording portion equally, and the magnetic field producing by magnetic recording portion, to being irradiated and the massaging device of heated posting field recorded information by near field of light, can obtain same effect.
Figure 32 means the schematic diagram of the present invention's the 10th massaging device of embodiment and the structure of information recording carrier.Massaging device 200 possesses light source 201, near field of light producing component 202 and magnetic recording portion 203.At this, massaging device 200 can also possess drive division 204 or control part 205 etc.
Drive division 204 for example, consists of motor etc., makes 206 rotations of discoideus information recording carrier.Control part 205 generates for making near field of light producing component 202 send the signal of desirable light and this signal is sent to light source 201.For example, the record data that the record data generating unit that control part 205 can be based on inner generates are set the power etc. that penetrates light.
Light source 201 sends and penetrates light 208 according to the signal from control part 205, irradiates near field of light producing component 202.Near field of light producing component 202, according to irradiated ejaculation light 208, produces near field of light 207 by plasma resonance.Near field of light 207 is irradiated to the posting field (for example, recording film or particulate) of information recording carrier 206.
At this, the posting field of information recording carrier 206 can contain magnetic recording material.Now, 200 pairs of massaging devices irradiate by near field of light 207 and heated posting field applies the magnetic field recorded information that magnetic recording portion 203 produces.That is, from the near field of light 207 of near field of light producing component 202, be irradiated to posting field, once posting field is heated, the coercive force of posting field temporarily reduces.Utilize this principle, the posting field that coercive force is reduced, the magnetic field producing by magnetic recording portion 203 makes the variations such as magnetic pole of posting field, thereby carries out recording of information.
In the massaging device 200 of said structure, even return to zero also can obtain following effect.
First, when possessing resonance, information recording carrier 206 strengthens film, and when the distance of near field of light producing component 202 and resonance enhancing film is fully less than the wavelength that penetrates light 208, be for example that 100nm is when following, by near field of light producing component 202 and resonance, strengthen the interaction of film, can improve the enhancing degree of plasma resonance.Accordingly, can carry out efficiently the heating of the posting field based near field of light producing component 202.
In addition,, when information recording carrier 206 possesses resonance controlling diaphragm, can further suppress the diffusion of near field of light.Therefore, can improve to the degree of concentration of the posting field as heating target.Accordingly, can aim at more accurately heating region.Its result, can reduce the cross light to adjacent posting field that magnetic recording portion 203 causes, and can further expand the operating distance between near field of light producing component 202 and information recording carrier 206.
In addition, when information recording carrier 206 also possesses intermediate coat and resonance closing membrane except resonance strengthens film, and when near field of light producing component 202 and resonance strengthen film and the distance of the closing membrane that resonates is fully less than the wavelength that penetrates light 208, be for example that 100nm is when following, be not only the interaction between near field of light producing component 202 and resonance enhancing film, and resonance strengthen film and resonance closing membrane between film also interact, thereby can further improve the enhancing degree of plasma resonance.Accordingly, can carry out efficiently the heating of the posting field based near field of light producing component 202.
Above, the massaging device of the 1st to 10 embodiment and information recording carrier are illustrated, but, the present invention is not limited to these embodiment, massaging device and the information recording carrier of the structure combination in any of the massaging device of each embodiment and information recording carrier are also contained in the present invention, and there is same effect.
In addition, the object lens that above-described embodiment is used, collimation lens and detection lens, be to name for convenience's sake, general identical with lens.
In addition, in the above-described embodiment, as information recording carrier, take CD is illustrated as example, but, by the same massaging device forming of the massaging device with above-described embodiment, the media applications of the multiple different sizes such as thickness or recording density, in the card shape that is designed to record or to regenerate, drum type or banded information recording carrier, is also contained in scope of the present invention.
According to each above-mentioned embodiment, main points of the present invention are summarized as follows.That is, the information recording carrier that an aspect of of the present present invention is related, comprising: substrate; The posting field that comprises recording materials is the recording layer that island is arranged; Be formed on and for strengthening the 1st resonance of plasma resonance, strengthen film between described substrate and described recording layer, wherein, the symbol that described the 1st resonance strengthens the real part that film comprises dielectric constant is negative material.
In this information recording carrier, the symbol that strengthens the real part that film comprises dielectric constant due to the 1st resonance is that the posting field of negative material and recording layer is island and arranges, so the resonance part of near field of light producing component, the 1st resonance strengthen film, posting field can closely interact.Its result, can make the enhancing of plasma resonance occur further, thereby can utilize near field of light, and the posting field that high density is arranged is recorded information well.
Preferably, the thickness that described the 1st resonance strengthens film is below the above 25nm of 2nm.
In this case, owing to can increasing recording status and plasma resonance during recording status poor not, therefore can improve the degree of modulation of regeneration.
Preferably, described information recording carrier also comprises with respect to described posting field and is configured in the resonance controlling diaphragm with described substrate opposition side, and wherein, the symbol of the real part that described resonance controlling diaphragm comprises dielectric constant is negative material.
In this case, owing to strengthening the resonance controlling diaphragm that the symbol that forms the real part that comprises dielectric constant between film is negative material near field of light producing component and resonance, therefore near field of light can be suppressed to the diffusion of the configuration plane direction of posting field, the light harvesting degree to the posting field as target can be improved.Its result, can reduce to the cross light of adjacent posting field, and can expand the operating distance between near field of light producing component and information recording carrier.
Preferably, the thin thickness of the 1st resonance enhancing film described in the Thickness Ratio of described resonance controlling diaphragm.
In this case, because the plasma resonance between near field of light producing component and resonance enhancing film is not enhanced, can not affect the interaction that resonance strengthens the plasma resonance between film and near field of light producing component, therefore can prevent the decline of recording sensitivity.
Preferably, described information recording carrier also comprises: be formed on described substrate and described the 1st resonance and strengthen and for strengthening the 2nd resonance of plasma resonance, to strengthen film between film; Be formed on the described the 1st intermediate coat resonating between enhancing film and described the 2nd resonance enhancing film, wherein, the symbol of the real part that described the 2nd resonance enhancing film comprises dielectric constant is negative material, and the symbol of the real part that described intermediate coat comprises dielectric constant is positive material.
In this case, because not only near field of light producing component and the 1st resonance strengthen membrane interaction, and the 1st resonance strengthen film and the 2nd resonance and strengthen film and also interact by intermediate coat, in intermediate coat, produce near field of light, therefore can improve the enhancing degree of plasma resonance, further improve the recording sensitivity to posting field.
Preferably, the thin thickness of the 2nd resonance enhancing film described in the Thickness Ratio of described the 1st resonance enhancing film.
In this case, because the 1st Thickness Ratio the 2nd that resonates enhancing film resonates, strengthen the thin thickness of film, plasma resonance more easily strengthens.
Preferably, the shape of described posting field is perpendicular long ellipsoidal shape with respect to the configuration plane of described posting field.
In this case, because plasma resonance more easily produces, can improve recording sensitivity and regeneration degree of modulation.
The related massaging device of other aspects of the present invention is above-mentioned information recording carrier to be carried out to the massaging device of recording of information or regeneration, comprising: light source; Have and described posting field between produce the near field of light producing component of the resonance part of plasma resonance, wherein, described resonance part, by the ejaculation illumination from described light source, be mapped to described near field of light producing component, produce plasma resonance, described the 1st resonance strengthens film, and the plasma resonance between described resonance part and described posting field is strengthened, described resonance part, produces near field of light and described near field of light is irradiated to described posting field from described recording layer side.
In this massaging device, the symbol that strengthens the real part that film comprises dielectric constant due to the 1st resonance of information recording carrier is that the posting field of negative material and recording layer is island and arranges, so the resonance part of near field of light producing component, the 1st resonance strengthen film, posting field can closely interact.Its result, can make the enhancing of plasma resonance occur further, thereby can utilize near field of light, and the posting field that high density is arranged is recorded information well.
Preferably, the material of the principal ingredient of described near field of light producing component is identical with the material of the principal ingredient of described the 1st resonance enhancing film.
In this case, because near field of light producing component and resonance strengthen the material that film comprises identical principal ingredient, therefore interact in the same way, easily make the enhancing degree raising of plasma resonance.
Preferably, configuration plane with respect to described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction, utilizes at least a portion of the near field of light producing from described resonance part in described posting field recorded information.
At this, described light source can be configured to, make the configuration plane with respect to described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction, or, described massaging device can also possess the polarization controlling optical element that changes described ejaculation polarized state of light, described polarization controlling optical element changes the ejaculation polarisation of light direction from described light source, make the configuration plane with respect to described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction.
In this case, because by configuration light source or polarization controlling optical element, thereby the polarization direction that makes the near field of light that produces near field of light producing component increases the polarized light component of vertical direction with respect to the configuration plane of posting field close to vertical direction, from the near field by near field of light producing component, light-struck near field direction of light of supervening as the posting field of target is substantially vertical direction with respect to configuration plane, so can not produce bad impact to adjacent posting field, can reduce cross light and good also record to high-density and regenerating information.Its result, makes the good high density recording below diffraction limit become possibility, can realize jumbo massaging device and information recording carrier.
Preferably, described massaging device also comprises: detect from the reflected light of described near field of light producing component or see through the photodetector that sees through light of described near field of light producing component; Detection signal based on from described photodetector judges that described posting field is in recording status or in recording status not, regenerative recording is in the reproducing unit of the information of described posting field.
In this case, because not being detects near field of light but reproduced light is shone directly near field of light producing component to detect from the reflected light of near field of light producing component or through light, therefore can fully increase reflection light quantity, through the light quantity of light quantity, reflection light quantity, change or see through the light quantity variation of light quantity, thereby can improve the degree of modulation of regenerated signal.
Preferably, the interval between described posting field is below the amplitude of described posting field.
In this case, because the interval between posting field is below the amplitude of posting field, therefore posting field densification can be made, the recorded information heaped capacity of information recording carrier can be made.
Preferably, described light source comprises the recording light and the double-wavelength light source with the reproduced light of 2nd wavelength different from described the 1st wavelength that ejaculation has the 1st wavelength; Described near field of light producing component comprises corresponding to the recording near field of light producing component of described the 1st wavelength with corresponding to the near field of light producing component of the regeneration use of described the 2nd wavelength.
In this case, owing to can suitably adjusting corresponding to recording light and regeneration light wavelength the characteristic of near field of light producing component of recording near field of light producing component and regeneration use, therefore, even when recording light is irradiated to the near field of light producing component of regeneration use by mistake, or, when reproduced light is irradiated to recording near field of light producing component by mistake, because be not easy to cause plasma resonance for the irradiation of different wave length, so can suppress to irradiate because of mistake the bad impact causing.Its result, needn't be on the near field of light producing component of recording near field of light producing component and regeneration use the light harvesting point separately of separated recording light and reproduced light expressly, make optical system and their position adjustment become easier.
Preferably, part or all of described posting field comprises recording materials, the principal ingredient of described recording materials is phase-change recording materials, and the recording status of described posting field and not recording status one of correspond respectively in the qi of noncrystalline and crystallization, and the 1st wavelength is short described in described the 2nd wavelength ratio.
In this case, due to the wavelength ratio of reproduced light, to record light wavelength short, therefore,, for the short reproduced light of wavelength, under crystalline state, the symbol of the dielectric constant of phase-change recording material easily becomes negative, can utilize plasma resonance to carry out good regeneration action, and for the long recording light of ripple, under crystallization and non-crystalline state, the symbol of dielectric constant is all for just, difference corresponding to the plasma resonance of phase state is lowered, thereby can make crystallization equate with the recording sensitivity of non-crystalline state.
Preferably, part or all of described posting field comprises recording materials, for described the 1st wavelength, the symbol of the real part of the symbol of the real part of the dielectric constant of described recording materials under recording status and the described recording materials dielectric constant under recording status is not identical.
In this case, due to for recording light wavelength, the symbol of the real part of the symbol of the real part of the dielectric constant of recording materials under recording status and the recording materials dielectric constant under recording status is not identical, therefore, for recording light, difference corresponding to the plasma resonance of phase state is lowered, thereby can make crystallization equate with the recording sensitivity of non-crystalline state.
Preferably, described light source comprises the single wavelength light source that penetrates recording light and reproduced light, the near field of light producing component that described near field of light producing component comprises recording near field of light producing component and regeneration use.
In this case, owing to using single wavelength light source, therefore can simplify the formation of light source, in addition, by the near field of light producing component of recording near field of light producing component and regeneration use is configured on same track, can be after record regenerating information or confirm recording status after record immediately.
Preferably, the length compared with length direction compared with the near field of light producing component of the use of regenerating described in the Length Ratio of length direction of described recording near field of light producing component is long.
In this case, when recording wavelength is longer than regeneration wavelength, can suitably set for wavelength separately the characteristic of near field of light producing component.
Preferably, the near field of light producing component of described recording near field of light producing component and described regeneration use configures at the back side each other oppositely.
In this case, owing to the optical system of recording optical system and regeneration use can being separated, therefore, it is easy that the configuration of optical system becomes, and, the near field of light producing component of recording near field of light producing component and regeneration use can be configured on same track, thus can be after record regenerating information or confirm recording status after record immediately.
Preferably, described light source comprises the recording light and the double-wavelength light source with the reproduced light of 2nd wavelength different from described the 1st wavelength that ejaculation has the 1st wavelength, and described near field of light producing component doubles as the near field of light producing component of recording near field of light producing component and regeneration use.
In this case, the plane of incidence of the plane of incidence of the near field of light producing component that recording light is injected and the near field of light producing component that reproduced light is injected is same, can simplify the optical system of record and regeneration.
The manufacture method of the information recording carrier that other aspects of the present invention are related, the information recording carrier for the manufacture of possessing substrate, comprising: form the step that the posting field that comprises recording materials is the recording layer of island arrangement; The 1st resonance that is formed for strengthening plasma resonance between described substrate and described recording layer strengthens the step of film, and wherein, the symbol that described the 1st resonance strengthens the real part that film comprises dielectric constant is negative material.
According to the manufacture method of this information recording carrier, owing to can manufacturing the symbol that possesses the real part that comprises dielectric constant, it is the information recording carrier that the 1st resonance of negative material strengthens film, therefore, by near field of light producing component, the 1st resonance enhancing film, posting field, interact, can improve the enhancing degree of plasma resonance.Its result, can utilize near field of light, and the posting field that high density is arranged is recorded information well.
The massaging device that other aspects of the present invention are related is to possessing substrate and have the massaging device that the information recording carrier of the recording layer of the posting field that island arranges carries out recording of information or regeneration on described substrate, comprising: light source; Have and described posting field between produce the near field of light producing component of the resonance part of plasma resonance, wherein, described resonance part is mapped to described near field of light producing component by the ejaculation illumination from described light source, produce plasma resonance, configuration plane with respect to described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction, utilizes at least a portion of the near field of light that described resonance part produces in described posting field recorded information.
At this, described light source can be configured to, make the configuration plane with respect to described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction, or, described massaging device also can also possess the polarization controlling optical element that changes described ejaculation polarized state of light, described polarization controlling optical element changes the ejaculation polarisation of light direction from described light source, make the configuration plane with respect to described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction.
In this case, because by configuration light source or polarization controlling optical element, thereby the polarization direction that makes the near field of light that produces near field of light producing component increases the polarized light component of vertical direction with respect to the configuration plane of posting field close to vertical direction, from the near field by near field of light producing component, light-struck near field direction of light of supervening as the posting field of target is substantially vertical direction with respect to configuration plane, so can not produce bad impact to adjacent posting field, can reduce cross light and good also record to high-density and regenerating information.Its result, owing to making the good high density recording below diffraction limit become possibility, can realize jumbo massaging device and information recording carrier, therefore can utilize near field of light, and the posting field that high density is arranged is recorded information well.
In industry, utilize possibility
The manufacture method of information recording carrier of the present invention, massaging device and information recording carrier, because the posting field that high density is arranged is recorded information well, so as utilizing near field of light well and the manufacture method etc. of information recording carrier, massaging device and the information recording carrier of recorded information is extremely useful to high-density.

Claims (21)

1. an information recording carrier, is characterized in that comprising:
Substrate;
The posting field that comprises recording materials is the recording layer that island is arranged;
Be formed between described substrate and described recording layer, for strengthening the 1st resonance of plasma resonance, strengthen film, wherein, the symbol of the real part that described the 1st resonance enhancing film comprises dielectric constant is negative material.
2. information recording carrier according to claim 1, is characterized in that: the thickness that described the 1st resonance strengthens film is below the above 25nm of 2nm.
3. information recording carrier according to claim 1, characterized by further comprising: with respect to described posting field, be configured in the resonance controlling diaphragm with described substrate opposition side, wherein,
The symbol of the real part that described resonance controlling diaphragm comprises dielectric constant is negative material.
4. information recording carrier according to claim 3, is characterized in that: described in the Thickness Ratio of described resonance controlling diaphragm, the 1st resonance strengthens the thin thickness of film.
5. information recording carrier according to claim 1, characterized by further comprising:
Be formed between described substrate and described the 1st resonance enhancing film, for strengthening the 2nd resonance of plasma resonance, strengthen film;
Be formed on described the 1st resonance and strengthen the intermediate coat between film and described the 2nd resonance enhancing film, wherein,
The symbol of the real part that described the 2nd resonance enhancing film comprises dielectric constant is negative material,
The symbol of the real part that described intermediate coat comprises dielectric constant is positive material.
6. information recording carrier according to claim 5, is characterized in that: described in the Thickness Ratio of described the 1st resonance enhancing film, the 2nd resonance strengthens the thin thickness of film.
7. information recording carrier according to claim 1, is characterized in that: the shape of described posting field is perpendicular long ellipsoidal shape with respect to the configuration plane of described posting field.
8. a massaging device, carries out recording of information or regeneration to information recording carrier claimed in claim 1, it is characterized in that comprising:
Light source;
Have and described posting field between produce the near field of light producing component of the resonance part of plasma resonance, wherein,
Described resonance part, by allowing the ejaculation illumination from described light source be mapped to described near field of light producing component, produces plasma resonance,
Described the 1st resonance strengthens film, and the plasma resonance between described resonance part and described posting field is strengthened,
Described resonance part, produces near field of light and described near field of light is irradiated to described posting field from described recording layer side.
9. massaging device according to claim 8, is characterized in that: the material of the principal ingredient of described near field of light producing component is identical with the material of the principal ingredient of described the 1st resonance enhancing film.
10. massaging device according to claim 8, is characterized in that:
With respect to the configuration plane of described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction,
At least a portion of the near field of light that utilization produces from described resonance part is in described posting field recorded information.
11. massaging devices according to claim 10, characterized by further comprising:
Detection is from the reflected light of described near field of light producing component or see through the photodetector that sees through light of described near field of light producing component;
Detection signal based on from described photodetector, judges that described posting field is in recording status or in recording status not, regenerative recording is in the reproducing unit of the information of described posting field.
12. massaging devices according to claim 10, is characterized in that: the interval between described posting field is below the amplitude of described posting field.
13. massaging devices according to claim 10, is characterized in that:
Described light source, comprises and penetrates the recording light and the double-wavelength light source with the reproduced light of 2nd wavelength different from described the 1st wavelength with the 1st wavelength;
Described near field of light producing component, comprises corresponding to the recording near field of light producing component of described the 1st wavelength with corresponding to the near field of light producing component of the regeneration use of described the 2nd wavelength.
14. massaging devices according to claim 13, is characterized in that:
Part or all of described posting field comprises recording materials,
The principal ingredient of described recording materials is phase-change recording materials,
The recording status of described posting field and not recording status correspond respectively to one of them of noncrystalline and crystallization,
Described in described the 2nd wavelength ratio, the 1st wavelength is short.
15. massaging devices according to claim 13, is characterized in that:
Part or all of described posting field comprises recording materials,
For described the 1st wavelength, the symbol of the real part of the symbol of the real part of the dielectric constant of described recording materials under recording status and the described recording materials dielectric constant under recording status is not identical.
16. massaging devices according to claim 10, is characterized in that:
Described light source, comprises the single wavelength light source that penetrates recording light and reproduced light,
Described near field of light producing component, the near field of light producing component that comprises recording near field of light producing component and regeneration use.
17. massaging devices according to claim 13, is characterized in that: the length compared with length direction compared with the near field of light producing component of the use of regenerating described in the Length Ratio of length direction of described recording near field of light producing component is long.
18. massaging devices according to claim 13, is characterized in that: the near field of light producing component of described recording near field of light producing component and described regeneration use configures at the back side each other oppositely.
19. massaging devices according to claim 10, is characterized in that:
Described light source, comprises and penetrates the recording light and the double-wavelength light source with the reproduced light of 2nd wavelength different from described the 1st wavelength with the 1st wavelength,
Described near field of light producing component doubles as the near field of light producing component of recording near field of light producing component and regeneration use.
The manufacture method of 20. 1 kinds of information recording carriers, for the manufacture of the information recording carrier that possesses substrate, is characterized in that comprising:
The posting field that formation comprises recording materials is the step of the recording layer of island arrangement;
The 1st resonance that is formed for strengthening plasma resonance between described substrate and described recording layer strengthens the step of film, and wherein, the symbol that described the 1st resonance strengthens the real part that film comprises dielectric constant is negative material.
21. 1 kinds of massaging devices, carry out recording of information or regeneration to the information recording carrier that possesses substrate and have a recording layer of the posting field that island arranges on described substrate, it is characterized in that comprising:
Light source;
Have and described posting field between produce the near field of light producing component of the resonance part of plasma resonance, wherein,
Described resonance part, is mapped to described near field of light producing component by the ejaculation illumination from described light source, produces plasma resonance,
With respect to the configuration plane of described posting field, the amplitude of described near field of light polarized light component is in the vertical direction greater than the amplitude of polarized light component in the horizontal direction,
Utilize at least a portion of the near field of light that described resonance part produces in described posting field recorded information.
CN201280033257.6A 2011-08-09 2012-08-07 Information recording medium, information device, and method for producing information recording medium Pending CN103650042A (en)

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9552833B2 (en) * 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
US9620150B2 (en) * 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
KR101674562B1 (en) * 2015-05-21 2016-11-09 광운대학교 산학협력단 Omnidirectional color filter based on a nano-resonator incorporating a dielectric overlay
CN108779982B (en) * 2016-02-01 2020-10-09 赫普塔冈微光有限公司 Lighting module and optoelectronic system
KR101854328B1 (en) * 2017-02-28 2018-06-14 광운대학교 산학협력단 Linear variable color filter based on a tapered etalon and method of manufacturing thereof
JP7297635B2 (en) 2019-10-15 2023-06-26 相互印刷株式会社 packaging box

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200425128A (en) * 2003-05-02 2004-11-16 Ind Tech Res Inst Ultra high density recordable optical information record medium and its manufacturing method
WO2007111304A1 (en) * 2006-03-29 2007-10-04 Matsushita Electric Industrial Co., Ltd. Proximity field optical head, proximity field optical head device, proximity field optical information device, and proximity field optical information system
US20090207703A1 (en) * 2002-11-01 2009-08-20 Hitachi, Ltd. Optical near-field generator and recording apparatus using the optical near-field generator
CN101635147A (en) * 2008-06-11 2010-01-27 索尼株式会社 Signal detecting device and signal detecting method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002063722A (en) * 2000-08-21 2002-02-28 Taiyo Yuden Co Ltd Method for recording optical information and optical information recording medium
KR100625630B1 (en) 2002-02-27 2006-09-20 후지쯔 가부시끼가이샤 Optical recording medium, its recording/reproduction apparatus, its storage apparatus, and its recording/reproduction method
US6896946B2 (en) * 2002-06-06 2005-05-24 Ritek Corporation Initiation-free super-resolution optical medium
JP3837508B2 (en) * 2002-06-14 2006-10-25 独立行政法人産業技術総合研究所 Surface plasmon excitable noble metal fine particle thin film
JP2004213702A (en) 2002-12-26 2004-07-29 Ricoh Co Ltd Optical information recorder, optical information recording medium and manufacturing method of flat-panel type probe array
US20050221228A1 (en) * 2004-03-30 2005-10-06 General Electric Company Near field optical storage mask layer, disk, and fabrication method
EP1950759A1 (en) * 2007-01-23 2008-07-30 Deutsche Thomson OHG Optical storage medium with a mask layer providing a super resolution near filed effect and respective manufacturing method
CN102379006A (en) 2009-04-09 2012-03-14 松下电器产业株式会社 Information recording medium and method for manufacturing information recording medium
US20120113772A1 (en) 2009-07-21 2012-05-10 Teruhiro Shiono Information recording medium, optical information recording and reproducing apparatus, optical information recording and reproducing method and manufacturing method of information recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090207703A1 (en) * 2002-11-01 2009-08-20 Hitachi, Ltd. Optical near-field generator and recording apparatus using the optical near-field generator
TW200425128A (en) * 2003-05-02 2004-11-16 Ind Tech Res Inst Ultra high density recordable optical information record medium and its manufacturing method
WO2007111304A1 (en) * 2006-03-29 2007-10-04 Matsushita Electric Industrial Co., Ltd. Proximity field optical head, proximity field optical head device, proximity field optical information device, and proximity field optical information system
CN101635147A (en) * 2008-06-11 2010-01-27 索尼株式会社 Signal detecting device and signal detecting method

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