CN103647257B - High-power high voltage power supply fast short-circuit protective device - Google Patents
High-power high voltage power supply fast short-circuit protective device Download PDFInfo
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- CN103647257B CN103647257B CN201310685722.0A CN201310685722A CN103647257B CN 103647257 B CN103647257 B CN 103647257B CN 201310685722 A CN201310685722 A CN 201310685722A CN 103647257 B CN103647257 B CN 103647257B
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- 230000001681 protective effect Effects 0.000 title claims abstract description 10
- 238000004804 winding Methods 0.000 claims abstract description 153
- 210000001367 artery Anatomy 0.000 claims abstract description 25
- 210000003462 vein Anatomy 0.000 claims abstract description 25
- 230000006641 stabilisation Effects 0.000 claims abstract description 24
- 238000011105 stabilization Methods 0.000 claims abstract description 24
- 238000005070 sampling Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
A kind of high-power high voltage power supply fast short-circuit protective device, belongs to the power supply branch of field of power electronics. Six electronic AC switch K11, K12, K21, K22, K31, K32, three hall current detectors? H11, H21, H31, current sampling power tube driving control unit, 12 arteries and veins rectification circuits, adjust pipe and voltage stabilization and current stabilization control module. Three phase worker power A, B, C are connected with one end of high power AC electronic switch K11, K21, K31 respectively, the other end of electronic switch K11, K21, K31 is connected with one end of hall current detector H11, H21, H31 respectively, and the other end of hall current detector H11, H21, H31 is connected with the a1 end of the elementary a phase winding of high-tension transformer, the b1 end of b phase winding, the c1 end of c phase winding respectively; When this power supply overload or short circuit, when this power supply generation overload or short circuit, energy fast shut-off alternating current input power supplying and fast release transformer electromagnetic energy are with protection machine internal power device or load equipment.
Description
Technical field
The invention belongs to the power supply branch of field of power electronics, while being to provide a kind of high-power high voltage power supply generation overload or short circuit, fast shut-off alternating current input power supplying and the quick transformer electromagnetic energy that discharges are to protect a kind of device of machine internal power device or load equipment.
Background technology
Traditional high-power high voltage power supply is generally all forbidden short circuit, because semiconductor power device, in the time that the time that overload occurs exceedes tens microseconds, just may cause the damage of device. And traditional high-power high voltage power supply occurs to transship or the guard method of short circuit is to rely on the contact of contactor to disconnect or turn-off controllable silicon to cut off input power frequency supply; because the time of cutting off power frequency supply is between ten milliseconds ~ a few tens of milliseconds, the large power semiconductor device to high-power high voltage power supply inside or the large power semiconductor device of load equipment inside do not have effective protective effect. Secondly; traditional low pressure small-power power usually adopts the method for current limliting to realize power source short-circuit protection; but this simple method is entirely ineffective for the short-circuit protection of high-power high voltage power supply; because at transcient short circuit time; the high voltage being provided by electrical network and high-tension transformer and large electric current can all be added on the adjustment pipe of power supply, make to adjust pipe Instantaneous habitat destruction. In the use procedure of high-power high voltage power supply, usually because power supply internal fault, user load internal fault, user are in the process of debugging equipment of itself, because of manual operation careless etc. former thereby cause power supply overload or short circuit, thereby frequent generation of thing meeting of damaging power supply itself or damaging subscriber equipment, such as klystron of some loads etc., it is worth more than hundreds of thousands unit, is very large once damage its economic loss. Therefore, need one fast and effectively safeguard measure come protection power source equipment or subscriber equipment.
Summary of the invention
In order to address the above problem, the invention provides a kind of high-power high voltage power supply fast short-circuit protective device.
The present invention includes a high-power high voltage transformer, six electronic AC switch K11, K12, K21, K22, K31, K32, three hall current detector H11, H21, H31, current sampling power tube driving control unit, 12 arteries and veins rectification circuits, adjust pipe and voltage stabilization and current stabilization control module. three phase worker power A, B, C respectively with high power AC electronic switch K11, K21, one end of K31 is connected, described electronic switch K11, K21, the other end of K31 respectively with hall current detector H11, H21, one end of H31 is connected, described hall current detector H11, H21, the other end of H31 respectively with the a1 end of the elementary a phase winding of high-tension transformer, the b1 end of b phase winding, the c1 end of c phase winding is connected, the a2 end of the elementary a phase winding of described high-tension transformer is connected with the b1 end of b phase winding, the b2 end of the b phase winding of described high-tension transformer is connected with the c1 end of c phase winding, the c2 end of the c phase winding of described high-tension transformer is connected with the a1 end of a phase winding,
In one end of the a1 termination electronic switch K12 of the elementary a phase winding of high-tension transformer, the a2 of the elementary a phase winding of high-tension transformer end described in another termination of described electronic switch K12, one end of the b1 termination electronic switch K22 of the elementary b phase winding of described high-tension transformer, the b2 of the elementary b phase winding of high-tension transformer end described in another termination of described electronic switch K22; One end of the c1 termination electronic switch K32 of the elementary c phase winding of described high-tension transformer, the c2 of the elementary c phase winding of high-tension transformer end described in another termination of described electronic switch K32. Secondary windings a3a4, b3b4, the c3c4 of described high-tension transformer press delta connection, its three outputs are connected with three inputs of 12 arteries and veins rectification circuits, secondary windings a5a6, b5b6, the c5c6 of described high-tension transformer press star connection, its three outputs are connected with another three inputs of described 12 arteries and veins rectification circuits, the output plus terminal of described 12 arteries and veins rectification circuits is connected with the colelctor electrode of adjusting pipe V41, and the emitter stage of described adjustment pipe V41 is connected with power supply output plus terminal. The output negative terminal of described 12 arteries and veins rectification circuits is connected with described power supply output negative terminal, and described adjustment pipe V41 is insulated gate bipolar transistor.
The output signal of described hall current detector H11, H21, H31 is sent into current sampling power tube driver element, the output signal of described current sampling power tube driver element is sent into the control end of electronic switch K11, K21, K31, K12, K22, K32, the on off operating mode of described electronic switch K11, K21, K31, K12, K22, K32 is subject to the control of described current sampling power tube driver element, the output signal of voltage stabilization and current stabilization control module is sent into the grid of adjusting pipe V41, and the duty of described adjustment pipe V41 is subject to the control of described voltage stabilization and current stabilization control module.
Quick electronic AC switch K11 of the present invention, K21, K31, K12, K22, K32, be made up of a single-phase rectification bridge and a high-power switch device respectively. Described single-phase rectification bridge is made up of four diodes, and described high-power switch device is insulated gate bipolar transistor. Described 12 arteries and veins rectification circuits are made up of two groups of three-phase commutation bridges, and described adjustment pipe V41 is insulated gate bipolar transistor.
The positive pole of A phase power frequency supply and diode D11, the negative pole of diode D12 is connected, the negative pole of described diode D11, the negative pole of diode D13 is connected with the colelctor electrode of insulated gate bipolar transistor V11, the positive pole of described diode D12, the positive pole of diode D14 is connected with the emitter stage of described insulated gate bipolar transistor V11, the negative pole of described diode D14, the positive pole of described diode D13 is connected with one end of hall current detector H11, the other end of described hall current detector H11 is connected with the a1 end of the elementary a phase winding of high-tension transformer, the a2 end of the elementary a phase winding of described high-tension transformer and the positive pole of diode D15, the negative pole of diode D16 is connected, the negative pole of described diode D15, the negative pole of diode D17 is connected with the colelctor electrode of insulated gate bipolar transistor V12, the positive pole of diode D16, the positive pole of diode D18 is connected with the emitter stage of described insulated gate bipolar transistor V12, the negative pole of described diode D18, the positive pole of described diode D17 is connected with the a1 end of the elementary a phase winding of described high-tension transformer.
The positive pole of B phase power frequency supply and diode D21, the negative pole of diode D22 is connected, the negative pole of described diode D21, the negative pole of diode D23 is connected with the colelctor electrode of insulated gate bipolar transistor V21, the positive pole of described diode D22, the positive pole of diode D24 is connected with the emitter stage of described insulated gate bipolar transistor V21, the negative pole of described diode D24, the positive pole of described diode D23 is connected with one end of hall current detector H21, the other end of described hall current detector H21 is connected with the b1 end of the elementary b phase winding of high-tension transformer, the b2 end of the elementary b phase winding of described high-tension transformer and the positive pole of diode D25, the negative pole of diode D26 is connected, the negative pole of described diode D25, the negative pole of diode D27 is connected with the colelctor electrode of insulated gate bipolar transistor V22, the positive pole of diode D26, the positive pole of diode D28 is connected with the emitter stage of described insulated gate bipolar transistor V22, the negative pole of described diode D28, the positive pole of described diode D27 is connected with the b1 end of the elementary b phase winding of high-tension transformer.
The positive pole of C phase power frequency supply and diode D31, the negative pole of diode D32 is connected, the negative pole of described diode D31, the negative pole of diode D33 is connected with the colelctor electrode of insulated gate bipolar transistor V31, the positive pole of described diode D32, the positive pole of diode D34 is connected with the emitter stage of described insulated gate bipolar transistor V31, the negative pole of described diode D34, the positive pole of described diode D33 is connected with one end of described hall current detector H31, the other end of described hall current detector H31 is connected with the c1 end of the elementary c phase winding of high-tension transformer, the c2 end of the elementary c phase winding of described high-tension transformer and the positive pole of diode D35, the negative pole of diode D36 is connected, the negative pole of described diode D35, the negative pole of diode D37 is connected with the colelctor electrode of insulated gate bipolar transistor V32, the positive pole of diode D36, the positive pole of diode D38 is connected with the emitter stage of described insulated gate bipolar transistor V32, the negative pole of described diode D38, the positive pole of described diode D37 is connected with the c1 end of the elementary c phase winding of described high-tension transformer.
The output signal of hall current detector H11, H21, H31 is sent into current sampling power tube driver element, the output signal of described current sampling power tube driver element is sent into the grid of insulated gate bipolar transistor V11, V21, V31, the a2 end of the elementary a phase winding of high-tension transformer is connected with the b1 end of b phase winding, the b2 end of the elementary b phase winding of described high-tension transformer is connected with the c1 end of c phase winding, and the c2 end of the elementary c phase winding of described high-tension transformer is connected with the a1 end of a phase winding.
The secondary total a3a4 of high-tension transformer of the present invention, b3b4, c3c4, a5a6, b5b6, six windings of c5c6, the a3 end of the secondary a3a4 winding of described high-tension transformer and the c4 end of c3c4 winding, the anode of diode D41, the negative terminal of diode D42 is connected, the a4 end of the secondary a3a4 winding of described high-tension transformer and the b3 end of b3b4 winding, the positive pole of diode D43, the negative pole of diode D44 is connected, the b4 end of the secondary b3b4 winding of described high-tension transformer and the c3 end of c3c4 winding, the positive pole of diode D45, the negative pole of diode D46 is connected, the negative pole of the negative pole of described diode D41 and described diode D43, the negative pole of described diode D45, the colelctor electrode of insulated gate bipolar transistor V41 is connected, and the emitter stage of described insulated gate bipolar transistor V41 is connected with power supply output plus terminal, the positive pole of the positive pole of described diode D42 and described diode D44, the positive pole of described diode D46, the negative pole of diode D51, the negative pole of diode D53, the negative pole of diode D55 is connected, the a5 end of the secondary a5a6 winding of described high-tension transformer and the anode of described diode D51, the negative terminal of diode D52 is connected, the b5 end of the secondary b5b6 winding of described high-tension transformer and the positive pole of described diode D53, the negative pole of diode D54 is connected, the c5 end of the secondary c5c6 winding of described high-tension transformer and the positive pole of described diode D55, the negative pole of diode D56 is connected, the positive pole of the positive pole of described diode D52 and described diode D54, the positive pole of described diode D56, described power supply output negative terminal is connected, the a6 end of the secondary a5a6 winding of described high-tension transformer and the b6 end of b5b6 winding, the c6 end of c5c6 winding is connected.
A kind of high-power high voltage power supply of the present invention fast short-circuit protective device, specific works principle: below taking A mutually for example is narrated operation principle. in the time that power supply is normally worked, insulated gate bipolar transistor V11 conducting, insulated gate bipolar transistor V12 turn-offs. when in the half period of the current direction high-tension transformer of A phase power frequency supply, A phase power current flows to the colelctor electrode of insulated gate bipolar transistor V11 by diode D11, then flows to the initiating terminal a1 of a phase armature winding of three-phase high-voltage transformer through emitter stage, D14, the hall current detector H11 of V11. and work as in the half period of current direction A phase power frequency supply of high-tension transformer, the electric current that the a1 end of a phase armature winding of high-tension transformer flows out, flow to the colelctor electrode of insulated gate bipolar transistor V11 by hall current detector H11, diode D13, then flow to A phase power frequency supply through emitter stage, the D12 of V11. therefore,, in the situation that described insulated gate bipolar transistor V11 opens, although there is diode D11, D12, D13, D14 in circuit, this does not affect and can measure transmission between A phase power supply and described high-voltage high-power transformer. due in the time that power supply is normally worked, insulated gate bipolar transistor V12 turn-offs, and therefore diode D15, D16, D17, D18 all locate off state, inoperative in circuit. due to circuit symmetrical, in the time that power supply is normally worked, the B of power frequency supply, C two-phase and described high-tension transformer b, duty and the A of two armature windings of c are similar, diode D21, D22, D23, D24, D31, D32, D33, D34 and D11, D12, D13, the duty of D14 is similar, diode D25, D26, D27, D28, D35, D36, D37, D38 and D15, D16, D17, the duty of D18 is similar, hall current detector H21, the duty of H31 and H11 is similar, insulated gate bipolar transistor V21, the duty of V31 and V11 is similar, insulated gate bipolar transistor V22, the duty of V32 and V12 is similar, no longer re-cover narration.
Secondary at high-tension transformer, there is two group of three phase winding, wherein a3a4, b3b4, tri-windings of c3c4 are pressed three-phase delta connection and diode D41, D42, D43, D44, D45, D46 forms three-phase six arteries and veins rectifier bridges, and the secondary windings a5a6 of described high-tension transformer, b5b6, c5c6 is by star connection and diode D51, D52, D53, D54, D55, D56 forms another three-phase six arteries and veins rectifier bridges, these two three-phases, six arteries and veins rectifier bridges are in series and form three-phase 12 arteries and veins rectifier bridges, output plus terminal that the output plus terminal electric current of this 12 arteries and veins rectifier bridge flows to power supply through adjustment pipe V41 is for subscriber equipment, and the output negative terminal of this 12 arteries and veins rectifier bridge and the output negative terminal of power supply are connected, for subscriber equipment. the grid of described adjustment pipe V41 is subject to the control of voltage stabilization and current stabilization control module, makes power work at voltage stabilization and current stabilization state.
In the time there is overload or short circuit in power supply, make the secondary windings electric current of high-tension transformer obviously become large, and then the primary winding current that makes high-tension transformer obviously becomes large, and then make the electric current that flows through hall current detector H11 obviously become large, this current signal is delivered to current sampling power tube driving control unit, current sampling power tube driving control unit is sent signal, in several microseconds, turn-off fast insulated gate bipolar transistor V11, make diode D11, D12, D13, D14 all locate off state, fast shut-off A phase power current. now, insulated gate bipolar transistor V12 is fast conducting in several microseconds, now, if the electromotive force that high-tension transformer a phase winding ejects, the electromotive force of its a1 end is held higher than a2, and the electric current of a1 end will flow to the colelctor electrode of insulated gate bipolar transistor V12 by diode D17, again through the a2 end of the emitter stage of V12, a phase armature winding that D16 flows to high-tension transformer, gesture is same by a1, and the electromotive force short circuit at a2 two ends, discharges rapidly magnetic energy in high-tension transformer. if there is the moment of overload or short circuit at power supply, the electromotive force that high-tension transformer a phase winding ejects, the electromotive force of its a2 end is held higher than a1, the electric current of a2 end will flow to the colelctor electrode of insulated gate bipolar transistor V12 by diode D15, again through the emitter stage of V12, D18 flows to the a1 end of a phase armature winding of high-tension transformer, also gesture is same by a2, the electromotive force short circuit at a1 two ends, discharge rapidly the magnetic energy in high-tension transformer, avoid because high-power transformer magnetic energy discharges by transformer secondary output winding, thereby transformer secondary output winding inspires high voltage and damages power supply internal components or subscriber equipment internal components, reach technical purpose of the present invention. due to circuit symmetrical, in the time there is overload or short circuit in power supply, the B of power frequency supply, C two-phase and described high-tension transformer b, duty and the A of two armature windings of c are similar, diode D21, D22, D23, D24, D31, D32, D33, D34 and D11, D12, D13, the duty of D14 is similar, diode D25, D26, D27, D28, D35, D36, D37, D38 and D15, D16, D17, the duty of D18 is similar, hall current detector H21, the duty of H31 and H11 is similar, insulated gate bipolar transistor V21, the duty of V31 and V11 is similar, insulated gate bipolar transistor V22, the duty of V32 and V12 is similar.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the present invention;
Fig. 2 is a kind of electrical block diagram of the present invention.
Detailed description of the invention
As shown in Figure 1, this high-power high voltage power supply fast short-circuit protective device, comprise a high-power high voltage transformer 1, six electronic AC switch K11, K12, K21, K22, K31, K32, three hall current detector H11, H21, H31, current sampling power tube driving control unit 2, ten two arteries and veins rectification circuits 3, adjust pipe V41 and voltage stabilization and current stabilization control module 5, three phase worker power A, B, C respectively with high power AC electronic switch K11, K21, one end of K31 is connected, electronic switch K11, K21, the other end of K31 respectively with hall current detector H11, H21, one end of H31 is connected, hall current detector H11, H21, the other end of H31 respectively with the a1 end of the elementary a phase winding of high-tension transformer, the b1 end of b phase winding, the c1 end of c phase winding is connected, the a2 end of the elementary a phase winding of high-tension transformer 1 is connected with the b1 end of b phase winding, the b2 end of the b phase winding of high-tension transformer 1 is connected with the c1 end of c phase winding, the c2 end of the c phase winding of high-tension transformer 1 is connected with the a1 end of a phase winding,
In one end of the a1 termination electronic switch K12 of the elementary a phase winding of high-tension transformer 1, the a2 end of the elementary a phase winding of another termination high-tension transformer 1 of electronic switch K12, one end of the b1 termination electronic switch K22 of the elementary b phase winding of high-tension transformer, the b2 end of the elementary b phase winding of another termination high-tension transformer 1 of electronic switch K22; One end of the c1 termination electronic switch K32 of the elementary c phase winding of high-tension transformer 1, the c2 end of the elementary c phase winding of another termination high-tension transformer of electronic switch K32. Secondary windings a3a4, b3b4, the c3c4 of high-tension transformer 1 press delta connection, its three outputs are connected with three inputs of 12 arteries and veins rectification circuits 3, secondary windings a5a6, b5b6, the c5c6 of high-tension transformer 1 press star connection, its three outputs are connected with another three inputs of 12 arteries and veins rectification circuits 3, the output plus terminal of 12 arteries and veins rectification circuits 3 is connected with the colelctor electrode of adjusting pipe V41, and the emitter stage of adjusting pipe V41 is connected with power supply output plus terminal. The output negative terminal of 12 arteries and veins rectification circuits 3 is connected with power supply output negative terminal, and adjusting pipe V41 is insulated gate bipolar transistor.
The output signal of hall current detector H11, H21, H31 is sent into current sampling power tube driver element 2, the output signal of current sampling power tube driver element 2 is sent into the control end of electronic switch K11, K21, K31, K12, K22, K32, the on off operating mode of electronic switch K11, K21, K31, K12, K22, K32 is controlled by current sampling power tube driver element 2, the output signal of voltage stabilization and current stabilization control module 5 is sent into the grid of adjusting pipe V41, and the duty of adjusting pipe V41 is controlled by described voltage stabilization and current stabilization control module 5.
As shown in Figure 1, 2, electronic AC switch K11, K21, K31, K12, K22, K32 fast, formed by a single-phase rectification bridge 6 and a high-power switch device 7 respectively, single-phase rectification bridge 6 is made up of four diodes 8, high-power switch device 7 is insulated gate bipolar transistor, 12 arteries and veins rectification circuits 3 are made up of two groups of three-phase commutation bridges 9, and adjusting pipe V41 is insulated gate bipolar transistor.
The positive pole of A phase power frequency supply and diode D11, the negative pole of diode D12 is connected, the negative pole of diode D11, the negative pole of diode D13 is connected with the colelctor electrode of insulated gate bipolar transistor V11, the positive pole of diode D12, the positive pole of diode D14 is connected with the emitter stage of insulated gate bipolar transistor V11, the negative pole of diode D14, the positive pole of diode D13 is connected with one end of hall current detector H11, the other end of hall current detector H11 is connected with the a1 end of the elementary a phase winding of high-tension transformer, the a2 end of the elementary a phase winding of high-tension transformer 1 and the positive pole of diode D15, the negative pole of diode D16 is connected, the negative pole of diode D15, the negative pole of diode D17 is connected with the colelctor electrode of insulated gate bipolar transistor V12, the positive pole of diode D16, the positive pole of diode D18 is connected with the emitter stage of insulated gate bipolar transistor V12, the negative pole of diode D18, the positive pole of diode D17 is connected with the a1 end of the elementary a phase winding of high-tension transformer 1.
The positive pole of B phase power frequency supply and diode D21, the negative pole of diode D22 is connected, the negative pole of diode D21, the negative pole of diode D23 is connected with the colelctor electrode of insulated gate bipolar transistor V21, the positive pole of diode D22, the positive pole of diode D24 is connected with the emitter stage of described insulated gate bipolar transistor V21, the negative pole of diode D24, the positive pole of diode D23 is connected with one end of hall current detector H21, the other end of hall current detector H21 is connected with the b1 end of the elementary b phase winding of high-tension transformer 1, the b2 end of the elementary b phase winding of high-tension transformer 1 and the positive pole of diode D25, the negative pole of diode D26 is connected, the negative pole of diode D25, the negative pole of diode D27 is connected with the colelctor electrode of insulated gate bipolar transistor V22, the positive pole of diode D26, the positive pole of diode D28 is connected with the emitter stage of described insulated gate bipolar transistor V22, the negative pole of diode D28, the positive pole of diode D27 is connected with the b1 end of the elementary b phase winding of high-tension transformer 1.
The positive pole of C phase power frequency supply and diode D31, the negative pole of diode D32 is connected, the negative pole of diode D31, the negative pole of diode D33 is connected with the colelctor electrode of insulated gate bipolar transistor V31, the positive pole of diode D32, the positive pole of diode D34 is connected with the emitter stage of described insulated gate bipolar transistor V31, the negative pole of diode D34, the positive pole of diode D33 is connected with one end of hall current detector H31, the other end of hall current detector H31 is connected with the c1 end of the elementary c phase winding of high-tension transformer 1, the c2 end of the elementary c phase winding of high-tension transformer 1 and the positive pole of diode D35, the negative pole of diode D36 is connected, the negative pole of diode D35, the negative pole of diode D37 is connected with the colelctor electrode of insulated gate bipolar transistor V32, the positive pole of diode D36, the positive pole of diode D38 is connected with the emitter stage of described insulated gate bipolar transistor V32, the negative pole of diode D38, the positive pole of diode D37 is connected with the c1 end of the elementary c phase winding of high-tension transformer.
The output signal of hall current detector H11, H21, H31 is sent into current sampling power tube driver element 2, the output signal of current sampling power tube driver element 2 is sent into the grid of insulated gate bipolar transistor V11, V21, V31, the a2 end of the elementary a phase winding of high-tension transformer 1 is connected with the b1 end of b phase winding, the b2 end of the elementary b phase winding of high-tension transformer is connected with the c1 end of c phase winding, and the c2 end of the elementary c phase winding of high-tension transformer 1 is connected with the a1 end of a phase winding.
As Fig. 1, shown in 2, the secondary total a3a4 of high-tension transformer 1, b3b4, c3c4, a5a6, b5b6, six windings of c5c6, the a3 end of the secondary a3a4 winding of high-tension transformer 1 and the c4 end of c3c4 winding, the anode of diode D41, the negative terminal of diode D42 is connected, the a4 end of the secondary a3a4 winding of high-tension transformer 1 and the b3 end of b3b4 winding, the positive pole of diode D43, the negative pole of diode D44 is connected, the b4 end of the secondary b3b4 winding of high-tension transformer 1 and the c3 end of c3c4 winding, the positive pole of diode D45, the negative pole of diode D46 is connected, the negative pole of the negative pole of diode D41 and described diode D43, the negative pole of diode D45, the colelctor electrode of insulated gate bipolar transistor V41 is connected, and the emitter stage of insulated gate bipolar transistor V41 is connected with power supply output plus terminal, the positive pole of the positive pole of diode D42 and diode D44, the positive pole of diode D46, the negative pole of diode D51, the negative pole of diode D53, the negative pole of diode D55 is connected, the a5 end of the secondary a5a6 winding of high-tension transformer 1 and the anode of diode D51, the negative terminal of diode D52 is connected, the b5 end of the secondary b5b6 winding of high-tension transformer and the positive pole of diode D53, the negative pole of diode D54 is connected, the c5 end of the secondary c5c6 winding of high-tension transformer and the positive pole of diode D55, the negative pole of diode D56 is connected, the positive pole of the positive pole of diode D52 and diode D54, the positive pole of diode D56, power supply output negative terminal is connected, the a6 end of the secondary a5a6 winding of high-tension transformer 1 and the b6 end of b5b6 winding, the c6 end of c5c6 winding is connected.
Claims (3)
1. a high-power high voltage power supply fast short-circuit protective device, it is characterized in that: comprise a high-power high voltage transformer, six electronic AC switch K11, K12, K21, K22, K31, K32, three hall current detector H11, H21, H31, current sampling power tube driving control unit, 12 arteries and veins rectification circuits, adjust pipe and voltage stabilization and current stabilization control module, be further characterized in that three phase worker power A, B, C respectively with high power AC electronic switch K11, K21, one end of K31 is connected, described electronic switch K11, K21, the other end of K31 respectively with hall current detector H11, H21, one end of H31 is connected, described hall current detector H11, H21, the other end of H31 respectively with the a1 end of the elementary a phase winding of high-tension transformer, the b1 end of b phase winding, the c1 end of c phase winding is connected, the a2 end of the elementary a phase winding of described high-tension transformer is connected with the b1 end of b phase winding, the b2 end of the b phase winding of described high-tension transformer is connected with the c1 end of c phase winding, the c2 end of the c phase winding of described high-tension transformer is connected with the a1 end of a phase winding,
In one end of the a1 termination electronic switch K12 of the elementary a phase winding of high-tension transformer, the a2 of the elementary a phase winding of high-tension transformer end described in another termination of described electronic switch K12, one end of the b1 termination electronic switch K22 of the elementary b phase winding of described high-tension transformer, the b2 of the elementary b phase winding of high-tension transformer end described in another termination of described electronic switch K22; One end of the c1 termination electronic switch K32 of the elementary c phase winding of described high-tension transformer, the c2 of the elementary c phase winding of high-tension transformer end described in another termination of described electronic switch K32; Secondary windings a3a4, b3b4, the c3c4 of described high-tension transformer press delta connection, its three outputs are connected with three inputs of 12 arteries and veins rectification circuits, secondary windings a5a6, b5b6, the c5c6 of described high-tension transformer press star connection, its three outputs are connected with another three inputs of described 12 arteries and veins rectification circuits, the output plus terminal of described 12 arteries and veins rectification circuits is connected with the colelctor electrode of adjusting pipe V41, and the emitter stage of described adjustment pipe V41 is connected with power supply output plus terminal; The output negative terminal of described 12 arteries and veins rectification circuits is connected with described power supply output negative terminal, and described adjustment pipe V41 is insulated gate bipolar transistor;
The output signal of described hall current detector H11, H21, H31 is sent into current sampling power tube driver element, the output signal of described current sampling power tube driver element is sent into the control end of electronic switch K11, K21, K31, K12, K22, K32, the on off operating mode of described electronic switch K11, K21, K31, K12, K22, K32 is subject to the control of described current sampling power tube driver element, the output signal of voltage stabilization and current stabilization control module is sent into the grid of adjusting pipe V41, and the duty of described adjustment pipe V41 is subject to the control of described voltage stabilization and current stabilization control module.
2. require described a kind of high-power high voltage power supply fast short-circuit protective device circuit to it is characterized in that described quick electronic AC switch K11, K21, K31, K12, K22, K32 according to right 1, formed by a single-phase rectification bridge and a high-power switch device respectively, described single-phase rectification bridge is made up of four diodes, described high-power switch device is insulated gate bipolar transistor, described 12 arteries and veins rectification circuits are made up of two groups of three-phase commutation bridges, and described adjustment pipe V41 is insulated gate bipolar transistor;
The positive pole of A phase power frequency supply and diode D11, the negative pole of diode D12 is connected, the negative pole of described diode D11, the negative pole of diode D13 is connected with the colelctor electrode of insulated gate bipolar transistor V11, the positive pole of described diode D12, the positive pole of diode D14 is connected with the emitter stage of described insulated gate bipolar transistor V11, the negative pole of described diode D14, the positive pole of described diode D13 is connected with one end of hall current detector H11, the other end of described hall current detector H11 is connected with the a1 end of the elementary a phase winding of high-tension transformer, the a2 end of the elementary a phase winding of described high-tension transformer and the positive pole of diode D15, the negative pole of diode D16 is connected, the negative pole of described diode D15, the negative pole of diode D17 is connected with the colelctor electrode of insulated gate bipolar transistor V12, the positive pole of diode D16, the positive pole of diode D18 is connected with the emitter stage of described insulated gate bipolar transistor V12, the negative pole of described diode D18, the positive pole of described diode D17 is connected with the a1 end of the elementary a phase winding of described high-tension transformer,
The positive pole of B phase power frequency supply and diode D21, the negative pole of diode D22 is connected, the negative pole of described diode D21, the negative pole of diode D23 is connected with the colelctor electrode of insulated gate bipolar transistor V21, the positive pole of described diode D22, the positive pole of diode D24 is connected with the emitter stage of described insulated gate bipolar transistor V21, the negative pole of described diode D24, the positive pole of described diode D23 is connected with one end of hall current detector H21, the other end of described hall current detector H21 is connected with the b1 end of the elementary b phase winding of high-tension transformer, the b2 end of the elementary b phase winding of described high-tension transformer and the positive pole of diode D25, the negative pole of diode D26 is connected, the negative pole of described diode D25, the negative pole of diode D27 is connected with the colelctor electrode of insulated gate bipolar transistor V22, the positive pole of diode D26, the positive pole of diode D28 is connected with the emitter stage of described insulated gate bipolar transistor V22, the negative pole of described diode D28, the positive pole of described diode D27 is connected with the b1 end of the elementary b phase winding of high-tension transformer,
The positive pole of C phase power frequency supply and diode D31, the negative pole of diode D32 is connected, the negative pole of described diode D31, the negative pole of diode D33 is connected with the colelctor electrode of insulated gate bipolar transistor V31, the positive pole of described diode D32, the positive pole of diode D34 is connected with the emitter stage of described insulated gate bipolar transistor V31, the negative pole of described diode D34, the positive pole of described diode D33 is connected with one end of described hall current detector H31, the other end of described hall current detector H31 is connected with the c1 end of the elementary c phase winding of high-tension transformer, the c2 end of the elementary c phase winding of described high-tension transformer and the positive pole of diode D35, the negative pole of diode D36 is connected, the negative pole of described diode D35, the negative pole of diode D37 is connected with the colelctor electrode of insulated gate bipolar transistor V32, the positive pole of diode D36, the positive pole of diode D38 is connected with the emitter stage of described insulated gate bipolar transistor V32, the negative pole of described diode D38, the positive pole of described diode D37 is connected with the c1 end of the elementary c phase winding of described high-tension transformer,
The output signal of hall current detector H11, H21, H31 is sent into current sampling power tube driver element, the output signal of described current sampling power tube driver element is sent into the grid of insulated gate bipolar transistor V11, V21, V31, the a2 end of the elementary a phase winding of high-tension transformer is connected with the b1 end of b phase winding, the b2 end of the elementary b phase winding of described high-tension transformer is connected with the c1 end of c phase winding, and the c2 end of the elementary c phase winding of described high-tension transformer is connected with the a1 end of a phase winding.
3. a kind of high-power high voltage power supply fast short-circuit protective device circuit according to claim 1 is characterized in that the secondary total a3a4 of described high-tension transformer, b3b4, c3c4, a5a6, b5b6, six windings of c5c6, the a3 end of the secondary a3a4 winding of described high-tension transformer and the c4 end of c3c4 winding, the anode of diode D41, the negative terminal of diode D42 is connected, the a4 end of the secondary a3a4 winding of described high-tension transformer and the b3 end of b3b4 winding, the positive pole of diode D43, the negative pole of diode D44 is connected, the b4 end of the secondary b3b4 winding of described high-tension transformer and the c3 end of c3c4 winding, the positive pole of diode D45, the negative pole of diode D46 is connected, the negative pole of the negative pole of described diode D41 and described diode D43, the negative pole of described diode D45, the colelctor electrode of insulated gate bipolar transistor V41 is connected, and the emitter stage of described insulated gate bipolar transistor V41 is connected with power supply output plus terminal, the positive pole of the positive pole of described diode D42 and described diode D44, the positive pole of described diode D46, the negative pole of diode D51, the negative pole of diode D53, the negative pole of diode D55 is connected, the a5 end of the secondary a5a6 winding of described high-tension transformer and the anode of described diode D51, the negative terminal of diode D52 is connected, the b5 end of the secondary b5b6 winding of described high-tension transformer and the positive pole of described diode D53, the negative pole of diode D54 is connected, the c5 end of the secondary c5c6 winding of described high-tension transformer and the positive pole of described diode D55, the negative pole of diode D56 is connected, the positive pole of the positive pole of described diode D52 and described diode D54, the positive pole of described diode D56, described power supply output negative terminal is connected, the a6 end of the secondary a5a6 winding of described high-tension transformer and the b6 end of b5b6 winding, the c6 end of c5c6 winding is connected.
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| CN101075789A (en) * | 2007-04-05 | 2007-11-21 | 扬州双鸿电子有限公司 | Special DC constant voltage and current power supply for high-voltage speed controller |
| CN201577037U (en) * | 2009-09-04 | 2010-09-08 | 扬州双鸿电子有限公司 | Major loop of high-power switch power supply |
| CN201918904U (en) * | 2010-12-30 | 2011-08-03 | 易事特电力系统技术有限公司 | Circuit capable of realizing different voltage outputs by aid of series-parallel-connection of transformer taps |
| CN102255492A (en) * | 2011-07-26 | 2011-11-23 | 扬州双鸿电子有限公司 | Main circuit for increasing power factor of controllable silicon power supply |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101075789A (en) * | 2007-04-05 | 2007-11-21 | 扬州双鸿电子有限公司 | Special DC constant voltage and current power supply for high-voltage speed controller |
| CN201577037U (en) * | 2009-09-04 | 2010-09-08 | 扬州双鸿电子有限公司 | Major loop of high-power switch power supply |
| CN201918904U (en) * | 2010-12-30 | 2011-08-03 | 易事特电力系统技术有限公司 | Circuit capable of realizing different voltage outputs by aid of series-parallel-connection of transformer taps |
| CN102255492A (en) * | 2011-07-26 | 2011-11-23 | 扬州双鸿电子有限公司 | Main circuit for increasing power factor of controllable silicon power supply |
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