CN103628133A - Method for preparing aqueous solution of directional growth monocrystalline ZnO nano wall - Google Patents
Method for preparing aqueous solution of directional growth monocrystalline ZnO nano wall Download PDFInfo
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Abstract
The invention relates to a method for preparing an aqueous solution of a directional growth monocrystalline ZnO nano wall, which overcomes the polycrystalline non-directional problem existing in the prior art. The method adopts a solution comprising the steps as follows: a, the preparation of a ZnO seeding layer, Zn(CH3COO)2/2H2O and Al(NO3)3.9H2O which are at a molar ratio of 1:1 are mixed with ethylene glycol monomethylether and ethanol which are at a volume ratio of 1:1, the concentration of Zn<2+> is 0.05-0.5 mol/L, an ITO glass substrate containing a seeding layer is prepared for standby; b, growth of a ZnO nano wall, Zn(NO3)26H2O and (CH3)6N4 are prepared to a solution 0.025-0.05 mol/L in concentration according to a molar ratios of 1:1, and a white film layer on ITO glass is obtained. According to the method, via adding Al(NO3)3.9H2O into a seeding solution, the directional growth of the ZnO nano wall is realized; with the high-temperature thermal treatment of the ZnO, single-crystal ZnO nano wall is achieved, a more effective conductive channel is supplied to a gas sensor, and accordingly, the conductivity of the conductive channel is improved.
Description
Technical field
The present invention relates to the manufacturing technology field of high performance gas sensor, be specifically related to a kind of water solution preparation method of oriented growth single crystal ZnO nm wall.
Background technology
Gas sensor is widely used in the fields such as Environmental safety supervision, GA gas alarm and Production Flow Chart control.ZnO nano wall is a kind of good dimension sensor active material
[1-2]: vesicular structure makes it have the feature that volume is little, quality is light, specific surface area is large; Large specific surface area has been given again the mechanical flexibility of material excellence, and therefore, this has established good basis for the application of ZnO nano wall on gas sensor.
The ZnO nano wall of growing high-quality is study hotspot both domestic and external.The preparation method of ZnO nano wall has metal organic vapor phase epitaxy method (MOCVD) at present
[3-5], pulsed laser deposition (PLD)
[6], electrochemical deposition method
[7-8], carbothermic method [9], physical evaporation
[10-11], aqua-solution method
[12-14]deng.Compare other preparation methods, aque-chemical method (ACG) technology be developed under compared with mild temperature and low cost in various substrates (for example amorphous, monocrystalline, polycrystalline, transparent, guiding, flexible etc.) common method of the coating of metal oxides of growth function.The method does not need impressed field, without any need for template and tensio-active agent, without any accurate Tectonic effect.And aque-chemical method is because only have water to be used as solvent, the method is completely reproducible, safety with environmental sound, thereby the safety hazard of having avoided organic solvent and their potential toxicity of evaporation to cause completely.To sum up analyze aque-chemical method (ACG) and there are three large significantly advantages: 1) do not need the complex apparatus of High Temperature High Pressure, with low cost; 2) the high big area film forming that is suitable for of quality of forming film; 3) safe, workable, pollution-free.
In recent years, also there are some relevant relevant reports with aqua-solution method making ZnO nm wall.Huihui Huang etc.
[15]take Al paper tinsel as substrate, at the Zn of 0.05 M (NO
3)
2.6H
2the C of O and 0.05 M
6h
12n
4mixed growth liquid, in hydrothermal reaction kettle, at 90 ℃, grown ZnO nano wall, result of study is found the prolongation along with growth time, and the nm wall that multilayer has fold is stacked to together, the ZnO nano fence net network that formation mean thickness is 29nm, its crystalline structure is polycrystalline.Dae-Hee Kim
[16]deng not using any substrate, utilize 10 mM Zn (COOH)
2at 90 ℃, be dissolved in acetone soln and obtain Seed Layer in 5 minutes, then at 25 mM [Zn (NO
3)
2.6H
2o] and 25 mM [C
6h
12n
4] at 40 ℃, grown ZnO nano wall in mixed growth liquid (HMT), the thickness of the ZnO nano wall that the method obtains is less than 60nm, but the ZnO nano wall of the method growth is lodging shape, unrealized preferred orientation growth, photoluminescence performance test result also shows that prepared ZnO nano wall contains a large amount of defects.M.Kashif
[17]deng first hot evaporation in plastic thickness be respectively Ti film and the Au film of 20nm and 50nm, the Al film that then evaporation thick layer is 10nm again on Au film, finally with Zn (COOH)
2with ethanol be seed liquor, with [Zn (NO
3)
2.6H
2o] and [C
6h
12n
4] mixed solution (HMT) is that growth media has been prepared ZnO nano wall, and evaporating Al film needs expensive equipment.Zhiqiang Liang
[18]deng be first coated with the Zn (COOH) that last layer is prepared by sol-gel method on ito glass with spin-coating method
2coating, then will scribble Zn (COOH)
2the ito glass of coating is immersed in the (Zn (NO by 0.1M
3)
2.6H
2o) and 0.1M (C
6h
12n
4, in mixed growth liquid HMT) forming at 75 ℃ water-bath growth 3h, use CH
3it is 6.4 that COOH regulates its pH value.With after deionized water rinsing, be immersed in the KOH solution of 0.3M at 80 ℃ of water-baths growth 20min, last anneal 1h making ZnO nm wall at 350 ℃, but poor through the ZnO nano wall degree of crystallinity of KOH solution etching.
From above bibliographical information, can find out, aqua-solution method is divided into Seed Layer growth and growth media two steps of growing substantially, and wherein Al plays keying action in the process of growth of ZnO nano wall.Take Al as substrate, or evaporation thickness is nano level Al film on ito glass.If there is no adding of Al element in aqua-solution method preparation process, prepared ZnO nano wall just contains more defect, cannot realize oriented growth.
The gas sensing mechanism of ZnO belongs to surface resistivity control type.It is mainly that the information of abutment surface conductivity variations is checked and is touched gas molecule.For this N-type semiconductor gas sensor of ZnO, under working temperature due to the chemisorption of gas, at element surface, formed surface loss layer, ZnO can be with and bend approaching surface, crooked size depends on that main carrier density changes.With respect to the polycrystalline ZnO nano wall of non-directional growth, the single crystal ZnO nm wall of oriented growth has less defect, crystal boundary and impurity, for carrier transport, can provide more effective transmission path, to improve specific conductivity.Make it demonstrate more excellent gas-sensitive property.Therefore the single crystal ZnO nm wall of, preparing oriented growth seems particularly important for high performance gas sensor.
[1] Chul-Ho Lee, Yong-Jin Kim, Joohyung Lee, Young Joon Hong, Scalable network electrical devices using ZnO nanowalls, Nanotechnology 2011, 22 : 055205-055211.
[2] j.y. Lao，j.y. Huang，d.z.wang，ZnO nanowalls，Appl. Phys. A 78, 539–542 (2004)
[3] Sang-Woo Kim，Catalyst-free synthesis of ZnO nanowall networks on Si3N4 /Si substrates by metalorganic chemical vapor deposition, APPLIED PHYSICS LETTERS,2006, 88, 253114 2006
[4] C. C. Wu D. S. Wuu P. R. Lin T. N. Chen R. H. Horng， Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal–Organic Chemical Vapor Deposition。Nanoscale Res Lett (2009) 4:377–384。
[5] Ju HoLee , DongChanKim , SangYunKim，Microstructural characterization and formation mechanism of 211 top facets of ZnO-basednanowallstructures， Physica B 412 (2013) 12–16
[6] Chun Li, Guojia Fang,, Qiang Fu，Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures，Journal of Crystal Growth 292 (2006) 19–25
[7]D Pradhan, M Kumar, Y Ando and K T Leung，Efficient field emission from vertically grown planar ZnO nanowalls on an ITO–glass substrate，Nanotechnology 2008，19， 035603
[8] Debabrata Pradhan, Susanta K. Mohapatra, Morphology-Controlled ZnO Nanomaterials for Enhanced Photoelectrochemical Performance，
Mater. Express , 2011，1， 59-67。
[9] Sang Hyun Lee, Tsutomu Minegishi, Jun-Seok Ha, Lateral arrays of vertical ZnO nanowalls on a periodically polarity-inverted ZnO template，Nanotechnology，2009 20 235304-235308
[10] Zhigang Yin, Nuofu Chen，On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method，Journal of Crystal Growth 305 (2007) 296–301
[11] Tse-Pu Chen , Sheng-Po Chang , Fei-Yi Hung , Shoou-Jinn Chang, Simple Fabrication Process for 2D ZnO Nanowalls and Their Potential Application as a Methane Sensor ,
Sensors 2013,
13, 3941-3950 。
[12] Zhang Wen, He Yongning, Cui Wanzhao, low-temperature hydrothermal preparation and the performance study thereof of ZnO nm wall film, chemical industry and engineering, 2010,27, (4) 283-287.
[13] Dae-Hee Kim, Sam-Dong Lee, Kyoung-Kook Kim, Gyeong-Su Park, Ji-Myon Lee, and Sang-Woo Kim，Free-Standing ZnO Nanorods and Nanowalls by Aqueous Solution Method。Journal of Nanoscience and Nanotechnology 2008,8, 4688–4691.
[14] N.H. Alvi, S.M. Usman Ali, S. Hussain, O. Nur and M. Willander，Fabrication and comparative optical characterization of n-ZnO nanostructures (nanowalls, nanorods, nanoflowers and nanotubes)/ p-GaN white-light-emitting diodes，Scripta Materialia 64 (2011) 697–700。
[15] Huihui Huang, HaoningWang, and Guojia Fang, Seedless synthesis of layered ZnO nanowall networks on Al substrate for white light electroluminescence,Nanotechnology, 2013, 24, 315203-315209.
[16]Dae-Hee Kim, Sam-Dong Lee, Sang-Woo Kim,Free-Standing ZnO Nanorods and Nanowalls by Aqueous Solution Method, Journal of Nanoscience and Nanotechnology 2008,8, 4688–4691.
[17] M.Kashif, Syed M. Usman Ali,K. L. Foo ,U. Hashim ,Magnus Willander, ZnO Nanoporous Structure Growth, Optical and Structural Characterization by Aqueous Solution Route, Enabling Science and Technology, 2011,1341,92-95。
[18] Zhiqiang Liang , RuiGao, Jo-LinLan, Orawan Wiranwetchayan , Growth of vertically aligned ZnO nanowalls for inverted polymer solar cells, Solar Energy Materials& Solar Cells117(2013)34–40。
Summary of the invention
The water solution preparation method that the object of this invention is to provide a kind of oriented growth single crystal ZnO nm wall, the polycrystalline non-directional problem existing to overcome prior art.
The technical solution adopted in the present invention is:
A water solution preparation method for oriented growth single crystal ZnO nm wall, is characterized in that:
Comprise the steps:
A. ZnO Seed Layer preparation:
Zn (the CH that is 1:1 by mol ratio
3cOO)
22H
2o and Al (NO
3)
3.9H
2the mixed solvent that the ethylene glycol monomethyl ether that O is 1:1 with volume ratio and ethanol form mixes at ambient temperature, makes Zn
2+concentration is 0.05-0.5mol/L, is placed in water-bath, by magnetic stirring apparatus heated and stirred at 60-80 ℃, then, stabilizer alcohol amine is dropwise joined in above-mentioned solution, until solution is clarified completely, continues to stir 1-2h, obtains uniform and stable colloid; To pass through successively acetone, ethanolic soln and deionized water ultrasonic cleaning, the ITO conducting glass substrate after oven dry vertically immerses in colloidal sol, static 15-30s; After vertical taking-up, at 100 ℃, be dried 5-10min; Repeatedly lift dry 4-6 time so that film is even and reach ideal thickness; By film thermal treatment 30-90min at 400-500 ℃, prepare the substrate of glass that contains Seed Layer standby;
B. ZnO nano wall growth
By Zn (NO
3)
26H
2o and (CH
3)
6n
4for 1:1, be mixed with in molar ratio the solution of 0.025-0.05mol/L, 60-90 ℃ of heated and stirred 0.5-1h, pours solution in the polytetrafluoroethylliner liner of hydrothermal reaction kettle, and the substrate of glass that contains Seed Layer is vertically inserted, 80-100 ℃ of constant temperature growth 1-6h; After taking-up, with deionized water rinsing dry, finally put into cabinet-type electric furnace thermal treatment 0.5-1.5 h at 500-550 ℃; After taking-up, use deionized water rinsing, drying, on ITO conductive glass, obtain one deck white film.
The present invention has the following advantages:
1, the ZnO nano wall of preparing with respect to the aqua-solution method of existing bibliographical information, present technique combines traditional aqua-solution method and hydrothermal method, ZnO Seed Layer is improved, with the Zn (CH of mol ratio 1:1
3cOO)
22H
2o and Al (NO
3)
3.9H
2o is dissolved in volume ratio is in the mixed solvent that is comprised of ethylene glycol monomethyl ether, ethanol of 1:1, can realize ZnO nano wall
directedgrowth.The method neither needs to use Al paper tinsel for substrate, does not also need evaporating Al film, and preparation method is safe and reliable, convenient and easy, pollution-free.Easy and simple to handle, use conventional container and equipment.
2, the ZnO nano wall of preparing with respect to the aqua-solution method of existing bibliographical information, by to the thermal treatment of ZnO nano wall (500-550 ℃), can realize the monocrystalline of ZnO nano wall, this can provide more effective conductive channel to improve specific conductivity to gas sensor.
Accompanying drawing explanation
Fig. 1 is the ZnO nano wall microscopic appearance figure of embodiment 1 preparation.
Fig. 2 is the ZnO nano wall microscopic appearance figure of embodiment 2 preparations.
Fig. 3 is the ZnO nano wall microscopic appearance figure of embodiment 3 preparations.
Fig. 4 is the ZnO nano wall microscopic appearance figure of embodiment 4 preparations.
Fig. 5 is the ZnO nano wall transmission electron microscope picture of embodiment 1 preparation.
Fig. 6 is the ZnO nano wall XRD spectrum of embodiment 1 preparation.
Fig. 7 is the ZnO nano wall selected area electron diffraction photo of embodiment 1 preparation.
Embodiment
Below in conjunction with embodiment, the present invention will be described in detail.
embodiment 1:
a. ZnO Seed Layer preparation:
By Zn (CH
3cOO)
22H
2o and Al (NO
3)
3.9H
2o (1:1) (Zinc diacetate dihydrate, analytical pure) mixes (Zn at ambient temperature with the mixed solvent that ethylene glycol monomethyl ether, ethanol (1:1 ratio) form
2+concentration is 0.2mol/L), be placed on heated and stirred on magnetic stirring apparatus (temperature is 60 ℃), then, stabilizer alcohol amine (MEA) is dropwise joined in above-mentioned solution, until solution is clarified completely, continue to stir (1h), obtain uniform and stable colloid.To pass through successively acetone, ethanolic soln and deionized water ultrasonic cleaning (scavenging period is 30min), the ITO conducting glass substrate after oven dry vertically immerses in colloidal sol, static 30s; After vertical taking-up, at 100 ℃, be dried 5min; Repeatedly lift dry 4 times so that film evenly and reach ideal thickness; By film thermal treatment 30min at 500 ℃.
b. ZnO nano wall growth:
By Zn (NO
3)
26H
2o(zinc nitrate hexahydrate, analytical pure) and (CH
3)
6n
4(hexamethylenetetramine, HMT; Analytical pure) 1:1 is mixed with the solution of 0.05mol/L, 80 ℃ of heated and stirred 0.5h in molar ratio.Solution is poured in the polytetrafluoroethylliner liner of hydrothermal reaction kettle, and the substrate of glass that contains Seed Layer is vertically inserted, 80 ℃ of constant temperature growth 4h; After taking-up, with deionized water rinsing dry, finally put into cabinet-type electric furnace thermal treatment 1 h at 500 ℃.After taking-up, use deionized water rinsing, drying, on ITO conductive glass, obtain the transparent film of one deck white.As shown in Figure 1, as can be seen from the figure nm wall Thickness Ratio is more even for gained ZnO nano wall microscopic appearance, perpendicular with substrate, and thickness of wall body is probably in 30nm left and right.Fig. 5 is the transmission electron microscope photo of nm wall part, can see that thickness of wall body is more even from figure.Fig. 6 is the XRD spectrum of ZnO nano wall, at 34.450 °, has located to occur a sharp-pointed peak, be ZnO(002 by analysis) diffraction peak of crystal face, and the diffraction peak of other crystal face of ZnO does not all occur, illustrates that the ZnO nano wall of generation has good preferred orientation.The selected area electron diffraction photo (Fig. 7) of monolithic ZnO nano wall has confirmed that it is for single crystal structure.
embodiment 2:
a. ZnO Seed Layer preparation:
By Zn (CH3COO)
22H
2o and Al (NO
3)
3.9H
2o (mol ratio 1:1) (Zinc diacetate dihydrate, analytical pure) mixes (Zn at ambient temperature with the mixed solvent that ethylene glycol monomethyl ether, ethanol (volume ratio 1:1) form
2+concentration is 0.05mol/L), be placed on heated and stirred on magnetic stirring apparatus (temperature is 65 ℃), then, stabilizer alcohol amine (MEA) is dropwise joined in above-mentioned solution, until solution is clarified completely, continue to stir (1h), obtain uniform and stable colloid.To pass through successively acetone, ethanolic soln and deionized water ultrasonic cleaning (scavenging period is 30min), the ITO conducting glass substrate after oven dry vertically immerses in colloidal sol, static 20s; After vertical taking-up, at 100 ℃, be dried 5min; Repeatedly lift dry 5 times so that film evenly and reach ideal thickness; By film thermal treatment 30min at 500 ℃.
b. ZnO nano wall growth:
By Zn (NO
3)
26H
2o(zinc nitrate hexahydrate, analytical pure) and (CH
3)
6n
4(hexamethylenetetramine, HMT; Analytical pure) 1:1 is mixed with the solution of 0.05mol/L, 85 ℃ of heated and stirred 0.5h in molar ratio.Solution is poured in the polytetrafluoroethylliner liner of hydrothermal reaction kettle, and the substrate of glass that contains Seed Layer is vertically inserted, 80 ℃ of constant temperature growth 3h; After taking-up, with deionized water rinsing dry, finally put into cabinet-type electric furnace thermal treatment 1 h at 550 ℃.After taking-up, use deionized water rinsing, drying, on ITO conductive glass, obtain the transparent film of one deck white.Gained ZnO nano wall microscopic appearance as shown in Figure 2.
embodiment 3:
a. ZnO Seed Layer preparation:
By Zn (CH3COO)
22H
2o and Al (NO
3)
3.9H
2o (mol ratio 1:1) (Zinc diacetate dihydrate, analytical pure) mixes (Zn at ambient temperature with the mixed solvent that ethylene glycol monomethyl ether, ethanol (volume ratio 1:1 ratio) form
2+concentration is 0.3mol/L), be placed on heated and stirred on magnetic stirring apparatus (temperature is 70 ℃), then, stabilizer alcohol amine (MEA) is dropwise joined in above-mentioned solution, until solution is clarified completely, continue to stir (2h), obtain uniform and stable colloid.To pass through successively acetone, ethanolic soln and deionized water ultrasonic cleaning (scavenging period is 30min), the ITO conducting glass substrate after oven dry vertically immerses in colloidal sol, static 30s; After vertical taking-up, at 100 ℃, be dried 5min; Repeatedly lift dry 5 times so that film evenly and reach ideal thickness; By film thermal treatment 30min at 500 ℃.
b. ZnO nano wall growth:
By Zn (NO
3)
26H
2o(zinc nitrate hexahydrate, analytical pure) and (CH
3)
6n
4(hexamethylenetetramine, HMT; Analytical pure) 1:1 is mixed with the solution of 0.025mol/L, 85 ℃ of heated and stirred 0.5h in molar ratio.Solution is poured in the polytetrafluoroethylliner liner of hydrothermal reaction kettle, and the substrate of glass that contains Seed Layer is vertically inserted, 60 ℃ of constant temperature growth 6h; After taking-up, with deionized water rinsing dry, finally put into cabinet-type electric furnace thermal treatment 0.5 h at 550 ℃.After taking-up, use deionized water rinsing, drying, on ITO conductive glass, obtain the transparent film of one deck white.Gained ZnO nano wall microscopic appearance as shown in Figure 3.
embodiment 4:
a. ZnO Seed Layer preparation:
By Zn (CH3COO)
22H
2o and Al (NO
3)
3.9H
2o (1:1) (Zinc diacetate dihydrate, analytical pure) mixes (Zn at ambient temperature with the mixed solvent that ethylene glycol monomethyl ether, ethanol (1:1 ratio) form
2+concentration is 0.5mol/L), be placed on heated and stirred on magnetic stirring apparatus (temperature is 80 ℃), then, stabilizer alcohol amine (MEA) is dropwise joined in above-mentioned solution, until solution is clarified completely, continue to stir (2h), obtain uniform and stable colloid.To pass through successively acetone, ethanolic soln and deionized water ultrasonic cleaning (scavenging period is 30min), the ITO conducting glass substrate after oven dry vertically immerses in colloidal sol, static 15s; After vertical taking-up, at 100 ℃, be dried 10min; Repeatedly lift dry 6 times so that film evenly and reach ideal thickness; By film thermal treatment 90min at 400 ℃.
b. ZnO nano wall growth
By Zn (NO
3)
26H
2o(zinc nitrate hexahydrate, analytical pure) and (CH
3)
6n
4(hexamethylenetetramine, HMT; Analytical pure) 1:1 is mixed with the solution of 0.05mol/L, 90 ℃ of heated and stirred 1h in molar ratio.Solution is poured in the polytetrafluoroethylliner liner of hydrothermal reaction kettle, and the substrate of glass that contains Seed Layer is vertically inserted, 100 ℃ of constant temperature growth 1h; After taking-up, with deionized water rinsing dry, finally put into cabinet-type electric furnace thermal treatment 1.5h at 550 ℃.After taking-up, use deionized water rinsing, drying, on ITO conductive glass, obtain the transparent film of one deck white.Gained ZnO nano wall microscopic appearance as shown in Figure 4.
It is cited that content of the present invention is not limited to embodiment, and the conversion of any equivalence that those of ordinary skills take technical solution of the present invention by reading specification sheets of the present invention, is claim of the present invention and contains.
Claims (1)
1. a water solution preparation method for oriented growth single crystal ZnO nm wall, is characterized in that:
Comprise the steps:
A. ZnO Seed Layer preparation:
Zn (the CH that is 1:1 by mol ratio
3cOO)
22H
2o and Al (NO
3)
3.9H
2the mixed solvent that the ethylene glycol monomethyl ether that O is 1:1 with volume ratio and ethanol form mixes at ambient temperature, makes Zn
2+concentration is 0.05-0.5mol/L, is placed in water-bath, by magnetic stirring apparatus heated and stirred at 60-80 ℃, then, stabilizer alcohol amine is dropwise joined in above-mentioned solution, until solution is clarified completely, continues to stir 1-2h, obtains uniform and stable colloid; To pass through successively acetone, ethanolic soln and deionized water ultrasonic cleaning, the ITO conducting glass substrate after oven dry vertically immerses in colloidal sol, static 15-30s; After vertical taking-up, at 100 ℃, be dried 5-10min; Repeatedly lift dry 4-6 time so that film is even and reach ideal thickness; By film thermal treatment 30-90min at 400-500 ℃, prepare the substrate of glass that contains Seed Layer standby;
B. ZnO nano wall growth
By Zn (NO
3)
26H
2o and (CH
3)
6n
4for 1:1, be mixed with in molar ratio the solution of 0.025-0.05mol/L, 60-90 ℃ of heated and stirred 0.5-1h, pours solution in the polytetrafluoroethylliner liner of hydrothermal reaction kettle, and the substrate of glass that contains Seed Layer is vertically inserted, 80-100 ℃ of constant temperature growth 1-6h; After taking-up, with deionized water rinsing dry, finally put into cabinet-type electric furnace thermal treatment 0.5-1.5 h at 500-550 ℃; After taking-up, use deionized water rinsing, drying, on ITO conductive glass, obtain one deck white film.
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| CN103880064A (en) * | 2014-03-24 | 2014-06-25 | 济南大学 | Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube |
| CN104483226A (en) * | 2014-12-08 | 2015-04-01 | 天津大学 | Preparation method of gas-sensitive thin film for gas-sensitive micro balance of quartz crystal |
| CN105021655B (en) * | 2015-07-03 | 2017-08-22 | 西安工业大学 | ZnO nano wall/RGO hetero-junctions gas sensors and preparation method thereof |
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