CN103628036A - Preparation method of cubic boron nitride-coated cutting tool - Google Patents
Preparation method of cubic boron nitride-coated cutting tool Download PDFInfo
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Abstract
The invention discloses a preparation method of a cubic boron nitride-coated cutting tool. The preparation method comprises the following steps: preprocessing a Si3N4 ceramic substrate; putting the substrate into hot filament chemical vapor deposition equipment for depositing boron-doped diamond; putting a deposited thin film sample into direct-current plasma jet chemical vapor deposition equipment, etching and cleaning the surface under the positive bias voltage of 30-40 V for 30-45 seconds, and depositing a cubic boron nitride coating, wherein the specific parameters are as follows: the flow quantities of BF3, N2, Ar and H2 are 20 sccm, 2 slm, 3 slm and 4 sccm respectively, the total reaction gas pressure is 4 kPa, the negative bias voltage of the substrate is 65 V, the substrate temperature is 860 DEG C, and the depositing time is 50 minutes. The preparation method is simple in process and easier to operate; the bonding performance of the coating and the substrate is remarkably improved.
Description
Technical field
The present invention relates to a kind of superhard film technology of preparing, especially a kind of preparation method of cubic boron nitride coated cutting tool, specifically a kind of use DC plasma jet chemical Vapor deposition process is at Si
3n
4on substrate, take the preparation method of boron-doped diamond as transition layer deposition cubic boron nitride cutting tool coating.
Background technology
As everyone knows, cubic boron nitride (cBN) is being only second to diamond aspect hardness and thermal conductivity, and thermostability is fabulous, in atmosphere, below 1300 C, there is not oxidizing reaction, 1550 C just start to change to hexagonal boron nitride (hBN) in a vacuum, and the Ferrious material of getting along well below 1150 C reaction, adds that cBN has good wear resistance, minimum frictional coefficient, make cBN become the desirable cutter of machined steel iron material, be specially adapted to process the difficult-to-machine materials such as various quenched steels, chill steel.More tempting, the energy gap of cBN is about 6.4eV, and can carry out simple p-type and N-shaped doping, makes it become the preferred material of high power high-temperature electron device.In addition, the light of cBN in wide range of wavelengths interval has good perviousness, makes it in optical window plated film field, also have potential application prospect.At present cBN cutter be take polycrystalline cubic boron nitride (PcBN) prepared by high-temperature high-pressure craft as main, be used for making the simple blade of shape matching, current sintering process also cannot economic and reliable the preparation of carrying out complicated shape PcBN cutter, and the high rigidity of PcBN causes its sharpening very difficult.With respect to PcBN, cBN coating goes for the Si of any complicated shape
3n
4sintex matrix, realizes expected cost after suitability for industrialized production than low many of PcBN, has significant economy, can become the high-performance cutter having compared with high performance-price ratio.Therefore, cBN has broad application prospects as cutter coat, is especially applicable to the processing of the inefficient ferrous metal of diamond-coated tools.
Research is found, Si
3n
4pottery is the Novel substrate material of preparing diamond transition layer, and its reason is except Si
3n
4pottery is outside one of stupalith that intensity is the highest, toughness is best, and the gap that is more its thermal expansivity and adamantine thermal expansivity is less comparing than the gap of the thermal expansivity of Wimet and adamantine thermal expansivity; Si
3n
4pottery has stronger chemical compatibility, is conducive to diamond forming core on substrate; Si
3n
4pottery has low-heat mismatch ratio can obtain the coating of low internal stress with diamond, thereby obtains the diamond coatings of better quality.In addition, research also finds that diamond is the substrate material of optimum cBN growth, and its reason is that diamond and cBN have close lattice parameter, more approaching surface free energy; The a large amount of surface microscopic defect of diamond provides suitable nucleation district for cBN; It is obviously the good substrate of cBN film growth that the compatibility of cBN and diamond the best makes diamond.But Si
3n
4pottery is a kind of electrically nonconducting material, does not have the diamond of doping also non-conductive, and we can apply certain bias voltage to substrate in deposition process and induce ion bombardment substrate conventionally, to deposit higher-quality diamond.Yet, because above-mentioned bi-material is all non-conductive, so cannot be at Si
3n
4the diamond of take on substrate effectively applies direct current (DC) bias to substrate when transition layer deposits cubic boron nitride, so just can not deposit cBN coating.Therefore, the present invention proposes at Si
3n
4in ceramic substrate, deposit boron-doped diamond as transition layer to realize the preparation of cBN coated cutting tool, at Si
3n
4sintex surface deposits boron-doped diamond transition layer and cBN coating successively, and wherein, cBN provides good unreactiveness for cutter, and boron-doped diamond transition layer provides and Si
3n
4the binding ability that ceramic bases is stronger, also provides the best substrate material of cBN growth, and its good electroconductibility can be so that depositing system can effectively apply direct current (DC) bias to substrate, and meanwhile, its excellent mechanical property provides solid support for cBN coating.The bonding strength that these have improved cBN coating and substrate greatly, has improved the range of application of cBN coating.
Summary of the invention
It is poor to the object of the invention is for cement carbide substrate and diamond transition layer bonding force, and cannot to non-conductive substrate and diamond transition layer, execute biased problem by general direct current (DC) bias system, invents a kind of use Si
3n
4pottery is as substrate, and boron-doped diamond is as the preparation method of the cubic boron nitride coated cutting tool of transition layer.
Technical scheme of the present invention is:
A preparation method for cubic boron nitride coated cutting tool, is characterized in that it comprises:
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish, and polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 30～45min from coarse to fine; Afterwards by the Si after polishing
3n
4ceramic tip is put into acetone soln ultrasonic cleaning 10～15min, then by the Si after described ultrasonic cleaning
3n
4ultrasonic 15～the 20min of acetone suspension liquid that the diamond crystallites powder configuration that it is 0.5～1 μ m that ceramic tip is placed in by granularity forms, after taking-up, with deionized water, filter surface immediately, put into spirituous solution ultrasonic cleaning 5～10min again, hair dryer dries up stand-by, obtains substrate;
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, C/H is 2%～4%(volume percent) carbon source concentration under carbonization 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 4～8mm;
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, and should be first to carrying out metal spraying processing through the pretreated ceramic tip back side as substrate; Re-use hot filament CVD and deposit boron-doped diamond on the substrate of processing through metal spraying, obtain the substrate that there is boron-doped diamond transition layer on surface;
(4) last, deposition cubic boron nitride coating: the substrate that has deposited boron-doped diamond transition layer is put into DC plasma jet chemical vapor depsotition equipment, first pass into BF
3, N
2, these three kinds of gases of Ar, etching 30～45s under positive bias 30～40V condition, carries out clean to substrate; After etching is complete, pass into H
2, then on the substrate that has boron-doped diamond transition layer through the surface deposition of clean, deposit again cubic boron nitride coating, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.
In described acetone suspension liquid, the weight percent of diamond crystallites powder is 0.1～1%.
The processing parameter of described hot-filament cvd reactor boron-doped diamond is: substrate is placed in approximately 4～8mm of tantalum wire below, hot-wire temperature 2400～2700 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 2000～4000ppm, total flux 400sccm, depositing time 5h.
Described cubic boron nitride coating deposition process parameters is: BF
3, N
2, Ar and H
2flow be respectively 20sccm, 2slm, 3slm, 4sccm, total reaction pressure is 4kPa, substrate DC bias is 65V, underlayer temperature is 860 C, depositing time is 50min.
Beneficial effect of the present invention:
Experimental results show that (Fig. 1) used Si
3n
4pottery deposits the transition layer that boron-doped diamond transition layer can obtain comparison high-quality for substrate; Experimental results show that (Fig. 2) used Si
3n
4pottery is the cBN coating that substrate boron-doped diamond transition layer can be prepared better quality; Technique of the present invention is simple, and condition ratio is easier to control, and operation is easier to, and the bonding properties of coating and substrate significantly improves.
Accompanying drawing explanation
Fig. 1 is that the present invention is at Si
3n
4the Raman spectrum experimental result picture that deposits b-doped diamond film in ceramic bases, substrate surface has deposited boron-doped diamond really.
Fig. 2 is that the present invention is at Si
3n
4in ceramic bases, deposit the FTIR reflection spectrogram that deposits again cBN coating after boron-doped diamond transition layer, in visible coating, really contain cBN, and cBN coating quality is better.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Figure 1-2.
A preparation method for cubic boron nitride coated cutting tool, it comprises the following steps:
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish, and polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 30～45min from coarse to fine; Afterwards by the Si after polishing
3n
4ceramic tip is put into acetone soln ultrasonic cleaning 10～15min, then by the Si after described ultrasonic cleaning
3n
4ultrasonic 15～the 20min of acetone suspension liquid that the diamond crystallites powder configuration that it is 0.5～1 μ m that ceramic tip is placed in by granularity forms, in described acetone suspension liquid, the weight percent of diamond crystallites powder is 0.1～1%, after taking-up, with deionized water, filter surface immediately, put into spirituous solution ultrasonic cleaning 5～10min again, hair dryer dries up stand-by, obtains substrate;
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, C/H is 2%～4%(volume percent) carbon source concentration under carbonization 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 4～8mm;
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, and should be first to carrying out metal spraying processing through the pretreated ceramic tip back side as substrate; Re-use hot filament CVD and deposit boron-doped diamond on the substrate of processing through metal spraying, obtain the substrate that there is boron-doped diamond transition layer on surface; At Si
3n
4in ceramic substrate, deposit the Raman spectrum experimental result picture of b-doped diamond film as shown in Figure 1, the processing parameter of described hot-filament cvd reactor boron-doped diamond is: substrate is placed in approximately 4～8mm of tantalum wire below, hot-wire temperature 2400～2700 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 2000～4000ppm, total flux 400sccm, depositing time 5h.
(4) last, deposition cubic boron nitride coating: the substrate that has deposited boron-doped diamond transition layer is put into DC plasma jet chemical vapor depsotition equipment, first pass into BF
3, N
2, these three kinds of gases of Ar, etching 30～45s under positive bias 30～40V condition, carries out clean to substrate; After etching is complete, pass into H
2, then on the substrate that has boron-doped diamond transition layer through the surface deposition of clean, deposit again cubic boron nitride coating, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.Described cubic boron nitride coating deposition process parameters is: BF
3, N
2, Ar or H
2flow be respectively 20sccm, 2slm, 3slm, 4sccm, total reaction pressure is 4kPa, substrate DC bias is 65V, underlayer temperature is 860 C, depositing time is 50min.The FTIR reflection spectrogram of cBN coating as shown in Figure 2.
Example 1.
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish
, polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 40min from coarse to fine.Afterwards blade is put into acetone soln ultrasonic cleaning 12min, again substrate is placed in to the ultrasonic 15min of acetone suspension liquid being formed by the configuration of diamond crystallites powder, after taking-up, with deionized water, filters surface immediately, put into spirituous solution ultrasonic cleaning 8min, hair dryer dries up stand-by, obtains substrate.
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, under the carbon source concentration that C/H is 4%, carbonization is 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 8mm.
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, metal spraying processing is carried out in the ceramic tip back side.Re-use hot filament CVD and deposit boron-doped diamond on the pretreated substrate of above-mentioned process, obtain the substrate that there is boron-doped diamond transition layer on surface; The processing parameter of described hot-filament cvd reactor boron-doped diamond is: substrate is placed in the about 8mm in tantalum wire below, hot-wire temperature 2400～2700 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 4000ppm, total flux 400sccm, depositing time 5h.
(4) deposition cubic boron nitride coating: the sample that has deposited boron-doped diamond transition layer is put into DC plasma jet chemical vapor depsotition equipment, first pass into BF
3, N
2, these three kinds of gases of Ar, etching 40s under positive bias 40V condition, carries out clean to substrate; After etching is complete, pass into H
2, then on the substrate that has boron-doped diamond transition layer through the surface deposition of clean, deposit cubic boron nitride coating, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.Concrete processing parameter is: BF
3, N
2, Ar and H
2flow be respectively 20sccm, 2slm, 3slm, 4sccm, total reaction pressure is 4kPa, substrate DC bias is 65V, underlayer temperature is 860 C, depositing time is 50min.
Example 2.
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish
, polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 45min from coarse to fine.Afterwards blade is put into acetone soln ultrasonic cleaning 15min, substrate being placed in by granularity is the ultrasonic 19min of acetone suspension liquid that the configuration of 0.5～1um diamond crystallites powder forms again, after taking-up, with deionized water, filter surface immediately, put into spirituous solution ultrasonic cleaning 10min, hair dryer dries up stand-by, obtains substrate.
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, under the carbon source concentration that C/H is 3%, carbonization is 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 7mm.
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, metal spraying processing is carried out in the ceramic tip back side.Re-use hot filament CVD and deposit boron-doped diamond on the pretreated substrate of above-mentioned process, obtain the substrate that there is boron-doped diamond transition layer on surface; The processing parameter of described hot-filament cvd reactor boron-doped diamond is: substrate is placed in the about 7mm in tantalum wire below, hot-wire temperature 2400～2700 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 4000ppm, total flux 400sccm, depositing time 5h.
(4) surface deposition has the substrate surface pre-treatment of boron-doped diamond transition layer: deposition cubic boron nitride before in r. f. magnetron sputtering equipment, first pass into pure argon, then apply substrate DC bias 200V, sputtering power is 50W, to there being the Si of boron-doped diamond transition layer
3n
4ceramic substrate is carried out pre-sputtering, and sputtering time is 30min.
(5) deposition cubic boron nitride coating: use r. f. magnetron sputtering equipment to deposit cubic boron nitride coating on the substrate that has boron-doped diamond transition layer through pretreated surface deposition, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.Concrete deposition process parameters is: working gas Ar and N
2volume ratio be 9, sputtering power is 250W, substrate DC bias is 150V, deposition pressure is 0.6～0.7Pa, depositing temperature is 450 C, depositing time is 150min.
Example 3
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish, and polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 30min from coarse to fine.Afterwards blade is put into acetone soln ultrasonic cleaning 10min, again substrate is placed in to the ultrasonic 18min of acetone suspension liquid being formed by the configuration of diamond crystallites powder, after taking-up, with deionized water, filters surface immediately, put into spirituous solution ultrasonic cleaning 5min, hair dryer dries up stand-by, obtains substrate.
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, under the carbon source concentration that C/H is 3%, carbonization is 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 6m.
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, metal spraying processing is carried out in the ceramic tip back side.Re-use hot filament CVD and deposit boron-doped diamond on the pretreated substrate of above-mentioned process, obtain the substrate that there is boron-doped diamond transition layer on surface; The processing parameter of described hot-filament cvd reactor boron-doped diamond is: substrate is placed in the about 6mm in tantalum wire below, hot-wire temperature 2400 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 3000ppm, total flux 400sccm, depositing time 5h.
(4) deposition cubic boron nitride coating: the sample that has deposited boron-doped diamond transition layer is put into DC plasma jet chemical vapor depsotition equipment, first pass into BF
3, N
2, these three kinds of gases of Ar, etching 30s under positive bias 35V condition, carries out clean to substrate; After etching is complete, pass into H
2, then on the substrate that has boron-doped diamond transition layer through the surface deposition of clean, deposit cubic boron nitride coating, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.Concrete processing parameter is: BF
3, N
2, Ar and H
2flow be respectively 20sccm, 2slm, 3slm, 4sccm, total reaction pressure is 4kPa, substrate DC bias is 65V, underlayer temperature is 860 C, depositing time is 50min.
Example 4.
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish
, polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 45min from coarse to fine.Afterwards blade is put into acetone soln ultrasonic cleaning 15min, substrate being placed in by granularity is the ultrasonic 20min of acetone suspension liquid that 0.5～1 μ m diamond crystallites powder configuration forms again, after taking-up, with deionized water, filter surface immediately, put into spirituous solution ultrasonic cleaning 10min, hair dryer dries up stand-by, obtains substrate.
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, under the carbon source concentration that C/H is 2%, carbonization is 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 5mm.
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, metal spraying processing is carried out in the ceramic tip back side.Re-use hot filament CVD and deposit boron-doped diamond on the pretreated substrate of above-mentioned process, obtain the substrate that there is boron-doped diamond transition layer on surface; The processing parameter of described hot-filament cvd reactor boron-doped diamond is: substrate is placed in the about 4mm in tantalum wire below, hot-wire temperature 2700 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 2000ppm, total flux 400sccm, depositing time 5h.
(4) surface deposition has the substrate surface pre-treatment of boron-doped diamond transition layer: deposition cubic boron nitride before in r. f. magnetron sputtering equipment, first pass into pure argon, then apply substrate bias 200V, sputtering power is 50W, to there being the Si of boron-doped diamond transition layer
3n
4ceramic substrate is carried out pre-sputtering, and sputtering time is 30min.
(5) deposition cubic boron nitride coating: use r. f. magnetron sputtering equipment to deposit cubic boron nitride coating on the substrate that has boron-doped diamond transition layer through pretreated surface deposition, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.Concrete deposition process parameters is: working gas Ar and N
2volume ratio be 9, sputtering power is 250W, substrate DC bias is 150V, deposition pressure is 0.6～0.7Pa, depositing temperature is 450 C, depositing time is 150min.
The part that the present invention does not relate to all prior art that maybe can adopt same as the prior art is realized.
Claims (4)
1. a preparation method for cubic boron nitride coated cutting tool, is characterized in that it comprises:
(1) pre-treatment of substrate: use Si
3n
4ceramic tip is as substrate material, first by Si
3n
4ceramic tip carries out surface finish, and polishing is used W20, W14, W7 model diamond sand paper to polish successively and amount to 30～45min from coarse to fine; Afterwards by the Si after polishing
3n
4ceramic tip is put into acetone soln ultrasonic cleaning 10～15min, then by the Si after described ultrasonic cleaning
3n
4ultrasonic 15～the 20min of acetone suspension liquid that the diamond crystallites powder configuration that it is 0.5～1 μ m that ceramic tip is placed in by granularity forms, after taking-up, with deionized water, filter surface immediately, put into spirituous solution ultrasonic cleaning 5～10min again, hair dryer dries up stand-by, obtains substrate;
(2) tantalum wire pre-treatment: the heated filament in hot-filament chemical vapor deposition equipment is tantalum wire, tantalum wire is stretching and be fixed on substrate top, and then at total gas couette 400sccm, under the carbon source concentration that C/H is 2%～4%, carbonization is 1 hour; After carbonization, rise deposition table, the distance of controlling substrate and tantalum wire is 4～8mm;
(3) substrate surface metal spraying is processed and deposition boron-doped diamond transition layer: for guaranteeing the smooth derivation of substrate bias electric current, and should be first to carrying out metal spraying processing through the pretreated ceramic tip back side as substrate; Re-use hot filament CVD and deposit boron-doped diamond on the substrate of processing through metal spraying, obtain the substrate that there is boron-doped diamond transition layer on surface;
(4) last, deposition cubic boron nitride coating: the substrate that has deposited boron-doped diamond transition layer is put into DC plasma jet chemical vapor depsotition equipment, first pass into BF
3, N
2, these three kinds of gases of Ar, etching 30～45s under positive bias 30～40V condition, carries out clean to substrate; After etching is complete, pass into H
2, then on the substrate that has boron-doped diamond transition layer through the surface deposition of clean, deposit again cubic boron nitride coating, obtain the cubic boron nitride coated cutting tool that bonding strength meets the demands.
2. method according to claim 1, is characterized in that the weight percent of diamond crystallites powder in described acetone suspension liquid is 0.1～1%.
3. method according to claim 1, the processing parameter that it is characterized in that described hot-filament cvd reactor boron-doped diamond is: substrate is placed in approximately 4～8mm of tantalum wire below, hot-wire temperature 2400～2700 C, 800 ℃ of underlayer temperatures, reaction pressure 2.5kPa, carbon source concentration 1%, boron-doping concentration 2000～4000ppm, total flux 400sccm, depositing time 5h.
4. method according to claim 1, is characterized in that described cubic boron nitride coating deposition process parameters is: BF
3, N
2, Ar and H
2flow be respectively 20sccm, 2slm, 3slm, 4sccm, total reaction pressure is 4kPa, substrate DC bias is 65V, underlayer temperature is 860 C, depositing time is 50min.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105603387A (en) * | 2016-02-11 | 2016-05-25 | 广东工业大学 | Boron nitride composite coating, graded superfine hard alloy cutter provided with same and preparation method thereof |
| CN108220916A (en) * | 2018-01-15 | 2018-06-29 | 南京航空航天大学 | A kind of preparation method of the GNCD-cBN nanocomposite laminated coating cutters with toughening mechanisms |
| CN108396309A (en) * | 2017-02-06 | 2018-08-14 | 香港城市大学 | A kind of cubic boron nitride coated cutting tool and preparation method thereof |
| CN108624881A (en) * | 2018-05-10 | 2018-10-09 | 广州番禺职业技术学院 | A kind of dry cutting cutter and preparation method thereof |
| CN109811298A (en) * | 2019-03-19 | 2019-05-28 | 中南大学 | Hard alloy cutter preprocess method and device before a kind of deposition of diamond coatings |
| CN110230040A (en) * | 2019-07-04 | 2019-09-13 | 刘禹超 | A kind of production method of cubic boron nitride film |
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