CN103626121A - Anodic automatic bonding equipment - Google Patents
Anodic automatic bonding equipment Download PDFInfo
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- CN103626121A CN103626121A CN201310151109.0A CN201310151109A CN103626121A CN 103626121 A CN103626121 A CN 103626121A CN 201310151109 A CN201310151109 A CN 201310151109A CN 103626121 A CN103626121 A CN 103626121A
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Abstract
The invention discloses anodic automatic bonding equipment. The anodic automatic bonding equipment comprises a bonding processing heating furnace which is provided with a component sucking rod at the upper part; the component sucking rod is mounted onto a lifting and moving mechanism which can move vertically; a visual microscopic system and an intelligent temperature control meter are mounted at one side of the lifting and conveying mechanism; and a displacement and rotation platform is mounted at the bottom part of the bonding processing heating furnace. The anodic automatic bonding equipment can meet the bonding condition of a micro electro mechanical system, enables high quality of a product after bonding through intelligent control, is simple and convenient to operate, and also expands the scope of industrial application of anodic bonding.
Description
Technical field
The present invention relates to a kind of anode automation key and equipment, belong to bonding apparatus technical field in microelectric technique.
Background technology
MEMS also claims micro-system or micromachine (Micro electronic mechanical system, be called for short MEMS) be the research frontier of the multidisciplinary intersection that grows up on microelectric technique basis, be described as 21 century has revolutionary new and high technology very much, it relates to microelectronics, micromechanics, micro-optics, materialogy, information and control, and the multiple subject such as physics, chemistry, biology, and intensive many high-tech achievements of current science and technology.MEMS is multi-functional, the high accuracy microelectronic mechanical apparatus system that integrates micromachine, microsensor, microactrator, information processing, Based Intelligent Control.Its technical goal be realize information obtain, process, judge, carry out integrated, have that size is little, thermal capacity is low, easily obtain high sensitivity, the feature such as high response.The tipped of this systematization, multifunctional all and technology makes MEMS become an emerging field that has vitality that interdiscipline is cross-cutting, causes people's very big interest.
In recent years, China is also in the research of Efforts To Develop microelectromechanical systems.The making of this MEMS is also the combination that utilizes conventional integrated circuit technique and the exclusive special process of micromachined, because the latter is the key technology of manufacturing micro-mechanical inertia sensor, microactrator and MEMS.And as micro electro-mechanical system packaging key technology---the anode linkage technology of semiconductor silicon and glass is widely used.Anode linkage is the bonding technology of a kind of extensive use in MEMS field, is mainly the permanent bonding of realizing between metal and insulator.For example, aspect the making of sensor, in order to improve its performance, reduce volume, hope is integrated in all components and parts on a chip.The material of making sensor has multiple, as compound semiconductor, silicon, pottery, ferroelectric polymers etc.Aspect investigation of materials, to the research of MEMS, be mainly also based on silicon materials at present, people generally believe that the best chip material of making integrated sensor is semiconductor silicon.Integrated in order to reduce electric capacity, improve circuit speed and integrated level and to realize three-dimensional, on silicon chip, bonding insulating materials is used as isolated component conventionally.Wafer bonding mainly contains two kinds of electrostatic bonding and thermal bondings.Wherein, the electrostatic bonding of semiconductor silicon and glass is one of key technology of MEMS making.In electrostatic bonding, using glass as the substrate of silicon device, there is good insulating properties and heat-insulating property, the distribution capacity of device is little, and thermal noise is little.Using glass as the capping of device, not only there is transparent feature, and there is good air-tightness, in addition, the operating temperature of the electrostatic bonding that silicon and glass are linked together is securely far below the temperature of silicon one silicon thermal bonding, and therefore, its purposes in microelectromechanical systems is also increasingly extensive.
Yet existing anode linkage technology is slightly inadequate aspect functions of the equipments, under many actual conditions, need under certain environmental conditions, complete bonding, as vacuum environment, special atmosphere environment, and hyperbaric environment etc., and before bonding operation, need print to carry out specially treated and operation in some situation, these requirements all need para-linkage equipment to design targetedly, and will take into account the factors such as easy and simple to handle, reliability and efficiency.Therefore the anode linkage equipment that design is applicable to requiring can be widened the range of application of anode linkage technique effectively.
Summary of the invention
The invention provides a kind of anode automation bonding apparatus, can realize the requirement of the various environment and conditions of anode linkage, simple to operate, product quality is high.
The present invention realizes by following technical scheme:
A kind of anode automation bonding apparatus, comprise a bonding processing heating furnace, its top has a workpiece and draws bar, described workpiece draw bar be installed on can mobile in the vertical direction lifting moving mechanism on, a side of described lifting moving mechanism is installed vision microscopic system and intelligent temperature reconciliation statement; Described bonding is processed heating furnace bottom a displacement rotating platform is installed.
Described workpiece is drawn bar and is had copper suction nozzle, on described copper suction nozzle, has electrode.
Described displacement rotating platform is by intelligent displacement module controls, and its moving direction by described displacement rotating platform is defined as three-dimensional, is respectively horizontal X direction of principal axis, vertical Y direction and front and back Y direction.
The rotation slide unit that described displacement rotating platform is installed by its bottom moves, and the mounting groove of described rotation slide unit is opened on the shell of anode automation bonding apparatus; Between described displacement rotating platform and rotation slide unit, there is ceramic insulation sheet.
Described intelligent displacement module can control displacement rotation platform move to accurately described vision microscopic system under and workpiece draw bar under.
Described bonding is processed heating furnace and is had a circular workspace, and center is workpiece bonding region, and circumferential position is around workpiece rest area.
Described anode automation bonding apparatus also comprises that can be supplied with vavuum pump and the high voltage supply device that can supply with bonding processing heating furnace high pressure that workpiece is drawn bar negative pressure.
Beneficial effect of the present invention is:
1. the present invention can realize the working environment of various anode linkages, as vacuum environment, special atmosphere environment or hyperbaric environment etc.
2. easy and simple to handle, reliability is high, and efficiency is high, can effectively widen the range of application of anode linkage technique, controls accurately, accurately mobile.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention
Fig. 2 is the structural representation that bonding is processed heating furnace work district
The specific embodiment
Below in conjunction with accompanying drawing, the present invention will be further described.
As Fig. 1, it is structural representation of the present invention, it is a kind of anode automation bonding apparatus, comprise a bonding processing heating furnace 9, its top has a workpiece and draws bar 7, workpiece is drawn side installation vision microscopic system 4 and the intelligent temperature reconciliation statement 3 that bar 7 is installed on 6 Shang， lifting moving mechanisms 6 of lifting moving mechanism that can be mobile in the vertical direction; Bonding is processed heating furnace bottom a displacement rotating platform 10 is installed.The rotation slide unit 11 that displacement rotating platform 10 is installed by its bottom moves, and the mounting groove of rotation slide unit is opened on the shell 5 of anode automation bonding apparatus; Between displacement rotating platform and rotation slide unit, there is ceramic insulation sheet 12.As Fig. 2, be the structural representation that bonding is processed heating furnace work district, bonding is processed heating furnace and is had a circular workspace, and center is workpiece bonding region 902, and circumferential position is around workpiece rest area 901.Wherein, displacement rotating platform is by intelligent displacement module controls, and its moving direction by displacement rotating platform is defined as three-dimensional, is respectively horizontal X direction of principal axis, vertical Y direction and front and back Y direction.This equipment also has a switch 1, temperature indicator 2 and touch-screen 8.
Take square silicon wafer and glass ring bonding is example, describes.Wherein in Fig. 2, have glass ring a and silicon chip b, workpiece rest area 901 comprises glass ring rest area A and silicon chip rest area B.Before processing, can by intelligent displacement module, regulate the Y direction of rotation slide unit 11, fore-and-aft direction, is adjusted to suitable position, then regulates intelligent temperature reconciliation statement 3, sets theoretical bonding temperature.Like this, when temperature reaches rated value, equipment can be by rotating the movement of X-axis and the Y direction of slide unit 11 in displacement rotating platform 10, by bonding process heating furnace 9 be accurately transported to vision microscopic system 4 under, again by fine setting, each workpiece on alignment pieces rest area 901.After image is processed, displacement rotating platform 10 can pass through X-axis by rotation slide unit 11 again, the copper suction nozzle card that the movement of Y direction is accurately placed into workpiece absorption bar 7 by workpiece silicon chip is transferred, and on copper suction nozzle, has electrode, can guarantee that silicon chip has hyperbaric environment when bonding.
Then, lifting moving mechanism 6 declines and makes workpiece absorption bar 7 suction nozzles touch silicon chip, at this moment vavuum pump work, the suction nozzle that causes workpiece to draw bar 7 forms negative pressure and thereby silicon chip can be held, hold rear lifting moving mechanism 6 segment distances that rise, the X of displacement rotating platform 10, Y-axis motion, thereby silicon chip is moved to the top of the workpiece thermal treatment zone 902 from the workpiece rest area 901 of bonding processing heating furnace 9, the rotation slide unit rotation adjustment angle of simultaneous displacement rotation platform 10 makes four limits of square silicon chip can correspond to bonding and processes the position of silicon wafer in the thermal treatment zone of heating furnace 9, thereby the silicon chip that has guaranteed like this to have characteristic shape can be by the correct precalculated position that is placed into, Zai Jiang lifting moving mechanism 6 declines, vavuum pump quits work, equipment reaches precalculated position with regard to successful automatic transporting silicon chip like this.The same glass ring rest area of glass ring being put into the workpiece thermal treatment zone of bonding processing heating furnace 9 through above-mentioned move mode is the top of silicon chip again.Because of workpiece, draw the deadweight of the suction nozzle dependence lifting moving mechanism 6 of bar 7, suction nozzle can be pressed in the surface of workpiece glass ring gently, requiring position and having obtained the required basic external pressure of bonding in the time of so just making two kinds of processing works reach bonding again.
Like this, by bonding, process high temperature, the hyperbaric environment that the high voltage supply device of heating furnace 9 and device interior provides, after a period of time, bonding just completes.Again by workpiece, draw the work of bar, vavuum pump and moving displacement platform, the workpiece processing is taken out and is placed on the glass ring rest area that bonding is processed heating furnace 9, thereby whole process completes.
Claims (7)
1. an anode automation bonding apparatus, it is characterized in that comprising a bonding processing heating furnace, its top has a workpiece and draws bar, described workpiece draw bar be installed on can mobile in the vertical direction lifting moving mechanism on, a side of described lifting moving mechanism is installed vision microscopic system and intelligent temperature reconciliation statement; Described bonding is processed heating furnace bottom a displacement rotating platform is installed.
2. a kind of anode automation bonding apparatus as claimed in claim 1, is characterized in that described workpiece absorption bar has copper suction nozzle, has electrode on described copper suction nozzle.
3. a kind of anode automation bonding apparatus as claimed in claim 1, it is characterized in that described displacement rotating platform is by intelligent displacement module controls, its moving direction by described displacement rotating platform is defined as three-dimensional, is respectively horizontal X direction of principal axis, vertical Y direction and front and back Y direction.
4. a kind of anode automation bonding apparatus as claimed in claim 1, is characterized in that the rotation slide unit that described displacement rotating platform is installed by its bottom moves, and the mounting groove of described rotation slide unit is opened on the shell of anode automation bonding apparatus; Between described displacement rotating platform and rotation slide unit, there is ceramic insulation sheet.
5. a kind of anode automation bonding apparatus as claimed in claim 2, it is characterized in that described intelligent displacement module can control displacement rotation platform move to accurately described vision microscopic system under and workpiece draw bar under.
6. a kind of anode automation bonding apparatus as claimed in claim 1, is characterized in that described bonding processing heating furnace has a circular workspace, and center is workpiece bonding region, and circumferential position is around workpiece rest area.
7. a kind of anode automation bonding apparatus as claimed in claim 1, is characterized in that described anode automation bonding apparatus also comprises that can be supplied with vavuum pump and the high voltage supply device that can supply with bonding processing heating furnace high pressure that workpiece is drawn bar negative pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310151109.0A CN103626121A (en) | 2013-04-27 | 2013-04-27 | Anodic automatic bonding equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310151109.0A CN103626121A (en) | 2013-04-27 | 2013-04-27 | Anodic automatic bonding equipment |
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| CN103626121A true CN103626121A (en) | 2014-03-12 |
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| CN201310151109.0A Pending CN103626121A (en) | 2013-04-27 | 2013-04-27 | Anodic automatic bonding equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273950A (en) * | 2000-06-02 | 2000-11-22 | 中国科学院上海冶金研究所 | Glass/silicon binding device used for mking micro mechanical parts and its application |
| CN2446688Y (en) * | 2000-08-25 | 2001-09-05 | 深圳市众量激光器高技术有限公司 | Electrode bonding machine for semiconductor laser and array tube core of laser |
| CN1713346A (en) * | 2004-06-24 | 2005-12-28 | 夏普株式会社 | Bonding apparatus, bonding method, and method for manufacturing semiconductor device |
| CN1792938A (en) * | 2005-12-13 | 2006-06-28 | 武汉理工大学 | Process for super low temp, anode bonding of microcrystal glass and stainless steel and apparatus thereof |
| CN102659072A (en) * | 2012-05-18 | 2012-09-12 | 山东理工大学 | Bonding equipment for chips and wafers |
| CN203307043U (en) * | 2013-04-27 | 2013-11-27 | 苏州迪纳精密设备有限公司 | Anodic automatic bonding equipment |
-
2013
- 2013-04-27 CN CN201310151109.0A patent/CN103626121A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273950A (en) * | 2000-06-02 | 2000-11-22 | 中国科学院上海冶金研究所 | Glass/silicon binding device used for mking micro mechanical parts and its application |
| CN2446688Y (en) * | 2000-08-25 | 2001-09-05 | 深圳市众量激光器高技术有限公司 | Electrode bonding machine for semiconductor laser and array tube core of laser |
| CN1713346A (en) * | 2004-06-24 | 2005-12-28 | 夏普株式会社 | Bonding apparatus, bonding method, and method for manufacturing semiconductor device |
| CN1792938A (en) * | 2005-12-13 | 2006-06-28 | 武汉理工大学 | Process for super low temp, anode bonding of microcrystal glass and stainless steel and apparatus thereof |
| CN102659072A (en) * | 2012-05-18 | 2012-09-12 | 山东理工大学 | Bonding equipment for chips and wafers |
| CN203307043U (en) * | 2013-04-27 | 2013-11-27 | 苏州迪纳精密设备有限公司 | Anodic automatic bonding equipment |
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Application publication date: 20140312 |