CN103620761B - Use the electronic device of the gas-tight seal of solder bonds - Google Patents
Use the electronic device of the gas-tight seal of solder bonds Download PDFInfo
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- CN103620761B CN103620761B CN201180035804.XA CN201180035804A CN103620761B CN 103620761 B CN103620761 B CN 103620761B CN 201180035804 A CN201180035804 A CN 201180035804A CN 103620761 B CN103620761 B CN 103620761B
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 239000011521 glass Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- 210000003298 dental enamel Anatomy 0.000 claims description 21
- 239000008393 encapsulating agent Substances 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 230000004807 localization Effects 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 2
- 229910017932 Cu—Sb Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 2
- 229910009071 Sn—Zn—Bi Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000002159 nanocrystal Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000002772 conduction electron Substances 0.000 claims 1
- 150000007529 inorganic bases Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000002096 quantum dot Substances 0.000 claims 1
- 229920002725 thermoplastic elastomer Polymers 0.000 abstract description 4
- 229920001169 thermoplastic Polymers 0.000 abstract description 3
- 239000004416 thermosoftening plastic Substances 0.000 abstract description 3
- 229920000642 polymer Polymers 0.000 abstract description 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000002585 base Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- -1 ARC Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000013047 polymeric layer Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 241000409201 Luina Species 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229940065285 cadmium compound Drugs 0.000 description 1
- 150000001662 cadmium compounds Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- DEPUMLCRMAUJIS-UHFFFAOYSA-N dicalcium;disodium;dioxido(oxo)silane Chemical compound [Na+].[Na+].[Ca+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DEPUMLCRMAUJIS-UHFFFAOYSA-N 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000011416 infrared curing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
Abstract
Solder can be used moistening and glass substrate is bonded together, being better than, to guarantee to obtain in electrical equipment and electronic application, the gas-tight seal that (less infiltration) traditional polymer (thermoplastic or thermoplastic elastomer (TPE)) seals.
Description
Background of invention
1. invention field
The present invention relates to the solder for glass plate or Metal Substrate gas-tight seal system, it is used for the silica-based sun
Battery, organic system and thin layer solar cell and other electronic device such as Organic Light Emitting Diode (OLED)
In.
2. correlation technique
The forming method of conventional gas-tight seal includes printing and calcining paste composition, and said composition includes glass
Glass powder and organic solvent/adhesive system.The shortcoming of this kind of system includes needing to roast at very high temperatures
Burn, such as 800 DEG C, and the embedding of organic residue and adhesive system be (such as, in gas-tight seal
Ethyl cellulose) unburnt problem.This embedding cause gas-tight seal (such as solar cell or
The undesirable pollution of the active layer sealed in OLED).
Accordingly, it would be desirable to existing hermetic sealing technology is improved.
Summary of the invention
The present invention provides material, Seal Design, geometry and for manufacturing the processing step of sealing, and
And simplify for protecting electronic device such as solar cell, LED, OLED, plasma display etc.
The manufacture of gas-tight seal of active layer.
Various substrates, including those by the standby substrate of glass, metal, ceramic and those constitute active device
The substrate of part substrate can be by the material of the present invention together with process seal, with at this device (such as
Display device (flat screens, LED screen, lcd screen, Plasmia indicating panel), organic light emission two
Pole pipe (OLED), solar cell and solar panel, be even applied to the window of building and automobile)
Interior generation gas-tight seal.
Solder can be used for moistening and glass substrate be bonded together, and is better than (less permeability) with true acquisition
The gas-tight seal that traditional polymer (thermoplastic or thermoplastic elastomer (TPE)) seals.The sealing of welding is permitted
Permitted broader operating temperature range, the resistance to environmental condition improved, such as, wind, rain, thing can also be kept simultaneously
Reason abrasion and the degeneration caused due to freeze thaw cycle or other extreme temperature.High temperature in desert
In the most several hours, such as 80 DEG C can be changed to from-20 DEG C with low temperature.Solder plasticity flows to subtract
Slight fever expansion mismatch stress, thus reduction or the cracking of elimination substrate and/or solder separate from substrate.
It is sensitive that solder seals the degeneration caused ultraviolet (that is, sunlight) unlike polymeric seal.Solder can
Stand ultrasonic amplitude transformer process, magnetic induction heating or vortex flow (eddy current) to realize engaging.
Accompanying drawing explanation
Fig. 1 schematically shows the electronic device of the broad sense gas-tight seal of the present invention.
Fig. 2 schematically shows the electronic device of the selectable gas-tight seal of the present invention.
Fig. 3 schematically shows the electronics device of the selectable gas-tight seal of the use metal forming of the present invention
Part.
Fig. 4 schematically shows the electronic device of the selectable gas-tight seal of the present invention, and it is at substrate
Metal forming is used on end.
Fig. 5 schematically shows the feedthrough (feedthrough) of gas-tight seal.
Detailed description of the invention
Inventors have discovered that and connect by ultrasonic excitation eutectic solder between two glass plates
Close two glass plates, can cause obtaining gas-tight seal.By reasonably selecting the glass being dispersed in solder
Powder and reasonably select substrate glass composition and feedthrough, TCE can be mated.
The geometry of various sealings is all possible, such as, sealing can be formed at bottom glass substrate,
Between the edge of the preforming of top glass substrates, and along the end of active layer (such as OLED)
Side and plastic layer (EVA or other film), as shown in Figure 1.
In fig. 1 it is shown that the schematic diagram of a part for the PV device of the gas-tight seal of broad sense.The wherein end
Portion's glass substrate 110 includes the edge 115 of integrated preforming, and it can be by melted or calcining substrate
Material and add on bottom glass substrate 110, or by suitable cutting with shape sufficiently thick substrate
Material (such as glass) block forms the edge 115 of the preforming integrated with end glass substrate 110.
Alternately, encapsulant or can be applied on end glass substrate 110 by printing, then calcine with
Sintering forms the edge 115 of integrated preforming.Calcining can be implemented during the tempering cycle, such as glass
The tempering cycle.
In this respect, described substrate can be same or different, and can from glass, the glass of coating,
Pottery or metal select.Described substrate can use one or more coatings to coat, and such as, conduction is coated with
Layer glass, tin indium oxide, the zinc oxide of aluminum doping, metal-oxide, ARC, SiNxCoating,
Si3N4Coating and combinations thereof.
One example is the glass substrate using conductive oxide coating.Another example can by sputtering,
CVD or metal salt back method realize providing coating (metallized joint on substrate (such as glass)
Layer), to provide metal or metal-oxide on the surface of the glass.
Bottom glass substrate 110 is mounted with active layer 120.Finally protected by the gas-tight seal of the present invention
Protect is exactly this active layer 120.Subsequently, polymeric film 130 is layered in active layer 120 and top glass
In at least one in substrate 140.Top glass substrates 140 is arranged to be in close contact with active layer 120.
At the edge 115 of preforming and active layer 120, polymeric film 130 and top glass substrates 140
Edge between leave gap 150, for by encapsulant fill enter.This encapsulant can be any
Welding material, generally include in Pb, Sn, Bi, In, Ag, Zn, Sb and/or Cu or many
Individual.Lead-free solder is preferably used, includes but not limited at Sanka Ganesan and Michael Pecht
Editor " leadless electronic (Lead free Electronics, 2004 Edition, CALCE publication,
Maryland university, Park institute, Md.Number:0-9707174-7-4) in listed by the 56-62 page
Those solders gone out, are incorporated herein by reference.This kind of solder include those have formula Sn-Ag,
Sn-Ag-Bi, Sn-Ag-Cu, Sn-Cu, Sn-Ag-Cu-Sb, Sn-Bi, Sn-Zn-Bi and other formula
Solder.It is contemplated that use soldering or brazing, including the side being known as " active metal brazing or soldering "
Transition elements in method such as Ti, Zr, V, Nb, Hf, Mn.These elements promote scolding tin or bit copper exists
The suitably moistening under atmospheric condition and between nonmetallic substrate such as glass or pottery and joint.
Described encapsulant can also be thermoplasticity or thermoset copolymer material, but, required is airtight
Property may reduce, and can not fully realize advantages of the present invention.Similarly, described gastight material is permissible
It is glass dust, such as, zinc borosilicate or bismuth borosilicate.Glass base seals and is typically rigidity, if
It is improper to design, and it may split under alternate load.
When described encapsulant is solder or glass dust, it is critically important for selecting material, in order to it can be abundant
Ground moistening substrate, and can be with the thermal coefficient of expansion (CET) of substrate or plasticity yield (for metal
Solder) coupling, to reduce or to eliminate expansion mismatch stress.Therefore brazing metal seals can be favourable.
The localization energy or Distributed Power Resource 180 can be used to dissolve and make this encapsulant flow with completely
Fill gap 150, be consequently formed sealing 170.The suitably localization energy includes UV, visible ray, wideband
Band infrared curing or heating source, laser, flame sensing or combinations thereof.Distributed Power Resource includes thermosetting
Change, ultrasound wave, natural gas fired incinerators, magnetic induction and vortex flow heating source.
Seeing the geometry of the second sealing in Fig. 2, this is the deformation of the shape shown in Fig. 1.Fig. 2
In reference be in Fig. 1 the reference of constructed feature plus 100.Bottom glass substrate 210
Including integrated preforming edge 215, it can be from combining the glass from one block of solid that Fig. 1 is discussed
Formed, it is also possible to be not.Formed if not from one block of single glass, then encapsulant such as enamel can quilt
Being printed onto the edge of top glass substrate 210, to form the edge of preforming, it is also known as frame 215.
Suitably enamel can be printed or be otherwise applied to bottom glass substrate 210 and top glass base
The edge of plate 240.Then bottom glass substrate 210 and top glass substrates 240 were forged within the tempering cycle
Burn, to prepare edge 215 and boundary zone 245 respectively.Thermoplastic such as EVA layer is laminated to bottom
To cover active layer 220 on glass substrate 210, and it is laminated on top glass substrates 240, incite somebody to action the two
Shape film forming layer 230 compressed together.Gap is left between the edge 215 and boundary zone 245 of preforming
250, wherein it is added with encapsulant such as solder and/or glass dust (being all described herein).According to preformation
The edge 215 of type, boundary zone 245 and the precise geometry of active layer 220, it could even be possible at base
After plate, sealing and active layer are properly positioned, and after encapsulant is filled, also remain with gap.This will
Have no effect on the air-tightness of so sealing of formation.Seal 270 by any localization energy described herein
280 heat-sealable material are formed.
Structure and the advantage of heat protocol in Fig. 1 and 2 are at least double.Owing to encapsulant is nothing
Machine, it is not necessary to remove organic bond and (such as traditional printing, be dried and institute in the case of the paste of calcining
It is frequently necessary to).Second, because what encapsulant was locally heated, so substrate is not heated, substrate mistake
Heat or problem of Cracking seldom or do not exist.
In figure 3, head substrate 340 abutted to the edge 315 of precalcining, metal forming 360 is covered in
On Er Zhe and use Distributed Power Resource such as ultrasonic sealing.Especially, if it is desired, bottom glass substrate
310 and top glass substrates 340 can be modified, and be respectively provided with the edge 315 of precalcining and pre-
The boundary zone 345 of calcining.The edge of precalcining is provided with for the enamel primary surface by metal forming 360 moistening,
This metal forming is melted and moistening by application Distributed Power Resource 380 (such as ultrasonic amplitude transformer).Due to limit
Edge 315 and boundary zone 345 are that the enamel of preroast substrate 310 and 340 respectively is formed, and these enamel moistens
Wet metal forming 360, it is prepared by the thin slice of disclosed solder alloy elsewhere herein.Metal forming can include
The metal of any amount of relatively low fusing point, such as, Ag, Al, Bi, Cu and Sn or they
Alloy.
In the diagram, the gas-tight seal formed by metal forming is applied to the end of substrate and heating is protected
Protect active layer.Especially, bottom glass substrate 410 and top glass substrates 440 each has applying
To the edge enamel 415 at its edge and/or be applied at least one of surface enamel 445 of its outer surface.
Edge enamel 415 and surface enamel 445 then in tempering cycles by preroast, formed and be easy to by solder
The enamel edge of the solid-state of moistening or cushioning surface.Active layer (or device) 420 is applied to
On top glass substrates 410, applying polymeric layer 430 the most thereon, and bottom glass substrate 440 quilt
It is placed on above polymeric layer.Metal forming 460 is placed with covering top glass substrates 410 and bottom glass
Gap between glass substrate 440, and contact with edge enamel pad 415 and/or surface enamel pad 445.
Can heat and melt this metal forming to engage enamel pad, or use solder to carry out moistening and by tinsel
Engage with enamel pad.Both of which forms gas-tight seal.
The active layer protected with barrier layer by the sealing of the present invention include solar cell, solar cell contact,
Organic photovoltaic devices, plasma display equipment, nanocrystal displays, electrochromic device, electroluminescent change
Color material system, the particle device of suspension, micro-blind glass, liquid crystal apparatus, intelligent window, switchable window
Family, intelligent glass, E glass, LED, SED, FED, OLED, LCD, DLP, FLD, IMOD,
TDEL, QDLED, TMOS, TPD, LCL, LPD or OLET.
Finally protected by the barrier layer of the present invention, gas-tight seal, packing ring or sealant is active layer
120,220,320 and 420.Product includes that those ProductNames or trade mark are Sageglass
And Sun
ValveTMThe product sold, as active layer used herein or active device.
Fig. 5 shows embodiments of the present invention, and it is for producing internal active layer and external connection
The feedthrough of gas-tight seal.Conducting feed throughs 520 is placed on the top of substrate 510.Top prebake in feedthrough
Burning has enamel layer 535, and sealing at solder provides insulation between 525 and feedthrough 520.At head substrate 540
Be formed with solder layer 525 on the enamel layer 535 of preroast.Use pressure 580, bottom substrate 510 He
Head substrate 540 is pressed together, and such solder layer 525 is by bottom substrate and enamel layer 535 and presents
Connect tactile.Use localization or scattered energy carrys out the melting bed of material and makes it flow, to be formed wherein
There is the sealing of feedthrough.
A lot of changes and the combination of these design concepts in Fig. 1-5 can be prepared, and it broadly falls into this
Bright scope, as long as using metal solder layer or metal forming as a part for joint technology.
Embodiments of the present invention are the methods for gas-tight seal active layer, comprising: (a) is at the first base
The edge with integrated preforming is formed on plate；B () disposes active layer on described first substrate；(c)
Second substrate is disposed in intimate contact with active layer, stays between the edge and the edge of active layer of preforming
Lower gap；D encapsulant is added to gap by ()；And (e) applies the energy and heats this encapsulant
And make it flow to be completely filled with this gap, thus form sealing wherein.In above-mentioned steps any two
Between individual, such as, between step (b) and (c), step can be increased so that polymeric film is laminated to institute
State at least one in active layer, first substrate and the second glass substrate.Described substrate can be glass.
Energy source can be localization, and select free ultrasound wave, visible ray, ultraviolet light, broadband infrared light,
In the group that laser, sensing and combinations thereof are formed.Alternately, described energy source can be scattered, and
In the group that choosing freely heat heating, magnetic induction heating, convection furnace and vortex flow are formed.Can also be used other
Electromagnetic energy source, there is wavelength 250-2500nm, or 500-2000nn, or 750-1750nm
Or 750-1500nm is available, but can also be with other wavelength.
For moistening encapsulant and make it flow to be formed gas-tight seal, other embodiments of the present invention bag
Include localization energy deposition, encapsulant e.g. solder or metal forming.This kind of material typically has low
In the fusing point of about 970 DEG C, preferably shorter than 700 DEG C, preferably shorter than 550 DEG C, and continue preferably shorter than 500 DEG C,
Less than 450 DEG C, less than 400 DEG C, and less than 350 DEG C.Such localization energy deposition can include that sensing adds
The heating of heat, Infrared Heating, broadband, ultrasonic, microwave heating and laser roasting.
Especially, with sensing heating due to the ability of its selective heating advantageously, it is permissible for laser
The extremely rapidly metal in melting solder, it is only necessary to one millisecond (10-3Second).
On one or more substrates needing being sealed that weld filler can be applied in sublayer, its can include to
Few first sublayer and at least one second sublayer.Different sublayers includes different metals or metal
Combination, such as, at least one first sublayer has the electromagnetism (EM) higher than at least one the second sublayer and inhales
Yield.This at least one second sublayer is adjacent with substrate, and this at least one first sublayer not with substrate phase
Adjacent.In another one embodiment, incide sublayer at least 30% EM energy, preferably at least
40%, particularly preferably at least 50%, more preferably at least 60% by least one the first layers absorption.Sublayer
In at least one can not absorb infrared energy.In another one embodiment, incident EM energy
Absorption occur mainly in the first sublayer or the interface between sublayer.In such embodiment,
Second sublayer does not the most absorb EM energy, it means that it absorbs the incident EM energy less than 20%.
Preheating can be used to eliminate or reduce the cracking of glass substrate, this is in traditional formation gas-tight seal
Method is ever-present problem, uses scattered energy and/or organic the most in the seal
In the case of agent.
Solar cell is as active layer.As active layer (120,220,320,420), solar cell can
It is prepared to module, and uses processes disclosed herein to be sealed against together.Solar cell is generally by half
Prepared by conductor material, such as silicon (Si), and sunlight is converted to useful electric energy by it.Solar cell contacts
Generally prepared by the LED reverse mounting type of silicon, wherein by the phosphorus (P) deriving from suitable phosphorus source is diffused into p-type
Silicon chip is formed the PN junction of needs.The side of the sunlight incidence of silicon chip is general coated with ARC
(ARC), for stoping the reflection loss of sunlight.This ARC adds the efficiency of solar cell.Known
It is connected with the N-side of silicon as the two-dimensional electrode comb mesh pattern of front contact, and the painting of mainly aluminum (Al)
Layer is connected (back contacts) with the P-side of silicon.Moreover it is known that as the contact of silver back contacts, by silver-colored or silver-colored
Prepared by-aluminum cream, the N-side of printed and roasting to silicon, can make welded gasket and next one solar cell mould
One battery of block realizes electrical connection.This contact is the electricity outlet being connected to external loading from PN junction.Right
In thin film solar battery module, active component can quasiconductor based on other, such as, non-crystalline silicon, the tellurium of cadmium
Compound or Copper indium gallium selenide.The solar cell of N-type also it is expected to.
Solar cell in typical P-type silicon based on wafer is built as example although there has been described,
But the different changes of crystal-silicon solar cell, such as back contact battery, amorphous silicon solar cell, organic
The different changes of photovoltaic cell, different thin film solar cells such as CdTe, CIGS, can think here
As active layer.Similarly, photochromic material system is here it is also conceivable that as active layer.
In the present invention, the details about glass and active layer can be special in one or more following U.S.
Profit application finds, all these all owns together, and all these be all incorporated herein by ginseng
Examine: 10/864,304；10/988,208；11/131,919；11/145,538；11/384,838；11/774,632；
11/846,552；12/097,823；；12/298,956；12/573,209；61/324,356；61/328,258；
61/366,568；And 61/366,578.It addition, the most useful base plate glass includes sodium-calcium-silicate glass
Glass, alkali metal alkaline earth metal Boroalumino silicate glasses or Boroalumino silicate glasses, usually contain 50-80%
The Silicon stone of weight.In general, the thermal expansion of this glass can be 30-100 × 10-7/℃.Exemplary
Compositions includes by weight: SiO250-75wt%；R2O3Such as Al2O3Or B2O3: 2-20wt%；
RO such as CaO, MgO:5-29wt%；R2O such as Li2O、Na2O and K2O:0.05-51wt%.
Embodiments of the present invention are a kind of methods that formation comprises the photovoltaic device of two inorganic substrates, including
Following steps: (a) applies a sealant at least one substrate；B () by described substrate arrangement together；
And (c) by focus on the energy guide to sealant, in order to two substrates at least some of between shape
Become to seal.
Another embodiment of the invention is a kind of for connecting the close of two or more inorganic substrate
Envelope agent material system, it is for forming the airtight construction of protection electronically active layer, and described sealant system includes
Solder composition.
The further embodiment of the present invention is a kind of sealant material system, and it is for the energy focused in application
The two or more inorganic substrates being included in photovoltaic device are connected during amount source.
Each numerical range with zero as boundary disclosed herein, in an alternative embodiment, has relatively low
Border 0.1% rather than zero.Term " comprises " and be " substantially by ... composition " and " by ... composition " to be provided
Support.It is envisioned that the single numbers such as any type of parameter disclosed herein, temperature, weight, percentage ratio
Value, example, as shown in a form, is supported as the end points offer of scope for such numerical value.Scope can
Defined by two such numerical value.In a single embodiment, it is possible to use more than one glass group
Compound, and it is envisioned that said composition contains the numerical value in the different lines in form.
All scopes disclosed herein should be understood to include the value of beginning and end scope, whole
Value and the value of the most all subregions.Such as, the statement of scope " 1-10 " is considered to be and includes from minimum
Any and all values between 10 (and including) of 1 and maximum of value, and all of subrange；
It is to say, from the beginning of minima 1 or greater value, the institute terminated with the value of maximum 10 or less
There is subrange, such as, 1.0-2.7,3.3-8.9,5.7-10 etc..Such as, " from by ... in the group of composition select
Select at least one " restriction should be " at least two ", " at least three " etc. and provide and support, and include it
In arrange containing this in the embodiment of all elements.
Claims (20)
1. the method sealing active layer airtightly, including:
Form the edge of integrated preforming the most on the first substrate；
B. active layer is placed on described first substrate；
C. second substrate is disposed in intimate contact with described active layer, in the edge of described preforming and institute
State leaving gap between the edge of active layer；
D. encapsulant is added to described gap；And
E. apply encapsulant described in energy sources for heating and make it flow to be filled up completely with described gap, thus existing
Wherein form sealing.
Method the most according to claim 1, farther includes: after (b) and before (c),
(b1) polymeric film is laminated at least one in described active layer, first substrate and second substrate.
Method the most according to claim 1, wherein, at least one substrate is glass.
Method the most according to claim 1, wherein, the described energy is localization, and choosing freely surpasses
In the group that sound wave, visible ray, ultraviolet light, broadband infrared line, laser, sensing and combinations thereof are formed.
Method the most according to claim 1, wherein, the described energy is scattered, and choosing freely heat
In the group that heating, magnetic induction heating, convection furnace and vortex flow are formed.
Method the most according to claim 1, wherein, by cutting with forming board material block with shape
Become the edge of the described preforming integrated with described first substrate, form edge and first base of described preforming
Plate.
Method the most according to claim 1, wherein (a) forms integrated preformation on the first substrate
The step at the edge of type includes being applied to baseplate material described first substrate, and calcine this baseplate material so that
Its sintering, thus forms the edge of described integrated preforming on described first substrate.
Method the most according to claim 7, wherein, described calcining is to implement during the tempering cycle
's.
Method the most according to claim 1, wherein, described encapsulant is solder, and it includes choosing
Metal in the group that Pb, Sn, Bi, In, Ag, Zn, Sb, Cu and combinations thereof are formed.
Method the most according to claim 1, wherein, described encapsulant is lead-free solder, its bag
Include selected from Sn-Ag, Sn-Ag-Bi, Sn-Ag-Cu, Sn-Cu, Sn-Ag-Cu-Sb, Sn-Bi and Sn-Zn-Bi
Metal in the group formed.
11. methods according to claim 10, wherein, described solder farther include selected from Ti,
Element in the group that Zr, V, Nb, Hf and combinations thereof are formed.
12. methods according to claim 1, wherein, described substrate can be identical or different, and
Select in the group that free glass, the glass of coating, pottery or metal are formed.
13. methods according to claim 1, wherein, with the oxygen selecting the doping of free tin indium oxide, aluminum
Change zinc, metal, metal-oxide, ARC, SiNxCoating, Si3N4Coating and combinations thereof institute group
At least one in the group become coats described substrate.
14. methods as claimed in claim 13, wherein, by choosing freely sputter, CVD, slaine
Method in the group that reducing process and combinations thereof is formed, coats described substrate.
The application in the device comprising active layer of the method described in 15. claim 1, wherein, described device
Part is selected from solaode, nanocrystal displays, electrochromic material system, suspended particle device, micro-
Blind glass, liquid crystal device, intelligent window, LED, surface-conduction-electron emission display
SED, field-emitter display FED, Organic Light Emitting Diode OLED, liquid crystal display LCD, number
Word optical processing displayFerrum liquid crystal display FLD, interferometric modulator display IMOD, thickness
Film electroluminescent display TDEL, light emitting diode with quantum dots QDLED, time division multiplex optical shutter show
Device TMOS, pixel flexible display TPD, liquid crystal lens shape display LCL, laser fluorescence body show
In the group that device LPD or organic light-emitting transistor display OLET is formed.
16. 1 kinds of photovoltaic devices, it is included by the gas-tight seal formed by the method described in claim 1
At least two inorganic substrate engaged.
17. 1 kinds of methods forming photovoltaic device, comprise the steps:
A., first inorganic substrate and the second inorganic substrate are provided；
B. on described first inorganic substrate, form the edge of integrated preforming；
C. sealant is applied at least the first inorganic substrate in described substrate；
D. by described substrate arrangement together so that at the described integrated preformation of described first inorganic substrate
Form gap between edge and the edge of described second inorganic substrate of type, make described sealant be positioned at described between
In gap, and sealant is made to contact with the second inorganic substrate in described substrate；And
E. the energy focused on is guided to described sealant with at described first inorganic substrate and the second inorganic base
Plate at least some of between formed seal.
The method of 18. 1 kinds of active devices preparing sealing, including:
Form the edge of integrated preforming the most on the first substrate；
B. active layer is placed on described first substrate；
C. on second substrate, form integrated boundary zone；
D. polymeric film is laminated at least one in described active layer, first substrate and second substrate；
E. second substrate is disposed in intimate contact with described active layer, on edge and the limit of described preforming
Leaving gap between marginal zone；
F. encapsulant is added to described gap；And
G. the application energy is to heat described encapsulant and to make it flow, thus is filled up completely with described gap,
It is consequently formed sealing.
The method of 19. 1 kinds of active devices preparing sealing, including:
Form the edge of integrated preforming the most on the first substrate；
B. active layer is placed on described first substrate；
C. stacking polymeric film is to cover described active layer；
D. second substrate is disposed in intimate contact with described active layer, and the edge of adjacent described preforming；
E. applied metal paper tinsel is to contact the edge of described preforming and described second substrate；And
F. the application energy is to heat described metal forming and to make it flow, thus by described first substrate and second
Base plate seals is together.
The method of 20. 1 kinds of active devices preparing sealing, including:
A. the edge enamel of integrated preforming is formed at least one in first substrate and second substrate；
B. surface enamel is formed at least one in first substrate and second substrate；
C. active layer is placed on described first substrate；
D. stacking polymeric film is to cover described active layer；
E. described second substrate is disposed in intimate contact with described active layer；
F. applied metal paper tinsel is to contact the edge enamel on described first substrate and second substrate or described the
Surface enamel on one substrate and second substrate；And
G. the application energy is to heat described metal forming and to make it flow, thus by described first substrate and second
Base plate seals is together.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36657810P | 2010-07-22 | 2010-07-22 | |
| US61/366,578 | 2010-07-22 | ||
| PCT/US2011/045050 WO2012012745A2 (en) | 2010-07-22 | 2011-07-22 | Hermetically sealed electronic device using solder bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103620761A CN103620761A (en) | 2014-03-05 |
| CN103620761B true CN103620761B (en) | 2016-11-30 |
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