CN103613115A - Method for synthesizing ZnO/ZnSe (zinc oxide/zinc selenide) coaxial nano structure through gas-phase anion exchange - Google Patents

Abstract

The invention discloses a method for synthesizing a ZnO/ZnSe (zinc oxide/zinc selenide) coaxial nano structure through gas-phase anion exchange. The method comprises the following steps: placing a substrate on which a ZnO seed layer is carried in 30 ml of a mixed solution containing 0.05 M of Zn(NO3)2 and 0.05 M of HMT (hexamethylene tetramine), and placing the obtained object in a reaction kettle to carry out heat preservation 9 h at a temperature of 100 DEG C, so that a white matter ZnO nanorod is obtained; placing the ZnO nanorod in the middle of a furnace chamber of a vacuum tube furnace, placing a porcelain boat in which 1.58 g of Se powder is accommodated in the tail end of the furnace chamber of the vacuum tube furnace, vacuumizing the furnace chamber until the pressure is 1.37 kPa, heating the furnace chamber to 600 DEG C, and after the reaction is completed, naturally cooling the obtained product, so that a ZnO/ZnSe coaxial nanorod array is obtained. According to the invention, the ZnO/ZnSe coaxial nanorod is good in crystallinity and simple in operation method; the method disclosed by the invention is a new method for synthesizing ZnO/ZnSe coaxial nanorod materials by using a template gas-phase anion exchange method.

Description

The method of gas phase anionresin synthesizing zinc oxide/zinc selenide co-axial nano structure

Technical field

The present invention relates to a kind of nano material, relate in particular to the method for the synthetic ZnO/ZnSe co-axial nano structure of a kind of gas phase anionresin.

Background technology

ZnSe is a kind of nontoxic, eco-friendly N-shaped semi-conductor, and band gap is about 2.7ev, has good specific absorbance, so the nanostructure of ZnSe is widely used in sun power conversion, the fields such as photochemical catalysis.Thereby a kind of narrow gap semiconductor of ZnSe Chang Zuowei and WBG semiconductor ZnO coordinate and form II type heterojunction nanostructure and have outstanding performance at electronics aspect separated and transmission, thereby there is application more widely at solar cell and photodegradation field.Therefore ZnO/ZnSe coaxial heterojunction nanostructure has good application prospect.But the most of method that adopts liquid phase of the method for the ZnO/ZnSe coaxial heterojunction nanostructure of having reported at present, can only obtain the structure of the nanoparticle sensitized ZnO nano-wire of ZnSe of polycrystalline, the ZnSe crystallinity obtaining is poor, for follow-up application brings many difficulties.

Summary of the invention

Object of the present invention, be that the method that overcomes the synthetic ZnO/ZnSe coaxial heterojunction nanostructure of prior art obtains the poor shortcoming of ZnSe crystallinity, provide gas phase anionresin under a kind of high temperature easy and simple to handle to synthesize in a large number the method for ZnO/ZnSe co-axial nano structure.

The present invention is achieved by following technical solution.

A method for the synthetic ZnO/ZnSe co-axial nano structure of gas phase anionresin, has following steps:

(1) substrate that is loaded with ZnO Seed Layer is put in to 30mL and contains 0.05M Zn (NO ₃) ₂, with 0.05M HMT in the mixing solutions of time hexamethyl tetramine, be placed at 100 ℃ of reactors and be incubated 9h, obtain white mass ZnO nanorod substrate;

(2) the ZnO nanorod substrate of step (1) is put in to the furnace chamber middle part of vacuum tube furnace, to 1.58g Se powder porcelain boat is housed put into the furnace chamber end of vacuum tube furnace again, be evacuated to 1.37kPa, be heated to 600 ℃ of insulation 60min, question response finishes rear naturally cooling, makes yellow substance ZnO/ZnSe nanometer stick array.

The reaction equation of described step (2) is:

4ZnO(s)+3Se ₂(g)→4ZnSe(s)+2SeO ₂(g)。

The invention has the beneficial effects as follows, take ZnO nanorod as template, the simple substance Se powder of take is reaction raw materials, anion exchange reaction occurs in gas phase and obtain ZnO/ZnSe coaxial heterojunction nanostructure.The ZnO/ZnSe coaxial heterojunction nanostructure uniformity that the method is synthetic, working method is easy, is that under a kind of novel high temperature, the method for ZnO/ZnSe co-axial nano structure is synthesized in gas phase anionresin in a large number.

Accompanying drawing explanation

Fig. 1 is the scanning electron microscope (SEM) photograph of ZnO/ZnSe co-axial nano bar structure of the present invention;

Fig. 2 is the energy spectrogram of ZnO nano-wire raw material of the present invention and the product ZnO/ZnSe co-axial nano rod obtaining;

Fig. 3 is the transmission electron microscope picture of ZnO/ZnSe co-axial nano bar structure of the present invention;

Fig. 4 is ZnO nanorod raw material of the present invention and the product ZnO/ZnSe co-axial nano rod XRD figure obtaining.

Embodiment

The present invention is raw materials used is analytical reagent, and specific embodiment is as follows.

(1) substrate that is loaded with ZnO Seed Layer is put in to 30mL and contains 0.05M Zn (NO3) 2, HMT(hexamethyl tetramine of 0.05M) in mixing solutions, be placed at 100 ℃ of reactors and be incubated 9h, obtain white mass ZnO nanorod.

(2) the ZnO nanorod substrate of step (1) is put in to vacuum tube furnace furnace chamber middle part, 1.58g Se powder porcelain boat is housed and puts into vacuum tube furnace furnace chamber end, be evacuated to 1.37kPa, be heated to 600 ℃ of insulation 60min, question response finishes rear naturally cooling, prepares yellow substance ZnO/ZnSe nanometer stick array.

Its reaction equation is as follows:

4ZnO(s)+3Se ₂(g)→4ZnSe(s)+2SeO ₂(g)。

Figure (1) (3) are respectively SEM and the TEM image of ZnO/ZnSe co-axial nano rod, are obtained uniformly, had as can be seen from Figure the nanometer rod of better pattern by this method.Figure (2) is the power spectrum of ZnO/ZnSe co-axial nano rod, can see by raw material ZnO nanorod and change into by this method and contain ZnO and ZnSe product simultaneously.Figure (4) is the XRD figure picture of ZnO/ZnSe co-axial nano rod, illustrate that product that we obtain is the crystalline structure of pure ZnO/ZnSe, and the ZnSe crystallinity obtaining is good.

Claims (2)

1. a method for ZnO/ZnSe co-axial nano structure is synthesized in gas phase anionresin, has following steps:

(1) substrate that is loaded with ZnO Seed Layer is put in to 30mL and contains 0.05M Zn (NO ₃) ₂, with 0.05M HMT in the mixing solutions of time hexamethyl tetramine, be placed at 100 ℃ of reactors and be incubated 9h, obtain white mass ZnO nanorod substrate;

(2) the ZnO nanorod substrate of step (1) is put in to the furnace chamber middle part of vacuum tube furnace, to 1.58g Se powder porcelain boat is housed put into the furnace chamber end of vacuum tube furnace again, be evacuated to 1.37kPa, be heated to 600 ℃ of insulation 60min, question response finishes rear naturally cooling, makes yellow substance ZnO/ZnSe nanometer stick array.

2. according to the method for the synthetic ZnO/ZnSe co-axial nano structure of the gas phase anionresin of claim 1, it is characterized in that, the reaction equation of described step (2) is:

4ZnO(s)+3Se ₂(g)→4ZnSe(s)+2SeO ₂(g)。

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