CN103604985B - A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure and method - Google Patents
A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure and method Download PDFInfo
- Publication number
- CN103604985B CN103604985B CN201310517754.XA CN201310517754A CN103604985B CN 103604985 B CN103604985 B CN 103604985B CN 201310517754 A CN201310517754 A CN 201310517754A CN 103604985 B CN103604985 B CN 103604985B
- Authority
- CN
- China
- Prior art keywords
- circular waveguide
- pulse
- powered microwaves
- detecting structure
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure of the present invention's design is with the hot carrier's effect of highfield in semiconductor inside for basic functional principle, and the bulk resistor change according to semiconductor probe chip realizes the real-time detection of the HIGH-POWERED MICROWAVES pulse of different mode in circular waveguide.Detecting structure is made up of circular waveguide and semiconductor probe chip.The peak power can bearing microwave pulse reaches hundred MW, and response speed is less than 1ns, and the integrated difficulty of detection chip processing and detecting structure is less.This detecting structure is applicable to the online real-time detection of microwave section highpowerpulse wave source, the polarised direction monitoring of microwave pulse and mode symmetry analysis etc.
Description
Technical field
The invention belongs to electromagnetic wave detection apparatus design scheme, be specifically related to a kind of circular waveguide detecting structure and method of microwave section highpowerpulse being carried out to real-time detection.
Background technology
Along with the development of High-Power Microwave technology, High-Power Microwave has entered in many aspects and has applied even practical stage.High-power microwave source is as the Primary Component of application, and the microwave pulse that high-frequency structure produces is radiated free space by the circular waveguide being mostly integrated with electromagnetic horn by end, wherein also often comprises the functional structures such as circular waveguide patten transformation and curved waveguide.The output pulse detection one of current high-power microwave source carries out reception in radiation field to detect, but this method cannot provide the output state of microwave source in real time in the application; Another kind of then be by the coupled structure such as aperture or probe in device microwave pulse coupling after carry out real-time detection again, but which increase the complex structure degree of application system, and coupled structure may cause the distortion of microwave pulse waveform, cause measured waveform distortion etc.In addition, the polarised direction that microwave pulse transmits in circular waveguide and pattern elements be determined, also need to carry out real-time detection to the microwave pulse in circular waveguide.Export the circular waveguide detecting structure of pulse be that a technical difficulty is large and the problem that demand is urgent so develop a kind of high-power microwave source that is directly used in.
Research shows, when the extra electric field of semiconductor is stronger (10
3v/cm ~ 10
5v/cm), the effective temperature of charge carrier raises, and mobility reduces, thus cause conductivity semiconductor to reduce, make current density and electric field intensity no longer meet proportional relation, opposing ohmic law there occurs and departs from, the semiconductor heat carrier effect under Here it is highfield.Based on this effect principle, the direct detection of highpowerpulse can be realized, be conducive to the use reducing the labyrinths such as coupling and decay or system.From the eighties in last century, the High-Power Microwave of Lithuania's semiconductor physics Research Institute series of rectangular waveguiding structure and coaxial configuration and millimeter wave detector, for the direct measurement of high-power microwave source radiation field signal.But the sniffer that up to now, there is not yet based on other waveguiding structure of hot carrier's effect and method.
Summary of the invention
The present invention proposes a kind of circular waveguide detecting structure of combining based on circular waveguide and hot carrier's effect and method, the online real-time detection of peak power in the nanosecond HIGH-POWERED MICROWAVES pulse of hundred megawatt magnitudes can be realized.
Technical solution of the present invention is:
A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure, its special character is:
The detection chip 2 comprising circular waveguide 1 and be arranged in circular waveguide;
The frequency of radius by microwave pulse to be measured of described circular waveguide or the front end delivery structures shape of microwave pulse, its length is at least 3 times of the wavelength of microwave pulse to be measured;
One end of described detection chip and the short circuit of circular waveguide wall, its other end is then insulated with circular waveguide wall and is connected with the external world by coaxial cable.
Above-mentioned detection chip is made up of two identical silicon single crystal wafers, and is curvedly placed on circular waveguide wall successively; Described two chip tops are communicated with short circuit, and the bottom of one of them chip and the short circuit of circular waveguide wall, insulated with circular waveguide wall and be connected with the external world by coaxial cable in another chip bottom.
Above-mentioned silicon single crystal wafer selects N-shaped silicon materials, and does with good Ohmic contact on top and bottom, the copper of sputtering micron dimension thickness or gold metal layer.
The top of above-mentioned silicon and the thickness h of bottom metal level
1<0.1mm, h
2<0.01mm.
A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detection method, its special character is: comprise the following steps:
1] according to the radius R of the frequency of microwave pulse to be measured or the front end delivery structures shape circular waveguide of microwave pulse, determine the length of circular waveguide according to the wavelength of microwave pulse to be measured, require that length is 3 times of the wavelength of microwave pulse to be measured;
2] detection chip is put into the same angular position of axially different position or the different angular position of same axial positions of circular waveguide, by one end of detection chip and the short circuit of circular waveguide wall, its other end is then insulated with circular waveguide wall and is connected with the external world by coaxial cable, forms circular waveguide detecting structure;
3] by HIGH-POWERED MICROWAVES pulse to be measured from microwave source or other circular waveguide transmission structure feed-in circular waveguide detecting structure, measure the change in voltage of detection chip, resolve the electric field amplitude obtaining HIGH-POWERED MICROWAVES pulse to be measured, and then obtain pulse power.
Above-mentioned detection chip is made up of two identical silicon single crystal wafers, and is curvedly placed on circular waveguide wall successively; Described two chip tops are communicated with short circuit, and the bottom of one of them chip and the short circuit of circular waveguide wall, insulated with circular waveguide wall and be connected with the external world by coaxial cable in another chip bottom.
Above-mentioned silicon selects N-shaped silicon materials, and does with good Ohmic contact on top and bottom, the copper of sputtering micron dimension thickness or gold metal layer.
The top of above-mentioned silicon single crystal wafer and the thickness h of bottom metal level
1<0.1mm, h
2<0.01mm.
Advantage of the present invention:
1, with adopt the high-power microwave source of Circular waveguides can realize mating to be connected, to make any change without the need to source structure.Because this detecting structure adopts circular waveguide for detection waveguide, for the high-power microwave source adopting Circular waveguides, can for the size of its transmission waveguide, circular waveguide detecting structure reasonable in design, realizes being connected with direct coupling of high-power microwave source to be measured.
2, can microwave pulse signal under direct detection different mode.This detecting structure is under different circular waveguide pattern, and the response electric field in detection chip, all based on radial electric field, ensure that the accuracy of detecting structure to microwave pulse detection under different mode.
3, power can be born high.This detecting structure can bear the microwave pulse of peak power in megawatt magnitude, even can reach hundreds of megawatt under some pattern, and without the need to by any preposition decay, this not only lowers the complexity of measuring system in application, and the measuring accuracy of pulse envelope and amplitude can be improved.
4, fast response time.Under highfield effect, the hot carrier energy relaxation time of n type single crystal silicon is about 2.9ps (10
-12s), the momentum relaration time is shorter, and this makes the response time of this detecting structure very short, greatly about hundred picosecond magnitudes.
Accompanying drawing explanation
Fig. 1 is the illustraton of model of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure of the present invention;
Fig. 2 is the cross sectional representation of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure of the present invention;
Fig. 3 is the assembly structure schematic diagram of detection chip in circular waveguide;
Fig. 4 is the structural representation of the single silicon single crystal wafer in detection chip;
Fig. 5 is the relative sensitivity of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure of the present invention and the relation of frequency.
Embodiment
For realizing the online real-time detection of HIGH-POWERED MICROWAVES pulse, the present invention is directed to high-power microwave source mostly adopts circular waveguide as the feature (such as Relativistic backward-wave oscillator) of transmission structure, based semiconductor hot carrier's effect, select circular waveguide as detection chip carrier, devise rational semiconductor probe chip structure, can realize being connected with the coupling of high-power microwave source, and do any structural change without the need to microwave source, and meet the detection demand under different conventional circular waveguide pattern.The present invention is with the detection of X-band HIGH-POWERED MICROWAVES pulse for example, and giving a kind of is the design proposal of the circular waveguide detecting structure of 25mm based on radius:
1, circular waveguide:
Fig. 1 and Fig. 2 is shown in signal, and the radius R of circular waveguide 1 is by by the frequency of microwave pulse to be measured or the front end delivery structures shape of microwave pulse, and its length is at least 3 times of the wavelength of microwave pulse to be measured.In the detecting structure design example of X-band, choosing circular waveguide radius R is 25mm, and length is 15cm, can transmit the TE of two kinds of polarised directions
11mould, TE
01mould and TM
01mould, is usually used in all kinds of high-power microwave sources of X-band.
2, detection chip:
Schematic diagram is as Fig. 2, Fig. 3 and Fig. 4, and the concrete size of detection chip 2 is determined by the frequency of High-Power Microwave to be measured and circular waveguide radius.In the design example of X-band, the design parameter of chip comprises: material selects n type single crystal silicon, and resistivity gets 2 Ω cm, and length l gets 5mm, and width d gets 2.9mm, and height h gets 2mm.
The designed specific performance of X-band circular waveguide detecting structure under several common pattern is as shown in table 1.
Table 1
Below in conjunction with accompanying drawing, the invention will be further described.
As shown in Figure 1, after circular waveguide detecting structure and High-Power Microwave export structure mate and be connected, can guarantee to form original mode profile in waveguide, also very little on the impact of microwave pulse laser propagation effect; In Fig. 2 and Fig. 3, be placed on detection chip in circular waveguide by two independently silicon form, two silicon curved placements on wave guide wall, top needs short circuit to connect, vacuum (air) 5 is accompanied between two chips, the bottom of a chip is then connected with the external world by the port through wave guide wall, forms insulation course 3 between chip bottom and circular waveguide wall, as detection chip bias current inputs mouth and measuring-signal U
soutput port, the bottom of another chip then forms shorting layer 4 with wave guide wall direct short-circuit; Fig. 4 is silicon xsect.The material selection n type single crystal silicon of silicon, its top and bottom need to form good Ohmic contact, and respectively coated with being no more than the metal level 6 that 0.1mm is thick and 0.01mm is thick, i.e. h
1<0.1mm, h
2<0.01mm, with better and wave guide wall or external circuit realize good electrical connection.
Its groundwork process is: after HIGH-POWERED MICROWAVES pulse to be measured enters circular waveguide detecting structure from microwave source or other circular waveguide transmission structure, still be operated in original circular waveguide pattern, highfield produces hot carrier's effect after acting on the n type single crystal silicon chip in detection chip, causes the resistance of detection chip to increase.By measuring the change in voltage of detection chip, the electric field amplitude obtaining HIGH-POWERED MICROWAVES pulse to be measured can be resolved, and then obtain pulse power.Other required function structure, such as radiating antenna and mode converter etc. can be connected after circular waveguide detecting structure, can not have an impact to the transmission of measurement and microwave pulse.
This design makes detection chip and radial electric field substantially keep vertical, not only reduce the impact of inserting Electric Field Distribution of detection chip, reduce voltage standing wave ratio (VSWR), and ensure that response electric field in detection chip is all based on radial electric field, can be used in the direct detection of HIGH-POWERED MICROWAVES pulse under different mode.
The relative sensitivity of detecting structure is numerically equal to the semiconductor bulk resistor relative variation caused when incident pulse power is unit value (1W), and unit is W
-1and kW
-1.In the detecting structure design example of X-band, the relative sensitivity under several conventional circular waveguide pattern and the relation of frequency are as shown in Figure 5.Can find out, for two circumference symmetric pattern TE
01and TM
01pattern, the representative value of relative sensitivity is respectively 1.6 × 10
-3kW
-1with 0.9 × 10
-3kW
-1, vertical polarization TE
11under mould effect, the representative value of relative sensitivity is 0.7 × 10
-3kW
-1, horizontal polarization TE
11under mould effect, representative value is 0.1 × 10
-3kW
-1.Detecting structure is to this response difference of different mode, detection chip can be set by the different angular position of the same angular position of position axially different in circular waveguide or same axial positions, carry out the polarised direction monitoring in circular waveguide in microwave transmission process or mode symmetry analysis.Because high-power microwave source is in high vacuum state (10
-4pa), the maximum power that bears of circular waveguide detecting structure is determined by the saturated electric field of the hot carrier's effect of n type single crystal silicon.Can estimate, it is as shown in table 1 that X-band circular waveguide detecting structure given here maximum bears power.For TE
01the TE of mould and horizontal polarization
11mould, the maximum power that bears reaches hundred megawatt magnitudes, and for TM
01the TE of mould and vertical polarization
11mould, the maximum power that bears reaches tens of megawatt.By adjusting the design parameter of detecting structure, such as, reduce the thickness of silicon and reduce the resistivity of n type single crystal silicon, the average electric field in chip can be reduced, and then can obtain and higher maximumly bear power.In addition, in X-band, the voltage standing wave ratio (VSWR) of circular waveguide detecting structure is all no more than 1.3.
For different wave bands and application demand, the various parameters of circular waveguide detecting structure, as circular waveguide radius, detection chip physical dimension and material parameter, comprise the resistivity etc. of length, width, height and n type single crystal silicon, all need to redesign.
Claims (4)
1. a HIGH-POWERED MICROWAVES pulse circular waveguide detection method, is characterized in that: comprise the following steps:
1] according to the radius R of the frequency of HIGH-POWERED MICROWAVES pulse to be measured or the front end delivery structures shape circular waveguide of microwave pulse, determine the length of circular waveguide according to the wavelength of HIGH-POWERED MICROWAVES pulse to be measured, require that length is 3 times of the wavelength of HIGH-POWERED MICROWAVES pulse to be measured;
2] detection chip is put into the same angular position of axially different position or the different angular position of same axial positions of circular waveguide, by one end of detection chip and the short circuit of circular waveguide wall, its other end is then insulated with circular waveguide wall and is connected with the external world by coaxial cable, forms circular waveguide detecting structure;
3] by HIGH-POWERED MICROWAVES pulse to be measured from microwave source or other circular waveguide transmission structure feed-in circular waveguide detecting structure, measure the change in voltage of detection chip, resolve the electric field amplitude obtaining HIGH-POWERED MICROWAVES pulse to be measured, and then obtain pulse power.
2. HIGH-POWERED MICROWAVES pulse circular waveguide detection method according to claim 1, is characterized in that:
Described detection chip is made up of two identical silicon single crystal wafers, and is curvedly placed on circular waveguide wall successively; Described two identical silicon single crystal wafer tops are communicated with short circuit, and the bottom of one of them chip and the short circuit of circular waveguide wall, insulated with circular waveguide wall and be connected with the external world by coaxial cable in another chip bottom.
3. HIGH-POWERED MICROWAVES pulse circular waveguide detection method according to claim 2, is characterized in that:
Described silicon single crystal wafer selects N-shaped silicon materials, and does with good Ohmic contact on top and bottom, the layers of copper of sputtering micron dimension thickness or layer gold.
4. HIGH-POWERED MICROWAVES pulse circular waveguide detection method according to claim 3, is characterized in that:
The thickness h of the top metal layer of described silicon single crystal wafer
1<0.1mm, the thickness h of the bottom metal level of silicon single crystal wafer
2<0.01mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310517754.XA CN103604985B (en) | 2013-10-25 | 2013-10-25 | A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310517754.XA CN103604985B (en) | 2013-10-25 | 2013-10-25 | A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103604985A CN103604985A (en) | 2014-02-26 |
| CN103604985B true CN103604985B (en) | 2016-04-27 |
Family
ID=50123226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310517754.XA Active CN103604985B (en) | 2013-10-25 | 2013-10-25 | A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103604985B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104258797B (en) * | 2014-09-19 | 2016-05-18 | 电子科技大学 | A kind of conveying type circular waveguide microwave reactor continuously |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179155A (en) * | 2007-11-12 | 2008-05-14 | 杭州电子科技大学 | H face sectoral horn antenna including filter function |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4709059B2 (en) * | 2006-04-28 | 2011-06-22 | キヤノン株式会社 | Inspection apparatus and inspection method |
-
2013
- 2013-10-25 CN CN201310517754.XA patent/CN103604985B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179155A (en) * | 2007-11-12 | 2008-05-14 | 杭州电子科技大学 | H face sectoral horn antenna including filter function |
Non-Patent Citations (3)
| Title |
|---|
| 0.14THz高功率太赫兹脉冲的频率测量;王光强 等;《物理学报》;20101231;第59卷(第12期);8459-8464 * |
| High power millimetre wave pulse sensor for W-band;M.Dagys et al.;《IET Microw.Antennas Propag.》;20070731;第1卷(第3期);757-762 * |
| 波导内置硅块对高功率太赫兹脉冲的响应";王雪峰 等;《强激光与粒子束》;20130228;第25卷(第2期);第455-460页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103604985A (en) | 2014-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Takhedmit et al. | A 2.45-GHz low cost and efficient rectenna | |
| Li et al. | UHF stacked Hilbert antenna array for partial discharge detection | |
| Kong et al. | Wide impedance-bandwidth and gain-bandwidth terahertz on-chip antenna with chip-integrated dielectric resonator | |
| Hu et al. | Experimental demonstration of a 0.34-THz backward-wave oscillator with a sinusoidally corrugated slow-wave structure | |
| CN103604985B (en) | A kind of HIGH-POWERED MICROWAVES pulse circular waveguide detecting structure and method | |
| Tekbaş et al. | AW band waveguide detector module using zero bias schowttky diode | |
| CN103398776A (en) | Overmoded high power pulse terahertz power detector | |
| CN204719132U (en) | A kind of phase detector for measuring antenna impedance | |
| Kancleris et al. | High power millimetre wave pulse sensor for W-band | |
| Kong et al. | An active e-field sensor based on laser diode for EMP measurement | |
| CN204289675U (en) | Full frequency band covers the coupling transmission of Terahertz frequency range | |
| Wang et al. | High-power terahertz pulse sensor with overmoded structure | |
| When et al. | Research of independent DC electric field sensor with wireless power supply circuit | |
| CN103698597B (en) | A kind of high-power microwave power detector | |
| CN102928996B (en) | Electronic control terahertz wave polarization beam splitter | |
| Wang et al. | Design of an on-line measuring system for 0.14 THz high-power terahertz pulse | |
| CN103500870B (en) | Reflection type resonant cavity for measuring sample surface state in profound hypothermia high-intensity magnetic field | |
| CN210037984U (en) | Multifunctional microwave measurement experimental device | |
| Peruzzi et al. | Technique for measurement of UHF RFID balanced antennas | |
| CN216626101U (en) | Eddy heating structure and low-temperature heating device | |
| Yamamoto et al. | Transmission characteristics of circular waveguide with coaxial-to-circular waveguide transitions | |
| Liao | Power Handling Capability in Waveguide Longitudinal Shunt Slot Arrays. | |
| Natrella et al. | Accurate modelling and measurement of the impedance match between UTC photodiodes and THz antennas | |
| Yang et al. | Design of an X-band photoconductive metasurface with variable amplitude control | |
| Yurchenko et al. | A resonator microwave sensor for measuring the parameters of Solar-quality silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |