CN103595290B - Modularized electronic switch for high-voltage oscillation wave generator - Google Patents
Modularized electronic switch for high-voltage oscillation wave generator Download PDFInfo
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Abstract
The invention discloses a modular electronic switch for a high-voltage oscillation wave generator, which mainly comprises a disc type printed circuit board taking an IGBT switch series connection structure as a main body, a corresponding multi-output straight-through type isolation power supply and an optical fiber control unit. According to the invention, the IGBT switch units are wound in a disc type series connection structure, voltage equalization and synchronous conduction among the plurality of IGBT switch units are realized, and the problems of low action speed and low power grade of the traditional high-voltage switch are solved. The multi-path output isolation power supply structure realizes multi-path isolation power supply under the condition of not reducing the power grade and the action speed, improves the integration level of the switch, optimizes the structure of the switch, and can be used for occasions with higher voltage grade through simple cascade connection. The device has the characteristics of flexible and light use and easy maintenance, and is particularly suitable for power enterprises to develop high-voltage oscillatory wave test tests of the insulation state of the distribution cable.
Description
Technical field
The present invention relates to partial discharge monitoring technology and the application thereof of power equipment, relate to a kind of device being specifically applied to power cable weakly damped oscillation ripple test macro, particularly a kind of high-voltage oscillation wave producer modular electronic switch.
Background technology
The preventive trial of ac power cable is the important content ensureing electrical network reliability service.If carry out traditional power frequency withstand test, the volume and weight of its transformer will become very large, be difficult to meet on-the-spot test demand.In recent years, the dfamped alternating current voltage tester technology of a kind of advanced person because of itself and AC voltage withstand test equivalence good, and volume is little, simple to operate, obtains the close attention of domestic and international electric power enterprise.Current domestic existing a lot of cable runs, test unit utilizes and carried out practical application based on the high-voltage oscillation ripple test macro of this technology to distribution network cable, on-the-spotly finds and all kinds of defect in anatomy verification cable, achieves good effect.
The part that high-voltage oscillation ripple test macro is most crucial---what high voltage switching module was traditional is use air gap to obtain enough withstand voltage and through-current capabilities, but it is large that air gap has discharge dispersity, electric discharge is wayward for opportunity, life-span is short, noise is large, there is the shortcomings such as air pollution, now gradually substitute by semiconductor switch.But, also there is some technical problems in practical application to wait to solve, such as: 1) traditional semiconductor device such as thyristor, MOSFET etc. have respective weak point, responsiveness as thyristor is excessively slow, the high-voltage resistance capability of MOSFET is poor, and traditional IGBT module cost is high, volume is large, and the device stronger in the urgent need to combination property builds switch module; 2) semiconductor manufacturing industry technological level traditionally, is difficult to only use single device just to meet tens needed for high-voltage test even the electric pressure requirement of hundreds of kilovolt, so it is unavoidable that the series connection of multiple semiconductor power device uses.And series connection uses multiple device to need the voltage solved between each device to divide equally problem and synchronous Trigger Problems; 3) voltage between multiple semiconductor power device often differs more than thousands of volt, so will high-voltage isolating be considered between its respective supply module, and traditional isolating transformer structure makes switching system bulky, heaviness is not easily transported, so need a set of more succinctly light, and the multiple-channel output isolation electric power system of high-voltage isolating requirement can be met; 4) single high-voltage switch gear can only be applicable to the experimental enviroment under a kind of electric pressure, so need to consider high voltage switching module problem, makes the cascade by means of only several module can realize the lifting of electric pressure.
Therefore, how to design a set of modular electronic switch, make it while meeting high voltage, big current requirement, have use safety and feature that is portable, that can to expand etc., the real important topic belonged in current power equipment research design field.
Summary of the invention
The invention provides a kind of high-voltage oscillation wave producer modular electronic switch, solve existing wave of oscillation test macro high-voltage switch gear power density little, life-span is short, responsiveness is slow, and the technical difficulty that switching loss is large, improves the technical merit of association area, optimize traditional structure and the layout of wave of oscillation test macro, there is structure simple, be easily expanded into various electric pressure, the features such as profile is light.
The technical solution adopted in the present invention is as follows:
A kind of high-voltage oscillation wave producer modular electronic switch, the power supply unit comprising multiple switch element, power for multiple switch element, and control the control unit that multiple switch element cut-offs state, described multiple switch element is connected in series with each other, the earth terminal of switch element is connected with the earth terminal of high-voltage oscillation wave producer, and the high-pressure side of switch element is connected with the high direct voltage end of high-voltage oscillation wave producer; Each switch element described includes the chip of control IGBT and is connected to the fiber optic receiver of chip triggering signal input; Described control unit comprises power supply, trigger switch, is connected to the current amplification unit of trigger switch output, and fiber optic emitter group, fiber optic emitter group is connected with the fiber optic receiver of switch element by optical fiber, and whether described control unit is triggered by trigger switch and the cut-offfing of control switch unit.
As the preferred embodiments of the present invention, the isolation that described power supply unit adopts inverse-excitation type PFC power supply topologies to realize multichannel IGBT is powered, mainly comprise the coupling transformer, the rectifier bridge that connect successively, and pfc converter, described power supply unit includes semiconductor switch, magnetic core, rectifier diode, filter capacitor further, and the first siding ring be wrapped on magnetic core and second siding ring group; Wherein, the output of described pfc converter connects the grid G of semiconductor switch, described rectifier diode and filter capacitor are connected to the two ends of second siding ring after connecting, the two ends of first siding ring are connected with an other output of pfc converter with the source S of semiconductor switch respectively, the drain D ground connection of described semiconductor switch.
As the preferred embodiments of the present invention, described coupling transformer is step-down transformer, adopts the toroidal transformer of 220VAC input, 36VAC output; Form rectification and power factor correction unit after described rectifier bridge and pfc converter series connection, this rectification and power factor correction unit adopt the rectifier bridge and the power factor correction chip UC3845 cascade that are not less than 15A through-current capability.
As the preferred embodiments of the present invention, described first siding ring is not more than two circles, second siding ring group only a circle to prevent magnetic core saturated; Semiconductor switch is the low open resistance MOSFET of withstand voltage more than 100V, more than through-current capability 20A.
As the preferred embodiments of the present invention, described magnetic core relative permeability is not less than 2000, saturation induction density is not less than 0.5T, residual magnetic flux density is not more than 0.2T; Described rectifier diode is the fast recovery diode that through-current capability is not less than 3A; The capacitance of filter capacitor is not less than 4700uF; Switch element topological structure is identical, and after series connection, converge like the spokes of a wheel at the hub shape is combined into disk printed circuit board, is connected one by one in disc centre with power supply unit.
As the preferred embodiments of the present invention, described each switch element comprises regulating circuit, drive circuit, IGBT semiconductor device further, and equalizer circuit; Wherein, drive circuit comprises chip, power amplification unit and short-circuit protection unit, and regulating circuit is connected with power supply unit, and the output of described regulating circuit is connected with the input of chip, and the output of chip is connected with power amplification unit; The output of described power amplification unit has two; wherein one is connected to the g end of IGBT by gate electrode resistance; the other e being connected directly between IGBT of power amplification unit holds; in addition; the voltage-stabiliser tube of anti-series is connected with between gate electrode resistance and the e end of IGBT; other one end of described short-circuit protection unit is connected to the c end of IGBT, finally, between the c end and e end of IGBT, is connected with equalizer circuit further.
As the preferred embodiments of the present invention, described regulating circuit regulates and makes the input voltage of drive circuit be not more than 12V; The speed of opening of described drive circuit is less than 500ns, exports peak current and is greater than 3A; Described IGBT semiconductor device meets and is withstand voltagely not less than 2.52.5kV, and through-current capability is not less than 50A.
As the preferred embodiments of the present invention, the power supply of described control unit adopts the Switching Power Supply of 5V, and trigger switch adopts stirs mechanical switch series connection Anti-shaking circuit.
As the preferred embodiments of the present invention, the converge like the spokes of a wheel at the hub shape permutation and combination of described switch element forms disc printed circuit board, wherein, between first place and the switch element at end, offers fan-shaped mouth, to ensure therebetween High-Voltage Insulation distance fully.
As the preferred embodiments of the present invention, connected by the silicon rubber insulation line of withstand voltage 50kVDC between described switch element; Described control unit to be integrated on control circuit board and to be connected with switch element by optical fiber.
Compared with prior art, high-voltage oscillation wave producer modular electronic switch of the present invention at least has following beneficial effect: multiple switch element is connected in series by the present invention, increase the suitable power of high-voltage switch gear, withstand voltagely reach 20kV, through-current capability reaches 50A, particularly voltage doubles be can realize by the form of multiple cascade of the present invention, applicability and the expansibility of this electronic switch improve; In addition, the present invention does not use isolating transformer to achieve the voltage isolation of between switch element and power supply unit and power supply unit tens kilovolts, and the structure of equipment is more reasonable.
Accompanying drawing explanation
Above-mentioned is only the general introduction of technical solution of the present invention, and in order to better understand technological means of the present invention, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the composition schematic diagram of a kind of high-voltage oscillation wave producer of the present invention modular electronic switch.
Fig. 2 is the basic structure schematic diagram of the power supply unit of a kind of high-voltage oscillation wave producer of the present invention modular electronic switch.
Fig. 3 is the circuit diagram of a switch element of a kind of high-voltage oscillation wave producer of the present invention modular electronic switch.
Fig. 4 is the circuit diagram of the control unit of a kind of high-voltage oscillation wave producer of the present invention modular electronic switch.
Fig. 5 is the overall appearance structural representation of a kind of high-voltage oscillation wave producer of the present invention modular electronic switch.
Embodiment
Refer to shown in Fig. 1 and Fig. 5, on circuit structure, the present invention primarily of power supply unit 11, switch element 12,13 ... 111, control unit 112 forms.Described power supply unit 11 is connected with switch element respectively with control unit 112.
Please consult especially shown in Fig. 3, described switch element 12 ~ 111 topological structure is identical, and each switch element comprises regulating circuit 31, drive circuit 32, the IGBT semiconductor device 33 of BIMOSFET technique, equalizer circuit 34, fiber optic receiver 35 respectively.Wherein, drive circuit 32 comprises chip, power amplification unit and short-circuit protection unit; Regulating circuit is connected with the power supply output of power supply unit 11, the described output of regulating circuit 31 is connected with the input of chip, the output of chip is connected with power amplification unit, fiber optic receiver 35 is connected to the triggering signal input of chip, and short-circuit protection unit is connected to the Enable Pin of chip; The output of described power amplification unit has two; wherein one is connected to the g end of IGBT33 by gate electrode resistance; the other e being connected directly between IGBT33 of power amplification unit holds; in addition; the voltage-stabiliser tube of anti-series is connected with between gate electrode resistance and the e end of IGBT33; other one end of described short-circuit protection unit is connected to the c end of IGBT33, finally, between the c end and e end of IGBT33, is connected with equalizer circuit 34 further.Switch element 12 ~ 111 is connected mutually, the ground termination the earth of switch element 12, the high-voltage output end of the high pressure termination wave of oscillation test macro of switch element 111; Fiber optic receiver 35 receives the light signal of triggering and is converted into signal of telecommunication control IGBT action; The voltage that equalizer circuit realizes between each switch element is divided equally.
Described regulating circuit 31 regulates and makes the input voltage of drive circuit be not more than 12V, present invention uses linear voltage stabilization chip 7812, then to be powered by single channel+12V by chip QQ04 and be converted into+15V ,-8V and supply power with double circuit.Drive circuit 32 reliably drives IGBT for ensureing, should meet the speed of opening is less than 500ns, and export peak current and be greater than 3A, preferably, the present invention uses the external power amplifier TIP41C of TD350 chip to drive.IGBT semiconductor device 33 will have enough power grades, should meet withstand voltagely to be not less than 2.5kV, and through-current capability is not less than 50A, and preferably, the present invention uses the IXB86N300 chip of BIMOSFET technique, withstand voltage 3kV, through-current capability 86A.Equalizer circuit 34 uses 5M Ω high voltage non-inductance resistor.Fiber optic receiver 35 is the HFBR2522 of AVAGO company.
Please consult especially shown in Fig. 2, described power supply unit 11 adopts inverse-excitation type PFC power supply topologies, the isolation realizing ten road IGBT unit is powered, mainly comprise coupling transformer 21, rectifier bridge, pfc converter (i.e. power factor correcting converter), MOSFET semiconductor switch 214, magnetic core 215, rectifier diode 216 ~ 225, filter capacitor 226 ~ 235, and the first siding ring 23 be wrapped on magnetic core 215 and second siding ring group 24-213.Wherein, the input of coupling transformer 21 is civil power, the output of coupling transformer 21 connects the input of described rectifier bridge, the output of described rectifier bridge connects the input of pfc converter, the output of described pfc converter connects the grid G of MOSFET semiconductor switch, described rectifier diode 216-226 and filter capacitor 226-235 is connected to the two ends of second siding ring after connecting, second siding ring is a circle, first siding ring is two circles, the two ends of two circle first siding rings are connected with an other output of pfc converter with the source S of MOSFET semiconductor switch respectively, the drain D ground connection of described MOSFET semiconductor switch.Described rectifier diode and the rear power supply output forming whole power supply unit of filter capacitor series connection, when pfc converter control MOSFET semiconductor switch conducts, the first siding ring of magnetic core 215 starts energy storage, now, is powered by coupling transformer 21 pairs of switch elements; When pfc converter control MOSFET semiconductor switch turns off, the first siding ring of magnetic core 215 releases energy second siding ring, to power to switch element.
Described coupling transformer 21 is step-down transformer, adopts 220VAC input, 36VAC output.Form rectification and power factor correction unit 22 after rectifier bridge and pfc converter series connection, this rectification and power factor correction unit 22 adopt the rectifier bridge and the power factor correction chip UC3845 cascade that are not less than 15A through-current capability.First siding ring 23 is not more than two circles, second siding ring group 24 ~ 213 only a circle to prevent magnetic core 215 saturated.MOSFET semiconductor switch 214 should use the low open resistance MOSFET of withstand voltage more than 100V, more than through-current capability 20A, and preferably, the MOSFET model that the present invention adopts is IRFP260.Magnetic core 215 must meet that relative permeability is not less than 2000, saturation induction density is not less than 0.5T, residual magnetic flux density is not more than 0.2T, preferably, the magnetic core that the present invention uses is external diameter 102mm, internal diameter 85mm, the FERRITE CORE of height 2mm, initial relative permeability is 2500, and saturation induction density is 0.54T, and residual magnetic flux density is 0.2T.Rectifier diode 216 ~ 225 should use through-current capability to be not less than the fast recovery diode of 3A, preferably, and the diode that the present invention uses model to be BYV36C.Filter capacitor 226 ~ 235 capacitance is not less than 4700uF, and preferably, the present invention uses capacitance 6800uF, the alminium electrolytic condenser of withstand voltage 50V.
Described control unit 112 forms primarily of power supply 41, trigger switch 42, current amplification unit 43, fiber optic emitter group 44 ~ 53.Wherein, described fiber optic emitter group is connected with the fiber optic receiver 35 of corresponding switch element respectively by optical fiber.Whether described control unit 112 is triggered and the off state of control switch unit by trigger switch 42.
Described power supply 41 adopts the Switching Power Supply of 5V, and trigger switch 42 adopts stirs mechanical switch series connection Anti-shaking circuit, and current amplification unit 43 adopts NPN triode FJD3076, and fiber optic emitter group 44 ~ 53 adopts the HFBR1522 of AVAGO company.Described fiber lengths is 2m.
Concrete in appearance, the present invention is primarily of one piece of disc printed circuit board, 51, one piece of power supply board circuit board, 52, one piece of control circuit board 53, and optical fiber 54 ~ 513 is formed.
Described disc printed circuit board 51 primarily of switch element 12,13 ... 111 converge like the spokes of a wheel at the hub shapes are arranged in a combination.On disc printed circuit board 51, switch element 12,13 ..., connected by the silicon rubber insulation line of withstand voltage 50kVDC between 111, connected mode is that bolt is fixed.Meanwhile, disc printed circuit board 51 also does following integrated:
1) center is integrated with magnetic core 215; 2) switch element 12 ~ 111 front end is integrated with rectifier diode 216 ~ 225 respectively, electric capacity 226 ~ 235, second siding ring group 24 ~ 213, is connected by bolt between each second siding ring with respective switch unit, is connected between switch element with control circuit board 53 by optical fiber; 3) disc centre perforation, walks around magnetic core 215 for first siding ring 23; 4) disk opens fan-shaped mouth between switch element 12 and switch element 111, to ensure therebetween High-Voltage Insulation distance fully.
Described power supply unit 11 is by being around in first siding ring 23 on magnetic core 215 and disc printed circuit board 51 is coupled, for it provides energy.
Described power supply circuits plate 52 is integrated with in power supply unit 11 except all elements on disk except integrated device.
Described control circuit board 53 is integrated with all elements in control unit 112.
The present invention is the high-voltage switch gear part as high-voltage oscillation wave producer, after alternating wave generator applies high voltage, produce underdamping LC resonance oscillations ripple by the fast conducting of modular electronic switch provided by the invention.Embodiment is divided into a modular electronic switch to produce the 20kV grade wave of oscillation and expansion is two modular electronic switching stage coproduction raw 40kV grade wave of oscillation two kinds.Below two kinds of embodiments are illustrated respectively:
1) single modular electronic switch produces the 20kV grade wave of oscillation.The low-pressure end of switch element 12 is connected with the low-pressure end of high-voltage oscillation wave producer, and the high-pressure side of switch element 111 is connected with the high direct voltage end of high-voltage oscillation wave producer.Concrete process is, after power supply unit 11 is energized, in the high-voltage oscillation wave producer linear pressure period, control unit 112 control switch unit 12 ~ 111 is in off state; After having pressurizeed, the trigger switch conducting of control unit 112, control switch unit 12 ~ 111 conducting simultaneously is also maintained at conducting state, and conducting speed is 500ns.After high-voltage switch gear conducting, the internal resistance R of test product C and inductance L and inductance L forms LCR damped harmonic oscillation loop, and test product C produces the underdamping LC series resonant tank ripple of the highest 20kV.
2) two modular electronic switching stage coproduction raw 40kV grade waves of oscillation.In the present invention a two disc printed circuit Slab element 51 is stacked rear series connection to use, first siding ring 23 passes from two circle disk centers, expands out 10 road optical fiber control signals again and access another disc printed circuit board in control circuit board 53.During concrete access high-voltage oscillation wave producer, the high-pressure side of the switch element 111 of top disk is connected on the high-pressure side of high-voltage oscillation wave producer, by the low-pressure end of the low-pressure end of the switch element 12 of below disk access high-voltage oscillation wave producer, according to 1) in same execution mode, the wave of oscillation of 40kV grade can be produced.
After adopting above design, the present invention at least tool has the following advantages:
1, the present invention uses the igbt chip of novel BIMOSFET technique to instead of traditional IGBT module, reduces device volume, improve the responsiveness of switch, reduce cost when withstand voltage grade is constant;
2, the present invention has carried out voltage to tandem tap unit and has divided equally, thus makes the voltage's distribiuting of each switch element more even; Use the action of optical fiber control module electronic switch of equal length, achieve the synchronous triggering between each switch element, avoid electronic switch in course of action because switching speed differs generation fault, improve the reliability of equipment; Meanwhile, optical fiber triggering mode achieves the high-voltage isolating of control module, and operator's personal safety is better ensured;
3, present invention employs a kind of novel supply power mode, improve output power, the series connection of more multistage switch element is achieved, increase the suitable power grade of high-voltage switch gear, final withstand voltagely reach 20kV, through-current capability reaches 50A; Particularly voltage doubles be can realize by the form of multiple cascade of the present invention, applicability and the expansibility of this electronic switch improve;
4, the present invention do not use that isolating transformer just achieves between switch element and power supply unit, power supply unit mutually between the voltage isolation of tens kilovolts, the structure of equipment is more reasonable, greatly reduce the volume and weight of modular electronic switch, be convenient to transport and carry.
5, IGBT switch element row is coiled into disc type cascaded structure by the present invention, and the voltage achieved between multiple IGBT switch element is divided equally and synchronous conducting, solves conventional high-tension breaker acting speed fast not, the problem that power grade is not high enough.Described multiple-channel output isolation electric power-feeding structure, achieving multichannel isolation power supply, improve the integrated level of switch, optimizing the structure of switch when not reducing power grade and responsiveness, also by simple cascade, for the occasion of more voltage levels.There is use flexible, light, be easy to the feature of inspection and maintenance, be specially adapted to electric power enterprise and carry out in the high-voltage oscillation ripple testing experiment of distribution cable state of insulation.
The above; it is only preferred embodiment of the present invention; not do any pro forma restriction to the present invention, those skilled in the art utilize the technology contents of above-mentioned announcement to make a little simple modification, equivalent variations or modification, all drop in protection scope of the present invention.
Claims (9)
1. a high-voltage oscillation wave producer modular electronic switch, it is characterized in that: the power supply unit (11) comprising multiple switch element (12-111), power for multiple switch element (12-111), and control the control unit (112) that multiple switch element (12-111) cut-offs state, described multiple switch element is connected in series with each other, the earth terminal of switch element is connected with the earth terminal of high-voltage oscillation wave producer, and the high-pressure side of switch element is connected with the high direct voltage end of high-voltage oscillation wave producer; Each switch element described includes the chip of control IGBT and is connected to the fiber optic receiver (35) of chip triggering signal input; Described control unit comprises power supply (41), trigger switch (42), is connected to the current amplification unit (43) of trigger switch output, and fiber optic emitter group (44-53), fiber optic emitter group is connected with the fiber optic receiver of switch element by optical fiber, and whether described control unit (112) is triggered by trigger switch (42) and the cut-offfing of control switch unit; The isolation that described power supply unit (11) adopts inverse-excitation type PFC power supply topologies to realize multichannel IGBT is powered, mainly comprise the coupling transformer (21), the rectifier bridge that connect successively, and pfc converter, described power supply unit (11) includes semiconductor switch (214), magnetic core (215), rectifier diode (216 ~ 225), filter capacitor (226 ~ 235) further, and the first siding ring (23) be wrapped on magnetic core (215) and second siding ring group (24-213); Wherein, the output of described pfc converter connects the grid G of semiconductor switch, described rectifier diode (216-225) and filter capacitor (226-235) are connected to the two ends of second siding ring after connecting, the two ends of first siding ring are connected with an other output of pfc converter with the drain D of semiconductor switch respectively, the source S ground connection of described semiconductor switch.
2. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 1, is characterized in that: described transformer (21) is step-down transformer, adopts the toroidal transformer of 220VAC input, 36VAC output; Form rectification and power factor correction unit (22) after described rectifier bridge and pfc converter series connection, this rectification and power factor correction unit (22) adopt the rectifier bridge and the power factor correction chip UC3845 cascade that are not less than 15A through-current capability.
3. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 1, it is characterized in that: described first siding ring (23) is not more than two circles, second siding ring group (24 ~ 213) only a circle to prevent magnetic core (215) saturated; Semiconductor switch (214) is withstand voltage more than 100V, the low open resistance MOSFET of more than through-current capability 20A.
4. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 1, is characterized in that: described magnetic core (215) relative permeability is not less than 2000, saturation induction density is not less than 0.5T, residual magnetic flux density is not more than 0.2T; Described rectifier diode (216 ~ 225) is not less than the fast recovery diode of 3A for through-current capability; The capacitance of filter capacitor (226 ~ 235) is not less than 4700uF; Switch element (12 ~ 111) topological structure is identical, and after series connection, converge like the spokes of a wheel at the hub shape is combined into disk printed circuit board, is connected one by one in disc centre with power supply unit (11).
5. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 1, it is characterized in that: described each switch element comprises regulating circuit (31), drive circuit (32), IGBT semiconductor device (33) further, and equalizer circuit (34); Wherein, drive circuit (32) comprises chip, power amplification unit and short-circuit protection unit, regulating circuit is connected with power supply unit (11), the output of described regulating circuit (31) is connected with the input of chip, and the output of chip is connected with power amplification unit; The output of described power amplification unit has two; wherein one is connected to the g end of IGBT (33) by gate electrode resistance; the other e being connected directly between IGBT (33) of power amplification unit holds; in addition; the voltage-stabiliser tube of anti-series is connected with between gate electrode resistance and the e end of IGBT (33); other one end of described short-circuit protection unit is connected to the c end of IGBT (33); finally, between the c end and e end of IGBT (33), equalizer circuit (34) is connected with further.
6. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 5, is characterized in that: described regulating circuit (31) regulates and makes the input voltage of drive circuit be not more than 12V; The speed of opening of described drive circuit is less than 500ns, exports peak current and is greater than 3A; Described IGBT semiconductor device meets and is withstand voltagely not less than 2.5kV, and through-current capability is not less than 50A.
7. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 1, it is characterized in that: the power supply (41) of described control unit adopts the Switching Power Supply of 5V, trigger switch (42) adopts stirs mechanical switch series connection Anti-shaking circuit.
8. a kind of high-voltage oscillation wave producer modular electronic switch as claimed in any of claims 1 to 7, it is characterized in that: the converge like the spokes of a wheel at the hub shape permutation and combination of described switch element (12-111) forms disc printed circuit board (51), wherein, fan-shaped mouth is offered, to ensure therebetween High-Voltage Insulation distance fully between first place and the switch element at end.
9. a kind of high-voltage oscillation wave producer modular electronic switch according to claim 8, be is characterized in that: connected by the silicon rubber insulation line of withstand voltage 50kVDC between described switch element; Described control unit to be integrated on control circuit board and to be connected with switch element by optical fiber.
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