CN103593077B - Touch-control sensing unit and the panel with this touch-control sensing unit - Google Patents
Touch-control sensing unit and the panel with this touch-control sensing unit Download PDFInfo
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- CN103593077B CN103593077B CN201210288190.2A CN201210288190A CN103593077B CN 103593077 B CN103593077 B CN 103593077B CN 201210288190 A CN201210288190 A CN 201210288190A CN 103593077 B CN103593077 B CN 103593077B
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Abstract
The invention provides a kind of touch-control sensing unit and the panel with this touch-control sensing unit, this kind of touch sensing device comprises an induction electrode, a switch element and a boosting and discharge cell.Induction electrode is used for the touching of sensing one exterior object.Switch element connects to this induction electrode, to produce an induced voltage.Boosting and discharge cell connect to this induction electrode and this switch element, to discharge to this induction electrode, or lift this induction electrode voltage.
Description
Technical field
The present invention is the technical field with regard to contact panel, espespecially a kind of touch-control sensing unit and have this touch-control sensing list
The panel of unit.
Background technology
Fig. 1 is the circuit diagram of an existing touch sensing device 100.Existing touch sensing device 100 is by a preliminary filling crystal
Pipe (pre-charge transistor) 110, one induction electrode (detection electrode) 120, one amplifying transistor
(amplifier transistor) 130, one reads transistor (read transistor) 140, one coupled capacitor
(coupling capacitor) 150, one pre-charge line (pre-charge line) 160, one coupled pulse line (coupling
Pulse line) 170 and one read line (read line) 180 formed.
This touch sensing device 100 utilizes finger to contact a glass surface or this touch sensing device 100 close, can exist
A finger electric capacity Cf is produced, this finger electric capacity Cf is not the electric capacity of an entity, its table between finger and this induction electrode 120
Show the inductance capacitance between finger and this induction electrode 120.
Fig. 2 is V diagram during this existing touch sensing device 100 sensing.Wherein, n0 represents coupled pulse line 170
On voltage, n1 represents the voltage on induction electrode 120.Before being sensed, preliminary filling transistor 110 is opened, and pre-charge line 160 can
Via preliminary filling transistor 110, the voltage of induction electrode 120 is set to a pre-charge pressure Vpre.Or preliminary filling transistor 110
Open, to allow induction electrode 120 to discharge.
When being sensed, preliminary filling transistor 110 and amplifying transistor 130 are turned off, meanwhile, in coupled pulse line 170
Upper generation one amplitude is the pulse of Va.Because preliminary filling transistor 110 and amplifying transistor 130 are turned off and coupled capacitor 150
Coupling effect, induction electrode 120 also can produce the pulse that an amplitude is Va.Contact a glass surface or lean on when there is no finger
During this touch sensing device 100 nearly, the voltage on induction electrode 120 is close with the voltage on coupled pulse line 170.Now sense
Voltage Va on electrode 120 is (Vgh-Vgl) × { (Cc+Cs2) ÷ (Cc+Cs1+Cs2) }+Vpre, central, and Vgh is pulse
High level, Vgl is the low level of pulse, and Vpre is the level of pre-charge pressure, and Cc is the capacitance of coupled capacitor 150, and Cf is handss
Refer to the capacitance of electric capacity, Cs1 is the capacitance of preliminary filling transistor 110, Cs2 is the capacitance of amplifying transistor 130.
And when finger contacts a glass surface or this this touch sensing device 100 close, can be in finger and this sensing
A finger electric capacity Cf is produced between electrode 120.Due to the relation of finger electric capacity Cf, the voltage on induction electrode 120 can be made to decline.
Now the voltage Va ' on induction electrode 120 is (Vgh-Vgl) × { (Cc+Cs2) ÷ (Cc+Cs1+Cs2+Cf) }+Vpre.
Therefore, do not have finger near with have finger near when voltage difference dVet be：
Fig. 3 is the emulation schematic diagram of voltage during this existing touch sensing device 100 sensing.Capacitance Cf when finger electric capacity
During for 10fF, voltage difference dVdet is about 90mV.The capacitance Cf of therefore finger electric capacity is bigger, then touch sensing device 100 is quick
Sense degree is higher.But in fact, when touch sensing device 100 is integrated into display panels, design is considered crystalline substance
The aobvious resolution vision impression brilliant with panel of aobvious aperture opening ratio, actually feasible induction electrode 120 cannot be very big, that is, finger
The capacitance Cf of electric capacity is approximately less than or is equal to 1fF, and the Cgds capacitance of usual preliminary filling transistor 110 or amplifying transistor 130
It is about tens of fF, therefore touch sensing device 100 has the not enough shortcoming of sensitivity.Therefore, the skill of existing touch-control sensing unit
Art still has the space of improvement.
Content of the invention
Present invention is primarily targeted at providing a kind of touch-control sensing unit and the panel with this touch-control sensing unit, with
Effectively improve the accuracy of detected position of touch.
Another object of the present invention is to providing a kind of touch-control sensing unit and the panel with this touch-control sensing unit, tool
Have better simply hardware structure, when the touch-control sensing unit of the present invention is integrated in LCD, have higher aperture radio with excellent
The advantage of yield.
According to a characteristic of the present invention, the present invention proposes a kind of touch sensing device, and it comprises an induction electrode, a switch
Element and a boosting and discharge cell (boosting/discharging unit).This induction electrode is used for the outside thing of sensing one
The touching of body.This switch element connects to this induction electrode, to produce an induced voltage.This boosting and discharge cell connect to this
Induction electrode and this switch element, to discharge to this induction electrode, or lift this induction electrode voltage.
According to another characteristic of the present invention, the present invention proposes a kind of display floater with touch sensing device, and it includes
Multiple display scan lines, multiple touch sensing scan line, multiple data wire, multiple pixel electrode, multiple thin film transistor (TFT) and many
Individual touch sensing device.The plurality of display scan line is according to a first direction setting.The plurality of touch sensing scan line foundation should
First direction is arranged.Its foundation one second direction setting of the plurality of data wire.Each film crystal of the plurality of thin film transistor (TFT)
The grid of pipe connects to a display scan line corresponding in the plurality of display scan line, and source electrode connects to right in the plurality of data wire
The data wire answered, drain electrode connects to a corresponding pixel electrode in the plurality of pixel electrode.The plurality of touch sensing device
One end of each touch sensing device connects to a touch sensing scan line corresponding in the plurality of touch sensing scan line, another
End connects to a corresponding data wire in the plurality of data wire.
Brief description
Fig. 1 is the circuit diagram of an existing touch sensing device.
Fig. 2 is V diagram during this existing touch sensing device sensing.
Fig. 3 is the emulation schematic diagram of voltage during this existing touch sensing device sensing.
Fig. 4 is a kind of schematic diagram of touch-control sensing unit of the present invention.
Fig. 5 is the circuit diagram of an embodiment of touch-control sensing unit of the present invention.
Fig. 6 and Fig. 7 is the equivalent circuit diagram of Fig. 5 of the present invention.
Fig. 8 senses the schematic diagram of control signal for the present invention.
The emulation schematic diagram of voltage when Fig. 9 senses for touch-control sensing unit of the present invention.
Figure 10 is the circuit diagram of another embodiment of touch-control sensing unit of the present invention.
Figure 11 is the circuit diagram of the another embodiment of touch-control sensing unit of the present invention.
The schematic diagram of the voltage that Figure 12 measures for prior art.
The schematic diagram of the voltage that Figure 13 measures for the present invention.
Figure 14 is the schematic diagram of the voltage of another measurement of the present invention.
Figure 15 is a kind of schematic diagram of the display floater with touch sensing device of the present invention.
【Main element symbol explanation】
Touch sensing device 100；
Preliminary filling transistor 110；Induction electrode 120；
Amplifying transistor 130；Read transistor 140；
Coupled capacitor 150；Pre-charge line 160；
Coupled pulse line 170；Read line 180；
Finger electric capacity Cf；Node n0, n1；
Touch-control sensing unit 400；
Induction electrode 410；Switch element 420
Boosting and discharge cell 430；Sensing control signal source 440
Diode current flow 431；Electric capacity 432；
3rd MOS transistor 433；Electric capacity 434；
There is the display floater 1500 of touch sensing device；
Multiple display scan lines 1510；Multiple touch sensing scan lines 1520；
Multiple data wires 1530；Multiple pixel electrodes 1540；
Multiple touch sensing devices 400；
Specific embodiment
Fig. 4 is a kind of schematic diagram of touch-control sensing unit of the present invention 400, and this touch-control sensing unit 400 includes a sensing
Electrode 410, an a switch element 420, boosting and discharge cell (boosting/discharging unit) 430 and a sensing
Control signal source 440.
This induction electrode 410 is used for the touching of sensing one exterior object.
This switch element 420 connects to this induction electrode, to produce an induced voltage.This switch element 420 is one first
MOS transistor 420, its grid connects to this induction electrode 410.
This boosting and discharge cell (boosting/discharging unit) 430 connect to this induction electrode 410 and are somebody's turn to do
Switch element 420, to discharge to this induction electrode 410, or lifts this induction electrode 410 voltage.
This sensing control signal source 440 is connected to this switch element 420, to provide an electric discharge reference voltage, or a sense
Survey reference voltage.The voltage level of wherein this electric discharge reference voltage is less than this sensing reference voltage.
Fig. 5 is the circuit diagram of an embodiment of touch-control sensing unit 400 of the present invention.As shown in figure 5, this boosting and electric discharge dress
Putting 430 is one second MOS transistor 430, and connects into diode (diode-connected).This second MOS transistor
430 grid and drain electrode connect to this induction electrode 410, and its source electrode connects to this switch element 420 and receives a sensing control
Signal touch_scan.
Fig. 6 and Fig. 7 is the equivalent circuit diagram of Fig. 5 of the present invention.Fig. 8 senses showing of control signal touch_scan for the present invention
It is intended to.This sensing control signal touch_scan for an electronegative potential or can be a high potential, the wherein voltage of this electronegative potential
Level is less than the voltage level of this high potential.Wherein, when Fig. 6 is an electronegative potential for this sensing control signal, the equivalent circuit of Fig. 5
Figure.When Fig. 7 is a high potential for this sensing control signal, the equivalent circuit diagram of Fig. 5.
As shown in fig. 6, when this sensing control signal touch_scan is an electronegative potential, this second MOS transistor 430 such as two
Turn on as pole pipe, to allow this induction electrode 410 to discharge, this second MOS transistor 430 effect such as a diode.
As shown in fig. 7, when this sensing control signal touch_scan is a high potential, this second MOS transistor 430 closes
Close, and pass through capacitance coupling effect, lift the current potential of this induction electrode 410, the effect of this second MOS transistor 430 is as closed
Diode, electric capacity when providing reverse.
As shown in figure 8, in period T1, this sensing control signal touch_scan is electronegative potential, this sensing control signal
Touch_scan can be considered Reset Status.So that node n1 current potential is refitted in a current potential Vgl+Vt (diode), wherein Vgl is
The low level of this sensing control signal touch_scan, this second MOS transistor 430 as diode, the therefore the 2nd MOS
The threshold voltage (the threshold voltage) of transistor 430 is then represented with Vt (diode).
In period T2, this sensing control signal touch_scan is high potential, this sensing control signal touch_scan
Can be considered a sensing state.This sensing control signal touch_scan turns high level Vgh by low level Vgl.The correlation of node n1
Electric capacity has electric capacity Cgd1 between the grid of this second MOS transistor 430 and drain electrode, the grid of the first MOS transistor 420 and drain electrode
Between electric capacity Cgd2 and finger finger electric capacity Cf of producing when contacting glass surface.The voltage of therefore node n1 is represented by：
(Vgh-Vgl)×[(Cgd1+Cgd2)/(Cgd1+Cgd2+Cf)]+Vgl+Vt(diode).
When not having finger contact, finger electric capacity Cf is 0, and therefore now the voltage of node n1 is represented by Vgh+Vt
(diode).
When therefore having or not finger contact, node n1 voltage difference is represented by：
(Vgh-Vgl)×[Cf/(Cgd1+Cgd2+Cf)] (2)
By formula (2) it is known that in actual design the present invention can by adjust Cf and Cgd1+Cgd2 ratio obtain
The voltage difference wanted.Further, before and after by measuring finger contact, the current difference that the first MOS transistor 420 flows through,
Can judge whether to have or not finger contact by system end.In addition compare formula (1) to understand with formula (2), in available circuit, voltage
Differing from dVet is：
DVet=Δ V × { Cf × (Cc+cs2) ÷ [(Cc+Cs1+Cs2+Cf) × (Cc+Cs1+Cs2)] },
Wherein Δ V=(Vgh-Vgl).And in the present invention, voltage difference dVet is：
DVet=Δ V × [Cf/ (Cgd1+Cgd2+Cf)].
In practice, finger electric capacity Cf is about 1fF, and the electric capacity between the grid of MOS transistor 420,430 and drain electrode
Cgd1, Cgd2 are more than finger electric capacity Cf an order of magnitude, about tens of fF.Therefore compare formula (1) permissible with formula (2)
Solution, in available circuit, the impact of the electric capacity Cgd between the grid of transistor and drain electrode is bigger than the present invention, therefore available circuit pair
Sensitivity in finger electric capacity Cf can be poorer than present invention circuit.
Using identical simulated conditions Vgh=10V, Vgl=-5V, Cgd1=0.02pF, Cgd2=0.02pF, transistor
Under conditions of width to length ratio (W/L) is 20/10, it is simulated using Spice.Fig. 9 feels for touch-control sensing unit 400 of the present invention
The emulation schematic diagram of voltage during survey.Relatively Fig. 3 and Fig. 9 understands, available circuit need to need to be just to have during 10fF to finger electric capacity Cf
The change in voltage of 90mV, and the present invention when finger electric capacity Cf is 1fF, that is, has the change in voltage of 900mV.The namely present invention
Circuit has more preferable sensitivity than prior art, more can carry out touch detection exactly.
Figure 10 is the circuit diagram of another embodiment of touch-control sensing unit 400 of the present invention.Wherein, this boosting and discharge cell
430 is a diode 431, and the anode tap (anode) of this diode 431 connects to this induction electrode 410, its cathode terminal
(cathode) connect to this switch element 420 and receive sensing control signal touch_scan.This sensing control signal
Touch_scan for an electronegative potential or can be a high potential, and the wherein voltage level of this electronegative potential is less than the electricity of this high potential
Voltage level.
When this sensing control signal touch_scan is an electronegative potential, this diode current flow 431, to allow this induction electrode
410 electric discharges.When this sensing control signal touch_scan is a high potential, this diode 431 is closed, and passes through Capacitance Coupled
Effect, to lift the current potential of this induction electrode 410.Vague and general (or junction) electricity when this electric capacity can be considered that this diode 431 is closed
Hold (Depletion or Junction Capacitance).
This boosting and discharge cell 430 also comprise two ends and are connected to the anode tap of diode 431 and the electric capacity of cathode terminal
432, during allowing this diode 431 to close, the capacitance between this induction electrode 410 and this sensing control signal touch_scan
Increase.Its action principle is identical with Fig. 5, repeats no more.
Figure 11 is the circuit diagram of the another embodiment of touch-control sensing unit 400 of the present invention.This boosting and discharge cell 430 are
It is made up of one the 3rd MOS transistor 433 and an electric capacity 434, the 3rd MOS transistor 433 and this electric capacity 434 connect to this sense
Answer electrode 410 and this switch element 420.Wherein, this switch element 420 is the first MOS transistor 420, the 3rd MOS transistor
433 grid receives a reset signal (B), and its drain electrode connects to this induction electrode 410, and its source electrode connects to this switch element
420, one end of this electric capacity 434 connects to this induction electrode 410, and its other end connects to this switch element 420 and receives a sense
Survey control signal touch_scan.This sensing control signal touch_scan for an electronegative potential or can be a high potential, its
In this electronegative potential voltage level be less than this high potential voltage level.
When this sensing control signal touch_scan, for an electronegative potential and this reset signal B enables the 3rd MOS transistor
When 433, the 3rd MOS transistor 433 turns on, with allow this induction electrode 410 via the 3rd MOS transistor 433 and this first
MOS transistor 420 discharges.When this sensing control signal touch_scan is high potential and this reset signal B forbidden energy the 3rd MOS
During transistor 433, the 3rd MOS transistor 433 is closed, and this sensing control signal touch_scan, via this electric capacity 434, is lifted
The current potential of this induction electrode 410.Its action principle is identical with Fig. 5, repeats no more.
The schematic diagram of the voltage that Figure 12 measures for prior art, it uses oscillograph its voltage of circuit measuring to Fig. 1, figure
12 left side figures are the voltage not having to be measured when finger is close, the voltage that on the right of Figure 12, figure is measured when being and having finger close.
The schematic diagram of the voltage that Figure 13 measures for the present invention, it uses oscillograph its voltage of circuit measuring to Fig. 5, Figure 13
Left side figure is the voltage not having to be measured when finger is close, the voltage that on the right of Figure 13, figure is measured when being and having finger close.
Figure 14 is the schematic diagram of the voltage of another measurement of the present invention, and it uses oscillograph its electricity of circuit measuring to Figure 10
Pressure, Figure 14 left side figure is the voltage not having to be measured when finger is close, the electricity that on the right of Figure 14, figure is measured when being and having finger close
Pressure.
From Figure 12, Figure 13, Figure 14, the circuit of the present invention have or not finger close when, the voltage difference of node n1 more than
The voltage difference of prior art interior joint n1 is big, that is, whether the technology of the present invention has finger close compared with sensing.
Figure 15 is a kind of schematic diagram of the display floater 1500 with touch sensing device of the present invention, and it includes：Multiple aobvious
Show scan line 1510, multiple touch sensing scan line 1520, multiple data wire 1530, multiple pixel 1540, multiple touch-control sensing
Device 400.
The plurality of display scan line 1510 arranges (X-direction) according to a first direction.The plurality of touch sensing scan line
1520 according to the setting of this first direction.The plurality of data wire 1530 arranges (Y-direction) according to a second direction.Wherein, first party
To this second direction vertical.
Multiple pixels 1540 connect to the plurality of display scan line 1510 and the plurality of data wire 1530.
One end of each touch sensing device of the plurality of touch sensing device 400 connects to the scanning of the plurality of touch sensing
A corresponding touch sensing scan line in line, the other end connects to a data wire corresponding in the plurality of data wire.
The plurality of touch sensing device 400 has an induction electrode 410, an a switch element 420, boosting and discharge cell
(boosting/discharging unit) 430 and a sensing control signal source 440.
This induction electrode 410 is used for the touching of sensing one exterior object.This switch element 420 is one first MOS transistor,
Its grid connects to this induction electrode 410, and its drain electrode connects to this touch sensing corresponding in the plurality of touch sensing scan line
Scan line, its source electrode connects to this data wire corresponding in the plurality of data wire.
This boosting and discharge cell (boosting/discharging unit) 430 connect to this induction electrode 410 and are somebody's turn to do
This touch sensing scan line corresponding in multiple touch sensing scan lines, to discharge to this induction electrode, or lifting should
Induction electrode voltage.This sensing control signal source 440 is connected to this switch element 420, to provide an electric discharge reference voltage, or
One sensing reference voltage.Wherein, the voltage level of this electric discharge reference voltage is less than this sensing reference voltage.
Via designing the induction arrays based on circuit of the present invention (sensor array) in panel, and via sensing
The action of the circuit of array, you can detecting finger position.
From preceding description, the present invention by the use of transistor itself electric capacity Cgd, Cgs as coupled capacitor it is not necessary to
Design coupled capacitor (coupling capacitor) 150 in circuit, and can be by the coupled capacitor (coupling in available circuit
Capacitor) 150, read transistor (read transistor) 140 and be integrated into first MOS transistor 420, will be existing
Preliminary filling transistor (pre-charge transistor) 110, pre-charge line (pre-charge line) 160 and pre-charge line in circuit
(pre-charge line) 160 is integrated into boosting and discharge cell (boosting/discharging unit) 430.Existing electricity
Road framework needs three transistors and a coupled capacitor, and the circuit framework of the present invention only needs to two transistors and without coupling
Close electric capacity, when the touch-control sensing unit 400 of the therefore present invention is integrated in LCD, therefore have higher aperture radio with excellent
The advantage of rate.
Meanwhile, when the capacitance Cf of available circuit finger electric capacity is 10fF, voltage difference only has 90mV, and finger of the present invention is electric
When the capacitance Cf holding is 1fF, voltage difference just has the performance of 900mV, has more preferable sensitivity than available circuit.
From the foregoing, no matter the present invention is with regard to purpose, means and effect, all show its totally different feature in prior art,
Great practical value.Simply it should be noted that above-mentioned many embodiments are illustrated only for the purposes of explanation, the present invention is led
Interest field from being defined described in claim, rather than above-described embodiment should be only limitted to.
Claims (14)
1. a kind of touch sensing device, it comprises：
One induction electrode, for sensing the touching of an exterior object；
One switch element, connects to this induction electrode, and to produce an induced voltage, this switch element is one first MOS transistor,
Its grid connects to this induction electrode；
One boosting and discharge cell, connect to this induction electrode and this switch element, to discharge to this induction electrode, or
Lift this induction electrode voltage；And
One sensing control signal source, is connected to this switch element, to provide an electric discharge reference voltage, or sensing reference electricity
Pressure,
Wherein, the voltage level of this electric discharge reference voltage is less than this sensing reference voltage,
Wherein, this boosting and discharge cell include a diode or the MOS transistor connecting into diode, this boosting
And discharge cell system receives a sensing control signal,
Wherein, this sensing control signal is an electronegative potential or is a high potential, wherein the voltage level of this electronegative potential is less than and is somebody's turn to do
The voltage level of high potential,
Wherein, when this sensing control signal is this electronegative potential, this boosting and discharge cell turn on, to allow this induction electrode to discharge,
Wherein, when this sensing control signal is this high potential, this boosting and discharge cell are closed, and are carried by capacitance coupling effect
Rise the current potential of this induction electrode.
2. touch sensing device according to claim 1, wherein, this boosting and discharge cell are one second MOS transistor,
And connect into diode.
3. touch sensing device according to claim 2, wherein, the grid of this second MOS transistor and drain electrode connect extremely
This induction electrode, its source electrode connects to this switch element and receives this sensing control signal.
4. touch sensing device according to claim 3, wherein, when this sensing control signal is this electronegative potential, this second
MOS transistor turns on, to allow this induction electrode to discharge.
5. touch sensing device according to claim 4, wherein, when this sensing control signal is this high potential, this second
MOS transistor is closed, and lifts the current potential of this induction electrode by capacitance coupling effect.
6. touch sensing device according to claim 1, wherein, this boosting and discharge cell are a diode.
7. touch sensing device according to claim 6, wherein, the anode tap of this diode connects to this induction electrode,
Its cathode terminal connects to this switch element and receives this sensing control signal.
8. touch sensing device according to claim 7, wherein, when this sensing control signal is this electronegative potential, this two pole
Pipe turns on, to allow this induction electrode to discharge.
9. touch sensing device according to claim 8, wherein, when this sensing control signal is this high potential, this two pole
Pipe is closed, and lifts the current potential of this induction electrode by capacitance coupling effect.
10. touch sensing device according to claim 1, wherein, this boosting and discharge cell are by one the 3rd MOS transistor
And one electric capacity formed, the 3rd MOS transistor and this capacitance connection are to this induction electrode and this switch element.
11. touch sensing devices according to claim 10, wherein, the grid of the 3rd MOS transistor receives a replacement
Signal, its drain electrode connects to this induction electrode, and its source electrode connects to this switch element, and one end of this electric capacity connects to this faradism
Pole, its other end connects to this switch element and receives this sensing control signal.
12. touch sensing devices according to claim 11, wherein, this sensing control signal is this electronegative potential and this replacement
When signal enables three MOS transistors, the 3rd MOS transistor conducting, to allow this induction electrode via the 3rd MOS crystal
Pipe and the electric discharge of this first MOS transistor.
13. touch sensing devices according to claim 12, wherein, this sensing control signal is high potential and this replacement letter
During number forbidden energy three MOS transistor, the 3rd MOS transistor is closed, and this sensing control signal lifts this sense via this electric capacity
Answer the current potential of electrode.
A kind of 14. display floaters with touch sensing device, it includes：
Multiple display scan lines, it is according to a first direction setting；
Multiple touch sensing scan lines, it is arranged according to this first direction；
Multiple data wires, it is according to a second direction setting；
Multiple pixels, connect to the plurality of display scan line and the plurality of data wire；And
Multiple touch sensing devices, one end of each touch sensing device connects to corresponding in the plurality of touch sensing scan line
One touch sensing scan line, the other end connects to a data wire corresponding in the plurality of data wire；
Wherein, the plurality of touch sensing device has：
One induction electrode, for sensing the touching of an exterior object；
One switch element, this switch element is one first MOS transistor, and its grid connects to this induction electrode, and its drain electrode connects
This touch sensing scan line corresponding to the plurality of touch sensing scan line, its source electrode connects to the plurality of data wire corresponding
This data wire；
One boosting and discharge cell, connect to this touch sensing corresponding in this induction electrode and the plurality of touch sensing scan line
Scan line, to discharge to this induction electrode, or lifts this induction electrode voltage；And
One sensing control signal source, is connected to this switch element, to provide an electric discharge reference voltage, or sensing reference electricity
Pressure,
The voltage level of wherein this electric discharge reference voltage is less than this sensing reference voltage,
Wherein, this boosting and discharge cell include a diode or the MOS transistor connecting into diode, this boosting
And discharge cell system receives a sensing control signal,
Wherein, this sensing control signal is an electronegative potential or is a high potential, wherein the voltage level of this electronegative potential is less than and is somebody's turn to do
The voltage level of high potential,
Wherein, when this sensing control signal is this electronegative potential, this boosting and discharge cell turn on, to allow this induction electrode to discharge,
Wherein, when this sensing control signal is this high potential, this boosting and discharge cell are closed, and are carried by capacitance coupling effect
Rise the current potential of this induction electrode.
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Families Citing this family (7)
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|---|---|---|---|---|
| JP6696853B2 (en) * | 2016-07-29 | 2020-05-20 | 株式会社ジャパンディスプレイ | Force detector |
| CN107943353B (en) * | 2016-10-13 | 2020-11-27 | 敦泰电子股份有限公司 | Electronic device and driving method thereof |
| CN109196453B (en) * | 2016-10-28 | 2022-05-10 | 敦泰电子有限公司 | Fingerprint sensing chip and terminal equipment |
| US10977972B2 (en) | 2018-11-09 | 2021-04-13 | HKC Corporation Limited | Signal measurement circuit and measurement method therefor |
| CN109360519B (en) * | 2018-11-09 | 2020-08-11 | 惠科股份有限公司 | Signal measuring circuit and measuring method thereof |
| CN109375839B (en) * | 2018-12-03 | 2020-06-30 | 武汉华星光电半导体显示技术有限公司 | Touch screen and display device |
| CN114721553B (en) * | 2022-06-06 | 2022-12-13 | 惠科股份有限公司 | Touch structure, OLED touch display panel and manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6323846B1 (en) * | 1998-01-26 | 2001-11-27 | University Of Delaware | Method and apparatus for integrating manual input |
| CN101726890A (en) * | 2008-10-28 | 2010-06-09 | 瀚宇彩晶股份有限公司 | Embedded capacitive induction input display device |
| CN102193676A (en) * | 2010-11-30 | 2011-09-21 | 友达光电股份有限公司 | Touch display panel, touch panel, touch element and touch circuit |
| CN102207655A (en) * | 2011-05-20 | 2011-10-05 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof, and liquid crystal display device |
-
2012
- 2012-08-14 CN CN201210288190.2A patent/CN103593077B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6323846B1 (en) * | 1998-01-26 | 2001-11-27 | University Of Delaware | Method and apparatus for integrating manual input |
| CN101726890A (en) * | 2008-10-28 | 2010-06-09 | 瀚宇彩晶股份有限公司 | Embedded capacitive induction input display device |
| CN102193676A (en) * | 2010-11-30 | 2011-09-21 | 友达光电股份有限公司 | Touch display panel, touch panel, touch element and touch circuit |
| CN102207655A (en) * | 2011-05-20 | 2011-10-05 | 北京京东方光电科技有限公司 | Array substrate and manufacturing method thereof, and liquid crystal display device |
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