CN103588478A - Lead titanate piezoelectric ceramics and preparation method - Google Patents
Lead titanate piezoelectric ceramics and preparation method Download PDFInfo
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- CN103588478A CN103588478A CN201310570895.8A CN201310570895A CN103588478A CN 103588478 A CN103588478 A CN 103588478A CN 201310570895 A CN201310570895 A CN 201310570895A CN 103588478 A CN103588478 A CN 103588478A
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Abstract
The invention relates to lead titanate piezoelectric ceramics. PbTiO3 is taken as a basic formula, Pb3O4 and TiO2 are taken as main raw materials, and La2O3 and MnO2 are added for modification to prepare the lead titanate piezoelectric ceramics with a piezoelectric strain constant (d33) up to (54*10<-12>)-(50*10<-11>)(C/N) and Curie temperature ranging from 440 DEG C to 480 DEG C. The ceramics prepared with the method are sintered easily, compact in structure, simple in operation, low in cost, and suitable for mass production, and can meet application requirements for special environments such as a high-temperature exploratory well, aerospace and the like.
Description
Technical field
The present invention relates to a kind of lead titanate piezoelectric ceramics, with La
2o
3and MnO
2for properties-correcting agent, make the high-temperature high-frequency lead titanate piezoelectric ceramics of modification, and a kind of preparation method of high-temperature high-frequency lead titanate piezoelectric ceramics is provided.
Background technology
Lead titanate PbTiO
3(being called for short PT) pottery is a kind of and BaTiO
3piezoelectricity, the ferroelectric material with the perovskite structure of analog structure, its Curie temperature is up to 490 ℃, and specific inductivity is low especially, and than the little order of magnitude of PZT, it is also good especially to the stability of time-temperature, is a kind of outstanding high-temperature high-frequency piezoceramic material.Its thickness, radial anisotropic are large especially, are applicable to unidirectional emission.Due to the large feature of its good high-temperature behavior, time-temperature aging resistance, anisotropy and good pyroelectric property, at high temperature prospect pit, metal defect detection, high-frequency element, space flight piezolectric gyroscope, for space flight, the aspect such as height indicator, man-made satellite horizon instrument, meteorological temperature sensing instrument has wide practical use.A lot of scientific research institutions have all carried out correlative study in recent years.But because its significant anisotropy causes sintering difficulty.When Curie temperature is crossed in ceramic body cooling, its crystal phase structure becomes Tetragonal from Emission in Cubic, and crystalline phase c-axis is significantly elongated, produces powerful stress and causes ceramic body cracked, even efflorescence.
Summary of the invention
The object of the present invention is to provide a kind of lead titanate piezoelectric ceramics, for a kind of lead titanate piezoelectric ceramics with high-temperature high-frequency performance, at PbTiO
3basic components on, add La
2o
3and MnO
2additive carries out modification, and its formula is: x (yPbTiO
3+ (1-y) La
2/3tiO
3the MnO of)+(1-x)
2, wherein x is that 0.98～0.995, y is 0.95～0.99,, counts in molar ratio Pb that is
3o
4, TiO
2, La
2o
3and MnO
2mol ratio be 0.31-0.328:0.98-0.995:0.005-0.025:0.005-0.02.After this formula is mixed, at the temperature of 850 ℃, be incubated 2 hours and carry out preheating, dry-pressing formed after fine grinding, at the temperature of 1200 ~ 1250 ℃, be incubated 2 hours and carry out sintering, the electric field heat-insulation pressure keeping that applies 4500V/mm at the temperature of 185 ~ 190 ℃ processing that polarizes for 10 minutes, can obtain the PbTiO of excellent property
3piezoelectric ceramics.
By a series of performance tests, its performance is:
Relative free dielectric constant ε
t r3: 180;
Loss tangent: 0.8%;
Thick in electromechanical coupling factor Kt:0.47;
Planar electromechanical coupling factor Kp:0.03;
Piezoelectric strain constant d
33: 54 * 10
-12~ 50 * 10
-11;
Curie temperature Tc:440 ~ 480 ℃;
Density p: 7.75 * 10
3kg/m
3.
The pottery that the method makes, easy-sintering, compact structure, simple to operate, low price, the particular surroundings that can meet high temperature deep well, space flight etc. requires lower application, is applicable to production in enormous quantities.
Embodiment
embodiment 1
By 212.7g Pb
3o
4, 80g TiO
2, 5.3g La
2o
3and 1.74g MnO
2after mixing, at the temperature of 850 ℃, be incubated 2 hours and carry out preheating in excessive ethanolic soln, dry-pressing formed after fine grinding, at the temperature of 1220 ℃, be incubated 2 hours and carry out sintering, the electric field heat-insulation pressure keeping that applies 4500V/mm at the temperature of the 185 ℃ processing that polarizes for 10 minutes, obtains PbTiO
3piezoelectric ceramics.
embodiment 2
By 221.7g Pb
3o
4, 80g TiO
2, 1.06g La
2o
3and 1.74g MnO
2after mixing, at the temperature of 850 ℃, be incubated 2 hours and carry out preheating in excessive ethanolic soln, dry-pressing formed after fine grinding, at the temperature of 1210 ℃, be incubated 2 hours and carry out sintering, the electric field heat-insulation pressure keeping that applies 4500V/mm at the temperature of the 188 ℃ processing that polarizes for 10 minutes, obtains PbTiO
3piezoelectric ceramics.
embodiment 3
By 216g Pb
3o
4, 80g TiO
2, 5.4g La
2o
3and 0.43g MnO
2after mixing, at the temperature of 850 ℃, be incubated 2 hours and carry out preheating in excessive ethanolic soln, dry-pressing formed after fine grinding, at the temperature of 1230 ℃, be incubated 2 hours and carry out sintering, the electric field heat-insulation pressure keeping that applies 4500V/mm at the temperature of the 190 ℃ processing that polarizes for 10 minutes, obtains PbTiO
3piezoelectric ceramics.
embodiment 4
By 225g Pb
3o
4, 80g TiO
2, 1.08g La
2o
3and 0.43g MnO
2after mixing, at the temperature of 850 ℃, be incubated 2 hours and carry out preheating in excessive ethanolic soln, dry-pressing formed after fine grinding, at the temperature of 1250 ℃, be incubated 2 hours and carry out sintering, the electric field heat-insulation pressure keeping that applies 4500V/mm at the temperature of the 185 ℃ processing that polarizes for 10 minutes, obtains PbTiO
3piezoelectric ceramics.
Claims (3)
1. a lead titanate piezoelectric ceramics, is characterized in that, with PbTiO
3for basic components, Pb
3o
4and TiO
2for main raw material, add La
2o
3and MnO
2it is carried out to modification, make piezoelectric strain constant (d
33) reach 54 * 10
-12-50 * 10
-11(C/N), Curie temperature is the lead titanate ceramics of 440-480 ℃.
2. lead titanate piezoelectric ceramics according to claim 1, is characterized in that, counts in molar ratio Pb
3o
4, TiO
2, La
2o
3and MnO
2mol ratio be 0.31-0.328:0.98-0.995:0.005-0.025:0.005-0.02.
3. a preparation method for lead titanate piezoelectric ceramics, is characterized in that, comprises the steps:
1) by Pb
3o
4, TiO
2, La
2o
3and MnO
2after fully mixing in ethanolic soln according to the proportioning of formula, be pressed into bulk, at 850 ℃ of temperature, be incubated 2h;
2) by said mixture after 1-2mm sieve is crossed in fine grinding, at 1200-1250 ℃ of temperature, be incubated 2h and carry out sintering, and be cooled to normal temperature;
By step 2) in machined, the jacketed electrode of mixture after, the electric field pressurize 10min that applies 4500V/mm at the temperature of the 185-190 ℃ processing that polarizes.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104230331A (en) * | 2014-09-12 | 2014-12-24 | 中船重工海声科技有限公司 | High-temperature piezoelectric ceramic and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100705B (en) * | 1985-04-01 | 1986-08-06 | 中国科学院声学研究所 | The lead titanate piezoelectric ceramic material of low Qm |
| CN1111388A (en) * | 1993-12-01 | 1995-11-08 | 松下电器产业株式会社 | Ferroelectric thin films and their preparation |
| CN1958509A (en) * | 2006-11-27 | 2007-05-09 | 浙江嘉康电子股份有限公司 | Modified PZT piezoelectric ceramics with Nano powder being added directly, and preparation method |
| CN101717251A (en) * | 2009-12-04 | 2010-06-02 | 北京工业大学 | Modified lead titanate piezoelectric ceramic material and preparation method thereof |
-
2013
- 2013-11-15 CN CN201310570895.8A patent/CN103588478A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100705B (en) * | 1985-04-01 | 1986-08-06 | 中国科学院声学研究所 | The lead titanate piezoelectric ceramic material of low Qm |
| CN1111388A (en) * | 1993-12-01 | 1995-11-08 | 松下电器产业株式会社 | Ferroelectric thin films and their preparation |
| CN1958509A (en) * | 2006-11-27 | 2007-05-09 | 浙江嘉康电子股份有限公司 | Modified PZT piezoelectric ceramics with Nano powder being added directly, and preparation method |
| CN101717251A (en) * | 2009-12-04 | 2010-06-02 | 北京工业大学 | Modified lead titanate piezoelectric ceramic material and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104230331A (en) * | 2014-09-12 | 2014-12-24 | 中船重工海声科技有限公司 | High-temperature piezoelectric ceramic and preparation method thereof |
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Application publication date: 20140219 |