CN103580714A - Multi-chip integrated millimeter wave wireless-connected transmit-receive system - Google Patents
Multi-chip integrated millimeter wave wireless-connected transmit-receive system Download PDFInfo
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Abstract
The invention provides a multi-chip integrated millimeter wave wireless-connected transmit-receive system. The multi-chip integrated millimeter wave wireless-connected transmit-receive system is characterized in that a TDD mode is adopted, the transmitting front end and the receiving front end are of the same millimeter wave frequency band, and the system comprises a transmitting front end module, a receiving front end module, a frequency synthesizer module and a frequency multiplier chain module. In the multi-chip integrated millimeter wave wireless-connected transmit-receive system, MMICs of different functions achieve signal interconnection through an on-chip microstrip line or through a microstrip line arranged on a package carrier to form the transmit-receive system. In order to achieve an SoC, the chips of the different functions are made by the same semiconductor material technology; in order to achieve better system performance, the chips of the different functions are made by different semiconductor material technologies and are arranged on the package carrier by mixture and integration. The multi-chip integrated millimeter wave wireless-connected transmit-receive system is of a zero intermediate frequency structure or a superheterodyne structure.
Description
Technical field
The present invention relates to a kind of wireless communication system.Specifically about the integrated wireless interconnected receive-transmit system of millimeter wave of a kind of multi-chip.
Background technology
One large application of millimeter wave (more than 70GHz) is millimetre-wave attenuator.Because the lasting upgrading requirement to two-forty, high-bandwidth communication, and avoid the signal producing because of the intensive use of low-frequency range frequency spectrum to disturb, a developing direction of microwave and millimeter wave technology is to the higher frequency range upgrading of frequency in the world.In the past few years, along with the chip of Ka wave band and 8mm wave band (～30GHz) and the progressively ripe and popularization of application technology, in 60GHz and E wave band (71-86GHz) frequency range of higher frequency, even more the W wave band (70-110GHz) of high band also becomes the forward position of millimeter-wave technology development field in the world.
International Telecommunications Union (ITU-R) has announced the international standard of E wave band radio communication, and usable spectrum is comprised of two different frequency ranges, comprises low-frequency range 71GHz～76GHz and high band 81GHz～86GHz.E wave band radio communication is applicable to the interconnected grade of ultrahigh speed application between base station, more than wireless transmission rate can reach 1Gbps.
Patent of invention (Stephen James Connsolazio, " E-band radio transceiver architecture and chip set ", US20050170789 (WO2005074464A2), Aug.4, 2005, referenced patent 1) disclosed the chipset that microwave/millimeter wave monolithic integrated circuit chip (MMIC) prepared by a kind of different process that utilizes same semi-conducting material GaAs (GaAs) forms E-wave band, and pass through a plurality of chips of difference in functionality (as amplifier, oscillator, frequency multiplier etc.) mix integrated, realize the receive-transmit system technology of E wave band radio communication.Front end of emission and receiving front-end in this patent of invention receive-transmit system adopt different frequencies, and for example, front end of emission adopts 71-76GHz, and receiving front-end adopts 81-86GHz, thereby the frequency division of realizing receive-transmit system is used (FDD) pattern mutually.The receiving unit of this patent of invention adopts double conversion.
Paper (O.Katz, R.Ben-Yishay, R.Carmon, B.Sheinman, F.Szenher, D.Papae, and D.Elad, " High-power high-linearity SiGe based E-band transceiver chipset for broadband communication ", IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2012, list of references 1) introduced a kind of E-wave band monolithic integrated circuit chip group completing with germanium silicon (SiGe) technological design of silicon (Si) backing material.This chipset adopts super-heterodyne architecture, realizes the Wireless communication transceiver system of E wave band by the integrated a plurality of chips of monolithic.The Wireless communication transceiver system that this chipset is realized is operated in the upstream frequency of downstream frequency and the 81-86GHz of 71-76GHz, thereby the frequency division of realizing receive-transmit system is used (FDD) pattern mutually.This chipset can be realized the transmitting power of 17.5-18.5dBm.
For the interconnected grade of base station ultrahigh speed, specifically apply, along with the microminiaturized and extensive application of base station, a significant consideration of E wave band wireless communication system is how to realize the performance of wireless transceiver system, the equilibrium between price and optimization.The fdd mode that referenced patent 1 and list of references 1 adopt, because front end of emission and receiving front-end adopt different frequency range, therefore the interference between front end of emission and receiving front-end is little, contributes to improve the isolation of receive-transmit system, reduces the phase mutual interference between receiving and transmitting signal.Yet fdd mode front end of emission and receiving front-end must respectively take a communication channel, use mutually (TDD) pattern to take more channel resource compared with the time-division.Tdd mode can arrange uplink and downlink conversion constantly neatly, for realizing asymmetric uplink and downlink service bandwidth, is conducive to realize the asymmetric Internet service of obvious uplink and downlink.With tdd mode comparison, system complexity and the cost of fdd mode are higher, and for example, signal demand is connected to antenna through duplexer, to guarantee that signal can phase mutual interference.And just not there is not this problem in tdd mode, not only exempted the caused insertion loss of access duplexer, make the transmitting-receiving processing of signal become simple, also reduce cost simultaneously, reduced the volume of equipment.
In addition, in the receive-transmit system of referenced patent 1 and list of references 1, millimeter wave monolithic integrated circuit chip (MMIC) technique that the chip of difference in functionality adopts is based on same semiconductor substrate materials (as GaAs or Si) technique.Adopt same semiconductor substrate materials to there is the advantage of the integrated various difference in functionality chips of monolithic.But, thereby the unification of backing material has limited according to different materials and technique and has realized the flexibility that different chips improve chip performances, cannot realize the object of optimization system performance.
In addition, the receiving system of referenced patent 1 and list of references 1 all adopts the super-heterodyne architecture of double conversion, although channel selectivity is better in theory, but need high Q value image-reject filter and channel selection filter, these filters may be realized at sheet hardly, thereby have increased complexity, cost and the size of receiver.
Summary of the invention
Because the disappearance of above-mentioned prior art, the integrated wireless interconnected receive-transmit system of millimeter wave of a kind of multi-chip of the present invention is present in those disappearances of the prior art by solution.
Receive-transmit system of the present invention adopts the time-division to use mutually (TDD) pattern.The frequency of its front end of emission of the receive-transmit system of tdd mode and receiving front-end adopts identical frequency range, strengthens the flexibility of uplink and downlink channel configuration when reducing receive-transmit system complexity.And the interference between receiving and transmitting signal under tdd mode can suppress by improving chip linearity performance.
For the realization of tdd mode receive-transmit system, except super-heterodyne architecture can also adopt single-conversion (zero intermediate frequency) structure.Zero-if architecture does not need high Q value image-reject filter and channel selection filter, has reduced receive-transmit system complexity.Because the useful signal low-limit frequency in intermediate frequency is higher, can AC coupled between frequency mixer and intermediate frequency amplifier, the DC maladjustment that zero-if architecture brings can be effectively suppressed.In addition, due to the channel width of millimeter wave (as E-wave band) radio communication larger (as～250MHz), channel spacing is corresponding increase also, and relatively easy thereby channel is selected to become, zero-if architecture can meet the requirement of channel selectivity.
Realization for tdd mode receive-transmit system, the device chip of difference in functionality can adopt identical semiconductor substrate materials technique, form system integrated chip (system on chip, SoC), also can adopt different semiconductor substrate materials technique, prepared related chip is by mixing integrated formation receive-transmit system.Alternative semi-conducting material technique comprises, GaAs (GaAs) technique, indium phosphide (InP) technique, gallium nitride (GaN) technique (carborundum or Sapphire Substrate), germanium silicon (SiGe) technique, and silicon (Si) technique.Integrated circuit (IC) chip prepared by several different process has performance advantage separately, for example, the heterojunction bipolar transistor of GaAs (HBT) has the lower phase noise of counterfeit High Electron Mobility Transistor (PHEMT) than GaAs, and the voltage controlled oscillator chip noise of preparing frequency synthesizer is lower, performance is better.The PHEMT of GaAs has the electron mobility higher than SiGe, during for the preparation of power amplifier, can provide higher power output, thereby meets the middle and long distance millimeter wave radio communication of (as surpassed 3km).In addition, the power amplifier of GaN technique has larger power output, lower power consumption, higher efficiency.It is high that the complementary metal oxide semiconductors (CMOS) of Si substrate (CMOS) technique has integrated level, easily realizes the feature of large-scale complex functional circuit.The low noise amplifier of InP technique has the noise lower than the low noise amplifier of GaAs technique.Mmic chip prepared by above different process is integrated by mixing, and can realize the P/C ratio that millimeter wave Wireless communication transceiver system is higher, thereby meet the wireless interconnected application of different condition.
The present invention proposes and adopt the time-division to use mutually (TDD) pattern to realize the wireless interconnected receive-transmit system of the integrated millimeter wave of a kind of multi-chip, by this system, realize millimeter wave ultrahigh speed radio communication.As Fig. 1, what its front end of emission of described system and receiving front-end adopted is same frequency range, as the low-frequency range 71～76GHz in E wave band millimeter wave communication standard, or high band 81～86GHz.As a comparison, the frequency division that the Millimeter-wave Wireless Communication System: of referenced patent 1 and list of references 1 adopts is used (FDD) pattern (as Fig. 2, Fig. 3) mutually, in its receive-transmit system, front end of emission and receiving front-end adopt different millimeter wave frequency bands, there is busy channel resource many, the inferior position such as system complex, volume are large.And channel resource utilance of the present invention is high, reduced system complexity, reduced cost.
Preferably, the microwave&millimeter-wave IC chip (MMIC) of realizing difference in functionality in the integrated wireless interconnected receive-transmit system of millimeter wave of this multi-chip adopts the preparation of same semi-conducting material technique, as the SiGe material of GaAs or Si substrate, form system integrated chip (SoC), thereby the integrated level that improves system, is applicable to as the short-distance and medium-distance communication between small base station.
Referenced patent 1 and the FDD receive-transmit system technology of list of references 1 are to adopt same semiconductor substrate materials (as the SiGe material of GaAs or Si substrate etc.) to prepare different chips, have potential can single chip integrated advantage, but cannot give full play to the advantage separately of different semi-conducting materials (as GaAs, InP, SiGe, GaN etc.).
By realizing the chip of difference in functionality on the semi-conducting material technique basis different, will realize the performance optimization of different chips, and by mixing integrated preparation on package carrier, form receive-transmit system and improve the performance of receive-transmit system.This system is applicable to as the middle and long distance communication between large-scale base station.
Preferably, the microwave&millimeter-wave IC chip (MMIC) of realizing difference in functionality in the integrated wireless interconnected receive-transmit system of millimeter wave of this multi-chip adopts different semi-conducting material technique preparations, and by mixing integrated formation receive-transmit system.
Preferably, for the channel width of broadband connections is large, channel spacing is larger, and the relative not high feature of required receive-transmit system channel selectivity, the integrated wireless interconnected receive-transmit system of millimeter wave of this multi-chip adopts zero-if architecture, compare the super-heterodyne architecture of list of references 1 (as Fig. 3), reduce system complexity, reduced number of chips, reduced cost.
Preferably, more for a certain specific region user (or base station), in the narrower situation of channel width, the integrated wireless interconnected receive-transmit system of millimeter wave of this multi-chip adopts super-heterodyne architecture, improves channel selectivity, improves communication quality.
The present invention also provides the solution for the integrated millimeter wave Wireless communication transceiver system of a kind of multi-chip of tdd mode.
Referring to Fig. 1 is the wireless interconnected receive-transmit system block diagram of the integrated millimeter wave of a kind of multi-chip, it is characterized in that this wireless interconnected receive-transmit system adopts the time-division to use mutually (TDD) pattern, and its front end of emission and receiving front-end adopt same millimeter wave frequency band.
The wireless interconnected receive-transmit system of described tdd mode millimeter wave comprises following 4 (A, B, C, D) major parts:
A part: transmitting front-end module, comprise two unit (A1, A2), wherein A1 is up-conversion mixer, A2 is power amplifier;
B part: receiving front-end module, comprise two unit (B1, B2), wherein B1 is down-conversion mixer, B2 is low noise amplifier;
C part: frequency synthesizer module, comprise two unit (C1, C2), wherein C1 is oscillator unit, comprises voltage controlled oscillator, buffer amplifier, power divider, C2 is phase-locked loop;
D part: frequency multiplier chain module, comprises frequency multiplier, amplifier, band pass filter, power divider, buffer amplifier.
Transmitting front-end module in the wireless interconnected receive-transmit system of described tdd mode millimeter wave is used for launching millimeter-wave signal, receiving front-end module is used for receiving millimeter-wave signal, frequency synthesizer module is for generation of a stable microwave or millimeter-wave frequency signal, and frequency multiplier chain module is carried out frequency multiplication for the frequency signal that frequency synthesizer module is provided.
In transmitting front-end module (A part), up-conversion mixer A1 upconverts to millimeter wave band baseband signal S1, the radio-frequency (RF) output end of up-conversion mixer A1 meets power amplifier A2, and millimeter-wave signal arrives space by antenna transmission after being amplified in power amplifier A2.
In receiving front-end module (B part), from antenna reception to millimeter-wave signal S3, after amplifying by low noise amplifier (B2), deliver to down-conversion mixer B1, down-conversion mixer B1 down-converts to receiving terminal baseband signal S4 output by signal, finally, be input to base band and carry out Digital Signal Processing.
Oscillator unit C1 in frequency synthesizer module (C part) produces the stable two-way frequency signal ，Yi road frequency signal of low phase noise and sends into frequency multiplier chain module, and phase-locked loop C2 is sent on another road.Phase-locked loop C2 is used to increase the stability of frequency synthesizer output frequency signal, reduces the clock jitter (jitter) of this frequency signal.
Frequency multiplier chain module (D part) is by frequency multiplication, filtering, amplification, power division, buffered, output two-way millimeter-wave frequency signal, one tunnel is as local oscillator (LO) signal of up-conversion mixer A1, and another road is as local oscillator (LO) signal of down-conversion mixer B1.
The wireless interconnected receive-transmit system of described tdd mode millimeter wave, the microwave&millimeter-wave IC chip (MMIC) of wherein realizing difference in functionality is interconnected by realizing signal at sheet microstrip line, or it is interconnected that the microstrip line by preparation on package carrier is realized signal, and form receive-transmit system.
The chip of realizing difference in functionality in described receive-transmit system can adopt identical semi-conducting material technique preparation to form system integrated chip, also can adopt different semi-conducting material technique preparations to mix integrated again, forms receive-transmit system on package carrier.
Described receive-transmit system can adopt zero-if architecture, also can adopt super-heterodyne architecture.
Preferably, in the wireless interconnected receive-transmit system of this tdd mode millimeter wave, the up-conversion mixer of described transmitting front-end module can adopt counterfeit High Electron Mobility Transistor (PHEMT) the technique preparation of GaAs (GaAs) or gallium nitride (GaN) material; Power amplifier adopts the PHEMT technique preparation of GaAs material or GaN material; Or power amplifier adopts bipolar transistor (HBT) the technique preparation of germanium silicon (SiGe).
Preferably, in the wireless interconnected receive-transmit system of this tdd mode millimeter wave, the down-conversion mixer of described receiving front-end module adopts the PHEMT technique preparation of GaAs or indium phosphide (InP) material, and low noise amplifier adopts the PHEMT technique preparation of GaAs or InP material; Or low noise amplifier adopts bipolar transistor (HBT) the technique preparation of germanium silicon (SiGe).
Preferably, in the wireless interconnected receive-transmit system of this tdd mode millimeter wave, described frequency synthesizer module is when output low frequency rate signal, oscillator unit adopts heterojunction bipolar transistor (HBT) technique of GaAs material or the preparation of the HBT technique of germanium silicon (SiGe) material, or oscillator unit adopts complementary metal oxide semiconductors (CMOS) (CMOS) the technique preparation of silicon (Si) material; When output high-frequency signal, the PHEMT technique preparation of oscillator unit or GaAs material; Phase-locked loop adopts complementary metal oxide semiconductors (CMOS) (CMOS) technique of silicon (Si) material or the preparation of the HBT technique of germanium silicon (SiGe) material.
Preferably, in the wireless interconnected receive-transmit system of this tdd mode millimeter wave, described frequency multiplier chain module adopts the PHEMT technique preparation of GaAs or GaN material; Or frequency multiplier chain module adopts the bipolar transistor (HBT) of germanium silicon (SiGe).Frequency multiplier quantity in described frequency multiplier chain module, frequency multiplication multiple, band pass filter quantity are changed accordingly with the height of frequency synthesizer module output frequency.When described frequency synthesizer module output frequency is 11.5-14.5GHz, frequency multiplier chain module comprises two (X2) frequency multiplier, three (X3) frequency multiplier, amplifier, two band pass filters, power divider, the buffer amplifier corresponding with frequency multiplier; When frequency synthesizer module output frequency is 35.5-43GHz, frequency multiplier chain module comprises varactor doubler, amplifier, a band pass filter, power divider, the buffer amplifier corresponding with frequency multiplier; When frequency synthesizer module output frequency is 71-86GHz, frequency multiplier chain module comprises amplifier, band pass filter, power divider, buffer amplifier.
Preferably, the wireless interconnected receive-transmit system of this tdd mode millimeter wave, when in each module comprising, any two or more devices adopt commaterial technique to prepare, is integrated in two or more devices on a chip.
The wireless interconnected receive-transmit system of described tdd mode millimeter wave, its operating frequency comprises 71GHz-76GHz or the 81GHz-86GHz of E-wave band in millimere-wave band, in each frequency band, receive and send the channel of 1 to 4 1.25GHz or 1 to 4 250MHz, and realize and communicating by letter with other receive-transmit systems with full duplex mode.
The wireless interconnected receive-transmit system of described tdd mode millimeter wave, this receive-transmit system is in conjunction with baseband system and data source, form the wireless interconnected communication system of millimeter wave, described wireless interconnected communication system comprises two and the millimeter wave base station that communicates with one another above, and each base station comprises baseband system, receive-transmit system and data source.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention will be further described.
Fig. 1 is the integrated wireless interconnected receive-transmit system block diagram (exemplary embodiment 1) of a kind of multi-chip.
Fig. 2 is the receive-transmit system block diagram of the fdd mode of referenced patent 1.
Fig. 3 is the receive-transmit system block diagram of the super-heterodyne architecture fdd mode of list of references 1.
Fig. 4 is the integrated wireless interconnected receive-transmit system block diagram (exemplary embodiment 2) of a kind of multi-chip.
Fig. 5 is the integrated wireless interconnected receive-transmit system block diagram (exemplary embodiment 3) of a kind of multi-chip.
Fig. 6 is that the integrated wireless interconnected receive-transmit system of a kind of multi-chip is in the mutual communication scheme of E wave band.
Fig. 7 is a wireless interconnected communication system schematic diagram of typical millimeter wave.
Wherein
A-transmitting front-end module
B-receiving front-end module
C-frequency synthesizer module
D-frequency multiplier chain module
A1-up-conversion mixer
A2-power amplifier
B1-down-conversion mixer
B2-low noise amplifier
C1-oscillator unit
C11-voltage controlled oscillator
C12-power divider
C13-buffer amplifier
C2-phase-locked loop
D11-bis-(X2) frequency multiplier
D12-band pass filter
D13-amplifier
D14-tri-(X3) frequency multiplier
D15-band pass filter
D16-power divider
D17-buffer amplifier
D18-buffer amplifier
C14-voltage controlled oscillator
C15-power divider
C16-buffer amplifier
D21-X2 frequency multiplier
D22-band pass filter
C17-voltage controlled oscillator
C18-power divider
C19-buffer amplifier
D31-band pass filter
The baseband signal of S1-for launching
S2-power amplifier output signal
The signal of S3-antenna reception
S4-receiving terminal baseband signal
S5-derived reference signal
S6-inputs data
S7-exports data
TX-front end of emission
RX-receiving front-end
T5-data source
W1-wireless link
F
0-mono-specific millimeter wave frequency band (as 71GHz～76GHz frequency range or 81GHz-86GHz frequency range)
T-base station
T4-baseband system
Embodiment
Below in conjunction with specific embodiment, further illustrate the present invention, should understand these embodiment is only not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims item to the modification of the various equivalent form of values of the present invention and require limited range.
The first exemplary embodiment of the present invention:
Fig. 1 system is designated as T1, adopts zero-if architecture, comprises 4 major parts (A, B, C, D):
In transmitting front-end module (A part), up-conversion mixer A1 adopts the PHEMT technique preparation of GaAs or GaN material, power amplifier A2 adopts the PHEMT technique preparation of GaAs material or GaN material, and power amplifier A2 also can adopt the HBT technique preparation of SiGe material.
In receiving front-end module (B part), down-conversion mixer B1 adopts the PHEMT technique preparation of GaAs or InP material, low noise amplifier B2 adopts the PHEMT technique preparation of GaAs or InP material, and low noise amplifier B2 also can adopt the HBT technique preparation of SiGe material.
In frequency synthesizer module (C part), oscillator unit C1 adopts the HBT technique of GaAs material or the preparation of the HBT technique of SiGe material, and phase-locked loop C2 adopts the CMOS technique of Si material or the preparation of the HBT technique of SiGe material.
Frequency multiplier chain module (D part) adopts the PHEMT technique preparation of GaAs or GaN material.
A is partly transmitting front-end module, for launching millimeter-wave signal (as E wave band millimeter wave signal).Up-conversion mixer A1 upconverts to E wave band baseband signal S1, the radio-frequency (RF) output end of up-conversion mixer A1 meets power amplifier A2, millimeter-wave signal is amplified in power amplifier A2, make continuous wave (CW) power output reach approximately 300 milliwatts (approximately+25dBm) or more than.Consider the loss of up-conversion mixer A1, the be approximately+20dBm of normal range (NR) of power amplifier A2 power output or more than.The output signal S2 of power amplifier A2 sends into antenna.
B is partly receiving front-end module, for receiving millimeter-wave signal (as E wave band millimeter wave signal).Low noise amplifier B2 can provide selectivity (variable) gain, has reduced the noise factor (NF) of receiving front-end module when guaranteeing the linearity (P1dB) performance.Low noise amplifier B2 delivers to down-conversion mixer B1 after the signal S3 of antenna reception is amplified, and down-conversion mixer B1 down-converts to receiving terminal baseband signal S4 output by signal.
C is partly frequency synthesizer module, for generation of a stable frequency signal.Wherein the HBT technique preparation of GaAs or SiGe for oscillator unit C1, because the flicker noise of HBT device is low, can obtain like this voltage controlled oscillator of low phase noise, and the process costs of HBT is lower, can reduce the cost of receive-transmit system; Oscillator unit C1 also can adopt the CMOS technique preparation of Si material, when meeting performance, has low-cost advantage.Voltage controlled oscillator C11 produces the frequency signal of 11.5-14.5GHz, meets power divider C12 and is divided into two-way frequency signal ，Yi road frequency signal connects frequency multiplier chain module after buffer amplifier C13 amplifies, and another road meets phase-locked loop C2.Specifically, can suitably increase selective resonance circuit at voltage controlled oscillator C11, make its output frequency signal after frequency multiplier chain module (D part), obtain covering the frequency signal of whole E wave band.C2 is phase-locked loop, and phase-locked loop is used to increase the stability of frequency synthesizer output frequency signal, reduces the clock jitter (jitter) of this frequency signal.C2 part can meet complicated frequency tuning and control function with the preparation of CMOS technique, takies again less chip area, reduces the cost of whole chipset.Phase-locked loop C2 can comprise a phase discriminator, a charge pump and an adjustable frequency divider of frequency dividing ratio.Signal source S5 provides reference frequency for phase-locked loop C2, and signal source S5 can be a crystal oscillator.
D is partly frequency multiplier chain module, for the frequency signal that frequency synthesizer module is provided, carries out frequency multiplication.The frequency signal that frequency synthesizer module provides (11.5-14.5GHz) first factors two to 23-29GHz by two (X2) frequency multiplier D11 frequency, in band pass filter D12, carry out subsequently filtering, wherein less desirable approximately other frequency multiplication output frequency components by filtering (as a frequency multiplication frequency component, frequency tripling frequency component), in amplifier D13, be amplified to approximately again+10dBm, again by X3 frequency multiplier D14, frequency is raised to 71 required-86GHz of E wave band from 23-29GHz, then through band pass filter D15, carry out filtering, other frequency components outside filtering E wave band, be sent to afterwards power divider D16 and be divided into two paths of signals, one road signal connects buffer amplifier D17 output as local oscillator (LO) signal of up-conversion mixer A1, another road signal connects buffer amplifier D18 output as local oscillator (LO) signal of down-conversion mixer B1.Power divider D16 can be a Wilkinson type power divider.In order to dwindle integral module volume, band pass filter D12, band pass filter D15 and power divider D16 utilize and realize at sheet microstrip line.Buffer amplifier D17, D18 input power approximately-10dBm, power output approximately+10dBm.Further understand, the enlarging function of buffer amplifier D17, D18 also can complete with a plurality of amplifiers.
To realize millimeter wave wireless interconnected by transmitting and receiving the millimeter-wave signal (as 71GHz～76GHz frequency range or 81GHz-86GHz frequency range) of a special frequency channel for above system.
The second exemplary embodiment of the present invention:
Fig. 4 system is designated as T2, adopts zero-if architecture, also comprises 4 major parts (A, B, C, D).What aspect preparation technology, same the first exemplary embodiment was different is the PHEMT technique preparation that C1 partly adopts GaAs material, this be because, on the one hand, the voltage controlled oscillator of preparing compared with the PHEMT technique of HBT technique GaAs material can be exported the signal of higher frequency, although the phase noise of voltage controlled oscillator performance that on the other hand prepared by PHEMT technique is slightly poor, but corresponding the reducing of frequency multiplication multiple providing due to frequency multiplier chain module, the phase noise that frequency multiplier chain module is introduced reduces, the local oscillation signal phase noise that finally offers up-conversion mixer and down-conversion mixer worsens little.Voltage controlled oscillator C14 produces the signal of 35.5-43GHz, and frequency multiplier chain module comprises two (X2) frequency multiplier D21, band pass filter D22, power divider D16, buffer amplifier D17 and buffer amplifier D18.
The 3rd exemplary embodiment of the present invention:
Fig. 5 system is designated as T3, adopts zero-if architecture, also comprises 4 major parts (A, B, C, D).Identical with the second exemplary embodiment aspect preparation technology.Voltage controlled oscillator C17 produces the signal of 71-86GHz, and the frequency multiplier in frequency multiplier chain modular circuit can omit, and can further reduce circuit complexity like this, circuit is reached and simplify most, improves integrated level and dwindles chip area simultaneously.Frequency multiplier chain module comprises band pass filter D31, power divider D16, buffer amplifier D17 and buffer amplifier D18.
Other features of the present invention and aspect:
Fig. 6 has shown that two wireless interconnected receive-transmit systems of millimeter wave are each other by the communication of wireless link W1, and they have adopted TDD communication mode.Front end of emission and receiving front-end adopt same frequency range, and complete transmission duplex communication in different time slots.In each frequency band, receive and send the channel of 1-4 1.25GHz or 1-4 250MHz, and communicate by letter with other receive-transmit systems with full duplex mode.
Fig. 7 has shown a wireless interconnected communication system schematic diagram of typical millimeter wave.This schematic diagram goes for E-band communication.Specifically, typical E-band communication system is a Point-to-Point system, and it utilizes two base station T to transmit and receive data in E-audio range frequency by wireless link W1.Each base station T comprises millimeter wave transceiving system T1, T2, and at least one in T3, also comprises that baseband system T4 is for supporting various systemic-functions, in addition, each base station also comprises data source T5.
Claims (14)
1. the integrated wireless interconnected receive-transmit system of millimeter wave of multi-chip, is characterized in that this system adopts the time-division to use mutually (TDD) pattern, and its front end of emission and receiving front-end adopt same millimeter wave frequency band; This system comprises transmitting front-end module, receiving front-end module, frequency synthesizer module and frequency multiplier chain module, wherein transmitting front-end module comprises up-conversion mixer and power amplifier, receiving front-end module comprises down-conversion mixer and low noise amplifier, frequency synthesizer module comprises oscillator unit and phase-locked loop, frequency multiplier chain module comprises frequency multiplier, amplifier, band pass filter, power divider and buffer amplifier, and oscillator unit comprises voltage controlled oscillator, buffer amplifier, power divider;
Transmitting front-end module is used for launching millimeter-wave signal, receiving front-end module is used for receiving millimeter-wave signal, frequency synthesizer module is for generation of a stable microwave or millimeter-wave frequency signal, and frequency multiplier chain module is carried out frequency multiplication for the frequency signal that frequency synthesizer module is provided;
The microwave&millimeter-wave IC chip (MMIC) of realizing difference in functionality in this system is interconnected by realizing signal at sheet microstrip line, or it is interconnected by the microstrip line of preparation on package carrier, to realize signal, and forms receive-transmit system.
2. the integrated wireless interconnected receive-transmit system of millimeter wave of a kind of multi-chip according to claim 1, is characterized in that the microwave&millimeter-wave IC chip (MMIC) of realizing difference in functionality in this system adopts the preparation of same semi-conducting material technique.
3. the integrated wireless interconnected receive-transmit system of millimeter wave of a kind of multi-chip according to claim 1, is characterized in that the microwave&millimeter-wave IC chip (MMIC) of realizing difference in functionality in this system adopts different semi-conducting material technique preparations.
4. the integrated wireless interconnected receive-transmit system of millimeter wave of a kind of multi-chip according to claim 1, is characterized in that this system adopts zero-if architecture.
5. the integrated wireless interconnected receive-transmit system of millimeter wave of a kind of multi-chip according to claim 1, is characterized in that this system adopts super-heterodyne architecture.
6. according to described in claim 1 or 3, the wireless interconnected receive-transmit system of integrated millimeter wave, is characterized in that the up-conversion mixer of described transmitting front-end module adopts counterfeit High Electron Mobility Transistor (PHEMT) technique of GaAs (GaAs) or gallium nitride (GaN) material to prepare; Power amplifier adopts the PHEMT technique preparation of GaAs material or GaN material; Or power amplifier adopts bipolar transistor (HBT) the technique preparation of germanium silicon (SiGe).
7. according to described in claim 1 or 3, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, the down-conversion mixer that it is characterized in that described receiving front-end module adopts the PHEMT technique of GaAs or indium phosphide (InP) material to prepare, and low noise amplifier adopts the PHEMT technique preparation of GaAs or InP material; Or low noise amplifier adopts bipolar transistor (HBT) the technique preparation of germanium silicon (SiGe).
8. according to described in claim 1 or 3, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, it is characterized in that described frequency synthesizer module is when output low frequency rate signal, oscillator unit adopts heterojunction bipolar transistor (HBT) technique of GaAs material or the preparation of the HBT technique of germanium silicon (SiGe) material, or oscillator unit adopts complementary metal oxide semiconductors (CMOS) (CMOS) the technique preparation of silicon (Si) material; When output high-frequency signal, oscillator unit adopts the PHEMT technique preparation of GaAs material; Phase-locked loop adopts complementary metal oxide semiconductors (CMOS) (CMOS) technique of silicon (Si) material or the preparation of the HBT technique of germanium silicon (SiGe) material.
9. according to described in claim 1 or 3, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, is characterized in that described frequency multiplier chain module adopts the PHEMT technique preparation of GaAs or GaN material; Or frequency multiplier chain module adopts bipolar transistor (HBT) the technique preparation of germanium silicon (SiGe).
10. according to claim 1, the wireless interconnected receive-transmit system of integrated millimeter wave, is characterized in that frequency multiplier quantity, frequency multiplication multiple, the band pass filter quantity in described frequency multiplier chain module is changed accordingly with the height of frequency synthesizer module output frequency.
11. according to claim 10, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, while it is characterized in that described frequency synthesizer module output frequency is 11.5-14.5GHz, frequency multiplier chain module comprises two (X2) frequency multiplier, three (X3) frequency multiplier, amplifier, two band pass filters, power divider, the buffer amplifier corresponding with frequency multiplier; When frequency synthesizer module output frequency is 35.5-43GHz, frequency multiplier chain module comprises varactor doubler, amplifier, a band pass filter, power divider, the buffer amplifier corresponding with frequency multiplier; When frequency synthesizer module output frequency is 71-86GHz, frequency multiplier chain module comprises amplifier, band pass filter, power divider, buffer amplifier.
12. according to claim 1, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, when described in it is characterized in that, in each module of this system, any two or more devices adopt commaterial technique to prepare, two or more devices are integrated on a chip.
13. according to claim 1, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, the operating frequency that it is characterized in that described this system is 71GHz-76GHz or the 81GHz-86GHz of E-wave band, in each frequency band, receive and send the channel of 1 to 4 1.25GHz or 1 to 4 250MHz, and realize and communicating by letter with other receive-transmit systems with full duplex mode.
14. according to claim 1, the wireless interconnected receive-transmit system of millimeter wave that a kind of multi-chip is integrated, it is characterized in that described this system is in conjunction with baseband system and data source, form the wireless interconnected communication system of millimeter wave, described wireless interconnected communication system comprises two and the millimeter wave base station that communicates with one another above, and each base station comprises baseband system, receive-transmit system and data source.
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