CN103579723A - High-selectivity bandpass filter based on I-shaped dual-mode resonator - Google Patents
High-selectivity bandpass filter based on I-shaped dual-mode resonator Download PDFInfo
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Abstract
The invention discloses a high-selectivity bandpass filter based on an I-shaped dual-mode resonator. The high-selectivity bandpass filter comprises a dielectric substrate, a first metal stripe, a second metal stripe, a third metal stripe, a fourth metal stripe, a fifth metal stripe, a first bent branch knot, a second bent branch knot, a first input and output stripe and a second input and output stripe. The bottom face of the dielectric substrate is the ground plane of the filter. The fourth metal stripe is connected between the third metal stripe and the fifth metal stripe to form an I-shaped branch knot to constitute the dual-mode resonator. The first metal stripe is connected with the ground plane to form a first quarter wavelength short circuit resonator, and the second metal stripe is connected with the ground plane to form a second quarter wavelength short circuit resonator. The first bent branch knot is connected with the first metal stripe and the first input and output stripe respectively, and the second bent branch knot is connected with the second metal stripe and the second input and output stripe respectively. The filter is high in selective performance and suppression performance.
Description
Technical field
The present invention relates to a kind of high selectivity band pass filter based on I-shaped dual-mode resonator, be applicable to being applied to the mobile communication terminal of miniaturization.
Background technology
At present the achieved function of mobile communication terminal is more and more, as a handheld device is integrated with two kinds or above voice calling service mode of operation, can work in different frequencies, different systems communication system to meet user's user demand under different operators, different frequency range condition.Mobile communication terminal is not limited to single voice calling service already simultaneously, and the functions such as the broadband mobile businesss of networking such as image, video, music, ecommerce, web page browsing, electronic meeting and location navigation are opened more universal and more universal in mobile communication terminal.It is more and more serious that abundant communication pattern and communications band disturb the non-linear Lin of the causing road of active device in receive-transmit system, and this just has higher requirement to the selectivity of filter and Out-of-band rejection degree.Meanwhile, further dwindling of passive device size also ordered about in the miniaturization of mobile terminal.
Summary of the invention
Technical problem: technical problem to be solved by this invention is: a kind of high selectivity band pass filter based on I-shaped dual-mode resonator is provided, and this filter has high selectivity, highly inhibited feature.
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of high selectivity band pass filter based on I-shaped dual-mode resonator, this filter comprises dielectric substrate, and the first metal band, the second metal band, the 3rd metal band, the 4th metal band, the 5th metal band, the first crooked minor matters, the second crooked minor matters, the first input and output band and the second input and output band that are arranged on dielectric substrate end face; The bottom surface of dielectric substrate is the ground level of filter; The 3rd metal band and the 5th metal band are parallel to each other, and the 4th metal band is connected between the 3rd metal band and the 5th metal band, forms I-shaped minor matters, form dual-mode resonator; The first metal band and the second metal band are positioned at the both sides of I-shaped minor matters, and the first metal band and the second metal band be arranged in parallel with the 3rd metal band respectively, and the first metal band and the second metal band are coupled with the 3rd metal band respectively; The first metal band is provided with the first plated-through hole away from one end of the 3rd metal band, and the first metal band joins by the first plated-through hole and ground level, forms the first quarter-wave short circuit resonator; The second metal band is provided with the second plated-through hole away from one end of the 3rd metal band, and the second metal band joins by the second plated-through hole and ground level, forms the second quarter-wave short circuit resonator; One end of the first crooked minor matters and the first metal band join, and the other end of the first crooked minor matters is connected with the first input and output band; One end of the second crooked minor matters and the second metal band join, and the other end of the second crooked minor matters and the second input and output band join.
Further, the two ends of the 4th described metal band are connected to the center of the 5th metal band and the center of the 3rd metal band, and the 4th metal band is perpendicular to the 5th metal band.
Further, described the first crooked minor matters and the second crooked minor matters are all L-shaped, and the first crooked minor matters are connected to the middle part of the first metal band, and the second crooked minor matters are connected to the middle part of the second metal band.
Further, one side that the first described crooked minor matters are connected with the first metal band is perpendicular with the first metal band, and one side that the second crooked minor matters are connected with the second metal band is perpendicular with the second metal band.
beneficial effect:compared with prior art, the present invention has following beneficial effect:
(1) there is high selectivity, highly inhibited.The present invention, with the I-shaped dual-mode resonator of micro-band forms two the quarter-wave resonance devices that are coupled simultaneously, builds the microwave filter of quadravalence boxlike topological structure, can realize high adjacent band selectivity and high Out-of-band rejection degree simultaneously.This I-shaped dual-mode resonator comprises half-wavelength mode of resonance and the long mode of resonance of all-wave, and two kinds of pattern not couplings mutually, is applicable to being applied to other and adopts high-order boxlike topological structure.According to the strange mould resonance frequency of this I-shaped dual-mode resonator and even mould resonance frequency relative size, can adjust neatly the position of transmission zero, can be positioned at high resistant or low-resistance belt, suppress characteristic frequency.Present technique can realize and reach 18.5dB departing from filter passband edge 2.4% place's Out-of-band rejection degree, reaches 40dB departing from filter passband edge 4.8% place's Out-of-band rejection degree.
(2) stable performance.In filter of the present invention, be mixedly coupled I-shaped dual-mode resonator and quarter-wave resonance device, can increase the pass band width of filter.Or under identical pass band width requires, between coupled microstrip line, distance can be relaxed, reduce the impact of mismachining tolerance on filter characteristic, greatly increased the stability of product.
(3) compact conformation.The cross-coupled filter of traditional box structure is realized mainly with waveguide form, although this filter insertion loss is low, frequency selectivity good, 3 dimension structural limitations of its large volume in the use of mobile terminal.In filter of the present invention, the box structure that adopts I-shaped dual-mode resonator to realize, I-shaped dual-mode resonator is equivalent to two singlemode resonance devices, hybrid coupled quarter-wave resonance device, circuit size can dwindle half.
Accompanying drawing explanation
Fig. 1 is the Facad structure schematic diagram of embodiment in the present invention.
Fig. 2 is the reverse side structural representation of embodiment in the present invention.
Fig. 3 is the test result figure of embodiment transmission coefficient in the present invention.
Fig. 4 is the test result figure of embodiment echo coefficient in the present invention.
In figure, have: the first metal band 1, the second metal band 2, the 3rd metal band 3, the 4th metal band 4, the crooked minor matters 7 of the crooked minor matters 6, second of the 5th metal band 5, first, the first input and output band 8, the second input and output band 9, ground level 10, the first plated-through hole 11, the second plated-through hole 12.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is further described in detail.
As depicted in figs. 1 and 2, a kind of high selectivity band pass filter based on I-shaped dual-mode resonator of the present invention, comprise dielectric substrate, and the first metal band 1, the second metal band 2, the 3rd metal band 3, the 4th metal band 4, the crooked minor matters 7 of the crooked minor matters 6, second of the 5th metal band 5, first, the first input and output band 8 and the second input and output band 9 that are arranged on dielectric substrate end face.The bottom surface of dielectric substrate is the ground level 10 of filter.The 3rd metal band 3 and the 5th metal band 5 are parallel to each other, and the 4th metal band 4 is connected between the 3rd metal band 3 and the 5th metal band 5, forms I-shaped minor matters.The first metal band 1 and the second metal band 2 are positioned at the both sides of I-shaped minor matters, and the first metal band 1 and the second metal band 2 be arranged in parallel with the 3rd metal band 3 respectively, and the first metal band 1 and the second metal band 2 are coupled with the 3rd metal band 3 respectively.The first metal band 1 is provided with the first plated-through hole 11, the first metal bands 1 away from one end of the 3rd metal band 3 and joins by the first plated-through hole 11 and ground level 10, forms the first quarter-wave short circuit resonator.The second metal band 2 is provided with the second plated-through hole 12, the second metal bands 2 away from one end of the 3rd metal band 3 and joins by the second plated-through hole 12 and ground level 10, forms the second quarter-wave short circuit resonator.One end of the first crooked minor matters 6 and the first metal band 1 join, and the other end of the first crooked minor matters 6 is connected with the first input and output band 8.One end of the second crooked minor matters 7 and the second metal band 2 join, and the other end of the second crooked minor matters 7 and the second input and output band 9 join.As preferably, the first crooked minor matters 6 and the second crooked minor matters 7 are all L-shaped, and the first crooked minor matters 6 are connected to the middle part of the first metal band 1, and the second crooked minor matters 7 are connected to the middle part of the second metal band 2.
Further, the two ends of the 4th described metal band 4 are connected to the center of the 5th metal band 5 and the center of the 3rd metal band 3, and the 4th metal band 4 is perpendicular to the 5th metal band 5.The I-shaped bimodulus structure of this symmetry is easy to manufacture.
Further, one side that the first described crooked minor matters 6 are connected with the first metal band 1 is perpendicular with the first metal band 1, and one side that the second crooked minor matters 7 are connected with the second metal band 2 is perpendicular with the second metal band 2.
In the filter of said structure, the first metal band 1 is all parallel with the 3rd metal band 3 in I-shaped minor matters with the second metal band 2, and respectively at a side and the 3rd metal band 3 parallel couplings of the 3rd metal band 3.The first metal band 1 and the second metal band 2 join with ground level 10 by the first plated-through hole 11 and the second plated-through hole 12 in the one end away from the 3rd metal band 3 respectively, form two quarter-wave resonance devices.The 5th metal band 5 is vertically connected on the center of the 5th metal band 5 and the center of the 3rd metal band 3 with the parallel placement of the 3rd metal band 3, the 4th metal band 4, forms I-shaped dual-mode resonator.This I-shaped dual-mode resonator is considered as being comprised of half-wave resonator and full wave resonance.According to the strange mould resonance frequency of this I-shaped dual-mode resonator and even mould resonance frequency relative size, in high stopband or a transmission zero of low-resistance belt place generation, suppress particular frequencies, improve filter selectivity.This transmission zero can be placed on low-resistance belt, also can be placed on high stopband.Length by the 3rd metal band 3 and the 4th metal band 4 changes, and strengthens the selectivity of a certain side of passband.In addition, two of I-shaped dual-mode resonator kinds of resonance frequencys can regulate neatly.Between two kinds of modes of resonance, mutually not coupling, is suitable for some special cross-couplings topological structure, and box structure is for example realized the band pass filter of high selectivity, high inhibition degree.The strange mould resonance of I-shaped dual-mode resonator and even mould resonance, and two quarter-wave resonance patterns of first metal band 1 and the second metal band 2, four limits that jointly formed the filter of quadravalence boxlike topological structure, not only dwindle circuit size, and two modes of resonance do not exist coupling, be therefore particularly suitable for for constructing the cross-coupled filter of boxlike topological structure.Because the electric admittance slope of electric admittance slope ratio 1/2nd wavelength of two quarter-wave resonance devices itself and full wave resonator is all little, under identical coupling amount requires, two quarter-wave resonance devices and I-shaped dual-mode resonator can be realized wider pass band width.The first crooked minor matters 6 and second crooked minor matters 7 one end intersect vertically with the first metal band 1 and the second metal band 2 broadsides respectively, form input and output coupled structure, and its electrical length is about quarter-wave.The coupling amount of input and output can regulate by length and the width of the first crooked minor matters 6 and the second crooked minor matters 7.The other end of the first crooked minor matters 6 and the second crooked minor matters 7 is connected with the first input and output band 8, the second input and output band 9 respectively, and the first input and output band 8, the second input and output band 9 are source impedance and load impedance.
Exemplify an embodiment below.
As depicted in figs. 1 and 2, a kind of high selectivity band pass filter based on I-shaped dual-mode resonator, at the end face of dielectric substrate, the first metal band 1 and the parallel placement on same axis of the second metal band 2.The width of the first metal band 1 and the second metal band 2 equates, is designated as W1.W1 chooses according to dielectric substrate parameter (sheet metal thickness H and sheet material relative dielectric constant Er), makes the first metal band 1 and the second metal band 2 maximum in quarter-wave strong point resonance quality factor.The first metal band 1 and the second metal band 2 equal in length, is designated as L1.Regulate L1, the centre frequency that the resonance frequency that makes the first metal band 1 and the second metal band 2 is filter.Set up coordinate system, its axis 0y is vertical with axis 0x.It is upper that the first plated-through hole 11, the second plated-through hole 12 are placed in axes O x, and be placed on the far-end of the first metal band 1 and the second metal band 2, for being connected with ground level 10.The 4th metal band 4 is placed on the axes O y vertical with axle Ox.The central point of the central point of the 3rd metal band 3 and the 5th metal band 5 is connected with the 4th metal band 4 two ends.The 3rd metal band 3 and the 5th metal band 5 Ox that parallels to the axis.Choose similarly to the physical size of the first metal band 1, the second metal band 2, the width W 2 of the 3rd metal band 3 has determined its resonance quality factor, and the length L 2 of the 3rd metal band 3 is chosen the resonance frequency that depends on the strange mould of dual-mode resonator.The coupling coefficient of the first metal band 1 and the 3rd metal band 3 is determined by both coupling distance L13 and coupling width S.Further, adjust length L 3 and the width W 3 of the 4th metal band 4, and the length of the 5th metal band 5 (2*L4+W3) and width W 4, to obtain the required even mould resonance frequency of filter synthesis.L4 represents the distance of end to the four metal bands 4 of the 5th metal band 5.In addition, the physical size of the 4th metal band 4 and the 5th metal band 5 chooses the coupling coefficient that also will consider between the first metal band 1 mode of resonance and even mould mode of resonance.One end of the first crooked minor matters 6 is with first metal band 1 is vertical is connected, and one end of the second crooked minor matters 7 is with second metal band 2 is vertical is connected.The width of the width of the first crooked minor matters 6 and the second crooked minor matters 7 equates, is designated as W5.The distance of the first crooked minor matters 6 to first plated-through holes 11 equates with the distance of the second crooked minor matters 7 to second plated-through holes 12, is designated as L7.Adjust W5 and L7, obtain required input and output coupling coefficient.The bending structure of the first crooked minor matters 6 and the second crooked minor matters 7 can further reduce circuit size.
The total length of the total length of the first crooked minor matters 6 and the second crooked minor matters 7 is L5+L6, and equaling filter center frequency place, to meet electrical length be quarter-wave, is equivalent to desirable admittance inverter.The first crooked minor matters 6 and the second crooked minor matters 7 are preferably L shaped, and the total length of the first crooked minor matters 6 is identical with the shape of the second crooked minor matters 7.L5 represents the first crooked minor matters 6 length on one side, and L6 represents the length of the first crooked minor matters 6 another sides.The value of this converter equals the feature admittance value of the first crooked minor matters 6 and the second crooked minor matters 7.
In embodiment, used medium substrate is Rogers5880, thickness H=0.254mm, and relative dielectric constant Er=2.2, lists in table 1 by the structural parameters size of the embodiment of the structure fabrication shown in Fig. 1 and Fig. 2.
The exemplary design parameters size table of table 1 embodiment
Fig. 3 and Fig. 4 record by dual-port vector network analyzer.Fig. 3 is the test result of transmission coefficient S21 in S parameter under this embodiment.Result shows: the band connection frequency of the filter of this embodiment is 8.2GHz-9.1GHz, and insertion loss is less, between 1.8dB-2.8dB.Introducing due to transmission zero, depart from passband edge 0.2GHz place (being 8.2GHz) selectivity and increase rapidly, inhibition degree is better than 18.5dB, and 7.5GHz below degree of inhibition is better than 41 dB, 6GHz below degree of inhibition is better than 60 dB, and 4GHz below degree of inhibition is better than 75 dB.Low-resistance belt place selectivity and the Out-of-band rejection of visible this embodiment band pass filter are very excellent.Fig. 4 is the test result of echo coefficient S 11 in S parameter under this embodiment.In free transmission range, return loss is all better than 11dB, meets the requirement of radio-frequency devices to standing wave.Circuit overall dimensions is only 36mm*10mm, is applicable to compact apparatus and uses.
Claims (4)
1. the high selectivity band pass filter based on I-shaped dual-mode resonator, it is characterized in that, this filter comprises dielectric substrate, and the first metal band (1), the second metal band (2), the 3rd metal band (3), the 4th metal band (4), the 5th metal band (5), the first crooked minor matters (6), the second crooked minor matters (7), the first input and output band (8) and the second input and output band (9) that are arranged on dielectric substrate end face; The bottom surface of dielectric substrate is the ground level (10) of filter; The 3rd metal band (3) and the 5th metal band (5) are parallel to each other, and the 4th metal band (4) is connected between the 3rd metal band (3) and the 5th metal band (5), forms I-shaped minor matters, form dual-mode resonator; The first metal band (1) and the second metal band (2) are positioned at the both sides of I-shaped minor matters, the first metal band (1) and the second metal band (2) be arranged in parallel with the 3rd metal band (3) respectively, and the first metal band (1) and the second metal band (2) are coupled with the 3rd metal band (3) respectively; The first metal band (1) is provided with the first plated-through hole (11) away from one end of the 3rd metal band (3), the first metal band (1) joins by the first plated-through hole (11) and ground level (10), forms the first quarter-wave short circuit resonator; The second metal band (2) is provided with the second plated-through hole (12) away from one end of the 3rd metal band (3), the second metal band (2) joins by the second plated-through hole (12) and ground level (10), forms the second quarter-wave short circuit resonator; One end of the first crooked minor matters (6) and the first metal band (1) join, and the other end of the first crooked minor matters (6) is connected with the first input and output band (8); One end of the second crooked minor matters (7) and the second metal band (2) join, and the other end of the second crooked minor matters (7) and the second input and output band (9) join.
2. according to the high selectivity band pass filter based on I-shaped dual-mode resonator claimed in claim 1, it is characterized in that, the two ends of the 4th described metal band (4) are connected to the center of the 5th metal band (5) and the center of the 3rd metal band (3), and the 4th metal band (4) is perpendicular to the 5th metal band (5).
3. according to the high selectivity band pass filter based on I-shaped dual-mode resonator described in claim 1 or 2, it is characterized in that, described the first crooked minor matters (6) and the second crooked minor matters (7) are all L-shaped, and the first crooked minor matters (6) are connected to the middle part of the first metal band (1), the second crooked minor matters (7) are connected to the middle part of the second metal band (2).
4. according to the high selectivity band pass filter based on I-shaped dual-mode resonator claimed in claim 3, it is characterized in that, one side that the first described crooked minor matters (6) are connected with the first metal band (1) is perpendicular with the first metal band (1), and one side that the second crooked minor matters (7) are connected with the second metal band (2) is perpendicular with the second metal band (2).
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| CN105609906A (en) * | 2015-11-10 | 2016-05-25 | 东南大学 | Band pass filter based on second order mixed resonator |
| CN105720333A (en) * | 2016-01-28 | 2016-06-29 | 华为技术有限公司 | Filter |
| CN105742774A (en) * | 2016-03-31 | 2016-07-06 | 国鹰航空科技有限公司 | X-waveband narrow-band band-pass filter |
| CN107681235A (en) * | 2017-10-10 | 2018-02-09 | 成都大学 | A kind of compact-sized ultra wide band bandpass filter |
| CN110459846A (en) * | 2019-07-17 | 2019-11-15 | 安徽蓝讯电子科技有限公司 | A kind of waveguide filter of the high degree of suppression of broadband |
| CN113225039A (en) * | 2021-04-25 | 2021-08-06 | 哈尔滨工程大学 | Robust resonator based on topological insulator |
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| CN105609906B (en) * | 2015-11-10 | 2018-02-06 | 东南大学 | Bandpass filter based on second order hybrid resonant device |
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| CN107681235A (en) * | 2017-10-10 | 2018-02-09 | 成都大学 | A kind of compact-sized ultra wide band bandpass filter |
| CN110459846A (en) * | 2019-07-17 | 2019-11-15 | 安徽蓝讯电子科技有限公司 | A kind of waveguide filter of the high degree of suppression of broadband |
| CN110459846B (en) * | 2019-07-17 | 2020-12-04 | 安徽蓝讯电子科技有限公司 | Broadband high-suppression waveguide filter |
| CN113225039A (en) * | 2021-04-25 | 2021-08-06 | 哈尔滨工程大学 | Robust resonator based on topological insulator |
| CN113225039B (en) * | 2021-04-25 | 2022-02-11 | 哈尔滨工程大学 | Robust resonator based on topological insulator |
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