CN103579517A - Top emission organic light-emitting device and preparation method thereof - Google Patents

Top emission organic light-emitting device and preparation method thereof Download PDF

Info

Publication number
CN103579517A
CN103579517A CN201210264200.9A CN201210264200A CN103579517A CN 103579517 A CN103579517 A CN 103579517A CN 201210264200 A CN201210264200 A CN 201210264200A CN 103579517 A CN103579517 A CN 103579517A
Authority
CN
China
Prior art keywords
layer
thickness
hole
top radiation
hole transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210264200.9A
Other languages
Chinese (zh)
Inventor
周明杰
王平
黄辉
张振华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Original Assignee
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd, Shenzhen Oceans King Lighting Engineering Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN201210264200.9A priority Critical patent/CN103579517A/en
Publication of CN103579517A publication Critical patent/CN103579517A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene

Abstract

The invention belongs to the field of organic semiconductor materials and discloses a top emission organic light-emitting device and a preparation method thereof. The device comprises glass, a positive pole layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a negative pole layer which are stacked in sequence. The hole transport layer is made of a mixed doped material formed by doping a doped material to a hole transport material according to the mass ratio of 0.1:1-1:1. According to the top emission organic light-emitting device, the material of the hole transport layer is the mixed doped material formed by doping a polymer serving as the doped material to the hole transport material, the mixed doped material forms a crystal-shaped film easily, the film enables light going out through two sides to return the top end of the negative pole layer by positive pole layer reflection, and accordingly luminous efficiency of the device is reinforced.

Description

Top radiation organic EL part and preparation method thereof
Technical field
The present invention relates to organic semiconducting materials, relate in particular to a kind of top radiation organic EL part and preparation method thereof.
Background technology
The C.W.Tang of 1987 Nian， U.S. Eastman Kodak companies and VanSlyke have reported the breakthrough in organic electroluminescent research.Utilize ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m 2, its luminous efficiency is 1.51 lm/W, life-span to be greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
In traditional luminescent device, the light of device inside only has 18% left and right can be transmitted into outside to go, and that other part can consume at device with other forms is outside, (as the specific refractivity between glass and ITO, glass refraction is 1.5 between interface, refractive index poor, ITO is 1.8, light arrives glass from ITO, and total reflection will occur), caused the loss of total reflection, thereby it is lower to cause integral body to go out optical property, the luminous efficiency of device is low.
Summary of the invention
The top radiation organic EL part that provides a kind of luminous efficiency high is provided problem to be solved by this invention.
, comprise the glass, anode layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the negative electrode utmost point layer that stack gradually; The material of described hole transmission layer is that the ratio that dopant material is 0.1:1-1:1 according to mass ratio is doped to the mixing and doping material forming in hole mobile material, described dopant material for poly-to styrene support, poly-[2-methoxyl group-5(2 '-ethyl hexyl oxy) to phenylacetylene], poly-3,4-dioxoethyl thiophene or polyphenyl sulfonic acid, described hole mobile material is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine or N; N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine; The thickness of described hole transmission layer is 5-80nm.
Described top radiation organic EL part, wherein, the material of described anode layer is silver, aluminium, platinum or gold; The thickness of this anode layer is 80-250nm.
Described top radiation organic EL part, wherein, the material of described hole injection layer is molybdenum trioxide, tungstic acid or vanadic oxide; The thickness of described hole injection layer is 20-80nm.
Described top radiation organic EL part, wherein, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl or oxine aluminium; The thickness of described luminescent layer is 5-40nm.
Described top radiation organic EL part, wherein, the material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole; The thickness of described electron transfer layer is 40-100nm.
Described top radiation organic EL part, wherein, the material of described electron injecting layer is cesium carbonate, cesium fluoride, nitrine caesium or lithium fluoride; The thickness of described electron injecting layer is 0.5-10nm.
Described top radiation organic EL part, wherein, the material of described cathode layer is silver, aluminium, platinum or gold; The thickness of described cathode layer is 5-20nm.
The present invention also provides the preparation method of above-mentioned top radiation organic EL part, comprises the steps:
S1, first glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, removes the organic pollution of glass surface;
S2, at clean glass surface, prepare anode layer, then antianode layer carries out photoetching treatment; Subsequently at anode layer surface evaporation hole injection layer;
S3, employing spin coating proceeding, prepare hole transmission layer on hole injection layer surface: first, the ratio that is 0.1:1-1:1 according to mass ratio by dopant material is doped to the mixing and doping material forming in hole mobile material; Secondly, mixing and doping material is joined in solvent, being configured to concentration is the spin coating solution of 2 ~ 30mg/ml; Then, hole injection layer surface will be coated in spin coating solution, and the thickness of controlling hole transmission layer is 5 ~ 80nm; Finally, annealing in process at 50 ~ 200 ℃, makes hole transmission layer; Wherein, described dopant material for poly-to styrene support, poly-[2-methoxyl group-5(2 '-ethyl hexyl oxy) to phenylacetylene], poly-3,4-dioxoethyl thiophene or polyphenyl sulfonic acid, described hole mobile material is 1,1-, bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine or N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine; Described solvent is chlorobenzene, chloroform, toluene or paraxylene;
S4, on hole transmission layer surface, stack gradually evaporation luminescent layer, electron transfer layer, electron injecting layer and cathode layer;
Finally, after above-mentioned processing step completes, make top radiation organic EL part.
In above-mentioned preparation technology, the evaporation of step S3 and S4 is vacuum thermal resistance evaporation, and pressure is 2 * 10 -3-2 * 10 -5pa.
Top radiation organic EL part provided by the invention, bottom anode has been used metal material, these materials are under enough thick prerequisite, to reflect light, make the light that is transmitted into bottom can reflex to top, and the electrode at top is in enough thin, to there is very high transmitance, the light that incides top can be shone in air smoothly, glass and the organic layer interface that just can effectively avoid originally the light through bottom outgoing to cause, the loss of glass and Air Interface, and hole transmission layer, the preparation of employing spin coating method, and the material of hole transmission layer is for adopting polymer to be doped to composition doping composite material in hole mobile material as dopant material, the easy crystallization of this doping composite material, form crystalloid film, this film can improve the order that segment is arranged, can strengthen the rigidity of segment, while making light be transmitted into hole transmission layer one side, obtain obvious scattering simultaneously, and the light that hole transmission layer can make both sides go out concentrates on middle part, then through anode layer, reflect back into cathode layer top, thereby strengthened the light extraction efficiency of device, reach the object that luminous efficiency is provided.
Accompanying drawing explanation
Fig. 1 is the structural representation of the top radiation organic EL part that makes of the present invention;
Fig. 2 is voltage and the brightness relationship figure of the organic electroluminescence device that makes of the top radiation organic EL part that makes of embodiment 1 and comparative example 1; Wherein, curve 1 represents voltage and the brightness curve of the top radiation organic EL part that embodiment 1 makes; Curve 2 represents voltage and the brightness curve of the organic electroluminescence device that comparative example 1 makes.
Embodiment
A kind of top radiation organic EL part provided by the invention, as shown in Figure 1, comprise glass 101, anode layer 102, hole injection layer 103, hole transmission layer 104, luminescent layer 105, electron transfer layer 106, electron injecting layer 107 and the cathode layer 108 stacking gradually; Wherein, the material of described hole transmission layer is that the ratio that dopant material is 0.1:1-1:1 according to mass ratio is doped to the mixing and doping material forming in hole mobile material, described dopant material for poly-to styrene support (MDMO-PPV), poly-[2-methoxyl group-5(2 '-ethyl hexyl oxy) to phenylacetylene] (MEH-PPV), poly-3,4-dioxoethyl thiophene (PEDOT) or polyphenyl sulfonic acid (PSS); Described hole mobile material is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine (NPB); The thickness of described hole transmission layer is 5-80nm.
In above-mentioned top radiation organic EL part, material and the thickness of other functional layer are as follows:
Glass 101 is commercially available simple glass;
The material of anode layer 102 is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), is preferably Ag; The thickness of anode layer 102 is 80-250nm, and preferred thickness is 200nm;
The material of hole injection layer 103 is molybdenum trioxide (MoO 3), tungstic acid (WO 3) or vanadic oxide (V 2o 5), be preferably MoO 3; The thickness of hole injection layer 103 is 20-80nm, and preferred thickness is 40nm;
The material of luminescent layer 105 is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq3), be preferably Alq3; The thickness of luminescent layer 105 is 5-40nm, and preferred thickness is 15nm;
The material of electron transfer layer 106 is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBi), be preferably TPBi; The thickness of electron transfer layer 106 is 40-100nm, and preferred thickness is 60n;
The material of electron injecting layer 107 is cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) or lithium fluoride (LiF), be preferably LiF; The thickness of electron injecting layer 107 is 0.5-10nm, and preferred thickness is 0.7nm;
The material of cathode layer 108 is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), is preferably Ag; The thickness of cathode layer 108 is 5-20nm, and preferred thickness is 10nm.
Top radiation organic EL part provided by the invention, its hole transmission layer, adopts spin coating method preparation, and the material of hole transmission layer is for adopting polymer to be doped to composition doping composite material in hole mobile material as dopant material; The easy crystallization of this doping composite material, form crystalloid film, this film can improve the order that segment is arranged, while making light be transmitted into hole transmission layer one side, obtain obvious scattering, and the light that hole transmission layer can make both sides go out concentrates on middle part, then through anode layer, reflect back into cathode layer top, thereby strengthened the light extraction efficiency of device, reached the object that luminous efficiency is provided.
The preparation method of above-mentioned top radiation organic EL part, comprises the steps:
S1, first glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, removes the organic pollution of glass surface;
S2, at clean glass surface, prepare anode layer, then antianode layer carries out photoetching treatment; Subsequently at anode layer surface evaporation hole injection layer;
S3, employing spin coating proceeding, on hole injection layer surface, prepare hole transmission layer:
First, the ratio that is 0.1:1-1:1 by dopant material according to mass ratio is doped to the mixing and doping material forming in hole mobile material;
Secondly, mixing and doping material is joined in solvent, being configured to concentration is the spin coating solution of 2 ~ 30mg/ml;
Then, hole injection layer surface will be coated in spin coating solution, and the thickness of controlling hole transmission layer is 5 ~ 80nm;
Finally, annealing in process at 50 ~ 200 ℃, makes hole transmission layer;
Wherein, described dopant material for poly-to styrene support (MDMO-PPV), poly-[2-methoxyl group-5(2 '-ethyl hexyl oxy) to phenylacetylene] (MEH-PPV), poly-3,4-dioxoethyl thiophene (PEDOT) or polyphenyl sulfonic acid (PSS); Described hole mobile material is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine (NPB); Described solvent is chlorobenzene, chloroform, toluene or paraxylene;
S4, on hole transmission layer surface, stack gradually evaporation luminescent layer, electron transfer layer, electron injecting layer and cathode layer;
Finally, after above-mentioned processing step completes, make top radiation organic EL part.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Following embodiment and comparative example, when preparation and test, instrument used is: high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure <1 * 10 -32602), electroluminescent spectrum tester (U.S. photo research company, model: PR650) and screen intensity meter (Beijing Normal University, model: ST-86LA) Pa), current-voltage tester (U.S. Keithly company, model:.
Embodiment 1
1, glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, the organic pollution of removal glass surface
2, cleaning glass surface evaporation anode layer later, material is Ag, and thickness is 200nm; Then antianode layer carries out photoetching treatment, is cut into needed size, and at anode layer surface evaporation hole injection layer, material is MoO subsequently 3, thickness is 40nm.
3, at hole injection layer surface spin coating hole transmission layer: first-selection, dopant material MEH-PPV joins (mass ratio of MEH-PPV and TCTA is 0.5:1) in hole mobile material TCTA, forms doping composite material, is expressed as MEH-PPV:TCTA; Subsequently, doping composite material is added in chlorobenzene solvent, forming concentration is 15mg/ml mixed solution; Finally, mixed solution is spin-coated on to hole injection layer surface, and to control thickness be 60nm, and then, at 100 ℃ of annealing in process 15min, make hole transmission layer;
4, on hole transmission layer surface, stack gradually evaporation luminescent layer, material is Alq 3, thickness is 15nm; Electron transfer layer, material are TPBi, and thickness is 60nm; Electron injecting layer, material is LiF, thickness is 0.7nm; Cathode layer, material is Ag, thickness is 10nm;
After above-mentioned technique completes, make top radiation organic EL part, its structure is: glass/Ag/MoO 3/ MEH-PPV:TCTA/Alq 3/ TPBi/LiF/Ag.
Embodiment 2
1, glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, the organic pollution of removal glass surface
2, cleaning glass surface evaporation anode layer later, material is Al, and thickness is 250nm; Then antianode layer carries out photoetching treatment, is cut into needed size, and at anode layer surface evaporation hole injection layer, material is MoO subsequently 3, thickness is 20nm.
3, at hole injection layer surface spin coating hole transmission layer: first-selection, dopant material MDMO-PPV joins (mass ratio of MDMO-PPV and NPB is 1:1) in hole mobile material NPB, forms doping composite material, is expressed as MDMO-PPV:NPB; Subsequently, doping composite material is added in chloroform solvent, forming concentration is 25mg/ml mixed solution; Finally, mixed solution is spin-coated on to hole injection layer surface, and to control thickness be 80nm, and then, at 200 ℃ of annealing in process 5min, make hole transmission layer;
4, on hole transmission layer surface, stack gradually evaporation luminescent layer, material is BCzVBi, thickness is 40nm; Electron transfer layer, material are TAZ, and thickness is 100nm; Electron injecting layer, material is CsF, thickness is 5nm; Cathode layer, material is Pt, thickness is 5nm;
After above-mentioned technique completes, make top radiation organic EL part, its structure is: glass/Al/WO 3/ MDMO-PPV:NPB/BCzVBi/TAZ/CsF/Pt.
Embodiment 3
1, glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, the organic pollution of removal glass surface
2, cleaning glass surface evaporation anode layer later, material is Au, and thickness is 80nm; Then antianode layer carries out photoetching treatment, is cut into needed size, and at anode layer surface evaporation hole injection layer, material is V subsequently 2o 5, thickness is 80nm.
3, at hole injection layer surface spin coating hole transmission layer: first-selection, dopant material PSS joins (mass ratio of PSS and TAPC is 0.1:1) in hole mobile material TAPC, forms doping composite material, is expressed as PSS:TAPC; Subsequently, doping composite material is added in toluene solvant, forming concentration is 2mg/ml mixed solution; Finally, mixed solution is spin-coated on to hole injection layer surface, and to control thickness be 5nm, and then, at 50 ℃ of annealing in process 30min, make hole transmission layer;
4, on hole transmission layer surface, stack gradually evaporation luminescent layer, material is ADN, thickness is 5nm; Electron transfer layer, material are Bphen, and thickness is 40nm; Electron injecting layer, material is CsN3, thickness is 10nm; Cathode layer, material is Au, thickness is 20nm;
After above-mentioned technique completes, make top radiation organic EL part, its structure is: glass/Au/V 2o 5/ PSS:TAPC/ADN/Bphen/CsN 3/ Au.
Embodiment 4
1, glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, the organic pollution of removal glass surface
2, cleaning glass surface evaporation anode layer later, material is Pt, and thickness is 100nm; Then antianode layer carries out photoetching treatment, is cut into needed size, and at anode layer surface evaporation hole injection layer, material is V subsequently 2o 5, thickness is 50nm.
3, at hole injection layer surface spin coating hole transmission layer: first-selection, dopant material PEDOT joins (mass ratio of PEDOT and NPB is 0.7:1) in hole mobile material NPB, forms doping composite material, is expressed as PEDOT:NPB; Subsequently, doping composite material is added in paraxylene solvent, forming concentration is 30mg/ml mixed solution; Finally, mixed solution is spin-coated on to hole injection layer surface, and to control thickness be 70nm, and then, at 150 ℃ of annealing in process 5min, make hole transmission layer;
4, on hole transmission layer surface, stack gradually evaporation luminescent layer, material is DCJTB, thickness is 10nm; Electron transfer layer, material are TPBi, and thickness is 65nm; Electron injecting layer, material is Cs 2cO 3, thickness is 0.5nm; Cathode layer, material is Al, thickness is 15nm;
After above-mentioned technique completes, make top radiation organic EL part, its structure is: glass/Pt/V 2o 5/ PEDOT:NPB/DCJTB/TPBi/Cs 2cO 3/ Al.
Comparative example 1
1, by ITO(tin indium oxide, as conductive anode layer) glass uses liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, removes the organic pollution on ito glass surface
2, on the ITO layer surface of cleaning ito glass later, stack gradually evaporation hole injection layer, material is MoO 3, thickness is 40nm.Hole mobile material layer, material is TCTA, thickness is 50nm;
3, on hole transmission layer surface, stack gradually evaporation luminescent layer, material is Alq 3, thickness is 15nm; Electron transfer layer, material is TPBi, thickness is 60nm; Electron injecting layer, material is LiF, thickness is 0.7nm; Cathode layer, material is Ag, thickness is 100nm;
Finally make organic electroluminescence device, its structure is: glass/ITO/MoO 3/ TCTA/Alq 3/ TPBi//LiF/Ag
Fig. 2 is voltage and the brightness relationship figure of the organic electroluminescence device that makes of the top radiation organic EL part that makes of embodiment 1 and comparative example 1; Wherein, curve 1 represents voltage and the brightness curve of the top radiation organic EL part that embodiment 1 makes; Curve 2 represents voltage and the brightness curve of the organic electroluminescence device that comparative example 1 makes.
From Fig. 2, can see, under different voltage, the organic electroluminescence device that the brightness of the top radiation organic EL part that embodiment 1 makes all makes than comparative example 1 is large, and when 10V, the brightness of embodiment 1 is 26692cd/m 2, and that comparative example is only 17063cd/m 2; This all illustrates, top radiation organic EL part, and hole transmission layer, adopts spin coating method preparation, and the material of hole transmission layer is for adopting polymer to be doped to composition doping composite material in hole mobile material as dopant material; The easy crystallization of this doping composite material, form crystalloid film, this film can improve the order that segment is arranged, while making light be transmitted into hole transmission layer one side, obtain obvious scattering, and the light that hole transmission layer can make both sides go out concentrates on middle part, then through anode layer, reflect back into cathode layer top, thereby strengthened the light extraction efficiency of device, reached the object that luminous efficiency is provided.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.

Claims (8)

1. a top radiation organic EL part, is characterized in that, comprises the glass, anode layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the negative electrode utmost point layer that stack gradually; The material of described hole transmission layer is that the ratio that dopant material is 0.1:1-1:1 according to mass ratio is doped to the mixing and doping material forming in hole mobile material, described dopant material for poly-to styrene support, poly-[2-methoxyl group-5(2 '-ethyl hexyl oxy) to phenylacetylene], poly-3,4-dioxoethyl thiophene or polyphenyl sulfonic acid, described hole mobile material is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine or N; N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine; The thickness of described hole transmission layer is 5-80nm.
2. top radiation organic EL part according to claim 1, is characterized in that, the material of described anode layer is silver, aluminium, platinum or gold; The thickness of this anode layer is 80-250nm.
3. top radiation organic EL part according to claim 1, is characterized in that, the material of described hole injection layer is molybdenum trioxide, tungstic acid or vanadic oxide; The thickness of described hole injection layer is 20-80nm.
4. top radiation organic EL part according to claim 1, it is characterized in that, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl or oxine aluminium; The thickness of described luminescent layer is 5-40nm.
5. top radiation organic EL part according to claim 1, is characterized in that, the material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole; The thickness of described electron transfer layer is 40-100nm.
6. top radiation organic EL part according to claim 1, is characterized in that, the material of described electron injecting layer is cesium carbonate, cesium fluoride, nitrine caesium or lithium fluoride; The thickness of described electron injecting layer is 0.5-10nm.
7. top radiation organic EL part according to claim 1, is characterized in that, the material of described cathode layer is silver, aluminium, platinum or gold; The thickness of described cathode layer is 5-20nm.
8. the preparation method of top radiation organic EL part as claimed in claim 1, is characterized in that, comprises the steps:
S1, first glass is used to liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min that respectively cleans of isopropyl alcohol, removes the organic pollution of glass surface;
S2, at clean glass surface, prepare anode layer, then antianode layer carries out photoetching treatment; Subsequently at anode layer surface evaporation hole injection layer;
S3, employing spin coating proceeding, prepare hole transmission layer on hole injection layer surface: first, the ratio that is 0.1:1-1:1 according to mass ratio by dopant material is doped to the mixing and doping material forming in hole mobile material; Secondly, mixing and doping material is joined in solvent, being configured to concentration is the spin coating solution of 2 ~ 30mg/ml; Then, hole injection layer surface will be coated in spin coating solution, and the thickness of controlling hole transmission layer is 5 ~ 80nm; Finally, annealing in process at 50 ~ 200 ℃, makes hole transmission layer; Wherein, described dopant material for poly-to styrene support, poly-[2-methoxyl group-5(2 '-ethyl hexyl oxy) to phenylacetylene], poly-3,4-dioxoethyl thiophene or polyphenyl sulfonic acid, described hole mobile material is 1,1-, bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine or N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine; Described solvent is chlorobenzene, chloroform, toluene or paraxylene;
S4, on hole transmission layer surface, stack gradually evaporation luminescent layer, electron transfer layer, electron injecting layer and cathode layer;
Finally, after above-mentioned processing step completes, make top radiation organic EL part.
CN201210264200.9A 2012-07-27 2012-07-27 Top emission organic light-emitting device and preparation method thereof Pending CN103579517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210264200.9A CN103579517A (en) 2012-07-27 2012-07-27 Top emission organic light-emitting device and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210264200.9A CN103579517A (en) 2012-07-27 2012-07-27 Top emission organic light-emitting device and preparation method thereof

Publications (1)

Publication Number Publication Date
CN103579517A true CN103579517A (en) 2014-02-12

Family

ID=50050855

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210264200.9A Pending CN103579517A (en) 2012-07-27 2012-07-27 Top emission organic light-emitting device and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103579517A (en)

Similar Documents

Publication Publication Date Title
CN104037328A (en) Organic light emitting diode and preparation method thereof
CN103579526A (en) Organic electroluminescence device and manufacturing method thereof
CN102983287A (en) Organic electroluminescence device and manufacturing method thereof
CN104183778A (en) Organic electroluminescent device and preparation method thereof
CN104037344A (en) Stacked organic light emitting device and preparation method thereof
CN103972420A (en) Organic light-emitting device and method for manufacturing same
CN103579516A (en) Inverted bottom-emitting organic electroluminescence device and manufacturing method thereof
CN104051641A (en) Laminated organic electroluminescent device and manufacturing method thereof
CN104051642A (en) Laminated organic electroluminescent device and manufacturing method thereof
CN104518145A (en) Organic electroluminescent device and method for preparing same
CN104347801A (en) Organic electroluminescence appliance and preparing method of organic electroluminescence appliance
CN103682128A (en) Organic light-emitting device and preparation method thereof
CN103972408A (en) Organic light-emitting device and method for manufacturing same
CN103579517A (en) Top emission organic light-emitting device and preparation method thereof
CN103682125A (en) Organic light-emitting device and preparation method thereof
CN103928636A (en) Organic electroluminescence device and manufacturing method thereof
CN103456898A (en) Top-emitting organic electroluminescent device and producing method thereof
CN103579527A (en) Organic light-emitting device and preparation method thereof
CN103579511A (en) Inverted top-emitting organic electroluminescence device and manufacturing method thereof
CN104051662A (en) Composite anode and manufacturing method thereof, and organic electroluminescent device and manufacturing method thereof
CN104425745A (en) Organic electroluminescent device and preparation method thereof
CN104518106A (en) Organic light-emitting device and making method thereof
CN104425723A (en) Organic electroluminescent device and preparation method thereof
CN104037345A (en) Organic light emitting diode and preparation method thereof
CN104037346A (en) Organic light emitting diode and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140212