CN103579408A - Manufacturing method of BIPV film photovoltaic assembly - Google Patents
Manufacturing method of BIPV film photovoltaic assembly Download PDFInfo
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- CN103579408A CN103579408A CN201210266216.3A CN201210266216A CN103579408A CN 103579408 A CN103579408 A CN 103579408A CN 201210266216 A CN201210266216 A CN 201210266216A CN 103579408 A CN103579408 A CN 103579408A
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- 238000013084 building-integrated photovoltaic technology Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000012528 membrane Substances 0.000 claims description 87
- 210000001142 back Anatomy 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 9
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 32
- 239000010409 thin film Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000004035 construction material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a manufacturing method of a BIPV film photovoltaic assembly. The manufacturing method includes the steps of providing a conventional film photovoltaic assembly which comprises a plurality of strip-shaped film photovoltaic cells and processing the conventional film photovoltaic assembly by means of a laser reticle process to form light-transmitting belts which are more than 0.3mm wide. Due to the fact that the width of the light-transmitting belt is increased, compared with an existing BIPV film photovoltaic assembly which has the same size and same transmittance, the BIPV film photovoltaic assembly has less light-transmitting belts; when the light-transmitting belts are manufactured, influences on film semiconductor layers on the boundaries of the light-transmitting belts are correspondingly reduced, and accordingly the output power of the BIPV film photovoltaic assembly is improved. Besides, due to increase of the width of a non-light-transmitting portion, namely a sub assembly, influences of defects on the output power are greatly reduced.
Description
Technical field:
The present invention relates to solar cell manufacturing technology field, relate in particular to a kind of manufacture method of BIPV membrane photovoltaic component.
Background technology:
BIPV (Building Integrated Photovoltaics, BIPV) technology is integrated in photovoltaic module architectural, makes it not only to possess electricity generate function, also as construction material, uses simultaneously.Especially as the membrane photovoltaic component of daylighting photovoltaic module, it should meet and is integrated into architectural requirement, possesses again certain light transmission.
As shown in Figure 1, conventional membrane photovoltaic component comprises the some film photovoltaic cells 11 that are arranged on a substrate 10, described some film photovoltaic cells 11 are realized series connection by interior integrated method, at film photovoltaic cell 11 places that are positioned at two ends, be respectively provided with an electrode (the first electrode 10a and the second electrode 10b) respectively as the both positive and negative polarity of assembly, method by laser ablation is removed the film rete of assembly surrounding, makes assembly peripheral regions become border area clearly.
As shown in Figure 2, existing BIPV membrane photovoltaic component is to get on the basis of conventional membrane photovoltaic component, comprise the first electrode 20a and the second electrode 20b, euphotic zone 22 is perpendicular to the bearing of trend of film photovoltaic cell, at euphotic zone 22 places, the film semiconductor layer of assembly and dorsum electrode layer by laser incising eating away to realize printing opacity; The part remaining is divided into a series of separate sub-components 21 by euphotic zone 22, described a plurality of sub-component 21 is array way and arranges, with sub-component 21 series connection of a line, multirow sub-component 21 is by being arranged on the first electrode 20a and the second electrode 20b parallel connection at two ends.
Wherein, the width of described euphotic zone 22 is determined by the size of the spot diameter of laser, in order to retain complete front electrode layer, reduce the impact of defect point on BIPV membrane photovoltaic component power, in existing production technology, the general green laser of spot diameter 0.15mm ~ 0.2mm that adopts carries out groove to above-mentioned conventional membrane photovoltaic component, forms a series of vertical with film photovoltaic cell bearing of trend and have an euphotic zone 22 of one fixed width and fixed intervals.As the spot diameter of light green laser is specially 0.2mm, the width of described euphotic zone 22 is also 0.2mm.
But the power output of existing BIPV membrane photovoltaic component can be lower than the power output with the conventional photovoltaic module of identical work area.
Summary of the invention
For solving the problems of the technologies described above, the object of the present patent application is to provide a kind of manufacture method and BIPV membrane photovoltaic component of BIPV membrane photovoltaic component, to improve power output.
For achieving the above object, the invention provides following technical scheme:
A manufacture method for BIPV membrane photovoltaic component, comprising:
One conventional membrane photovoltaic component is provided, and described conventional membrane photovoltaic component comprises a plurality of film photovoltaic cells, and described film photovoltaic cell is strip;
Utilize laser scoring technique to process described conventional membrane photovoltaic component, form euphotic zone, the width of described euphotic zone is more than 0.3mm.
Preferably, the process of utilizing laser scoring technique to process described conventional membrane photovoltaic component, specifically comprises:
Utilize green laser incising that spot diameter is 0.15mm ~ 0.2mm to fall semiconductor layer and the dorsum electrode layer of described conventional membrane photovoltaic component, through twice or groove repeatedly, form the euphotic zone of width more than 0.3mm.
Preferably, the process of utilizing laser scoring technique to process described conventional membrane photovoltaic component, specifically comprises:
Utilize the infrared laser that spot diameter is 0.6mm ~ 1mm to carve the semiconductor layer of described conventional membrane photovoltaic component, front electrode and dorsum electrode layer, through one or many groove, form the euphotic zone of width more than 0.3mm.
Preferably, described euphotic zone is uniformly distributed.
Preferably, described euphotic zone uneven distribution.
Preferably, the width of described euphotic zone is 0.5mm ~ 5mm.
Preferably, the width of described euphotic zone is 1mm.
Preferably, described euphotic zone is perpendicular to described film photovoltaic cell.
A membrane photovoltaic component, comprising:
A plurality of sub-components, described a plurality of sub-components are array way arranges, and connects with the sub-component of a line, between two adjacent row sub-components, is provided with euphotic zone, and the width of described euphotic zone is more than 0.3mm.
In technical scheme provided by the present invention, utilize laser scoring technique to process conventional membrane photovoltaic component, form euphotic zone, the width of described euphotic zone is more than 0.3mm.Owing to having increased the width of euphotic zone, compared to the existing BIPV membrane photovoltaic component with equal area, identical transmitance, BIPV membrane photovoltaic component provided by the present invention has euphotic zone still less, when making euphotic zone, the impact of the thin film semiconductive layer of euphotic zone boundary also can correspondingly be reduced, and then improved the power output of whole BIPV membrane photovoltaic component.
In addition, owing to having increased the width of euphotic zone,, in the situation that BIPV membrane photovoltaic component transmitance is certain, the width of the non-transparent area between two euphotic zones also can increase, thereby can greatly reduce the impact of defect point on power output.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is conventional membrane photovoltaic component schematic diagram;
Fig. 2 is existing BIPV membrane photovoltaic component schematic diagram;
Fig. 3 is conventional membrane photovoltaic component profile;
Fig. 4 is a kind of BIPV membrane photovoltaic component schematic diagram provided by the invention.
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Just as described in the background section, the power output of existing BIPV membrane photovoltaic component is lower than the power output with the conventional photovoltaic module of identical work area.
Inventor studies discovery, existing BIPV membrane photovoltaic component is in laser scoring, inevitably, laser can impact the border of euphotic zone, reduce the power output of BIPV membrane photovoltaic component, and in order to retain complete front electrode layer, reduce the impact of defect point on BIPV membrane photovoltaic component power, in existing production technology, the general green laser of spot diameter 0.15mm ~ 0.2mm that adopts carries out groove to above-mentioned conventional membrane photovoltaic component, the width of described euphotic zone is also just between 0.15mm ~ 0.2mm, the width of euphotic zone is less, for thering is certain area, the BIPV membrane photovoltaic component of certain transmitance, euphotic zone is more, the power output of photovoltaic module is just lower.
The manufacture method that the invention discloses a kind of BIPV membrane photovoltaic component, comprising:
One conventional membrane photovoltaic component is provided, and described conventional membrane photovoltaic component comprises a plurality of film photovoltaic cells, and described film photovoltaic cell is strip;
Utilize laser scoring technique to process described membrane photovoltaic component, form euphotic zone, the width of described euphotic zone is more than 0.3mm.
As can be seen from the above scheme, owing to having increased the width of euphotic zone, compared to the existing BIPV membrane photovoltaic component with equal area, identical transmitance, BIPV membrane photovoltaic component provided by the present invention has euphotic zone still less, when making euphotic zone, the impact of the thin film semiconductive layer of euphotic zone boundary also can correspondingly be reduced, and then improved the power output of whole BIPV membrane photovoltaic component.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public specific embodiment.
The manufacture method that the embodiment of the invention discloses a kind of BIPV membrane photovoltaic component, comprising:
One conventional membrane photovoltaic component is provided, and described conventional membrane photovoltaic component comprises a plurality of film photovoltaic cells, and described film photovoltaic cell is strip.
Concrete, as shown in Figure 1, conventional membrane photovoltaic component is that the method by laser scoring is divided into a plurality of film photovoltaic cells 11 by the full wafer photovoltaic module being arranged on a substrate 10, described a plurality of film photovoltaic cell 11 is realized series connection by interior integrated method, at film photovoltaic cell 11 places that are positioned at two ends, be respectively provided with an electrode (the first electrode 10a and the second electrode 10b) respectively as the both positive and negative polarity of assembly, method by laser ablation is removed the film rete of assembly surrounding, makes assembly peripheral regions become border area clearly.
(Fig. 3 is the profile along A-A ' line) as shown in Figure 3, substrate 10 is transparent substrates, is preferably glass substrate; Electrode 2 before being provided with on described substrate 10 surfaces, described front electrode 2 is transparent conductive oxide film electrode, and described front electrode 2 is strip shaped electric poles, by laser scoring technique, to being deposited on the lip-deep transparent conductive oxide film layer of substrate 1, carry out obtaining after groove processing; On described front electrode 2 surfaces, be provided with semiconductive thin film 3, described semiconductive thin film 3 is strip, by laser scoring technique, to being deposited on the lip-deep semiconductor film layer of front electrode 2, carry out obtaining after groove processing, and operative semiconductor film material is filled in the gap between each front electrode 2, plays the effect of insulation; On described semiconductive thin film 3 surfaces, be provided with rear electrode 4, described rear electrode 4 is strip, by laser scoring technique, to being deposited on the lip-deep rear electrode layer of semiconductive thin film 3, carry out obtaining after groove processing, and part rear electrode material is filled in the gap between each semiconductive thin film 3, and be electrically connected to front electrode 2, the first electrode 10a and the second electrode 10b are arranged on the two ends of assembly.
Described front electrode, semiconductive thin film and rear electrode have formed film photovoltaic cell, as seen from Figure 3, the front electrode of one film photovoltaic cell is electrically connected to the rear electrode of an adjacent film photovoltaic cell, the rear electrode of this film photovoltaic cell is electrically connected to the front electrode of another adjacent film photovoltaic cell, series connection mutually between each film photovoltaic cell on same substrate.
Utilize laser scoring technique to process described membrane photovoltaic component, form euphotic zone, the width of described euphotic zone is more than 0.3mm, and preferred, the width of described euphotic zone is 0.5mm ~ 5mm, preferred, and the width of described euphotic zone is 1mm.
Wherein, the process of utilizing laser scoring technique to process described membrane photovoltaic component, specifically comprises:
Utilize green laser incising that spot diameter is 0.15mm ~ 0.2mm to fall thin film semiconductive layer and the dorsum electrode layer of described conventional membrane photovoltaic component, through twice or groove repeatedly, form the euphotic zone of width more than 0.3mm.
More specifically, if requiring the transmitance of described BIPV membrane photovoltaic component is 20%, the green laser that the wavelength that utilizes green (light) laser to produce is 0.2mm for 532nm, spot diameter is delineated five grooves side by side or back and forth to described conventional membrane photovoltaic component, described five grooves are closely adjacent, and there is no thin film semiconductor material and dorsum electrode layer between two adjacent grooves, every printing opacity bandwidth 0.2mm, the width of the final euphotic zone forming is 1mm, and described euphotic zone is perpendicular to the bearing of trend of described film photovoltaic cell.
On described conventional membrane photovoltaic component, with identical width, identical spacing, delineate other euphotic zones according to the method described above, distance between two adjacent euphotic zones is 5mm, between two adjacent euphotic zones, the width of non-transmission region is 4mm, on the final BIPV membrane photovoltaic component forming, the Area Ratio of glazed area and whole BIPV membrane photovoltaic component is 1:5, and the transmitance of described BIPV membrane photovoltaic component is 20%.And due to the formation of euphotic zone, described BIPV membrane photovoltaic component is divided into a plurality of sub-components, described a plurality of sub-components are array way arranges, and the sub-component series connection with a line, is provided with euphotic zone between two adjacent row sub-components.
The above-mentioned method of utilizing green laser grooving and scribing euphotic zone, front electrode does not have destroyed, between each row sub-component, still can pass through front electrode conduction.And, to compare with the existing BIPV film photovoltaic cell with identical transmitance, the number of laser scoring is identical, does not reduce working (machining) efficiency.
Or the process of utilizing laser scoring technique to process described membrane photovoltaic component, specifically comprises:
Utilize the infrared laser that spot diameter is 0.6mm ~ 1mm to carve the semiconductor layer of described conventional membrane photovoltaic component, front electrode and dorsum electrode layer, through one or many groove, form the euphotic zone of width more than 0.3mm.
More specifically, if requiring the transmitance of described BIPV membrane photovoltaic component is 20%, the infrared laser that the wavelength that utilizes infrared laser generation is 1mm for 1064nm, spot diameter is delineated a groove to described conventional membrane photovoltaic component, remove the semiconductor layer of described conventional membrane photovoltaic component, front electrode and dorsum electrode layer, described groove is euphotic zone, the width of described euphotic zone is 1mm, and described euphotic zone is perpendicular to the bearing of trend of described film photovoltaic cell.
On described conventional membrane photovoltaic component, with identical width, identical spacing, delineate other euphotic zones according to the method described above, distance between two adjacent euphotic zones is 5mm, between two adjacent euphotic zones, the width of non-transmission region is 4mm, on the final BIPV membrane photovoltaic component forming, the Area Ratio of glazed area and whole BIPV membrane photovoltaic component is 1:5, and the transmitance of described BIPV membrane photovoltaic component is 20%.And due to the formation of euphotic zone, described BIPV membrane photovoltaic component is divided into a plurality of sub-components, described a plurality of sub-components are array way arranges, and the sub-component series connection with a line, is provided with euphotic zone between two adjacent row sub-components.
The above-mentioned method of utilizing infrared laser delineation euphotic zone, the front electrode that is positioned at euphotic zone part is carved, separate on described BIPV membrane photovoltaic component between each row sub-component, by being arranged on the first electrode and the parallel connection of the second electrode at assembly two ends.And, even in non-transmission region appearance point defect, owing to having increased the width of non-transmission region, can greatly reduce the impact of point defect on the power output of photovoltaic module equally.Compare with the existing BIPV film photovoltaic cell with identical transmitance, the number of laser scoring has reduced, and has improved accordingly working (machining) efficiency.
The BIPV photovoltaic module finally obtaining as shown in Figure 4, wherein, substrate 30, sub-component 31 is arranged on substrate 30, being array way arranges, and with sub-component 31 series connection of a line, euphotic zone 32 is between each row sub-component 31, and the first electrode 30a and the second electrode 30b are separately positioned on the two ends of assembly.
In technical scheme provided by the present invention, utilize laser scoring technique to process conventional membrane photovoltaic component, form euphotic zone, the width of described euphotic zone is more than 0.3mm.Owing to having increased the width of euphotic zone, compared to the existing BIPV membrane photovoltaic component with equal area, identical transmitance, BIPV membrane photovoltaic component provided by the present invention has euphotic zone still less, when making euphotic zone, the impact of the thin film semiconductive layer of euphotic zone boundary also can correspondingly be reduced, and then improved the power output of whole BIPV membrane photovoltaic component.And, because non-light transmission part (being sub-component) width increases, greatly reduce the impact of defect point on power output.
In addition, in the present invention, described euphotic zone can be uniformly distributed also uneven distribution according to the actual requirements, or in order to reach certain artistic effect, the concrete shape of euphotic zone described in the present invention and bearing of trend can be made corresponding adjustment according to the actual requirements, to reach better visual effect.
Another embodiment of the present invention discloses a kind of BIPV membrane photovoltaic component, comprising:
A plurality of sub-components, each sub-component comprises front electrode, rear electrode and thin film semiconductive layer, described a plurality of sub-component is array way and arranges, and the sub-component with a line is connected by front electrode and rear electrode, also be provided with the first electrode and the second electrode being positioned at assembly two ends, in parallel by the first electrode and the second electrode between multirow sub-component, between two adjacent row sub-components, be provided with euphotic zone, the width of described euphotic zone is more than 0.3mm, preferably, the width of described euphotic zone is 0.5mm ~ 5mm, preferred, and the width of described euphotic zone is 1mm.Distance between two adjacent euphotic zones can be determined according to the transmitance of required BIPV membrane photovoltaic component.
And, described euphotic zone can be uniformly distributed also uneven distribution according to the actual requirements, or in order to reach certain artistic effect, the concrete shape of euphotic zone described in the present invention and bearing of trend can be made corresponding adjustment according to the actual requirements, to reach better visual effect, now, the arrangement mode of described sub-component also can change according to the actual requirements.
In technical scheme provided by the present invention, the width of described BIPV membrane photovoltaic component euphotic zone is more than 0.3mm.Owing to having increased the width of euphotic zone, so can reduce the impact of point defect on the power output of photovoltaic module, and compared to the existing BIPV membrane photovoltaic component with equal area, identical transmitance, BIPV membrane photovoltaic component provided by the present invention has euphotic zone still less, when making euphotic zone, the impact of the thin film semiconductive layer of euphotic zone boundary also can correspondingly be reduced, and then improved the power output of whole BIPV membrane photovoltaic component.And, because non-light transmission part (being sub-component) width increases, greatly reduce the impact of defect point on power output.
In addition, in described BIPV membrane photovoltaic component, between two adjacent row sub-components, by front electrode, be connected, or independent mutually between two adjacent row sub-components, between two row sub-components, there is no front electrode.
In specification of the present invention, each embodiment adopts the mode of going forward one by one to describe, and each embodiment stresses is the difference with other embodiment, between each embodiment identical similar part mutually referring to.Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a manufacture method for BIPV membrane photovoltaic component, is characterized in that, comprising:
One conventional membrane photovoltaic component is provided, and described conventional membrane photovoltaic component comprises a plurality of film photovoltaic cells, and described film photovoltaic cell is strip;
Utilize laser scoring technique to process described conventional membrane photovoltaic component, form euphotic zone, the width of described euphotic zone is more than 0.3mm.
2. manufacture method according to claim 1, is characterized in that, the process of utilizing laser scoring technique to process described conventional membrane photovoltaic component, specifically comprises:
Utilize green laser incising that spot diameter is 0.15mm ~ 0.2mm to fall semiconductor layer and the dorsum electrode layer of described conventional membrane photovoltaic component, through twice or groove repeatedly, form the euphotic zone of width more than 0.3mm.
3. manufacture method according to claim 1, is characterized in that, the process of utilizing laser scoring technique to process described conventional membrane photovoltaic component, specifically comprises:
Utilize the infrared laser that spot diameter is 0.6mm ~ 1mm to carve the semiconductor layer of described conventional membrane photovoltaic component, front electrode and dorsum electrode layer, through one or many groove, form the euphotic zone of width more than 0.3mm.
4. manufacture method according to claim 1, is characterized in that, described euphotic zone is uniformly distributed.
5. manufacture method according to claim 1, is characterized in that described euphotic zone uneven distribution.
6. manufacture method according to claim 1, is characterized in that, the width of described euphotic zone is 0.5mm ~ 5mm.
7. manufacture method according to claim 1, is characterized in that, the width of described euphotic zone is 1mm.
8. manufacture method according to claim 1, is characterized in that, described euphotic zone is perpendicular to described film photovoltaic cell.
9. a BIPV membrane photovoltaic component, is characterized in that, comprising:
A plurality of sub-components, described a plurality of sub-components are array way arranges, and connects with the sub-component of a line, between two adjacent row sub-components, is provided with euphotic zone, and the width of described euphotic zone is more than 0.3mm.
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| CN105047739A (en) * | 2015-06-24 | 2015-11-11 | 北京汉能光伏投资有限公司 | Light-transparent thin-film cell assembly with enclosed laser rays |
| CN110289329A (en) * | 2019-06-27 | 2019-09-27 | 西安中易建科技有限公司 | The translucent photovoltaic module of film and manufacturing system and method for inhibition moire fringes |
| CN113594281A (en) * | 2021-07-30 | 2021-11-02 | 成都中建材光电材料有限公司 | Hot-spot-resistant photovoltaic power generation glass and manufacturing method thereof |
| CN114944435A (en) * | 2022-05-17 | 2022-08-26 | 河南宸亚商业运营管理有限公司 | Light-transmitting double-sided power generation thin-film solar module and preparation process thereof |
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| CN105047739A (en) * | 2015-06-24 | 2015-11-11 | 北京汉能光伏投资有限公司 | Light-transparent thin-film cell assembly with enclosed laser rays |
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| CN114944435A (en) * | 2022-05-17 | 2022-08-26 | 河南宸亚商业运营管理有限公司 | Light-transmitting double-sided power generation thin-film solar module and preparation process thereof |
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