CN103579406A - Infrared detector structure for improving spectral flatness - Google Patents
Infrared detector structure for improving spectral flatness Download PDFInfo
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- CN103579406A CN103579406A CN201310469889.3A CN201310469889A CN103579406A CN 103579406 A CN103579406 A CN 103579406A CN 201310469889 A CN201310469889 A CN 201310469889A CN 103579406 A CN103579406 A CN 103579406A
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- 230000003595 spectral effect Effects 0.000 title abstract description 7
- 230000004044 response Effects 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000001228 spectrum Methods 0.000 claims description 23
- 230000001235 sensitizing effect Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 15
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229930188970 Justin Natural products 0.000 description 1
- 241000404144 Pieris melete Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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Abstract
The invention discloses an infrared detector structure for improving response spectral flatness. The infrared detector structure for improving the spectral flatness comprises metal electrodes, a substrate, a photosensitive area and other media. The metal electrodes are located on the left side and the right side of the rectangular photosensitive area. The other media are located on the upper side and the lower side of the rectangular photosensitive area. The other media are the same as the photosensitive area in material and are electrically isolated from the metal electrodes and the photosensitive area. The infrared detector structure is simple and effective, non-linear response spectral shapes are eliminated, and the spectral flatness is improved.
Description
Technical field
The present invention relates to a kind of structure of Infrared Detectors, particularly a kind of infrared detector structure and preparation method who improves response spectrum evenness.
Background technology
Modern infrared detection technique is significant to national economy social development.Development along with remote sensing instrument technology, from point target detection, scanning imagery, multispectral scanner imaging, develop into Hyper spectral Imaging, Infrared Detectors also by single band unit component, multicomponent device, multiband line array device to single band infrared focus plane, multiband infrared focus plane and dexterous type integrated detector assembly future development.On the one hand, Infrared Detectors has irreplaceable effect aspect earth observation.On the other hand, the device centre-to-centre spacing of infra-red focus planar chip by hundreds of micron to tens even tens microns stride forward.When device architecture size and photon wavelength is close or within an order of magnitude time, the fluctuation of photon starts the performance of device to produce material impact.Now, classical cadmium-telluride-mercury infrared detector photoelectric respone theory is no longer suitable for designing the Long Wave Infrared Probe of this small size, the photoelectric properties of device are not only relevant with material parameter, the geometry of device, surrounding enviroment depend on structure and the process thereof of detector to the evenness of the response spectrum of device performance also important, particularly device.
Abroad, US and European all successful development HgCdTe infrared focal plane detector.2004 Nian， U.S. Rockwell Developed 512 * 512 LONG WAVE INFRARED focal plane components, the area of chip is 36 μ m * 36 μ m, cut-off wavelength is 9.6 μ m.384 * 288 mercury cadmium telluride LONG WAVE INFRARED focal planes of France Sofradir development of company, cellar area is 25 μ m * 25 μ m, response wave band is 7.7 μ m-9.0 μ m.Germany resource environment satellite BIRD1 has adopted 2 * 512 mercury cadmium telluride Linear FPA chips, and response wave band is 8.5 μ m-9.3 μ m, and cellar area is 30 μ m * 30 μ m.China FY-2 D star (transmitting in the end of the year 2006) adopts the cadmium-telluride-mercury infrared detector of double base, and long wave band is 10.3 μ m-11.3 μ m and 11.5 μ m-12.5 μ m, and cellar area is 82 μ m * 82 μ m.Although AlGaAs/GaAs quantum trap infrared detector has also had very great development in recent years, array scale is up to 640 * 480, and due to its lower external quantum efficiency, and general required working temperature is lower.These infrared focus planes have a common feature above, are exactly that its cell size and peak response wavelength are all within an order of magnitude.Can predict, the cell size of device also can be more and more less.
Opto-electronic device, when small size, has produced many non-linear phenomenas [1-10].Within 2008, Univ Nottingham UK has reported Novel hot Electron Heat radiation detector (HEB), and operating frequency is that 150-200GHz(corresponding wavelength is 1.5-2mm), provided the device architecture [9] after optical coupled is optimized.In addition, Britain research group finds in far infrared band (30-300 μ m) detector, and when the size of device is at hundreds of micron during to 1 millimeter, the geometric configuration of device needs to optimize, to obtain optimum optical coupling efficiency [10].After cadmium-telluride-mercury infrared detector peak response wavelength is elongated and chip area diminishes, it is outstanding that the fluctuation of photon also becomes, and the evenness of response device rate and response spectrum shows the feature relevant to response wave length, and the inhomogeneities of die response increases simultaneously.And for super spectral instrument, evenness and the uniformity of die response spectrum spectral pattern, to a certain extent, more important than the height of chip detectivity.Foreign literature also has a small amount of report to this phenomenon: the increase of response wave length will make the evenness variation of response, by at chip photosurface superficial growth one deck anti-reflection film with increase some short grained structures on substrate, can improve the evenness [11-12] of response.The mercury cadmium telluride LONG WAVE INFRARED photocon of Tu1Shi U.S. NASA report, has or not the response spectrum [12] of anti-reflection film on photosurface.From Fig. 1 (a), device peak response wavelength is greater than 10 microns, and near peak value, response curve limpens; On device photosurface, grow after anti-reflection film, can improve near the evenness (as shown in Fig. 1 (b)) responding peak value; But in its response wave band, along with the increase of wavelength, the evenness of response is also very undesirable.Tracing it to its cause, is the fluctuation of not considering infrared photon, does not recognize that non-photosensitivity sensillary area territory also can produce larger impact to the optical field distribution of photo sensitive area.
The present invention proposes a kind of comparatively simple and effective device architecture, by around photo sensitive area, retain the material that a part is identical with photo sensitive area optical property, substantially eliminate the non-linear of response spectrum spectrum shape, improved the evenness of spectrum.
List of references:
(1)Michael?J.Preiner,Ken?T.Shimizu,Justin?S.White,and?Nicholas?A.Melosh,Efficient?optical?coupling?into?metal-insulator-metal?plasmon?modes?with?subwavelength?diffraction?gratings,Appl.Phys.Lett.,2008,Vol.92:113109.
(2)Kyosuke?Sakai,Eiji?Miyai,and?Susumu?Noda,Coupled-wave?model?for?square-lattice?two-dimensional?photonic?crystal?with?transverse-electric-like?mode,Appl.Phys.Lett.,2006,Vol.89:021101.
(3)K.P.Yap,B.Lamontagne,A.Delage,S.Janz,A.Bogdanov,M.Picard,E.Post,P.Chow-Chong,M.Malloy,D.Roth,P.Marshall,K.Y.Liu，and?B.Syrett，Fabrication?of?lithographically?defined?optical?coupling?facets?for?silicon-on-insulator?waveguides?by?inductively?coupled?plasma?etching,J.Vac.Sci.Technol.A,2006,Vol.24(3):812-816.
(4)E.A.Dauler,P.I.Hopman,K.A.McIntosh,J.P.Donnelly,E.K.Duerr,R.J.Magliocco,L.J.Mahoney,K.M.Molvar,A.Napoleone,D.C.Oakley,and?F.J.O’Donnell,Scaling?of?dark?count?rate?with?active?area?in1.06μm?photon-counting?InGaAsP/InP?avalanche?photodiodes，Appl.Phys.Lett.,2006,Vol.89:111102.
(5)F.Pistone,P.Tribolet,and?M.Vuillermet,High?resolution?staring?arrays?answering?compact?MW?and?LW?applications,Opto-Electron.Rev.,2006,Vol.14(2):109-118.
(6)M.Carmody,J.G.Pasko,D.Edwall,E.Piquette,M.Kangas,S.Freeman,J.Arias,R.Jacobs,W.Mason,A.Stoltz,Y.Chen,and?N.K.Dhar,Status?of?LWIR?HgCdTe-on-Silicon?FPA?Technology,J.Electron.Mater.,2008,Vol.37:?1184-1188.
(7)J.Y.Andersson,J?Alverbro,J.Borglind,P.Helander,H.Martijn,and?M.Ostlund,320x240Pixels?Quantum?Well?Infrared?Photodetector(QWIP)Array?for?Thermal?Imaging:Fabrication?and?Evaluatio,SPIE,1997,Vol.3061:740-748.
(8)Y.Fu,M.Willander,X.-Q.Liu,W.Lu,S.C.Shen,H.H.Tan,C.Jagadish,J.Zou?and?D.J.H.Cockayne,Optical?transition?in?infrared?photodetector?based?on?V-groove?Al0.5Ga0.5As/GaAs?multiple?quantum?wire,J.Appl.Phys.,2001,Vol.89:2351-2356.
(9)Dmitry?Morozov,Philip?Mauskopf,Christopher?Dunscombe,Mohamed?Henini,Antenna?coupled?direct?detector?for?millimetre?and?submillimetre?astronomy?based?on2D?electron?gas?in?semiconducting?heterostructure,Proc.SPIE,2008,Vol.7020:702021.
(10)Philip?Mauskopfa,Dmitry?Morozova,Dorota?Glowackab,David?Goldieb,Stafford?Withingtonb,Marcel?Bruijnc,Piet?DeKortec,Henk?Hoeversc,Marcel?Ridderc,Jan?Van?Der?Kuurc,Jian-Rong?Gaod,Development?of?transition?edge?superconducting?bolometers?for?the?SAFARI?Far-Infrared?spectrometer?on?the?SPICA?space-borne?telescope,Proc.SPIE,2008,Vol.7020:70200N.
(11)J.W.Little,S.P.Svensson,W.A.Beck,A.C.Goldberg,S.W.Kennerly,T.Hongsmatip,M.Winn,and?P.Uppal,Thin?active?region,type?II?superlattice?photodiode?arrays:Single-pixel?and?focal?plane?array?characterization,J.Appl.Phys.,2007,Vol.101:044514.
(12)S.R.Babu,K.Hu,S.Manthripragada,R.J.Martineau,C.Kotecki,F.Peters,A.Burgess,D.B.Mott,A.Ewin,A.Miles,T.Nguyen,and?P.Shu,Improved?HgCdTe?Detectors?with?Novel?Anti-Reflection?Coating,Proc.SPIE,1996,Vol.2816:84-89.
Summary of the invention
The object of the invention is to propose a kind of infrared detector structure that can improve response evenness, this structure and common semiconductor device technology are compatible, efficiently solve conventional Infrared Detectors, particularly the response spectrum of Long Wave Infrared Probe is composed " multimodal " technical problem of shape: within the scope of response wave band, not a comparatively level and smooth straight line, but show, there is the curve comparatively obviously rising and falling.
The structural representation of the Infrared Detectors with the evenness of improving response spectrum that this patent proposes as shown in Figure 2.It comprises metal electrode 1, substrate 2, light sensitive area 3 and other medium 4.Metal electrode 1 is positioned at the right and left of rectangular light sensitizing range 3, and other medium 4 is positioned at the both sides up and down of rectangular light sensitizing range 3.
Other described medium 4 adopts the material identical with light sensitive area; In electricity, isolate with metal electrode and light sensitive area.
Infrared Detectors preparation method of the present invention is as follows:
The material wafers (take long wave mercury cadmium telluride and detector below as example) of single-sided polishing the good Infrared Detectors of surface treatment is bonded in Sapphire Substrate with epoxy resin paster, and the thickness of epoxy resin, after compressing tablet, is generally less than 2 microns; The second face of Hgcdte is carried out to rough polishing to 50 micron left and right, carry out subsequently Chemical Physics polishing (essence is thrown), until 8～15 microns.The second face to Hgcdte carries out the passivation technologies such as anodic oxidation.Carry out photoetching for the first time and carry out chemical etching technology, first in surface corrosion, go out metal electrode region, then use magnetically controlled sputter method at metal electrode region growing Ohm contact electrode, then remove photoresist and clean surface.Then carry out photoetching for the second time and at non-electrode surface growth anti-reflection film, the thickness of anti-reflection film can be determined by the response peak wavelength of Infrared Detectors.Finally carry out photoetching for the third time and etching technics, light sensitive area 3 and other medium 4 regions are separated.For mercury cadmium telluride long wave material, when component x=0.205, its absorption coefficient=1660cm
-1; The mercury cadmium telluride thickness of long-wave light-guide device is generally 10 μ m left and right, and incident light, after incident and bottom reflection, is approximately 3.5% the wide of plane of incidence outgoing like this.
Incident light is in the generation incident of mercury cadmium telluride photosurface and reflection, and catoptrical relative intensity is relevant with the refractive index of mercury cadmium telluride.Get mercury cadmium telluride n=3.6 when long wave, during normal incidence, reflectivity is 31.9%.Incident light also reflects the non-photosensitivity face place at device, and this major part will occur in the surface of jewel sheet.Look into handbook known, at 12 μ m places, sapphire reflectivity is approximately 85%.Due to the fluctuation of long wave photon, very strong with the coherence of the long wave photon at contiguous jewel sheet place at the long wave photon at mercury cadmium telluride photosurface place, coherence length is approximately tens-hundreds of micron, and the photosurface of this yardstick and long-wave light-guide device is roughly the same.Therefore, long wave photon will interfere phenomenon on photocon surface, and this has caused the multimodal phenomenon in response spectrum.The practical devices pictorial diagram finally obtaining, as shown in Figure 4.In Fig. 4, by around photosurface, reservation formation has " enclosure wall " shape, the dielectric material the same with photosurface optical properties of materials (as other medium 4 regions in Fig. 2), the light that incides " enclosure wall " part will be substantially by mercury cadmium telluride Intrinsic Gettering, there is no reverberation, this has just eliminated the strong reverberation that originally comes from Sapphire Substrate substantially, also just eliminated the uneven distribution phenomenon of the light field that infrared photon occurs between photosensitive region and other region, so just improved the evenness of response spectrum, substantially eliminated " multimodal " phenomenon of spectrum shape.Meanwhile, due to " enclosure wall " structure and photo sensitive area electric isolation, so can not produced photogenerated current by the infrared photon of other medium 4 region material institute Intrinsic Getterings.
The response spectrum that adopt " enclosure wall " structure shown in Fig. 4, has a Long Wave Infrared Probe that improves response spectrum evenness as shown in Figure 5.From Fig. 1 and Fig. 5, contrasted, in the wave band of intrinsic response, the response spectrum of device has good evenness, has substantially eliminated " multimodal " phenomenon.
The invention has the advantages that: the response spectrum of the Infrared Detectors that first invention proposes can have good evenness; The non-photosensitivity region of second this structure can adopt the material identical with photosensitive region optical property, can adopt commaterial; The 3rd this structure and technique thereof are all comparatively simple, substantially can not increase the complexity of technique or affect the rate of finished products of chip.
Accompanying drawing explanation
Fig. 1 is the relative response spectrum of the mercury cadmium telluride LONG WAVE INFRARED photocon of foreign literature [12] report: (a) device photosurface surface is without anti-reflection film, and (b) there is anti-reflection film on device photosurface surface.
Fig. 2 is a kind of infrared detector structure schematic diagram that can improve spectrum evenness.
Fig. 3 is conventional infrared detector structure schematic diagram.
Fig. 4 is employing " enclosure wall " structure, has the Long Wave Infrared Probe pictorial diagram of improving spectrum evenness.
Fig. 5 is the response spectrum that adopts the Long Wave Infrared Probe after new device structure.
Embodiment:
Below in conjunction with Fig. 2, the specific embodiment of the present invention is elaborated.
1. the interval between light sensitive area 3 and other areas of dielectric 4 is generally no more than the peak wavelength of Infrared Detectors response, in the scope of lithographic accuracy and process conditions permission, the smaller the better.
2. other areas of dielectric 4, generally select in practice the material the same with light sensitive area 3, such as being all mercury cadmium telluride, and all the grow anti-reflection film of same thickness and medium of light sensitive area 3 and other areas of dielectric 4 surfaces, then utilize etching or etching process to carry out electric isolation.Like this infrared photon in light sensitive area 3 and the surperficial reflection of other areas of dielectric 4 and interference each other all greatly weaken.
3. the physical dimension in other medium 4 regions should be greater than the peak wavelength of Infrared Detectors response, can get in practice the more than ten times of peak wavelength of response.
4. region that close on light sensitive area 3, that exist obvious difference in height (comparing with response peak wavelength) should cover other medium 4, and keeps electric insulation with light sensitive area 3; Do not have difference in height or less (be less than response peak wavelength 1/10th) region is without covering other medium 4, as metal electrode region 1.
Claims (1)
1. an infrared detector structure that improves response spectrum evenness, it comprises metal electrode (1), substrate (2), light sensitive area (3) and other medium (4), it is characterized in that: metal electrode (1) is positioned at the right and left of rectangular light sensitizing range (3), other medium (4) is positioned at the both sides up and down of rectangular light sensitizing range (3); Described other medium (4) adopts the material identical with light sensitive area, in electricity, isolates with metal electrode and light sensitive area.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104048754A (en) * | 2014-05-21 | 2014-09-17 | 西北核技术研究所 | Photothermal effect correcting method of light guide type detector in laser parameter measurement |
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|---|---|---|---|---|
| US20030168599A1 (en) * | 2000-07-25 | 2003-09-11 | Kevin Liddiard | Active or self-biasing micro-bolometer infrared detector |
| CN101050978A (en) * | 2007-04-25 | 2007-10-10 | 中国科学院上海技术物理研究所 | Tellurium-cadmium-mercury infrared detector chip for preventing non-infrared radiation incidence plane response |
| CN102175329A (en) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
| CN203631575U (en) * | 2013-10-10 | 2014-06-04 | 中国科学院上海技术物理研究所 | Infrared detector capable of improving spectrum flatness |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030168599A1 (en) * | 2000-07-25 | 2003-09-11 | Kevin Liddiard | Active or self-biasing micro-bolometer infrared detector |
| CN101050978A (en) * | 2007-04-25 | 2007-10-10 | 中国科学院上海技术物理研究所 | Tellurium-cadmium-mercury infrared detector chip for preventing non-infrared radiation incidence plane response |
| CN102175329A (en) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
| CN203631575U (en) * | 2013-10-10 | 2014-06-04 | 中国科学院上海技术物理研究所 | Infrared detector capable of improving spectrum flatness |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104048754A (en) * | 2014-05-21 | 2014-09-17 | 西北核技术研究所 | Photothermal effect correcting method of light guide type detector in laser parameter measurement |
| CN104048754B (en) * | 2014-05-21 | 2016-02-03 | 西北核技术研究所 | The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement |
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