CN103578940A - Aluminum metal grid electrode forming method - Google Patents
Aluminum metal grid electrode forming method Download PDFInfo
- Publication number
- CN103578940A CN103578940A CN201210264971.8A CN201210264971A CN103578940A CN 103578940 A CN103578940 A CN 103578940A CN 201210264971 A CN201210264971 A CN 201210264971A CN 103578940 A CN103578940 A CN 103578940A
- Authority
- CN
- China
- Prior art keywords
- layer
- aluminum metal
- soakage
- metal gate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 65
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 68
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 131
- 239000004411 aluminium Substances 0.000 claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000001764 infiltration Methods 0.000 abstract 1
- 230000008595 infiltration Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000003701 mechanical milling Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- WUNIMIODOAGQAW-UHFFFAOYSA-N [O-2].[Ba+2].[Ti+4] Chemical compound [O-2].[Ba+2].[Ti+4] WUNIMIODOAGQAW-UHFFFAOYSA-N 0.000 description 1
- NRCKPUWWRHKANR-UHFFFAOYSA-N [O].[N].[Si].[Hf] Chemical compound [O].[N].[Si].[Hf] NRCKPUWWRHKANR-UHFFFAOYSA-N 0.000 description 1
- PXNDALNSUJQINT-UHFFFAOYSA-N [Sc].[Ta] Chemical compound [Sc].[Ta] PXNDALNSUJQINT-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 yittrium oxide Chemical compound 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28105—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention provides an aluminum metal grid electrode forming method. In the method, an infiltration layer in a ditch opening is made to repel the aluminum chemical vapor deposition process, so that when the chemical vapor deposition process is used for forming an aluminum seed layer subsequently, the aluminum seed layer can not accumulate in the ditch opening. Consequently, when a ditch is filled through depositing aluminum body layers, the ditch can be filled conveniently and reliably, and holes in aluminum metal layers including the aluminum seed layer and the aluminum body layers are prevented from occurring, so that an aluminum metal grid high in reliability can be obtained.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind of formation method of aluminum metal gate.
Background technology
In order to control short-channel effect, more the semiconductor device of small-feature-size requires further to improve gate electrode electric capacity, and this can realize by the thickness of continuous attenuate gate oxide, but the thing followed is the lifting of gate electrode leakage current.Especially, when silicon dioxide is as gate oxide, thickness is during lower than 3.0 nanometer, and leakage current just becomes and cannot stand.
In order to address the above problem, high dielectric constant insulating material is used to replace silicon dioxide, and high dielectric constant insulating material can be hafnium silicate, hafnium silicon oxygen nitrogen compound, hafnium oxide etc., and dielectric constant is generally all greater than 15.Adopt this material can further improve gate electrode electric capacity, meanwhile, gate electrode leakage current can be significantly improved again.For identical gate oxide thickness, by high dielectric constant insulating material and metal gates collocation, its gate electrode leakage current will reduce several index magnitudes, and solve problem incompatible between high dielectric constant insulating material and polysilicon with metal gates replacement polygate electrodes.
Please refer to Fig. 1 a ~ 1c, formed device profile schematic diagram in the formation method that it is existing aluminum metal gate.
As shown in Figure 1a, semiconductor structure 10 is provided, described semiconductor structure 10 comprises Semiconductor substrate 11, interlayer dielectric layer 12 and soakage layer 13, wherein, described interlayer dielectric layer 12 is positioned in described Semiconductor substrate 11 and described interlayer dielectric layer 12 has groove 100, described groove 100 exposed portions serve Semiconductor substrate 11, the part semiconductor substrate 11 that described soakage layer 13 covers described interlayer dielectric layer 12 and exposes.
As shown in Figure 1 b, deposition of aluminum Seed Layer 14, described aluminium Seed Layer 14 covers described soakage layer 13, simultaneously filling part groove 100.
As shown in Fig. 1 c, deposition of aluminum body layer 15, described aluminium body layer 15 covers described aluminium Seed Layer 14, fills up described groove 100 simultaneously.
Then, can carry out cmp (CMP) technique, remove soakage layer 13, aluminium Seed Layer 14 and the aluminium body layer 15 on described interlayer dielectric layer 12 surfaces, form aluminum metal gate.In the forming process of whole aluminum metal gate, deposition of aluminum metal level 16(comprises deposition of aluminum Seed Layer 14 and aluminium body layer 15) be crucial, if can form uniform aluminum metal layer 16, fill up groove 100, just the quality of the final aluminum metal gate forming also can be protected.
Just because of this first forms a soakage layer 13 in existing technique, be divided into again two steps simultaneously and form aluminum metal layer 16, its object is all in order to form uniform aluminum metal layer 16.Even but under these circumstances, the aluminum metal layer 16 of filling groove 100 still often there will be cavity 101, thereby cause the Quality Down of the final metal gates forming.Trace it to its cause and be, in the process of deposition of aluminum Seed Layer 14, aluminium Seed Layer 14 can be gathered at the opening part 102 of groove 100, thereby causes the openings get smaller of groove 100; Thus, during subsequent deposition aluminium body layer 15, be difficult to fully, equably groove 100 filled up, thereby cause the generation in cavity 101, and then reduce the quality of metal gates.
Summary of the invention
The object of the present invention is to provide a kind of formation method of aluminum metal gate, to solve in prior art, in the aluminum metal layer of formation aluminum metal gate, be easy to produce cavity, thereby cause the low problem of formed aluminum metal gate reliability.
For solving the problems of the technologies described above, the invention provides a kind of formation method of aluminum metal gate, comprising:
Semiconductor substrate is provided, in described Semiconductor substrate, is formed with interlayer dielectric layer, described interlayer dielectric layer has groove, described groove exposed portions serve Semiconductor substrate;
Form soakage layer, described soakage layer covers described interlayer dielectric layer, fills described groove simultaneously, and wherein, the soakage layer that is positioned at described groove opening place repels the chemical vapor deposition method of aluminium;
Utilize chemical vapor deposition method to form aluminium Seed Layer, described aluminium Seed Layer is filled described groove;
Deposition of aluminum body layer, described aluminium body layer fills up described groove.
Optionally, in the formation method of described aluminum metal gate, the material that is positioned at the soakage layer at described groove opening place is titanium nitride.
Optionally, in the formation method of described aluminum metal gate, the technique that forms soakage layer comprises the steps:
Form initial soakage layer, the material of described initial soakage layer is titanium;
Described initial soakage layer is carried out to nitrogen ion implantation technology, form soakage layer, wherein, the material that is positioned at the soakage layer at groove opening place is titanium nitride, and the material that is positioned at the soakage layer of groove is titanium.
Optionally, in the formation method of described aluminum metal gate, utilize nitrogen to carry out nitrogen ion implantation technology to described initial soakage layer.
Optionally, in the formation method of described aluminum metal gate, the process conditions that described initial soakage layer is carried out to nitrogen ion implantation technology are:
Implant angle: 5 ° ~ 15 °;
Implantation Energy: 1keV ~ 30keV;
Implantation dosage: 10
14/ cm
2~ 10
15/ cm
2.
Optionally, in the formation method of described aluminum metal gate, the thickness of described soakage layer is 4nm～15nm.
Optionally, in the formation method of described aluminum metal gate, utilize AlH
2(BH
4) and N(CH
3)
3carry out chemical vapor deposition method and form aluminium Seed Layer.
Optionally, in the formation method of described aluminum metal gate, the technological temperature that forms aluminium Seed Layer is: 25 ℃ ~ 150 ℃.
Optionally, in the formation method of described aluminum metal gate, utilize aluminium body layer deposited by physical vapour deposition (PVD).
In the formation method of aluminum metal gate provided by the invention, the soakage layer that is positioned at groove opening place repels the chemical vapor deposition method of aluminium, thus, when later use chemical vapor deposition method forms aluminium Seed Layer, described aluminium Seed Layer can not be gathered at groove opening place, thereby while filling up described groove by deposition of aluminum body layer again, can facilitate, reliably described groove be filled up, avoid comprising the generation in cavity in the aluminum metal layer of aluminium Seed Layer and aluminium body layer, thereby can access the aluminum metal gate of high reliability.
Accompanying drawing explanation
Fig. 1 a ~ 1c is formed device profile schematic diagram in the formation method of existing aluminum metal gate;
Fig. 2 is the schematic flow sheet of formation method of the aluminum metal gate of the embodiment of the present invention;
Fig. 3 a ~ 3e is formed device profile schematic diagram in the formation method of aluminum metal gate of the embodiment of the present invention.
Embodiment
The formation method of aluminum metal gate the present invention being proposed below in conjunction with the drawings and specific embodiments is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 2, the schematic flow sheet of the formation method of its aluminum metal gate that is the embodiment of the present invention.As shown in Figure 2, the formation method of described aluminum metal gate specifically comprises:
S20: Semiconductor substrate is provided, is formed with interlayer dielectric layer in described Semiconductor substrate, described interlayer dielectric layer has groove, described groove exposed portions serve Semiconductor substrate;
S21: form soakage layer, described soakage layer covers described interlayer dielectric layer, fills described groove simultaneously, wherein, the soakage layer that is positioned at described groove opening place repels the chemical vapor deposition method of aluminium;
S22: utilize chemical vapor deposition method to form aluminium Seed Layer, described aluminium Seed Layer is filled described groove;
S23: deposition of aluminum body layer, described aluminium body layer fills up described groove.
Core concept of the present invention is, the chemical vapor deposition method of repelling aluminium by making to be positioned at the soakage layer at groove opening place, thus, when later use chemical vapor deposition method forms aluminium Seed Layer, described aluminium Seed Layer can not be gathered at groove opening place, thereby while filling up described groove by deposition of aluminum body layer again, can facilitate, reliably described groove be filled up, avoid comprising the generation in cavity in the aluminum metal layer of aluminium Seed Layer and aluminium body layer, thereby can access the aluminum metal gate of high reliability.
Concrete, please refer to Fig. 3 a ~ 3e, formed device profile schematic diagram in the formation method of its aluminum metal gate that is the embodiment of the present invention.
As shown in Figure 3 a, provide Semiconductor substrate 31, described Semiconductor substrate 31 can be monocrystalline substrate or multicrystalline silicon substrate, can be also silicon-on-insulator (SOI) substrate; In described Semiconductor substrate 31, be formed with interlayer dielectric layer 32, described interlayer dielectric layer 32 has groove 300, described groove 300 exposed portions serve Semiconductor substrate 31.
Concrete, can first in described Semiconductor substrate 31, form pseudo-grid structure; Then form a layer of dielectric material, described layer of dielectric material covers described pseudo-grid structure and Semiconductor substrate; Described layer of dielectric material is carried out to chemical mechanical milling tech, expose described pseudo-grid structure; Then, remove described pseudo-grid structure, thereby form the interlayer dielectric layer 32 with groove 300.
Please continue to refer to Fig. 3 a, then, form high dielectric constant insulating material layer (being high K dielectric layer) 331, described high dielectric constant insulating material layer 331 can be hafnium oxide, hafnium silicon oxide, lanthana, lanthana aluminium, zirconia, zirconium silicon oxide, titanium oxide, tantalum oxide, strontium barium oxide titanium, barium monoxide titanium, strontium oxide strontia titanium, yittrium oxide, aluminium oxide, lead oxide scandium tantalum and lead niobate zinc etc.
Then, on described high dielectric constant insulating material layer 331, form in turn work function layer 332 and barrier layer 333, wherein, the material on described barrier layer 333 can be silicon nitride etc., and by described work function layer 332, can improve the performances such as thermal stability of formed device.
Then, on described barrier layer 333, form initial soakage layer 33 ', preferred, the material of described initial soakage layer 33 ' is titanium (Ti), and in addition, in other embodiments of the invention, the material of described initial soakage layer 33 ' can be also cobalt (Co).Preferably, described initial soakage layer 33 ' forms by physical gas-phase deposition, and its thickness is 4nm ~ 15nm.
Please refer to Fig. 3 b, then, described initial soakage layer 33 ' is carried out to nitrogen ion implantation technology, its thickness of formation soakage layer 33(of take is 4nm ~ 15nm), wherein, the material that is positioned at the soakage layer 33 of groove 300 opening parts is titanium nitride, and the material that is positioned at the soakage layer 33 of groove 300 is titanium.
Concrete, at this, utilize nitrogen to carry out nitrogen ion implantation technology to described initial soakage layer 33 ', preferred, its process conditions are: 5 ° ~ 15 ° of implant angles; Implantation Energy: 1keV ~ 30keV; Implantation dosage: 10
14/ cm
2~ 10
15/ cm
2.In the present embodiment, by above-mentioned nitrogen ion implantation technology, formed soakage layer 33, described soakage layer 33 comprises the first soakage layer 33A and the second soakage layer 33B, the material of described the first soakage layer 33A is titanium nitride, the barrier layer 333 of the barrier layer 333 outside its covering groove 300 and groove 300 opening parts; The material of described the second soakage layer 33B is titanium, the barrier layer 333 of (at this, not comprising opening part in described groove 300) in its covering groove 300.Especially, in the present embodiment, choosing of implant angle by nitrogen ion implantation technology, for groove 300, make substantially only at opening part, to form the titanium nitride of the chemical vapor deposition method repulsion performance with aluminium, without any additional safeguard measure, such as forming protective layer etc. in groove 300 inside, and make groove 300 inside be titanium material (being that nitrogen ion implantation technology does not make a difference for groove 300 inside), thereby the chemical vapor deposition method that makes follow-up aluminium can realize the object of its al deposition, can not block the opening of groove 300 again.
It should be noted that, although the barrier layer 333 of the first soakage layer 33A while covering groove 300 opening parts and the barrier layer 333 outside groove 300 in foregoing description, but, in other specific embodiment of the present invention, described the first soakage layer 33A is the barrier layer 333 of covering groove 300 opening parts only also, for example, carry out in nitrogen ion implantation technology and only the initial soakage layer at groove opening place is bombarded, the titanium material transition that so can make groove opening place be titanium nitride material (and groove in and groove outside titanium material do not change), can realize equally the object that the soakage layer that makes to be positioned at described groove opening place repels the chemical vapor deposition method of aluminium.
Then, please refer to Fig. 3 c, utilize chemical vapor deposition method to form aluminium Seed Layer 34, described aluminium Seed Layer 34 is filled described groove 300.Concrete, utilize AlH
2(BH
4) and N(CH
3)
3(being TMAAB material) carried out chemical vapor deposition method and formed aluminium Seed Layer 34, preferred, and the technological temperature that forms aluminium Seed Layer 34 is 25 ℃ ~ 150 ℃.At this, utilized the selectivity of chemical vapor deposition method to utilize in other words titanium nitride material for chemical vapor deposition method, to form the repulsion performance of aluminium, make described aluminium Seed Layer 34 only cover the second soakage layer 33B, clean (can not make the opening of aluminium Seed Layer 34 closed grooves 300, or the opening size of groove 300 is diminished) that has kept groove 300 opening parts 301.
As shown in Figure 3 d, deposition of aluminum body layer 35, described aluminium body layer 35 fills up described groove 300.Preferably, by physical gas-phase deposition, form described aluminium body layer 35, certainly, in other embodiments of the invention, also can form described aluminium body layer 35 by atom layer deposition process.
At this, by two step depositing operations (deposition forms aluminium Seed Layer 34 and aluminium body layer 35), formed aluminum metal layer 36, due in this two steps depositing operation, the opening clean (without the situation of sealing or opening size diminishes) of groove 300, thereby make aluminum metal layer 36 even, the reliable in quality that form, avoided the generation of cavity blemish.
Then, please refer to Fig. 3 e, carry out chemical mechanical milling tech, to form metal gates 37.At this, by chemical mechanical milling tech, planarization aluminum metal layer 36, removed part high dielectric constant insulating material layer 331, function layer 332, barrier layer 333 and the soakage layer 33 on described interlayer dielectric layer 32 surfaces, formed aluminum metal gate 37.The formed aluminum metal gate 37 of formation method of the aluminum metal gate providing by the present embodiment has been avoided the generation of cavity blemish, has improved product quality.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (9)
1. a formation method for aluminum metal gate, is characterized in that, comprising:
Semiconductor substrate is provided, in described Semiconductor substrate, is formed with interlayer dielectric layer, described interlayer dielectric layer has groove, described groove exposed portions serve Semiconductor substrate;
Form soakage layer, described soakage layer covers described interlayer dielectric layer, fills described groove simultaneously, and wherein, the soakage layer that is positioned at described groove opening place repels the chemical vapor deposition method of aluminium;
Utilize chemical vapor deposition method to form aluminium Seed Layer, described aluminium Seed Layer is filled described groove;
Deposition of aluminum body layer, described aluminium body layer fills up described groove.
2. the formation method of aluminum metal gate as claimed in claim 1, is characterized in that, the material that is positioned at the soakage layer at described groove opening place is titanium nitride.
3. the formation method of aluminum metal gate as claimed in claim 2, is characterized in that, the technique that forms soakage layer comprises the steps:
Form initial soakage layer, the material of described initial soakage layer is titanium;
Described initial soakage layer is carried out to nitrogen ion implantation technology, form soakage layer, wherein, the material that is positioned at the soakage layer at groove opening place is titanium nitride, and the material that is positioned at the soakage layer of groove is titanium.
4. the formation method of aluminum metal gate as claimed in claim 3, is characterized in that, utilizes nitrogen to carry out nitrogen ion implantation technology to described initial soakage layer.
5. the formation method of aluminum metal gate as claimed in claim 4, is characterized in that, the process conditions that described initial soakage layer is carried out to nitrogen ion implantation technology are:
Implant angle: 5 ° ~ 15 °;
Implantation Energy: 1keV ~ 30keV;
Implantation dosage: 10
14/ cm
2~ 10
15/ cm
2.
6. the formation method of the aluminum metal gate as described in any one in claim 2 ~ 5, is characterized in that, the thickness of described soakage layer is 4nm ~ 15nm.
7. the formation method of the aluminum metal gate as described in any one in claim 2 ~ 5, is characterized in that, utilizes AlH
2(BH
4) and N(CH
3)
3carry out chemical vapor deposition method and form aluminium Seed Layer.
8. the formation method of aluminum metal gate as claimed in claim 7, is characterized in that, the technological temperature that forms aluminium Seed Layer is: 25 ℃ ~ 150 ℃.
9. the formation method of the aluminum metal gate as described in any one in claim 2 ~ 5, is characterized in that, utilizes aluminium body layer deposited by physical vapour deposition (PVD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264971.8A CN103578940B (en) | 2012-07-27 | 2012-07-27 | The formation method of aluminum metal gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264971.8A CN103578940B (en) | 2012-07-27 | 2012-07-27 | The formation method of aluminum metal gate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103578940A true CN103578940A (en) | 2014-02-12 |
| CN103578940B CN103578940B (en) | 2016-02-03 |
Family
ID=50050467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210264971.8A Active CN103578940B (en) | 2012-07-27 | 2012-07-27 | The formation method of aluminum metal gate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103578940B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128869A (en) * | 2019-12-26 | 2020-05-08 | 华虹半导体(无锡)有限公司 | Preparation method for optimizing hot aluminum pore-filling capacity |
| CN112736030A (en) * | 2019-10-29 | 2021-04-30 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
| CN113793803A (en) * | 2021-08-19 | 2021-12-14 | 联芯集成电路制造(厦门)有限公司 | Method for manufacturing aluminum metal grid |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010049190A1 (en) * | 1997-02-14 | 2001-12-06 | John H. Givens | Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure |
| US20020031911A1 (en) * | 2000-06-15 | 2002-03-14 | Pyo Sung Gyu | Method of manufacturing a copper metal wiring in a semiconductor device |
| US20030092255A1 (en) * | 2001-11-14 | 2003-05-15 | Ende Shan | Low temperature aluminum planarization process |
| CN101595554A (en) * | 2007-01-17 | 2009-12-02 | 惠普开发有限公司 | Formation runs through the method for the interconnection of substrate |
| CN101924095A (en) * | 2009-06-16 | 2010-12-22 | 南亚科技股份有限公司 | Interconnection structure of semiconductor integrated circuit and method for making the same |
-
2012
- 2012-07-27 CN CN201210264971.8A patent/CN103578940B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010049190A1 (en) * | 1997-02-14 | 2001-12-06 | John H. Givens | Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure |
| US20020031911A1 (en) * | 2000-06-15 | 2002-03-14 | Pyo Sung Gyu | Method of manufacturing a copper metal wiring in a semiconductor device |
| US20030092255A1 (en) * | 2001-11-14 | 2003-05-15 | Ende Shan | Low temperature aluminum planarization process |
| CN101595554A (en) * | 2007-01-17 | 2009-12-02 | 惠普开发有限公司 | Formation runs through the method for the interconnection of substrate |
| CN101924095A (en) * | 2009-06-16 | 2010-12-22 | 南亚科技股份有限公司 | Interconnection structure of semiconductor integrated circuit and method for making the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112736030A (en) * | 2019-10-29 | 2021-04-30 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
| CN111128869A (en) * | 2019-12-26 | 2020-05-08 | 华虹半导体(无锡)有限公司 | Preparation method for optimizing hot aluminum pore-filling capacity |
| CN113793803A (en) * | 2021-08-19 | 2021-12-14 | 联芯集成电路制造(厦门)有限公司 | Method for manufacturing aluminum metal grid |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103578940B (en) | 2016-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Su et al. | Enhancing the high-voltage cycling performance of LiNi0. 5Mn0. 3Co0. 2O2 by retarding its interfacial reaction with an electrolyte by atomic-layer-deposited Al2O3 | |
| Hou et al. | Ultrahigh energy density in SrTiO3 film capacitors | |
| US10541252B2 (en) | Memory arrays, and methods of forming memory arrays | |
| US20180366645A1 (en) | Methods of forming semiconductor structures including multi-portion liners | |
| CN106654004B (en) | Resistance-type memory and its manufacturing method | |
| CN110114879A (en) | Memory heap stack and forming method thereof with silicon oxynitride to gate dielectric layer | |
| CN102810561B (en) | Semiconductor device and manufacture method thereof | |
| CN102347227B (en) | Metal gate formation method | |
| CN102544098A (en) | MOS transistor and forming method thereof | |
| CN105789274A (en) | Metal gate structure and manufacturing method thereof | |
| CN102446726A (en) | Method for forming metal gate | |
| US20120299083A1 (en) | Nonvolatile semiconductor memory device and method of fabricating the same | |
| CN109643716A (en) | Three-dimensional storage equipment and its manufacturing method | |
| CN103578940A (en) | Aluminum metal grid electrode forming method | |
| CN102386081B (en) | Method for forming metal gate | |
| US20160043096A1 (en) | Method for manufacturing a floating gate memory element | |
| TW201234568A (en) | DRAM cell based on conductive nanochannel plate | |
| CN103107074B (en) | A kind of formation method of metal gates | |
| CN102117810A (en) | Charge trapping type nonvolatile memory and manufacturing method thereof | |
| JP2006120848A (en) | Semiconductor device and manufacturing method thereof | |
| CN110391285A (en) | Semiconductor structure and forming method thereof | |
| CN102543698B (en) | Manufacturing method of metal gate electrode | |
| CN103545355A (en) | Semiconductor device and manufacturing method thereof | |
| CN102403264A (en) | Etching method for contact holes of metal grid MOS (metal oxide semiconductor) devices | |
| CN103137458B (en) | The manufacture method of high dielectric layer metal gate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |