CN103576225A - Method for preparing nano cycle optical gratings with adjustable duty ratio by phase mask photoetching - Google Patents
Method for preparing nano cycle optical gratings with adjustable duty ratio by phase mask photoetching Download PDFInfo
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Abstract
The invention discloses a method for preparing nano cycle optical gratings with the adjustable duty ratio by the phase mask photoetching. The method comprises the steps that on the basis that a +/- 1 stage diffraction light phase mask photoetching of a deep ultraviolet exposure light source is utilized for preparing the nano cycle optical gratings, two technical schemes are provided for adjusting the duty ratio of the optical gratings, wherein the cycles of the nano cycle optical gratings are reduced by one half compared with the cycles of a mask plate, one technical scheme is used for adjusting the duty ratio of the optical gratings by changing the exposure dose and the thickness of an adhesive layer, and the other technical scheme is used for adjusting the duty ratio of the optical gratings by adjusting the deposition angle for shielding a settled layer used as an etching mask and combining the reactive ion etching technology. Due to the adjustment of technical and process factors, the optical gratings with the different duty ratios and line widths can be obtained, and therefore the nano cycle optical grating structures with the different duty ratios in different performances and application fields can be obtained. The method is not limited to materials used by the optical gratings and the specific application ranges, is simple, easy to implement, stable and reliable, and has the outstanding technical advantages in the mass production field of the high-performance nano optical gratings.
Description
Technical field
The present invention relates to the preparing technical field of different duty nanometer periodic optical grating.Preparation method is based on the collaborative adjusting of ± 1 level phase mask deep UV lithography photoetching, photoresist layer thickness and exposure dose, the two-way technical methods such as deposition, reactive ion etching that cover.
Background technology
Nanometer periodic optical grating (comprising fiber grating) and technology of preparing thereof have obtained application more and more widely in recent years in integrated photonic device, optical fiber communication, Fibre Optical Sensor and optical information processing field, various advanced persons' technology of preparing and method also develop gradually and should use, and its meta phase mask means has obtained people's favor with its unique advantage.Position phase mask method is lower to the stability requirement of environment, to the coherence of light source, require also lower simultaneously, and likely in write-once process, in several parallel optical fiber, write grating simultaneously, therefore the cost compare of preparing in this way grating is cheap, process stabilizing is reliable, and is easy to produce in enormous quantities industrial.
The nanometer grating that possesses application function, its main physical parameter comprises the profile of grating cycle, the grating degree of depth, grating dutycycle, grating and grating material etc., these parameters are all to the performance of grating and specifically apply important.Technology of preparing and the process of novel advanced person and the reliable and stable nanometer periodic optical grating being formed by various types of materials, and under cycle one stable condition, regulate the dutycycle of grating or line thickness for the optimization of grating performance and the exploitation of new function, to explore its potential using value be all an extremely important and conscientiously possible approach.
Summary of the invention
The object of the present invention is to provide a kind of phase mask lithography to prepare the method for the adjustable nanometer periodic optical grating of dutycycle, can regulate easily dutycycle and the line thickness of grating.
The concrete technical scheme that the present invention adopts is as follows:
Position phase mask lithography is prepared the method for the adjustable nanometer periodic optical grating of dutycycle, comprises the steps:
(1), at the certain thickness deep ultraviolet light-sensitive lacquer of the even spin coating one deck of substrate surface, then through preliminary drying, process;
(2) the surface relief formula quartz grating of choosing some cycles is as photoetching position phase mask used, and the dutycycle of quartz grating is 1:1, is highly 266nm;
(3) utilize wavelength 266nm ultraviolet source as exposure light source, in exposure process, phase mask plate adopts uniform contact mode with the sample surfaces that surface is coated with photoresist, be that the two fits tightly and is unlikely to make the structure of mask plate to embed in sample glue-line, under stabilized lasers output power condition, according to different photoresist layer thickness, by the control of time shutter, accurately control exposure dose, thereby control width and the dutycycle of grating lines;
(4) by wet development process, in certain developer solution, soak after certain hour, obtain the nanometer grating structure of photoresist, in this grating structural parameter, the cycle should be 1/2 of the mask grating cycle;
(5) utilize reactive ion etching process, etched substrate material, the grating sample of acquisition corresponding construction.
The thickness of described photoresist is 10～1000nm, and the cycle of quartz grating is 400-2000nm; The range of adjustment of exposure dose is between 10 * 40～200 * 40mW ﹒ s; The width of grating lines is 10～1980nm.
Further, after the nanometer grating structure that obtains photoresist through above-mentioned steps (4), according to the size of required grating line thickness and dutycycle, continue following steps and revise:
A) utilize mask deposition techniques, by regulating inclined deposition angle: 10 °～89 °, at the photoresist layer upper surface of exposure imaging, with different angle of deposit respectively hydatogenesis metal (as Cr, Au etc.) or oxide (as SiO
2, Si
3n
4deng) as anti-etching barrier film material; Then choose suitable etching parameters, adopt respectively the not protected photoresist layer of reactive ion etching method etching and primer, obtain the nanometer grating structure of different line thickness and dutycycle;
B) utilize O
2plasma reaction etching is not coated with the photoresist layer of film mask, must arrive the photoresist layer optical grating construction that top is coated with the sidewall of mask layer;
C) utilize reactive ion etching method, at the etching gas of setting (as CHF
3deng) with etching condition under, to not being subject to the backing material of above-mentioned photoresist layer protection to carry out etching;
D) select certain formula solution, the etch-resistant layer on above-mentioned sample is lifted off, finally obtain required grating sample.
The present invention proposes two kinds of technical schemes for regulating the dutycycle of prepared grating, the one, by changing exposure dose and bondline thickness, regulate grating dutycycle, the 2nd, the angle of deposit that covers sedimentary deposit the association reaction ion etching technology that by adjusting, are used as etching mask regulate grating dutycycle.By the adjusting of above-mentioned technology factor, can obtain the grating of different duty and line thickness, thereby can obtain the different performance nanometer periodic optical grating structure different from the dutycycle of application.The invention is not restricted to grating material therefor and concrete range of application thereof, and this technical method is simple, reliable and stable, in the production in enormous quantities field of high-performance nano grating, there is outstanding technical advantage.
Accompanying drawing explanation
Fig. 1 is ± 1 order diffraction light position phase mask contact deep UV lithography process schematic representation;
Fig. 2 is photoresist exposure imaging binary model;
Fig. 3 is the process chart of embodiment 2;
Fig. 4 is exposure dose prepared grating Electronic Speculum figure while being 75*40mW*s.
Embodiment
Nanometer periodic optical grating preparation method in the present invention utilizes ± 1 order diffraction light position phase mask contact deep-UV lithography method to carry out, and makes to have the effect that reduces by half in mask grating cycle; Next combines exposure dose and bondline thickness coordinated regulation, and mask deposition techniques and the reactive ion etching method of applied metal or oxide etch-resistant layer, for regulating line thickness and the dutycycle of nanometer grating.Here ± 1 level phase mask means is the sculptured quartz grating position phase mask that utilizes ultraviolet; and take normal incidence mode; guaranteeing substantially to suppress under the prerequisite of zero level and more senior diffraction light; make two isocandela degree only depositing ± 1 order diffraction light carries out interference lithography exposure on photoresist layer, thereby the cycle that obtains on photoresist layer reduces the grating pattern of half compared with mask plate.Typical exposure light source wavelength is 266nm, is to suppress zero level and more senior diffraction light, and the grating height of quartz grating mask used must meet d=λ/(2(n-1)), wherein λ is exposure light source wavelength, the refractive index that n is mask material.For quartz mask, n=1.5, so this mask grating height is d=λ=266nm, at this moment zero level can be inhibited preferably with the diffraction light of more senior time.This technology adopts contact exposure mode, and exposure process as shown in Figure 1.
Utilize the deep ultraviolet light sources such as wavelength 266nm, cycle 400-2000nm, the sculptured quartz grating of dutycycle 1:1 is as mask, and by ± 1 order diffraction light position phase mask lithography technology and contact exposure method, manufacturing cycle is the nanometer periodic optical grating in mask grating cycle 1/2.In exposure process, mask plate has good laminating type with the sample surfaces that surface is coated with photoresist, not only the two is fitted tightly but also be unlikely to make the structure of mask plate to embed in sample glue-line, the conditions of exposure of can reasonablely meet ± 1 level phase mask lithography.
On this basis, regulate with the control line thickness of prepared nanometer grating and the technical scheme of dutycycle and have two kinds: (1) is according to concrete photoresist, utilize its exposure dose, threshold exposure and and photoresist layer thickness between mutual relationship, by coordinated regulation process, prepare the nanometer grating of different line thickness and dutycycle; (2) using anti-reactive ion etching metal or oxidation as etch resistant material, application mask deposition techniques, the anti-etching thin layer of local of preparing photoresist layer surface under different angle of deposit, association reaction ion etching technology, prepares the nanometer grating of different line thickness and dutycycle.
Embodiment 1
According to photoresist exposure imaging binary model (as shown in Figure 2), in exposure process, by the adjusting to exposure dose in certain limit, make different-thickness photoresist layer after exposure and developing, the line thickness of the grating obtaining is different from dutycycle.The adjusting of exposure dose and bondline thickness all will be controlled at certain scope, not so probably can not get the grating pattern that the cycle reduces half.Wherein exposure dose range of adjustment is between 10 * 40～200 * 40mW ﹒ s, and photoresist layer thickness range of adjustment is between 10～1000nm; The prepared grating cycle is 1/2 of the mask grating cycle, and grating line thickness is between 10～1980nm.
Concrete technology step is as follows:
(1), at the certain thickness deep ultraviolet light-sensitive lacquer of the even spin coating one deck of substrate surface, then through preliminary drying, process.
(2) the surface relief formula quartz grating of choosing some cycles is as photoetching position phase mask used.
(3) adopt uniform contact mode to expose with 266nm coherent source, under stabilized lasers output power condition, by the control of time shutter, accurately control exposure dose.
(4) when different photoresist layer thickness, control the different time shutter, control different exposure doses.
(5) by wet development process, in certain developer solution, soak after certain hour, obtain the nanometer grating structure of photoresist.In this grating structural parameter, the cycle should be 1/2 of the mask grating cycle, and grating lines and dutycycle are determined by above-mentioned technological factor.
(6) utilize reactive ion etching process, etched substrate material, the grating sample of acquisition corresponding construction.
The AZ1500 photoresist that is 240nm in the even spin coating a layer thickness of silicon chip surface, with 110 ℃ of bakings 1 minute; Utilize the cycle to be about 266nm quartz grating as phase mask plate for 550nm, the degree of depth, by contact exposure mode, utilize the deep ultraviolet laser bundle that wavelength is 266nm, its stable output power is 40mW, and photoresist is exposed, and the time shutter is 75 seconds; Then develop 6 seconds, obtain the optical grating construction of photoresist as shown in Figure 4, its cycle is about 260nm left and right.Therefore as seen from the figure, after exposure dose increases gradually, the dutycycle of grating reduces gradually, has realized the target of utilizing the change of exposure dose to regulate dutycycle.And if increase exposure dose within the scope of this, that by the grating in resulting two 275nm cycles out of 550nm periodic optical grating, is divided more opens.
Embodiment 2
Utilize mask deposition techniques, by regulating inclined deposition angle, at the photoresist layer upper surface of exposure imaging, with different angle of deposit hydatogenesis technology metal or sull respectively; Then choose suitable etching parameters, adopt respectively reactive ion etching method etching not to be subject to photoresist layer and the primer of etch-resistant layer protection, obtain the nanometer grating structure of different line thickness and dutycycle.Inclined deposition angle: between 10 °～89 °, control sedimentary deposit in the lip-deep deposition region of glue-line, for regulating and controlling width and the dutycycle thereof of grating lines after etching; For different photoresist layers and primer kind, select suitable metal or oxide as sedimentary deposit material, and its thicknesses of layers is depending on bondline thickness to be etched or bottom grating height.
Concrete technical scheme and processing step following (process chart is as shown in Figure 3):
(1), at the certain thickness deep ultraviolet light-sensitive lacquer of the even spin coating one deck of substrate surface, then through preliminary drying, process.
(2) the surface relief formula quartz grating of choosing some cycles is as photoetching position phase mask used.
(3) adopt uniform contact mode to expose with 266nm coherent source, under stabilized lasers output power condition, by the control of time shutter, accurately control exposure dose.
(4) by wet development process, in certain developer solution, soak after certain hour, obtain the nanometer periodic optical grating structure of photoresist layer.
(5) selected inclined deposition angle, utilizes the electron beam evaporation method certain thickness anti-etching film of twice evaporation deposition respectively.
(6) application O
2plasma reaction etching is not subject to the photoresist layer of above-mentioned etch-resistant layer protection, obtains required photoresist layer optical grating construction.
(7) utilize reactive ion etching process, to not being subject to the backing material of above-mentioned etch-resistant layer and photoresist protection to carry out reactive ion etching, obtain the nanometer grating sample of corresponding desired structure parameter.
(8) by glue-line, lift off technological process, remove photoresist and lip-deep etch-resistant layer thereof.
Claims (3)
1. a phase mask lithography is prepared the method for the adjustable nanometer periodic optical grating of dutycycle, it is characterized in that, comprises the steps:
(1), at the certain thickness deep ultraviolet light-sensitive lacquer of the even spin coating one deck of substrate surface, then through preliminary drying, process;
(2) the surface relief formula quartz grating of choosing some cycles is as photoetching position phase mask used, and the dutycycle of quartz grating is 1:1, is highly 266nm;
(3) utilize wavelength 266nm ultraviolet source as exposure light source, in exposure process, phase mask plate adopts uniform contact mode with the sample surfaces that surface is coated with photoresist, be that the two fits tightly and is unlikely to make the structure of mask plate to embed in sample glue-line, under stabilized lasers output power condition, according to different photoresist layer thickness, by the control of time shutter, accurately control exposure dose, thereby control width and the dutycycle of grating lines;
(4) by wet development process, in certain developer solution, soak after certain hour, obtain the nanometer grating structure of photoresist, in this grating structural parameter, the cycle should be 1/2 of the mask grating cycle;
(5) utilize reactive ion etching process, etched substrate material, the grating sample of acquisition corresponding construction.
2. according to claim 1 phase mask lithography prepared the method for the adjustable nanometer periodic optical grating of dutycycle, it is characterized in that, the thickness of described photoresist is 10～1000nm, and the cycle of quartz grating is 400-2000nm; The range of adjustment of exposure dose is between 10 * 40～200 * 40mW ﹒ s; The width of described grating lines is 10～1980nm.
3. according to claim 1 and 2 phase mask lithography prepared the method for the adjustable nanometer periodic optical grating of dutycycle, it is characterized in that, after the nanometer grating structure that obtains photoresist through step (4), according to the size of required grating line thickness and dutycycle, continue following steps and revise:
A) utilize mask deposition techniques, by regulating inclined deposition angle: 10 °～89 °, at the photoresist layer upper surface of exposure imaging, using different angle of deposit respectively hydatogenesis metal or oxide as anti-etching barrier film material; Then choose suitable etching parameters, adopt respectively the not protected photoresist layer of reactive ion etching method etching and primer, obtain the nanometer grating structure of different line thickness and dutycycle;
B) utilize O
2plasma reaction etching is not coated with the photoresist layer of film mask, must arrive the photoresist layer optical grating construction that top is coated with the sidewall of mask layer;
C) utilize reactive ion etching method, under the etching gas of setting and etching condition, to not being subject to the backing material of above-mentioned photoresist layer protection to carry out etching;
D) select certain formula solution, the etch-resistant layer on above-mentioned sample is lifted off, finally obtain required grating sample.
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| CN107272098A (en) * | 2017-06-02 | 2017-10-20 | 中国科学技术大学 | Suppress the near-field holography dynamic exposure method of phase-only pupil filter vertical raster direction vector secondary disturbances |
| CN108181722A (en) * | 2016-07-24 | 2018-06-19 | 哈尔滨理工大学 | A kind of duty ratio method for continuously adjusting |
| CN109677176A (en) * | 2018-12-17 | 2019-04-26 | 佛山市易晟达科技有限公司 | A kind of pad pasting cover board and its manufacturing method |
| CN109863446A (en) * | 2016-08-22 | 2019-06-07 | 奇跃公司 | Nanometer method and apparatus |
| CN112782795A (en) * | 2021-01-29 | 2021-05-11 | 鲁东大学 | Method for preparing submicron grating with half period |
| CN113841072A (en) * | 2019-03-27 | 2021-12-24 | 尤利塔股份公司 | Method and apparatus for printing periodic patterns with varying aspect ratios |
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| CN108181722B (en) * | 2016-07-24 | 2020-03-06 | 哈尔滨理工大学 | Duty ratio continuous adjusting method |
| CN109863446B (en) * | 2016-08-22 | 2021-06-25 | 奇跃公司 | Nanometric methods and devices |
| US11822112B2 (en) | 2016-08-22 | 2023-11-21 | Magic Leap, Inc. | Projector architecture incorporating artifact mitigation |
| CN109863446A (en) * | 2016-08-22 | 2019-06-07 | 奇跃公司 | Nanometer method and apparatus |
| CN107272098B (en) * | 2017-06-02 | 2020-01-03 | 中国科学技术大学 | Near-field holographic dynamic exposure method for inhibiting secondary interference in vertical grating vector direction |
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| CN115097559A (en) * | 2018-01-09 | 2022-09-23 | 瓦里安半导体设备公司 | System for generating angled grating and method for forming diffractive optical element with variable grating |
| CN115097559B (en) * | 2018-01-09 | 2024-03-12 | 瓦里安半导体设备公司 | System for generating angled grating and method for forming diffraction optical element with variable grating |
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| CN112782795B (en) * | 2021-01-29 | 2022-06-07 | 鲁东大学 | Method for preparing submicron grating with half period |
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| CN116931148B (en) * | 2023-09-15 | 2023-12-15 | 北京至格科技有限公司 | Grating mask and preparation method of grating |
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