CN103572350B - A kind of oxide-film of consistency of thickness forms technology - Google Patents
A kind of oxide-film of consistency of thickness forms technology Download PDFInfo
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- CN103572350B CN103572350B CN201210278802.XA CN201210278802A CN103572350B CN 103572350 B CN103572350 B CN 103572350B CN 201210278802 A CN201210278802 A CN 201210278802A CN 103572350 B CN103572350 B CN 103572350B
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Abstract
The oxide-film formation technology that the invention discloses a kind of consistency of thickness, comprising: (1) is put the tantalum anode piece through oversintering to be welded on conductiving metal strip equably; (2) support that places conductiving metal strip is put into electrolytic cell; (3) with " king " font lead frame of wire producing; (4) be placed on support and be welded with the bonding jumper close contact of tantalum anode piece with point overlapping " king " word lead frame; (5) positive source is received to the center of " king " word lead frame, power cathode is connected with electrolytic cell; (6) carry out deielectric-coating formation processing after switching on power. The invention has the beneficial effects as follows: utilize wire producing lead frame, effectively reduce power output end to the pressure reduction between valve metal anode briquet, ensure to be applied to the voltage on anode briquet, simultaneously, apply electric current from the terminals of " king " font lead frame central shaft, make electric current lead to the path of each side identical, electric-field intensity is even, has ensured to generate the consistency of thickness of oxide-film.
Description
Technical field
The present invention relates to a kind of oxide-film formation technology of consistency of thickness, belong to metal surface coating technique neckTerritory.
Background technology
Tantalum electrolytic capacitor is to be drawn, insulated by tantalum sintered anode, dielectric, catholyte, both positive and negative polarityOvercoat composition, dielectric is the tantalum pentoxide film of growing nonparasitically upon another plant on tantalum particle surface. At present, tantalum capacitorDielectric preparation technology be after tantalum anode piece point is welded in assistant metal bar and be placed on support, will prop upFrame is placed in the electrolytic cell that fills electrolyte, and support is connected with the positive pole of power supply, power cathode and electrolysisGroove is connected, and tantalum anode piece is reacted with electrolyte under electric field action, forms five oxygen on tantalum particle surfaceChange two tantalum film layers. Because being connected of positive source and support, negative pole are all connections with being connected of electrolytic cell,Electric Field Distribution in electrolytic cell be by by force to weak distribution, be the trend that surrounding is successively decreased to center. So, from, first there is electrochemical reaction in the anode tantalum piece that tie point is nearer, near inner hysteresis, along with the timePass, the variable thickness of the tantalum pentoxide deielectric-coating of formation causes, and finally affects the qualification rate of product.
Summary of the invention
The object of the present invention is to provide a kind of oxide-film being uniformly distributed the consistency of thickness forming in electric fieldFormation method.
The object of the invention is to be achieved through the following technical solutions: a kind of oxide-film of consistency of thickness formsTechnology, it comprises the following steps:
(1) the tantalum anode piece through oversintering is put and is welded on conductiving metal strip equably, then by conductive goldBelonging to bar is placed on support successively;
(2) support that places conductiving metal strip is put into electrolytic cell, in electrolytic cell, fill with in advance configurationThe electrolyte of putting;
(3) with " king " font lead frame of wire producing, the size of electric wire frame and support sizableness,The center of " king " word lead frame is power supply wiring point;
(4) be placed on support and be welded with the bonding jumper of tantalum anode piece with point overlapping " king " word lead frameClose contact;
(5) positive source is received to the center of " king " word lead frame, power cathode and electrolytic cell connectConnect;
(6) carry out deielectric-coating formation processing after switching on power.
Described electrolyte is that volumetric concentration is 0.1% phosphoric acid solution.
The beneficial effect of the inventive method is: utilize wire producing lead frame, effectively reduced power supply outputEnd, to the pressure reduction between valve metal anode briquet, has ensured to be applied to the voltage on anode briquet, meanwhile, fromThe terminals of " king " font lead frame central shaft apply electric current, make electric current lead to the path of each side identical, electricityField intensity is even, has ensured to generate the consistency of thickness of oxide-film.
Detailed description of the invention
Further describe technical scheme of the present invention below in conjunction with embodiment, but not office of claimed scopeDescribed in being limited to.
The oxide-film of consistency of thickness forms a technology, and it comprises the following steps:
(1) the tantalum anode piece through oversintering is put and is welded on conductiving metal strip equably, then by conductive goldBelonging to bar is placed on support successively;
(2) support that places conductiving metal strip is put into electrolytic cell, in electrolytic cell, fill with in advance configurationThe electrolyte of putting;
(3) with " king " font lead frame of wire producing, the size of electric wire frame and support sizableness,The center of " king " word lead frame is power supply wiring point;
(4) be placed on support and be welded with the bonding jumper of tantalum anode piece with point overlapping " king " word lead frameClose contact;
(5) positive source is received to the center of " king " word lead frame, power cathode and electrolytic cell connectConnect;
(6) carry out deielectric-coating formation processing after switching on power.
Described electrolyte is that volumetric concentration is 0.1% phosphoric acid solution.
After finishing according to oxide-film formation technology formation of the present invention, randomly draw 5 anode blocks and be oxidizedFilm thickness test, each tantalum piece is tested respectively five different points, and oxide thickness test data is in table 1.
Oxide thickness test data after table one the present invention forms
And table 2 is for after having formed by existing technique, also randomly draws 5 anode blocks and carry out oxide thickness surveyExamination, each tantalum piece is tested respectively five different points, and wherein, anode tantalum piece and embodiment anode tantalum piece areWith a collection of, spacing distance, electricity between steel bar quantity, steel bar on steel bar on spot welding anode block quantity, supportSeparate liquid, formation voltage and formation electric current etc. all identical.
Oxide thickness test data after the existing technique of table two forms
Can obviously be found out by table one, table two, the oxide thickness in table one is even, i.e. after the present invention formsOxide thickness, but oxide thickness in table two is inhomogeneous, same tantalum piece even same point all canThere is larger difference.
This technical method is also applicable to the manufacture of the valve metal electrolytic capacitor anodized films such as titanium, aluminium, niobium.
Claims (2)
1. an oxide film forming method for consistency of thickness, is characterized in that: it comprises the following steps:
(1) the tantalum anode piece through oversintering is put and is welded on conductiving metal strip equably, then by conductiving metal stripBe placed in successively on support;
(2) support that places conductiving metal strip is put into electrolytic cell, in electrolytic cell, fill with in advance and to configureElectrolyte;
(3) with " king " font lead frame of wire producing, the size of lead frame and support sizableness, " king "The center of font lead frame is power supply wiring point;
(4) be placed on support and to be welded with the bonding jumper of tantalum anode piece tight with point overlapping " king " font lead frameConnect airtight tactile;
(5) positive source is received to the center of " king " font lead frame, power cathode is connected with electrolytic cell;
(6) carry out deielectric-coating formation processing after switching on power.
2. the oxide film forming method of consistency of thickness according to claim 1, is characterized in that: describedElectrolyte is that volumetric concentration is 0.1% phosphoric acid solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210278802.XA CN103572350B (en) | 2012-08-07 | 2012-08-07 | A kind of oxide-film of consistency of thickness forms technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210278802.XA CN103572350B (en) | 2012-08-07 | 2012-08-07 | A kind of oxide-film of consistency of thickness forms technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103572350A CN103572350A (en) | 2014-02-12 |
| CN103572350B true CN103572350B (en) | 2016-05-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210278802.XA Active CN103572350B (en) | 2012-08-07 | 2012-08-07 | A kind of oxide-film of consistency of thickness forms technology |
Country Status (1)
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489648A (en) * | 2013-10-16 | 2014-01-01 | 中国振华（集团）新云电子元器件有限责任公司 | Method for improving thickness uniformity of dielectric oxide film on electrolytic capacitor anode block |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4090231A (en) * | 1973-07-05 | 1978-05-16 | Sprague Electric Company | Screen printed solid electrolytic capacitor |
| CN1767102A (en) * | 2005-11-16 | 2006-05-03 | 中国振华（集团）新云电子元器件有限责任公司 | Electrolytic capacitor dielectric oxide film manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060091020A1 (en) * | 2004-10-29 | 2006-05-04 | Medtronic, Inc. | Processes and systems for formation of high voltage, anodic oxide on a valve metal anode |
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2012
- 2012-08-07 CN CN201210278802.XA patent/CN103572350B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4090231A (en) * | 1973-07-05 | 1978-05-16 | Sprague Electric Company | Screen printed solid electrolytic capacitor |
| CN1767102A (en) * | 2005-11-16 | 2006-05-03 | 中国振华（集团）新云电子元器件有限责任公司 | Electrolytic capacitor dielectric oxide film manufacturing method |
Non-Patent Citations (3)
| Title |
|---|
| "固体钽电解电容器的关键制造工艺研究";高丽玲;《科技视界》;20120205;83-84 * |
| "有机片式固体钽电解电容器工艺优化与性能研究";陈光铧;《中国优秀硕士学位论文全文数据库工程科技II辑》;20110315;C042-192 * |
| "高频低ESR片式有机钽电解电容器优化设计及性能研究";杨文耀;《中国优秀硕士学位论文全文数据库工程科技II辑》;20111215;C042-171 * |
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| CN103572350A (en) | 2014-02-12 |
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