CN103572212A - Transparent conducting film and preparation method thereof - Google Patents
Transparent conducting film and preparation method thereof Download PDFInfo
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- CN103572212A CN103572212A CN201210267043.7A CN201210267043A CN103572212A CN 103572212 A CN103572212 A CN 103572212A CN 201210267043 A CN201210267043 A CN 201210267043A CN 103572212 A CN103572212 A CN 103572212A
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Abstract
The invention belongs to the field of semiconductor photoelectric materials, and discloses a transparent conducting film and a preparation method thereof. The conducting film comprises a SnO2 layer for buffering and matching, a Cu layer for conduction, and a ReO3 layer for a high work function, and the SnO2 layer, the Cu layer, and the ReO3 layer form a SnO2-Cu-ReO3 sandwich structure. The transparent conducting film provided by the invention is a three-layer anode film of the SnO2-Cu-ReO3 sandwich structure; the first SnO2 layer has certain conductivity, and plays a role of a matching layer; the intermediate Cu layer mainly plays a role of conduction; the outer ReO3 layer has a high surface work function, and can match energy levels of other functional layers of the device; the film has a sheet resistance of as low as 8 ohms per square, has a visible light transmittance of 92%, and has a surface work function of 6.1 eV.
Description
Technical field
The present invention relates to photoelectric semiconductor material field, relate in particular to a kind of transparent conductive film and preparation method thereof.
Background technology
Transparent conductive film is optical clear performance and conductivity to be compounded in to the photoelectric material of one, because it has excellent photoelectric characteristic, becomes study hotspot and advanced subject in recent years, can be widely used in solar cell, LED, TFT, the screen display fields such as LCD and touch-screen.The raising requiring along with device performance, also improves requiring for the performance of the nesa coating as device anode.Except keeping high visible transmitance, low resistivity, also requiring has higher surface work function, and the energy level of its and other functional layer is matched, and reduces potential barrier, and raising Carrier Injection Efficiency, finally reaches high electrical efficiency.
Current business-like various transparent conductive films, as, mix the oxide compound tin (ITO) of indium, the zinc oxide (AZO) of mixing aluminium, the stannic oxide (ATO) of mixing antimony and super thin metal film etc., its light transmission rate, electroconductibility and surface work function are all lower.
Summary of the invention
Based on the problems referred to above, the invention provides a kind of transparent conductive film, this film plays conductive anode effect.
Technical scheme of the present invention is as follows:
, comprise the SnO as buffering and matching effect
2layer, as the Cu layer of electric action, and as the ReO of high work content effect
3layer; And SnO
2layer, Cu layer and ReO
3layer forms SnO
2-Cu-ReO
3sandwich structure; SnO
2layer, Cu layer and ReO
3the thickness of layer is respectively 30 ~ 100nm, 5 ~ 50nm and 0.5 ~ 5nm.
In described transparent conductive film, preferably, described SnO
2layer, Cu layer and ReO
3the thickness of layer is respectively 80nm, 25nm and 2nm.
The present invention also provides the preparation method of above-mentioned transparent conductive film, comprises the steps:
S1, substrate (as, quartz plate, monocrystalline silicon piece or sapphire), SnO
2, Cu and ReO
3put into respectively four molybdenum boats of evaporated device vacuum chamber, and vacuum chamber is vacuumized;
S2, prepare transparent conductive film: first, control velocity of evaporation is 1 ~ 50nm/min, at substrate surface, preparing thickness is 30～100nm and the SnO that plays buffering and matching effect
2layer; Then, control velocity of evaporation is 0.5 ~ 20nm/min, at SnO
2it is 5 ~ 50nm and the Cu layer that plays electric action that thickness is prepared on layer surface; Finally, control velocity of evaporation is 0.1 ~ 10nm/min, and on Cu layer surface, preparing thickness is 0.5 ~ 5nm and the ReO that plays high work content effect
3layer; After end of processing to be deposited, make SnO
2-Cu-ReO
3the transparent conductive film of sandwich structure.
The preparation method of described transparent conductive film, in step S1, vacuum chamber is vacuumized and adopts mechanical pump and molecular pump to carry out, and the vacuum tightness of vacuum chamber is evacuated to 1.0 * 10
-3pa ~ 1.0 * 10
-6pa; Preferably vacuum tightness is evacuated to 2.0 * 10
-4pa.
The preparation method of described transparent conductive film, in step S2, at preparation SnO
2during layer, vaporator rate is 10nm/min; When preparation Cu layer, vaporator rate is 3nm/min; At preparation ReO
3during layer, vaporator rate is 0.3nm/min.
Transparent conductive film provided by the invention is SnO
2-Cu-ReO
3three layers of anode film of sandwich structure, the first layer SnO
2layer has certain electroconductibility, and plays a part matching layer, and middle Cu layer plays main electric action, outer ReO
3there is higher surface work function, mate with the energy level of other functional layers of device; And the square resistance of this film is low to moderate 13 Ω/mouths, and visible light transmissivity reaches 90%, surface work function 6.2eV, can be used as the anode of the devices such as organic electroluminescent device OLED, organic solar batteries.
What the present invention used is that pressure decatizing electroplating method is prepared three level stack formula SnO
2-Cu-ReO
3transparent conductive film, method is simple, and technique is easily controlled, and can combine with follow-up organic materials evaporation process, and efficiency is higher.
Accompanying drawing explanation
Fig. 1 is the light transmission rate test curve figure that embodiment 1 makes transparent conductive film; Use ultraviolet-visible pectrophotometer to test, test wavelength 300 ~ 800nm.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
Quartz plate, SnO
2, Cu and ReO
3four molybdenum boats putting into respectively evaporated device, are evacuated to 2.0 * 10 with mechanical pump and molecular pump the vacuum tightness of cavity
-4pa, successively evaporation SnO
2, Cu film and ReO
3film, its vaporator rate is respectively 10nm/min, 3nm/min, 0.3nm/min, makes the SnO that thickness is respectively 80nm, 25nm and 2nm
2-Cu-ReO
3sandwich structure transparent conductive film, the square resistance of this film is 13 Ω/mouths, visible ray average transmittances is 90%, surface work function 6.2eV.
Fig. 1 is the light transmission rate test curve figure that embodiment 1 makes transparent conductive film; Use ultraviolet-visible pectrophotometer to test, test wavelength 300 ~ 800nm.
As shown in Figure 1, at visible ray 470 ~ 790nm wavelength region average transmittances, reach 90%.
Embodiment 2
Monocrystalline silicon piece, SnO
2, Cu and ReO
3four molybdenum boats putting into respectively evaporated device, are evacuated to 1.0 * 10 with mechanical pump and molecular pump the vacuum tightness of cavity
-3pa, successively evaporation SnO
2, Cu film and ReO
3film, its vaporator rate is respectively 1nm/min, 20nm/min, 0.1nm/min, makes thickness and is respectively 30nm, 50nm, the SnO of 0.5nm
2-Cu-ReO
3sandwich structure transparent conductive film, the square resistance of this film is 9 Ω/mouths, visible ray average transmittances is 80%, surface work function 5.9eV.
Embodiment 3
Sapphire, SnO
2, Cu and ReO
3four molybdenum boats putting into respectively evaporated device, are evacuated to 1.0 * 10 with mechanical pump and molecular pump the vacuum tightness of cavity
-6pa, successively evaporation SnO
2, Cu film and ReO
3film, its vaporator rate is respectively 50nm/min, 0.5nm/min, 10nm/min, makes thickness and is respectively 100nm, 5nm, the SnO of 5nm
2-Cu-ReO
3sandwich structure transparent conductive film, the square resistance of this film is 32 Ω/mouths, visible ray average transmittances is 91%, surface work function 6.0eV.
Table 1 is that commercial ito thin film (comparative example 1 ~ 3) makes conductive film the performance test results with embodiment 1 ~ 3; As can be seen from Table 1, under identical resistance and light transmission rate, the SnO that embodiment 1 ~ 3 makes
2-Cu-ReO
3the surface work function of film, all higher than commercial ITO, has very large performance advantage.
Table 1
| Thin film layer and thickness thereof | Square resistance | Light transmission rate | Surface work function | |
| Embodiment 1 | SnO 2(80nm)-Cu(25nm)-ReO 3(2nm) | 13 Ω/mouths | 90% | 6.2eV |
| Embodiment 2 | SnO 2(30nm)-Cu(50nm)-ReO 3(0.5nm) | 9 Ω/ |
80% | 5.9eV |
| Embodiment 3 | SnO 2(100nm)-Cu(5nm)-ReO 3(5nm) | 32 Ω/mouths | 91% | 6.0eV |
| Comparative example 1 | ITO(70nm) | 32 Ω/mouths | 91% | 4.7eV |
| Comparative example 2 | ITO(150nm) | 13 Ω/mouths | 90% | 4.7eV |
| Comparative example 3 | ITO(220nm) | 9 Ω/ |
80% | 4.8eV |
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (9)
1. a transparent conductive film, is characterized in that, this conductive film comprises the SnO as buffering and matching effect
2layer, as the Cu layer of electric action, and as the ReO of high work content effect
3layer; And SnO
2layer, Cu layer and ReO
3layer forms SnO
2-Cu-ReO
3sandwich structure; SnO
2layer, Cu layer and ReO
3the thickness of layer is respectively 30 ~ 100nm, 5 ~ 50nm and 0.5 ~ 5nm.
2. transparent conductive film according to claim 1, is characterized in that, described SnO
2layer, Cu layer and ReO
3the thickness of layer is respectively 80nm, 25nm and 2nm.
3. a preparation method for transparent conductive film, is characterized in that, comprises the steps:
S1, substrate, SnO
2, Cu and ReO
3put into respectively four molybdenum boats of evaporated device vacuum chamber, and vacuum chamber is vacuumized;
S2, prepare transparent conductive film: first, control velocity of evaporation is 1 ~ 50nm/min, at substrate surface, preparing thickness is 30 ~ 100nm and the SnO that plays buffering and matching effect
2layer; Then, control velocity of evaporation is 0.5 ~ 20nm/min, at SnO
2it is 5 ~ 50nm and the Cu layer that plays electric action that thickness is prepared on layer surface; Finally, control velocity of evaporation is 0.1 ~ 10nm/min, and on Cu layer surface, preparing thickness is 0.5 ~ 5nm and the ReO that plays high work content effect
3layer; After end of processing to be deposited, make SnO
2-Cu-ReO
3the transparent conductive film of sandwich structure.
4. the preparation method of transparent conductive film according to claim 3, is characterized in that, in step S1, vacuum chamber is vacuumized and adopts mechanical pump and molecular pump to carry out, and the vacuum tightness of vacuum chamber is evacuated to 1.0 * 10
-3pa ~ 1.0 * 10
-6pa.
5. the preparation method of transparent conductive film according to claim 4, is characterized in that, in step S1, the vacuum tightness of vacuum chamber is evacuated to 2.0 * 10
-4pa.
6. the preparation method of transparent conductive film according to claim 3, is characterized in that, in step S2, at preparation SnO
2during layer, vaporator rate is 10nm/min.
7. the preparation method of transparent conductive film according to claim 3, is characterized in that, in step S2, when preparation Cu layer, vaporator rate is 3nm/min.
8. the preparation method of transparent conductive film according to claim 3, is characterized in that, in step S2, at preparation ReO
3during layer, vaporator rate is 0.3nm/min.
9. according to the preparation method of the arbitrary described transparent conductive film of claim 3 to 8, it is characterized in that, described substrate is quartz plate, monocrystalline silicon piece or sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210267043.7A CN103572212A (en) | 2012-07-30 | 2012-07-30 | Transparent conducting film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210267043.7A CN103572212A (en) | 2012-07-30 | 2012-07-30 | Transparent conducting film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103572212A true CN103572212A (en) | 2014-02-12 |
Family
ID=50044910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210267043.7A Pending CN103572212A (en) | 2012-07-30 | 2012-07-30 | Transparent conducting film and preparation method thereof |
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|---|---|
| CN (1) | CN103572212A (en) |
-
2012
- 2012-07-30 CN CN201210267043.7A patent/CN103572212A/en active Pending
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Application publication date: 20140212 |