CN103560210B - Frit-deposition method and apparatus - Google Patents
Frit-deposition method and apparatus Download PDFInfo
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- CN103560210B CN103560210B CN201310463976.8A CN201310463976A CN103560210B CN 103560210 B CN103560210 B CN 103560210B CN 201310463976 A CN201310463976 A CN 201310463976A CN 103560210 B CN103560210 B CN 103560210B
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- frit
- sintering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/02—Other methods of shaping glass by casting molten glass, e.g. injection moulding
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/20—Uniting glass pieces by fusing without substantial reshaping
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
A kind of frit-deposition method, including: heated frit is to molten condition；Molten glass material is poured in mould and shapes and cool down；And by the frit-sintered of cooling on the glass substrate.Above-mentioned frit-deposition method and apparatus, makes frit moulding by mould, then by frit-sintered on the glass substrate, it is to avoid addition Organic substance, it is ensured that crackle will not occur due to residual organic matter in frit.
Description
Technical field
The present invention relates to device encapsulation field, particularly relate to frit-deposition method and apparatus.
Background technology
The encapsulation of Organic Light Emitting Diode is to install on the glass substrate by OLED chip, above cover glass
Cover plate, utilizes frit-sealed between two glass plates, stop that water and oxygen enter device inside and corrodes core
Sheet.
Traditional frit-deposition method is first glass dust and organic solvent to be configured to pasty state frit blends,
Use screen printing technique, glass cover-plate is formed required frit figure, and by presintering work
Skill burn off Organic substance, forms the frit of solidification, then passes through laser sintering process and be provided with OLED after cooling
The glass substrate of chip is closed.
During whole, by the glass paste pattern of silk screen printing be easily subject to scraper dynamics, speed,
Multiple external environmental interference such as angle, wayward, and it is likely to be due in frit organic in sintering process
Thing burnout the most completely so that follow-up laser sintered time frit crack, do not reach air-tightness requirement.
Summary of the invention
Based on this, it is necessary to the problem cracked for residual organic matter, it is provided that a kind of frit-deposition side
Method.
A kind of frit-deposition method, including: heated frit is to molten condition；By described molten condition glass
Glass material is poured in mould and shapes and cool down；And by the frit-sintered of described cooling on the glass substrate.
Wherein in an embodiment, by the frit-sintered concrete grammar on the glass substrate of described cooling it is
Laser sintered.
Wherein in an embodiment, described frit is poured in mould and also includes before forming steps: root
According to predetermined pattern, mold shape is set.
Wherein in an embodiment, frit components is: 25～the Na of 45%2The Al of O, 10～37%2O3、
25～the B of 50%2O3, 10～the Co of 20%2O3。
Wherein in an embodiment, frit components is: the Na of 35%2O, the Al of 12%2O3, the B of 40%2O3、
The Co of 13%2O3。
There is a need to propose a kind of frit-deposition equipment, including: heater, for frit is heated
To molten condition；Mould, shape described frit；Sintering equipment, by described after described frit cools down
Frit-sintered is deposited on predeterminated position.
Wherein in an embodiment, sintering equipment is laser aid.
Wherein in an embodiment, sintering equipment is laser aid.
Wherein in an embodiment, frit components is: 25～the Na of 45%2The Al of O, 10～37%2O3、
25～the B of 50%2O3, 10～the Co of 20%2O3。
Wherein in an embodiment, frit components is: the Na of 35%2O, the Al of 12%2O3, the B of 40%2O3、
The Co of 13%2O3。
Above-mentioned frit-deposition method and apparatus, makes frit moulding by mould, then by frit-sintered
On the glass substrate, it is to avoid addition Organic substance, it is ensured that frit will not occur due to residual organic matter splitting
Stricture of vagina.
The frit used does not contains toxic component, environment-protecting clean, and has low melting point, low CTE match system
The advantages such as number, can reach preferably packaging effect during follow-up sintering.
Accompanying drawing explanation
Fig. 1 is frit-deposition method flow diagram；
Fig. 2 is frit-deposition method flow diagram in a kind of embodiment；
Fig. 3 is frit-deposition method flow diagram in another kind of embodiment；
Fig. 4 is cool-down method flow chart in Fig. 3；
Fig. 5 is frit experimental data figure；
Fig. 6 is frit-deposition equipment schematic diagram；
Fig. 7 is frit-deposition equipment schematic diagram in a kind of embodiment；
Fig. 8 is the structural representation of heat sink in Fig. 7；
Fig. 9 is heat preservation module axonometric chart in Fig. 7.
Detailed description of the invention
The present invention proposes a kind of frit-deposition method, with reference to Fig. 1, comprises the following steps:
Step S20, heated frit is to molten condition.
Specifically, frit raw material is glass dust, is ready to by base glass powder, is placed into resistant to elevated temperatures appearance
In device, such as crucible, heat in being then placed into high temperature furnace, until glass melting, reaching can be certainly
By the molten condition flowed.
Step S40, is poured into frit in mould and shapes and cool down.
Being injected in mould by free flowable melten glass material, and wait until cooling, after cooling, frit is formed
Has effigurate solid.Cooling means can be to wait for frit natural cooling, it is also possible to is to pass through water
Cold, air-cooled method cooling.
It is to be understood that this mould can be additionally used in the shaping to glass paste, this glass paste can be above-mentioned
High temperature molten glass material, it is also possible to be the mixing liquid of the frit under room temperature and organic solvent.Pass through mould
The frit pattern that the frit pattern of molding, relatively traditional silk-screened obtain, the advantage with even uniform,
And the parameter such as frit width, thickness is more easy to control.
Step S60, by the frit-sintered after cooling on the glass substrate.
Specifically, the appointment position of glass substrate is placed frit, make frit sink by sintering process
Amass on the glass substrate.Sintering process can be by sintering methods such as resistance heating, infrared heating.Excellent
Selection of land, uses laser sintering processes.
The frit-deposition method that the present invention proposes, it is to avoid addition organic solvent, during follow-up sintering
Do not have the problem that residual organic matter causes frit crackle.
In one embodiment, with reference to Fig. 2, also include before step S40:
Step S30, arranges mold shape according to predetermined pattern.
The packaging effect of glass substrate is affected relatively big by encapsulation pattern, encapsulates under the purpose reducing device size
Pattern width should reduce, but this also brings along the problem that packaging air tightness does not reaches requirement.Therefore pattern
Design is an important step.This method can form various encapsulation pattern, it is only necessary to sets the shape of mould
Consistent with predetermined pattern, strong adaptability.
In one embodiment, with reference to Fig. 3, also include after step S60:
Step S80, the temperature at sintering position is down to room temperature by the heat produced by controlled vortex flow effect.Specifically
Ground, step S80 is:
Step S81: resistance wire is wrapped on metal bar and makes metal bar match with sintering position.
Specifically, if sintering position is rectangle, then select the metal bar of rectangle or by four corresponding length
Metal bar with composition rectangle with sinter position adapt；If sintering position is circular, select the gold of circle
Belong to rod, if sintering position is other shape, then select respective shapes or can make up respective shapes
Metal bar with sintering position match.
Step S82: produce unidirectional current.
Step S83: modulation unidirectional current is alternating current.
Specifically, by inverter, unidirectional current can be changed into corresponding alternating current.
Step S84: amplify alternating current and make alternating current pass through resistance wire formation eddy current and produce eddy current heat.
Specifically, by amplifier, above-mentioned alternating current can be amplified.
Step S85: controlled with controlling the galvanic size variation of state modulator by pulse width modulation wave
Eddy current heat is smooth to be reduced, and is heated sintering position by eddy current heat, and the temperature at sintering position is down to room temperature
Shi Shangshu unidirectional current makes zero.
The control state modulator produced by above-mentioned pulse width modulation wave and ratio, integration, derivative controller
Above-mentioned galvanic size, reduces the speed of above-mentioned alternating current zero, thus controls above-mentioned eddy current heat and smooth
Zero.When the temperature at above-mentioned sintering position reduces to room temperature, above-mentioned alternating current makes zero, and encapsulation completes.
Above-mentioned alternating current passes through resistance wire, and resistance wire coil produces alternating magnetic field, due to the conductor in the middle of coil
(i.e. metal bar) is equivalence can to become a Guan Bi circuit enclosed, the magnetic flux in Guan Bi circuit at circumferencial direction
Amount is constantly changing, so the circumferencial direction at conductor can produce induction electromotive force and faradic current, and electricity
Turn-take along the circumferencial direction of conductor in the direction of stream, just as the whirlpool of a circle circle, thus this in monoblock conductor
Portion occurs electromagnetic induction to produce faradic phenomenon and be referred to as vortex phenomenon.The whirlpool that eddy current effect produces simultaneously
Stream heat is relevant with the size of current of the alternating current passed through, by pulse width modulation wave and ratio, integration,
Derivative controller controls galvanic size variation thus controls the size variation of above-mentioned alternating current, thus controls
Above-mentioned eddy current heat is smooth to be reduced.
In one embodiment, frit components is: 25～the Na of 45%2The Al of O, 10～37%2O3, 25～50%
B2O3, 10～the Co of 20%2O3。
The material category of frit has large effect to packaging effect.Ideally CTE and fusing point temperature
Number of degrees value is the smaller the better, but when actually reducing melting temperature, thermal coefficient of expansion then can raise, otherwise also
Equally.Traditional glass material uses vanadic anhydride to join in frit as absorbent, but five oxidations two
Vanadium is noxious substance, if environment can be impacted by misoperation；Additionally, traditional material, although ensure
The melt temperature of frit declines, but the CTE between frit and glass substrate (thermal coefficient of expansion)
Difference is very big, easily causes crackle when sealing-in and caves in.
With reference to the experiment effect of this kind of various proportioning of frit in Fig. 5.The present invention uses above proportioning and group
The frit divided, adds cobalt sesquioxide as absorbent, laser absorption rate height so that laser package technique
Time shortens.In addition this kind of material is without toxic component, free from environmental pollution, also has that fusing point is low, CTE system
The feature that number is low.
Preferably, in frit, component is: the Na of 35%2O, the Al of 12%2O3, the B of 40%2O3, 13%
Co2O3Time, there is the coefficient of expansion of minimum melting temperature and minimum under this proportioning.
The present invention also proposes a kind of frit-deposition equipment, with reference to Fig. 6, including:
Heater 100, for being heated to molten condition by frit；
Specifically, the glass dust mixed is ready to, is placed in heater 100 heating.Can
It is glass dust to be poured in the containers such as crucible, heats in being placed into high temperature furnace, until glass melting, reach
Arriving can be with free-pouring molten condition.
Mould 200, for amorphous glass material；
Specifically, the melten glass material of cast is carried out moulding by mould 200, in mould 200 after cooling
Frit is formed has effigurate solid.Cooling means can be frit natural cooling by the time, it is possible to
Be by water-cooled, air-cooled method cool down.
Sintering equipment 300, after frit cools down, sintered deposit is on predeterminated position.
Specifically, the appointment position of glass substrate is placed frit, makes glass by sintering equipment 300
Material deposition is on the glass substrate.Sintering equipment can be the sintering equipment such as resistive heating device, infrared light sources.
Preferably, sintering equipment 300 uses laser sintering device.
In one embodiment, mould 200 is arranged according to predetermined pattern.
The packaging effect of glass substrate is affected relatively big by encapsulation pattern, encapsulates under the purpose reducing device size
Pattern width should reduce, but this also brings along the problem that packaging air tightness does not reaches requirement.Therefore pattern
Design is an important step.This device various encapsulation patterns as required, arrange the shape of mould flexibly
Shape is consistent with predetermined pattern, strong adaptability.
In one embodiment, with reference to Fig. 7, this equipment also includes:
Heat sink 400, the temperature at sintering position is down to room temperature by the heat produced by controlled vortex flow effect.
In the present embodiment, heat sink 400 includes control module 410 and the heat preservation module 420 being connected, and protects
Temperature module 420 matches with sintering position.After sintering completes, control module 410 controls heat preservation module 420
Sintering position heated and smooths the heating-up temperature reducing above-mentioned heat preservation module 420, making sintering position
Temperature is down to room temperature.After above-mentioned sintering, by heat preservation module 420, above-mentioned sintering position is carried out heating and lowers the temperature,
The temperature of above-mentioned heating is temperature during above-mentioned heat-agglomerating, it is ensured that bonding part position is capable of progressively lowering the temperature.
Further, with reference to Fig. 8, above-mentioned control module 410 includes control chip 411, the inversion being connected
Device 412 and amplifier 413, control chip 411 produces unidirectional current, and unidirectional current is transformed into phase by inverter 412
The alternating current answered, alternating current is amplified and flows to next parts by amplifier 413.
Specifically, above-mentioned control chip 411 can be arm processor.
Above-mentioned control chip 411 includes pwm unit 411a and ratio, integration, derivative controller
Unit 411b, the pulse width modulation wave that control chip 411 is generated by pwm unit 411a and
The galvanic size of control state modulator that ratio, integration, derivative controller unit 411b generate, so that
The eddy current heat that alternating current produces progressively reduces.
Further, with reference to Fig. 9, heat preservation module 420 includes metal bar 421 and the electricity being wrapped on metal bar
Resistance silk 422, metal bar 421 matches with sintering position pattern, resistance wire 422 link control module 410 (figure
Do not show).Control module 410 produces alternating current, and above-mentioned alternating current is produced by resistance 422 and metal bar 421
Eddy current also produces eddy current heat, is heated sintering position by eddy current heat, and control module 410 is by controlling
The size controlled vortex flow heat of alternating current smooths reduction makes the temperature at bonding position smoothly be down to room temperature.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed,
But therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that, for this area
Those of ordinary skill for, without departing from the inventive concept of the premise, it is also possible to make some deformation and
Improving, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be with appended
Claim is as the criterion.
Claims (10)
1. a frit-deposition method, including:
Heated frit is to molten condition；
Described molten glass material is poured in mould and shapes and cool down；And
By the frit-sintered of described cooling on the glass substrate；
Resistance wire is wrapped on metal bar and make described metal bar match with sintering position, produce unidirectional current, modulating described unidirectional current is alternating current, amplify described alternating current and make described alternating current form eddy current by described resistance wire and produce eddy current heat, by galvanic size variation described in the control state modulator that pulse width modulation wave and ratio, integration, derivative controller produce thus control that described eddy current heat is smooth to be reduced, being heated described sintering position by described eddy current heat, the temperature at described sintering position is down to described unidirectional current zero during room temperature.
Frit-deposition method the most according to claim 1, it is characterised in that the described frit-sintered by described cooling concrete grammar on the glass substrate is laser sintered.
Frit-deposition method the most according to claim 1, it is characterised in that described being poured in mould by described frit also includes before forming steps:
According to predetermined pattern, mold shape is set.
Frit-deposition method the most according to claim 1, it is characterised in that described frit components is: 25～the Na of 45%2The Al of O, 10～37%2O3, 25～the B of 50%2O3, 10～the Co of 20%2O3。
Frit-deposition method the most according to claim 4, it is characterised in that described frit components is: the Na of 35%2O, the Al of 12%2O3, the B of 40%2O3, the Co of 13%2O3。
6. a frit-deposition equipment, it is characterised in that including:
Heater, for being heated to molten condition by frit；
Mould, shape described frit；
Sintering equipment, is deposited on described frit-sintered on predeterminated position after described frit cools down
Heat sink, the temperature at sintering position is down to room temperature by the heat produced by controlled vortex flow effect, described heat sink includes control module and the heat preservation module being connected, described heat preservation module matches with described sintering position, described control module controls described heat preservation module and heats described sintering position and smooth the heating-up temperature reducing described heat preservation module, makes the temperature at described sintering position be down to room temperature；
Described control module includes control chip, inverter and the amplifier being connected, and described control chip produces unidirectional current, and unidirectional current is transformed into alternating current by described inverter, and described amplifier amplifies alternating current and is delivered to described heat preservation module；
Described control chip includes pwm unit and ratio, integration, derivative controller unit, the pulse width modulation wave that described control chip is produced by described pwm unit, and the control state modulator unidirectional current size that described ratio, integration, derivative controller unit produce.
Frit-deposition equipment the most according to claim 6, it is characterised in that described sintering equipment is laser aid.
Frit-deposition equipment the most according to claim 6, it is characterised in that described mold shape is arranged according to predetermined pattern.
Frit-deposition equipment the most according to claim 6, it is characterised in that described frit components is: 25～the Na of 45%2The Al of O, 10～37%2O3, 25～the B of 50%2O3, 10～the Co of 20%2O3。
Frit-deposition equipment the most according to claim 9, it is characterised in that described frit components is: the Na of 35%2O, the Al of 12%2O3, the B of 40%2O3, the Co of 13%2O3。
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| CN201310463976.8A CN103560210B (en) | 2013-09-30 | 2013-09-30 | Frit-deposition method and apparatus |
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| CN201310463976.8A CN103560210B (en) | 2013-09-30 | 2013-09-30 | Frit-deposition method and apparatus |
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| CN103560210B true CN103560210B (en) | 2016-08-17 |
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Citations (3)
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|---|---|---|---|---|
| TW200428478A (en) * | 2003-04-11 | 2004-12-16 | Scivax Corp | Apparatus for pattern formation, and method for pattern formation |
| CN101386470A (en) * | 2007-09-10 | 2009-03-18 | 东进世美肯株式会社 | Glass frit and sealing method for element using the same |
| CN102224115A (en) * | 2008-11-26 | 2011-10-19 | 旭硝子株式会社 | Glass member having sealing/bonding material layer, electronic device using same, and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8907367B2 (en) * | 2011-10-04 | 2014-12-09 | Panasonic Corporation | Light emission device |
| CN102875014B (en) * | 2012-10-26 | 2014-10-01 | 中国科学院上海光学精密机械研究所 | Bonding edge-cladding method for laser glass |
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- 2013-09-30 CN CN201310463976.8A patent/CN103560210B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200428478A (en) * | 2003-04-11 | 2004-12-16 | Scivax Corp | Apparatus for pattern formation, and method for pattern formation |
| CN101386470A (en) * | 2007-09-10 | 2009-03-18 | 东进世美肯株式会社 | Glass frit and sealing method for element using the same |
| CN102224115A (en) * | 2008-11-26 | 2011-10-19 | 旭硝子株式会社 | Glass member having sealing/bonding material layer, electronic device using same, and manufacturing method thereof |
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