CN103560081A - 晶圆切割和研磨用膜的加工工艺 - Google Patents

晶圆切割和研磨用膜的加工工艺 Download PDF

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CN103560081A
CN103560081A CN201310562763.0A CN201310562763A CN103560081A CN 103560081 A CN103560081 A CN 103560081A CN 201310562763 A CN201310562763 A CN 201310562763A CN 103560081 A CN103560081 A CN 103560081A
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cutting
film
wafer
technology
product
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崔庆珑
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WEISHIDA SEMICONDUCTOR TECHNOLOGY (ZHANGJIAGANG) Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

本发明公开一种晶圆切割和研磨用膜的加工工艺，包括以下步骤：步骤1.涂布工序；步骤2.分切工序；步骤3.检测工序；其中在步骤2进行的过程中，分切的同时进行预照射UV处理，通过调整照射UV量的多少来调整切割膜的粘性。本发明可以减少这些工序，特别是涂布工序，经过一次涂布工序就能生产出多种不同粘着力的晶圆切割和研磨用膜产品。

Description

晶圆切割和研磨用膜的加工工艺
技术领域
本发明涉及一种半导体晶圆处理技术，尤其涉及一种晶圆切割和研磨用膜的加工工艺。
背景技术
晶圆切割、研磨等保护用膜即晶圆切割和研磨用膜，目前主要分为非UV型和UV型，其生产工艺都是采用调整配方的变化，通过涂布工序、分切工序、检测包装工序来完成客户对不同粘着力的要求，这样就需要每一种粘着力的产品都需要经过涂布工序、分切工序、检测包装工序等三个主要工序，其中涂布工序是最容易出问题最耗时的一道工序。
另外，调整配方需要很多步骤来验证，这些步骤也需要经过涂布、分切等工序，非常浪费时间。
发明内容
本发明的目的是：提供一种晶圆切割和研磨用膜的加工工艺，可以减少这些工序，特别是涂布工序，经过一次涂布工序就能生产出多种不同粘着力的晶圆切割和研磨用膜产品。
为了实现上述目的，本发明的技术方案是：
一种晶圆切割和研磨用膜的加工工艺，其特征在于：包括以下步骤：
步骤1，涂布工序；
步骤2，分切工序；
步骤3，检测工序；
其中在步骤2进行的过程中，分切的同时进行预照射UV处理，通过调整照射UV量的多少来调整切割膜的粘性。
进一步的，在所述步骤2进行的过程中，通过调整分切的速度来调整切割膜的粘性。
进一步的，所述切割膜的粘性与照射UV量成反比，与切割速度成正比。
本发明由于采用了上述技术，使之与现有技术相比具有的积极效果是：本发明通过设备的设定，来调节UV照射量的多少和分切的速度来增大或者是减少晶圆切割和研磨用膜的粘着力，相比目前通过调节产品配方需要生产几种不同粘性的保护膜就需要调整几次配方，几次涂布工序的传统保护膜生产工艺，一次涂布工序就可以生产出多种不同粘性的晶圆切割和研磨用膜，减少了涂布工序次数,生产效率高。
附图说明
图1是本发明晶圆切割和研磨用膜的加工工艺的流程图。
图2是本发明照射UV设备的结构示意图。
具体实施方式
以下结合附图进一步说明本发明的实施例。
请参见图1，一种晶圆切割和研磨用膜的加工工艺，包括以下步骤：
步骤1，涂布工序；
步骤2，分切工序；
步骤3，检测工序；
其中在步骤2进行的过程中，分切的同时进行预照射UV处理，通过调整照射UV量的多少来调整切割膜的粘性。
在所述步骤2进行的过程中，通过调整分切的速度来调整切割膜的粘性。
选取晶圆切割膜B-363产品配方胶水，0.09mm厚度的PE膜基材，0.05mm厚度的单面硅离型PET膜复合，用精密涂布机涂布，速度35m\min，涂布干胶厚度为0.01mm，经过熟成后制成母卷产品A，经过分切制成300mm宽度的晶圆切割膜，按照国标GB/T2792-81测试产品A的180°粘着力为5.4N\in。
实施例1：对上述母卷产品A在分切的同时照射UV，分切速度为10m\min，照射量为50mj\cm2制成产品B，按照国标GB/T 2792-81测试产品B的180°粘着力为4.1N\in。
实施例2：对上述母卷产品A在分切的同时照射UV，分切速度为10m\min，照射量为75mj\cm2制成产品C，按照国标GB/T 2792-81测试产品C的180°粘着力为2.2N\in。相比于实施例1，实施例2增强了照射UV的量，产品的粘着力下降。
实施例3：对上述母卷产品A在分切的同时照射UV，分切速度为5m\min，照射量为75mj\cm2制成产品E，按照国标GB/T 2792-81测试产品E的180°粘着力为1.3N\in。相比于实施例2，实施例3的分切速度下降，产品的粘着力下降。
实施例4：对上述母卷产品A在分切的同时照射UV，分切速度为17m\min，照射量为20mj\cm2制成产品D，按照国标GB/T 2792-81测试产品D的180°粘着力为6.7N\in。相比于实施例3，减弱了照射UV的量、提高了分切速度，产品的粘着力大大增强。
如果按照传统的保护膜生产工艺来生产晶圆切割和研磨用膜，以上五个产品需要五个不同的产品配方和五次涂布工序才能完成，按照本发明的生产工艺只需要一个产品配方和一次涂布工艺就可以完成，效率明显提高。
请参见图2所示，其中照射UV设备包括整挡光板1、UV照明灯组2、遮光罩3以及传输机构4；所述但光板1上的开口大小可调；所述UV照明灯组2的照明强度可以调节。
优选的，所述传输机构4由多个滚轮5组成。
优选的，所述传输机构4上设置被照射物，并带动所述被照射物运动，调节所述被照射物的运动速度。
照射UV设备的功率、照射距离、分切时设备的速度等因素对产品的粘性影响较大，通过这些参数的相互配合，可以确定下来所需要粘着力大小的晶圆切割和研磨用膜产品。
综上所述，本发明可以减少这些工序，特别是涂布工序，经过一次涂布工序就能生产出多种不同粘着力的晶圆切割和研磨用膜产品。

Claims (3)

1.一种晶圆切割和研磨用膜的加工工艺，其特征在于：包括以下步骤：
步骤1，涂布工序；
步骤2，分切工序；
步骤3，检测工序；
其中在步骤2进行的过程中，分切的同时进行预照射UV处理，通过调整照射UV量的多少来调整切割膜的粘性。
2.根据权利要求1所述的一种晶圆切割和研磨用膜的加工工艺，其特征在于：在所述步骤2进行的过程中，通过调整分切的速度来调整切割膜的粘性。
3.根据权利要求1所述的一种晶圆切割和研磨用膜的加工工艺，其特征在于：所述切割膜的粘性与照射UV量成反比，与切割速度成正比。
CN201310562763.0A 2013-11-13 2013-11-13 晶圆切割和研磨用膜的加工工艺 Pending CN103560081A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1138615A (zh) * 1995-06-02 1996-12-25 贝尔斯多夫股份有限公司 切割胶带
US5972154A (en) * 1995-06-28 1999-10-26 Sony Corporation Methods of dicing flat workpieces
CN101638566A (zh) * 2008-07-31 2010-02-03 日东电工株式会社 再剥离型粘合剂及再剥离型粘合片

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1138615A (zh) * 1995-06-02 1996-12-25 贝尔斯多夫股份有限公司 切割胶带
US5972154A (en) * 1995-06-28 1999-10-26 Sony Corporation Methods of dicing flat workpieces
CN101638566A (zh) * 2008-07-31 2010-02-03 日东电工株式会社 再剥离型粘合剂及再剥离型粘合片

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