CN103559911A - Method for improving cycle durability of chip - Google Patents

Method for improving cycle durability of chip Download PDF

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Publication number
CN103559911A
CN103559911A CN201310477570.5A CN201310477570A CN103559911A CN 103559911 A CN103559911 A CN 103559911A CN 201310477570 A CN201310477570 A CN 201310477570A CN 103559911 A CN103559911 A CN 103559911A
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block
method
erase
chip
erasing
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CN201310477570.5A
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张登军
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广东博观科技有限公司
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Publication of CN103559911A publication Critical patent/CN103559911A/en

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Abstract

The invention provides a method for improving cycle durability of a chip. The method comprises the following steps: pre-programming Block; determining whether each area of Block is uniform; according to the different situations of Block, using different erase methods for erasure; and refreshing programming. Compared with the prior art, the technical scheme provided by the invention has the following advantages: a method comprising first check on situations memory units of the Block and adaptive control of size of the erase block is employed to improve the cycle durability of the chip.

Description

ー种提高芯片周期耐久性的方法ー kinds of methods to improve the durability of the chip cycle

技术领域 FIELD

[0001] 本发明涉及半导体技术领域,尤其涉及ー种提高芯片周期耐久性的方法。 [0001] The present invention relates to semiconductor technology, and more particularly relates to a method to improve the chip period ー species durability.

背景技术 Background technique

[0002] 闪存(Flash Memory)是ー种长寿命的非易失性(在断电情况下仍能保持所存储的数据信息)的存储器,数据删除不是以单个的字节为单位而是以固定的区块为单位。 [0002] The flash memory (Flash Memory) is a non-volatile species ー long life (can maintain stored data in case of power failure) of the memory, the data deletion is not a single fixed but in bytes It blocks as a unit. 由于其断电时仍能保存数据,闪存通常被用来保存设置信息,如在电脑的BIOS(基本输入输出程序)、PDA (个人数字助理)、数码相机中保存资料等。 Because it can still save the data when power is off, the flash memory is often used to save the settings information such as the computer's BIOS (basic input output program), PDA (personal digital assistants), digital cameras save information. NOR Flash和NAND Flash是现在市场上两种主要的非易失闪存技术。 NOR Flash and NAND Flash market is now two main nonvolatile flash memory technology. NOR Flash的特点是芯片内执行(XIP,eXecute In Place),这样应用程序可以直接在Flash闪存内运行,不必再把代码读到系统RAM中。 NOR Flash feature is executed (XIP, eXecute In Place) chip, so that applications can run directly in the Flash memory, need not read the code then the system RAM.

[0003] Nor Flash存储区域为了节约芯片面积,一般都采用物理集中放置,构成ー个存储矩阵,然后在逻辑上分成很多块,如图2所示。 [0003] Nor Flash storage area in order to save chip area, generally using physical centrally located, constituting ー memory matrix, and then divided into many logical blocks, as shown in FIG. 通常I个芯片由多个Block (块)组成,每个Block由多个Sector (段)组成。 Typically a plurality of chip I Block (blocks), each composed of a plurality Sector Block (segments) composition. 通常Nor Flash擦除的命令有三种:芯片擦除(chiperase)、块擦除(block erase)、段擦除(sector erase),通常对芯片进行整体擦除操作时,采用分块来逐个擦除,这个分块通常为了节约擦除时间一般采用Block为单位,也就是16个Sector —起进行擦除操作,正是由于这种选择方式,带来了芯片周期耐久性的问题,一般芯片要求10万次的周期耐久性,但是如果采用一起操作方式,通常很难达到10万次的周期耐久性的要求。 Nor Flash erase command usually three: Chip Erase (chiperase), the block erase (block erase), segment erase (sector erase), typically whole chip erase operation, one by one erase block using this block usually generally used in order to save time block erase units, i.e. 16 Sector - starting the erase operation, precisely because of this selection method, the chip period poses a problem of durability, chip typically requires 10 million times cycle durability, but if employed together mode of operation, it is often difficult to achieve the required cycle durability of 100,000 times.

[0004] 由于Nor Flash存储器単元自身的特点,当存储器単元经过多次擦写后,这个存储器単元会变慢,例如,我们对SectorO进行10万次周期擦写,这个Sector内的所有単元擦写速度变慢,但是其它的存储单元还是保持原来的擦写速度,这样如果我们对SectorO所在的大Block做块擦除操作时,就会出现等到这个sector擦除好了以后,这个block里面的其他的Sector都已经“过擦除” 了,芯片又需要纠正这些“过擦除”存储单元,需要耗费大量时间,如果“过擦除”严重,没有办法纠正过来,导致擦除失败。 [0004] Since the Nor Flash memory radiolabeling yuan own characteristics, when the memory erase after several radiolabeling yuan, the yuan will slow memory radiolabeling, for example, we SectorO a 100,000 cycle erase, erase all radiolabeling yuan in this Sector slow down, but other storage units or to maintain the original erase speed, so if we do a large block of block SectorO where the erase operation, there will be until well after the sector erase this block inside the other the Sector have been "over-erased", and chip and need to correct these "over-erased" memory cell and requires a lot of time, if the "over-erased" serious, there is no way to correct them, resulting in failure to erase.

[0005] 因此,希望提出一种解决当前Nor Flash芯片周期耐久性问题的方法。 [0005] Thus, it wished to propose a solution to the current problem of durability Nor Flash chip cycle.

发明内容 SUMMARY

[0006] 本发明提供了ー种可以解决上述问题的方法,包括以下步骤: [0006] The present invention provides a method to solve the above problems ー species, comprising the steps of:

[0007] a)对Block 预编程; [0007] a) Block of preprogrammed;

[0008] b)判断Block各区域是否均匀; [0008] b) determining whether each area Block uniformly;

[0009] c)根据Block各区域均匀情况,使用不同的擦除方法进行擦除; [0009] c) The case where a uniform Block regions, using different erase erase method;

[0010] d)刷新编程。 [0010] d) programming the refresh.

[0011] 与现有技术相比,采用本发明提供的技术方案具有如下优点:通过采用首先检查Block内存储器単元的情況,自适应调节擦除块大小的方法,提高芯片周期耐久性。 [0011] Compared with the prior art, the technical solution provided by the invention have the following advantages: First check by using the radiolabeling Block memory element, the method of adaptively adjusting the size of the erase block, to improve the durability of the chip period.

附图说明[0012] 通过阅读參照以下附图所作的对非限制性实施例所作的详细描述,本发明的其它特征、目的和优点将会变得更明显。 BRIEF DESCRIPTION [0012] Non-limiting detailed description of embodiments given below with reference to the accompanying drawings reading Other features, objects and advantages will become more apparent.

[0013] 图1为根据本发明的实施例的提高芯片周期耐久性的方法流程图; [0013] FIG. 1 is a flowchart of a method to improve the chip cycle embodiment of the present invention embodiment durability;

[0014] 图2为Nor Flash存储区域示意图。 [0014] FIG. 2 is a schematic Nor Flash storage area.

具体实施方式 Detailed ways

[0015] 下面详细描述本发明的实施例。 [0015] The following detailed description of embodiments of the present invention.

[0016] 所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。 [0016] The exemplary embodiments illustrated in the accompanying drawings, wherein same or similar reference numerals designate the same or similar elements or elements having the same or similar functions. 下面通过參考附图描述的实施例是示例性的,仅用于解释本发明,而不能解释为对本发明的限制。 By following with reference to the embodiments described are exemplary only for explaining the present invention and should not be construed as limiting the present invention. 下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。 Following disclosure provides many different embodiments or examples to implement the present invention differ in structure. 为了简化本发明的公开,下文中对特定例子的部件和设置进行描述。 To simplify the disclosure of the present invention, be described hereinafter and the members of the specific examples provided. 当然,它们仅仅为示例,并且目的不在于限制本发明。 Of course, they are only illustrative, and are not intended to limit the present invention. 此外,本发明可以在不同例子中重复參考数字和/或字母。 Further, the present disclosure may repeat reference numerals and / or letters in the various examples. 这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施例和/或设置之间的关系。 This repetition is for the purpose of simplicity and clarity, and does not indicate a relationship between the embodiments and / or arrangements being discussed. 此外,本发明提供了的各种特定的エ艺和材料的例子,但是本领域普通技术人员可以意识到其他エ艺的可应用于性和/或其他材料的使用。 Further, the present invention provides processes and examples Ester various specific material, but one of ordinary skill in the art may be aware of and may be applied to other arts Ester / or other materials.

[0017] 本发明提供了ー种提高芯片周期耐久性的方法。 [0017] The present invention provides a method of improving the chip period ー kinds durability. 下面,将结合图1和图2通过本发明的ー个实施例对此方法进行具体描述。 Hereinafter, in conjunction with FIGS. 1 and 2 will be specifically described by way ー embodiment of the method of this invention. 如图1所示,本发明所提供的方法包括以下步骤: As shown in FIG. 1, the present invention provides the method comprising the steps of:

[0018] 在步骤SlOl中,对Block预编程。 [0018] In step SlOl, the preprogrammed to Block.

[0019] 由于当前擦除的block中存储单元存储的信息可能是“1”,也可能是“0”,在本实施例中,通过预编程把“I”的信息全部编程成“0”,这样该block中所有的存储信息都变成了“0”,这样保证在擦除整个block时候,所有的存储单元状态基本一致,一致擦除速度差别不大。 [0019] Since the current erase block stored in the information storage unit may be "1", it may be "0", in the present embodiment, the information is pre-programmed by the "I" all programmed to "0", Thus all the information stored in the block becomes a "0", thus ensuring that the entire erase block when the state of all the memory cells substantially identical, the erasing speed is not very different. 保证不会因为存储単元状态不一样而造成擦除速度的不一致。 It ensures that no storage radiolabeling yuan caused by inconsistent state is not the same erase speed. 在其它实施例中也可以选择把信息全部编程成“ I ”。 In other embodiments, the information may be selected all programmed to "I".

[0020] 具体算法包括:从block地址的第一个byte (字节)开始验证,如果有“ I”的bit(比持)存在,就把当前byte的所有“ l”bit编程成“ 0”,编程成功后,地址自动加1,进行第2个bit的验证和编程操作,在整个Block内循环上面的操作,直到当前block的最后ー个byte,这样这个block全部的存储信息都变成了编程状态全为“0 “,就完成了对Block的 [0020] The algorithm comprises: start from the first byte Block Verify address (bytes), if bit "I" (the holding ratio) exists, put all the current byte "l" bit is programmed to "0" after successful programming, automatic address 1, the second bit of the verification and programming operations, the entire operation in the above Block inner loop until the last byte ー a current block, so the entire block of information into a storage all-programmed state "0", completed the Block

预编程。 Pre-programmed.

[0021] 在步骤S102中,判断Block各区域是否均匀。 [0021] In step S102, it is determined whether the regions Block uniformly.

[0022] 具体的判断方法包括:首先对这个block进行大块擦除。 [0022] The specific judgment method comprising: a first block of the chunk for erasing. 擦除一个大块区域,通常采用多个擦除脉冲缓慢擦除的方式。 Erase a large area, usually a plurality of erase pulses to erase the slow manner. 因为不同存储单元的擦除速度可能不一致,因此在每ー个脉冲擦除后,还需要进行过擦除的自动纠正操作,目的是纠正擦除速度比较快的存储单元。 Because different memory cell erase speed may be inconsistent, so after each erase pulse ー, also the need for over-erased automatically correct operation, aimed at correcting the faster erasing memory cells. 如果某区域存储单元被编程/擦除多次,则擦除速度就会变的比较慢,因此如果Block区域中有这种被多次编程/擦除的小区域存在的话,存储单元经过若干次擦除脉冲以及之后的纠正之后,需要纠正的过擦除単元会突然增加很多,同时每次纠正需要花费的时间也增加很多,通过这ー特征可以判断出当前Block状态。 If a region of memory cells are programmed / erased a plurality of times, the erasing speed will become slow, so if there is the presence of such regions Block multiple times of program / erase a small area, then the memory cell after several after correction after the erase pulse as well as the need to correct the over erase radiolabeling yuan will suddenly increase a lot, but each time it takes to correct also increased a lot, by this ー characteristics can determine the current status of Block. 纠正花费时间较长的Block我们认为是不均匀的。 It takes longer to correct the Block we think is uneven.

[0023] 在步骤S103中,据Block不同的状况,使用不同的擦除方法进行擦除。 [0023] In step S103, according to the different conditions of Block, using different erase method for erasing. [0024] 根据步骤S102对Block判断的結果。 [0024] The step S102 of the result of the determination Block. 如果Block区域均匀,即各区域擦除速度相差不大的话,我们就采用常规的大块擦除的方法对Block进行擦除,从而減少擦出时间。 If Block uniform region, i.e., the regions of the erase speed or less, we would use a conventional method of bulk erase Block erase, wipe thereby reducing time.

[0025] 如果Block区域不均匀,即存在有擦除速度较慢的区域,我们选择采用分开小块的方式进行高可靠性擦除。 [0025] If uneven Block area, i.e., there is a slower erase region, we choose to use a separate small highly reliable manner erased. 在本实施例中,我们针对64k的Block,将其分成了16块每块大小为4k的区域分别进行擦除,这样就避免了大块擦除带来的,擦除速度较快区域的过擦除的问题。 In the present embodiment, we focused on the Block 64k, which is divided into 16 regions each 4k block size is erased separately, thus avoiding the bulk erase brought over erase faster area erase the problem.

[0026] 在进行完擦除步骤后,还可以选择性的进行ー步查验,以保证全部区域擦除结束。 [0026] After performing the erasing step, further steps may be selectively performed ー inspection to ensure that all regions completely erased.

[0027] 在步骤S104中,刷新编程。 [0027] In step S104, the programmed refresh.

[0028] 因为相邻Block之间在物理上是相连的,其位线是连在一起的,而这些block中的信息有“ I”和“O”。 [0028] Block as between physically connected, its bit line are connected together, these adjacent block of information with a "I" and "O". 所以在擦除当前block的时候,如果长期影响周围的Block,有可能改变存在这些Block内的信息,为了增加整个存储结构的可靠性,在当前块的擦除任务结束后,需要判断这些信息有没有受到干扰,并对受到干扰的信息就行一歩自动纠正。 So erase the current block of time, if the long-term effects Block around, it is possible to change the presence information within these Block, in order to increase the reliability of the whole storage structure, after the end of the current mandate erased block, there is need to determine this information without interference, and the information is subject to interference on the line a ho corrected automatically.

[0029] 与现有技术相比,本发明具有以下优点:通过采用首先检查Block内存储器単元的情況,自适应调节擦除块大小的方法,提高芯片周期耐久性。 [0029] Compared with the prior art, the present invention has the following advantages: First check by using the radiolabeling Block memory element, the method of adaptively adjusting the size of the erase block, to improve the durability of the chip period.

[0030] 虽然关于示例实施例及其优点已经详细说明,应当理解在不脱离本发明的精神和所附权利要求限定的保护范围的情况下,可以对这些实施例进行各种变化、替换和修改。 [0030] Although embodiments have been described in detail with respect to exemplary embodiments and the advantages thereof, it should be understood that in the case of the appended claims without departing from the spirit and scope of the invention defined by the claims, that various changes may be made to these embodiments, substitutions and modifications . 对于其他例子,本领域的普通技术人员应当容易理解在保持本发明保护范围内的同时,エ艺步骤的次序可以变化。 For other examples, those of ordinary skill in the art should be readily understood that while remaining within the scope of the present invention, the order of process steps may be varied Ester.

[0031] 此外,本发明的应用范围不局限于说明书中描述的特定实施例的エ艺、机构、制造、物质组成、手段、方法及步骤。 [0031] In addition, the scope of application of the present invention is not limited to particular embodiments described in the specification Ester arts, machines, manufacture, compositions of matter, means, methods and steps. 从本发明的公开内容,作为本领域的普通技术人员将容易地理解,对于目前已存在或者以后即将开发出的エ艺、机构、制造、物质组成、手段、方法或步骤,其中它们执行与本发明描述的对应实施例大体相同的功能或者获得大体相同的结果,依照本发明可以对它们进行应用。 From the disclosure of the present invention, as those of ordinary skill in the art will readily be appreciated, for currently existing or to be developed Ester arts, machines, manufacture, compositions of matter, means, methods, or steps, which perform the present corresponding to the embodiment described with substantially the same function or achieve substantially the same embodiment of the invention can be utilized according to the present invention. 因此,本发明所附权利要求g在将这些エ艺、机构、制造、物质组成、手段、方法或步骤包含在其保护范围内。 Thus, g appended claims of the invention in these arts Ester, machines, manufacture, compositions of matter, means, methods, or steps included within its scope.

Claims (5)

1.ー种提高芯片周期耐久性的方法,该方法包括以下步骤: a)对Block预编程; b)判断Block各区域是否均匀; c)根据Block各区域的均匀情況,使用不同的擦除方法进行擦除; d)刷新编程。 1. ー method for improving the durability of the chip cycle types, the method comprising the steps of: a) Block preprogrammed; b) determining whether each area Block uniformly; c) according to the regions where uniform Block, using different methods of erasure erasing; D) programmed refresh.
2.根据权利要求1所述的方法,其中,步骤a)所述的对Block预编程的方法为对Block内所有存储单元的信息统ー编程为“0”或统ー编程为“ I ”。 2. The method according to claim 1, wherein the method is preprogrammed Block information integration of all the memory cells within the Block ー step a) is programmed to "0" or ー system programmed to "I".
3.根据权利要求1所述的方法,其中,子步骤b)所述的判断Block各区域是否均匀包括以下步骤: 发出擦除脉冲,对Block进行大块擦除; 进行过擦除的自动纠正操作; 循环重复以上两步操作若干次; 根据此时纠正过擦除所用时间的长短对Block各区域是否均匀做出判断。 3. The method according to claim 1, wherein, Block determining substep b) each of said region is uniform includes the step of: issuing an erase pulse of erasing Block for bulk; been erased automatically correct operation; cycle was repeated several times over two steps; in this case the corrected based on the length of time spent erase each area is uniform Block judgment.
4.根据权利要求1所述的方法,其中,步骤c)所述的不同的擦除方法为: 如果Block区域均匀,则采用大块擦除的方法对Block进行擦除; 如果Block区域不均匀,则采用分开小块的方式进行高可靠性擦除。 4. The method according to claim 1, wherein the different erasing method, step c) according to: If Block homogeneous region, the bulk erase method of erasing Block; if Block uneven region , by way of the separate pieces of high reliability erased.
5.根据权利要求1所述的方法,其中,步骤d)所述的刷新编程的方法包括以下步骤: 判断与被擦除Block相邻的Block的信息是否受到干扰; 对被干扰的信息进行自动纠正。 The method according to claim 1, wherein the method of programming the refresh step d) comprises the steps of: determining the information of the adjacent erase Block Block whether disturbed; automatic information interfered correct.
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