CN103559909B - The phase change memory structure that the mixing of a kind of photoelectricity stores and its preparation method - Google Patents
The phase change memory structure that the mixing of a kind of photoelectricity stores and its preparation method Download PDFInfo
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Abstract
The present invention relates to phase change memory structure and its preparation method that the mixing of a kind of photoelectricity stores, comprise the following steps: offer one is provided with the substrate of wordline, prepares some conductive through hole lower electrodes in described wordline; Described conductive through hole lower electrode layer prepares system selector switch device; Continue the conductive interconnection through hole electrode of preparation with system selector switch device contacts; Then the semiconductor laser being in contact with it is prepared; Described semiconductor laser layer prepares the transparent conductive electrode being in contact with it; Continue to prepare the phase-change material layers being in contact with it; Continue to prepare conductive reflective on described phase-change material layers; Then in described conductive reflective, prepare conductive through hole top electrode and form bit line. The feature of this phase-changing memory unit is the write and the erasing that utilize laser signal to realize information, electrical signal is utilized to realize the reading of information, thus take full advantage of the high speed characteristics of Myocardial revascularization bylaser and the high s/n ratio characteristic of electrical signal reading, it is achieved phase transition storage at a high speed.
Description
Technical field
The invention belongs to micro-nano electronic technology field. The present invention is specifically related to phase change memory structure and its preparation method that the mixing of a kind of photoelectricity stores.
Background technology
Phase change memory technology is at late 1960s (Phys.Rev.Lett. based on Ovshinsky, 21,1450��1453,1968) (Appl.Phys.Lett. at the beginning of the seventies, 18,254��257,1971) phase-change thin film proposed can be applied to what the conception of phase change memory medium was set up, is that a kind of price is cheap, the storage device of stable performance. Phase transition storage can be made in silicon wafer substrate, and its critical material is phase-change thin film, heating electrode material, thermal insulation material and the extraction electrode material etc. that can record. The ultimate principle of phase transition storage utilizes electric impulse signal to act on device unit, make phase change material that reversible transformation occur between non-crystalline state and polycrystalline state, high resistance during by differentiating non-crystalline state and low-resistance during polycrystalline state, it is possible to realize the write of information, erasing and reading operation.
The critical material of phase transition storage is chalcogenide compound alloy material, its feature be when to its electricimpulse or adopt LASER HEATING method time can make material that reversible transformation occurs between non-crystalline state and polycrystalline state. With the reversible transformation of material structure, the performance generation reversible transformations such as the optics of material and electricity, high resistance (antiradar reflectivity) is presented when being in non-crystalline state, low-resistance (high-reflectivity) is presented during polycrystalline state, resistance change amplitude can reach several orders of magnitude, so just can as a non-volatility memorizer. The reversible change characteristic of chalcogenide compound optical property has been used successfully to the series erasables such as CD-RW (CompactDiskRewritable), DVD �� RW (DigitalVersatileDiskRewritable), DVD-RAM (DigitalVersatileDiskRandomAccessMemory) and HD-DVD (High-DensityDigitalVersatileDisk) and has rewritten phase change disc. And the Phase change memory technology utilizing its resistive performance also comes into the market.
The research of storer develops towards direction at a high speed always. But the erase process of phase transition storage relates to the crystallization of phase change material, required time, often in several hundred even several thousand nanoseconds, is the bottleneck place of restriction phase transition storage speed. Utilizing induced with laser phase change material generation crystallization even can fly to complete in second magnitude time in psec, but before and after crystallization, the optical property difference of phase change material is too little, the carrier-to-noise ratio that information stores is very low; And utilizing pulse electrical signal induced phase transition materials generation crystallization, before and after crystallization, the electric property difference of phase change material is very big, can obtain very high information and store carrier-to-noise ratio, but the time that crystallization occurs is too long, cannot meet high speed storing requirement. If utilizing induced with laser phase change material phase transformation to realize write and the erasing of information, and utilize the resistance change measuring phase change material can realize the accurate reading of information, this is exactly the photoelectricity mixing storage Phase change memory technology of the write of so-called light, electrical readout, the optical storage of traditional sense and the respective advantage of phase transition storage can be given full play to whereby, it is achieved the object of high speed storing. But the device architecture design how realizing photoelectricity mixing storage is a big difficult problem, for this reason, the phase change memory structure that the present invention proposes the mixing storage of a kind of photoelectricity solves the problems of the technologies described above.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide phase change memory structure and its preparation method that the mixing of a kind of photoelectricity stores, for solving the problem that in prior art, information storage speed is slow or carrier-to-noise ratio is low.
For achieving the above object and other relevant objects, the present invention provides a kind of photoelectricity phase change memory structure that mixing stores, and this phase change storage structure comprises the substrate that upper surface preparation has some wordline; It is positioned at some conductive through hole lower electrodes of described wordline upper surface; Described conductive through hole lower electrode upper surface is provided with system selector switch device; Described system selector switch device is provided with the conductive interconnection through hole electrode being in contact with it; The logical interconnected pores electrode of described conduction is provided with the semiconductor laser being in contact with it; The transparent conductive electrode being in contact with it it is provided with above described semiconductor laser; The phase-change material layers being in contact with it it is provided with above described transparent conductive electrode; Described phase-change material layers upper surface is provided with conductive reflective; Described conductive reflective upper surface is provided with some conductive through hole top electrodes; Described conductive through hole top electrode upper surface is provided with some bit lines.
Preferably, described wordline is conductive connecting line, and its material is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
Preferably, the material of described conductive through hole lower electrode is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
Preferably, described system selector switch device is for for addressing, unilateral conduction switch and the unilateral conduction switch providing driving electric current.
Preferably, the material of described conductive interconnection through hole electrode is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
Preferably, described conductive reflective is used for the laser of reflector semiconductor laser generation and the electric current of conducting system selector switch device generation, and its material is selected from aluminium, silver, gold, copper, tungsten or titanium.
Preferably, described conductive through hole upper electrode material is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
Preferably, described bit line is conductive connecting line, and material is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
The present invention also comprises the phase change memory structure preparation method that the mixing of a kind of photoelectricity stores, and the method comprises the following steps:
A) providing a substrate, in this substrate, preparation is embedded in some wordline wherein;
B) on described word line layer, some conductive through hole lower electrodes are prepared;
C) on described conductive through hole lower electrode layer, system selector switch device is prepared;
D) continue on described system selector switch device layer, prepare the conductive interconnection through hole electrode being in contact with it;
E) then prepare, on the logical interconnected pores electrode layer of described conduction, the semiconductor laser being in contact with it;
F) prepare, on described semiconductor laser layer, the transparent conductive electrode being in contact with it;
G) prepare, on described transparent conductive electrode layer, the phase-change material layers being in contact with it;
H) continue to prepare conductive reflective on described phase-change material layers;
I) in described conductive reflective, conductive through hole top electrode is then prepared;
J) bit line is formed at described conductive through hole upper electrode layer;
K) all wordline are connected with peripheral circuit with bit line, form the phase change memory chip that complete photoelectricity mixing stores.
Preferably, described semiconductor laser is for generation of laser, and its wavelength is contained infrared to ultraviolet, and power is 0.5-15mW, and the width of pulse laser is contained and flown the second to nanosecond.
Preferably, described transparent conductive electrode is used for laser that transferring semiconductor laser apparatus produces and the electric current that system selector switch device produces, and its transmittance is greater than 80%, resistance value is less than 100000 ohm.
As mentioned above, the feature of the phase-changing memory unit of the present invention is the write and the erasing that utilize laser signal to realize information, utilize electrical signal to realize the reading of information, thus take full advantage of the high speed characteristics of Myocardial revascularization bylaser and the high s/n ratio characteristic of electrical signal reading, it is achieved phase transition storage at a high speed.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of the word line layer that the present invention is prepared into.
Fig. 2 is shown as the structural representation of some conductive through hole lower electrode layers that the present invention is prepared on word line layer.
Fig. 3 is shown as the structural representation of the system selector switch device layer that the present invention is prepared on conductive through hole lower electrode layer.
Fig. 4 is shown as the structural representation of the conductive interconnection through hole electrode layer that the present invention is prepared on system selector switch device layer.
Fig. 5 is shown as the structural representation of the present invention's semiconductor laser layer of preparation on the logical interconnected pores electrode layer of conduction.
Fig. 6 is shown as the structural representation of the transparent conductive electrode layer that the present invention is prepared on semiconductor laser layer.
Fig. 7 is shown as the structural representation of the phase-change material layers that the present invention is prepared on transparent conductive electrode layer.
Fig. 8 is shown as the structural representation of the conductive reflective that the present invention is prepared on phase-change material layers.
Fig. 9 is shown as the structural representation of the present invention's conductive through hole upper electrode layer of preparation on electricity reflecting layer.
Figure 10 is shown as the structural representation of the bit line layer that the present invention is prepared at electric through-hole upper electrode layer.
Element nomenclature
10 substrates;
20-medium layer
100-wordline;
200-conductive through hole lower electrode;
300-system selector switch device;
400-conductive interconnection through hole electrode;
500-semiconductor laser;
600-transparent conductive electrode;
700-phase-change material layers;
800-conductive reflective;
900-conductive through hole top electrode;
110 bit lines
Embodiment
Below by way of specific specific examples, embodiments of the present invention being described, those skilled in the art the content disclosed by this specification sheets can understand other advantages and effect of the present invention easily. The present invention can also be implemented by embodiments different in addition or be applied, and the every details in this specification sheets based on different viewpoints and application, can also carry out various modification or change under the spirit not deviating from the present invention.
Refer to shown in accompanying drawing. It should be noted that, the diagram provided in the present embodiment only illustrates the basic conception of the present invention with illustration, then only relevant assembly but not component count when implementing according to reality, shape and size drafting in display and the present invention in graphic, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Referring to shown in Figure 10, the phase change memory structure that the mixing of a kind of photoelectricity stores, this phase change storage structure comprises the substrate 10 that preparation has some wordline 100; The some conductive through hole lower electrodes 200 being positioned in described wordline; It is provided with system selector switch device 300 above described conductive through hole lower electrode; The conductive interconnection through hole electrode 400 being in contact with it it is provided with above described system selector switch device; It is provided with, above the logical interconnected pores electrode of described conduction, the semiconductor laser 500 being in contact with it; The transparent conductive electrode 600 being in contact with it it is provided with above described semiconductor laser; The phase-change material layers 700 being in contact with it it is provided with above described transparent conductive electrode; Described phase-change material layers is provided with conductive reflective 800; Described conductive reflective is provided with conductive through hole top electrode 900; Described conductive through hole top electrode is provided with bit line 110.
Concrete, the phase change memory implement body preparation method that photoelectricity of the present invention mixing stores is as follows:
Step 1: adopting CVD to prepare polysilicon as wordline 100 over the substrate 10, polysilicon live width is 100nm, and thickness is 200nm, as shown in Figure 1. In the present invention, prepare the method that word line layer 100 adopts and can elect any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method as; Word line layer material can be any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by the nitride of described monometallic material or oxide compound.
Step 2: adopt CVD to prepare SiO2Medium layer 20, utilizes photoetching method at SiO2Medium layer is prepared through hole, and the diameter adopting CVD to prepare W lower electrode layer 200, W electrode in through hole is 70nm, it is highly 200nm, as shown in Figure 2. In the present invention, prepare the method that lower electrode layer 200 adopts and can elect any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method as; Lower electrode material can be any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by the nitride of described electrode monometallic material or oxide compound.
Step 3: prepare system selector switch diode component 300 on conductive through hole lower electrode layer 200, the characteristic dimension (diameter) of diode is 80nm, is highly 2000nm, as shown in Figure 3. In the present invention, the described system selector switch diode component of preparation is any one in homogeneity type diode, heterogeneous type diode, transistor, bipolar junction transistor pipe. The preparation of system selector switch device belongs to the common practise of this area, does not repeat them here.
Step 4: adopt CVD to prepare SiO on system selector switch diode component layer2Medium layer, utilizes photoetching method at SiO2Preparing through hole in medium layer, and adopt CVD to prepare W through-hole interconnection electrode layer in through hole, the diameter of W electrode is 70nm, is highly 100nm, as shown in Figure 4. In the present invention, prepare the method that through-hole interconnection electrode layer 400 adopts and can elect any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method as; Lower electrode material can be any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by the nitride of described electrode monometallic material or oxide compound.
Step 5: prepare semiconductor laser 500 on through-hole interconnection electrode layer 400, as shown in Figure 5. In the present invention, the described semiconductor laser of preparation is any one in laser diode laser apparatus, quantum-well laser, Strained Quantum Well Lasers, quanta cascade laser apparatus, single heterojunction diode laser, double heterojunction diode laser, electron beam excitation semiconductor laser, self-assembly quantum dot laser, surface-emission laser device. The preparation of semiconductor laser belongs to the common practise of this area, does not repeat them here.
Step 6: adopt CVD to prepare SiO on semiconductor laser 5002Medium layer, utilizes photoetching method at SiO2Medium layer is prepared through hole, and the diameter adopting magnetron sputtering method to prepare ITO transparent conductive electrode layer 600, ITO in through hole is 100nm, it is highly 50nm, as shown in Figure 6.
Step 7: adopt magnetron sputtering method, Ge on transparent conductive electrode layer 6002Sb2Te5Alloys target prepares Ge2Sb2Te5Phase-change material layers 700, processing parameter is: background air pressure is 1 �� 10-5Pa, during sputtering, Ar gas air pressure is 0.2Pa, and sputtering power is 200W, and underlayer temperature is 25 DEG C, and film thickness is 50nm, as shown in Figure 7. The method adopted is any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method; Phase change material is any one in chalcogenide compound, GeSb, SiSb and metal oxide, and the preparation method of phase change material Rotating fields is photoetching.
Step 8: adopting magnetron sputtering method, high-purity Al target to prepare Al conductive reflective 800 on phase-change material layers 700, processing parameter is: background air pressure is 1 �� 10-7Pa, during sputtering, Ar gas air pressure is 0.5Pa, and sputtering power is 2000W, and underlayer temperature is 25 DEG C, and film thickness is 70nm, as shown in Figure 8. The method adopted is any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method; Conductive reflective is any one in aluminium, silver, gold, copper, tungsten, titanium and titanium alloys, and the preparation method of conductive reflective structure is photoetching.
Step 9: adopt CVD to prepare SiO in conductive reflective 8002Medium layer, utilizes photoetching method at SiO2Preparing through hole in medium layer, and adopt CVD to prepare W through-hole interconnection upper electrode layer in through hole, the diameter of W electrode is 70nm, is highly 100nm, as shown in Figure 9. In the present invention, prepare the method that conductive through hole upper electrode layer 900 adopts and can elect any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method as; Upper electrode material can be any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by the nitride of described electrode monometallic material or oxide compound.
Step 10: adopting magnetron sputtering method, high-purity Al target to prepare Al bit line layer 110 on conductive through hole top electrode, processing parameter is: background air pressure is 1 �� 10-7Pa, during sputtering, Ar gas air pressure is 0.5Pa, and sputtering power is 2000W, and underlayer temperature is 25 DEG C, and film thickness is 500nm, as shown in Figure 10. In the present invention, prepare the method that bit line layer 110 adopts and can elect any one in sputtering method, method of evaporation, chemical Vapor deposition process, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition area method as; Bit line layer material can be any one in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by the nitride of described monometallic material or oxide compound.
Step 11: finally all wordline are connected with peripheral circuit with bit line, forms the phase change memory chip that complete photoelectricity mixing stores.
It is characteristic of the invention that the write and the erasing that utilize laser signal to realize information, utilize electrical signal to realize the reading of information, thus take full advantage of the high speed characteristics of Myocardial revascularization bylaser and the high s/n ratio characteristic of electrical signal reading, it is achieved phase transition storage at a high speed. In sum, the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is the principle of illustrative the present invention and effect thereof only, but not for limiting the present invention. Above-described embodiment all under the spirit not running counter to the present invention and category, can be modified or change by any person skilled in the art scholar. Therefore, in art, tool usually intellectual, not departing under disclosed spirit and technological thought all the equivalence modifications completed or change, must be contained by the claim of the present invention such as.
Claims (11)
1. the phase change memory structure that a photoelectricity mixing stores, it is characterised in that, this phase change memory structure comprises
Upper surface preparation has the substrate of some wordline;
It is positioned at some conductive through hole lower electrodes of described wordline upper surface;
Described conductive through hole lower electrode upper surface is provided with system selector switch device;
Described system selector switch device is provided with the conductive interconnection through hole electrode being in contact with it;
Described conductive interconnection through hole electrode is provided with the semiconductor laser being in contact with it;
The transparent conductive electrode being in contact with it it is provided with above described semiconductor laser;
The phase-change material layers being in contact with it it is provided with above described transparent conductive electrode;
Described phase-change material layers upper surface is provided with conductive reflective;
Described conductive reflective upper surface is provided with some conductive through hole top electrodes;
Described conductive through hole top electrode upper surface is provided with some bit lines.
2. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterised in that, described wordline is conductive connecting line, and its material is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
3. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterised in that, the material of described conductive through hole lower electrode is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
4. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterised in that, described system selector switch device is for for addressing, unilateral conduction switch and the unilateral conduction switch providing driving electric current.
5. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterised in that, the material of described conductive interconnection through hole electrode is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
6. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterized in that, described conductive reflective is used for the laser of reflector semiconductor laser generation and the electric current of conducting system selector switch device generation, and its material is selected from aluminium, silver, gold, copper, tungsten or titanium.
7. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterised in that, described conductive through hole upper electrode material is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
8. the phase change memory structure that photoelectricity according to claim 1 mixing stores, it is characterised in that, described bit line is conductive connecting line, and material is selected from polysilicon, aluminium, copper, tungsten, titanium, titanium nitride, aluminium nitride titanium or tantalum nitride.
9. the preparation method of the phase change memory structure of a photoelectricity according to claim 1 mixing storage, it is characterised in that, the method comprises the following steps:
A) providing a substrate, in this substrate, preparation is embedded in some wordline wherein;
B) in described wordline, some conductive through hole lower electrodes are prepared;
C) on described conductive through hole lower electrode, system selector switch device is prepared;
D) continue on described system selector switch device, prepare the conductive interconnection through hole electrode being in contact with it;
E) then prepare, on described conductive interconnection through hole electrode, the semiconductor laser being in contact with it;
F) on described semiconductor laser, prepare the transparent conductive electrode being in contact with it;
G) on described transparent conductive electrode, prepare the phase-change material layers being in contact with it;
H) continue to prepare conductive reflective on described phase-change material layers;
I) in described conductive reflective, conductive through hole top electrode is then prepared;
J) on described conductive through hole top electrode, bit line is formed;
K) all wordline are connected with peripheral circuit with bit line, form the phase change memory chip that complete photoelectricity mixing stores.
10. the preparation method of phase change memory structure according to claim 9, it is characterised in that, described semiconductor laser is for generation of laser, and its wavelength is contained infrared to ultraviolet, and power is 0.5-15mW, and the width of pulse laser is contained and flown the second to nanosecond.
The preparation method of 11. phase change memory structures according to claim 9, it is characterized in that, described transparent conductive electrode is used for laser that transferring semiconductor laser apparatus produces and the electric current that system selector switch device produces, and its transmittance is greater than 80%, resistance value is less than 100000 ohm.
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| CN101165935A (en) * | 2006-10-18 | 2008-04-23 | 旺宏电子股份有限公司 | Method for making memory cell device |
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