CN103559140A - Flash data storage method and device - Google Patents
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Abstract
An embodiment of the invention discloses a flash data storage method which includes acquiring storage parameter information of target storage data transferred by an application layer program and data processing parameter information acquired by reading other programs; calculating the interval length of the updated offset address of a flash storage space according to the acquired maximum value of an independent module of the target storage data and the programming times of the flash storage space; calculating storage address regions of the target storage data in the flash storage space; storing the target storage data in the corresponding storage address regions of the flash storage space. The embodiment of the invention further discloses a flash data storage device. By adopting the flash data storage method and device, the service cycle of the flash devices applied to software is prolonged, accordingly the service life of digital products is prolonged, and product use cost is reduced for users.
Description
Technical field
The present invention relates to a kind of electronic applications, relate in particular to a kind of method and device for flash storage data.
Background technology
Flash memory device is with respect to other memory devices, and it has the feature of storage data that can be permanent, so during master routine software and running software, needs the data of lasting storage all to leave in above Flash equipment.But flash memory device exists the restriction of erasable number of times, the erasable number of times of same storage area is more, and error rate is just higher, and the bad piece of generation is also more, and along with flash ageing equipment, device damage rate is also increasing.Independent flash of existing a digital software application for example, flash storage size is 3M, flash serviceable life is 100,000 read-writes.According to common software design scheme, software main program size leaves the position of flash address 0-1M in for 1M, and A size in user data area is 1M, leaves the position of flash address 1-2M in, and B size in user data area is 1M, leaves the position of flash address 2-3M in.Software is as follows to the frequency of utilization in every flash region, erasable 10 times of the average every annual meeting of master routine, erasable 20,000 times of the every annual meeting of user data area A, erasable 1000 times of the every annual meeting in user data area.Software application can cause whole equipment scrapping because the flash region of user data area A is damaged completely after 5 years like this, and namely the limit of the design service life of product is 5 years.
Summary of the invention
Embodiment of the present invention technical matters to be solved is, a kind of method and device for flash storage data is provided.Can increase the life cycle of software to flash equipment, thereby increase the serviceable life of digital product, reduce the use cost of user to product.
In order to solve the problems of the technologies described above, the embodiment of the present invention provides a kind of method for flash storage data, comprising:
Obtaining the target of application layer program transmission stores the parameter information of data and reads the data processing parameter information that other programs get, the parameter information of described target storage data comprises the logical address of described target storage data, and described data processing parameter information comprises the maximal value of standalone module and the programming number of times of flash storage space in described target storage data;
According to the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that read, calculate the offset address burst length of the renewal of flash storage space;
According to the logical address of described target storage data of the described application layer program transmission getting and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data in the memory address region of described flash storage space;
According to the described target storage data that calculate, in the memory address region of described flash storage space, described target storage data are stored in to the memory address region of corresponding described flash storage space.
Wherein, the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that described basis reads, the offset address burst length that calculates the renewal of flash storage space comprises:
Calculate in described target storage data the maximal value of standalone module and the product of described flash programming number of times as the offset address burst length of the renewal of described flash storage space.
Wherein, the parameter information of described target storage data also comprises the length of described target storage data, the offset address burst length of the renewal of the logical address of the described target storage data of the described application layer program transmission that described basis gets and the described flash storage space calculating, calculates described target storage data and comprises in the memory address region of described flash storage space:
According to the described application layer program getting, transmit the logical address of described target storage data and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data at the initial physical address of described flash storage space;
Offset address burst length according to the renewal of the length of the described target storage data of the described application layer program transmission getting and logical address and the described flash storage space that calculates, calculates described target storage data at the termination physical address of described flash storage space.
Wherein, the described target storage data that described basis calculates are in the memory address region of described flash storage space, and the memory address region that described target storage data are stored in to corresponding described flash storage space comprises:
If the described initial physical address calculating is greater than described termination physical address, the described initial physical address that described target storage data is stored in respectively to described flash storage space arrives the memory address region of last address of described flash storage space and the memory address region that the first address of described flash storage space arrives described termination physical address.
Wherein, described data processing parameter information also comprises the whole burst length of flash storage space, the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that described basis reads, the offset address burst length that calculates the renewal of flash storage space also comprises:
If the offset address burst length of the renewal of the described flash storage space calculating is greater than the whole burst length of the described flash storage space getting, the programming number of times of described flash storage space is changed to 1.
Correspondingly, the embodiment of the present invention also provides a kind of device for flash storage data, comprising:
Parameter information acquisition module, for obtaining the target of application layer program transmission, store the parameter information of data and read the data processing parameter information that other programs get, the parameter information of described target storage data comprises the logical address of described target storage data, and described data processing parameter information comprises the maximal value of standalone module and the programming number of times of flash storage space in described target storage data;
Offset address computing module, for according to the maximal value of the described target storage data standalone module reading and the programming number of times of described flash storage space, calculates the offset address burst length of the renewal of flash storage space;
Memory address computing module, for according to the logical address of described target storage data of the described application layer program transmission getting and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data in the memory address region of described flash storage space;
Target data memory module, for storing data in the memory address region of described flash storage space according to the described target calculating, is stored in described target storage data in the memory address region of corresponding described flash storage space.
Wherein, described offset address computing module comprises:
Product computing unit, for calculating the maximal value of described target storage data standalone module and the product of described flash programming number of times as the offset address burst length of the renewal of described flash storage space.
Wherein, the parameter information of described target storage data also comprises the length of described target storage data, and described memory address computing module comprises:
Start address computing unit, for transmit the logical address of described target storage data and the offset address burst length of the renewal of the described flash storage space calculating according to the described application layer program getting, calculate described target storage data at the initial physical address of described flash storage space;
Termination address computing unit, for according to the offset address burst length of the renewal of the length of the described target storage data of the described application layer program transmission that gets and logical address and the described flash storage space that calculates, calculate described target storage data at the termination physical address of described flash storage space.
Wherein, described target data memory module comprises:
Memory address identifying unit, if be greater than described termination physical address for the described initial physical address calculating, the described initial physical address that described target storage data is stored in respectively to described flash storage space arrives the memory address region of last address of described flash storage space and the memory address region that the first address of described flash storage space arrives described termination physical address.
Wherein, described offset address computing module also comprises:
Offset address identifying unit, if be greater than the whole burst length of the described flash storage space getting for the offset address burst length of the renewal of the described flash storage space that calculates, changes to 1 by the programming number of times of described flash storage space.
Implement the embodiment of the present invention, there is following beneficial effect: the data processing parameter information getting according to the parameter information of the target storage data of the application layer program transmission getting and other programs of reading, calculate the offset address burst length of the renewal of flash storage space, and further calculate described target storage data in the memory address region of described flash storage space, memory address region according to the described target storage data that calculate at described flash storage space, described target storage data are stored in to the memory address region of corresponding described flash storage space.Adopt the embodiment of the present invention can increase the life cycle of software to flash equipment, thereby increase the serviceable life of digital product, reduce the use cost of user to product.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the first embodiment process flow diagram of the method for flash storage data that proposes of the present invention;
Fig. 2 is the structural representation of the device for flash storage data that proposes of the present invention;
Fig. 3 is the structural representation of the device offset address computing module for flash storage data that proposes of the present invention;
Fig. 4 is the structural representation of the device memory address computing module for flash storage data that proposes of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Please refer to Fig. 1, Fig. 1 is the first embodiment process flow diagram of the method for flash storage data that proposes of the present invention.First the embodiment of the present invention calculates the offset address burst length of the renewal of flash storage space, then calculate target storage data in the memory address region of flash storage space, finally described target storage data are stored in to the memory address region of corresponding described flash storage space, the step of the embodiment of the present invention at least comprises as shown in the figure:
Step S110, obtaining the target of application layer program transmission stores the parameter information of data and reads the data processing parameter information that other programs get, the parameter information of described target storage data comprises the logical address of described target storage data, and described data processing parameter information comprises the maximal value of standalone module and the programming number of times of flash storage space in described target storage data.In specific implementation, application layer operates flash, described data processing parameter information need to be passed to and drive layer, then by driving layer to complete the direct control to flash, the parameter of wherein said application layer transmission comprises the logical address tmp_addr of target stored parameter, this logical address tmp_addr is mainly used in the addressing of target stored parameter, also referred to as relative address.In addition, drive layer will calculate actual operation address, also need to read the data processing parameter information that other programs get, described data processing parameter information comprises the maximal value STEP_SIZE of standalone module and the programming times N of flash storage space in described target storage data simultaneously.Wherein, in described target storage data, the maximal value STEP_SIZE of standalone module can directly read and obtain from flash planning table, this planning table has recorded the start address and the size that takies flash storage space of each standalone module in program, and after program design, standalone module size is fixing.The programming times N of flash storage space can obtain by directly reading the programming number of times of the flash storage space that other programs get, and described flash storage space is target storage data of programming again often, and the programming times N of flash storage space just adds 1.
Step S120, according to the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that read, calculates the offset address burst length of the renewal of flash storage space.Data processing parameter information as described in step S110 also comprises the whole burst length MAX_SIZE of flash storage space.In specific implementation, the offset address burst length of the renewal of flash storage space is the product of the maximal value of standalone module and the programming number of times of described flash storage space in described target storage data, the i.e. value of STEP_SIZE*N.If the offset address burst length STEP_SIZE*N of the renewal of the described flash storage space calculating is greater than the whole burst length MAX_SIZE of the described flash storage space getting, the programming number of times of described flash storage space is changed to 1, be that next flash storage space is again after programming, first with N=1, calculate the offset address burst length of the renewal of flash storage space, the programming times N of the flash storage space after programming each time that then superposes successively.
Step S130, according to the logical address of described target storage data of the described application layer program transmission getting and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data in the memory address region of described flash storage space.The length of target storage data as described in the parameter information of the target storage data as described in step S110 also comprises.In specific implementation, described target storage data comprise in the memory address region of described flash storage space: initial physical address tmp_addr_star and termination physical address tmp_addr_end.First, according to the described application layer program getting, transmit the logical address of described target storage data and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data at the initial physical address tmp_addr_star of described flash storage space.Wherein, the computing method of the initial physical address tmp_addr_star of described flash storage space are: tmp_addr_star=(tmp_addr+STEP_SIZE*N) %MAX_SIZE.Secondly, offset address burst length according to the renewal of the length of the described target storage data of the described application layer program transmission getting and logical address and the described flash storage space that calculates, calculates described target storage data at the termination physical address tmp_addr_end of described flash storage space.Wherein, the computing method of the termination physical address tmp_addr_end of described flash storage space are: tmp_addr_end=(tmp_addr+len+STEP_SIZE*N) %MAX_SIZE.
Step S140, in the memory address region of described flash storage space, is stored in described target storage data in the memory address region of corresponding described flash storage space according to the described target storage data that calculate.In specific implementation, if the described initial physical address tmp_addr_star calculating is less than described termination physical address tmp_addr_end, will described target storage data be stored in to the described initial physical address of described flash storage space to the memory address region (that is: tmp_addr_star->tmp_addr_end) of described termination physical address, if the described initial physical address tmp_addr_star calculating is greater than described termination physical address tmp_addr_end, the described initial physical address that described target storage data is stored in respectively to described flash storage space arrives the memory address region (that is: tmp_addr_star->tmp_addr_last) of last address of described flash storage space and the memory address region (that is: tmp_addr_head->tmp_addr_end) that the first address of described flash storage space arrives described termination physical address.
Please refer to Fig. 2, Fig. 2 is the structural representation of the device for flash storage data that proposes of the present invention, described device at least comprises as shown in the figure: parameter information acquisition module 210, offset address computing module 220, memory address computing module 230 and target data memory module 240, wherein:
Parameter information acquisition module 210, for obtaining the target of application layer program transmission, store the parameter information of data and read the data processing parameter information that other programs get, the parameter information of described target storage data comprises the logical address of described target storage data, and described data processing parameter information comprises the maximal value of standalone module and the programming number of times of flash storage space in described target storage data.Concrete, application layer operates flash, described data processing parameter information need to be passed to and drive layer, then by driving layer to complete the direct control to flash, the parameter of wherein said application layer transmission comprises the logical address tmp_addr of target stored parameter, this logical address tmp_addr is mainly used in the addressing of target stored parameter, also referred to as relative address.In addition, drive layer will calculate actual operation address, also need to read the data processing parameter information that other programs get, described data processing parameter information comprises the maximal value STEP_SIZE of standalone module and the programming times N of flash storage space in described target storage data simultaneously.Wherein, in described target storage data, the maximal value STEP_SIZE of standalone module can directly read and obtain from flash planning table, this planning table has recorded the start address and the size that takies flash storage space of each standalone module in program, and after program design, standalone module size is fixing.The programming times N of flash storage space can obtain by directly reading the programming number of times of the flash storage space that other programs get, and described flash storage space is target storage data of programming again often, and the programming times N of flash storage space just adds 1.
Offset address computing module 220, for the described target reading according to parameter information acquisition module 210, store the maximal value of data standalone module and the programming number of times of described flash storage space, calculate the offset address burst length of the renewal of flash storage space.Data processing parameter information as described in above-mentioned parameter information acquisition module 210 also comprises the whole burst length MAX_SIZE of flash storage space.Concrete, offset address computing module 220 also comprises product computing unit 321 and offset address identifying unit 322 as shown in Figure 3, wherein:
Offset address identifying unit 322, if the offset address burst length STEP_SIZE*N of the renewal of the described flash storage space calculating for product computing unit 321 is greater than the whole burst length MAX_SIZE of the described flash storage space getting, the programming number of times of described flash storage space is changed to 1, be that next flash storage space is again after programming, first with N=1, calculate the offset address burst length of the renewal of flash storage space, the programming times N of the flash storage space after programming each time that then superposes successively.
Memory address computing module 230, for the described target storage logical address of data of the described application layer program transmission that gets according to parameter information acquisition module 210 and the offset address burst length of the renewal of the described flash storage space that offset address computing module 220 calculates, calculate described target storage data in the memory address region of described flash storage space.The length of target storage data as described in the parameter information of the target storage data as described in above-mentioned parameter information acquisition module 210 also comprises.Concrete, described target storage data comprise in the memory address region of described flash storage space: initial physical address tmp_addr_star and termination physical address tmp_addr_end, described memory address computing module 230 also comprises start address computing unit 431 and termination address computing unit 432 as shown in Figure 4, wherein:
Start address computing unit 431, for the described application layer program getting according to parameter information acquisition module 210, transmit the offset address burst length of the described target storage logical address of data and the renewal of the described flash storage space that offset address computing module 220 calculates, calculate described target storage data at the initial physical address tmp_addr_star of described flash storage space.Wherein, the computing method of the initial physical address tmp_addr_star of described flash storage space are: tmp_addr_star=(tmp_addr+STEP_SIZE*N) %MAX_SIZE.
Termination address computing unit 432, the offset address burst length of the renewal of the described flash storage space calculating for the length of the described target storage data of the described application layer program transmission that gets according to parameter information acquisition module 210 and logical address and offset address computing module 220, calculates described target storage data at the termination physical address tmp_addr_end of described flash storage space.Wherein, the computing method of the termination physical address tmp_addr_end of described flash storage space are: tmp_addr_end=(tmp_addr+len+STEP_SIZE*N) %MAX_SIZE.
Target data memory module 240, for the described target calculating according to memory address computing module 230, store data in the memory address region of described flash storage space, described target storage data are stored in to the memory address region of corresponding described flash storage space.Concrete, target data memory module 240 comprises memory address identifying unit, if the described initial physical address tmp_addr_star calculating is less than described termination physical address tmp_addr_end, will described target storage data be stored in to the described initial physical address of described flash storage space to the memory address region (that is: tmp_addr_star->tmp_addr_end) of described termination physical address, if the described initial physical address tmp_addr_star calculating is greater than described termination physical address tmp_addr_end, the described initial physical address that described target storage data is stored in respectively to described flash storage space arrives the memory address region (that is: tmp_addr_star->tmp_addr_last) of last address of described flash storage space and the memory address region (that is: tmp_addr_head->tmp_addr_end) that the first address of described flash storage space arrives described termination physical address.
The embodiment of the present invention provides a kind of method and device for flash storage data, the data processing parameter information getting according to the parameter information of the target storage data of the application layer program transmission getting and other programs of reading, calculate the offset address burst length of the renewal of flash storage space, and further calculate described target storage data in the memory address region of described flash storage space, memory address region according to the described target storage data that calculate at described flash storage space, described target storage data are stored in to the memory address region of corresponding described flash storage space.Adopt the embodiment of the present invention can increase the life cycle of software to flash equipment, thereby increase the serviceable life of digital product, reduce the use cost of user to product.
One of ordinary skill in the art will appreciate that all or part of flow process realizing in above-described embodiment method, to come the hardware that instruction is relevant to complete by computer program, described program can be stored in a computer read/write memory medium, this program, when carrying out, can comprise as the flow process of the embodiment of above-mentioned each side method.Wherein, described storage medium can be magnetic disc, CD, read-only store-memory body (Read-Only Memory, ROM) or random store-memory body (Random Access Memory, RAM) etc.
Above disclosed is only preferred embodiment of the present invention, certainly can not limit with this interest field of the present invention, and the equivalent variations of therefore doing according to the claims in the present invention, still belongs to the scope that the present invention is contained.
Claims (10)
1. for a method for flash storage data, it is characterized in that, described method comprises:
Obtaining the target of application layer program transmission stores the parameter information of data and reads the data processing parameter information that other programs get, the parameter information of described target storage data comprises the logical address of described target storage data, and described data processing parameter information comprises the maximal value of standalone module and the programming number of times of flash storage space in described target storage data;
According to the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that read, calculate the offset address burst length of the renewal of flash storage space;
According to the logical address of described target storage data of the described application layer program transmission getting and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data in the memory address region of described flash storage space;
According to the described target storage data that calculate, in the memory address region of described flash storage space, described target storage data are stored in to the memory address region of corresponding described flash storage space.
2. the method for flash storage data as claimed in claim 1, it is characterized in that, the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that described basis reads, the offset address burst length that calculates the renewal of flash storage space comprises:
Calculate in described target storage data the maximal value of standalone module and the product of described flash programming number of times as the offset address burst length of the renewal of described flash storage space.
3. the method for flash storage data as claimed in claim 1, it is characterized in that, the parameter information of described target storage data also comprises the length of described target storage data, the offset address burst length of the renewal of the logical address of the described target storage data of the described application layer program transmission that described basis gets and the described flash storage space calculating, calculates described target storage data and comprises in the memory address region of described flash storage space:
According to the described application layer program getting, transmit the logical address of described target storage data and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data at the initial physical address of described flash storage space;
Offset address burst length according to the renewal of the length of the described target storage data of the described application layer program transmission getting and logical address and the described flash storage space that calculates, calculates described target storage data at the termination physical address of described flash storage space.
4. the method for flash storage data as claimed in claim 3, it is characterized in that, the described target storage data that described basis calculates are in the memory address region of described flash storage space, and the memory address region that described target storage data are stored in to corresponding described flash storage space comprises:
If the described initial physical address calculating is greater than described termination physical address, the described initial physical address that described target storage data is stored in respectively to described flash storage space arrives the memory address region of last address of described flash storage space and the memory address region that the first address of described flash storage space arrives described termination physical address.
5. the method for flash storage data as claimed in claim 2, it is characterized in that, described data processing parameter information also comprises the whole burst length of flash storage space, the maximal value of standalone module and the programming number of times of described flash storage space in the described target storage data that described basis reads, the offset address burst length that calculates the renewal of flash storage space also comprises:
If the offset address burst length of the renewal of the described flash storage space calculating is greater than the whole burst length of the described flash storage space getting, the programming number of times of described flash storage space is changed to 1.
6. for a device for flash storage data, it is characterized in that, described device comprises:
Parameter information acquisition module, for obtaining the target of application layer program transmission, store the parameter information of data and read the data processing parameter information that other programs get, the parameter information of described target storage data comprises the logical address of described target storage data, and described data processing parameter information comprises the maximal value of standalone module and the programming number of times of flash storage space in described target storage data;
Offset address computing module, for according to the maximal value of the described target storage data standalone module reading and the programming number of times of described flash storage space, calculates the offset address burst length of the renewal of flash storage space;
Memory address computing module, for according to the logical address of described target storage data of the described application layer program transmission getting and the offset address burst length of the renewal of the described flash storage space calculating, calculate described target storage data in the memory address region of described flash storage space;
Target data memory module, for storing data in the memory address region of described flash storage space according to the described target calculating, is stored in described target storage data in the memory address region of corresponding described flash storage space.
7. the device for flash storage data as claimed in claim 6, is characterized in that, described offset address computing module comprises:
Product computing unit, for calculating the maximal value of described target storage data standalone module and the product of described flash programming number of times as the offset address burst length of the renewal of described flash storage space.
8. the device for flash storage data as claimed in claim 6, is characterized in that, the parameter information of described target storage data also comprises the length of described target storage data, and described memory address computing module comprises:
Start address computing unit, for transmit the logical address of described target storage data and the offset address burst length of the renewal of the described flash storage space calculating according to the described application layer program getting, calculate described target storage data at the initial physical address of described flash storage space;
Termination address computing unit, for according to the offset address burst length of the renewal of the length of the described target storage data of the described application layer program transmission that gets and logical address and the described flash storage space that calculates, calculate described target storage data at the termination physical address of described flash storage space.
9. the device for flash storage data as claimed in claim 8, is characterized in that, described target data memory module comprises:
Memory address identifying unit, if be greater than described termination physical address for the described initial physical address calculating, the described initial physical address that described target storage data is stored in respectively to described flash storage space arrives the memory address region of last address of described flash storage space and the memory address region that the first address of described flash storage space arrives described termination physical address.
10. the device for flash storage data as claimed in claim 7, is characterized in that, described offset address computing module also comprises:
Offset address identifying unit, if be greater than the whole burst length of the described flash storage space getting for the offset address burst length of the renewal of the described flash storage space that calculates, changes to 1 by the programming number of times of described flash storage space.
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