CN103557944B - A kind of carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity - Google Patents
A kind of carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity Download PDFInfo
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- CN103557944B CN103557944B CN201310506884.3A CN201310506884A CN103557944B CN 103557944 B CN103557944 B CN 103557944B CN 201310506884 A CN201310506884 A CN 201310506884A CN 103557944 B CN103557944 B CN 103557944B
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Abstract
The present invention relates to a kind of carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity, does is it based on carbon nano-tube (carbon? nano-tube, CNT) the micro-cantilever infrared detection sensor combined with standard silicon process, this sensor designs and manufactures two by standard silicon process has spacing and unsettled micro-cantilever, then by dielectrophoresis phenomenon, CNT is successfully arranged and rides over above two adjacent microcantilever beams.By micro-cantilever, the deformation of soft CNT driven to the reacted deformation of infrared ray and trigger the change of its resistance.The present invention have volume little, lightweight, be easy to the advantages such as volume production, low cost, low-power consumption, high sensitivity.The present invention can with the complementary metal oxide semiconductor (CMOS) (complementary of standard? matal-oxide-semiconductor? transistor, CMOS) sensing circuit carries out single-chip integration, and can by a large amount of arrayed applications in infrared imaging.
Description
Technical field
The present invention relates to a kind of volume little, lightweight, be easy to volume production, low cost, low-power consumption, highly sensitive carbon nano-tube infrared sensor, can by a large amount of arrayed applications in infrared imaging.
Background technology
Infrared sensor mainly contains two kinds of structure types: bolometer type and micro-overarm type.The wherein manufacture craft more complicated of the infrared sensor of bolometer type, simultaneously not exclusively compatible with the silicon technology of standard, cause the production cost in its volume production higher than micro-overarm type infrared sensor.Common micro-overarm sensor is single suspension beam structure, below the top of beam, connect a capacitance detecting assembly.After Infrared irradiation, the deformation that overarm produces makes the electric capacity between beam and substrate change, thus utilizes its capacitance detecting assembly to draw its measurement result.The method solves the defect of bolometer structure when volume production in high cost, but its sensitivity reduces owing to receiving the restriction of capacitance sensing.
On the other hand, the generation of carbon nano-tube causes the concern of each research field and studies and performance evaluation it, wherein research about carbon nano-tube resistance variation characteristic find carbon nano-tube the deformation that bends, compressional deformation and tensile deformation time, its resistance variations is clearly.This characteristic is employed in the present invention, as the core of the reaction mechanism of infrared sensor.In addition, carbon nano-tube itself also has certain reaction to infrared light, and its reaction is the enhancing along with infrared light, and resistance value reduces, and this is consistent with making its bending effect reached, and thus can further increase its reaction sensitivity.Meanwhile, while Nano-technology Development, the Dynamic controlling for micro-nano object there has also been very large progress.Wherein dielectrophoresis phenomenon is ripe in the application of nanometer technology, is mainly used in the separation of cell, the aligning of nano particle.Under the support of this technology, the making of the infrared sensor based on carbon nano-tube proposed by the invention becomes possibility.
Summary of the invention
The technical problem to be solved in the present invention is: provide a kind of based on carbon nano-tube (carbonnano-tube, CNT) the micro-cantilever infrared detection sensor combined with standard silicon process, this sensor be a kind of volume little, lightweight, be easy to volume production, low cost, low-power consumption, highly sensitive carbon nano-tube infrared sensor.
The technical scheme that the present invention solves the problems of the technologies described above employing is: a kind of low-power-consumptiohigh-sensitivity high-sensitivity carbon nano-tube infrared sensor, by resistance responding layer, micro-overarm upper strata, micro-overarm lower floor, substrate articulamentum, basalis forms, resistance responding layer is overlapped on the slit place between two micro-overarm lower floors, micro-overarm upper strata is attached to above micro-overarm lower floor, micro-overarm lower floor major part area is unsettled, two ends are attached to above substrate articulamentum, substrate articulamentum face on the base layer, compared with micro-overarm upper strata, micro-overarm lower floor two ends are slightly long, center section overlaps with micro-overarm upper strata, and form micro-suspension beam structure by substrate articulamentum, the root of micro-overarm lower floor not the part that covers by micro-overarm upper strata as the resistance measurement of electrode for total, simultaneously, the top of micro-overarm lower floor not the part that covers by micro-overarm upper strata as the connecting portion of resistance responding layer.
Further, described resistance responding layer is formed by a large amount of carbon nanotube arrangement, convergence, under the effect of Van der Waals force, by the distinctive flexibility of carbon nano-tube and conductive characteristic, forms a kind of distinctive flexible resistor film.
Further, described micro-overarm upper strata is made up of silicon nitride material, and its thickness needs to optimize, and not only will ensure certain energy absorption when Infrared irradiation, also needs to ensure certain light transmission rate.
Further, described micro-overarm lower floor is made up of aluminum, and its thickness needs to optimize, and needs to ensure not only will ensure certain energy absorption when Infrared irradiation, also needs to ensure certain safe deformation.
Further, described substrate articulamentum is made up of silica material.
Further, described basalis is fabricated from a silicon.
The principle of technical solution of the present invention is:
Based on the infrared sensor of micro-suspension beam structure, according to Fig. 1, micro-overarm upper strata 2 is made by the different silicon nitride of thermal expansivity and aluminium foil respectively from micro-lower floor 3 of hanging oneself from a beam.Meanwhile, micro-overarm upper strata 2 requires to ensure certain light transmission rate when Infrared irradiation is at this device surface.And then make micro-overarm lower floor 3 also absorb heat generation deformation due to Infrared irradiation.With this understanding, due to micro-overarm upper strata 2 and micro-the different of lower floor 3 thermal expansivity of hanging oneself from a beam, there is the deformation of upward direction in micro-overarm.This deformation can cause the resistance responding layer 1 being across micro-overarm upper strata 2 that deformation occurs, and then causes the change of its resistance.Because resistance responding layer 1 is formed by arranging by a large amount of carbon nano-tube, add its sensitivity.In addition, carbon nano-tube itself also has certain reaction to infrared light, and its reaction is the enhancing along with infrared light, and resistance value reduces, and this is consistent with making its bending effect reached, and thus further adds its reaction sensitivity.According to Fig. 2, the part that the measurement of carbon nanotube layer resistance is exposed by micro-overarm lower floor 3 root is measured.
The present invention's advantage is compared with prior art:
1, the present invention is owing to adopting standard semi-conductor processes, due to this device can with the complementary metal oxide semiconductor (CMOS) (complementarymatal-oxide-semiconductortransistor of standard, CMOS) sensing circuit carries out single-chip integration, therefore has accessible site, low-power consumption, little, the lightweight advantage of volume.
2, simultaneously, manufacturing technology and the dielectrophoresis micro-nano material permutation technology of carbon nano-tube are ripe, the homogeneity of nano-sized carbon tube layer in volume production process can be controlled by controlling time of the concentration of CNT inside dilution and dielectrophoresis, voltage and frequency, making it have the advantage of low cost, high volume production degree.
3, main, by the high reaction capacity of CNT and the multiplication effect that reached by the arrangement of a large amount of CNT, realize highly sensitive feature.
Accompanying drawing explanation
Fig. 1 is sectional view of the present invention;
Fig. 2 is vertical view of the present invention;
Fig. 3 is that the reaction of multiple carbon nano-tube to infrared light is compared;
Fig. 4 is the microphotograph after carbon nanotube arrangement;
Fig. 5 is before micro-overarm deformation expression figure (a) deformation, after (b) deformation;
Fig. 6 is before carbon nano-tube deformation expression figure (a) deformation, after (b) deformation;
Fig. 7 is micro-overarm the simulation experiment result;
Fig. 8 is data acquisition process flow diagram of the present invention.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing and specific embodiment.
As shown in Figure 1, 2, be made up of resistance responding layer 1, micro-overarm upper strata 2, micro-overarm lower floor 3, substrate articulamentum 4, basalis 5 for the technology of the present invention solution comprises, resistance responding layer 1 is overlapped on the slit place between two micro-overarm lower floors 3, micro-overarm upper strata 2 is attached to above micro-overarm lower floor 3, the most of area of micro-overarm lower floor 3 is unsettled, two ends are attached to above substrate articulamentum 4, and substrate articulamentum 4 is on basalis 5.Compared with micro-overarm upper strata 2, micro-overarm lower floor 3 two ends are slightly long, and center section overlaps with micro-overarm upper strata 2, and forms micro-suspension beam structure by substrate articulamentum 4.The root of micro-overarm lower floor 3 not the part that covers by micro-overarm upper strata 2 as the resistance measurement of electrode for total.Meanwhile, the top of micro-overarm lower floor 3 not the part that covers by micro-overarm upper strata 2 as the connecting portion of resistance responding layer 1.
The invention described above resistance responding layer 1 used is aligned under the effect of dielectrophoresis by a large amount of carbon nano-tube, converges and formed.Micro-overarm upper strata 2 is the silicon nitride materials made by chemical vapour deposition.Micro-overarm lower floor 3 is the aluminium foils formed by vapor deposition process.Substrate articulamentum 4 utilizes silicon base be oxidized and made by etching method.Basalis 5 is made up of silicon wafer.
First on basalis 5, one deck monox is formed by chemical vapour deposition, then utilize vapor deposition process to make aluminium foil and form micro-overarm lower floor 3 by light leak method, then make silicon nitride layer by chemical vapour deposition and again form micro-overarm upper strata 2 by light leak method.Next step is the preparation of resistance responding layer 1.Before preparation, it is the strongest to compare the reaction learning single-walled carbon nanotubes pair and infrared light by experiment, as Fig. 3, therefore applies in the present invention.Utilize the adjustment of the adjustment of voltage and frequency and carbon nano-tube solution concentration that neat for a large amount of carbon nano-tube is arranged in device center and rides on the two ends of micro-overarm lower floor 3, as Fig. 4 by dielectrophoresis phenomenon.Finally utilize etching method to be etched by the substrate articulamentum 4 above the centre of basalis 5, make micro-overarm lower floor 3 unsettled, thus form device proposed by the invention.
The present invention is in specific implementation process, and because sensing capability is determined by the change in resistance of carbon nano-tube, therefore, micro-overarm upper strata 2 is base values that this device is measured with the bending change amplitude of micro-lower floor 3 of hanging oneself from a beam.And then known, micro-overarm upper strata 2 and the optimization of the thickness of micro-lower floor 3 of hanging oneself from a beam are and important.Its Optimized Approaches can utilize following formula to realize:
Wherein, t1 is micro-overarm upper strata 2(silicon nitride) thickness, t2 is micro-overarm lower floor 3(aluminium foil layer) thickness, λ 1 is the pyroconductivity on micro-overarm upper strata 2, λ 2 is the pyroconductivity of micro-overarm lower floor 3, W is the width of micro-overarm, and K is the specific inductive capacity of micro-overarm lower floor 3, and a1 is the heat-conduction coefficient on micro-overarm upper strata 2, a2 is the heat-conduction coefficient of micro-overarm lower floor 3, P is infrared radiant power, and δ is that lower floor 3 deformation quantity is hung oneself from a beam as shown in Figure 5 with micro-in micro-overarm upper strata 2, and η is Infrared Absorption Coefficient.Before and after carbon nano-tube deformation, schematic diagram as shown in Figure 6.
By finite element simulation, draw as Fig. 7 conclusion.This conclusion illustrates: 1. in the present invention, micro-overarm lower floor 3 uses the deformation effects of metallic aluminium (Al) paper tinsel will greatly be better than using gold (Au) paper tinsel and chromium (Cr) paper tinsel; 2., when micro-overarm upper strata 2 is about 0.3 with micro-lower floor's ratio of hanging oneself from a beam in the present invention, micro-overarm has largest deformation.Meanwhile, consider the problem of ir transmissivity and reflectivity, determine that its design parameter is as shown in table 1 through emulation.Long 120 μm of effective micro-overarm, wide 5 μm, micro-overarm upper strata (silicon nitride) thickness 0.7 μm, micro-overarm lower floor (aluminium foil) layer thickness 0.2 μm, effective length of carbon nanotube 5 μm.
Table 1
Data acquisition of the present invention as shown in Figure 8, first to ensure when not having extraneous thermal distortion to affect at unglazed photograph, by reading at electrode place input voltage and electric current and preserving the resistance of the resistance responding layer 1 recorded, and as standard value.Then, under device being put in infrared light photograph, and the resistance of resistance responding layer 1 is now measured.By this result and initial to result compare and obtain its difference.Judge infrared intensity according to this difference and exported by output.Concrete steps are as follows:
Step 1), unglazed according to time, read by input voltage and electric current and preserve carbon nanotube layer resistance as standard value;
By reading at electrode place (on substrate articulamentum 4, micro-overarm lower floor 3 has more the part on micro-overarm upper strata 2) input voltage and electric current and the resistance of resistance responding layer 1 measured by preserving, and as standard value ref.
Step 2), device is exposed to infrared light according under;
Step 3), measure now carbon nanotube layer resistance and with standard comparing, preservation;
Step 4), the difference determining between standard value;
Concrete, step 2) device of the present invention is put in infrared light to be measured according under, and measure the resistance of resistance responding layer 1 now in step 3), and as measured value.This result and the result obtained at first are compared and obtain its difference DELTA a.
Step 5), judge the intensity of infrared light according to difference;
Step 6), result represent at output terminal
Concrete, step 5) utilizes formula R=ref+ Δ a × S according to this difference DELTA a
pjudge infrared intensity and carry out exporting (R is end value) with display module by exporting in step 6).
The not disclosed in detail part of the present invention belongs to the known technology of this area.
Although be described the illustrative embodiment of the present invention above; so that the technician of this technology neck understands the present invention; but should be clear; the invention is not restricted to the scope of embodiment; to those skilled in the art; as long as various change to limit and in the spirit and scope of the present invention determined, these changes are apparent, and all innovation and creation utilizing the present invention to conceive are all at the row of protection in appended claim.
Claims (5)
1. the carbon nano-tube infrared sensor of a low-power-consumptiohigh-sensitivity high-sensitivity, it is characterized in that: by resistance responding layer (1), micro-overarm upper strata (2), micro-overarm lower floor (3), substrate articulamentum (4), basalis (5) forms, resistance responding layer (1) is overlapped on the slit place between two micro-overarms lower floor (3), micro-overarm upper strata (2) is attached to above micro-overarm lower floor (3), the most of area of micro-overarm lower floor (3) is unsettled, two ends are attached to above substrate articulamentum (4), substrate articulamentum (4) is on basalis (5), compared with micro-overarm upper strata (2), micro-overarm lower floor (3) two ends are slightly long, center section overlaps with micro-overarm upper strata (2), and form micro-suspension beam structure by substrate articulamentum (4), the root of micro-overarm lower floor (3) not the part that covers by micro-overarm upper strata (2) as electrode, for the resistance measurement of total, simultaneously, the top of micro-overarm lower floor (3) not the part that covers by micro-overarm upper strata (2) as the connecting portion of resistance responding layer (1),
Described resistance responding layer (1) is formed by a large amount of carbon nanotube arrangement, convergence, under the effect of Van der Waals force, by the distinctive flexibility of carbon nano-tube and conductive characteristic, forms a kind of distinctive flexible resistor film.
2. the carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity according to claim 1, it is characterized in that: described micro-overarm upper strata (2) is made up of silicon nitride material, and its thickness needs to optimize, not only to ensure certain energy absorption when Infrared irradiation, also need to ensure certain light transmission rate.
3. the carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity according to claim 1, it is characterized in that: described micro-overarm lower floor (3) is made up of aluminum, and its thickness needs to optimize, need to ensure not only will ensure certain energy absorption when Infrared irradiation, also need to ensure certain safe deformation.
4. the carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity according to claim 1, is characterized in that: described substrate articulamentum (4) is made up of silica material.
5. the carbon nano-tube infrared sensor of low-power-consumptiohigh-sensitivity high-sensitivity according to claim 1, is characterized in that: described basalis (5) is fabricated from a silicon.
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| CN104071742A (en) * | 2014-06-12 | 2014-10-01 | 南方科技大学 | Double-cantilever infrared detector based on single-walled carbon nanotube and forming method thereof |
| CN104359561B (en) * | 2014-11-21 | 2017-10-17 | 电子科技大学 | A kind of flexible infrared sensor based on carbon nano pipe array and preparation method thereof |
| CN104724661A (en) * | 2015-03-18 | 2015-06-24 | 上海交通大学 | Three-dimensional multi-layer micronano double-material micro-beam composite structure and application thereof |
| CN104843628B (en) * | 2015-05-06 | 2016-11-02 | 东南大学 | A kind of silicon cantilever structure and preparation method thereof |
| CN104891424B (en) * | 2015-05-28 | 2016-08-17 | 东北大学 | A kind of novel parallel Electric field photoelectric chip ordering about CNT chaining |
| CN111504934B (en) * | 2020-05-19 | 2024-07-05 | 浙江大学 | Adjustable infrared heat radiator based on double-suspension structure |
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| JP4374597B2 (en) * | 2004-02-03 | 2009-12-02 | 光照 木村 | Temperature difference detection method, temperature sensor, and infrared sensor using the same |
| CN101566643B (en) * | 2008-04-22 | 2012-05-09 | 中国计量学院 | Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof |
| US8455828B1 (en) * | 2011-05-09 | 2013-06-04 | Magnolia Optical Technologies, Inc. | Infrared radiation detectors using bundled carbon nanotubes and methods of constructing the same |
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