CN103553609B - High-quality factor microwave medium ceramic material, preparation method and microwave device - Google Patents

High-quality factor microwave medium ceramic material, preparation method and microwave device Download PDF

Info

Publication number
CN103553609B
CN103553609B CN201310527079.9A CN201310527079A CN103553609B CN 103553609 B CN103553609 B CN 103553609B CN 201310527079 A CN201310527079 A CN 201310527079A CN 103553609 B CN103553609 B CN 103553609B
Authority
CN
China
Prior art keywords
microwave
quality factor
compound
barium
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310527079.9A
Other languages
Chinese (zh)
Other versions
CN103553609A (en
Inventor
雒文博
杨晓战
李在映
刘明龙
江林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing Yuntianhua hanen New Material Development Co Ltd
Yunnan Yuntianhua Co Ltd
Original Assignee
Yunnan Yuntianhua Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yunnan Yuntianhua Co Ltd filed Critical Yunnan Yuntianhua Co Ltd
Priority to CN201310527079.9A priority Critical patent/CN103553609B/en
Publication of CN103553609A publication Critical patent/CN103553609A/en
Application granted granted Critical
Publication of CN103553609B publication Critical patent/CN103553609B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses a kind of high-quality factor microwave medium ceramic material, preparation method and microwave device, material comprises: (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, wherein B is the oxide compound of barium element and antimony element; The present invention adopts (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15oxide compound in conjunction with barium element and antimony element makes microwave dielectric ceramic materials, with existing Ba 5nb 4o 15deng ceramic phase ratio, effectively can improve the final quality factor of material, the needs making material can be applicable to microwave communication industry to expand to high frequency, and frequency resonance temperature factor τ fcan regulate, and quality factor are still stablized after regulating, be beneficial to the design of device, meet the application demand of temperature match curing conditions, be applicable to field of microwave communication and develop to high frequency, be also applicable to alternating temperature Application Areas, and the raw material sources that the present invention relates to are extensive, affordable, technique is simple, and the industrialization being applicable to microwave-medium ceramics device is produced.

Description

High-quality factor microwave medium ceramic material, preparation method and microwave device
Technical field
The present invention relates to the microwave-medium ceramics technical field of the microwave devices such as micro-wave communication dielectric resonator, vibrator, be specifically related to a kind of high-quality factor microwave medium ceramic material, preparation method and application.
Background technology
Microwave-medium ceramics is widely used in the microwave devices such as dielectric resonator, dielectric filter, duplexer, microwave-medium antenna, dielectric resonator oscillator, Medium Wave Guide transmission line.As the critical material in microwave communication, the properties of microwave-medium ceramics determines the performance of overall modern communication technology system to a great extent.
In prior art, Ba 5nb 4o 15the specific inductivity of microwave-medium ceramics is ε r=39, quality factor q × f=23700GHz, temperature coefficient of resonance frequency τ f=78ppm/ DEG C of (S.Kambaetc.HighfrequencydielectricpropertiesofA 5b 4o 15microwaveceramics, JournalofAppliedPhysics, 200189 (7) 3900-3906).In order to reduce Ba 5nb 4o 15the resonance temperature coefficient τ of microwave-medium ceramics f, occurred that employing Ta replaces Nb and regulates Ba 5nb 4o 15resonance temperature coefficient τ fmethod, but the method regulation range is limited, otherwise can affect quality factor.Chinese patent CN200710008980.X adopts Sb part to replace Nb reduction Ba 5nb 4o 15the resonance temperature coefficient τ of microwave-medium ceramics fbut, as resonance temperature coefficient τ fwhen nearly zero, quality factor q × f severe exacerbation.Chinese patent application 201210478550 discloses and adopts BaNb 2o 6resonance temperature coefficient τ fregulate the scheme of nearly zero, but at lower resonance temperature coefficient τ funder condition, quality factor q × f is still undesirable.But based on the importance of this material, the microwave-medium ceramics of exploitation high-quality is whole microwave communication field problem demanding prompt solution.
Therefore, need a kind of microwave dielectric ceramic materials, this material has higher quality factor, and frequency resonance temperature factor τ fcan regulate, and after regulating, quality factor are still stablized, be applicable to field of microwave communication and develop to high frequency, be also applicable to alternating temperature Application Areas.
Summary of the invention
In view of this, the object of this invention is to provide a kind of high-quality factor microwave medium ceramic material, preparation method and microwave device, microwave dielectric ceramic materials has higher quality factor, and frequency resonance temperature factor τ fcan regulate, and after regulating, quality factor are still stablized, be applicable to field of microwave communication and develop to high frequency, be also applicable to alternating temperature Application Areas.
High-quality factor microwave medium ceramic material of the present invention, comprising: (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, wherein B is the oxide compound of barium element and antimony element.
Further, in the oxide compound of described barium element and antimony element, BaO and Sb 2o 5mol ratio be: BaO:Sb 2o 5=0.85-1.15;
Further, in the oxide compound of described barium element and antimony element, BaO and Sb 2o 5mol ratio be: BaO:Sb 2o 5=0.9-1;
Further, 0.07≤x≤0.15;
Further, B is BaSb 2o 6, x=0.1
The invention also discloses a kind of preparation method of high-quality factor microwave medium ceramic material, comprise the following steps:
A. (Ba is prepared 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder:
B. prepare the ceramics powder of B, B is the oxide compound of barium element and antimony element, wherein BaO and Sb 2o 5mol ratio is: BaO:Sb 2o 5=0.85-1.15;
C. by (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, take (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder and B ceramic powder also form mixed powder;
Further, in step a, by (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15stoichiometric ratio take barium compound, strontium compound, niobium compound and antimony compounds and adopt wet ball-milling method mixing and ball milling, within 1 ~ 6 hour, obtain (Ba 900 DEG C ~ 1200 DEG C insulations after drying in an oven 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder;
In step b, take barium compound and antimony compounds by the stoichiometric ratio of B and add in ball grinder and adopt wet ball-milling method mixing and ball milling, after drying in an oven, within 1 ~ 6 hour, obtain B ceramic powder 900 DEG C ~ 1200 DEG C insulations.
Further, described barium compound is barium carbonate or nitrate of baryta, and strontium compound is Strontium carbonate powder or strontium nitrate, and niobium compound is Niobium Pentxoxide or nitric acid niobium, and antimony compounds is antimonous oxide or antimony peroxide.
The invention also discloses a kind of microwave device, make single-dielectric-layer structure by microwave dielectric ceramic materials; Or, the multilayered structure be made up of microwave dielectric ceramic materials and electrode materials.
The invention has the beneficial effects as follows: high-quality factor microwave medium ceramic material of the present invention, adopt (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15oxide compound in conjunction with barium element and antimony element makes microwave dielectric ceramic materials, with existing Ba 5nb 4o 15deng ceramic phase ratio, effectively can improve the final quality factor of material, the needs making material can be applicable to microwave communication industry to expand to high frequency, and frequency resonance temperature factor τ fcan regulate, and quality factor are still stablized after regulating, be beneficial to the design of device, meet the application demand of temperature match curing conditions, be applicable to field of microwave communication and develop to high frequency, be also applicable to alternating temperature Application Areas, and the raw material sources that the present invention relates to are extensive, affordable, technique is simple, and the industrialization being applicable to microwave-medium ceramics device is produced.Embodiment
High-quality factor microwave medium ceramic material of the present invention, comprising: (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, wherein B is the oxide compound of barium element and antimony element.
In the present embodiment, in the oxide compound of described barium element and antimony element, BaO and Sb 2o 5mol ratio be: BaO:Sb 2o 5=0.85-1.15;
In the present embodiment, in the oxide compound of described barium element and antimony element, BaO and Sb 2o 5mol ratio be: BaO:Sb 2o 5=0.9-1.05;
In the present embodiment, 0.07≤x≤0.15;
In the present embodiment, B is BaSb 2o 6, x=0.1
The invention also discloses a kind of preparation method of high-quality factor microwave medium ceramic material, comprise the following steps:
A. (Ba is prepared 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder:
B. prepare the ceramics powder of B, B is the oxide compound of barium element and antimony element, wherein BaO and Sb 2o 5mol ratio is: BaO:Sb 2o 5=0.85-1.15;
C. by (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, take (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder and B ceramic powder also form mixed powder.
In the present embodiment, in step a, by (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15stoichiometric ratio take barium compound, strontium compound, niobium compound and antimony compounds and adopt wet ball-milling method mixing and ball milling, within 1 ~ 6 hour, obtain (Ba 900 DEG C ~ 1200 DEG C insulations after drying in an oven 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder;
In step b, take barium compound and antimony compounds by the stoichiometric ratio of B and add in ball grinder and adopt wet ball-milling method mixing and ball milling, after drying in an oven, within 1 ~ 6 hour, obtain B ceramic powder 900 DEG C ~ 1200 DEG C insulations.
In the present embodiment, described barium compound is barium carbonate or nitrate of baryta, and strontium compound is Strontium carbonate powder or strontium nitrate, and niobium compound is Niobium Pentxoxide or nitric acid niobium, and antimony compounds is antimonous oxide or antimony peroxide.
The invention also discloses a kind of microwave device, make single-dielectric-layer structure by microwave dielectric ceramic materials; Or, the multilayered structure be made up of microwave dielectric ceramic materials and electrode materials;
To add in ball grinder after ball milling 3h after microwave dielectric material of the present invention being added proper amount of acetone, ethanol in proper amount, appropriate triolein, appropriate PVB and appropriate DBP, after defoaming machine de-bubble, curtain coating, cutting, printed wiring, other device embedding, lamination, sintering obtain this microwave device, and this microwave device can be the devices such as microwave base plate, multi-layer capacitor, LC wave filter, temperature compensation wave filter.
Following table is specific embodiments of the invention, and parameter is that final microwave device detects gained:
Microwave dielectric ceramic materials in above-described embodiment adopts following three kinds of technological processs to obtain:
In above-described embodiment, embodiment two, four, six, eight raw material adopts nitrate of baryta, Niobium Pentxoxide, strontium nitrate, antimony peroxide to be raw material, and embodiment one, three, five, seven raw material adopts barium carbonate, Strontium carbonate powder, antimonous oxide, nitric acid niobium;
Preparation technology one
Comprise the following steps:
A. (Ba is prepared 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder:
By (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15stoichiometric ratio take barium compound, strontium compound, niobium compound and antimony compounds and adopt wet ball-milling method mixing and ball milling, within 6 hours, obtain (Ba 900 DEG C of insulations after drying in an oven 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder;
B. prepare the ceramics powder of B, B is the oxide compound of barium element and antimony element, wherein BaO and Sb 2o 5mol ratio presses above-described embodiment, and the oxide compound taking barium element and antimony element by the stoichiometric ratio of B adds in ball grinder and adopts wet ball-milling method mixing and ball milling, within 1 hour, obtains B ceramic powder after drying in an oven 1200 DEG C of insulations;
C. by (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, take (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder and B ceramic powder also form mixed powder.
Preparation technology two
Comprise the following steps:
A. (Ba is prepared 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder:
By (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15stoichiometric ratio take barium compound, strontium compound, niobium compound and antimony compounds and adopt wet ball-milling method mixing and ball milling, within 1 hour, obtain (Ba 1200 DEG C of insulations after drying in an oven 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder;
B. prepare the ceramics powder of B, B is the oxide compound of barium element and antimony element, wherein BaO and Sb 2o 5mol ratio presses above-described embodiment, and the oxide compound taking barium element and antimony element by the stoichiometric ratio of B adds in ball grinder and adopts wet ball-milling method mixing and ball milling, within 6 hours, obtains B ceramic powder after drying in an oven 900 DEG C of insulations;
C. by (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, take (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder and B ceramic powder also form mixed powder.
Preparation technology three
Comprise the following steps:
A. (Ba is prepared 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder:
By (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15stoichiometric ratio take barium compound, strontium compound, niobium compound and antimony compounds and adopt wet ball-milling method mixing and ball milling, within 3 hours, obtain (Ba 1000 DEG C of insulations after drying in an oven 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder; Adopt deionized water as ball-milling medium;
B. prepare the ceramics powder of B, B is the oxide compound of barium element and antimony element, wherein BaO and Sb 2o 5mol ratio presses above-described embodiment, and the oxide compound taking barium element and antimony element by the stoichiometric ratio of B adds in ball grinder and adopts wet ball-milling method mixing and ball milling, within 3 hours, obtains B ceramic powder after drying in an oven 1000 DEG C of insulations; Adopt ethanol as ball-milling medium.
C. by (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, take (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder and B ceramic powder also form mixed powder.
As can be seen from the above table:
Embodiment one shows (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15microwave property is excellent, and quality factor q × f can reach 45600GHz, but frequency resonance frequency-temperature coefficient is poor, is τ f=51ppm/ DEG C, is not suitable for being applied in the environment of alternating temperature.
Embodiment two ~ eight shows that B pottery mixes the frequency resonance frequency-temperature coefficient that significantly can reduce material monolithic, when incorporation is 0.1mol, and the frequency resonance frequency-temperature coefficient of material nearly zero; Particularly when the barium element of B and oxide mol ratio corresponding to antimony element are m baO: m sb2O5=1, namely B is BaSb 2o 6time, over-all properties is optimum, DIELECTRIC CONSTANT ε r=37.5, quality factor q × f can reach 39200GHz, simultaneously temperature coefficient of resonance frequency τ f=1ppm/ DEG C.
According to the parameter comparison of above-described embodiment, it is high that microwave dielectric material of the present invention has quality factor, the advantage that temperature coefficient of resonance frequency is adjustable.Embodiment 5,6 and 8 all obtains good microwave dielectric material, and particularly embodiment 8 over-all properties is best, quality factor q × f=39200GHz, temperature coefficient of resonance frequency τ fnearly zero, other embodiments show slightly not enough compared with embodiment 8, but still meet implementing process of the present invention and requirement.
What finally illustrate is, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from aim and the scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.

Claims (7)

1. a high-quality factor microwave medium ceramic material, is characterized in that: comprising: (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein 0.07≤x≤0.15, wherein B is the oxide compound of barium element and antimony element; In the oxide compound of described barium element and antimony element, BaO and Sb 2o 5mol ratio be: BaO:Sb 2o 5=0.85-1.15.
2. high-quality factor microwave medium ceramic material according to claim 1, is characterized in that: in the oxide compound of described barium element and antimony element, BaO and Sb 2o 5mol ratio be: BaO:Sb 2o 5=0.9-1.05.
3. high-quality factor microwave medium ceramic material according to claim 2, is characterized in that: B is BaSb 2o 6, x=0.1.
4. a preparation method for high-quality factor microwave medium ceramic material, is characterized in that: comprise the following steps:
A. (Ba is prepared 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder:
B. prepare the ceramics powder of B, B is the oxide compound of barium element and antimony element, wherein BaO and Sb 2o 5mol ratio is: BaO:Sb 2o 5=0.85-1.15;
C. by (1-x) (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15-xB, wherein x≤0.3, take (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder and B ceramic powder also form mixed powder.
5. the preparation method of high-quality factor microwave medium ceramic material according to claim 4, is characterized in that: in step a, by (Ba 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15stoichiometric ratio take barium compound, strontium compound, niobium compound and antimony compounds and adopt wet ball-milling method mixing and ball milling, within 1 ~ 6 hour, obtain (Ba 900 DEG C ~ 1200 DEG C insulations after drying in an oven 0.98sr 0.02) 5(Nb 0.95sb 0.05) 4o 15ceramic powder;
In step b, take barium compound and antimony compounds by the stoichiometric ratio of B and add in ball grinder and adopt wet ball-milling method mixing and ball milling, after drying in an oven, within 1 ~ 6 hour, obtain B ceramic powder 900 DEG C ~ 1200 DEG C insulations.
6. the preparation method of high-quality factor microwave medium ceramic material according to claim 5, it is characterized in that: described barium compound is barium carbonate or nitrate of baryta, strontium compound is Strontium carbonate powder or strontium nitrate, niobium compound is Niobium Pentxoxide or nitric acid niobium, and antimony compounds is antimonous oxide or antimony peroxide.
7. a microwave device, is characterized in that: make single-dielectric-layer structure by the microwave dielectric ceramic materials described in the arbitrary claim of claims 1 to 3; Or, the multilayered structure be made up of the microwave dielectric ceramic materials described in the arbitrary claim of claims 1 to 3 and electrode materials.
CN201310527079.9A 2013-10-30 2013-10-30 High-quality factor microwave medium ceramic material, preparation method and microwave device Active CN103553609B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310527079.9A CN103553609B (en) 2013-10-30 2013-10-30 High-quality factor microwave medium ceramic material, preparation method and microwave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310527079.9A CN103553609B (en) 2013-10-30 2013-10-30 High-quality factor microwave medium ceramic material, preparation method and microwave device

Publications (2)

Publication Number Publication Date
CN103553609A CN103553609A (en) 2014-02-05
CN103553609B true CN103553609B (en) 2015-12-02

Family

ID=50008028

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310527079.9A Active CN103553609B (en) 2013-10-30 2013-10-30 High-quality factor microwave medium ceramic material, preparation method and microwave device

Country Status (1)

Country Link
CN (1) CN103553609B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6249004B2 (en) * 2015-10-06 2017-12-20 Tdk株式会社 Dielectric composition and electronic component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102503374A (en) * 2011-09-30 2012-06-20 桂林理工大学 Microwave dielectric ceramic Ba(4-x)SrxLiSb3O12 capable of being sintered at low temperature and preparation method thereof
CN102976751A (en) * 2012-11-22 2013-03-20 云南云天化股份有限公司 Low-temperature sintering microwave dielectric ceramic material and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102503374A (en) * 2011-09-30 2012-06-20 桂林理工大学 Microwave dielectric ceramic Ba(4-x)SrxLiSb3O12 capable of being sintered at low temperature and preparation method thereof
CN102976751A (en) * 2012-11-22 2013-03-20 云南云天化股份有限公司 Low-temperature sintering microwave dielectric ceramic material and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Ba5(Nb1–xSbx)4O15 微波介电陶瓷的低温烧结";张冲 等;《电子元件与材料》;20070831;第26卷(第8期);第55-58页 *

Also Published As

Publication number Publication date
CN103553609A (en) 2014-02-05

Similar Documents

Publication Publication Date Title
CN106927804B (en) A kind of microwave-medium ceramics temperature frequency characteristic adjusting control agent and its LTCC material
CN103482975B (en) High-dielectric-constant X8R type MLCC medium material and preparing method thereof
CN107188557B (en) Microwave dielectric ceramic material and preparation method thereof
CN102249664A (en) Potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN113321496B (en) Composite microwave dielectric ceramic material and preparation method thereof
CN114874010B (en) Microwave ceramic material DyVO 4 And method for preparing the same
CN108358633B (en) Low-temperature sintered Ca5Mn4-xMgxV6O24Microwave dielectric material and preparation method thereof
CN104844204B (en) A kind of high dielectric microwave ceramic medium material, Preparation method and use
CN107244916B (en) Niobate-series low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN103553610B (en) Low-temperature sintered microwave dielectric ceramic material, preparation method and microwave device
CN103553609B (en) High-quality factor microwave medium ceramic material, preparation method and microwave device
CN104310986A (en) High dielectric constant stable-temperature ceramic capacitor dielectric material
CN104387057B (en) A kind of temperature-stable titanio spinelle microwave-medium ceramics and low temperature preparation method thereof
CN107216150B (en) low-temperature co-fired ceramic materials and preparation method thereof
CN105399405A (en) Low dielectric microwave ferroelectric ceramics and preparation method thereof
CN104710175A (en) Low-dielectric-constant lithium magnesium zirconate microwave dielectric ceramic material and preparation method thereof
CN111548158B (en) Ultralow temperature sintering microwave medium composite material Sr1-xCaxV2O6And method for preparing the same
CN103979953A (en) Novel rare earth modified microwave dielectric ceramic and preparation method thereof
CN103146345B (en) Microwave dielectric materials capable of burning with copper electrodes together, preparation method and application thereof
CN109650886B (en) Ba-Mg-Ta LTCC material and preparation method thereof
CN111646796A (en) Low-temperature sintered low-dielectric microwave ceramic material Sr2VxO7And method for preparing the same
CN106518051B (en) A kind of temperature-stabilized microwave medium ceramic material and preparation method thereof
CN104310999A (en) Preparation method of low-temperature sintered X8R type ceramic capacitor medium
CN110395984A (en) A kind of low temperature sintering microwave ceramic material and preparation method thereof
CN102683789B (en) A kind of harmonic oscillator and preparation method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20161019

Address after: 401220 Changshou District of Chongqing economic and Technological Development Zone United Road No. 22

Patentee after: Chongqing Yuntianhua hanen New Material Development Co Ltd

Patentee after: Yutianhua Co., Ltd., Yunnan

Address before: 650228 Dianchi Road, Yunnan, China, No. 1417, No.

Patentee before: Yutianhua Co., Ltd., Yunnan