CN103545442B - Deformation-free block thermoelectric material during a kind of thermo-electric generation - Google Patents
Deformation-free block thermoelectric material during a kind of thermo-electric generation Download PDFInfo
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- CN103545442B CN103545442B CN201310527769.4A CN201310527769A CN103545442B CN 103545442 B CN103545442 B CN 103545442B CN 201310527769 A CN201310527769 A CN 201310527769A CN 103545442 B CN103545442 B CN 103545442B
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Abstract
Deformation-free block thermoelectric material when the present invention is a kind of thermo-electric generation.The chemical composition of this thermoelectric material is Cu
2-xse(0≤x≤0.25) with the mixture of elements A; And this ingredients of a mixture mol ratio meets: (M
cu+ nM
a): M
se=(2+y): 1, wherein M
cufor Cu element molar fraction in the mixture, M
afor element A molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, n is the chemical valence of elements A, 0.05≤y≤0.1.The present invention a kind of guarantees electrothermal module <b> not </b> flexural deformation when room temperature to 1000 DEG C thermo-electric generation, and deformation-free block thermoelectric material when keeping the thermo-electric generation of the highest thermoelectricity performance factor 2≤ZT≤2.5.
Description
Technical field
The present invention is a kind of block thermoelectric material, and particularly one solves Cu
2-xse(0≤x≤0.25) block thermoelectric material of bending or problem on deformation that base electrothermal module occurs during thermo-electric generation in room temperature to 1000 DEG C temperature range, belong to the innovative technology of block thermoelectric material.
Background technology
Thermoelectric material, as the material that heat energy can be directly changed into electric energy, can be used for Waste Heat Reuse, generates electricity after also can converting sunlight to heat again, namely " solar energy-heat energy-electric energy " generation mode (hereinafter referred to as " solar heat volt ").The thermoelectric material that sunlight can to concentrate on compared with small size and volume by cheap reflecting material by solar heat volt produces high-temperature power generation, decreases the consumption of thermoelectric material, reduction cost of electricity-generating.On the other hand, the conversion efficiency of thermoelectric material is determined by following formula:
, ZT is the performance factor of thermoelectric material, ZT=
, σ is conductivity, and S is Seebeck coefficient, and T is absolute working temperature, and k is thermal conductivity.Therefore, the conversion efficiency of thermoelectric material is relevant with ZT, cold warm end temperature difference and residing temperature.Higher, the cold warm end temperature difference of ZT is larger, working temperature is higher, and conversion efficiency is higher.And only have ZT value to exist
2 above, the hot generating equipment that makes of the thermoelectric material of power generation temperature more than 600 DEG C is just likely suitable with cost with the conversion efficiency of current existing steam-driven generator, just can have the possibility that business is applied.Reflecting material optically focused can obtain very large power generation operation temperature, be generally the high temperature section more than 300 DEG C, and working temperature is adjustable.Say that the generating of solar heat volt has the potentiality obtaining high conversion efficiency from the angle of working temperature and green energy resource, more and more receive the concern of energy field.
But at present except the application of military and space, also there is no which kind of thermoelectric material for the generating of business solar heat volt.Trace it to its cause mainly because current body heat electric material is except Cu
2-xse(0≤x≤0.25), LAST system ZT exists
2 above, the ZT value of remaining body material is all below 2.But LAST complicated component, structural instability, the bad control of preparation technology.And Cu
2-xse(0≤x≤0.25) system composition is relatively simple, and structure is relatively stable; But when high temperature (temperature as more than 700 DEG C) works, module hot junction is softening transform all easily.This is electrothermal module generating is abstained from most a bit.Therefore need to solve Cu
2-xse(0≤x≤0.25) problem that base electrothermal module can bend or be out of shape during thermo-electric generation in medium and high temperature temperature range is Cu
2-xse(0≤x≤0.25) system solar heat volt generating technical support is provided.
Summary of the invention
The object of the invention is to consider the problems referred to above and provide a kind of and guarantee electrothermal module when room temperature to 1000 DEG C thermo-electric generation
nodeformation-free block thermoelectric material during diastrophic thermo-electric generation, the present invention keeps the highest thermoelectricity performance factor 2≤ZT≤2.5.
Technical scheme of the present invention is: deformation-free block thermoelectric material during thermo-electric generation of the present invention, and the chemical composition of this thermoelectric material is Cu
2-xse(0≤x≤0.25) with the mixture of elements A; And this ingredients of a mixture mol ratio meets: (M
cu+ nM
a): M
se=(2+y): 1, wherein M
cufor Cu element molar fraction in the mixture, M
afor element A molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, n is the chemical valence of elements A, 0.05≤y≤0.1.
Above-mentioned elements A is: any one in A=Mo, W, C, Al.
The highest thermoelectricity performance factor of above-mentioned block thermoelectric material is 2≤ZT≤2.5.
The present invention is under a kind of prerequisite keeping or improve thermoelectricity capability, solves Cu
2-xse(0≤x≤0.25) base thermoelectricity material block thermoelectric material of module deformation problems during thermo-electric generation in room temperature to 1000 DEG C temperature range.Cu
2-xse(0≤x≤0.25) base thermoelectricity material is that one is adapted at industrial exhaust heat, automobile waste heat, solar energy thermal-power-generating field has one of block thermoelectric material of very big application prospect.Block thermoelectric material of the present invention in room temperature to base electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, and the block thermoelectric material keeping the highest thermoelectricity performance factor 2≤ZT≤2.5.Block thermoelectric material of the present invention solves Cu
2-xse(0≤x≤0.25) base electrothermal module at the key technical problem of room temperature to 1000 DEG C scope thermo-electric generation application, there is very important using value.The present invention is a kind of function admirable, the highest thermoelectricity performance factor 2≤ZT≤2.5, is suitable for the undeformed block thermoelectric material of the thermo-electric generation of thermoelectricity business application.
Embodiment
Deformation-free block thermoelectric material during thermo-electric generation in room temperature to 1000 of the present invention DEG C temperature range, the chemical composition of this thermoelectric material is Cu
2-xse(0≤x≤0.25) with the mixture of elements A; And this ingredients of a mixture mol ratio meets: (M
cu+ nM
a): M
se=(2+y): 1, wherein M
cufor Cu element molar fraction in the mixture, M
afor element A molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, n is the chemical valence of elements A, 0.05≤y≤0.1.The highest thermoelectricity performance factor 2≤ZT≤2.5 of the block thermoelectric material obtained.
Above-mentioned elements A is: any one in A=Mo, W, C, Al.
Specific embodiments of the invention are as follows:
embodiment 1 : block thermoelectric material of the present invention is designed to by original Cu
2the chemical composition of Se base electrothermal module becomes Cu
2the mixture of Se and elements Mo.And this ingredients of a mixture meets: (M
cu+ 6M
mo): M
se=2.05:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
mofor Mo element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 6 is the chemical valence of elements Mo.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 643 DEG C, is 2.1.
embodiment 2 : block thermoelectric material of the present invention is designed to by original Cu
1.99the chemical composition of Se base electrothermal module becomes Cu
1.99the mixture of Se and element W.And this ingredients of a mixture meets: (M
cu+ 6M
w): M
se=2.1:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
wfor W element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 6 is the chemical valence of element W.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 605 DEG C, is 2.05.
embodiment 3 : block thermoelectric material of the present invention is designed to by original Cu
1.75the chemical composition of Se base electrothermal module becomes Cu
1.75the mixture of Se and element W.And this ingredients of a mixture meets: (M
cu+ 4M
c): M
se=2.08:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
cfor C element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 4 is the chemical valence of Elements C.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 678 DEG C, is 2.17.
embodiment 4 : block thermoelectric material of the present invention is designed to by original Cu
1.84the chemical composition of Se base electrothermal module becomes Cu
1.84the mixture of Se and element al.And this ingredients of a mixture meets: (M
cu+ 3M
al): M
se=2.075:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
alfor Al element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 3 is the chemical valence of element al.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 625 DEG C, is 2.25.
embodiment 5 : block thermoelectric material of the present invention is designed to by original Cu
1.91the chemical composition of Se base electrothermal module becomes Cu
1.91the mixture of Se and element W.And this ingredients of a mixture meets: (M
cu+ 6M
mo): M
se=2.06:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
mofor Mo element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 6 is the chemical valence of elements Mo, y=0.06.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 660 DEG C, is 2.0.
embodiment 6 : block thermoelectric material of the present invention is designed to by original Cu
1.88the chemical composition of Se base electrothermal module becomes Cu
1.88the mixture of Se and element W.And this ingredients of a mixture meets: (M
cu+ 6M
w): M
se=2.065:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
wfor W element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 6 is the chemical valence of element W, y=0.065.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 632 DEG C, is 2.16.
embodiment 7 : block thermoelectric material of the present invention is designed to by original Cu
1.80the chemical composition of Se base electrothermal module becomes Cu
1.80the mixture of Se and Elements C.And this ingredients of a mixture meets: (M
cu+ 4M
c): M
se=2.056:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
cfor C element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 4 is the chemical valence of Elements C.Block thermoelectric material of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 730 DEG C, is 2.5.
embodiment 8 : block thermoelectric material of the present invention is designed to by original Cu
1.92the chemical composition of Se base electrothermal module becomes Cu
1.92the mixture of Se and element al.And this ingredients of a mixture meets: (M
cu+ 3M
al): M
se=2.1:1(mol ratio), wherein M
cufor Cu element molar fraction in the mixture, M
alfor Al element molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, 3 is the chemical valence of element al.Body electrothermal module of the present invention in room temperature to electrothermal module during 1000 DEG C of thermo-electric generations
noflexural deformation, the highest ZT, at 680 DEG C, is 2.1.
Claims (2)
1. deformation-free block thermoelectric material during thermo-electric generation, is characterized in that the chemical composition of this block thermoelectric material is Cu
2-xthe mixture of Se and elements A, wherein 0≤x≤0.25; And this ingredients of a mixture mol ratio meets: (M
cu+ nM
a): M
se=(2+y): 1, wherein M
cufor Cu element molar fraction in the mixture, M
afor element A molar fraction in the mixture, M
sefor Se element molar fraction in the mixture, n is the chemical valence of elements A, 0.05≤y≤0.1; Above-mentioned elements A is any one in Mo, W, C, Al.
2. deformation-free block thermoelectric material during thermo-electric generation according to claim 1, is characterized in that the highest thermoelectricity performance factor Z T of above-mentioned block thermoelectric material is 2≤ZT≤2.5.
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| CN201310527769.4A CN103545442B (en) | 2013-10-31 | 2013-10-31 | Deformation-free block thermoelectric material during a kind of thermo-electric generation |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8022397B2 (en) * | 2007-06-08 | 2011-09-20 | Seiko Epson Corporation | Transistor |
| CN102257648A (en) * | 2008-12-19 | 2011-11-23 | 开利公司 | Bulk-processed, enhanced figure-of-merit thermoelectric materials |
| CN103165809A (en) * | 2013-03-19 | 2013-06-19 | 武汉理工大学 | Self-propagating high-temperature rapid one-step synthesis thermoelectric material powder with nanostructure Cu2Se method |
-
2013
- 2013-10-31 CN CN201310527769.4A patent/CN103545442B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8022397B2 (en) * | 2007-06-08 | 2011-09-20 | Seiko Epson Corporation | Transistor |
| CN102257648A (en) * | 2008-12-19 | 2011-11-23 | 开利公司 | Bulk-processed, enhanced figure-of-merit thermoelectric materials |
| CN103165809A (en) * | 2013-03-19 | 2013-06-19 | 武汉理工大学 | Self-propagating high-temperature rapid one-step synthesis thermoelectric material powder with nanostructure Cu2Se method |
Non-Patent Citations (1)
| Title |
|---|
| Thermoelectric properties of Ag-doped Cu2Se and Cu2Te;Sedat Ballikaya等;《Journal of Materials Chemistry A》;20130816;第1卷;全文 * |
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