CN103531209B - Film with modulated crystallite dimension - Google Patents

Abstract

The application discloses the film with modulated crystallite dimension.A kind of equipment and related methods offer magnetic write element can have at least one write-in magnetic pole that scheduled first crystallite dimension is adjusted at a temperature of low-temperature substrate.The magnetic shield with scheduled second crystallite dimension adjusted at a temperature of low-temperature substrate can be formed.

Description

Film with modulated crystallite dimension

Summary of the invention

Multiple embodiments of the disclosure relate generally to the magnetic element for the data record for being able to carry out enhancing.

According to multiple embodiments, magnetic write element can have is adjusted to scheduled first crystalline substance at a temperature of low-temperature substrate At least one write-in magnetic pole of particle size.It can be formed with scheduled second crystallite dimension being adjusted at a temperature of low-temperature substrate Magnetic shield.

Detailed description of the invention

Fig. 1 is that the block diagram of an Examples section of data storage device indicates.

Fig. 2 substantially illustrates the example magnetic element in the part for the data storage device that can be used for showing in Fig. 1 Cross-sectional view.

Fig. 3 shows that an example block diagram of an example magnetic write element indicates.

Fig. 4 shows the cross-section structure of a part of an example magnetic element.

Fig. 5 draw generally be relevant to according to constructed by multiple embodiments and operate magnetic element performance data.

Fig. 6 diagram is dependent on a variety of operating characteristics of the magnetic element constructed by multiple embodiments and operated.

Fig. 7 provides the flow chart for the magnetic element manufacture routine that multiple embodiments according to the present invention are carried out.

Specific embodiment

Advance with industry to the data storage device with more high data capacity, transmission rate and reliability, product Design focuses on the size for reducing data bit while increasing the data access rate from data storage medium.With accurate timing window Mouthful combine these small operating environments can emphasis added a variety of reading data and write element magnetic property.For example, working as data bit There are when remaining magnetic flux after programming, in fact it could happen that wipes (EAW) situation after writing, misses because not powering on magnetic writer transmitting Wipe the magnetic flux of data bit.

Simplified operating environment can further correspond to use high annealing to multiple magnetospheres of data sensing element, Abnormal grain growth can be generated in underlying shield layer and deteriorate the soft magnetic property of magnetic shielding materials.Therefore, for having The magnetic shield of the data writing component of controlled EAW and the thermal stability relative to annealing with enhancing, which exists, constantly to be increased Long industry requirement.

Therefore, magnetic write element may be configured with is adjusted to scheduled first crystallite dimension at a temperature of low-temperature substrate At least one write-in magnetic pole.By control underlayer temperature adjustment write-in magnetic pole crystallite dimension ability allow construction show with Simplify the write element for the performance that form factor data storage device matches, such as the low easy magnetizing axis coercive of about 8 oersteds Power, less than the hard axis coercivity of 1 oersted, and the uniaxial anisotropy of about 23 oersteds.In addition, by making to be written Pole configuration has scheduled crystallite dimension, and EAW can be improved by the faster magnetization relaxation at write-in pole tip.

The magnetic property of write-in pole material can be improved according to the construction of the magnetic element of multiple embodiments to reduce EAW simultaneously Increase the thermal stability of shielding material.Deposition film allows adaptation to sputtering technology on the substrate for being cooled to low temperature (such as 50K), It is significantly reduced in the mobility of wherein deposition and atomic.This adaptation can inhibit surface and body spreads and prevents little crystal grain from coalescing with shape At biggish crystal grain.Combined with high sputter rate, by it is transportable in deposition and atomic and bury before helping grain growth it is heavy Product atom can further suppress the diffusion into the surface of deposition and atomic.As a result, being characterized by the little crystal grain of microcrystallite crystal grain can have The soft magnetic property for helping the surface/interference roughness reduced between layer and improving thin magnetic film.Little crystal grain and fast deposition can also More grain boundaries and imperfection are introduced, these can prevent grain growth and improve the film in high-temperature annealing process Thermal stability.

Although EAW situation may betide in a variety of data storage environments, Fig. 1 is generally illustrated in data storage device Sample data conversion portion 100.Conversion portion 100 is shown in the environment that can advantageously practice multiple embodiments of the invention. It is to be understood, however, that multiple embodiments of the disclosure are not limited by this environment, and can realize to reduce a variety of accidentally magnetic Flux generates situation.

Conversion portion 100 has actuating member 102, and conversion head 104 is placed in and is present on magnetic-based storage media 108 On programming data position 106.Storage medium 108 is attached to spindle motor 110, and spindle motor 110 is rotated during use to produce Raw air bearing surface (ABS) 112, the sliding block cent 114 of actuating member 102 fly on air bearing surface (ABS) 112 with Head universal joint part (HGA) 116 (it includes conversion head 104) is placed on the desired part of medium 108.

Conversion head 104 may include one or more conversion elements, such as be respectively used to program and read to be situated between from storage The magnetic writer and magnetic response reader of the data of matter 108.In this fashion, the controlled movement of actuating member 102 is led Converter is caused to be aligned with the data track (not shown) limited on storage medium surface to be written, read and rewrite data.

Fig. 2 shows that the cross section block diagram of the embodiment of conversion head 120 indicates that conversion head 120 can be used for the cause in Fig. 1 Dynamic component.The head 120 can have one or more magnetic elements, such as magnetic reader 122 and writer 124, they can be single Solely operation, or operate simultaneously, data are written or from this adjacent to storage to neighbouring storage medium (medium 108 of example as shown in figure 1) Media retrieval data.Each magnetic element 122 and 124 is made of a variety of shieldings, these shieldings are for limiting corresponding data medium Tentation data magnetic track 126, the data bit on tentation data magnetic track 126 senses and compiled by corresponding magnetic element 122 and 124 Journey.

As shown, magnetic reading element 122 has the magnetic resistance being arranged between bottom end shielding 132 and top shielding 134 Layer 130.Meanwhile write element 124 have write-in magnetic pole 136 and at least one return magnetic pole 138, create write circuit with It gives and closes on the desired magnetic direction of storage medium.Not limited to this, some embodiments are vertically written using write element 124 Data are to place near the steps proximity data medium.This vertical recording technology can permit the data bit of more dense compression, but can also increase The influence of EAW, because remanence flux can influence multiple data bit simultaneously.

In an another non-limiting embodiment, write element 124 may include at least two return magnetic poles 138, return Magnetic pole 138 is placed as contiguously neighbouring with nonmagnetic spacer layer 140 and air bearing surface (ABS) shielding 142.Write element 124 can further comprise coil 144 and yoke 146, and coil 144 can be one or more independent lines, and yoke 146 is attached to write-in magnetic Pole 136 is simultaneously operated with coil 144 to give from write-in magnetic pole 136 and be advanced through the magnetic that conductive path 148 reaches return magnetic pole 138 Flux.It should be noted that the movement depending on head, many aspects of head 120 may be characterized as the upper magnetic track or lower track along Y-axis.

The block diagram that Fig. 3 illustrates the data write-in part 160 of data storage device indicates, usually illustrates write-in and returns Return the interaction that magnetic pole 162 and 164 passes through data storage medium 166.In operation, it can be positioned relative to data storage medium 166 Part 160 is written to allow magnetic path 168 to return to magnetic pole 164 by the flow direction of medium 166 from write-in magnetic pole 162 in data, or anti- ?.Write-in magnetic pole 162 can be configured to pole tip 170, and pole tip 170 corresponds to magnet pole widths from ontology distance 172 are decreased to the distance between two tips 174 at ABS.So shaped pole tip 170 can concentrated magnetic flux amount transmitting and medium The size of magnetic path 168 on 166.It is very similar to the tapered width tip 170 of write-in magnetic pole 162, returning to magnetic pole 164 can Configured with variable-width, or uniform return width 176, as shown in the figure.

No matter how write-in magnetic pole 162 and return magnetic pole 164 configure, tunable integers are according to write-in part 160 so that magnetic road Multiple layers of 168 bonding data storage medium 166 of diameter.Multiple layers of quantity, type and the configuration of data storage medium 166 are not Restricted, Fig. 3 shows the soft magnetic underlayer 178 being stacked below first and second interlayer 180 and 182 and a recording layer 184. The layer that shows in Fig. 3 configures the perpendicular recording for allowing data bit because magnetic path 168 complete from write-in magnetic pole 162 across ABS is by soft magnetic underlayer 178 to the circuit for returning to magnetic pole 164, and vice versa.

Multiple layers of the speed and accuracy of write-in and return magnetic pole 162 and 164 bonding data storage mediums 166 can correspond to In the maximum data bit density of medium 166.With in modern data storage equipment, data bit is pushed to smaller szie and is situated between The speed that matter 166 rotates is getting faster, and is written and is returned magnetic pole 162 and 164 and change magnetized ability as close to higher face position The choke point of degree.Therefore, adjustment write-in and return magnetic pole 162 and 164 to predetermined crystallite dimension allow to be easier to change magnetization And increase writing speed.

Fig. 4 is provided according to the write-in of multiple embodiments adjusted during construction or the part of reading element 190.Write-in or Reading element 190 can be configured to the layer with arbitrary number amount and type and be constructed with a variety of non-limited ways, such as splash It penetrates and is vapor-deposited.In the embodiment shown in fig. 4, substrate 192 provides substrate, and bottom magnetic shielding is formed on the substrate 194, magnetic active structure 196 and top magnetic shield 198.Active magnetic structure 196 can be magnetic resistance in various embodiments Formula reader stack or write-in magnetic pole.

Due to there is a greater amount of data tracks on data storage medium, write-in magnetic pole 196 is formed as having magnetic field High osmosis and the ability with the reduction width with soft magnetic property, allow in the data equipment that surface density increasingly increases Precise information write-in.Further, the energy of width and magnetic properties is adjusted by the crystallite dimension of control write-in magnetic pole 196 Power, which allows to be written magnetic pole 196, becomes the solid components for not being layered or undoping into nuclear structure, simplifies and manufactures and provide more More precision architectures.

It in various embodiments, will be under active magnetic structure 196 by controlling the temperature of substrate 192 during deposition Bottom end shielded layer 194 is adjusted to scheduled crystallite dimension.That is, when substrate 192 maintains the first temperature (such as 50K) When, can deposited magnetic shielding 194, and when substrate maintains second temperature (such as 50K), subsequent position activity magnetic structure. This underlayer temperature manipulation provides control crystallite dimension and influences the magnetism that magnetic resistance reads stack, write-in magnetic pole and shielding material Ability.

In addition, in some embodiments, the manipulation of underlayer temperature, which can be used to form, is written multiple data or reads member The various grain sizes that 190 layers of part.For example, magnetic shield 194 and 198 and magnetic active structure 196 can have respectively it is different Crystallite dimension, at least partially due to depositing when substrate 192 maintains different cryogenic temperatures, these cryogenic temperatures are low for this In room temperature.But when substrate 192 is maintained at a below room temperature, it is not necessary to deposit all layers of data element 190.Namely It says, underlayer temperature is alterable, and is at or greater than room temperature and then cryogenic temperature for other layers for some layers.It answers Notice that 190 layers of multiple data elements are not limited to size and direction shown in Fig. 4, and each layer can be by unique or normal See that material is constituted, such as, but not limited to, for magnetic shield 194 and 198 NiFe and the magnetic activity knot for magnetic pole is written Structure 196 uses FeCo.

The application of low-temperature substrate temperature can correspond to reduced crystallite dimension and extremely in 190 manufacturing process of data element Few soft magnetic property for magnetic active structure 196, by from low-temperature substrate temperature to the multiple data elements 190 of annealing at room temperature Layer.Will recognize that magnetic active structure 196 is warmed to room temperature can be in the application of movement or heating element without data element 190 In the case of simple and effective crystallization is provided.But some embodiments allow data element 190 to be warmed to room temperature naturally, then exist Further annealing is provided when temperature is promoted to higher than room temperature, the scheduled crystallite dimension of magnetic shield can be in no abnormal grain The temperature is born in the case where growth.

In various embodiments, it is small up to about 2 to be manually annealed to about 400C for low temperature depositing bottom end magnetic shield 194 When, it can produce the easy magnetizing axis coercivity of about 1.0 oersteds and the hard axis coercivity of about 0.12 oersted.Phase Than under, plating shield, such as NiFe, it will be annealed within 2 hours by 400C to generate the easy magnetizing axis coercivity of 2.7 oersteds And 0.38 oersted hard axis coercivity.

It can be appreciated that crystallite dimension is associated with the degree of roughness on surface.Adjustment crystallite dimension can produce various different Predetermined surface degree of roughness, can corresponding to softer magnetic property, under high annealing temperature grain growth it is more resistance.

Figures 5 and 6 are respectively shown may magnetic characteristic by the example for adjusting write-in magnetic pole at a temperature of low-temperature substrate.In Fig. 5 In, FeCo film is deposited on the substrate for maintaining about 50K, can produce the crystal grain with offer hysteresis loop as shown in the figure The 2.4T solid film of size.Particularly, segmentation loop line 210 illustrates the hard axis coercivity for being lower than 1 oersted, and solid loop line 212 illustrate the easy magnetizing axis coercivity lower than 8 oersteds.This magnetic property supports adjustment to have the write-in compared with little crystallite size Magnetic pole simultaneously do not lose film magnetic moment (with when by it is material doped to write-in magnetic pole in reduce crystallite dimension when occur magnetic moment funeral Mistake is opposite) ability.

Hysteresis loop corresponding with thin film magnetic shielding composition is also supported by reducing crystal grain at a temperature of low-temperature substrate Size generate have high osmosis, low coercive field and although high annealing and be still the magnetic shield of low magnetic leakage energy Power.

The easy magnetizing axis coercivity (line 220) and the collet with substrate that Fig. 6 illustrates example FeCo write-in pole material The correlation of the crystallite dimension (line 222) of temperature (chuck temperature).It can be appreciated that the drop of collet temperature It is low correspond to reduceds crystallite dimension and reduced coercivity, explaination by a temperature of low-temperature substrate (such as 50K) deposit And the soft magnetic property and little crystallite size provided.In some embodiments, write-in magnetic pole and return magnetic pole are adjusted to different Predetermined crystallite dimension, which show pass through the modified different magnetic property according to the underlayer temperature of the line 220 and 222 in Fig. 6 And crystallite dimension.

Although for constituting there is the write element of modulated write-in magnetic pole not require or limit ad hoc fashion, Fig. 7 is provided Routine 230 is manufactured according to the example write element that multiple embodiments are implemented.The 230 initial evaluation magnetic of routine in decision 232 Property shield configuration, can determine the thickness, material and crystallite dimension of shielding.Solidify with magnetic shield is designed, step 234 Substrate is adjusted to temperature corresponding with the crystallite dimension and magnetic property that determine in decision 232.

Decision 236 is then for the crystallite dimension and magnetic property at pole tip (such as pole tip 170 in Fig. 3) Specific consideration and design write-in magnetic pole.The determination of crystallite dimension and magnetic property can be for example associated with via the operation diagram of Fig. 6 Underlayer temperature, which is then converted into reality in the step 238 of write-in magnetic pole deposition.When decision 240 evaluates extra play Underlayer temperature can be maintained or changed when being whether deposited on write-in magnetic pole.If having selected extra play, adjusted in step Substrate most at least one extra play provides one or more temperature of designed crystallite dimension and magnetic characteristic.

By the operation controlled, routine 230 can manufacture the write element with any number of layers, these layers are together with write-in Magnetic pole can either individually or collectively be adjusted to predetermined crystallite dimension and magnetic property to cryogenic temperature by setting substrate.But Routine 230 is not limited to process shown in Fig. 7, because multiple decisions and step can be omitted, change and add.Example Such as, decision 232,236 and 240 can jointly carry out before depositing any write element layer.In another example embodiment, Write-in magnetic pole is deposited over the modulated substrate with seed material (such as Ru and Ta), rather than be arranged in write-in magnetic pole and Magnetic shield between substrate.

It can be appreciated that the configuration of the magnetic element of disclosure description and material properties allow to have reduced crystalline substance by providing Grain ruler in and soft magnetic property write-in magnetic pole and enhance magnetic programming, can correspond to write-in high areal density data storage device Erasing is reduced later.In addition, adjustment and optimization data writing component multiple layers of ability allow in data storage medium into The accurate matching of the magnetic operator of row data address period.In addition, although all embodiments are related to magnetic programming, but it will be appreciated that Technology claimed is easily used in any number of other application, such as data sensing and solid state data storage application.

It is understood that even if many characteristics and advantage of multiple embodiments of the disclosure are illustrated in the foregoing written description, knot The details of the structure and function of multiple embodiments is closed, these datail descriptions are used only as illustrating, and can make improvement in detail, The especially original of the disclosure of the maximum magnitude indicated by the wide in range general sense for the term stated as the appended claims Modular construction and arrangement aspect in reason is for example, particular element can be dependent on the spy for not departing from the spirit and scope of the technology of the present invention It applies and changes calmly.

Claims (17)

1. a kind of data storage device, the write-in magnetic pole including contacting magnetic shield, the magnetic shield is in the first low-temperature substrate At a temperature of be adjusted to the first predetermined crystallite dimension, and said write magnetic pole quilt at a temperature of the second low-temperature substrate of 50 Kelvins It is adjusted to the second predetermined crystallite dimension.

2. data storage device as described in claim 1, wherein said write magnetic pole is single pantostrat.

3. data storage device as described in claim 1, wherein said write magnetic pole is FeCo.

4. data storage device as described in claim 1, wherein the second predetermined crystallite dimension corresponds to 2.4 teslas FeCo material.

5. data storage device as described in claim 1, wherein the underlayer temperature is to deposition said write magnetic pole thereon Substrate layer and be maintained.

6. data storage device as claimed in claim 5, wherein the substrate layer includes Ru.

7. data storage device as described in claim 1 is write wherein the second predetermined crystallite dimension is corresponded to for described Enter the easy magnetizing axis coercivity of magnetic pole 8Oe.

8. data storage device as described in claim 1 is write wherein the second predetermined crystallite dimension is corresponded to for described Enter the hard axis coercivity that magnetic pole is less than 1Oe.

9. data storage device as described in claim 1 is write wherein the second predetermined crystallite dimension is corresponded to for described Enter the uniaxial anisotropy of magnetic pole 23Oe.

10. a kind of magnetic write element, the write-in magnetic pole including closing on magnetic shield, said write magnetic pole in 50 Kelvins It is formed at a temperature of one low-temperature substrate to provide the first predetermined crystallite dimension, magnetic shield shape at a temperature of the second low-temperature substrate At to provide the second predetermined crystallite dimension, the magnetic shield is arranged between substrate and said write magnetic pole, first He Second predetermined crystallite dimension is different.

11. magnetic write element as claimed in claim 10, wherein the magnetic shield is compared to said write magnetic pole by not It is formed with material.

12. magnetic write element as claimed in claim 10, wherein the magnetic shield and write-in magnetic pole are individually formed.

13. magnetic write element as claimed in claim 10, wherein the magnetic shield includes NiFe.

14. a kind of method for being used to form the magnetic writing head for data storage device, comprising:

Substrate is set to reach the first low-temperature substrate temperature；

Deposited magnetic shields over the substrate, and the magnetic shield has and the first low-temperature substrate temperature corresponding first Predetermined crystallite dimension；

Adjust the second low-temperature substrate temperature of substrate to 50 Kelvins；And

Deposition write-in magnetic pole, said write magnetic pole have corresponding to the second low-temperature substrate temperature in the magnetic shield Second predetermined crystallite dimension.

15. method as claimed in claim 14, wherein the magnetic shield is heated to room temperature and then in 400 DEG C of annealing 2 Hour.

16. method as claimed in claim 14 sputters at the lining including the use of high-speed wherein depositing the magnetic shield Deposition has the magnetic shield of the described first predetermined crystallite dimension on bottom, with the atom of the sputtered magnetic shielding materials of reduction Mobility.

17. method as claimed in claim 14 further comprises deposited seed layer.