CN103521463B - A kind of solar silicon wafers separation system and method based on luminescence generated by light - Google Patents
A kind of solar silicon wafers separation system and method based on luminescence generated by light Download PDFInfo
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- CN103521463B CN103521463B CN201310520548.4A CN201310520548A CN103521463B CN 103521463 B CN103521463 B CN 103521463B CN 201310520548 A CN201310520548 A CN 201310520548A CN 103521463 B CN103521463 B CN 103521463B
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Abstract
The present invention discloses a kind of solar silicon wafers separation system and method based on luminescence generated by light, and this system comprises laser beam emitting device, data acquisition unit and host computer. Described laser beam emitting device and host computer are electrically connected, for the surface irradiation laser to treating sorting silicon chip. Described data acquisition unit and host computer are electrically connected, for gathering the fluorescence signal for the treatment of sorting silicon chip feedback. Described host computer is used for fluorescence signal analysis, obtain dislocation density information and the impurity content information for the treatment of sorting silicon chip, determine the grade of silicon chip, and according to the variation of the dislocation density of silicon chip in polycrystalline silicon ingot casting and impurity content, analyze the deficiency in polycrystalline cast ingot process. The present invention is the silicon chip of sorting different performance effectively, remove the poor efficiency silicon chip of high dislocation density or high impurity content, thereby avoid battery to affect the conversion efficiency of whole battery because of poor efficiency silicon chip, simultaneously, can analyze the undesirable condition occurring in polycrystalline cast ingot process, polycrystalline cast ingot is carried out to process optimization.
Description
Technical field
The present invention relates to polysilicon detection technique field, relate in particular to a kind of solar power silicon based on luminescence generated by lightSheet separation system and method.
Background technology
All the time, people fail to obtain too large breakthrough to polysilicon detection technique, in silicon chip production processCan not carry out sorting, grading to silicon chip, not know whether efficient or poor efficiency of silicon chip. The sun of silicon wafer to manufactureThe potential conversion efficiency of battery and the quality of silicon chip are closely bound up, silicon chip before producing only by existing outward appearance andThe performance tests such as minority carrier life time can not accurately reflect the Potential performance of this silicon chip, by this silicon wafer to manufactureThe unit for electrical property parameters of solar cell, thus there is poor efficiency silicon chip film source and the battery electrical property unfavorable condition that causes.
Summary of the invention
The object of the invention is to by a kind of solar silicon wafers separation system and method based on luminescence generated by light,Solve the problem that above background technology part is mentioned.
For reaching this object, the present invention by the following technical solutions:
A solar silicon wafers separation system based on luminescence generated by light, it comprises laser beam emitting device, data acquisitionAcquisition means and host computer;
Described laser beam emitting device and host computer are electrically connected, for the instruction of exporting according to host computer, to treatingThe surface irradiation laser of sorting silicon chip;
Described data acquisition unit and host computer are electrically connected, and described in gathering, treat the glimmering of sorting silicon chip feedbackOptical signal, exports to host computer;
Described host computer and laser beam emitting device, data acquisition unit are electrically connected, for described fluorescence is believedNumber analyze, described in obtaining, treat dislocation density information and the impurity content information of sorting silicon chip, according to defaultGrade classification rule, determines the grade that this treats sorting silicon chip, and close according to the dislocation of silicon chip in polycrystalline silicon ingot castingThe variation of degree and impurity content, analyzes the deficiency in polycrystalline cast ingot process.
Especially, described laser beam emitting device is selected laser instrument.
Especially, described data acquisition unit is selected camera.
Especially, described host computer is selected computer.
The invention also discloses a kind of solar silicon wafers method for separating based on luminescence generated by light, comprise the steps:
A, the instruction of exporting according to host computer, laser beam emitting device is to treating that sorting silicon chip surface irradiates laser;
Described in B, data acquisition unit collection, treat the fluorescence signal of sorting silicon chip feedback, export to host computer;
C, host computer are analyzed described fluorescence signal, treat the dislocation density information of sorting silicon chip described in obtainingWith impurity content information, according to predetermined level division rule, determine the grade that this treats sorting silicon chip, and according toThe dislocation density of silicon chip and the variation of impurity content in polycrystalline silicon ingot casting, analyze the deficiency in polycrystalline cast ingot process.
Especially, described step C specifically comprises: host computer is analyzed described fluorescence signal, obtains instituteState dislocation density information and the impurity content information for the treatment of sorting silicon chip, according to predetermined level division rule, determineThis treats that sorting silicon chip is excellent silicon chip, normal silicon chip or abnormal silicon chip, and control inspection sheet machine is sent into correspondingInspection film magazine, and according to the variation of the dislocation density of silicon chip in polycrystalline silicon ingot casting and impurity content, analyze polycrystalline castingDeficiency in ingot process.
Especially, described laser beam emitting device is selected laser instrument; Described data acquisition unit is selected camera;Described host computer is selected computer.
Solar silicon wafers separation system and method tool based on luminescence generated by light provided by the invention has the following advantages:One, can pick out the silicon chip of high dislocation density or high impurity content by luminescence generated by light (PL) sorting, fromAnd avoid solar cell to affect the conversion efficiency of integral battery door because of poor efficiency district. Meanwhile, can be traditional senseQualified in segment out the efficient silicon chip of certain accounting, thereby obtain extra returns. Two, by photicLight is analyzed the undesirable condition occurring in polycrystalline cast ingot process, can carry out process optimization to polycrystalline cast ingot. Three, realShow monitoring and tracking from silicon ingot to silicon chip Potential performance, significantly improved the yield of final products, improvedCasting ingot process, thereby improved comprehensive properties of product.
Brief description of the drawings
The solar silicon wafers separation system block diagram based on luminescence generated by light that Fig. 1 provides for the embodiment of the present invention;
The solar silicon wafers method for separating flow chart based on luminescence generated by light that Fig. 2 provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with drawings and Examples, the invention will be further described. Be understandable that, retouch in this placeThe specific embodiment of stating is only for explaining the present invention, but not limitation of the invention. Also need in addition explanation, for convenience of description, in accompanying drawing, only show part related to the present invention but not full content.
Please refer to shown in Fig. 1 the solar silicon wafers based on luminescence generated by light that Fig. 1 provides for the embodiment of the present inventionSeparation system block diagram.
Solar silicon wafers separation system based on luminescence generated by light in the present embodiment specifically comprises laser beam emitting device101, data acquisition unit 102 and host computer 103.
Described laser beam emitting device 101 is electrically connected with host computer 103, for exporting according to host computer 103Instruction, to the surface irradiation laser for the treatment of sorting silicon chip. In the present embodiment, described laser beam emitting device 101Select laser instrument. Superlaser Continuous irradiation, on the surface of silicon chip, is given and a kind of upper state light beam of silicon chip,Silicon chip top layer Electron absorption photon can transit to excitation state, because the electronics of high level is unstable, can fall after riseTo low-lying level, the energy of simultaneous energy level difference emits with the form of light radiation.
Described data acquisition unit 102 is electrically connected with host computer 103, described in gathering, treats sorting silicon chipThe fluorescence signal of feedback, exports to host computer 103. In the present embodiment, described data acquisition unit 102 is selectedCamera, treats the fluorescence signal that sorting silicon chip surface feeds back described in this camera can catch in real time.
Described host computer 103 is electrically connected with laser beam emitting device 101, data acquisition unit 102, for rightDescribed fluorescence signal is analyzed, and treats dislocation density information and the impurity content information of sorting silicon chip described in obtaining,According to predetermined level division rule, determine the grade that this treats sorting silicon chip, and according to silicon chip in polycrystalline silicon ingot castingDislocation density and the variation of impurity content, analyze the deficiency in polycrystalline cast ingot process.
In the present embodiment, described host computer 103 is selected computer. Described predetermined level division rule specifically wrapsDraw together: what one, meet following condition is excellent silicon chip: dislocation grade is at 0-800, and impurity levels is at 0-1200.If treat, sorting silicon chip is defined as excellent silicon chip, examines sheet machine and is sent into 1# inspection film magazine. Two, meet following barPart be the normal silicon chip that waits: dislocation grade is at 800-2000, and impurity levels is at 1200-2500. If treat sortingSilicon chip is defined as normal silicon chip, examines sheet machine and is sent into 2# inspection film magazine. Three, meet following condition for differentThe normal silicon chip that waits: dislocation grade is greater than 2000, and impurity levels is greater than 2500. If treat, sorting silicon chip is defined as extremelySilicon chip, examines sheet machine and is sent into 3# inspection film magazine. Luminescence generated by light (PL) test result and battery efficiency haveMatching, dislocation density and impurity content directly affect conversion efficiency of solar cell; Defect is more, batteryConversion efficiency lower, defect is fewer, the conversion efficiency of battery is higher.
Silicon chip is sorted, according to the variation of the dislocation density of silicon chip in polycrystalline silicon ingot casting and impurity content,Analyze the deficiency in polycrystalline cast ingot process, thereby execution process optimization reduces the generation of defect. Wherein, positionWrong source: one, supersaturation room changes into dislocation; Two, due to thermograde, concentration gradient, machineryThe impacts such as vibrations, cause between the crystal deflection of growing or bending and adjacent crystal block and have dislocation poor, theyBetween form dislocation; Three, crystallization is impurity segregation or solute segregation etc. The source of impurity: one, ingot castingIn heat treatment process, impurity has very strong segregation and precipitation at crystal boundary, becomes the strong of minority carrierComplex centre, in the life-span of reducing minority carrier, reduces polycrystalline battery efficiency; Two, in ingot casting process, assortedThe introducing of prime element, sidewall of crucible and coating composition thereof are to silicon material diffusion etc. Silicon chip sequence: along with the life of crystalLong, the reunion of dislocation density is increasing; Reduce gradually in impurity content region.
As shown in Figure 2, the solar silicon wafers sorting based on luminescence generated by light that Fig. 2 provides for the embodiment of the present inventionMethod flow diagram.
Solar silicon wafers method for separating based on luminescence generated by light in the present embodiment comprises the steps:
Step S201, the instruction of exporting according to host computer, laser beam emitting device is to treating that sorting silicon chip surface irradiatesLaser. In the present embodiment, laser beam emitting device is selected laser instrument. Host computer output order, controls Laser emissionThe open and close of device.
Described in step S202, data acquisition unit collection, treat the fluorescence signal of sorting silicon chip feedback, export toPosition machine. In the present embodiment, data acquisition unit is selected camera, treats point described in this camera can catch in real timeSelect the fluorescence signal of silicon chip surface feedback.
Step S203, host computer are analyzed described fluorescence signal, treat the dislocation of sorting silicon chip described in obtainingDensity information and impurity content information, according to predetermined level division rule, determine the grade that this treats sorting silicon chip,And according to the variation of the dislocation density of silicon chip in polycrystalline silicon ingot casting and impurity content, analyze in polycrystalline cast ingot processDeficiency. In the present embodiment, host computer is selected computer. Described predetermined level division rule specifically comprises: one,What meet following condition is excellent silicon chip: dislocation grade is at 0-800, and impurity levels is at 0-1200. If treat pointSelect silicon chip to be defined as excellent silicon chip, examine sheet machine and sent into 1# inspection film magazine. Two, meet following condition beThe normal silicon chip that waits: dislocation grade is at 800-2000, and impurity levels is at 1200-2500. If treat, sorting silicon chip is trueBe decided to be normal silicon chip, examine sheet machine and sent into 2# inspection film magazine. What three, meet following condition is the silicon such as abnormalSheet: dislocation grade is greater than 2000, and impurity levels is greater than 2500. If treat, sorting silicon chip is defined as abnormal silicon chip,Examine sheet machine and sent into 3# inspection film magazine.
Technical scheme of the present invention, by the effectively silicon chip of sorting different performance of luminescence generated by light, is removed high-orderThe poor efficiency silicon chip of dislocation density or high impurity content, thus avoid battery to affect whole battery because of poor efficiency silicon sheet materialConversion efficiency, meanwhile, can analyze the undesirable condition occurring in polycrystalline cast ingot process by luminescence generated by light,Polycrystalline cast ingot is carried out to process optimization.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for this area skillArt personnel, the present invention can have various changes and variation. All within spirit of the present invention and principle instituteDo any amendment, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (2)
1. the solar silicon wafers separation system based on luminescence generated by light, is characterized in that, comprises that laser sends outInjection device, data acquisition unit and host computer;
Described laser beam emitting device and host computer are electrically connected, for the instruction of exporting according to host computer, to treatingThe surface irradiation laser of sorting silicon chip; Wherein, described laser beam emitting device is selected laser instrument;
Described data acquisition unit and host computer are electrically connected, and described in gathering, treat the glimmering of sorting silicon chip feedbackOptical signal, exports to host computer; Wherein, described data acquisition unit is selected camera;
Described host computer and laser beam emitting device, data acquisition unit are electrically connected, for described fluorescence is believedNumber analyze, described in obtaining, treat dislocation density information and the impurity content information of sorting silicon chip, according to defaultGrade classification rule, determines the grade that this treats sorting silicon chip, and close according to the dislocation of silicon chip in polycrystalline silicon ingot castingThe variation of degree and impurity content, analyzes the deficiency in polycrystalline cast ingot process; Described predetermined level division rule toolBody comprises: what one, meet following condition is excellent silicon chip: dislocation grade is at 0-800, and impurity levels exists0-1200; If treat, sorting silicon chip is defined as excellent silicon chip, examines sheet machine and is sent into 1# inspection film magazine; Two, fullThe following condition of foot be normal silicon chip such as grade: dislocation grade is at 800-2000, and impurity levels is at 1200-2500;If treat, sorting silicon chip is defined as normal silicon chip, examines sheet machine and is sent into 2# inspection film magazine; Three, meet following barPart be the abnormal silicon chip that waits: dislocation grade is greater than 2000, and impurity levels is greater than 2500; If treat, sorting silicon chip is trueBe decided to be abnormal silicon chip, examine sheet machine and sent into 3# inspection film magazine; Wherein, described host computer is selected computer.
2. the solar silicon wafers method for separating based on luminescence generated by light, is characterized in that, comprises following stepRapid:
A, the instruction of exporting according to host computer, laser beam emitting device is to treating that sorting silicon chip surface irradiates laser;
Described in B, data acquisition unit collection, treat the fluorescence signal of sorting silicon chip feedback, export to host computer;
C, host computer are analyzed described fluorescence signal, treat the dislocation density letter of sorting silicon chip described in obtainingBreath and impurity content information, according to predetermined level division rule, determine this treat sorting silicon chip be excellent silicon chip,Normal silicon chip or abnormal silicon chip, control inspection sheet machine and sent into corresponding inspection film magazine, and according to polycrystalline silicon ingot castingThe dislocation density of middle silicon chip and the variation of impurity content, analyze the deficiency in polycrystalline cast ingot process; Described defaultGrade classification rule specifically comprises: what one, meet following condition is excellent silicon chip: dislocation grade exists0-800, impurity levels is at 0-1200; If treat, sorting silicon chip is defined as excellent silicon chip, examines sheet machine and is sentEnter 1# inspection film magazine; What two, meet following condition is the silicon chip such as normal: dislocation grade is at 800-2000, impurityGrade is at 1200-2500; If treat, sorting silicon chip is defined as normal silicon chip, examines sheet machine and is sent into 2# inspection sheetBox; What three, meet following condition is the silicon chip such as abnormal: dislocation grade is greater than 2000, and impurity levels is greater than2500; If treat, sorting silicon chip is defined as abnormal silicon chip, examines sheet machine and is sent into 3# inspection film magazine; Wherein, instituteState laser beam emitting device and select laser instrument; Described data acquisition unit is selected camera; Described host computer is selectedComputer.
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| CN104259109A (en) * | 2014-07-28 | 2015-01-07 | 中国电子科技集团公司第四十八研究所 | Stepping silicon wafer quality sorting system |
| WO2016162398A1 (en) * | 2015-04-07 | 2016-10-13 | Albert-Ludwigs-Universität Freiburg | Apparatus for detecting electronic faults on silicon-based semiconductor wafers |
| CN105203305A (en) * | 2015-11-03 | 2015-12-30 | 山东华光光电子有限公司 | Nondestructive wavelength classifying and screening method for semiconductor laser |
| CN107481950A (en) * | 2017-07-28 | 2017-12-15 | 苏州阿特斯阳光电力科技有限公司 | A kind of quality stepping method and device based on PL detections |
| CN108445006B (en) * | 2018-04-11 | 2020-01-10 | 镇江仁德新能源科技有限公司 | Comparison method for photoelectric conversion efficiency of whole ingots of different polycrystalline silicon ingots |
| CN109580634A (en) * | 2018-12-03 | 2019-04-05 | 高佳太阳能股份有限公司 | A kind of confirmation method that diamond wire surface diamond is reunited |
| CN109580635B (en) * | 2018-12-03 | 2021-05-18 | 高佳太阳能股份有限公司 | Method for rapidly determining reason for uneven thickness of diamond-cut silicon wafer |
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