CN103515398A - Wafer level camera module array - Google Patents
Wafer level camera module array Download PDFInfo
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- CN103515398A CN103515398A CN201210214566.5A CN201210214566A CN103515398A CN 103515398 A CN103515398 A CN 103515398A CN 201210214566 A CN201210214566 A CN 201210214566A CN 103515398 A CN103515398 A CN 103515398A
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Abstract
A wafer level camera module array comprises a plurality of camera modules. Each camera module comprises a back focal length control layer. Each back focal length control layer possesses a same thickness and comprises a first control layer and a second control layer. The first control layer possesses a first thickness and a first refractive index. The second control layer possesses a second thickness and a second refractive index which is different from the first refractive index. For the plurality of back focal length control layers, the first thickness of the first control layer of the at least one back focal length control layer is different from the first thickness of the first control layer of the other back focal length control layers; or, the second thickness of the second control layer of the at least one back focal length control layer is different from the second thickness of the second control layer of the other back focal length control layers.
Description
Technical field
The present invention relates to a kind of camera model array, and be particularly related to a kind of wafer scale camera model array.
Background technology
In modern electronic product, wafer scale camera model is widely used on mobile phone and running gear.Due to scientific and technological progress, manufacturer can manufacture wafer scale camera model array by assembling different optical element or rete expediently, and is cut to many other camera models to produce in a large number a plurality of wafer scale camera models.In addition, compound lens camera model, for example three-dimensional camera, also can apply above-mentioned manufacture and manufacture.
Yet on industry is manufactured, according to the difference of design or the difference of technique, each lens on array may have different back focal length demands to form camera model with other optical element.Therefore,, in manufacture process, in order to obtain suitable back focal length (back focal length), each camera model on array may need to do other adjustment.Therefore, manufacture difficulty and manufacturing cost have all improved.
Summary of the invention
The invention provides a kind of wafer scale camera model array, its a plurality of camera models have identical back focal length and can reduce manufacture difficulty and manufacturing cost.
The invention provides a kind of wafer scale camera model array, it comprises a plurality of camera models.Each camera model comprises rear burnt key-course.After each, burnt key-course has identical thickness, and comprises the first key-course and the second key-course.The first key-course has the first thickness and first refractive rate, and the second key-course has the second thickness and the second refractive index that is different from first refractive rate.For a plurality of rear burnt key-courses, the first thickness of the first key-course of at least one rear burnt key-course is different from the first thickness of the first key-course of burnt key-course after other.Or the second thickness of the second key-course of at least one rear burnt key-course is different from the second thickness of the second key-course of burnt key-course after other.
According to embodiments of the invention, for a plurality of rear burnt key-courses, the first thickness of the first key-course of at least one rear burnt key-course is different from the first thickness of the first key-course of burnt key-course after other.And the second thickness of the second key-course of at least one rear burnt key-course is different from the second thickness of the second key-course of burnt key-course after other.
According to embodiments of the invention, for a plurality of rear burnt key-courses, after one of them, first thickness of the first key-course of burnt key-course and the summation of the second thickness of the second key-course equate in fact with another rear first thickness of the first key-course of burnt key-course and the summation of the second thickness of the second key-course wherein.
According to embodiments of the invention, for burnt key-course after each, the summation of the first thickness of the first key-course and the second thickness of the second key-course equals in fact the thickness of rear burnt key-course.
According to embodiments of the invention, each wafer scale camera model also comprises lens jacket and sensed layer.Lens jacket is disposed at rear burnt key-course, and sensed layer is configured under rear burnt key-course.Lens jacket via rear burnt key-course by video imaging in sensed layer, and rear burnt key-course to adjust the back focal length of camera model long.
Based on above-mentioned, by configuring and adjust the first thickness of the first key-course and second thickness of the second key-course of the rear burnt key-course of each between lens jacket and sensed layer of each camera model, in the situation that the thickness of burnt key-course can be reached the wafer scale camera model array that each camera model all has identical back focal length after not changing.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate appended graphic being described in detail below.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of wafer scale camera model array according to an embodiment of the invention.
Fig. 2 A is that camera model A is along the profile that is illustrated in the transversal section I-I ' in Fig. 1.
Fig. 2 B is that camera model B is along transversal section the I '-I being illustrated in Fig. 1 " profile.
Fig. 3 is the camera model that exemplary embodiment according to the present invention illustrates.
Embodiment
Fig. 1 is the schematic diagram of wafer scale camera model array according to an embodiment of the invention.Please refer to Fig. 1.In the present embodiment, wafer scale camera model array 100 comprises a plurality of camera models, take four camera model A, B, C and D as example explanation in this exposure.Wafer scale camera model array 100 comprises four camera model A, B, C and D, and each camera model comprises sensed layer 120, rear burnt key-course 140 and lens jacket 160.Although Fig. 1 is only painted with four camera models, yet quantity that it should be noted that camera model in wafer scale camera model array is not as limit, and can select according to design requirement.Lens jacket 160 is disposed on rear burnt key-course 140, and sensed layer 120 is disposed at rear burnt key-course 140 times.
As camera model, sensed layer 160 by rear burnt key-course 140 by video imaging in sensed layer 120, and rear burnt key-course 140 is in order to adjust the back focal length of camera model.Sensed layer 120 is in order to detect image, therefore Image sensor apparatus is for example charge coupled cell (charge couple device, CCD) or be that CMOS (Complementary Metal Oxide Semiconductor) sensor (Complementary Metal-Oxide Semiconductor sensor, CMOS sensor) can be embodied as sensed layer 120.Be disposed at the back focal length of the rear burnt key-course 140 adjustment camera models between lens jacket 160 and sensed layer 120 so that light is converged on the surface of sensed layer 120.
Fig. 2 A is that camera model A is along the profile that is illustrated in the transversal section I-I ' in Fig. 1.Please refer to Fig. 2 A, the rear burnt key-course 140A of camera model A comprises the first key-course 142A and the second key-course 144A and has thickness d.The first key-course 142A has the first thickness d a1 and first refractive rate n1, and the second key-course 144A has the second thickness d a2 and is different from the second refractive index n 2 of first refractive rate n1.The first key-course 142A can be formed to have different refractive indexes by different materials from the second key-course 144A.That is to say, the material of the first key-course 142A is different from the material of the second key-course 144A.Due to optical path difference (optical path length, OPL) be the product of the geometrical path length of light and the refractive index of the material that light penetrates, therefore by configuring and adjust the first thickness d a1 of the first key-course 142A and the second thickness d a2 of the second key-course 144A, can change the optical path difference of rear burnt key-course 140A.The optical path difference of the rear burnt key-course 140A of camera model A is expressed as follows:
OPL=da1×n1+da2×n2
Therefore, the back focal length of camera model A also thereby adjusted and can equate with the thickness d of rear burnt key-course.So light can converge on the surperficial S1 of sensed layer 120.
Yet wafer scale camera model array comprises a plurality of camera models, and different camera models has different lens jacket design and different back focal length.Therefore,, in order to keep all camera models to have back focal length identical and that equate with rear burnt key-course thickness, applied rear burnt key-course comprises the first key-course and the second key-course herein.According to above-mentioned, by adjustment, there is the thickness of the first key-course of first refractive rate, and there is the thickness of the second key-course of the second refractive index, in camera model, various back focal length can be adjusted to identical.
According to exemplary embodiment of the present invention, the first thickness d 1 of the first key-course 142 of rear burnt key-course 140 is wherein different from the first thickness of the first key-course of burnt key-course after other.Or the second thickness d 2 of the second key-course 144 of rear burnt key-course 140 is wherein different from the second thickness of the second key-course of burnt key-course after other, this is due to the design difference of lens module or manufacture process difference.
Fig. 2 B is that camera model B is along transversal section the I '-I being illustrated in Fig. 1 " profile.According to exemplary embodiment of the present invention, the rear burnt key-course 140B of camera model B comprises the first key-course 142B and the second key-course 144B, and also has the thickness d identical with the rear burnt key-course of camera model A.The first key-course 142B has the first thickness d b1 and first refractive rate n1, and the second key-course 144B has one second thickness d b2 and the second refractive index n 2.It is worth mentioning that, in the present embodiment, in camera model A, the first key-course 142A material used material used with the first key-course 142B in camera model B is identical.And in camera model A, the second key-course 144A material used is identical with the second key-course 144B in camera model B.
In exemplary embodiment of the present invention, although camera model A and camera model B are configured on same wafer scale camera model array, camera model A and camera model B are different camera models.So camera model A has different back focal length from camera model B.Therefore, please refer to Fig. 2 A and Fig. 2 B, for the camera model A back focal length different with camera model B changed into identical, the first thickness d a1 of the first key-course 142A of camera model A is different from the first thickness d b1 of the first key-course 142B of camera model B, and the second thickness d b2 of the second thickness d a2 of the second key-course 144A of camera model A and the second key-course 144B of camera model B is different.
The present embodiment is to adjust the first thickness d a1 of the first key-course 142A of camera model A and the thickness that the second thickness d a2 of the second key-course 144A not changes each rear burnt key-course 140.Similarly, the first thickness d b1 of the first key-course 142B of camera model B and the second thickness d b2 of the second key-course 144B are also adjusted.Therefore, the optical path difference of camera model A and B is changed respectively, and the light that therefore penetrated camera model A and the B rear burnt key-course 140 in both converges on the surperficial S1 of sensed layer 120 because of the design of the first key- course 142A and 142B and the second key-course 144A and 144B.Although the first thickness d a1 of the rear burnt key-course 140A of camera model A and the second thickness d a2 are different from the first thickness d b1 and the second thickness d b2 of the rear burnt key-course 140B of camera model B, rear burnt key-course 140A and the 140B of camera model A and B all have identical thickness d.That is to say, camera model A and B meet following condition:
da1+da2=db1+db2=d
A plurality of rear burnt key-course for camera model array 100, after one of them, the first thickness of burnt key-course and the summation of the second thickness equate in fact with the first thickness of burnt key-course after another and the summation of the second thickness.On the other hand, for burnt key-course after each, the first thickness of the first key-course equates in fact with the summation of the second thickness of the second key-course and the thickness of rear burnt key-course.
Although rear burnt key-course can comprise the first key-course and the second key-course being formed by various materials, in another exemplary embodiment, rear burnt key-course can be formed by different modes.Fig. 3 is the camera model that exemplary embodiment according to the present invention illustrates.Camera model 300 comprises sensed layer 320, rear burnt key-course 340 and lens jacket 360, and rear burnt key-course 340 comprises the first key-course 342 and the second key-course 344.In addition, the first key-course 342 can comprise the gaseous matter with refractive index, for example air.Yet the present invention is not as limit, the first key-course 342 can comprise the fluent material with another refractive index.In addition, according to another embodiment (not being illustrated in Fig. 3), the first key-course also can be formed by solid material, but the second key-course can comprise fluent material or gaseous matter.
Be illustrated in camera model A and camera model B in Fig. 2 A and Fig. 2 B
According to aforesaid embodiment, be different camera model, yet the present invention is not as limit.In Fig. 1, use camera model A, B, C and D as example, in exemplary embodiment of the present invention, camera model A, B, C and D can be four kinds of dissimilar camera models.The first thickness of each camera model is different from the first thickness of another kind of camera model, and the second thickness of each camera model is different with the second thickness of another kind of camera model.In another exemplary embodiment, camera model A and B can be the camera model of same type, and camera model C and D can be the camera model of another kind of type.The above has at least two kinds of camera models to be arranged at wafer scale camera model array for illustrating in the present invention, but the arrangement mode of different cameral module and quantity is not as limit.
In sum, according to exemplary embodiment of the present invention, each camera model comprises having the first key-course of being formed by different materials respectively and the rear burnt key-course of the second key-course.Although the first key-course of each camera model and the thickness of the second key-course are different from the first key-course of another camera model and the thickness of the second key-course, the thickness of rear burnt key-course is all identical.Therefore, all back focal length that are configured in the camera model on wafer scale camera model array are also identical, and manufacture difficulty and cost of manufacture can be lowered.
Although the present invention discloses as above with embodiment; so it is not in order to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can make many modifications and modification, therefore protection scope of the present invention is when being as the criterion depending on claims.
Claims (5)
1. a wafer scale camera model array, comprising:
A plurality of camera models, are arranged in array, and wherein described in each, lens module comprises rear burnt key-course, and after described in each, burnt key-course has identical thickness and comprises:
The first key-course, has the first thickness and first refractive rate; And
The second key-course, has the second thickness and is different from the second refractive index of described first refractive rate,
Wherein, for described a plurality of rear burnt key-courses, the first thickness of the first key-course of at least one rear burnt key-course is different from the first thickness of the first key-course of burnt key-course after other, or the second thickness of the second key-course of at least one rear burnt key-course is different from the second thickness of the second key-course of burnt key-course after other.
2. wafer scale camera model array as claimed in claim 1, wherein for described a plurality of rear burnt key-courses, the first thickness of the first key-course of at least one rear burnt key-course is different from the first thickness of the first key-course of burnt key-course after other, and the second thickness of the second key-course of at least one rear burnt key-course is different from the second thickness of the second key-course of burnt key-course after other.
3. wafer scale camera model array as claimed in claim 1, wherein, for described a plurality of rear burnt key-courses, after one of them, first thickness of the first key-course of burnt key-course and the summation of the second thickness of the second key-course equate in fact with another rear first thickness of the first key-course of burnt key-course and the summation of the second thickness of the second key-course wherein.
4. wafer scale camera model array as claimed in claim 1, wherein for camera model described in each, the summation of the first thickness of described the first key-course and the second thickness of described the second key-course equals in fact the thickness of described rear burnt key-course.
5. wafer scale camera model array as claimed in claim 1, wherein described in each, camera model also comprises:
Lens jacket, is disposed at described rear burnt key-course; And
Sensed layer, is disposed under described rear burnt key-course,
Wherein, described lens jacket via described rear burnt key-course by video imaging in described sensed layer, and the back focal length that described rear burnt key-course is adjusted described camera model is long.
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| CN201210214566.5A CN103515398A (en) | 2012-06-27 | 2012-06-27 | Wafer level camera module array |
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| CN201210214566.5A CN103515398A (en) | 2012-06-27 | 2012-06-27 | Wafer level camera module array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104917937A (en) * | 2014-03-10 | 2015-09-16 | 奇景光电股份有限公司 | Image acquisition module and camera lens unit array thereof |
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| CN1505164A (en) * | 2002-10-25 | 2004-06-16 | ���뵼�壨�Ϻ����������ι�˾ | Image sensor having combination color filter and concave-shaped micro-lenses |
| US20060011932A1 (en) * | 2004-07-15 | 2006-01-19 | Dongbuanam Semiconductor Inc. | Complementary metal oxide semiconductor image sensor and method for fabricating the same |
| TWI287301B (en) * | 2004-12-30 | 2007-09-21 | Magnachip Semiconductor Ltd | Image sensor capable of adjusting focusing length for individual color and fabrication method thereof |
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- 2012-06-27 CN CN201210214566.5A patent/CN103515398A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1505164A (en) * | 2002-10-25 | 2004-06-16 | ���뵼�壨�Ϻ����������ι�˾ | Image sensor having combination color filter and concave-shaped micro-lenses |
| US20060011932A1 (en) * | 2004-07-15 | 2006-01-19 | Dongbuanam Semiconductor Inc. | Complementary metal oxide semiconductor image sensor and method for fabricating the same |
| TWI287301B (en) * | 2004-12-30 | 2007-09-21 | Magnachip Semiconductor Ltd | Image sensor capable of adjusting focusing length for individual color and fabrication method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104917937A (en) * | 2014-03-10 | 2015-09-16 | 奇景光电股份有限公司 | Image acquisition module and camera lens unit array thereof |
| CN104917937B (en) * | 2014-03-10 | 2018-10-26 | 奇景光电股份有限公司 | Image-pickup assembly and its lens unit array |
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Application publication date: 20140115 |