CN103515301A - Method for forming groove - Google Patents
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- CN103515301A CN103515301A CN201210224449.7A CN201210224449A CN103515301A CN 103515301 A CN103515301 A CN 103515301A CN 201210224449 A CN201210224449 A CN 201210224449A CN 103515301 A CN103515301 A CN 103515301A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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Abstract
The invention discloses a method for forming a groove. The method comprises the steps that a substrate is provided, wherein a dielectric layer and a mask layer are formed on the substrate, a plurality of through holes are formed in the dielectric layer and the mask layer, and optical approximate layers are formed on the mask layer and in the through holes; a dry etching process is executed many times to remove part of the optical approximate layer on the mask layer, and the height difference of the remaining optical approximate layers in the through holes of all areas on the substrate is made to be smaller than a preset value. Through the method, the defects of a copper hill (hill-lock) are reduced, and meanwhile device electromigration defects can be effectively restrained.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, particularly a kind of formation method of groove.
Background technology
At present, at semiconductor integrated circuit, manufacture field, after semiconductor device layer forms, in back segment (back end of line, the BEOL) technique of semiconductor device, need on semiconductor device layer, form metal interconnection layer, every layer of metal interconnection layer comprises metal interconnection wire and interlayer dielectric layer, this just needs the above-mentioned inter-level dielectric of etching to form connecting hole (Via) and groove (trench), plated metal in above-mentioned groove and connecting hole then, the metal composition metal interconnection wire of deposition.Along with the progressively raising of integrated circuit integrated level, the size of semiconductor device continues scaled, generally selects copper as metal interconnected wire material in BEOL.
Device before etching groove comprises as shown in Figure 1: substrate 101; Be formed at the metal connecting line layer 102 on described substrate 101, described metal connecting line layer 102 is copper particularly; Be formed at the metal connecting line protective layer 103 on described metal connecting line layer 102; Be formed at the dielectric layer 104 on described metal connecting line protective layer 103; Be formed at the mask layer 105 on described dielectric layer 104; The through hole 106 that runs through described mask layer 105 and dielectric layer 104; Be formed on described mask layer 105 and fill up the optical approximate layer (optical proximity layer, OPL) 107 of described through hole 106; Be formed at oxide layer 108(low temperature oxide, LTO on described optical approximate layer 107); Be formed at anti-reflecting layer 109(anti reflect coating, ARC in described oxide layer 108) and be formed at the patterned photoresistance 110 on described anti-reflecting layer 109.
In the prior art, the technique that groove forms mainly comprises etching and the etching groove of optical approximate layer in through hole.After in through hole, the etching of optical approximate layer finishes, on the one hand, require will guarantee that residue has certain thickness OPL to exist in through hole 106, to guarantee to protect the metal of the metal connecting line layer 102 of lower floor to be etched in follow-up etching groove; On the other hand, also require the thickness of the interior residue of through hole 106 OPL can not be too thick, remaining OPL is blocked up can latter two adjacent through-holes of the follow-up etching groove of impact between shape and the thickness of dielectric layer.
When if the thickness of through hole 106 interior remaining OPL is too thick, after etching groove, as shown in Figure 2, the thickness of the dielectric layer 111 between two adjacent through-holes also can be thicker, and the dielectric layer 111 bight between two adjacent through-holes can present sharp-pointed horn shape 112, after upper/lower layer metallic is interconnected, if while having electric current to pass through on upper/lower layer metallic interconnection line in device work, dielectric layer 111 bight 112 between two adjacent through-holes there will be ELECTROMIGRATION PHENOMENON (electro migration, EM), thus affect the reliability of device.
In order to suppress above-mentioned EM phenomenon, main by the thickness of the interior residue of through hole 106 OPL after the etching reduction via etch of optical approximate layer in reinforcement through hole in prior art, can make the less thick of the dielectric layer 111 between latter two adjacent through-holes of etching groove, the shape in bight 112 also can make moderate progress simultaneously.But; after strengthening the etching of optical approximate layer in through hole; because the existence of the inhomogeneity of etching; the situation that may occur the complete etching of OPL quilt in some through hole; if while be there is defect again by the metal connecting line protective layer 103 of complete etching while through hole 106 bottoms in the OPL in through hole 106; along with the copper that carries out metal connecting line layer 102 of OPL etching can also can be etched, etching out copper can progressively be diffused into that groove top is final forms hillock (hill-lock), thereby causes bad.
As the above analysis, if strengthen via etch, the electromigratory phenomenon of device can make moderate progress, but the bad occurrence probability of hill-lock can increase; If weaken via etch, hill-lock is bad can be reduced, but the phenomenon of device electromigration failures can increase.Because the inhomogenous existence of via etch, is difficult to find applicable via etch condition, cause the bad and device electromigration failures of hill-lock to improve simultaneously.Therefore be necessary to develop the generation of the electromigration failures that a kind of groove forming method can suppression device when reducing the bad incidence of hill-lock.
Summary of the invention
The invention provides a kind of groove forming method, the generation of electromigration failures that can suppression device when reducing the bad incidence of hill-lock.
For solving the problems of the technologies described above, the invention provides a kind of groove forming method, comprising:
One substrate is provided, on described substrate, is formed with dielectric layer and mask layer, in described dielectric layer and mask layer, be formed with a plurality of through holes, on described mask layer and in a plurality of through hole, be formed with optical approximate layer; And
Carry out repeatedly dry etch process, to remove the part optical approximate layer on described mask layer, and make the poor predetermined value that is less than of remaining optical approximate layer height in the through hole in described substrate Shang Ge region.
Optionally, described predetermined value is 50nm.
Optionally, described repeatedly dry etch process comprises dry etch process and for the second time dry etch process for the first time, wherein,
Described dry etch process for the first time, removes part optical approximate layer on described mask layer and the optical approximate layer of the segment thickness in described through hole, exposes the surface of described mask layer;
Described dry etch process for the second time, removes the optical approximate layer of the segment thickness in described through hole;
Described dry etch process is for the first time contrary in the distribution in described substrate Shang Ge region to the etch amount of the optical approximate layer in described through hole with described dry etch process for the second time in the distribution in described substrate Shang Ge region to the etch amount of the optical approximate layer in described through hole.
Optionally, described dry etch process for the first time progressively increases progressively from substrate center to edges of substrate the etch amount of the optical approximate layer in described through hole, and described dry etch process for the second time is progressively successively decreased from substrate center to edges of substrate to the optical approximate layer etch amount in described through hole.
Optionally, the air pressure of described dry etch process is for the first time lower than the air pressure of described dry etch process for the second time.
Optionally, the air pressure range of described dry etch process is for the first time 13mTorr ~ 17mTorr, and the air pressure range of described dry etch process is for the second time 18mTorr ~ 22mTorr.
Optionally, described dry etch process for the first time passes into carbon dioxide, and described dry etch process for the second time passes into hydrogen and nitrogen.
Optionally, the range of flow of the carbon dioxide of described dry etch process is for the first time 370L/min ~ 430L/min, and the range of flow of the hydrogen of described dry etch process is for the second time that the range of flow of 270L/min ~ 330L/min, nitrogen is 270L/min ~ 330L/min.
Optionally, described dry etch process for the first time and for the second time the high frequency power scope of dry etching be that 650W ~ 750W, low frequency power are 0W.
Optionally, described dry etch process for the first time is progressively successively decreased from substrate center to edges of substrate to the etch amount of the optical approximate layer in described through hole, and described dry etch process for the second time progressively increases progressively from substrate center to edges of substrate the optical approximate layer etch amount in described through hole.
Optionally, on described substrate, also comprise:
Be formed at the metal connecting line layer in described substrate;
Be formed at the metal connecting line protective layer on described substrate and metal connecting line layer;
Be formed at the oxide layer on described optical approximate layer;
Be formed at the anti-reflecting layer on described oxide layer; And be formed at the patterned photoresistance on described anti-reflecting layer.
Optionally, before carrying out repeatedly dry etch process, also comprise:
The described patterned photoresistance of take is mask, and etching is removed part anti-reflecting layer, exposes the surface of described oxide layer; And
It is mask that described patterned photoresistance is take in continuation, and etching is removed partial oxidation layer, exposes the surface of described optical approximate layer.
Optionally, after carrying out repeatedly dry etch process, also comprise: etching is removed the oxide layer on described optical approximate layer, remove two mask layers on the dielectric layer between adjacent through-holes simultaneously;
The described optical approximate layer of take is mask, and etching is removed the dielectric layer of segment thickness between two adjacent through-holes;
Peel off optical approximate layer and the interior remaining optical approximate layer of through hole removed on described mask layer, expose the surface of the surface of mask layer and the metal connecting line protective layer of via bottoms; And
Etching is removed the metal connecting line protective layer of through hole below, exposes described metal connecting line layer.
In method in the present invention at etching groove, adopted the repeatedly method of dry etching removal optical approximate layer (OPL), can effectively improve the homogeneity of residue OPL thickness in through hole, therefore can be by the THICKNESS CONTROL of remaining OPL in through hole in a less scope, and guarantee there will not be in indivedual through holes OPL by the situation of etching completely.On the one hand, because there will not be in through hole residue OPL by etching completely, also just there will not be that copper hill-lock's is bad.On the other hand, the less thickness of residue OPL has guaranteed that dielectric layer below the groove thickness after etching groove is smaller in through hole, can make the thickness of the dielectric layer after etching groove be less than the dielectric layer before etching groove thickness 30%, thereby suppressed the generation of the electromigration failures of device.That is, the present invention, when reducing copper hill-lock bad, has effectively suppressed the generation of the electromigration failures of device.
Accompanying drawing explanation
Fig. 1 is the device profile map before etching groove in prior art;
Fig. 2 is the device profile map after etching groove in prior art;
Fig. 3-Figure 15 is the device profile map in each step in the formation method of groove of the embodiment of the present invention;
Figure 16-Figure 17 is the flat distribution map of device in the formation method of groove of the embodiment of the present invention.
Embodiment
Core concept of the present invention is to improve by dry etching optical approximate layer (OPL) repeatedly the homogeneity of via etch, and the improvement of via etch homogeneity brings the improvement of residue OPL thickness homogeneity in through hole.On the one hand, the improvement of residue OPL thickness homogeneity can guarantee not occur in etching groove process that OPL in through hole is by the phenomenon of etching completely in through hole, thereby the metal connecting line layer of stopping via bottoms is etched and causes the generation of copper hillock (hill-lock).On the other hand, in through hole, the improvement of residue OPL thickness homogeneity, also can realize the improvement of the dielectric layer shape between latter two adjacent through-holes of etching groove, thus the effectively generation of the electromigration failures of suppression device.
In order to make object of the present invention, technical scheme and advantage are clearer, below in conjunction with Fig. 3 to Figure 17, each step of groove forming method of the present invention are elaborated.
First, as shown in Figure 3, provide a substrate 201, on described substrate 201, be formed with metal connecting line layer 202, be formed at the metal connecting line protective layer 203 on described metal connecting line layer 202, described metal connecting line layer 202 is preferably copper connecting lines layer.
Then, as shown in Figure 4, on described metal connecting line protective layer 203, deposition forms dielectric layer 204, and on described dielectric layer 204, deposition forms mask layer 205.Preferably, described dielectric layer is preferably low K dielectric layer.In the present embodiment, described dielectric layer 204 is black diamond, the silica of described mask layer 205 for utilizing tetraethoxysilane (TEOS) to form.
Then, as shown in Figure 5, etching is removed the described mask layer 205 of part and dielectric layer 204, forms the through hole 206 that runs through described mask layer 205 and dielectric layer 204, and the bottom of described through hole 206 is the surface of described metal connecting line protective layer 203; The depth bounds of described through hole 206 is
Then, as shown in Figure 6, on described mask layer 205 and the interior deposition of through hole 206 form OPL layer (optical approximate layer) 207, described OPL layer is for example preferably organic material of bottom anti-reflection layer (Barc) or other filling capacity, for example, be photoresistance.On described mask layer, the thickness range of 205 OPL layer is
Then, as shown in Figure 7, on described OPL layer 207, form oxide layer 208, in described oxide layer 208, form anti-reflecting layer 209; On described anti-reflecting layer 209, form patterned photoresistance 210.Described oxide layer 208 is cryogenic oxidation silicon, and described oxide layer 208 is used as mask layer in the etching of OPL, and the thickness range of described oxide layer is
Then, as shown in Figure 8, etching is removed part anti-reflecting layer 209, exposes the surface of oxide layer 208.
Then, as shown in Figure 9, etching is removed partial oxidation layer 208, exposes the surface of OPL layer 207.
Then, carry out committed step of the present invention, that is, carry out repeatedly dry etch process, to remove the part optical approximate layer on described mask layer, and make the poor predetermined value that is less than of remaining optical approximate layer height in the through hole in described substrate Shang Ge region.Known, limit by dry etching technology, cannot guarantee the interior uniformity of sheet (the etching homogeneity of regional in same wafer) of etching process,, existence due to the inhomogeneity of dry etching, after a dry etching, there will be the situation of the OPL etch thicknesses inequality in through hole.Specifically, the factor that affects etching homogeneity in dry etching mainly contains air pressure, etching power, gas flow and gaseous species etc., in traditional dry etching technology, only carry out dry etching one time, carry out the situation that there will be etch amount progressively to increase progressively or successively decrease after this etching technics from substrate center to edges of substrate.Although by adjusting the various technological parameters in dry etching, can optimize the homogeneity of etch amount, cannot eliminate this etching inhomogeneity completely all the time, and the scope that etch amount is optimized is also very limited.Thereby, the present invention proposes repeatedly the concept of dry etching, by carrying out repeatedly dry etch process, utilize repeatedly dry etch process to carry out complementation, the interior poor predetermined value that is less than of remaining optical approximate layer height of through hole that makes described substrate Shang Ge region, described predetermined value is for example 50nm.
As shown in figure 10, in the present embodiment, described repeatedly dry etch process comprises dry etch process and for the second time dry etch process for the first time, while carrying out for the first time dry etch process, remove part OPL layer 207 on described mask layer 206 and the optical approximate layer of the segment thickness in described through hole, expose the surface of part mask layer 205, while carrying out for the second time dry etching, remove the OPL of the segment thickness in described through hole 206.
Particularly, by the various process conditions of dry etch process are for the first time set, make through after dry etching for the first time, there is the present a certain plane distribution of dry etching to the etch amount of the optical approximate layer in described through hole for the first time, again by the various process conditions of dry etching are for the second time set, make substrate through after dry etching for the second time, occur that dry etching is for the second time to the etch amount of the optical approximate layer in described through hole and dry etching is contrary to the etch amount of the optical approximate layer in described through hole for the first time plane distribution.Because twice etching amount present contrary distribution trend, after twice dry etching, the inhomogeneity that twice etching amount distributes can be cancelled out each other, and makes the homogeneity of twice etching amount summation obtain larger improvement.
More specifically, by the condition setting of twice dry etching, dry etching for the first time is progressively increased progressively from substrate center to edges of substrate the etch amount of the optical approximate layer in described through hole, and dry etching progressively successively decrease from substrate center to edges of substrate for the second time to the etch amount of the optical approximate layer in described through hole.Certainly, also can pass through the condition setting of twice dry etching, dry etching for the first time is progressively successively decreased from substrate center to edges of substrate to the etch amount of the optical approximate layer in described through hole, and dry etching progressively increase progressively from substrate center to edges of substrate for the second time to the etch amount of the optical approximate layer in described through hole.
For example, as shown in figure 16, through after dry etching for the first time, occur that the etch amount of dry etching progressively increases progressively from substrate center to edges of substrate for the first time, etch amount 211 at substrate 201 cores is 100nm, from core, progressively to marginal portion, advance, etch amount 211 is increased to 200nm until the 300nm of marginal portion from 100nm.As shown in figure 17, through after dry etching for the second time, occur that the etch amount of dry etching is progressively passed and successively decreased from substrate center to edges of substrate for the second time, etch amount 211 at the core of substrate 201 is 300nm, from core, progressively to marginal portion, advance, etch amount 211 is reduced to 200nm until the 100nm of marginal portion from 300nm.Certainly, above-mentioned etch amount is schematic example, and the distribution of twice dry etching amount in other embodiments and how many meetings of etch amount are carried out respective change according to the difference of the condition of twice dry etching.
In the present embodiment, the air pressure of described dry etching for the first time, lower than the air pressure of dry etching for the second time, is passing into carbon dioxide in dry etching for the first time, is passing into hydrogen and nitrogen for the second time in dry etching.Concrete, the air pressure range of described dry etching is for the first time 13mTorr ~ 17mTorr, the air pressure range of described dry etching is for the second time 18mTorr ~ 22mTorr.In described dry etching for the first time, the range of flow of carbon dioxide is 370L/min ~ 430L/min, and in described dry etching for the second time, the range of flow of hydrogen is that the range of flow of 270L/min ~ 330L/min, nitrogen is 270L/min ~ 330L/min.The high frequency power scope of described dry etching for the first time and for the second time dry etching is 650W ~ 750W, low frequency power is 0W.
What adopt in the present embodiment is twice dry etching, should be understood that, also above etching technics can be carried out three times, as long as repeatedly dry etching carries out complementation to the etch amount of the optical approximate layer in described through hole in the distribution in described substrate Shang Ge region, object of the present invention can be realized.
Below in conjunction with Figure 11 to Figure 15, the etching groove step of follow-up routine is described, because the present invention does not relate to the improvement of following steps, thereby just schematically introduce, but those skilled in the art should know.Wherein, Fig. 3 to Figure 10 carries out section along certain direction (as directions X), and Figure 11 to Figure 15 carries out section along the other direction (as Y-direction) vertical with described certain direction, and it shows the structure of two through holes simultaneously.
As shown in FIG. 11 and 12, optical approximate layer and oxide layer on mask layer between two through holes are removed, then etching is removed oxide layer 208, mask layer 205 on dielectric layer 204 when etching is removed oxide layer 208 between two adjacent through-holes 206 is also etched away, and exposes the surface of two dielectric layers 204 between adjacent through-holes 206.
As shown in figure 13, the described OPL layer 207 of take is mask, and etching is removed the dielectric layer 204 of segment thickness between two adjacent through-holes 206, forms the groove 212 across two adjacent through-holes.After etching groove, the thickness H2 of remaining dielectric layer depends on the thickness of described through hole 206 interior remaining OPL, and the thickness of through hole 206 interior remaining OPL is thicker, and after etching groove, the thickness H2 of remaining dielectric layer is larger, otherwise H2 is less.The thickness H2 of the dielectric layer after etching groove be less than or equal to the dielectric layer before etching groove thickness H1 30% time, the sharp-pointed bight of groove 212 dielectric layer below can disappear, thus the effectively generation of the electromigration failures of suppression device.
As shown in figure 14, peel off the OPL layer 207 and the interior remaining OPL of through hole 206 that remove on mask layer 205, expose the surface of the surface of mask layer 205 and the metal connecting line protective layer 203 of via bottoms.
Finally, as shown in figure 15, etching is removed the metal connecting line protective layer 203 of through hole below, exposes metal connecting line layer 202, can carry out the techniques such as known copper plating subsequently, repeats no more herein.
In sum, in the present invention in groove forming method, adopted the repeatedly method of dry etching removal OPL, can effectively improve the homogeneity of residue OPL thickness in through hole, therefore can make the thickness of remaining OPL in through hole in a less scope, and guarantee there will not be, have the interior OPL quilt of the indivedual through holes situation of etching completely.On the one hand, because can't occur in through hole that residue OPL is by etching completely, also just there will not be that copper hill-lock's is bad.On the other hand, in through hole, the less thickness of residue OPL has guaranteed that the thickness of the thickness H2 of groove 212 dielectric layer below after etching groove is smaller, can make the thickness H2 of the dielectric layer after etching groove be less than the dielectric layer before etching groove thickness H1 30%, thereby suppressed the generation of the electromigration failures of device.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these change and modification.
Claims (13)
1. a formation method for groove, comprising:
One substrate is provided, on described substrate, is formed with dielectric layer and mask layer, in described dielectric layer and mask layer, be formed with a plurality of through holes, on described mask layer and in a plurality of through hole, be formed with optical approximate layer; And
Carry out repeatedly dry etch process, to remove the part optical approximate layer on described mask layer, and make the poor predetermined value that is less than of remaining optical approximate layer height in the through hole in described substrate Shang Ge region.
2. the formation method of groove as claimed in claim 1, is characterized in that, described predetermined value is 50nm.
3. the formation method of groove as claimed in claim 1, is characterized in that, described repeatedly dry etch process comprises dry etch process and for the second time dry etch process for the first time, wherein,
Described dry etch process for the first time, removes part optical approximate layer on described mask layer and the optical approximate layer of the segment thickness in described through hole, exposes the surface of described mask layer;
Described dry etch process for the second time, removes the optical approximate layer of the segment thickness in described through hole;
Described dry etch process is for the first time contrary in the distribution in described substrate Shang Ge region to the etch amount of the optical approximate layer in described through hole with described dry etch process for the second time in the distribution in described substrate Shang Ge region to the etch amount of the optical approximate layer in described through hole.
4. the formation method of groove as claimed in claim 3, it is characterized in that, described dry etch process for the first time progressively increases progressively from substrate center to edges of substrate the etch amount of the optical approximate layer in described through hole, and described dry etch process for the second time is progressively successively decreased from substrate center to edges of substrate to the optical approximate layer etch amount in described through hole.
5. the formation method of groove as claimed in claim 4, is characterized in that, the air pressure of described dry etch process is for the first time lower than the air pressure of described dry etch process for the second time.
6. the formation method of groove as claimed in claim 5, is characterized in that, the air pressure range of described dry etch process is for the first time 13mTorr ~ 17mTorr, and the air pressure range of described dry etch process is for the second time 18mTorr ~ 22mTorr.
7. the formation method of groove as claimed in claim 4, is characterized in that, described dry etch process for the first time passes into carbon dioxide, and described dry etch process for the second time passes into hydrogen and nitrogen.
8. the formation method of groove as claimed in claim 7, it is characterized in that, the range of flow of the carbon dioxide of described dry etch process is for the first time 370L/min ~ 430L/min, and the range of flow of the hydrogen of described dry etch process is for the second time that the range of flow of 270L/min ~ 330L/min, nitrogen is 270L/min ~ 330L/min.
9. the formation method of groove as claimed in claim 4, is characterized in that, the high frequency power scope of described dry etch process for the first time and for the second time dry etching is that 650W ~ 750W, low frequency power are 0W.
10. the formation method of groove as claimed in claim 3, it is characterized in that, described dry etch process for the first time is progressively successively decreased from substrate center to edges of substrate to the etch amount of the optical approximate layer in described through hole, and described dry etch process for the second time progressively increases progressively from substrate center to edges of substrate the optical approximate layer etch amount in described through hole.
The formation method of 11. grooves as described in any one in claim 1 to 10, is characterized in that, on described substrate, also comprises:
Be formed at the metal connecting line layer in described substrate;
Be formed at the metal connecting line protective layer on described substrate and metal connecting line layer;
Be formed at the oxide layer on described optical approximate layer;
Be formed at the anti-reflecting layer on described oxide layer; And
Be formed at the patterned photoresistance on described anti-reflecting layer.
The formation method of 12. grooves as claimed in claim 11, is characterized in that, before carrying out repeatedly dry etch process, also comprises:
The described patterned photoresistance of take is mask, and etching is removed part anti-reflecting layer, exposes the surface of described oxide layer; And
It is mask that described patterned photoresistance is take in continuation, and etching is removed partial oxidation layer, exposes the surface of described optical approximate layer.
The formation method of 13. grooves as claimed in claim 12, is characterized in that, after carrying out repeatedly dry etch process, also comprises:
Etching is removed the oxide layer on described optical approximate layer, removes two mask layers on the dielectric layer between adjacent through-holes simultaneously;
The described optical approximate layer of take is mask, and etching is removed the dielectric layer of segment thickness between two adjacent through-holes;
Peel off optical approximate layer and the interior remaining optical approximate layer of through hole removed on described mask layer, expose the surface of the surface of mask layer and the metal connecting line protective layer of via bottoms; And
Etching is removed the metal connecting line protective layer of through hole below, exposes described metal connecting line layer.
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| TWI603449B (en) * | 2015-10-06 | 2017-10-21 | 格羅方德半導體公司 | Forming interconnect features with reduced sidewall tapering |
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|---|---|---|---|---|
| TWI603449B (en) * | 2015-10-06 | 2017-10-21 | 格羅方德半導體公司 | Forming interconnect features with reduced sidewall tapering |
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