CN103500766A - 宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器及其制备方法与应用 - Google Patents
宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器及其制备方法与应用 Download PDFInfo
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Abstract
本发明提供一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，包括由下而上顺次设置的GaAs衬底、GaAs底接触层，所述的GaAs底接触层包括凸起的台形结构，在所述台形结构上顺次设置有多量子阱层MQW、GaAs顶接触层和上电极，在所述所述的GaAs底接触层上还设置有下电极；所述的多量子阱层MQW为周期交替生长的AlxGa1-xAs层和GaAs层；所述的红外探测器根据超晶格量子阱结构中的电子干涉理论，通过对于超晶格结构参数的精细设计，在势垒顶以上引入几个分立的微带，在外电场作用下，光电子跃迁形成相应的几个光电流峰彼此相互交叠，从而使光谱带宽增大。
Description
技术领域
本发明涉及宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器及其制备方法与应用，属于半导体红外探测器的技术领域。
背景技术
红外探测器作为当今高科技领域的重要发展方向，在民用、军事、太空等诸多领域都取得了显著的成绩。六十年代的硅基化合物探测器其截止响应波长很难达到长波长波段，1980年之后HgCdTe探测器日益发展成熟但是其越来越不能满足人们对于探测器的均匀性和大面积阵列的需求，QWIP探测器是近年来国际上的高新技术。QWIP探测器具有响应速度快，探测率与HgCdTe探测器相近，可人工调制探测波长等优点，但其光谱响应带宽较HgCdTe探测器来比较窄。
光谱响应带宽较窄带来了一些波长的光信号的丢失从而影响了热成像质量，S.V.Bandara et al报导了对GaAs/AlGaAs材料系统用几个不同阱宽和阱深的量子阱构成一个基本单元，然后用多个这样的基本单元制成一个量子阱红外探测器，其光谱带宽已达到Δλ/λP=42%，但是其制作工艺相当复杂。
发明内容
发明概述
针对现有技术的问题，本申请提供一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器。所述的红外探测器根据超晶格量子阱结构中的电子干涉理论，通过对于超晶格结构参数的精细设计，在势垒顶以上引入几个分立的微带，在外电场作用下，光电子跃迁形成相应的几个光电流峰彼此相互交叠，从而使光谱带宽增大。
本发明还提供了上述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器及其制备方法。
本发明还提供了在8-14μm长波段的宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的应用。
发明详述
本发明的技术方案如下：
一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，包括由下而上顺次设置的GaAs衬底、GaAs底接触层，所述的GaAs底接触层包括凸起的台形结构，在所述台形结构上顺次设置有多量子阱层MQW、GaAs顶接触层和上电极，在所述所述的GaAs底接触层上还设置有下电极；所述的多量子阱层MQW为周期交替生长的AlxGa1-xAs层和GaAs层；根据探测所需的红外光子频率和光谱展宽应用量子干涉模型设计量子阱区域的势垒宽度、势阱宽度、组分、掺杂浓度：
所述量子阱层MQW的交替生长周期为40-60，优选的选取周期为50；其中GaAs层厚度为4.7nm，Si掺杂浓度为0.6-1*10^18cm-3，优选的Si掺杂浓度为7*10^17cm-3；AlxGa1-xAs层厚度为21nm，不掺杂，势垒高度由AlxGa1-xAs中的Al组分x决定，x的取值为0.29-0.31，优选的选取x为0.29；
所述的GaAs底接触层的Si掺杂浓度为0.5-2*10^18cm-3,厚度为1μm；优选的Si的掺杂浓度为1*10^18cm-3；
其中所述的GaAs顶接触层的Si掺杂浓度为0.5-2*10^18cm-3,厚度为0.5μm；优选的Si的掺杂浓度为1*10^18cm-3；
所述量子阱探测器采用边耦合方式，及在所述的GaAs衬底的台面结构一侧打磨成45°，红外光线垂直于入射面入射。边耦合适用于单元或者线阵列器件，容易获得器件的响应率、探测率等参数，得到的性能参数较准确，可以作为标尺。
上述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的制备方法，包括步骤如下：
（1）在所述GaAs衬底上利用分子束外延方法依次制备生长出GaAs底接触层、GaAs/AlxGa1-xAs MQW多量子阱层
（2）在所述MQW多量子阱层上制备GaAs顶接触层；
（3）利用现有的刻蚀技术在上述制备的晶片上刻蚀到GaAs底接触层表面，形成台面结构；
（4）采用蒸镀方法，分别在GaAs顶接触层上制备上电极，在GaAs底接触层表面上制备下电极，并引出导线。
根据本发明优选的，所述台面结构的表面积为200μm×200μm。
在8-14μm长波段的宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的应用：
所述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器对红外辐射的探测是基于导带内子带间的光跃迁；当有外界红外辐射式，量子阱内子带间产生共振吸收，电子被激发到激发态，激发的电子隧穿出势垒形成热电子，引起材料电导变化，垂直于量子阱加偏压后则收集到红外辐射引起的热电流从而探测到外界的信息。不同于传统探测器在导带和价带间发生的Bloch态间的跃迁，GaAs/AlxGa1-xAs量子阱探测器对红外辐射的探测是基于导带内子带间的光跃迁。传统的GaAs/AlxGa1-xAs红外探测器为一种窄带器件，响应带宽窄，如果应用于整个8-14μm频带则工艺上很复杂，且窄带器件带来了某些频段信息的丢失，影响红外成像的成像质量，本发明设计的宽频带GaAs/AlxGa1-xAs红外探测器可以很好的解决这一问题。红外探测器不光在传统的红外夜视、红外制导等军事领域有着广泛的应用，近年来在医疗成像、安防检验、环境工业监测等民用领域也起到了主要作用。8-14μm的长波红外热成像仪波长较长，穿透雨、雾的能力较高因此也常用于恶劣气候条件，可以检测大气分布。由于抗辐射，特别适于天基红外探测及应用。
本发明的优点在于：
本发明其优点在于光谱响应截止频率处于8-14μm的大气窗口，通过调整量子阱的参数使得势垒以上形成分立的微带，跃迁到各微带上的光子形成的光谱彼此交叠使整体的光谱响应带宽增大，光谱响应带宽可以达到50%左右，无需复杂的量子阱探测器器件结构即可实现扩展响应光谱的目的，且制作工艺相当简单成熟，易于实现。具有光谱响应带宽宽，成像质量高，可响应长波长波段。
附图说明
图1是本发明宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的结构示意图；
在图1中，1、GaAs衬底；2、GaAs底接触层；3、势垒区AlxGa1-xAs层；4、势阱区GaAs层；5、GaAs顶接触层；6、制作在GaAs顶接触层5上的上电极；7、制作在腐蚀出的GaAs底接触层2上的下电极；α为所述的GaAs衬底的一侧的夹角。
具体实施方式
下面结合实施例和说明书附图对本发明做详细的说明，但不限于此。
实施例1、
如图1所示。
一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，包括由下而上顺次设置的GaAs衬底1、GaAs底接触层2，所述的GaAs底接触层2包括凸起的台形结构，在所述台形结构上顺次设置有多量子阱层MQW、GaAs顶接触层5和上电极6，在所述所述的GaAs底接触层上还设置有下电极7；所述的多量子阱层MQW为周期交替生长的AlxGa1-xAs层3和GaAs层4；
所述量子阱层MQW的交替生长周期为50；其中GaAs层4厚度为4.7nm，Si掺杂浓度为7*10^17cm-3；AlxGa1-xAs层3厚度为21nm，不掺杂，势垒高度由AlxGa1-xAs中的Al组分x决定，x的取值为0.29；
所述的GaAs底接触层2的Si掺杂浓度为1*10^18cm-3,厚度为1μm；
其中所述的GaAs顶接触层5的Si掺杂浓度为1*10^18cm-3,厚度为0.5μm；
所述量子阱探测器采用边耦合方式，及在所述的GaAs衬底1的一侧打磨成α=45°，红外光线垂直于入射面入射。仅对有台面结构一侧做磨角处理，边耦合适用于单元或者线阵列器件，容易获得器件的响应率、探测率等参数，得到的性能参数较准确，可以作为标尺。
实施例2、
如实施例1所述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的制备方法，包括步骤如下：
（1）在所述GaAs衬底1上利用分子束外延方法依次制备生长出GaAs底接触层2、GaAs/AlxGa1-xAs MQW多量子阱层
（2）在所述MQW多量子阱层上制备GaAs顶接触层5；
（3）利用现有的刻蚀技术在上述制备的晶片上刻蚀到GaAs底接触层2表面，形成台面结构；
（4）采用蒸镀方法，分别在GaAs顶接触层5上制备上电极6，在GaAs底接触层表面上制备下电极7，并引出导线。
所述台面结构的表面积为200μm×200μm。
实施例3、
如实施例1、2所述的宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，在8-14μm长波段的宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的应用：
所述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器对红外辐射的探测是基于导带内子带间的光跃迁；当有外界红外辐射式，量子阱内子带间产生共振吸收，电子被激发到激发态，激发的电子隧穿出势垒形成热电子，引起材料电导变化，垂直于量子阱加偏压后则收集到红外辐射引起的热电流从而探测到外界的信息。
Claims (9)
1.一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，其特征在于，该红外探测器包括由下而上顺次设置的GaAs衬底、GaAs底接触层，所述的GaAs底接触层包括凸起的台形结构，在所述台形结构上顺次设置有多量子阱层MQW、GaAs顶接触层和上电极，在所述所述的GaAs底接触层上还设置有下电极；所述的多量子阱层MQW为周期交替生长的AlxGa1-xAs层和GaAs层；
所述量子阱层MQW的交替生长周期为40-60，其中GaAs层厚度为4.7nm，Si掺杂浓度为0.6-1*10^18cm-3；AlxGa1-xAs层厚度为21nm，不掺杂，势垒高度由AlxGa1-xAs中的Al组分x决定，x的取值为0.29-0.31；
所述的GaAs底接触层的Si掺杂浓度为0.5-2*10^18cm-3,厚度为1μm；
其中所述的GaAs顶接触层的Si掺杂浓度为0.5-2*10^18cm-3,厚度为0.5μm。
2.如权利要求1所述一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，其特征在于，所述量子阱层MQW的交替生长周期为50。
3.如权利要求1所述一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，其特征在于，所述量子阱层MQW中GaAs层的Si掺杂浓度为7*10^17cm-3。
4.如权利要求1所述一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，其特征在于，所述AlxGa1-xAs层中的Al组分x，x的取值为0.29。
5.如权利要求1所述一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，其特征在于，所述的GaAs底接触层的Si掺杂浓度为1*10^18cm-3。
6.如权利要求1所述一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，其特征在于，其中所述的GaAs顶接触层的Si的掺杂浓度为1*10^18cm-3。
7.如权利要求1所述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的制备方法，包括步骤如下：
（1）在所述GaAs衬底上利用分子束外延方法依次制备生长出GaAs底接触层、GaAs/AlxGa1-xAs MQW多量子阱层
（2）在所述MQW多量子阱层上制备GaAs顶接触层；
（3）利用现有的刻蚀技术在上述制备的晶片上刻蚀到GaAs底接触层表面，形成台面结构；
（4）采用蒸镀方法，分别在GaAs顶接触层上制备上电极，在GaAs底接触层表面上制备下电极，并引出导线。
8.如权利要求7所述的宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的制备方法，其特征在于，所述台面结构的表面积为200*200μm。
9.如权利要求1所述一种宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器，在8-14μm长波段的宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器的应用：
所述宽频带长波响应的GaAs/AlxGa1-xAs量子阱红外探测器对红外辐射的探测是基于导带内子带间的光跃迁；当有外界红外辐射式，量子阱内子带间产生共振吸收，电子被激发到激发态，激发的电子隧穿出势垒形成热电子，引起材料电导变化，垂直于量子阱加偏压后则收集到红外辐射引起的热电流从而探测到外界的信息。
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