CN103488059A - Surface plasma functional structure device and nanolithography method for low-energy electrons - Google Patents
Surface plasma functional structure device and nanolithography method for low-energy electrons Download PDFInfo
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Abstract
The invention provides a surface plasma functional structure device and a nanolithography method for low-energy electrons. The nanolithography method comprises the following steps: step 1, preparing the surface plasma functional structure device containing a quartz prism, an Ag film, a photoelectric conversion material film, inductance coils, a metal electrode, a substrate and a photoresist film, and leading incident light to the surface of the surface plasma functional structure device to obtain the optical field distribution of a nano graph; step 2, preparing the photoelectric conversion material film on the surface of the surface plasma functional structure device, and converting the optical field of the required nano graph into the low-energy radiation electrons; step 3, preparing the photoresist film on the substrate; step 4, arranging an accelerating electric field and a focusing magnetic field between the photoelectric conversion material film and the photoresist film, leading the low-energy radiation electrons to pass through the vacuum space between the photoelectric conversion material film and the photoresist film so as to form an image on the surface of the photoresist film, and then obtaining a graph, consistent with the nano graph on the surface of the surface plasma functional structure device, of the nano photoresist film through development and photolithography.
Description
Technical field
The present invention relates to a kind of nano-photoetching method, relate in particular to the nano-photoetching method of a kind of surface plasma super-resolution imaging device and low-energy electron combination.
Background technology
Metal surface free electron and electromagnetic wave phase interaction, cause free electron that the concentrating type vibration occurs in metal surface, formed the electromagnetic wave of special shape, i.e. surface plasma.Surface plasma has the characteristic that surmounts the diffraction limit transmission.Based on this characteristic, development in recent years goes out the method that surface plasma local nano-photoetching, surface plasma nano interference lithography, super-resolution imaging photoetching etc. realize nano-photoetching.The advantage of the method is that resolving power breakthrough diffraction limit (approximately 1/2 wavelength), under long wavelength's exposure light source, as mercury lamp i line (365nm), g line (436nm) etc., obtains much smaller than wavelength, photolithography resolution nanoscale.
The technical barrier of the method is, realizes that the working distance of nanometer light field local, surface plasma interference, super-resolution imaging device is near field range.The device architecture bottom surface, i.e. nanometer optical field distribution surface, be limited in tens nanometers with interior scope apart from the surface of photoresist rete, controls difficulty very big.If adopt device bottom surface and the complete contact mode of photoresist rete, although guaranteed effective reach, will bring the series of problems such as damage, efficiency are low, alignment difficulties.
Summary of the invention
In view of this, the nanoimprinting technology development based on surface plasma, can effectively extend the technical method of device to photoresist rete surface operating distance in the urgent need to a kind of.The objective of the invention is the short problem of working distance for photolithographic structures devices such as existing surface plasma local, interference, imagings, the nano-photoetching method that a kind of surface plasma functional structure device surface is provided and is low-energy electron by the plasma conversion of surface plasma functional structure device surface.
For reaching described purpose, first aspect present invention, a kind of surface plasma functional structure device provided comprises: the substrate of quartz prism, metal A g rete, photoelectric conversion material rete, telefault, metal electrode, photoresist rete, photoresist rete; At the bottom surface of quartz prism hot evaporation layer of metal Ag rete, below metal A g rete, be provided with the photoelectric conversion material rete; Spin coating photoresist rete in the substrate of photoresist rete, the surface of the substrate of photoresist rete is parallel with the bottom surface of quartz prism, and the lower surface of the upper surface of photoresist rete and photoelectric conversion material rete has a distance; The substrate of photoresist rete be placed on metal electrode above; Metal electrode be positive electrode, metal A g rete as negative electrode, load DC voltage between the two; Telefault at the placed around focusing magnetic field of the substrate of photoresist rete and quartz prism; The space of telefault between the upper surface of the bottom surface of quartz prism and photoresist rete produces focusing magnetic field; The focusing magnetic field direction is perpendicular to the surface of photoresist rete; Incident light, from the both sides incident illumination of quartz prism, forms surface plasma nano interference fringe optical field distribution on the metal A g of quartz prism bottom surface rete, and the photoelectric conversion material rete is converted into the interference fringe light field to overflow electronics; Overflow electronics under additional accelerating field effect, obtain the surface acceleration perpendicular to the photoresist rete, under the focusing magnetic field effect, overflow electronics and focus on the surface of photoresist rete in spiral imaging moving mode; To the sensitization of photoresist rete, development, obtain cycle Nano-structure figure.
For reaching described purpose, second aspect present invention, the nano-photoetching method that to provide the plasma conversion of surface plasma functional structure device surface be low-energy electron, described method comprises that step is as follows:
Step S1: at first prepare surface plasma functional structure device, incident light, after surface plasma functional structure device, obtains the optical field distribution of nano graph on the surface of surface plasma functional structure device;
Step S2: prepare the photoelectric conversion material rete at surface plasma functional structure device surface, this photoelectric conversion material rete is converted to the low-energy radiation electronics by the light field of nano graph;
Step S3: prepare the photoresist rete in substrate;
Step S4: between photoelectric conversion material rete and photoresist rete, by additional accelerating field and focusing magnetic field, make the low-energy radiation electronics pass through the vacuum space between photoelectric conversion material rete and photoresist rete, then in the surperficial imaging of photoresist rete, then obtain the figure of the nano-photoetching adhesive film consistent with surface plasma functional structure device surface nano graph through the development photoetching process.
The present invention's advantage compared with the existing methods is: surface plasma functional structure device of the present invention and nano-photoetching method provide a kind of surface plasma super lens and photoelectric conversion material of utilizing, be converted to the low-energy electron radiation in optical illumination lower surface plasma imaging and photo field, under low-energy electron magnetic field and electric field action, realize the nanometer resolution photoetching.The invention solves the short problem of working distance of the photolithographic structures devices such as prior art surface plasma local, interference, imaging, what a kind of novelty was provided can effectively extend the nano-photoetching method of device to the surperficial operating distance of photoresist rete.The relative optical wavelength of the present invention, electron wavelength is very short, reaches below 1nm.Therefore the operating distance of electronics is long, and in conjunction with accelerating field and focusing magnetic field, the surface from surface plasma photoetching device bottom surface apart from the photoresist rete, more than its operating distance can extend to 1 μ m.
The accompanying drawing explanation
Fig. 1 is that the present invention is converted to surface plasma the process flow diagram of the nano-photoetching method of low-energy electron;
Fig. 2 is that surface plasma functional structure device of the present invention is the embodiment 1 that can realize the prism metallic film structure of surface plasma wave interference, and the photolithographic structures diagram of surface plasma functional structure device is shown;
Fig. 3 is the embodiment 2 that surface plasma functional structure device of the present invention is realized the multiple layer metal dielectric film structure of super-resolution imaging, and the photolithographic structures figure of surface plasma functional structure device is shown.
Embodiment
Introduce in detail the present invention below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, protection scope of the present invention should comprise the full content of claim, and can realize the full content of the claims in the present invention by following examples to the technician in field.
Fig. 1 is that the present invention is converted to the surface plasma of surface plasma functional structure device the process flow diagram of the nano-photoetching method of low-energy electron, and photoetching realizes that approach comprises:
Step S1: at first prepare surface plasma functional structure device, incident light, after surface plasma functional structure device, obtains the optical field distribution of nano graph on the surface of surface plasma functional structure device;
Step S2: prepare photoelectric conversion material rete 4 at surface plasma functional structure device surface, this photoelectric conversion material rete 4 is converted to the low-energy radiation electronics by the light field of nano graph;
Step S3: prepare photoresist rete 8 in substrate 7;
Step S4: accelerating field and the focusing magnetic field of input between photoelectric conversion material rete 4 and photoresist rete 8, make the low-energy radiation electronics pass through the vacuum space between photoelectric conversion material rete 4 and photoresist rete 8, then in the surperficial imaging of photoresist rete 8, then obtain the figure of the nano-photoetching adhesive film 8 consistent with surface plasma functional structure device surface nano graph through the development photoetching process.
Described surface plasma functional structure device is the device that can realize the multiple layer metal dielectric film structure of super-resolution imaging; Or can realize the device of the prism metallic film structure that surface plasma wave is interfered; Or the device of the micro-point of the metal that can realize the luminous energy local, probe, nano metal aperture, gap structure.
The optical field distribution of described nano graph is by visible illumination mask graph or ultraviolet illumination mask graph, in the multiple layer metal dielectric film structure image planes of super-resolution imaging, obtains nanometer light field graphical distribution; Or, by one of them of visible ray or the micro-point of ultraviolet illumination metal, probe, nano metal aperture, gap structure, obtain the some distribution pattern that the nanoscale light field assembles, one of them of line distribution pattern; Or, by visible ray or ultraviolet illumination prism structure, at the metallic film upper surface plasma of prism bottom surface, interfere the interference optical field figure obtained.
The optical wavelength of described light field is mercury lamp i line (the i line represents wavelength 365nm), mercury lamp g line (the g line represents wavelength 436nm); Or 248nm ultraviolet photolithographic optical source wavelength, 193nm ultraviolet photolithographic optical source wavelength; Or the laser source wavelength of visible light frequency band.
The material of described photoelectric conversion material rete 4 is a kind of in metal photoelectric material, metallic compound photoelectric material, complex metal compound photoelectric material, and the electronics that requires photoelectric conversion material overflows merit and be less than the illumination photons energy, electronics overflows difference between merit and illumination photons energy in 1eV simultaneously.
The material of described photoresist rete 8 is electron beam resist.
The direction 9,10 of described accelerating field and focusing magnetic field is all perpendicular to photoresist rete 8 surfaces, in the image planes of the multiple layer metal dielectric film structure devices of super-resolution imaging and the space between photoresist rete 8, the Electric and magnetic fields nonunf ormity is less than 5%, the accelerating potential that the surface of the electronics overflowed in photoelectric conversion material rete 4 from image planes to photoresist rete 8 obtains is poor is less than 500 volts, focusing magnetic field is produced by permanent magnet or telefault 5, focusing magnetic field intensity is less than 3T, and T is focusing magnetic field volume unit tesla.
Surface plasma functional structure device as shown in Figure 2, the substrate 7 of quartz prism 2, metal A g rete 3, photoelectric conversion material rete 4, telefault 5, metal electrode 6, photoresist rete, photoresist rete 8; At the bottom surface of quartz prism 2 hot evaporation layer of metal Ag rete 3, below metal A g rete 3, be provided with photoelectric conversion material rete 4; Spin coating photoresist rete 8 in the substrate 7 of photoresist rete, the surface of the substrate 7 of photoresist rete is parallel with the bottom surface of quartz prism 2, and the lower surface of the upper surface of photoresist rete 8 and photoelectric conversion material rete 4 has a distance; The substrate 7 of photoresist rete be placed on metal electrode 6 above; Metal electrode 6 be positive electrode, metal A g rete 3 as negative electrode, load DC voltage between the two; Telefault 5 at the placed around focusing magnetic field of the substrate 7 of photoresist rete and quartz prism 2; The space of telefault 5 between the upper surface of the bottom surface of quartz prism 2 and photoresist rete 8 produces focusing magnetic field; Focusing magnetic field direction 10 is perpendicular to the surface of photoresist rete 8; Incident light 1, from the both sides incident illumination of quartz prism 2, forms surface plasma nano interference fringe optical field distribution on the metal A g rete 3 of quartz prism 2 bottom surfaces, and photoelectric conversion material rete 4 is converted into the interference fringe light field to overflow electronics; Overflow electronics under additional accelerating field effect, obtain the surface acceleration perpendicular to photoresist rete 8, under the focusing magnetic field effect, overflow electronics and focus on the surface of photoresist rete 8 in spiral imaging moving mode; Photoresist rete 8, after sensitization, is developed with developer solution, obtains cycle Nano-structure figure.
The embodiment 1 of surface plasma functional structure device, surface plasma functional structure device is the prism metallic film structure that can realize that surface plasma wave is interfered, the photolithographic structures schematic diagram of surface plasma functional structure device is as shown in Figure 2.In figure: 1 means incident light; 2 mean quartz prism; 3 mean metal A g rete; 4 mean the photoelectric conversion material rete; 5 mean telefault; 6 mean metal electrode; 7 mean the substrate of photoresist rete; 8 mean the photoresist rete; 9 mean direction of an electric field; 10 mean magnetic direction.Photoresist rete 8 is used the mr-EBL6000.1 photoresist.Mr-EBL6000.1 means a kind of electron beam resist.
(1) at the bottom surface of quartz prism 2 hot evaporation layer of metal Ag rete 3, its thickness is 40nm, below metal A g rete 3, adopt magnetron sputtering method to prepare photoelectric conversion material rete 4, described photoelectric conversion material rete 4 is photoelectric conversion material cesium iodide rete, thickness 50nm.
(2) spin coating photoresist rete 8 in the substrate 7 of the photoresist rete of thick 1mm, the surface of the substrate 7 of photoresist rete is parallel with the bottom surface of quartz prism 2, the upper surface of photoresist rete 8 is 5 μ m apart from the lower surface of photoelectric conversion material rete 4, and quartz is selected in the substrate 7 of described photoresist rete.
(3) material that loads the metal electrode 6 of accelerating field be golden, and thickness is 50nm, spin coating have the substrate 7 of photoresist rete be placed on metal electrode 6 above.
(4) metal electrode 6 be positive electrode, metal A g rete 3 as negative electrode, load the DC voltage of 100V between the two.
(5) introduce the telefault 5 of focusing magnetic field around the substrate 7 of photoresist rete and quartz prism 2, the space of telefault 5 between the upper surface of the bottom surface of quartz prism 2 and photoresist rete 8 produces focusing magnetic field, the intensity of focusing magnetic field is 2T, and focusing magnetic field direction 10 is perpendicular to the surface of photoresist rete 8.
(6) laser that incident light 1 is the 442nm wavelength, from the both sides incident illumination of quartz prism 2, forms surface plasma nano interference fringe optical field distribution on the metal A g rete 3 of quartz prism 2 bottom surfaces.Photoelectric conversion material rete 4 is converted into the interference fringe light field to overflow electronics.
(7) overflow electronics under additional accelerating field effect, obtain the surface acceleration perpendicular to photoresist rete 8, its direction of an electric field 9 illustrates as Fig. 2.Under the focusing magnetic field effect, electronics focuses on the surface of photoresist rete 8 in spiral imaging moving mode.Photoresist rete 8, after sensitization, is developed with developer solution, obtains cycle Nano-structure figure; Described developer solution is used the mr-Dev600 developer solution, and mr-Dev600 means to use the title of developer solution.
The embodiment 2 of surface plasma functional structure device, surface plasma functional structure device is the multiple layer metal dielectric film structure that can realize super-resolution imaging, the photolithographic structures schematic diagram of surface plasma functional structure device is as shown in Figure 3.In figure: 1 means incident light; 2a means the mask graph substrate; 3a means the metal mask figure; 4 mean the photoelectric conversion material rete; 5 mean telefault; 6 mean metal electrode; 7 mean the substrate of photoresist rete; 8 mean the photoresist rete; 9 mean direction of an electric field; 10 mean magnetic direction; 11 mean the metallic diaphragm of multilayer film; 12 mean the media coating in multilayer film.
(1) mask graph substrate 2a is quartz substrate, and the material of the metal mask figure 3a of use is Cr, and the thickness of mask is 40nm, cycle 100nm, live width 50nm; Mask graph substrate 2a below is Ag and the SiO prepared by magnetically controlled sputter method
2the curved surface multilayer film, the thick about 20nm of every tunic; Below multilayer film, adopt magnetron sputtering method to prepare photoelectric conversion material rete 4, described photoelectric conversion material rete 4 is photoelectric conversion material cesium iodide retes, thickness 50nm again.Multilayer film is comprised of metallic diaphragm 11 and media coating 12.
(2) spin coating photoresist in the substrate 7 of the photoresist rete of thick 1mm, obtain photoresist rete 8, and substrate 7 surfaces of photoresist rete are parallel with mask pattern substrate 2a, and the upper surface of photoresist rete 8 is 5 μ m apart from the lower surface of photoelectric conversion material rete 4.Described photoresist title is mr-EBL6000.1.
(3) material of the metal electrode 6 of loading accelerating field is gold, and thickness is 50nm, and spin coating has the substrate 7 of photoresist rete to be placed on above metal electrode 6.
(4) metal electrode 6 be positive electrode, metal A g rete as negative electrode, load the DC voltage of 100V between the two.
(5) introduce the telefault 5 of focusing magnetic field on every side at substrate 7 and the multilayer film of photoresist rete, the focusing magnetic field that the space of telefault 5 between multi-layer film structure lower surface and photoresist rete 8 upper surfaces produces, focusing magnetic field intensity be 2T, focusing magnetic field direction 10 is perpendicular to the surface of photoresist rete 8.
(6) laser that incident light 1 is the 442nm wavelength is from the illumination of mask substrate 2a normal incidence, and multilayer film dwindles into picture by metal mask figure 3a, dwindles into the picture light field and produces at the intersection of multilayer film and photoelectric conversion material 4.Photoelectric conversion material rete 4 will dwindle into as light field and be converted into and overflow electronics.
(7) overflow electronics under additional accelerating field effect, obtain the surface acceleration perpendicular to photoresist rete 8, its direction of an electric field 9 illustrates as Fig. 2.Under the focusing magnetic field effect, electronics focuses on the surface of photoresist rete 8 in spiral imaging moving mode.Photoresist rete 8, after sensitization, is developed with developer solution, obtains cycle Nano-structure figure.Described developer solution adopts the mr-Dev600 developer solution.
The not detailed disclosed part of the present invention belongs to the known technology of this area.
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; can understand conversion or the replacement expected, all should be encompassed in of the present invention comprise scope within.
Claims (10)
1. a surface plasma functional structure device, is characterized in that comprising: the substrate of quartz prism, metal A g rete, photoelectric conversion material rete, telefault, metal electrode, photoresist rete, photoresist rete; At the bottom surface of quartz prism hot evaporation layer of metal Ag rete, below metal A g rete, be provided with the photoelectric conversion material rete; Spin coating photoresist rete in the substrate of photoresist rete, the surface of the substrate of photoresist rete is parallel with the bottom surface of quartz prism, and the lower surface of the upper surface of photoresist rete and photoelectric conversion material rete has a distance; The substrate of photoresist rete be placed on metal electrode above; Metal electrode be positive electrode, metal A g rete as negative electrode, load DC voltage between the two; Telefault at the placed around focusing magnetic field of the substrate of photoresist rete and quartz prism; The space of telefault between the upper surface of the bottom surface of quartz prism and photoresist rete produces focusing magnetic field; The focusing magnetic field direction is perpendicular to the surface of photoresist rete; Incident light is from the both sides incident illumination of quartz prism, form surface plasma nano interference fringe optical field distribution on the metal A g of quartz prism bottom surface rete, the photoelectric conversion material rete is converted into the interference fringe light field to overflow electronics, overflow electronics under additional accelerating field effect, acquisition is perpendicular to the surface acceleration of photoresist rete, under the focusing magnetic field effect, overflow electronics and focus on the surface of photoresist rete in spiral imaging moving mode; The photoresist rete, in sensitization, development, is obtained to cycle Nano-structure figure.
2. surface plasma functional structure device as claimed in claim 1, it is characterized in that: described metal A g rete is as negative electrode, and metal A g thicknesses of layers is 40nm; Described metal electrode is positive electrode, and the material of metal electrode is gold, and thickness is 50nm, loads the DC voltage of 100V between described metal electrode and metal A g rete.
3. surface plasma functional structure device as claimed in claim 1, it is characterized in that: the upper surface of described photoresist rete is 5 μ m apart from the lower surface of photoelectric conversion material rete; The photoresist rete is used mr-EBL6000.1 photoresist rete; Described photoelectric conversion material rete is photoelectric conversion material cesium iodide rete, thickness 50nm.
4. the nano-photoetching method that is low-energy electron by the plasma conversion of the described surface plasma functional structure of claim 1 device surface is characterized in that following photoetching realizes approach:
Step S1: at first prepare surface plasma functional structure device, incident light, after surface plasma functional structure device, obtains the optical field distribution of nano graph on the surface of surface plasma functional structure device;
Step S2: prepare the photoelectric conversion material rete at surface plasma functional structure device surface, this photoelectric conversion material rete is converted to the low-energy radiation electronics by the light field of nano graph;
Step S3: prepare the photoresist rete in substrate;
Step S4: between photoelectric conversion material rete and photoresist rete, by additional accelerating field and focusing magnetic field, make the low-energy radiation electronics pass through the vacuum space between photoelectric conversion material rete and photoresist rete, then in the surperficial imaging of photoresist rete, then obtain the figure of the nano-photoetching adhesive film consistent with surface plasma functional structure device surface nano graph through the development photoetching process.
5. nano-photoetching method according to claim 4, it is characterized in that: described surface plasma functional structure device is the multiple layer metal dielectric film structure devices that can realize super-resolution imaging; Or can realize the prism metallic film structure devices that surface plasma wave is interfered; Or the micro-point of the metal that can realize the luminous energy local, probe, nano metal aperture, gap structure device.
6. nano-photoetching method according to claim 4, it is characterized in that: the optical field distribution of described nano graph is by visible illumination mask graph or ultraviolet illumination mask graph, in the multiple layer metal dielectric film structure image planes of super-resolution imaging, obtains nanometer light field graphical distribution; Or, by one of them of visible ray or the micro-point of ultraviolet illumination metal, probe, nano metal aperture, gap structure, obtain the some distribution pattern that the nanoscale light field assembles, one of them of line distribution pattern; Or, by visible ray or ultraviolet illumination prism structure, at the metallic film upper surface plasma of prism bottom surface, interfere the interference optical field figure obtained.
7. nano-photoetching method according to claim 4, it is characterized in that: the optical wavelength of described light field is mercury lamp i line, mercury lamp g line; Or 248nm, 193nm ultraviolet photolithographic optical source wavelength; Or the laser source wavelength of visible light frequency band.
8. nano-photoetching method according to claim 4, it is characterized in that: the material of described photoelectric conversion material rete is a kind of in metal photoelectric material, metallic compound photoelectric material, complex metal compound photoelectric material, and the electronics that requires photoelectric conversion material overflows merit and be less than the illumination photons energy, electronics overflows difference between merit and illumination photons energy in 1eV simultaneously.
9. nano-photoetching method according to claim 4, it is characterized in that: described photoresist film layer material is electron beam resist.
10. nano-photoetching method according to claim 4, it is characterized in that: the direction of described accelerating field and focusing magnetic field is all perpendicular to photoresist rete surface, in the multiple layer metal dielectric film structure devices image planes of super-resolution imaging and the space between the photoresist rete, the Electric and magnetic fields nonunf ormity is less than 5%, the accelerating potential that the surface of the electronics overflowed in the photoelectric conversion material rete from image planes to the photoresist rete obtains is poor is less than 500 volts, focusing magnetic field is produced by permanent magnet or telefault, focusing magnetic field intensity is less than 3T, T is focusing magnetic field volume unit tesla.
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