CN103474341A - Method for performing high-temperature mixed acid corrosion on LED chip scribe lines - Google Patents
Method for performing high-temperature mixed acid corrosion on LED chip scribe lines Download PDFInfo
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- CN103474341A CN103474341A CN2013104141451A CN201310414145A CN103474341A CN 103474341 A CN103474341 A CN 103474341A CN 2013104141451 A CN2013104141451 A CN 2013104141451A CN 201310414145 A CN201310414145 A CN 201310414145A CN 103474341 A CN103474341 A CN 103474341A
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Abstract
The invention discloses a method for performing high-temperature mixed aid corrosion on LED chip scriber lines. Firstly, while ultrasonic cleaning is performed on a COW finished product with acetone and isopropyl alcohol, residual chemical impurities are removed with clean water, then high-temperature baking is performed on a COW, high-compactness SiO2 is deposited on the surface of the COW, then frontal scribing is performed through lasers according to the scribe lines among surface core particles of the COW, concentrated sulfuric acid and strong phosphoric acid are mixed at the ratio of 1:4 and heated to 245-255 DEG C, the COW after the frontal scribing is placed in the mixed acid to be corroded for 10 minutes and then taken out, the SiO2 on the surface of the COW after the high-temperature acid corrosion is cleaned through BOE in a wet etching mode, then cleaving is performed, and operation is performed according to normal LED chip processes. The method has the advantages of being easy and practicable in operation, not only meeting the normal technological processes of an LED chip, but also being capable of removing light absorption products generated after the front scribing is performed on the COW through the lasers, so that the brightness of the core particles of the COW is not damaged.
Description
Technical field
The present invention relates to field of photoelectric technology, especially a kind of method of LED chip high temperature nitration mixture corrosion Cutting Road.
Background technology
Along with the important breakthrough of GaN base wide-bandgap semiconductor crystal technique of heap of stone, the LED of blue light and green glow is as energy-conservation, environmental protection, and the high life new energy-saving material has caused the extensive concern of industry.During current traditional high-power LED chip cutting, need carry out high-energy on its surface with radium-shine, the burning of high depth; In its cutting process, to the damage on core grain surface and burn product, when LED chip is luminous, ABSORPTION AND SCATTERING is to the luminous energy of sidewall; Fail the drawback of the above-mentioned cutting of a kind of adequate solution and extinction in existing LED chip fabrication processing.
Therefore, need a kind of new technical scheme to address the above problem.
Summary of the invention
Goal of the invention: the problem produced in order to solve prior art, the invention provides a kind of simplely, can effectively remove radium-shine method of just drawing the LED chip high temperature nitration mixture corrosion Cutting Road that produces the extinction product after COW.
Technical scheme: for achieving the above object, the present invention can adopt following technical scheme:
A kind of method of LED chip high temperature nitration mixture corrosion Cutting Road comprises the following steps:
(1) by COW acetone, isopropyl alcohol ultrasonic cleaning 10min, clear water is spin-dried for after rinsing 5min, and in baking box 120 ℃ of baking 10min;
(2) at the fine and close SiO of the height of COW surface deposition 1 μ m
2as mask;
(3) according to the Cutting Road between COW Surface Core grain, with radium-shine, on its surface, cut, the width of laser facula is 8 μ m～10 μ m, drawing dark is 35 μ m～40 μ m;
(4) after the concentrated sulfuric acid and SPA are mixed, nitration mixture is heated to specified temp;
(5) COW after radium-shine cutting is positioned in nitration mixture with acid resistance pottery hand basket, places 10min and take out;
(6) SiO by the product surface after the high-temperature acid corrosion with BOE
2wet etching is clean;
(7) above-mentioned finished product is ground to 100 μ m, and the back of the body just can be according to the operation of normal LED chip flow process, until the square piece warehouse-in after splitting.
Further, in described step (4), the concentrated sulfuric acid and SPA are prepared by the volume ratio of 1:5～1:8.
Further, in described step (4), heating-up temperature is 245 ℃～255 ℃.
Beneficial effect: a kind of method that the invention discloses LED chip high temperature nitration mixture corrosion Cutting Road, at first by COW finished product acetone, the isopropyl alcohol ultrasonic cleaning is clean, to remove remaining chemical impurity with clear water simultaneously, then COW is carried out to high-temperature baking, subsequently at COW surface deposition high compactness SiO
2then according to the Cutting Road between COW Surface Core grain, carry out front cutting with radium-shine, the concentrated sulfuric acid and SPA are mixed with the 1:4 ratio simultaneously, and after being heated to 245 ℃～255 ℃, COW after just drawing is positioned in nitration mixture after being corroded 10min and takes out, finally the SiO by the COW surface after the high-temperature acid corrosion with BOE
2after wet etching is clean, carries out splitting, and carry out operation by normal LED chip flow process; This technique has that operation is simple and feasible, has both met the normal process flow of LED chip, can remove again radium-shinely just drawing the extinction product produced after COW, thereby the core grain brightness of COW is not incurred loss.
Embodiment
Below in conjunction with embodiment, further illustrate the present invention, should understand following embodiment only is not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Embodiment 1:
A kind of method of LED chip high temperature nitration mixture corrosion Cutting Road comprises the following steps:
(1) by COW acetone, isopropyl alcohol ultrasonic cleaning 10min, clear water is spin-dried for after rinsing 5min, and in baking box 120 ℃ of baking 10min;
(2) at the fine and close SiO of the height of COW surface deposition 1 μ m
2as mask;
(3) according to the Cutting Road between COW Surface Core grain, with radium-shine, on its surface, cut, the width of laser facula is 8 μ m, drawing dark is 35 μ m;
(4) concentrated sulfuric acid and SPA are prepared by the volume ratio of 1:5, after mixing, nitration mixture is heated to 245 ℃;
(5) COW after radium-shine cutting is positioned in nitration mixture with acid resistance pottery hand basket, places 10min and take out;
(6) SiO by the product surface after the high-temperature acid corrosion with BOE
2wet etching is clean;
(7) above-mentioned finished product is ground to 100 μ m, and the back of the body just can be according to the operation of normal LED chip flow process, until the square piece warehouse-in after splitting.
Embodiment 2:
A kind of method of LED chip high temperature nitration mixture corrosion Cutting Road comprises the following steps:
(1) by COW acetone, isopropyl alcohol ultrasonic cleaning 10min, clear water is spin-dried for after rinsing 5min, and in baking box 120 ℃ of baking 10min;
(2) at the fine and close SiO of the height of COW surface deposition 1 μ m
2as mask;
(3) according to the Cutting Road between COW Surface Core grain, with radium-shine, on its surface, cut, the width of laser facula is 10 μ m, drawing dark is 40 μ m;
(4) concentrated sulfuric acid and SPA are prepared by the volume ratio of 1:8, after mixing, nitration mixture is heated to 255 ℃;
(5) COW after radium-shine cutting is positioned in nitration mixture with acid resistance pottery hand basket, places 10min and take out;
(6) SiO by the product surface after the high-temperature acid corrosion with BOE
2wet etching is clean;
(7) above-mentioned finished product is ground to 100 μ m, and the back of the body just can be according to the operation of normal LED chip flow process, until the square piece warehouse-in after splitting.
Embodiment 3:
A kind of method of LED chip high temperature nitration mixture corrosion Cutting Road comprises the following steps:
(1) by COW acetone, isopropyl alcohol ultrasonic cleaning 10min, clear water is spin-dried for after rinsing 5min, and in baking box 120 ℃ of baking 10min;
(2) at the fine and close SiO of the height of COW surface deposition 1 μ m
2as mask;
(3) according to the Cutting Road between COW Surface Core grain, with radium-shine, on its surface, cut, the width of laser facula is 8 μ m, drawing dark is 38 μ m;
(4) concentrated sulfuric acid and SPA are prepared by the volume ratio of 1:6, after mixing, nitration mixture is heated to 250 ℃;
(5) COW after radium-shine cutting is positioned in nitration mixture with acid resistance pottery hand basket, places 10min and take out;
(6) SiO by the product surface after the high-temperature acid corrosion with BOE
2wet etching is clean;
(7) above-mentioned finished product is ground to 100 μ m, and the back of the body just can be according to the operation of normal LED chip flow process, until the square piece warehouse-in after splitting.
Claims (3)
1. the method for LED chip high temperature nitration mixture corrosion Cutting Road is characterized in that comprising the following steps:
(1) by COW acetone, isopropyl alcohol ultrasonic cleaning 10min, clear water is spin-dried for after rinsing 5min, and in baking box 120 ℃ of baking 10min;
(2) at the fine and close SiO of the height of COW surface deposition 1 μ m
2as mask;
(3) according to the Cutting Road between COW Surface Core grain, with radium-shine, on its surface, cut, the width of laser facula is 8 μ m～10 μ m, drawing dark is 35 μ m～40 μ m;
(4) after the concentrated sulfuric acid and SPA are mixed, nitration mixture is heated to specified temp;
(5) COW after radium-shine cutting is positioned in nitration mixture with acid resistance pottery hand basket, places 10min and take out;
(6) SiO by the product surface after the high-temperature acid corrosion with BOE
2wet etching is clean;
(7) above-mentioned finished product is ground to 100 μ m, and the back of the body just can be according to the operation of normal LED chip flow process, until the square piece warehouse-in after splitting.
2. the method that a kind of LED chip high temperature nitration mixture according to claim 1 corrodes Cutting Road is characterized in that: in described step (4), the concentrated sulfuric acid and SPA are prepared by the volume ratio of 1:5～1:8.
3. the method that a kind of LED chip high temperature nitration mixture according to claim 1 corrodes Cutting Road is characterized in that: in described step (4), heating-up temperature is 245 ℃～255 ℃.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037278A (en) * | 2014-06-27 | 2014-09-10 | 圆融光电科技有限公司 | Method for manufacturing LED chip and LED chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100314633A1 (en) * | 2009-06-10 | 2010-12-16 | Matthew Donofrio | Front end scribing of light emitting diode (led) wafers and resulting devices |
| CN101944557A (en) * | 2009-07-10 | 2011-01-12 | 东莞市福地电子材料有限公司 | High-order side corrosion method for side of high-power gallium nitride based chip |
| CN102142397A (en) * | 2010-01-28 | 2011-08-03 | 晶元光电股份有限公司 | Light-emitting diode (LED) and method for manufacturing same |
| CN103094437A (en) * | 2013-01-31 | 2013-05-08 | 马鞍山圆融光电科技有限公司 | Manufacturing method of high-power light-emitting diode (LED) chips |
-
2013
- 2013-09-12 CN CN2013104141451A patent/CN103474341A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100314633A1 (en) * | 2009-06-10 | 2010-12-16 | Matthew Donofrio | Front end scribing of light emitting diode (led) wafers and resulting devices |
| CN101944557A (en) * | 2009-07-10 | 2011-01-12 | 东莞市福地电子材料有限公司 | High-order side corrosion method for side of high-power gallium nitride based chip |
| CN102142397A (en) * | 2010-01-28 | 2011-08-03 | 晶元光电股份有限公司 | Light-emitting diode (LED) and method for manufacturing same |
| CN103094437A (en) * | 2013-01-31 | 2013-05-08 | 马鞍山圆融光电科技有限公司 | Manufacturing method of high-power light-emitting diode (LED) chips |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037278A (en) * | 2014-06-27 | 2014-09-10 | 圆融光电科技有限公司 | Method for manufacturing LED chip and LED chip |
| CN104037278B (en) * | 2014-06-27 | 2017-01-18 | 圆融光电科技有限公司 | Method for manufacturing LED chip and LED chip |
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Application publication date: 20131225 |