CN103460308B - Resistive voltage divider made of a resistive film material on an insulating substrate - Google Patents
Resistive voltage divider made of a resistive film material on an insulating substrate Download PDFInfo
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- CN103460308B CN103460308B CN201280010237.7A CN201280010237A CN103460308B CN 103460308 B CN103460308 B CN 103460308B CN 201280010237 A CN201280010237 A CN 201280010237A CN 103460308 B CN103460308 B CN 103460308B
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- 239000000463 material Substances 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 description 29
- 230000000694 effects Effects 0.000 description 18
- 230000005611 electricity Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- HHXYJYBYNZMZKX-UHFFFAOYSA-N 3,4:15,16-diepoxy-7-oxo-13(16),14-clerodadien-20,12-olide-(3alpha,4alpha)-form Natural products C12CCC3C4(C)CCCC(C)(C)C4CCC3(C)C1(C)CCC1C2(C)CCC1C(=C)C HHXYJYBYNZMZKX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- -1 ruthenic oxide Chemical compound 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C13/00—Resistors not provided for elsewhere
- H01C13/02—Structural combinations of resistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/04—Voltage dividers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
Abstract
A resistive voltage divider comprises at least a first (4) and a second (5) resistor, which are electrically connected in series and are made of a resistive film material (1) which is applied in form of a trace onto an insulating substrate (2). The divider's voltage ratio has a value between ten and one million. In order to improve the accuracy of the voltage divider, the at least first (4) and second (5) resistors are made of the same resistive film material (1), have a trace length above a corresponding specific trace length and have approximately the same trace width.
Description
Technical field
The present invention relates to resitstance voltage divider, which includes at least the first and second resistors, first and second resistor string
Connection is electrically connected and is made up of the resistive film material being applied in the form of trace on an insulating substrate, and the wherein potentiometer
Voltage ratio with the value between ten and 1,000,000.The potentiometer is may be present in its simplest form：Only two strings
Connection resistor, one with high resistance and another has low-resistance value.In the case of more advanced, the resistor of series connection
In one or two can by with corresponding equivalent resistance resistor network substitute.These resistors or corresponding electricity
Resistance device network can also be called height and low-ohm resistors below respectively.
Background technology
It is known by making such as metal film or metal forming（Such as nickel chromium triangle, metal ceramics thin film（For example tantalum nitride, ruthenic oxide,
Bismuth ruthenate, carbon film）, or based on glass and the composite material film of ceramic metal mixture）Uninsulated resistive film or foil material
The different technologies of resistor are manufactured in dielectric substrate.In the rare cases, resistive film material can be by with above-mentioned
The multilamellar composition of the material of different names.Dielectric substrate can generally be ceramics, silicon, glass or some other synthetic materials,
And the membrane material can be by as sputtered（Thin film）, silk screen and screen painting（Thick film）Or directly printing by nozzle（It is thick
Film）Method and be applied to substrate.The dielectric substrate can have a form of flat planar chip or cylinder, and correspondingly, electricity
Resistance film is deposited on the plane surface of two dimension or on Three-dimensional Axisymmetric surface.In potentiometer, high and low-ohm resistors are all
On identical substrate.In addition, the high connductivity structure of the much lower resistivity of membrane material with ratio resistance device also is deposited upon
On substrate.The high connductivity structure is intended to serve as contact terminal, and they are using resistive film material and their parts of resistor
Overlap such mode and be placed on substrate.
In order to realize the voltage ratio significantly beyond, and while reducing the size of potentiometer, it is known that by high ohm electricity
The resistive film material of resistance device is arranged to long and narrow trace, and the wherein trace shape is similar to sinuous form.The shape that term wriggles
Formula means that the trace is not straight line just and mode bends as being utilized in realizing long length on little substrate area.
Sinuous form can for example look like square wave, triangular wave, sine wave, zigzag or（Under three-dimensional situation）Spiral type.This is for example
Described in the US 5,521,576 for thick-film resistor and 7,079,004 B2 of US for thin film AC potentiometer.Such as
Also there disclosed, the low-resistance value of low-ohm resistors is generally by using short and wide trace arrangement resistive film material
Obtain.
Typically, above-described resitstance voltage divider can be used for the voltage level of wide scope, from as little as to high-voltage applications.
Although the present invention comes from generally can be suitably used between 3.6kV and 36kV of the KEVCD and KEVA sensor types of such as ABB
The field of the middle pressure sensor of voltage range, the application of the present invention are not limited to the voltage range.
For major applications, it can be ensured that a certain high accuracy and initial precision of potentiometer ratio can be in the temperature of change
Maintain in degree and/or long duration, this is desirable.However, different aging effects resistor in resistance value and potentiometer
Both temperatures coefficient in cause drift, which causes precision to run down.In US 5, in 521,576, describe for thick film electricity
Resistance device, the stable operation characteristic of resistor can be directly printed onto substrate using continuous mode by the resistance composition by resistive conductor
Above guarantee at desired resistance value, wherein the resistive conductor has such length：Which is at least more ten times greater than the width of line.
Inventor had realized that for potentiometer, needs stable each resistor resistance value of itself not have not so
It is many.On the contrary, it is often more important that the initial resistivity value for guaranteeing resistor is accurate and the behaviour of both high and low-ohm resistors
Make characteristic drift all occur in a same direction and with may identical amount so that resistance value ratio and thus divide
The voltage ratio of depressor is maintained at its initial value in whole operation temperature or in long period.
Correspondingly, it is an object of the present invention to provide resitstance voltage divider described above, which is with the raising of its voltage ratio
Precision and temperature stability and long-time stability be characterized.
The content of the invention
As has been proposed, the target is by making the drift characteristic of height and low-ohm resistors in potentiometer as far as possible
With and realize.For the first important step of the matching be to potentiometer in all resistors use identical resistance membrane material
Material.In case of composite, it means that for example not only use the complex of identical type but also using with almost phase
With the same compound thing of resistivity.
Secondly, understanding as much as possible affects the effect of initial resistivity value or drift characteristic and using these effects can
Mode as occurring in all resistors in energy identical degree designs height and low-ohm resistors, and this is desirable.
One important effect is so-called interfacial effect, and which is related to the interface between contact terminal and the resistive film material of resistor
The electric counterdiffusion that place occurs.Therefore, the resistance value of similar resistor per unit length, temperature coefficient and long-time stability is important
Parameter changes with the length of its electrical resistance track, changes especially when trace is much longer unlike diffusion zone.Have ten
More than high pressure ratio resitstance voltage divider in, the trace that the trace length of high-ohmic resistor is considerably longer than low-ohm resistors is long
Degree, this cause two resistors and therefore voltage ratio the mismatch error that can not ignore.As trace length increases, interface effect
Reply electrical resistance property has less and less impact.Inventor is it has already been indicated that for conventional resistive film material, interfacial effect exists
More than particular trace length can be ignored, wherein particular trace length typically with the value between to ten millimeter, this
Depending on specific electrical resistance membrane material and the manufacturing technology of resistor.It is that is, more than particular trace length, high and especially
The resistance value and drift parameter of low-ohm resistors is substantially ensured that, and therefore ensures that predetermined potentiometer ratio.By selecting
Appropriate resistive film material and manufacturing technology, make particular trace length be maintained at below suitable value for each particular design,
This is possible.For example, about two millimeters of particular trace length is possible, thus allows the compact design of potentiometer.
Another effect influential on resistance value is the so-called edge effect occurred at the transverse edge of trace.When
During the cross section of viewing typical trace, the transverse edge of trace is not usually straight and is cut suddenly, but towards its outer end
It is gradually reduced.In the marginal zone of trace, the composition and/or structure of resistive film material may be relative to the areas in the middle of trace slightly
Change.Correspondingly, it can be noted that with the reduction of track width, with rectangular cross section and uniform the Nomenclature Composition and Structure of Complexes
The expected resistance of preferable trace compare, edge effect plays bigger effect in the resistance of traces for affecting per unit length.
In order to have identical edge effect influence amount to the resistance value of high and low-ohm resistors, therefore provide with approximately the same mark
At least first and second resistors of line width therefore ensure that the preferable matching of their resistance value and correspondingly improve initial
Precision, temperature stability and long-time stability, this is favourable.
Generally speaking, it is proposed that at least first and second resistors of potentiometer are by identical resistive film material system
Into, with the trace length more than the corresponding particular trace length and there is identical track width.
The other effect played a role in terms of the resistivity of resistive film material is affected is relevant with manufacturing technology.For example,
When resistor carrys out silk screen printing using thick film technology, Mechanical Moving direction of the silk screen on insulating surface is built according to print direction
The a certain anisotropy behavior of the per unit length resistance of traces of vertical gained.Anisotropy behavior when using thin film technique is also
Inevitably, because the sputtering angle on substrate area is not completely vertical and constant, but slight change.In addition,
During manufacture, especially during encapsulating and when so that being electrically connected to contact terminal, and can during the life-span of potentiometer
The mechanical stress of appearance generally has anisotropic properties.Anisotropic stress is for three-dimensional（Such as cylinder）Potentiometer compares two dimension
Flat potentiometer becomes apparent from.In order to affect height and low-ohm resistors in identical anisotropy mode, the present invention's
Advise with approximately uniform orientation arranging the main trace section of at least the first and second resistors in further embodiment, wherein
These main trace sections will surround the angle between zero and 30 degree of maximum.Term main trace section is used for considerably long（With only
It is that bending is relative）And the total resistance value for mutually comparing the trace with other trace segments has those of the sinuous trace of highest impact
Part.In the case of straight line, the main trace section and trace are identical in itself.
Substantially thought based on these for the initial value, temperature stability and long-time stability matching for making high and low-ohm resistors
Think, these resistors can be designed in different ways to realize their desired resistance values and to be achieved in desired electricity
Pressure ratio.The corresponding embodiment of these examples that may be designed and the present invention will become obvious from accompanying drawing and corresponding description.
Description of the drawings
Fig. 1 illustrated from the resitstance voltage divider with high and low-ohm resistors known in the art,
Fig. 2 is shown with resitstance voltage divider for measuring the schematic diagram of purpose,
Fig. 3 illustrates the first embodiment of resitstance voltage divider of the invention,
Fig. 4 illustrates dependency of the relative resistivities to smaller for example composite,
Fig. 5 illustrates the schematic cross section of resistor traces,
Fig. 6 to 12 illustrates the further embodiment of resitstance voltage divider of the invention,
Figure 13 illustrates the fine setting of low-ohm resistors,
Figure 14 illustrates the schematic electrical diagram of the embodiment for Fig. 6 to 12.
Specific embodiment
From the potentiometer of Fig. 1 known in the art, wherein with resistance value R1High-ohmic resistor with multiple curved
Bent long and narrow trace and wherein there is resistance value R2Low-ohm resistors there is short and wide trace.High-ohmic resistance
Device is placed between the first contact terminal A and the second contact terminal B, and low-ohm resistors are placed in the second contact terminal B
Between the 3rd contact terminal C.Resistive film material for high and low-ohm resistors is different here.
Figure 2 illustrates the equivalent schematic electrical diagram of the potentiometer of Fig. 1.Such potentiometer is for example in 3.6kV and 36kV
Between middle pressure scope voltage sensor used in, KEVCD the and KEVA sensor types of such as ABB.In voltage sensor
In, it is U to apply input voltage between contact terminal A and C in first and the 3rdin（Its representative amount to be measured）, and there is little obtaining
The output voltage U of many valuesout（Generally by equal to potentiometer ratio (R1+ R2)/R2The factor reduce）It is then passed to electronics electricity
Road is to process and to be transformed into measured value.
As seen from Fig. 1, the trace of both high and low-ohm resistors and corresponding contact terminal A, B and C portion
Divide and overlap.In these overlapping regions, there is above-described interfacial effect, as indicated by real and imaginary arrow respectively.Interface
Effect can preferably from Fig. 4 understand, its for example composite illustrate relative resistivities to resistor traces length according to
Lai Xing.In particular trace length LCOn, relative resistivities becomes independent from trace length.That is, long in particular trace
Degree LCOn, the individually designed and other length of resistor no longer affects resistivity, so that easily and more reliably
It is accurate to limit resistance value R1And R2And thus limit ratio（R1+ R2）/R2.Correspondingly, interfacial effect can be by high and low Europe
Nurse resistor provides the trace length on the particular trace length of their resistive film materials and matches them, the material according to
The present invention is identical.
In addition, ratio（R1+ R2）/R2Precision and long-time stability can be by using identical track width with even
Better way is guaranteed.Compared with the ideal resistor trace being shown in broken lines, Fig. 5 illustrates the true electricity described with solid line
The schematic cross section of resistance device trace.Reference number 1 indicates resistive film material and reference number 2 indicates dielectric substrate.Arrow
Indicate the region of the edge of the track width for so-called edge effect wherein occur.The size in these regions is for all traces
Width is approximately the same, it means that for less track width, actual resistance is mutually more poor with ideal resistance values.In Fig. 1
Situation（The wherein track width of low-ohm resistors is more much bigger than the track width of high-ohmic resistor）Under, resistance value R1Than
Resistance value R2Affected higher by edge effect.In order that impact matching of the edge effect to resistance value, height of the invention
Identical track width is provided with low-ohm resistors.
The first embodiment of the present invention schematically figure 3 illustrates, wherein high-ohmic resistor and low-ohm resistors
Be made up of identical resistive film material, with particular trace length L in the materialCOn trace length-such as have five
Millimeter, and there is identical track width.Compared with the potentiometer of Fig. 1, the trace length of high-ohmic resistor increases, thus
Make its resistance value R3Increase, so as to resistance value R4Increase react and make voltage ratio（R3+ R4）/R4Maintain near
Like identical value.Because the impact matching of the resistivity to high and low-ohm resistors, than（R3+ R4）/R4With the essence for improving
Degree and long-time stability.
The general featuress of the present invention（That is, high and low-ohm resistors are provided with identical material and track width and is made
Particular trace length L of their trace length in the materialCOn）Also in the every other embodiment being described below it is in
It is existing.In the signal description of the second embodiment of the present invention that figure 6 illustrates, it is assumed that resistance value R of low-ohm resistors4Maintain
With identical value in figure 3 at.In this and all further embodiments, resistance value R of low-ohm resistors4By making
Multiple straight resistor traces geometrically in parallel and make their electrical connections in parallel and realizing.That is, low ohmic resistance
Resistance value R of device4In parallel the resistor network of resistor and obtain, as described in fig. 14.In figure 6, reference number
Word 4 indicates high-ohmic resistor, and which is also called first resistor device, and reference number 5 and 6 indicates to belong to resistors in parallel network
（Which is called low-ohm resistors）Second and 3rd resistor device.Sum it up, ten resistors or resistor traces are in geometry
Upper in parallel and electrically in parallel arrangement is forming low-ohm resistors.
5th embodiment of Fig. 7 with the difference of the second embodiment of Fig. 6 is：In addition, the master of high-ohmic resistor
Want trace segments 3 with parallel second, third and all other resistors（Which forms low-ohm resistors）Main mark
7 identical of line segment is orientated.They surround the angle of zero degree.For simplicity reason, the main mark of total of eight is only illustrated by arrow
Two in line segment.The alignment of resistor orientation causes the anisotropy shadow of the resistivity of the trace to high and low-ohm resistors
Loud matching.
The potentiometer design of Fig. 6 and 7 is especially adapted to the neutralization high-voltage applications on 5kV, because high-ohmic resistance
The high-pressure area of device（Which is located near contact terminal A）The distance between with the longest distance towards other contact terminals B and C,
Thus reduce the probability of unexpected voltage breakdown.
The alternative of 3rd embodiment illustrates that wherein high-ohmic resistor is no longer formed as square wave, but makees in figs. 8 and 9
It is the serpentine fashion that there is fillet in knee, the main trace 3 of wherein high-ohmic resistor includes and low-ohm resistors
The angle of zero degree formed by resistor traces（In Fig. 8）With the angle less than 30 degree（In Fig. 9）.
It is to figure 12 illustrates respectively that wherein high and low-ohm resistors have the further embodiment of approximately the same orientation
Fourth embodiment and the 5th and the sixth embodiment that illustrate in figures 10 and 11.These designs are due to the height of high-ohmic resistor
Relatively short distance between intermediate pressure section and contact terminal B or between high pressure contact terminal A and low pressure contact terminal C（Compared with Fig. 2）
And more suitable for relatively low voltage range.
The 5th and sixth embodiment illustrated in Figure 10 and 11 is shown respectively such design：Wherein high-ohmic resistor cloth
It is set to a straight trace.Unique difference between Figure 10 and 11 is high-ohmic resistor and resistance in the 5th embodiment
Device trace（Which forms low-ohm resistors）With identical trace length, and they have difference in the sixth embodiment
Trace length.
In fig. 13, the potentiometer according to 3rd embodiment is shown, wherein belonging to the resistor traces of low-ohm resistors
In one interrupted by it is cut into two pieces（As indicated by solid arrow）.Like that, corresponding resistors in parallel network
One in resistor is eliminated, and thus makes resistance value R4Increased an increment.By remove resistive film material part come
The resistance value of adjustment resistance film resistor is referred to as finely tuned in the art.It may be noted that, as the low of resistors in parallel trace network
The design of ohmic resistor is allowed by taking whole resistors away from resistor network（Resistor traces are removed with by only part
Resistive film material and the simulation fine setting realized is relative）And finely tuned in a kind of digital mode, such as example in US 7,079,004
Described in.Simulation fine setting leaves cut edge in the membrane material of resistor, and which can change the micro structure of material and can lure
Stress is led, the stability of resistance value is usually both affected.These negative effects can be by the fine setting of alternatively Applied Digital
Avoid.
Claims (9)
1. a kind of resitstance voltage divider, with the voltage ratio between ten and 1,000,000, the resitstance voltage divider includes：
The first resistor device being electrically connected in series and second resistance device, first and second resistor are made up simultaneously of resistive film material
And each applied on an insulating substrate in the form of trace,
Wherein described first and second resistor is made up of identical resistive film material, with corresponding particular trace length it
On trace length and have identical track width, if wherein the trace length the particular trace length it
On, then the resistance value and drift parameter of first and second resistor is guaranteed, and
Wherein described first resistor device is connected between the first contact terminal and the second contact terminal, the first contact terminal edge
First direction extends, and
The second resistance device is connected between second contact terminal and the 3rd contact terminal, and described second and the 3rd contacts
Terminal simultaneously extends along one of the first direction and second direction, the second direction perpendicular to the first direction, and
Wherein described second resistance device is made up of multiple resistor traces, and each resistor traces is accordingly with described second and
Straight line between three contact terminals.
2. potentiometer as claimed in claim 1, wherein, described first（4）With second（5）Resistor is with two millimeters
Trace length.
3. potentiometer as claimed in claim 1, wherein, at least the 3rd（6）Resistor is in parallel with the second resistance device to be electrically connected
Connect and wherein described second（5）With the described at least the 3rd（6）Resistor is geometrically to be arranged in parallel and having identical
The straight trace of trace length and identical track width.
4. the potentiometer as described in any one of claims 1 to 3, wherein, described first（4）The trace of resistor has wriggles
The shape of Yan forms.
5. potentiometer as claimed any one in claims 1 to 3, wherein, described at least first（3）With second（7）Resistor
Main trace section with it is approximately uniform orientation arrangement and wherein described main trace section（3,7）Surround zero and 30 degree of maximum
Between angle.
6. potentiometer as claimed in claim 3, wherein, the first resistor device is and described second and described at least the 3rd electric
The straight trace that resistance device is geometrically arranged in parallel.
7. potentiometer as claimed in claim 6, wherein, the first resistor device is with described second and the described at least the 3rd
Resistor identical trace length.
8. potentiometer as claimed in claim 3, wherein, described second and/or the trace of at least 3rd resistor device cut
It is used to finely tune purpose into two pieces.
9. a kind of voltage sensor, including the potentiometer as any one of claim 1 to 8.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11001578.1 | 2011-02-25 | ||
| EP11001578.1A EP2492925B1 (en) | 2011-02-25 | 2011-02-25 | Resistive voltage divider made of a resistive film material on an insulating substrate |
| PCT/EP2012/000781 WO2012113559A1 (en) | 2011-02-25 | 2012-02-23 | Resistive voltage divider made of a resistive film material on an insulating substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103460308A CN103460308A (en) | 2013-12-18 |
| CN103460308B true CN103460308B (en) | 2017-04-12 |
Family
ID=44281105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280010237.7A Active CN103460308B (en) | 2011-02-25 | 2012-02-23 | Resistive voltage divider made of a resistive film material on an insulating substrate |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9646748B2 (en) |
| EP (1) | EP2492925B1 (en) |
| CN (1) | CN103460308B (en) |
| BR (1) | BR112013021198A2 (en) |
| WO (1) | WO2012113559A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2492926B1 (en) * | 2011-02-25 | 2013-07-10 | Abb Ag | Resistive voltage divider with high voltage ratio |
| EP2492697B1 (en) | 2011-02-25 | 2013-04-03 | Abb Ag | Resistive voltage divider with improved phase accuracy |
| CN103597554B (en) | 2011-02-25 | 2016-09-28 | Abb股份公司 | Resistive structure and resistance divider are arranged |
| RU173734U1 (en) * | 2017-04-06 | 2017-09-07 | Акционерное общество "Финансово-промышленная компания "Энергия" | Resistive voltage divider |
| CN110832330A (en) * | 2017-06-13 | 2020-02-21 | 3M创新有限公司 | High-voltage impedance component |
| EP3415928A1 (en) * | 2017-06-13 | 2018-12-19 | 3M Innovative Properties Company | High-voltage impedance assembly |
| CN107592686A (en) * | 2017-09-19 | 2018-01-16 | 唐锋机电科技（深圳）有限公司 | Electric radiant Heating Film and electric iron |
| US10840241B2 (en) * | 2019-01-04 | 2020-11-17 | Texas Instruments Incorporated | Resistor divider with improved resistor matching |
| WO2021065329A1 (en) * | 2019-09-30 | 2021-04-08 | 京セラ株式会社 | Circuit substrate and electronic device |
| WO2021065323A1 (en) * | 2019-09-30 | 2021-04-08 | 京セラ株式会社 | Circuit board and electronic device |
| CN114914041A (en) * | 2022-05-19 | 2022-08-16 | 西安高研电器有限责任公司 | Resistor or resistor divider sharing substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7079004B2 (en) * | 2003-10-10 | 2006-07-18 | Agilent Technologies, Inc. | Precision thin film AC voltage divider |
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| GB735889A (en) | 1952-11-06 | 1955-08-31 | George Victor Planer | Improvements in or relating to electrical resistors |
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- 2012-02-23 BR BR112013021198-9A patent/BR112013021198A2/en not_active Application Discontinuation
- 2012-02-23 CN CN201280010237.7A patent/CN103460308B/en active Active
- 2012-02-23 WO PCT/EP2012/000781 patent/WO2012113559A1/en active Application Filing
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2013
- 2013-08-23 US US13/974,108 patent/US9646748B2/en active Active
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| US7079004B2 (en) * | 2003-10-10 | 2006-07-18 | Agilent Technologies, Inc. | Precision thin film AC voltage divider |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130335106A1 (en) | 2013-12-19 |
| US9646748B2 (en) | 2017-05-09 |
| EP2492925B1 (en) | 2013-08-07 |
| EP2492925A1 (en) | 2012-08-29 |
| BR112013021198A2 (en) | 2020-10-27 |
| WO2012113559A1 (en) | 2012-08-30 |
| CN103460308A (en) | 2013-12-18 |
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