CN103456792B - Semiconductor component structure - Google Patents
Semiconductor component structure Download PDFInfo
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- CN103456792B CN103456792B CN201310349646.6A CN201310349646A CN103456792B CN 103456792 B CN103456792 B CN 103456792B CN 201310349646 A CN201310349646 A CN 201310349646A CN 103456792 B CN103456792 B CN 103456792B
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- grid layer
- ring
- pipe unit
- semiconductor component
- component structure
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Abstract
A kind of semiconductor component structure, it comprises at least one cyclic crystalline pipe unit, is located in substrate.Cyclic crystalline pipe unit comprises a solid grid layer, a doped layer and a ring-type grid layer, and be sequentially located at from inside to outside in substrate, by the design of solid or tubular shape, the rim circumference of the same area can be increased in, so motor current density, withstand voltage and power stage effect.
Description
Technical field
The present invention relates to a kind of semiconductor component structure, refer to a kind of semiconductor component structure using the transistor unit of circulus especially.
Background technology
Along with the progress of science and technology and people increase for the polyfunctional demand degree of electronic product, therefore, the circuit of multiple difference in functionality must be integrated; Relative, more polyfunctional electronic product, power supply that just must be more is for should electronic product start, and generally each function is the power supply being provided institute's palpus by its exclusive power system, but under the consideration of cost and volume, this mode certainly will cannot be implemented.
For the problem of power supply supply, industry proposes many different types of power supply changeover devices and produces enough large power, as DC-DC power supply converter or AC/DC power transducer, solves aforesaid problem.But, these power supply changeover devices are in order to produce enough large power, the multiple power transistor having powerful current driving ability of usual needs, namely increase the girth of grid, beginning can increase current density, and the meeting increasing girth area relative takies a large amount of chip areas, therefore, this power transistor, except bulky problem, still has multiple multiple problems that can face on circuit layout such as current density, heat radiation degree, conducting resistance and electric current uniformity.
In view of this, the present invention for the disappearance of above-mentioned prior art, proposes a kind of semiconductor component structure, effectively to overcome above-mentioned problem then.
Summary of the invention
Main purpose of the present invention is to provide semiconductor element structure, and it, by the solid transistor unit producing double-grid structure with ring-type, can increase rim circumference, and then improves current density, and power output is greatly improved.
Secondary objective of the present invention is to provide semiconductor element structure, and it can make a large amount of annular transistors on the substrate of limited areal, can not only promote overall power and export, can allow again overall volume micro, to meet the compact demand of product.
For reaching the above object, the invention provides semiconductor element structure, comprising a substrate and at least one cyclic crystalline pipe unit.Cyclic crystalline pipe unit, comprises a solid grid layer, a ring-type grid layer and a doped layer; Solid grid layer is located in substrate, and ring-type grid layer is located on solid grid layer, and doped layer, between solid grid layer and ring-type grid layer, forms two grid transistor unit according to this.Wherein, by collocation that is solid and circulus, mutual field effect effect can be produced to each other, and then promote withstand voltage degree.
Wherein, described cyclic crystalline pipe unit is polygon or triangle.
Wherein, described solid grid layer is polygon grid layer, and described ring-type grid layer forms the shape of the polygon grid layer described in correspondence.
Wherein, described solid grid layer is triangle grid layer, and described ring-type grid layer forms the shape of the triangle grid layer described in correspondence.
Wherein, described doped layer is drain electrode or source electrode.
Wherein, described cyclic crystalline pipe unit is power transistor cell.
Wherein, when described cyclic crystalline pipe unit is multiple, interval is located in described substrate.
Wherein, described cyclic crystalline pipe unit more comprises multiple subring shape transistor unit, and its shape is triangle, can establish formation one polygonal ring shape transistor unit or a triangle cyclic crystalline pipe unit by ring.
Compared with prior art, the present invention has the following advantages:
The present invention, by the solid transistor unit producing double-grid structure with ring-type, can increase rim circumference, and then improves current density, by ring-type mutual field effect effect to each other, pressure withstanding degree is greatly increased, also can improve power output.Moreover, a large amount of annular transistors can be made on the substrate of limited areal, overall power can not only be promoted and export, with the power supply requirement in response to multifunction electronic product, overall volume micro can be allowed again, to meet the compact demand of product.
Accompanying drawing explanation
Fig. 1 is structure chart of the present invention.
The cutaway view that Fig. 2 gets along A-A ' hatching for Fig. 1.
Fig. 3 is another structure chart of the present invention.
Fig. 4 A is the schematic diagram that the present invention uses multiple polygonal cyclic crystalline pipe unit.
Fig. 4 B is the schematic diagram that the present invention uses multiple leg-of-mutton cyclic crystalline pipe unit.
Fig. 5 is that multiple annular transistor cell rings is established the schematic diagram forming polygonal ring shape transistor unit by the present invention.
Description of reference numerals: 10-substrate; 12-cyclic crystalline pipe unit; The solid grid layer of 122-; 124-ring-type grid layer; 126-doped layer; 14-subring shape transistor unit.
Embodiment
See also Fig. 1 and Fig. 2, Fig. 1 is structure chart of the present invention, the cutaway view that Fig. 2 gets along A-A ' hatching for Fig. 1.Semiconductor component structure comprises a substrate 10 and at least one cyclic crystalline pipe unit 12.Cyclic crystalline pipe unit 12 comprises solid grid layer 122, ring-type grid layer 124 and a doped layer 126; Solid grid layer 122 is located in substrate 10, and ring-type grid layer 124 is located on solid grid layer 122, and doped layer 126, between solid grid layer 122 and ring-type grid layer 124, forms two grid transistor unit according to this.
Wherein, cyclic crystalline pipe unit 12 is power transistor, and doped layer 126 is drain electrode or source electrode.Because the area of grid is directly proportional to electric current, therefore the overall circumference of grid is enough grown, and effectively can improve the driving force of electric current.In detail, for increasing perimeter length and width, a perforate is established on substrate, and solid grid layer 122 Shen is amassed in perforate, again doped layer 126 is located on the outside of solid grid layer 122 according to the shape of solid grid layer 122, finally again ring-type grid layer 124 is located on the outside of doped layer 126 according to the shape of doped layer 126.If cyclic crystalline pipe unit 12 is column, when solid grid layer 122 is subject to a bias voltage, i.e. corresponding generation one passage, the circumference that the radius of circle that channel width is solid grid layer 122 calculates.In like manner, when ring-type grid layer 124 is subject to a bias voltage, the width of its passage is the mean value of ring-type grid layer 124 inner ring radius and outer shroud radius is radius, and institute calculates to obtain circumference.By the width design of solid grid layer 122 and the circulus design of ring-type grid layer 124, the length of overall circumference can be increased, current density is significantly promoted.Certainly, the structural design of cyclic crystalline pipe unit 12 is different, to calculate the mode of overall circumference also different, as shown in Figure 3, cyclic crystalline pipe unit 12 is polygonal shape, and solid grid layer is polygon grid layer, and ring-type grid series of strata form the shape of the polygon grid layer described in correspondence; Or as shown in Figure 3, cyclic crystalline pipe unit 12 is triangular shaped, solid grid layer 122 is triangular shaped, and the profile of doped layer 126 and ring-type grid layer 124 sequentially corresponding solid grid layer 122, ring is established and is formed leg-of-mutton doped layer 126 and ring-type grid layer 124.No matter which kind of aspect is the structural design of cyclic crystalline pipe unit 12 be, all do not depart from the present invention and utilize ring-type grid 124 and solid grid layer 122 to increase the object of the edge overall circumference of the same area.Wherein, cyclic crystalline pipe unit 12 is polygonal shape, and as triangle, regular pentagon or regular hexagon etc., each summit of polygonal shape is all modified to fan or parabolic curve, can improve the phenomenon of cyclic crystalline pipe unit 12 point discharge.As this area is known known by the knowledgeable usually, if doped layer 126 is the drain electrode of cyclic crystalline pipe unit 12, then the doped layer be positioned at outside ring-type grid layer 124 is then source electrode; Otherwise if doped layer 126 is the source electrode of cyclic crystalline pipe unit 12, then the doped layer be positioned at outside ring-type grid layer 124 is then drain electrode.
Again as shown in Figure 4 A, when cyclic crystalline pipe unit 12 is multiple, and when shape is polygon, use multiple two grid cyclic crystalline pipe unit 12 by the present invention, interval is located in substrate 10, effectively can reduce area shared on substrate.Again as shown in Figure 4 B, when cyclic crystalline pipe unit 12 is multiple, and shape is when being triangle, can by this little leg-of-mutton cyclic crystalline pipe unit 12 oppositely dislocation be located in substrate 10, allow the cyclic crystalline pipe unit 12 of sufficient amount be located in the substrate 10 of limited areal.
Again as shown in Figure 5, cyclic crystalline pipe unit 12 more comprises multiple subring shape transistor unit 14, its shape is triangle, formation one polygonal ring shape transistor unit or a triangle cyclic crystalline pipe unit can be established by ring, at this, formation polygonal ring shape transistor unit is established to illustrate with ring, six sub-cyclic crystalline pipe unit 14 rings are used to establish formation one polygonal ring shape transistor unit, as regular hexagon, depending on the overall circumference of each subring shape transistor unit 14 of Demand Design, again the overall circumference of six sub-cyclic crystalline pipe units 14 is added the General Logistics Department, polygonal ring shape transistor unit can be allowed significantly to promote at the overall circumference of the same area, this design can make a large amount of cyclic crystalline pipe units 12 simultaneously on effective substrate 10 area.Wherein, between six sub-cyclic crystalline pipe units 14 are adjacent, do not need Shen to amass doped layer (such as FieldOxide), certainly, also can amass doped layer between six sub-cyclic crystalline pipe units 14 are adjacent in Shen.At this, be not limited to the cyclic crystalline pipe unit of any shape, if use above-mentioned subring shape transistor unit 14 adjacent between Shen amass doped layer or amass the designs such as doped layer without Shen, all belong to category of the present invention.
In sum, the present invention, by the solid transistor unit producing double-grid structure with ring-type, can increase rim circumference, and then improves current density, by ring-type mutual field effect effect to each other, pressure withstanding degree is greatly increased, also can improve power output.Moreover, a large amount of annular transistors can be made on the substrate of limited areal, overall power can not only be promoted and export, with the power supply requirement in response to multifunction electronic product, overall volume micro can be allowed again, to meet the compact demand of product.
The above description of this invention is illustrative, and nonrestrictive, and those skilled in the art is understood, and can carry out many amendments, change or equivalence, but they all will fall within the scope of protection of the present invention within the spirit and scope of claim restriction to it.
Claims (8)
1. a semiconductor component structure, is characterized in that, comprising:
One substrate and at least one cyclic crystalline pipe unit, this cyclic crystalline pipe unit comprises:
One solid grid layer, is located in described substrate;
One ring-type grid layer, is located on described solid grid layer, when described ring-type grid layer is subject to a bias voltage, i.e. and corresponding generation one passage, the width of described passage is the girth calculated according to inner ring radius and the outer shroud radius of described ring-type grid layer; And the length of overall circumference is increased by the width design of solid grid layer and the circulus design of ring-type grid layer; And
One doped layer, between described solid grid layer and described ring-type grid layer.
2. semiconductor component structure as claimed in claim 1, it is characterized in that, described cyclic crystalline pipe unit is polygon or triangle.
3. semiconductor component structure as claimed in claim 2, it is characterized in that, described solid grid layer is polygon grid layer, and described ring-type grid layer forms the shape of the polygon grid layer described in correspondence.
4. semiconductor component structure as claimed in claim 2, it is characterized in that, described solid grid layer is triangle grid layer, and described ring-type grid layer forms the shape of the triangle grid layer described in correspondence.
5. semiconductor component structure as claimed in claim 1, is characterized in that, described doped layer is drain electrode or source electrode.
6. semiconductor component structure as claimed in claim 1, it is characterized in that, described cyclic crystalline pipe unit is power transistor cell.
7. semiconductor component structure as claimed in claim 1, it is characterized in that, when described cyclic crystalline pipe unit is multiple, interval is located in described substrate.
8. semiconductor component structure as claimed in claim 1, it is characterized in that, described cyclic crystalline pipe unit more comprises multiple subring shape transistor unit, and its shape is triangle, and ring establishes formation one polygonal ring shape transistor unit or a triangle cyclic crystalline pipe unit.
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| CN103456792B true CN103456792B (en) | 2016-03-02 |
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| US9520880B2 (en) * | 2014-01-31 | 2016-12-13 | Texas Instruments Deutschland Gmbh | Configurable analog front ends for circuits with substantially gate enclosed inner electrode MOSFET switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201446A (en) * | 2011-05-10 | 2011-09-28 | 上海先进半导体制造股份有限公司 | Grounded-grid NMOS (N-channel metal oxide semiconductor) unit for antistatic protection and antistatic protection structure thereof |
| JP5061675B2 (en) * | 2007-03-20 | 2012-10-31 | 株式会社デンソー | Semiconductor device and semiconductor chip used therefor |
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| JP5269017B2 (en) * | 2010-09-13 | 2013-08-21 | 株式会社東芝 | Power amplifier |
| WO2012119053A1 (en) * | 2011-03-02 | 2012-09-07 | King Abdullah University Of Science And Technology | Cylindrical-shaped nanotube field effect transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5061675B2 (en) * | 2007-03-20 | 2012-10-31 | 株式会社デンソー | Semiconductor device and semiconductor chip used therefor |
| CN102201446A (en) * | 2011-05-10 | 2011-09-28 | 上海先进半导体制造股份有限公司 | Grounded-grid NMOS (N-channel metal oxide semiconductor) unit for antistatic protection and antistatic protection structure thereof |
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