CN103449446B - Method for preparing trichlorosilane - Google Patents

Method for preparing trichlorosilane Download PDF

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CN103449446B
CN103449446B CN201310373751.3A CN201310373751A CN103449446B CN 103449446 B CN103449446 B CN 103449446B CN 201310373751 A CN201310373751 A CN 201310373751A CN 103449446 B CN103449446 B CN 103449446B
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silicon tetrachloride
gas
trichlorosilane
reactions
hydrogen
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CN103449446A (en
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张升学
万烨
严大洲
毋克力
肖荣辉
汤传斌
杨永亮
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China ENFI Engineering Corp
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China ENFI Engineering Corp
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Abstract

The invention discloses a method for preparing trichlorosilane. The method comprises a step of carrying out hydrochlorination synthesis reaction on ganister sand, hydrogen and at least one material selected from hydrogen chloride and silicon tetrachloride, so as to obtain the trichlorosilane. By using the method, the trichlorosilane can be effectively prepared; the method is simple in process, safe, energy-saving and environment-friendly, low in cost, and high in purity of produced trichlorosilane, and can be effectively applied to production of electronic grade polysilicon; the generated tail gas and waste residue can be recycled, so as to achieve the environmental requirements.

Description

Prepare the method for trichlorosilane
Technical field
The present invention relates to photovoltaic industry technical field, particularly, relate to the method preparing trichlorosilane.
Background technology
Sun power receives the attention in the whole world as a kind of renewable and clean energy resource, and the technology utilizing solar energy resources to generate electricity has been considered to the most promising new energy technology in the current whole world.Thus, with solar energy generation technology for the photovoltaic industry of core obtains swift and violent development at the beginning of 21 century.Polysilicon is as the main raw material(s) of photovoltaic industry, and along with the fast development of photovoltaic industry, its demand significantly increases.And then the demand of producing the main raw material trichlorosilane of polysilicon also increases thereupon.
But present stage, the preparation method of trichlorosilane still had much room for improvement.
Summary of the invention
The present invention completes based on the following discovery of contriver:
The polysilicon production process reported at present is more, but production efficiency is lower, and cost is higher, and producing intermediate product needs further purification & isolation, and separating difficulty is comparatively large, produces liquid and waste slag produced many, seriously polluted.Thus, a kind of cost electronic-grade polycrystalline silicon production method that is low, that consume energy few is sought imperative.And then, find that a kind of cost is low, power consumption less, energy-conserving and environment-protective, clean the preparation technology of production of polysilicon main raw material trichlorosilane, also significant.
The present invention is intended at least to solve one of technical problem existed in prior art.For this reason, one object of the present invention is to propose a kind of method that low-cost energy-saving environment-friendly type produces trichlorosilane.
According to an aspect of the present invention, the present invention proposes a kind of method preparing trichlorosilane.According to embodiments of the invention, the method comprises: make silica flour, hydrogen and be selected from least one generation chlorine hydrogenation building-up reactions of hydrogenchloride and silicon tetrachloride, to obtain trichlorosilane.Contriver is surprised to find, utilize the method effectively can prepare trichlorosilane, and the method technique is simple, safety, energy-conserving and environment-protective, cost are low, and the purity of trichlorosilane produced is high, the production of electronic-grade polycrystalline silicon can be effective to, the tail gas produced and waste residue can be utilized again, thus meet the requirement of environmental protection.
In addition, the method preparing trichlorosilane according to the above embodiment of the present invention can also have following additional technical characteristic:
According to embodiments of the invention, when there is nickel-base catalyst or copper-based catalysts, making to comprise silicon tetrachloride and contacting with silica flour with the gaseous mixture of hydrogen, there is described chlorine hydrogenation building-up reactions.Thereby, it is possible to effectively improve the efficiency of chlorine hydrogenation building-up reactions, be conducive to trichlorosilane and generate, and the carrying out of following purification steps.
According to embodiments of the invention, described in comprise in the gaseous mixture of silicon tetrachloride and hydrogen, the mol ratio of silicon tetrachloride and hydrogen is 1:2 ~ 5.Thus, the efficiency of chlorine hydrogenation building-up reactions significantly improves, and is conducive to trichlorosilane and generates, and the carrying out of following purification steps.
According to embodiments of the invention, described chlorine hydrogenation building-up reactions is carried out at the temperature of 500 ~ 550 degrees Celsius.Thus, the efficiency of chlorine hydrogenation building-up reactions is high, is conducive to trichlorosilane and generates, and the carrying out of following purification steps.
According to embodiments of the invention, described chlorine hydrogenation building-up reactions is at 500 ~ 550 degrees Celsius, carries out under the condition of 1.5 ~ 3.5MPa.Thus, chlorine hydrogenation building-up reactions safety, efficiency are high, and the purity of the trichlorosilane of generation is high.
According to embodiments of the invention, obtaining by carrying out disproportionation reaction to trichlorosilane at least partially of described silicon tetrachloride.Thus, carried out recycle by the silicon tetrachloride in the disproportionation reaction product in polysilicon production process subsequent step, thus can energy-conserving and environment-protective have been realized, the object reduced costs.
According to embodiments of the invention, described in comprise silicon tetrachloride and hydrogen gaseous mixture obtain through the following steps: silicon tetrachloride liquid is mixed with hydrogen, obtains gas-liquid mixture; Chlorine hydrogenation building-up reactions product is utilized to carry out heat exchange process to described gas-liquid mixture, to obtain through the gas-liquid mixture of preheating with through overcooled chlorine hydrogenation building-up reactions product; And utilize resistance heater, the gas-liquid mixture through preheating is heated, to comprise the gaseous mixture of silicon tetrachloride and hydrogen described in obtaining.Thus, can realize when consuming energy minimum the cooling of chlorine hydrogenation building-up reactions product simultaneously and preheating be carried out to gas-liquid mixture, and can effectively obtain the gaseous mixture comprising silicon tetrachloride and hydrogen, for the chlorine hydrogenation building-up reactions in following cycle is supplied raw materials, thus effectively can realize energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, method of the present invention comprises further: carry out the first rectifying purification process to described trichlorosilane, to obtain purified trichlorosilane and the first distillation residual liquid.Thus, the purity of trichlorosilane of acquisition is very high, can be effective to production of polysilicon.
According to embodiments of the invention, comprise further: carry out dust removal process by described through overcooled chlorine hydrogenation building-up reactions product; Chlorine hydrogenation building-up reactions product through dust removal process is carried out condensation, so that difference recover hydrogen and chlorosilane liquid produced, described chlorosilane liquid produced comprises trichlorosilane and silicon tetrachloride; And described chlorosilane liquid produced is used for described first rectifying purification process.Thus, through overcooled chlorine hydrogenation building-up reactions product by after above-mentioned process, chlorosilane liquid produced and hydrogen can be obtained, and chlorosilane liquid produced and hydrogen can be supplied to corresponding steps follow-up in polycrystalline silicon preparing process respectively, carry out recycle again, thus effectively can realize energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, described hydrogen is returned for carrying out described chlorine hydrogenation building-up reactions.Thereby, it is possible to hydrogen is recycled, for chlorine hydrogenation building-up reactions is supplied raw materials, energy-conserving and environment-protective, and can production cost be reduced.
According to embodiments of the invention, described first rectifying purification process utilizes multiple rectifying tower of series connection to carry out, and wherein, in each rectifying tower, the axial direction due that the material for carrying out rectification process is along described rectifying tower moves from bottom to top.Thereby, it is possible to effectively improve the efficiency of rectifying purification process, thus highly purified trichlorosilane can be obtained.
According to embodiments of the invention, described first rectifying purification process utilizes the first rectifying tower of series connection, Second distillation column and the 3rd rectifying tower to carry out.Thereby, it is possible to ensure the production cost that is suitable for and higher rectifying purification efficiency, thus highly purified trichlorosilane can be obtained simultaneously.
According to embodiments of the invention, the rectification temperature of described first rectifying tower is 60 ~ 100 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 10 ~ 50:1; The rectification temperature of described Second distillation column is 100 ~ 140 degrees Celsius, and pressure is 0.5MPa, and reflux ratio is 20 ~ 50:1; The rectification temperature of described 3rd rectifying tower is 60 ~ 80 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 20 ~ 50:1.Thereby, it is possible to ensure safety in production, and power consumption less, production cost is low, rectifying purification efficiency is high, effective, thus can obtain highly purified trichlorosilane.
According to embodiments of the invention, method of the present invention comprises further: make described purified trichlorosilane generation disproportionation reaction, to obtain the disproportionation reaction product comprising silicon tetrachloride and silane; Second rectifying purification process is carried out to described disproportionation reaction product, to obtain silane gas and silicon tetrachloride; And make described silane gas, in reduction furnace, pyrolytic reaction occur, wherein, be provided with the carrier of silicon core as crystal deposition in described reduction furnace, to obtain polysilicon.Thus, the highly purified trichlorosilane that the present invention prepares can be effective to the production of electronic-grade polycrystalline silicon, thus the method preparing trichlorosilane of the present invention is combined with above steps and effectively can forms new electronic-grade polycrystalline silicon preparation technology, and this explained hereafter cost is low, power consumption less, energy-conserving and environment-protective, the polysilicon purity of production is very high.
According to embodiments of the invention, the silicon tetrachloride that the second rectifying purification process obtains is used for described chlorine hydrogenation building-up reactions.Thus, the silicon tetrachloride in the product of the second rectifying purification process has been carried out recycle, thus can energy-conserving and environment-protective have been realized, the object reduced costs.
According to embodiments of the invention, described disproportionation reaction is at 50 ~ 80 degrees Celsius, carries out under the condition of 0.2 ~ 0.6MPa.Thus, production safety, and power consumption less, production cost is low, disproportionation reaction efficiency is high, effective, is conducive to the carrying out of subsequent step.
According to embodiments of the invention, described disproportionation reaction is carried out in disproportionation reactor, described disproportionation reactor comprises further: disproportionation reactor body, limits disproportionation reaction space in described disproportionation reactor body, and is provided with catalyst layer in described disproportionation reaction space; Trichlorosilane opening for feed, described trichlorosilane opening for feed is arranged on the below of described catalyst layer, for supplying purified trichlorosilane in described disproportionation reaction space; And disproportionation reaction product discharge mouth, described disproportionation reaction product discharge mouth is arranged on the top of described catalyst layer, for the formed disproportionation reaction product comprising silicon tetrachloride and silane is discharged described disproportionation reactor.Thus, disproportionation reaction efficiency is high, effective, and production safety, power consumption less, cost is low, the carrying out that be conducive to subsequent step.
According to embodiments of the invention, described second rectifying purification process is carried out in low-temperature fractionating tower, and wherein, the temperature in described low-temperature fractionating tower is-60 ~-80 degrees Celsius, and pressure is 0.6 ~ 1.0MPa, and reflux ratio is 5 ~ 20:1.Thus, production safety, and power consumption less, production cost is low, rectifying purification efficiency is high, effective, is conducive to the carrying out of subsequent step.
According to embodiments of the invention, the described silane gas that the second rectifying purification process obtains is gathered storage in liquid form, and before entering in reduction furnace pyrolytic reaction occurs, in advance the silane of described liquid form is carried out vaporization process in vaporizer.Thus, be conducive to pyrolytic reaction and carry out, thus effectively can prepare polysilicon, and cost is low, needing can be few, energy-conserving and environment-protective, and pyrolytic reaction efficiency is high.
According to embodiments of the invention, described reduction furnace is bell-jar reduction furnace.Thus, pyrolytic reaction efficiency is high, effective, and the electronic-grade polycrystalline silicon purity prepared is high.
According to embodiments of the invention, in described reduction furnace, be provided with 12,24 or 36 pairs of silicon rods.Thus, adopt silicon core as carrier.Further, according to embodiments of the invention, in reduction furnace, be also provided with the cooling jacket consistent with silicon core logarithm, thus, be conducive to silane gas checking solution deposition, prepare high-purity electronic-grade polycrystalline silicon.
According to embodiments of the invention, the temperature in described reduction furnace is 750 ~ 900 degrees Celsius, and pressure is 0.15 ~ 0.30MPa.Thus, pyrolytic reaction efficiency is high, effective, and reaction safety, the electronic-grade polycrystalline silicon purity prepared is high.
According to embodiments of the invention, comprise further: described first distillation residual liquid is carried out flash distillation process, to obtain silicon tetrachloride gas and solid residue; Described silicon tetrachloride gas is carried out condensation process, to obtain silicon tetrachloride liquid; Described silicon tetrachloride liquid is used for described chlorine hydrogenation building-up reactions; And described solid residue is carried out alkali lye hydrolysis neutralizing treatment and press filtration process successively.Thereby, it is possible to effectively realize the cycling and reutilization of the first distillation residual liquid, thus reach energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, comprise further: being carried out by the reduction tail gas in described reduction furnace being compressed to pressure is 6.0 ~ 10.0MPa; Be-100 ~-120 degrees Celsius by reduction tail gas condensing to the temperature through overdraft, silane gas is condensed into silane liquid, and obtain hydrogen; And described hydrogen is used for described chlorine hydrogenation building-up reactions.Thereby, it is possible to effectively process reduction tail gas, realize non-pollution discharge, ensure cleaner production, and realize the cycling and reutilization of reduction tail gas, thus reach energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, comprise further: by produce in each step containing chlorosilane but not carry out being compressed to pressure containing the tail gas of silane be 0.25 ~ 0.50MPa, and be cooled to the temperature of-15 ~-30 degrees Celsius further, to obtain chlorosilane liquid produced and residual gas; Described chlorosilane liquid produced is carried out described first rectifying purification process; Described residual gas is carried out drip washing, so that the gas obtained through drip washing and washing water; And utilize alkali lye to neutralize described washing water, press filtration is carried out, so that in obtaining and water and filter residue to liquid after neutralization.Thereby, it is possible to effectively contain chlorosilane to what produce in each step but do not process containing the tail gas of silane, realize non-pollution discharge, ensure cleaner production, and realize the cycling and reutilization of tail gas, thus reach energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, be used for carrying out drip washing to described residual gas with water in described.Thereby, it is possible to by and water carry out recycle, thus reduce production cost, and realize non-pollution discharge, ensure cleaner production.
It should be noted that, relative to prior art, the method preparing trichlorosilane of the present invention has the following advantages:
1, whole process system safety and stability, technique is simple, can realize.
2, production cost purity of trichlorosilane that is low, that prepare is high, energy saving technology environmental protection.
3, the method preparing trichlorosilane of the present invention effectively can be combined with aforesaid first rectifying purification process, disproportionation reaction, the second rectifying purification process and pyrolytic reaction step, thus form new electronic-grade polycrystalline silicon preparation technology, and this electronic-grade polycrystalline silicon preparation technology can realize trichlorosilane one stage disproportionation being silane gas; Silane gas and chlorosilane easily separated, purify after purity high, can more than 9N be reached; Silane gas cracking temperature is lower, and energy consumption is lower, and production cost is lower; The polysilicon of preparation is electronic-grade polycrystalline silicon, and purity is high, can reach 9N-11N; Tail gas and the waste residue of discharge all meet environmental requirement, are polysilicon clean preparation method.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 shows the schematic flow sheet of the method preparing polysilicon according to an embodiment of the invention;
Fig. 2 shows the schematic flow sheet of the method preparing polysilicon according to an embodiment of the invention;
Fig. 3 shows according to an embodiment of the invention for the preparation of the structural representation of the equipment of polysilicon;
Fig. 4-Figure 11 respectively illustrates according to an embodiment of the invention for the preparation of the local structure schematic diagram of the equipment of polysilicon.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, term " axis ", " on ", D score, " top ", the orientation of the instruction such as " end " or position relationship be based on orientation shown in the drawings or position relationship, be only the present invention for convenience of description instead of require that the present invention with specific azimuth configuration and operation, therefore must can not be interpreted as limitation of the present invention.
In the present invention, unless otherwise clearly defined and limited, term " is connected ", " connection ", the term such as " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score can comprise the first and second features and directly contact, also can comprise the first and second features and not be directly contact but by the other characterisation contact between them.And, fisrt feature second feature " on ", " top " and " above " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " comprise fisrt feature immediately below second feature and tiltedly below, or only represent that fisrt feature level height is less than second feature.
It should be noted that, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.
According to an aspect of the present invention, the present invention proposes a kind of method preparing trichlorosilane.According to embodiments of the invention, the method comprises: make silica flour, hydrogen and be selected from least one generation chlorine hydrogenation building-up reactions of hydrogenchloride and silicon tetrachloride, to obtain trichlorosilane.Contriver is surprised to find, utilize the method effectively can prepare trichlorosilane, and the method technique is simple, safety, energy-conserving and environment-protective, cost are low, and the purity of trichlorosilane produced is high, the production of electronic-grade polycrystalline silicon can be effective to, the tail gas produced and waste residue can be utilized again, thus meet the requirement of environmental protection.
In addition, according to embodiments of the invention, the method preparing trichlorosilane of the present invention may further include: carry out the first rectifying purification process to described trichlorosilane, to obtain purified trichlorosilane and the first distillation residual liquid; Make described purified trichlorosilane generation disproportionation reaction, to obtain the disproportionation reaction product comprising silicon tetrachloride and silane; Second rectifying purification process is carried out to described disproportionation reaction product, to obtain silane gas and silicon tetrachloride; And make described silane gas, in reduction furnace, pyrolytic reaction occur, wherein, be provided with the carrier of silicon core as crystal deposition in described reduction furnace, to obtain polysilicon.
Thus, the highly purified trichlorosilane that the present invention prepares can be effective to the production of electronic-grade polycrystalline silicon, thus the method preparing trichlorosilane of the present invention is combined with above steps and effectively can forms new electronic-grade polycrystalline silicon preparation technology, and this explained hereafter cost is low, power consumption less, energy-conserving and environment-protective, the polysilicon purity of production is very high.
And then, according to a further aspect in the invention, the present invention proposes a kind of method preparing polysilicon.According to embodiments of the invention, see figures.1.and.2, the method comprises the following steps:
S100: chlorine hydrogenation building-up reactions
First, make silica flour, hydrogen and be selected from least one generation chlorine hydrogenation building-up reactions of hydrogenchloride and silicon tetrachloride, to obtain trichlorosilane.Wherein, the chemical reaction that this step relates generally to is:
3SiCl 4+2H 2+Si——4SiHCl 3。
According to embodiments of the invention, the condition of chlorine hydrogenation building-up reactions is not particularly limited.According to concrete examples more of the present invention, when there is nickel-base catalyst or copper-based catalysts, can make to comprise silicon tetrachloride and contacting with silica flour with the gaseous mixture of hydrogen, there is described chlorine hydrogenation building-up reactions.Thereby, it is possible to effectively improve the efficiency of chlorine hydrogenation building-up reactions, be conducive to trichlorosilane and generate, and the carrying out of following purification steps.Wherein, the ratio comprising silicon tetrachloride and hydrogen in the gaseous mixture of silicon tetrachloride and hydrogen is not particularly limited.According to embodiments of the invention, described in comprise in the gaseous mixture of silicon tetrachloride and hydrogen, the mol ratio of silicon tetrachloride and hydrogen is 1:2 ~ 5.Thus, the efficiency of chlorine hydrogenation building-up reactions significantly improves, and is conducive to trichlorosilane and generates, and the carrying out of following purification steps.
According to embodiments of the invention, the preparation method comprising the gaseous mixture of silicon tetrachloride and hydrogen is not particularly limited.According to some embodiments of the present invention, this gaseous mixture comprising silicon tetrachloride and hydrogen can obtain through the following steps: silicon tetrachloride liquid mixed with hydrogen, obtain gas-liquid mixture; Chlorine hydrogenation building-up reactions product is utilized to carry out heat exchange process to described gas-liquid mixture, to obtain through the gas-liquid mixture of preheating with through overcooled chlorine hydrogenation building-up reactions product; And utilize resistance heater, the gas-liquid mixture through preheating is heated, to comprise the gaseous mixture of silicon tetrachloride and hydrogen described in obtaining.Thus, can realize when consuming energy minimum the cooling of chlorine hydrogenation building-up reactions product simultaneously and preheating be carried out to gas-liquid mixture, and can effectively obtain the gaseous mixture comprising silicon tetrachloride and hydrogen, for the chlorine hydrogenation building-up reactions in following cycle is supplied raw materials, thus effectively can realize energy-conserving and environment-protective, the object reduced costs.
In addition, for through overcooled chlorine hydrogenation building-up reactions product, can also be further processed.According to embodiments of the invention, above-mentioned method of the present invention may further include: carry out dust removal process by described through overcooled chlorine hydrogenation building-up reactions product; Chlorine hydrogenation building-up reactions product through dust removal process is carried out condensation, so that difference recover hydrogen and chlorosilane liquid produced, described chlorosilane liquid produced comprises trichlorosilane and silicon tetrachloride; And described chlorosilane liquid produced is used for described first rectifying purification process.Thus, through overcooled chlorine hydrogenation building-up reactions product by after above-mentioned process, chlorosilane liquid produced and hydrogen can be obtained, and chlorosilane liquid produced and hydrogen can be supplied to corresponding steps follow-up in polycrystalline silicon preparing process respectively, carry out recycle again, thus effectively can realize energy-conserving and environment-protective, the object reduced costs.And for reclaiming the hydrogen obtained, according to embodiments of the invention, described hydrogen can be returned for carrying out described chlorine hydrogenation building-up reactions.Thereby, it is possible to hydrogen is recycled, for chlorine hydrogenation building-up reactions is supplied raw materials, energy-conserving and environment-protective, and can production cost be reduced.
According to embodiments of the invention, the temperature and pressure of chlorine hydrogenation building-up reactions is not particularly limited, as long as can effectively react, obtains trichlorosilane.According to some embodiments of the present invention, described chlorine hydrogenation building-up reactions is carried out at the temperature of 500 ~ 550 degrees Celsius.Thus, the efficiency of chlorine hydrogenation building-up reactions is high, is conducive to trichlorosilane and generates, and the carrying out of following purification steps.According to embodiments of the invention, described chlorine hydrogenation building-up reactions is at 500 ~ 550 degrees Celsius, carries out under the condition of 1.5 ~ 3.5MPa.Thus, chlorine hydrogenation building-up reactions safety, efficiency are high, are conducive to trichlorosilane and generate, and the carrying out of following purification steps.
In addition, the source of the silicon tetrachloride that chlorine hydrogenation building-up reactions adopts is not particularly limited, and can directly provide, and also can be separated from the reaction product of subsequent step or waste liquid and obtain.According to embodiments of the invention, obtaining by carrying out disproportionation reaction to trichlorosilane at least partially of described silicon tetrachloride.Thus, carried out recycle by the silicon tetrachloride in the disproportionation reaction product in polysilicon production process subsequent step, thus can energy-conserving and environment-protective have been realized, the object reduced costs.According to other embodiments of the present invention, can also produce from follow-up first rectifying purification step comprise in the first distillation residual liquid of silicon tetrachloride to be separated obtains.Thereby, it is possible to effectively realize the cycling and reutilization producing waste liquid, thus reach energy-conserving and environment-protective, the object reduced costs.
S200: the first rectifying purification process
Secondly, the first rectifying purification process is carried out to the trichlorosilane of above-mentioned acquisition, to obtain purified trichlorosilane and the first distillation residual liquid.
According to embodiments of the invention, the device that the first rectifying purification process adopts is not particularly limited, as long as effectively can realize the purification process to trichlorosilane.According to some embodiments of the present invention, described first rectifying purification process utilizes multiple rectifying tower of series connection to carry out, and wherein, in each rectifying tower, the axial direction due that the material for carrying out rectification process is along described rectifying tower moves from bottom to top.Thereby, it is possible to effectively improve the efficiency of rectifying purification process, thus highly purified trichlorosilane can be obtained, be conducive to the carrying out of subsequent step.According to preferred embodiments more of the present invention, described first rectifying purification process utilizes the first rectifying tower of series connection, Second distillation column and the 3rd rectifying tower to carry out.Thereby, it is possible to ensure the production cost that is suitable for and higher rectifying purification efficiency simultaneously, thus highly purified trichlorosilane can be obtained, be conducive to the carrying out of subsequent step.Wherein, the reaction conditions in the condition of the first rectifying purification process and each rectifying tower is not particularly limited, as long as trichlorosilane can be carried out effective purifying.According to embodiments of the invention, the rectification temperature of described first rectifying tower is 60 ~ 100 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 10 ~ 50:1; The rectification temperature of described Second distillation column is 100 ~ 140 degrees Celsius, and pressure is 0.5MPa, and reflux ratio is 20 ~ 50:1; The rectification temperature of described 3rd rectifying tower is 60 ~ 80 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 20 ~ 50:1.Thereby, it is possible to ensure safety in production, and power consumption less, production cost is low, rectifying purification efficiency is high, effective, can purify obtain purity be the trichlorosilane of more than 99%.
In addition, can also waste liquid i.e. the first distillation residual liquid that the first rectifying purification process produces be further processed.According to embodiments of the invention, comprise further: described first distillation residual liquid is carried out flash distillation process, to obtain silicon tetrachloride gas and solid residue; Described silicon tetrachloride gas is carried out condensation process, to obtain silicon tetrachloride liquid; Described silicon tetrachloride liquid is used for described chlorine hydrogenation building-up reactions; And described solid residue is carried out alkali lye hydrolysis neutralizing treatment and press filtration process successively.Thereby, it is possible to effectively realize the cycling and reutilization of the first distillation residual liquid, thus reach energy-conserving and environment-protective, the object reduced costs.Wherein, when the first rectifying purification process is that when utilizing the first rectifying tower of series connection recited above, Second distillation column and the 3rd rectifying tower to carry out, the first distillation residual liquid is the raffinate of discharging bottom Second distillation column.
S300: disproportionation reaction
Then, described purified trichlorosilane generation disproportionation reaction is made, to obtain the disproportionation reaction product comprising silicon tetrachloride and silane.Wherein, the chemical reaction that this step relates generally to is: 4SiHCl 3---SiH 4+ 3SiCl 4.
According to embodiments of the invention, the condition of disproportionation reaction is not particularly limited, as long as can carry out the disproportionation reaction of trichlorosilane safely, effectively obtains above-mentioned disproportionation reaction product.According to concrete examples more of the present invention, described disproportionation reaction is at 50 ~ 80 degrees Celsius, carries out under the condition of 0.2 ~ 0.6MPa.Thus, production safety, and power consumption less, production cost is low, disproportionation reaction efficiency is high, effective, is conducive to the carrying out of subsequent step.
In addition, the device carrying out disproportionation reaction is also not particularly limited, as long as can ensure production safety, carry out efficiently.According to embodiments of the invention, described disproportionation reaction is carried out in disproportionation reactor, and described disproportionation reactor may further include: disproportionation reactor body, trichlorosilane opening for feed and disproportionation reaction product discharge mouth.According to concrete examples more of the present invention, in above-mentioned disproportionation reactor body, limit disproportionation reaction space, and be provided with catalyst layer in described disproportionation reaction space; Described trichlorosilane opening for feed is arranged on the below of described catalyst layer, for supplying trichlorosilane in described disproportionation reaction space; Described disproportionation reaction product discharge mouth is arranged on the top of described catalyst layer, for the formed disproportionation reaction product comprising silicon tetrachloride and silane is discharged described disproportionation reactor.Thus, disproportionation reaction efficiency is high, effective, and production safety, power consumption less, cost is low, the carrying out that be conducive to subsequent step.
S400: the second rectifying purification process
Next, the second rectifying purification process is carried out to described disproportionation reaction product, to obtain silane gas and silicon tetrachloride.
According to embodiments of the invention, device and the required condition of carrying out the second rectifying purification process are not particularly limited.According to concrete examples more of the present invention, described second rectifying purification process is carried out in low-temperature fractionating tower, and wherein, the temperature in described low-temperature fractionating tower is-60 ~-80 degrees Celsius, and pressure is 0.6 ~ 1.0MPa, and reflux ratio is 5 ~ 20:1.Thereby, it is possible to guarantee production safety, and power consumption less, production cost is low, rectifying purification efficiency is high, effective, is conducive to the carrying out of subsequent step.
Wherein, for the residual silicon tetrachloride liquor produced in the second rectifying purification step, can be further processed.According to embodiments of the invention, residual silicon tetrachloride liquor is by process, and the silicon tetrachloride of acquisition is used for described chlorine hydrogenation building-up reactions.Thus, effectively achieve the recycle of residual silicon tetrachloride liquor, and reduce the dispensing of chlorine hydrogenation building-up reactions raw material, thus can energy-conserving and environment-protective be realized, the object reduced costs.
S500: pyrolytic reaction
Then, make the silane gas of above-mentioned acquisition, in reduction furnace, pyrolytic reaction occur, wherein, be provided with the carrier of silicon core as crystal deposition in described reduction furnace, to obtain polysilicon.Wherein, the chemical reaction that this step relates generally to is: SiH 4---Si+2H 2.
According to embodiments of the invention, the described silane gas obtained in previous step is gathered storage in liquid form, and before entering in reduction furnace pyrolytic reaction occurs, in advance the silane of described liquid form is carried out vaporization process in vaporizer.Thus, be convenient to the transport of silane gas, and be conducive to pyrolytic reaction and carry out, and then effectively can prepare polysilicon, and cost is low, need to lack, energy-conserving and environment-protective, and pyrolytic reaction efficiency is high.
According to embodiments of the invention, the type of the reduction furnace that pyrolytic reaction can adopt is not particularly limited.According to concrete examples more of the present invention, described reduction furnace is bell-jar reduction furnace.Thus, pyrolytic reaction efficiency is high, effective, and the electronic-grade polycrystalline silicon purity prepared is high.
In addition, the temperature in reduction furnace in the quantity of silicon rod and reduction furnace, pressure condition are also not particularly limited, and carry out as long as be conducive to pyrolytic reaction.According to embodiments of the invention, in described reduction furnace, be provided with 12,24 or 36 pairs of silicon rods.Thus, silicon core can be adopted as carrier.Further, according to embodiments of the invention, in reduction furnace, be also provided with the cooling jacket consistent with silicon core logarithm.Thus, be conducive to silane gas checking solution deposition, prepare high-purity electronic-grade polycrystalline silicon.According to other embodiments of the present invention, the temperature in described reduction furnace is 750 ~ 900 degrees Celsius, and pressure is 0.15 ~ 0.30MPa.Thus, pyrolytic reaction efficiency is high, effective, and reaction safety, the electronic-grade polycrystalline silicon purity prepared is high.
Wherein, the reduction tail gas produced can also be further processed in pyrolytic reaction, to carry out recycle, wherein, the method that reduction tail gas processes be not particularly limited.According to embodiments of the invention, may further include: being carried out by the reduction tail gas of pyrolytic reaction being compressed to pressure is 6.0 ~ 10.0MPa; Be-100 ~-120 degrees Celsius by reduction tail gas condensing to the temperature through overdraft, silane gas is condensed into silane liquid, and obtain hydrogen; And described hydrogen is used for described chlorine hydrogenation building-up reactions.Thereby, it is possible to effectively process reduction tail gas, realize non-pollution discharge, ensure cleaner production, and realize the cycling and reutilization of reduction tail gas, thus reach energy-conserving and environment-protective, the object reduced costs.
In addition, contain chlorosilane to what produce in each step but also can not be further processed containing the tail gas of silane, to carry out cycling and reutilization, wherein, the method for carrying out processing is not particularly limited.According to embodiments of the invention, may further include: by produce in each step containing chlorosilane but not carry out being compressed to pressure containing the tail gas of silane be 0.25 ~ 0.50MPa, and be cooled to the temperature of-15 ~-30 degrees Celsius further, to obtain chlorosilane liquid produced and residual gas; Described chlorosilane liquid produced is carried out described first rectifying purification process; Described residual gas is carried out drip washing, so that the gas obtained through drip washing and washing water; And utilize alkali lye to neutralize described washing water, press filtration is carried out, so that in obtaining and water and filter residue to liquid after neutralization.Thereby, it is possible to effectively contain chlorosilane to what produce in each step but do not process containing the tail gas of silane, realize non-pollution discharge, ensure cleaner production, and realize the cycling and reutilization of tail gas, thus reach energy-conserving and environment-protective, the object reduced costs.Wherein, also can recycle with water in above-mentioned, according to embodiments of the invention, be used for carrying out drip washing to described residual gas with water in described.Thereby, it is possible to by and water carry out recycle, thus reduce production cost, and realize non-pollution discharge, ensure cleaner production.
According to other embodiments of the present invention, polysilicon method of preparing of the present invention can further include: the silicon tetrachloride being separated acquisition in intermediate steps is returned S100(chlorine hydrogenation building-up reactions), it is made to participate in chlorine hydrogenation building-up reactions, and then enter and of the present inventionly prepare in the processing step of the method for polysilicon, carry out sequential loop.Thereby, it is possible to realize the production object of economy, environmental protection.
Contriver is surprised to find, utilize polysilicon method of preparing of the present invention effectively can prepare electronic-grade polycrystalline silicon, and the method technique is simple, safety, energy-conserving and environment-protective, cost are low, and the polysilicon purity of producing is high, the tail gas produced and waste residue can meet the requirement of environmental protections, are electronic-grade polycrystalline silicon process for cleanly preparing.
In addition, according to some embodiments of the present invention, with reference to Fig. 2, polysilicon method of preparing of the present invention can also comprise the following steps:
(a) chlorine hydrogenation synthesis step: adopt silica flour, hydrogen and supplementary silicon tetrachloride (or hydrogenchloride) and come from subsequent step (b), the silicon tetrachloride of (c) is raw material, control temperature 500 ~ 550 degree, pressure 1.5 ~ 3.5MPa, silicon tetrachloride and hydrogen proportioning 1:2 ~ 1:5, under Ni-based or copper-base catalyst effect, be trichlorosilane by converting silicon tetrachloride in fixed bed (or fluidized-bed) hydrogenation reactor, for step (c) provides trichlorosilane raw material.Main reaction is: 3SiCl 4+ 2H 2+ Si---4SiHCl 3.
(b) trichlorosilane rectification and purification step: the chlorosilane mixed solution coming from step (a) enters in three rectifying tower of series connection, controls the first rectifying tower temperature 60 ~ 100 DEG C, pressure 0.2MPa, reflux ratio 10:1 ~ 50:1; Control Second distillation column temperature 100 ~ 140 DEG C, pressure 0.5MPa, reflux ratio 20:1 ~ 50:1; Control the 3rd rectifying tower temperature 60 ~ 80 DEG C, pressure 0.2MPa, reflux ratio 20:1 ~ 50:1.Obtain the trichlorosilane that purity is more than 99%, silicon tetrachloride returns step (a).
C () trichlorosilane disproportionation step: the trichlorosilane coming from step (b), passes in disproportionation reactor, under catalyst action, control reactor temperature 50 ~ 80 DEG C, pressure 0.2 ~ 0.6MPa, makes trichlorosilane be converted into silane gas.Principal reaction equation is: 4SiHCl 3---SiH 4+ 3SiCl 4.
(d) silane gas low temperature fractionation step: the silane gas containing impurity coming from step (c), enters in low-temperature fractionating tower, temperature-60 ~-80 DEG C in control tower, pressure 0.60 ~ 1.0MPa, reflux ratio 5:1 ~ 20:1.Thus the silane purity of overhead extraction can reach 9N ~ 11N, mainly eliminates the impurity compounds such as B, P, Al, C.This part silane gas is with liquid mode extraction and store.
E () silane gas Pintsch process prepares polysilicon step: the silane gas from step (d) enters in bell-jar reduction furnace, control internal temperature 750 ~ 900 DEG C, 0.15MPa ~ 0.30MPa, make silane gas cracking be deposited on silicon core, the hydrogen of generation is back to step (a) recycle.Silane gas cracking transformation efficiency can reach more than 90%.Principal reaction equation is: SiH 4---Si+2H 2.
(f) raffinate recycling step: be mainly rich in silicon tetrachloride and a small amount of solid residue from the raffinate of discharging bottom the first distillation residual liquid produced in step (b) and Second distillation column, by it after the process such as flash distillation, dedusting and condensation, silicon tetrachloride is reclaimed, and solid residue drains into step (h) process.
(g) tail gas recycle step: main process two portions tail gas, the tail gas being rich in chlorosilane that a part is discharged for step (a) and (b), (c), (f), after overdraft deep cooling, reclaim to step (b) after most of chlorosilane is separated, a small amount of tail gas containing chlorosilane is after tail gas eluting column hydrolysis treatment is qualified, be disposed in air, and hydrolysis residue is processed to step (h); Another part is the reduction tail gas from step (e), this partial tail gas contains hydrogen and silane gas, after overdraft deep cooling, hydrogen is separated and is supplied to step (a) recycle, and silane gas is condensed into liquid after overflash to step (e) recycle.
(h) residue neutralization procedure: come from the solid residue of step (f) and the hydrolysis residue of step (g) by aforementioned, add that neutralizing agent (calcium hydroxide alkali lye) carries out neutralizing, press filtration process, then qualified solid slag is carried out environment protection emission, and waste water is back to the tail gas eluting column recycle described in step (g).
Describe the method preparing polysilicon of the present invention in detail with upper part, in order to the method can be understood better, below the equipment can implementing the method has been described in detail again.
Thus, according to a further aspect in the invention, the invention allows for a kind of equipment for the preparation of polysilicon.According to embodiments of the invention, with reference to Fig. 3, the equipment for the preparation of polysilicon of the present invention comprises: chlorine hydrogenation synthetic reaction device 1, first rectifying purification devices 2, disproportionation reaction device 3, second rectifying purification devices 4 and pyrolytic reaction device 5.According to some embodiments of the invention, described chlorine hydrogenation synthetic reaction device 1 is for making silica flour, hydrogen and being selected from least one generation chlorine hydrogenation building-up reactions of hydrogenchloride and silicon tetrachloride, to obtain trichlorosilane; Described first rectifying purification devices 2 is connected with described chlorine hydrogenation synthetic reaction device 1, for carrying out the first rectifying purification process to described trichlorosilane, to obtain purified trichlorosilane and the first distillation residual liquid; Described disproportionation reaction device 3 is connected with described first rectifying purification devices 2, for making described purified trichlorosilane generation disproportionation reaction, to obtain the disproportionation reaction product comprising silicon tetrachloride and silane; Described second rectifying purification devices 4 is connected with described disproportionation reaction device 3, for carrying out the second rectifying purification process to described disproportionation reaction product, to obtain silane gas and silicon tetrachloride; Described pyrolytic reaction device 5 is connected with described second rectifying purification devices 4, for making described silane gas generation pyrolytic reaction, to obtain polysilicon.Contriver is surprised to find, utilize this equipment effectively can prepare electronic-grade polycrystalline silicon, and the technique that this equipment relates to is simple, safety, energy-conserving and environment-protective, cost are low, and the polysilicon purity of producing is high, the tail gas produced and waste residue can meet the requirement of environmental protections, are electronic-grade polycrystalline silicon process for cleanly preparing.
More easily understand to make those skilled in the art and of the present inventionly prepare the method for polysilicon and applicable equipment thereof, below in conjunction with Fig. 3-Figure 11, the structure and function of the Whole Equipment for the preparation of polysilicon of the present invention and local thereof is described in detail.
Wherein, it should be noted that, each accompanying drawing and " STC " described herein refer to silicon tetrachloride, and " TCS " refers to trichlorosilane.
According to embodiments of the invention, in the chlorine hydrogenation synthetic reaction device 1 shown in Fig. 3, the condition of chlorine hydrogenation building-up reactions is not particularly limited.According to concrete examples more of the present invention, nickel-base catalyst or copper-based catalysts is provided with in chlorine hydrogenation synthetic reaction device 1, so that when there is nickel-base catalyst or copper-based catalysts, making to comprise silicon tetrachloride and contacting with silica flour with the gaseous mixture of hydrogen, described chlorine hydrogenation building-up reactions occurs.Wherein, the chemical reaction related generally to is: 3SiCl 4+ 2H 2+ Si---4SiHCl 3.Thereby, it is possible to effectively improve the efficiency of chlorine hydrogenation building-up reactions, be conducive to subsequent step and carry out.Wherein, the ratio comprising silicon tetrachloride and hydrogen in the gaseous mixture of silicon tetrachloride and hydrogen is not particularly limited.According to embodiments of the invention, described in comprise in the gaseous mixture of silicon tetrachloride and hydrogen, the mol ratio of silicon tetrachloride and hydrogen is 1:2 ~ 5.Thus, the efficiency of chlorine hydrogenation building-up reactions significantly improves, and is conducive to subsequent step and carries out.
According to embodiments of the invention, the temperature and pressure carrying out chlorine hydrogenation building-up reactions in chlorine hydrogenation synthetic reaction device 1 is not particularly limited, as long as can effectively react, obtains trichlorosilane.According to some embodiments of the present invention, described chlorine hydrogenation building-up reactions is carried out at the temperature of 500 ~ 550 degrees Celsius.According to other embodiments of the present invention, described chlorine hydrogenation building-up reactions is at 500 ~ 550 degrees Celsius, carries out under the condition of 1.5 ~ 3.5MPa.Thus, the efficiency of chlorine hydrogenation building-up reactions is high, is conducive to subsequent step and carries out.
In addition, the source of the silicon tetrachloride adopted in chlorine hydrogenation synthetic reaction device 1 is not particularly limited, and can directly provide, and also can be separated from the reaction product of subsequent step or waste liquid and obtain.According to embodiments of the invention, described silicon tetrachloride derive from described disproportionation reaction device 3 at least partially.Thus, carry out recycle by the silicon tetrachloride in disproportionation reaction product, thus can energy-conserving and environment-protective have been realized, the object reduced costs.
According to embodiments of the invention, described second rectifying purification devices 4 is connected with described chlorine hydrogenation synthesizer 1 (not shown), the silicon tetrachloride obtained in described second rectifying purification devices is used for described chlorine hydrogenation building-up reactions.Thereby, it is possible to the silicon tetrachloride produced in the second rectifying purification devices is carried out recycle, thus energy-conserving and environment-protective can be realized, the object reduced costs.
According to embodiments of the invention, with reference to Fig. 4, the equipment for the preparation of polysilicon of the present invention may further include: Liqiud-gas mixing device 6, heat exchanger 7 and resistance heater 8.According to embodiments of the invention, described Liqiud-gas mixing device 6, for silicon tetrachloride liquid being mixed with hydrogen, obtains gas-liquid mixture; Described heat exchanger 7 is connected with described chlorine hydrogenation synthetic reaction device 1 with described Liqiud-gas mixing device 6 respectively, for utilizing chlorine hydrogenation building-up reactions product to carry out heat exchange process to described gas-liquid mixture, to obtain through the gas-liquid mixture of preheating with through overcooled chlorine hydrogenation building-up reactions product; Described resistance heater 8 is connected with described chlorine hydrogenation synthetic reaction device 1 with described heat exchanger 7 respectively, for heating the gas-liquid mixture through preheating, to comprise the gaseous mixture of silicon tetrachloride and hydrogen described in obtaining, and the described gaseous mixture comprising silicon tetrachloride and hydrogen be supplied to described chlorine hydrogenation synthetic reaction device 1.Thus, can realize when consuming energy minimum the cooling of chlorine hydrogenation building-up reactions product simultaneously and preheating be carried out to gas-liquid mixture, and can effectively obtain the gaseous mixture comprising silicon tetrachloride and hydrogen, for in following cycle, chlorine hydrogenation building-up reactions is supplied raw materials, thus effectively can realize energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, with reference to Fig. 4, the equipment for the preparation of polysilicon of the present invention may further include: cleaning apparatus 9 and the first condensing works 10.According to embodiments of the invention, cleaning apparatus 9 is connected with heat exchanger 7, to carry out dust removal process by described through overcooled chlorine hydrogenation building-up reactions product; First condensing works 10 is connected with the first rectifying purification devices 2 with cleaning apparatus 9 respectively, for the chlorine hydrogenation building-up reactions product through dust removal process is carried out condensation, so that recover hydrogen and chlorosilane liquid produced respectively, described chlorosilane liquid produced comprises trichlorosilane and silicon tetrachloride, and described chlorosilane liquid produced is supplied to described first rectifying purification devices 2 and is used for described first rectifying purification process.Thus, through overcooled chlorine hydrogenation building-up reactions product by after above-mentioned process, chlorosilane liquid produced and hydrogen can be obtained, and chlorosilane liquid produced and hydrogen can be supplied to the related device of equipment of the present invention respectively, carry out recycle again, thus effectively can realize energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, described first condensing works 10 is connected with described chlorine hydrogenation synthetic reaction device 1, for described hydrogen being supplied to described chlorine hydrogenation synthetic reaction device 1.Thereby, it is possible to hydrogen is recycled, for the chlorine hydrogenation building-up reactions of carrying out in chlorine hydrogenation synthetic reaction device is supplied raw materials, energy-conserving and environment-protective, and can production cost be reduced.
According to embodiments of the invention, described first rectifying purification devices 2 comprises multiple rectifying tower of series connection, and wherein, each rectifying tower all arranges opening for feed and discharge port from bottom to top respectively along the axial direction due of described rectifying tower.Move from bottom to top thereby, it is possible to be used in the axial direction due that the material carrying out rectification process is along each rectifying tower, thus effectively can improve the efficiency of rectifying purification process in the first rectifying purification devices, be conducive to the carrying out of subsequent step.
According to concrete examples more of the present invention, with reference to Fig. 5, the first rectifying purification devices 2 comprises the first rectifying tower 21 of series connection, Second distillation column 22 and the 3rd rectifying tower 23.Thereby, it is possible to ensure the production cost that is suitable for and higher rectifying purification efficiency simultaneously, be conducive to the carrying out of subsequent step.Wherein, the reaction conditions carried out in the first rectifying purification devices 2 in the condition of the first rectifying purification process and each rectifying tower is not particularly limited, as long as can by effective for trichlorosilane purifying.According to embodiments of the invention, the rectification temperature of described first rectifying tower 21 is 60 ~ 100 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 10 ~ 50:1; The rectification temperature of described Second distillation column 22 is 100 ~ 140 degrees Celsius, and pressure is 0.5MPa, and reflux ratio is 20 ~ 50:1; The rectification temperature of described 3rd rectifying tower 23 is 60 ~ 80 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 20 ~ 50:1.Thereby, it is possible to ensure safety in production, and power consumption less, production cost is low, rectifying purification efficiency is high, effective, is conducive to the carrying out of subsequent step.
Wherein, the chemical reaction related in disproportionation reaction device 3 is mainly: 4SiHCl 3---SiH 4+ 3SiCl 4.And according to embodiments of the invention, the condition of carrying out disproportionation reaction in disproportionation reaction device 3 is not particularly limited, as long as the disproportionation reaction of trichlorosilane can be carried out safely, effectively obtain disproportionation reaction product.According to concrete examples more of the present invention, in described disproportionation reaction device 3, described disproportionation reaction is at 50 ~ 80 degrees Celsius, carries out under the condition of 0.2 ~ 0.6MPa.Thus, production safety, and power consumption less, production cost is low, disproportionation reaction efficiency is high, effective, is conducive to the carrying out of subsequent step.
According to embodiments of the invention, disproportionation reaction device 3 is disproportionation reactor, and with reference to Fig. 6, described disproportionation reactor comprises further: disproportionation reactor body 31, trichlorosilane opening for feed 34 and disproportionation reaction product discharge mouth 35.Wherein, according to embodiments of the invention, in described disproportionation reactor body 31, limit disproportionation reaction space 32, and be provided with catalyst layer 33 in described disproportionation reaction space 32; Described trichlorosilane opening for feed 34 is arranged on the below of described catalyst layer 33, for supplying purified trichlorosilane in described disproportionation reaction space 32; Described disproportionation reaction product discharge mouth 35 is arranged on the top of described catalyst layer 33, for the formed disproportionation reaction product comprising silicon tetrachloride and silane is discharged described disproportionation reactor.Thus, disproportionation reaction efficiency is high, effective, and production safety, power consumption less, cost is low, the carrying out that be conducive to subsequent step.
According to embodiments of the invention, the type of the second rectifying purification devices 4 and the condition of wherein carrying out processing are not particularly limited.According to concrete examples more of the present invention, with reference to Fig. 7, described second rectifying purification devices 4 is low-temperature fractionating tower, and wherein, the temperature in described low-temperature fractionating tower is-60 ~-80 degrees Celsius, and pressure is 0.6 ~ 1.0MPa, and reflux ratio is 5 ~ 20:1.Thus, production safety, and power consumption less, production cost is low, rectifying purification efficiency is high, effective, is conducive to the carrying out of subsequent step.
According to embodiments of the invention, with reference to Fig. 8, equipment for the preparation of polysilicon of the present invention may further include vaporization process device 11, described vaporization process device 11 is connected with described pyrolytic reaction device 5 with described second rectifying purification devices 4 respectively, for before pyrolytic reaction, in advance the silane gas stored in liquid form is carried out vaporization process.Thus, be conducive to the carrying out of pyrolytic reaction in pyrolytic reaction device, thus effectively can prepare polysilicon, and cost is low, needing can be few, energy-conserving and environment-protective, and pyrolytic reaction efficiency is high.
According to embodiments of the invention, the type of pyrolytic reaction device is not particularly limited.According to concrete examples more of the present invention, described pyrolytic reaction device 5 is reduction furnace, is provided with the carrier of silicon core as crystal deposition in described reduction furnace.Thus, pyrolytic reaction efficiency is high, effective, and the electronic-grade polycrystalline silicon purity prepared is high.According to other embodiments of the present invention, with reference to Fig. 8, described reduction furnace is bell-jar reduction furnace.Thus, pyrolytic reaction efficiency is high, effective.In addition, the temperature in reduction furnace in the quantity of silicon rod and reduction furnace, pressure condition are also not particularly limited, and carry out as long as be conducive to pyrolytic reaction.According to embodiments of the invention, in described reduction furnace, be provided with 12,24 or 36 pairs of silicon rods.Thus, silicon core can be adopted as carrier.Further, according to embodiments of the invention, in reduction furnace, be also provided with the cooling jacket consistent with silicon core logarithm.Thus, be conducive to silane gas checking solution deposition, prepare high-purity electronic-grade polycrystalline silicon.According to other embodiments of the present invention, the temperature in described reduction furnace is 750 ~ 900 degrees Celsius, and pressure is 0.15 ~ 0.30MPa.Thus, pyrolytic reaction efficiency is high, effective, and reaction safety, the electronic-grade polycrystalline silicon purity prepared is high.
According to embodiments of the invention, with reference to Fig. 9, the equipment for the preparation of polysilicon of the present invention can further include: flash distillation treatment unit 12, second condensing works 13 and residue treatment device 14.According to embodiments of the invention, as shown in Figure 9, described flash distillation treatment unit 12 is connected with described first rectifying purification devices 2, for described first distillation residual liquid is carried out flash distillation process, to obtain silicon tetrachloride gas and solid residue; Described second condensing works 13 is connected with described Liqiud-gas mixing device 6 with described flash distillation treatment unit 12 respectively, for described silicon tetrachloride gas is carried out condensation process, to obtain silicon tetrachloride liquid, and described silicon tetrachloride liquid is supplied to described Liqiud-gas mixing device 6, for described chlorine hydrogenation building-up reactions; Described residue treatment device 14 is connected with described flash distillation treatment unit 12, for described solid residue being carried out successively alkali lye hydrolysis neutralizing treatment and press filtration process.Thereby, it is possible to effectively realize the cycling and reutilization of the first distillation residual liquid, thus reach energy-conserving and environment-protective, the object reduced costs.Wherein, it should be noted that, when the first rectifying purification devices 2 as shown in Figure 5, for series connection the first rectifying tower, Second distillation column and the 3rd rectifying tower time, the first distillation residual liquid is the raffinate of discharging bottom Second distillation column.
According to embodiments of the invention, with reference to Figure 10, equipment for the preparation of polysilicon of the present invention may further include: the first compression set 15 and the 3rd condensing works 16, according to embodiments of the invention, described first compression set 15 is connected with described pyrolytic reaction device 5, is 6.0 ~ 10.0MPa for being carried out by the reduction tail gas of pyrolytic reaction being compressed to pressure; Described 3rd condensing works 16 is connected with described vaporization process device 11 with described first compression set 15, described Liqiud-gas mixing device 6, for being-100 ~-120 degrees Celsius by reduction tail gas condensing to the temperature through overdraft, silane gas be condensed into silane liquid and obtain hydrogen, and described silane liquid is supplied to described vaporization process device 11, described hydrogen is supplied to described Liqiud-gas mixing device 6, for described chlorine hydrogenation building-up reactions.Thereby, it is possible to effectively process the reduction tail gas produced in pyrolytic reaction device, realize non-pollution discharge, ensure cleaner production, and realize the cycling and reutilization of reduction tail gas, thus reach energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, with reference to Figure 11, the equipment for the preparation of polysilicon of the present invention can further include: the second compression set 17, the 4th condensing works 18, elution device 19 and washing water treatment unit (not shown).Wherein, according to embodiments of the invention, described second compression set 17 for by produce in each device containing chlorosilane but not carry out being compressed to pressure containing the tail gas of silane be 0.25 ~ 0.50MPa; Described 4th condensing works 18 is connected with described first rectifying purification devices 2 with described second compression set 17 respectively, for by through overdraft containing chlorosilane but not to be cooled to temperature containing the tail gas of silane be-15 ~-30 degrees Celsius, to obtain chlorosilane liquid produced and residual gas, and described chlorosilane liquid produced is supplied to described first rectifying purification devices 2 and is used for described first rectifying purification process; Described elution device 19 is connected with described 4th condensing works 18, for described residual gas is carried out drip washing, so that the gas obtained through drip washing and washing water; Described washing water treatment unit is connected with described elution device 19, for utilizing alkali lye to neutralize described washing water, and carries out press filtration, so that in obtaining and water and filter residue to liquid after neutralization.Thereby, it is possible to effectively contain chlorosilane to what produce in each device but do not process containing the tail gas of silane, realize non-pollution discharge, ensure cleaner production, and realize the cycling and reutilization of tail gas, thus reach energy-conserving and environment-protective, the object reduced costs.
According to embodiments of the invention, can also by pipeline by described and water supply to described elution device 19, for carrying out drip washing to described residual gas.Thereby, it is possible to by and water carry out recycle, thus reduce production cost, and realize non-pollution discharge, ensure cleaner production.
Below by specific embodiment, the present invention will be described, it should be noted that these embodiments are only used to illustration purpose, and can not be construed to limitation of the present invention by any way.In addition, in the examples below that if not otherwise specified, then adopted equipment and material are commercially available.
Embodiment 1
Utilize the equipment shown in Fig. 3-Figure 11, see figures.1.and.2 shown flow process, according to the method for the preparation of polysilicon of the present invention, prepares trichlorosilane, and then prepare polysilicon according to following process:
(1) chlorine hydrogenation synthesis step: from the silicon tetrachloride of following step (2), step (3) with hydrogen after gas liquid mixer proportioning mixes, with hydrogenation reactor exit gas through heat exchange, enter resistive heater heats to certain temperature, this mixed gas directly enters in hydrogenation reactor, control temperature 500 ~ 550 degree, pressure 1.5 ~ 3.5MPa, silicon tetrachloride and hydrogen proportioning 1:2 ~ 1:5, under Ni-based or copper-base catalyst effect, react with silica flour.Reacted gas after efficient gas-solid fly-ash separator in gas-gas heat exchanger with from the gas converting heat of gas liquid mixer, reactant gases after cooling enters bubbling gas wash tower, integrated condenser is entered by after further for solid dust dedusting, chlorosilane condensate enters liquid collection tank, and Hydrogen Separation out enters gas liquid mixer recycle through compressor.
(2) chlorosilane purification step: the difference utilizing trichlorosilane and silicon tetrachloride boiling point, has the principle of different volatility at the same temperature, adopts three towers (i.e. rectifying tower) purify trichlorosilane.Raffinate is discharged from Second distillation column, through purification TCS from the 3rd rectifying tower top extraction, the STC of recovery discharges from the 3rd rectifier bottoms the gas liquid mixer be back to step (1).Obtain the trichlorosilane that purity is more than 99%.
(3) trichlorosilane disproportionation step: the temperature 50 ~ 80 DEG C controlling disproportionation reactor, pressure 0.2 ~ 0.6MPa, under catalyst action, passes in reactor by the TCS of the 3rd rectifying tower top extraction, and disproportionation reaction occurs, and produces silane gas.
(4) silane gas low temperature fractionation step: the difference utilizing the impurity such as B, P, C, chlorosilane and silane gas boiling point, has the principle of different volatility at the same temperature, adopts low-temperature fractionating tower purification silane gas.The silane gas coming from step (3) enters low-temperature fractionating tower, temperature-60 ~-80 DEG C in control tower, pressure 0.60 ~ 1.0MPa, reflux ratio 5:1 ~ 20:1.Can 9N-11N be reached from the silane purity of overhead extraction, mainly eliminate the impurity compounds such as B, P, Al, C.Go step (5) from the high purity silane gas of overhead extraction, impurity etc. are discharged at the bottom of tower.
(5) silane gas high temperature pyrolysis step: the high purity silane gas from step (4) enters vaporizer, is vaporizated into gas and enters bell-jar reduction furnace, and inside arranges the carrier of silicon core as crystal deposition, can be 12 to rod, 24 to rod or 36 to excellent reduction furnace.Control internal temperature 750 ~ 900 DEG C, under 0.15MPa ~ 0.30MPa, silane gas cracking is deposited on silicon core, generates bar-shaped electronic-grade polycrystalline silicon.Step (7) process is back to after the reduction tail gas recycle produced.Wherein, silane gas cracking transformation efficiency can reach more than 90%.
(6) raffinate recycling step: the raffinate of discharging from step (2) the 3rd rectifier bottoms, is rich in silicon tetrachloride and a small amount of solid residue, evaporates through flash tank, flash tank is with whipping appts, axle and body adopt mechanical seal, and its outside is steam jacket, adopt steam heating.The silicon tetrachloride gas be evaporated from flash tank enters follow-up water cooler condensation, and silicon tetrachloride liquid is back to gas liquid mixer in step (1).Solid residue through with alkali lye be hydrolyzed neutralize after in press filtration is harmless and slag discharge.
(7) tail gas recycle step: whole system is divided into two strands of tail gas.Tail gas 1 is the tail gas containing chlorosilane, wherein not containing silane gas.This partial tail gas is through compressor compresses to 0.25 ~ 0.50MPa, enter deep freezer, control cryogenic temperature-15 ~-30 DEG C, chlorosilane condensate gets off to be back to step (2), the uncooled gas got off enters tail gas eluting column, the acceptable gas emptying after drip washing, in washing water and alkali lye and rear press filtration, filter residue is arranged outward, and Zhong Heshui returns to eluting column recycle; Tail gas 2 is for being rich in the gas of hydrogen and a small amount of silane gas, namely from bell-jar reduction furnace reduction tail gas out, this portion gas is through compressor compresses to 6.0 ~ 10.0MPa, enter deep freezer and be condensed to-100 ~-120 DEG C, silane gas is condensed into liquid and enters vaporizer, and Hydrogen Separation out enters chlorine hydrogenation synthetic reaction device.
In the description of this specification sheets, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalents thereof.

Claims (20)

1. prepare a method for trichlorosilane, it is characterized in that, comprising:
Make silica flour, hydrogen and be selected from least one generation chlorine hydrogenation building-up reactions of hydrogenchloride and silicon tetrachloride, to obtain trichlorosilane,
When there is nickel-base catalyst or copper-based catalysts, make to comprise silicon tetrachloride to contact with silica flour with the gaseous mixture of hydrogen, there is described chlorine hydrogenation building-up reactions, wherein, the described gaseous mixture comprising silicon tetrachloride and hydrogen obtains through the following steps: silicon tetrachloride liquid mixed with hydrogen, obtain gas-liquid mixture; Chlorine hydrogenation building-up reactions product is utilized to carry out heat exchange process to described gas-liquid mixture, to obtain through the gas-liquid mixture of preheating with through overcooled chlorine hydrogenation building-up reactions product; And utilize resistance heater, and the gas-liquid mixture through preheating is heated, to comprise the gaseous mixture of silicon tetrachloride and hydrogen described in obtaining,
First rectifying purification process is carried out to described trichlorosilane, to obtain purified trichlorosilane and the first distillation residual liquid, wherein, described first rectifying purification process utilizes multiple rectifying tower of series connection to carry out, in each rectifying tower, the axial direction due that material for carrying out rectification process is along described rectifying tower moves from bottom to top, described first rectifying purification process is the first rectifying tower utilizing series connection, Second distillation column and the 3rd rectifying tower carry out, the rectification temperature of described first rectifying tower is 60 ~ 100 degrees Celsius, pressure is 0.2MPa, reflux ratio is 10 ~ 50:1, the rectification temperature of described Second distillation column is 100 ~ 140 degrees Celsius, and pressure is 0.5MPa, and reflux ratio is 20 ~ 50:1, the rectification temperature of described 3rd rectifying tower is 60 ~ 80 degrees Celsius, and pressure is 0.2MPa, and reflux ratio is 20 ~ 50:1.
2. method according to claim 1, is characterized in that, described in comprise in the gaseous mixture of silicon tetrachloride and hydrogen, the mol ratio of silicon tetrachloride and hydrogen is 1:2 ~ 5.
3. method according to claim 1, is characterized in that, described chlorine hydrogenation building-up reactions is carried out at the temperature of 500 ~ 550 degrees Celsius.
4. method according to claim 3, is characterized in that, described chlorine hydrogenation building-up reactions is at 500 ~ 550 degrees Celsius, carries out under the condition of 1.5 ~ 3.5MPa.
5. method according to claim 1, is characterized in that, obtaining by carrying out disproportionation reaction to trichlorosilane at least partially of described silicon tetrachloride.
6. method according to claim 1, is characterized in that, comprises further:
Dust removal process is carried out through overcooled chlorine hydrogenation building-up reactions product by described;
Chlorine hydrogenation building-up reactions product through dust removal process is carried out condensation, so that difference recover hydrogen and chlorosilane liquid produced, described chlorosilane liquid produced comprises trichlorosilane and silicon tetrachloride; And
Described chlorosilane liquid produced is used for described first rectifying purification process.
7. method according to claim 6, is characterized in that, is returned by described hydrogen for carrying out described chlorine hydrogenation building-up reactions.
8. method according to claim 1, is characterized in that, comprises further:
Described first distillation residual liquid is carried out flash distillation process, to obtain silicon tetrachloride gas and solid residue;
Described silicon tetrachloride gas is carried out condensation process, to obtain silicon tetrachloride liquid;
Described silicon tetrachloride liquid is used for described chlorine hydrogenation building-up reactions; And
Described solid residue is carried out successively alkali lye hydrolysis neutralizing treatment and press filtration process.
9. utilize trichlorosilane that described in any one of claim 1-8, method obtains preparing the purposes in polysilicon, it is characterized in that, described purposes is realized by following steps:
Make described purified trichlorosilane generation disproportionation reaction, to obtain the disproportionation reaction product comprising silicon tetrachloride and silane;
Second rectifying purification process is carried out to described disproportionation reaction product, to obtain silane gas and silicon tetrachloride; And
Make described silane gas, in reduction furnace, pyrolytic reaction occur, wherein, be provided with the carrier of silicon core as crystal deposition in described reduction furnace, to obtain polysilicon.
10. purposes according to claim 9, is characterized in that, described disproportionation reaction is at 50 ~ 80 degrees Celsius, carries out under the condition of 0.2 ~ 0.6MPa.
11. purposes according to claim 9, it is characterized in that, described disproportionation reaction is carried out in disproportionation reactor, described disproportionation reactor comprises further:
Disproportionation reactor body, limits disproportionation reaction space in described disproportionation reactor body, and is provided with catalyst layer in described disproportionation reaction space;
Trichlorosilane opening for feed, described trichlorosilane opening for feed is arranged on the below of described catalyst layer, for supplying purified trichlorosilane in described disproportionation reaction space; And
Disproportionation reaction product discharge mouth, described disproportionation reaction product discharge mouth is arranged on the top of described catalyst layer, for the formed disproportionation reaction product comprising silicon tetrachloride and silane is discharged described disproportionation reactor.
12. purposes according to claim 9, is characterized in that, described second rectifying purification process is carried out in low-temperature fractionating tower, wherein, temperature in described low-temperature fractionating tower is-60 ~-80 degrees Celsius, and pressure is 0.6 ~ 1.0MPa, and reflux ratio is 5 ~ 20:1.
13. purposes according to claim 9, it is characterized in that, the described silane gas that second rectifying purification process obtains is gathered storage in liquid form, and before entering in reduction furnace pyrolytic reaction occurs, in advance the silane of liquid form is carried out vaporization process in vaporizer.
14. purposes according to claim 9, is characterized in that, the silicon tetrachloride that the second rectifying purification process obtains is used for described chlorine hydrogenation building-up reactions.
15. purposes according to claim 9, is characterized in that, described reduction furnace is bell-jar reduction furnace.
16. purposes according to claim 15, is characterized in that, are provided with 12,24 or 36 pairs of silicon rods in described reduction furnace.
17. purposes according to claim 16, is characterized in that, the temperature in described reduction furnace is 750 ~ 900 degrees Celsius, and pressure is 0.15 ~ 0.30MPa.
18. purposes according to claim 9, is characterized in that, comprise further:
Being carried out by reduction tail gas in described reduction furnace being compressed to pressure is 6.0 ~ 10.0MPa;
Be-100 ~-120 degrees Celsius by reduction tail gas condensing to the temperature through overdraft, silane gas is condensed into silane liquid, and obtain hydrogen; And
Described hydrogen is used for described chlorine hydrogenation building-up reactions.
19. purposes according to claim 9, is characterized in that, comprise further:
By produce in each step containing chlorosilane but not carry out being compressed to pressure containing the tail gas of silane be 0.25 ~ 0.50MPa, and be cooled to the temperature of-15 ~-30 degrees Celsius further, to obtain chlorosilane liquid produced and residual gas;
Described chlorosilane liquid produced is carried out described first rectifying purification process;
Described residual gas is carried out drip washing, so that the gas obtained through drip washing and washing water; And
Utilize alkali lye to neutralize described washing water, press filtration is carried out, so that in obtaining and water and filter residue to liquid after neutralization.
20. purposes according to claim 19, is characterized in that, are used for carrying out drip washing to described residual gas in described with water.
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