CN103443386B - 形成多晶台和多晶元件的方法 - Google Patents
形成多晶台和多晶元件的方法 Download PDFInfo
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- CN103443386B CN103443386B CN201280011629.5A CN201280011629A CN103443386B CN 103443386 B CN103443386 B CN 103443386B CN 201280011629 A CN201280011629 A CN 201280011629A CN 103443386 B CN103443386 B CN 103443386B
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- polycrystalline table
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- brown polycrystalline
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000003054 catalyst Substances 0.000 claims abstract description 74
- 239000002245 particle Substances 0.000 claims abstract description 62
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 230000009467 reduction Effects 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 25
- 238000000605 extraction Methods 0.000 claims description 22
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 230000029087 digestion Effects 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 14
- 239000000284 extract Substances 0.000 claims description 8
- 230000035699 permeability Effects 0.000 claims description 8
- 230000003197 catalytic effect Effects 0.000 claims description 3
- 238000002386 leaching Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 35
- 229910003460 diamond Inorganic materials 0.000 description 21
- 239000010432 diamond Substances 0.000 description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 239000010941 cobalt Substances 0.000 description 10
- 229910017052 cobalt Inorganic materials 0.000 description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
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- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
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- 239000011195 cermet Substances 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002905 metal composite material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910033181 TiB2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
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- 239000004567 concrete Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- -1 ramet (TaC) Chemical compound 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
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- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
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Abstract
形成多晶台的方法,其包括将包含超级磨料材料的多个粒子、包含硬质材料的基底和催化剂材料置于模具中。将该多个粒子在催化剂材料存在下部分烧结,以形成附着于基底端部的具有第一渗透性的半生多晶台。将该基底从该半生多晶台上除去,和将催化剂材料从该半生多晶台上除去。然后完全烧结该半生多晶台,以形成具有降低的、第二渗透性的多晶台。在将多晶台附着于基底的过程中形成了包括基本上完全浸提的半生多晶台的中间结构。该基本上完全浸提的半生多晶台包含多个超级磨料材料的相互键合的晶粒。
Description
优先权要求
本申请要求2011年3月4日提交的美国专利申请序列号13/040,861、名为“形成多晶台和多晶元件的方法和相关结构”的提交日权益。
技术领域
本发明的实施方案总体上涉及形成超级磨料材料多晶台的方法,形成超级磨料多晶元件的方法,和相关结构。具体地,本发明的实施方案涉及将完全浸提的或者基本上完全浸提的超级磨料材料多晶台附着于基底来形成多晶元件的方法,和与之有关的中间结构。
发明背景
用于在地下地层形成井筒的钻地工具可以包括多个固定在机身上的切割元件。例如,固定切削刃钻地旋转钻头(也称作“刮刀钻头”)包括多个切割元件,其固定附着于钻头的钻头体。类似地,牙轮钻地旋转钻头可以包括锥体,其安装到从钻头体的支架延伸的轴承销,以使得每个锥体都能够绕着它安装到其上的轴承销旋转。多个切割元件可以安装到钻头的每个锥体。
用于在这种钻地工具的切割元件经常包括多晶金刚石复合片(经常称作“PDC”)切割元件,也称作“刀具”,其是包括多晶金刚石(PCD)材料的切割元件,其特征是可以作为超级磨料或者超硬材料。这种多晶金刚石材料是如下来形成的:将相对小的合成的、天然的或者合成和天然金刚石晶粒或晶体的组合(称作“磨光粉”)在高温和高压条件下,在催化剂(例如钴、铁、镍或它们的合金和混合物)存在下烧结和结合在一起,来形成多晶金刚石材料层,也称作金刚石台。这些处理经常称作高温/高压(“HTHP”)处理。切割元件基底可以包含金属陶瓷材料,即陶瓷-金属复合材料,例如钴烧结碳化钨。在一些情况中,多晶金刚石台可以例如在HTHP烧结处理过程中,形成在元件上。在这种情况中,切割元件基底中的钴或其他催化剂材料可以在烧结过程中进入金刚石晶粒或晶体中,并且充当催化剂材料,用于由金刚石晶粒或晶体来形成金刚石台。在将晶粒或者晶体一起在HTHP处理中烧结之前,粉末化的催化剂材料还可以与金刚石晶粒或晶体混合。但是在其他方法中,该金刚石台可以与切割元件基底分别形成,随后附着其上。
为了减少与PDC切割元件中金刚石晶体的热膨胀差异和化学裂解有关的问题,已经开发了“热稳定的”多晶金刚石复合片(其也称作热稳定的产物或者“TSP”)。这种热稳定的多晶金刚石复合片可以通过将催化剂材料从金刚石台中的相互键合的晶粒之间的间隙中浸提出来而形成。但是,常规金刚石台会需要长至五周或者甚至更长时间来从相互键合的晶粒之间的间隙中浸提基本上全部的催化剂材料,这减慢了生产。
发明内容
在一些实施方案中,本发明包括形成多晶台的方法,其包括将包含超级磨料材料的多个粒子、包含硬质材料的基底和催化剂材料置于模具中。在该催化剂材料存在下部分烧结该多个粒子,以形成附着于基底端部的具有第一渗透性的半生多晶台。将该基底从该半生多晶台除去,和将催化剂材料从该半生多晶台除去。然后完全烧结该半生多晶台,以形成具有降低的、第二渗透性的多晶台。
在其他实施方案中,本发明包括形成多晶元件的方法,包括在催化剂材料和包含硬质材料的基底存在下部分烧结包含超级磨料材料的多个粒子,来形成附着于该基底端部的半生多晶台。除去该基底,和从该半生多晶台浸提出该催化剂材料。然后将该半生多晶台置于另一 基底。在另一不同的催化剂材料和其他基底存在下充分烧结该半生多晶台,来形成附着于其他基底端部的多晶台。
在另外的实施方案中,本发明包括在将多晶台附着于基底的过程中形成的包括基本上完全浸提的半生多晶台的中间结构。该基本上完全浸提的半生多晶台包含多个超级磨料材料的相互键合的晶粒。
附图说明
虽然说明书结束于具体指出和明确主张何为本发明的权利要求书,但是当结合附图来阅读时,可以从下面对本发明实施方案的说明中更容易地确定本发明实施方案的不同特征和优点,附图中:
图1是在将多晶台附着于基底的过程中,位于模具中的第一多个粒子和第二多个粒子的图示;
图2是在将多晶台附着于基底的过程中所形成的第一中间结构的图示;
图3是在将多晶台附着于基底的过程中所形成的另一中间结构的图示;
图4是在将多晶台附着于基底的过程中,位于模具中的基底上的半生多晶台的图示;
图5是附着于基底的完全烧结的多晶台的图示;
图6是通过图1到5所示的方法形成的切割元件的透视图;
图7是通过图1到5所示的方法形成的另一切割元件的透视图;
图8A是在将多晶台附着于基底的过程的另一实施方案中,位于附着于基底的完全烧结的多晶台上的半生多晶台的图示;
图8B是图8A的附着于基底的完全烧结的多晶台的俯视图;
图9是附着于基底的完全形成的多晶台的图示。
图10是通过图8和9所示的方法形成的切割元件的透视图;
图11是通过图8和9所示的方法所形成的另一切割元件的透视图;和
图12是具有附着于其上的切割元件的钻地钻头的透视图。
具体实施方式
这里所提出的图示并不表示任何具体的钻地工具、切割元件或轴承的实际视图,而仅仅是理想化的表示,其用于描述本发明的实施方案。此外,图之间共同的元件能够保持相同或类似的附图标记。
作为此处使用的,术语“钻地工具”和“钻地钻头”表示和包括在形成和扩大地层中的井筒的过程中用于钻探的任何类型的钻头或者工具,并且包括例如固定切削刃钻头、牙轮钻头、冲击钻头、取芯钻头、偏心钻头、双中心钻头、扩眼钻头、研磨机、刮刀钻头、混合式钻头和本领域已知的其他钻头和工具。
作为此处使用的,术语“超级磨料材料”表示和包括Knoop硬度值为约3000Kgf/mm2(29,420MPa)或更高的任何材料。超级磨料材料包括例如金刚石和立体氮化硼。超级磨料材料也可以描述为“超硬”材料。
作为此处使用的,术语“多晶台”表示和包括包含通过晶粒间键而直接结合在一起的材料的多个晶粒(即晶体)(例如超级磨料材料的晶粒)。所述材料单个晶粒的晶体结构可以在多晶材料内的空间中无规定向。
作为此处使用的,术语“晶粒间键”和“相互键合的”表示和包括在超级磨料材料相邻晶粒的原子之间的任何直接原子键(例如共价键,金属键等)。
作为此处使用的,术语“生坯”表示未烧结的。
作为此处使用的,术语“生坯部件”表示一种未烧结的结构,其包含多个离散粒子,其可以通过粘合剂材料而保持在一起,该未烧结的结构具有一定的尺寸和形状,使得通过随后的制造过程(包括但不限于机械加工和致密化),由该结构形成适用于钻地应用的部件和组件。
作为此处使用的,术语“半生”表示部分烧结的。
作为此处使用的,术语“半生部件”和“半生多晶台”表示包含多个粒子的部分烧结的结构,多个粒子中的至少一些部分地一起生长 来在相邻粒子间提供至少部分的键合,该结构具有一定的尺寸和形状,使得通过随后的制造过程(包括但不限于机械加工和进一步致密化)由该结构形成适用于钻地应用的部件。半生部件可以例如通过部分烧结生坯部件来形成。
作为此处使用的,术语“烧结”表示温度驱动的质量传输,其可以包括微粒组分的致密化和/或粗化,并且典型地包括除去起始粒子之间的至少一部分的孔(通过收缩完成),并结合相邻粒子之间的聚结和键合。
作为此处使用的,术语“材料组成”表示材料的化学组成和微观结构。换句话说,具有相同化学组成但是不同微观结构的材料被认为具有不同的材料组成。
作为此处使用的,术语“碳化钨”表示包含钨和碳的化合物(例如WC、W2C以及WC和W2C的组合)的任何材料组合物。碳化钨包括例如铸造碳化钨、烧结碳化钨和粗晶碳化钨。
参见图1,显示了在形成和同时将多晶台附着于基底102的过程中,位于模具104中的多个超级磨料材料粒子100和基底102的图示。该多个粒子100可以位于模具104中,并且可以包含超级磨料材料例如合成金刚石、天然金刚石、合成金刚石和天然金刚石的组合、立体氮化硼、氮化碳或者本领域已知的其他超级磨料材料。多个粒子100可以包含单峰尺寸分布或多峰(例如双峰、三峰等)尺寸分布。
基底102同样可以位于模具104中,并且可以包含预烧结部分。基底102可以包含适用于钻地应用的硬质材料。例如,硬质材料可以包括陶瓷-金属复合材料(即“金属陶瓷”材料),其包含分散在整个金属基质材料中的多个硬质陶瓷粒子。硬质陶瓷粒子可以包括碳化物、氮化物、氧化物和硼化物(包括碳化硼(B4C))。更具体地,硬质陶瓷粒子可以包括由元素如W、Ti、Mo、Nb、V、Hf、Ta、Cr、Zr、Al和Si制成的碳化物和硼化物。作为举例而非限制,可以用于形成硬质陶瓷粒子的材料包括碳化钨、碳化钛(TiC)、碳化钽(TaC)、二硼化钛(TiB2)、碳化铬、氮化钛(TiN)、氧化铝(Al2O3)、氮化铝(AlN)和碳化硅 (SiC)。陶瓷-金属复合材料的金属基质材料可以包括例如钴基、铁基、镍基、铁和镍基、钴和镍基、以及铁和钴基合金。该基质材料还可以选自市售的纯单质,例如钴、铁和镍。作为一个具体的非限定性的例子,该硬质材料可以包括在钴基质中的多个碳化钨粒子。
多个粒子100可以作为一个或多个层提供在模具104中的基底上。例如,该多个粒子100显示为分布在基底102端部的粒子层,并且基底102位于模具104中的第一多个粒子100的上面。在其他实施方案中,该第一多个粒子100可以位于模具104中的基底102。如果使用大于一层的粒子,则不同的层可以具有不同的平均粒度,或者混合的(双峰、三峰等)平均粒度。
催化剂材料106也可以提供在模具104中。催化剂材料106可以包括例如钴、铁、镍、钴基、铁基、镍基、铁和镍基、钴和镍基、以及铁和钴基合金或者现有技术已知的其他催化剂材料。催化剂材料106可以包括分布在例如多个粒子100中的催化剂粉末。替代地,元件例如圆片状、箔状或者网状的催化剂材料可以位于模具104中的多个粒子100和基底102之间。此外,例如在基底102包含金属陶瓷材料和该金属基质包含催化剂材料106的情况中,催化剂材料106可以位于(即作为成分混入)基底102中。包含可通过浸提方法除去的材料的另一多个粒子108也可以任选地提供在模具104中。例如,另一多个粒子108可以分布在模具104中的第一多个粒子100中。
模具104可以包括一种或多种通常杯形元件,例如杯形元件114a、杯形元件114b和杯形元件114c,其可以组装和压模和/或焊接在一起来形成模具104。第一多个粒子100、基底102、催化剂材料106和任选的其他多个粒子108可以位于内杯形元件114c中,如图1所示,该内杯形元件114c具有圆形端壁和从该圆形端壁垂直延伸的通常圆柱形的侧壁,由此该内杯形元件114c通常是圆柱体,并且包括第一封闭端和第二、对面的开放端。
然后,多个粒子100、基底102和任选的另一多个粒子108可以在催化剂材料106存在下进行烧结处理。例如,HTHP处理可以用于
部分烧结第一多个粒子100。HTHP处理中所用的峰温度可以超过1320℃,并且可以例如是约1400℃。HTHP处理中所用的峰压力可以是至少约5GPa。模具104中的多个粒子100、基底102、催化剂材料106和任选的另一多个粒子108可以在峰压力和温度保持足够的时间,来使得多个粒子100中晶粒生长和相互键合,同时多个粒子100保持尚未完全烧结。例如,模具104中的多个粒子100、基底102、催化剂材料和任选的另一多个粒子108可以在峰压力和温度保持小于约5分钟。
参见图2,显示了在将多晶台附着于基底的过程中形成的第一中间结构110。第一中间结构110可以包括半生多晶台112。半生多晶台112可以是部分烧结的。因此,至少一些超硬制成品材料的晶粒可以一起生长,和形成晶粒间键。在一些实施方案中,超硬材料晶粒的晶粒生长可以是最小化的。例如,超硬材料的晶粒可以表现出小于5μm的晶粒生长。第一中间结构110可以包括附着于完全烧结的基底102端部的半生多晶台112。在其他实施方案中,第一中间结构110可以包括附着于半生基底端部的半生多晶台112。
参见图3,显示了在将多晶台附着于基底的过程中形成的另一中间结构116。该另一中间结构116可以包括从基底102上脱离后的半生多晶台112(参见图2)。基底102可以例如通过放电加工(EDM)、激光加工、研磨、碳化物超声波加工或者本领域已知的用于除去包含硬质材料的基底102的其他方法来除去。在除去基底102后,半生多晶台112会表现出足够的结构强度而独立于任何外部支撑保持它的形状。
另一中间结构116还可以包括从其中浸提了材料之后的半生多晶台112。半生多晶台112可以完全浸提或者基本上完全浸提,通过浸提剂除去半生多晶台112的超级磨料材料之外的全部或者基本全部的材料。因此,催化剂材料106和可通过浸提剂除去的其他材料例如可以从半生多晶台112中浸提出来。浸提剂可以包括例如王水或者本领域已知的其他浸提剂。在浸提之前,半生多晶台112可以包含例如大 于10体积%的催化剂材料106和可通过浸提剂除去的其他材料。在一些实施方案中,半生多晶台112可以包含大于15体积%的催化剂材料106和可通过浸提剂除去的其他材料。催化剂材料106和可通过浸提剂除去的其他材料可以赋予半生多晶台112更大的渗透性,从而缩短浸提时间。
当与完全烧结的多晶台的浸提率相比时,半生多晶台112会表现出提高的浸提率。例如,在半生多晶台112的厚度t是约2mm的实施方案(图2)中,半生多晶台112会需要小于约两周来从中浸提出半生多晶台112的超级磨料材料之外的全部或者基本上全部的材料。因此,半生多晶台112的渗透性可以等于或大于完全烧结的多晶台的最终渗透性。
参见图4,半生多晶台112可以位于模具104’中,模具104’可以与前面图1所述的模具104相同,或者可以是另一模具。半生多晶台112可以位于第二完全烧结的基底102’端部。在其他实施方案中,基底102’可以包括生坯或者半生部件。其他基底102’可以包含硬质材料,例如在前面图1所示的第一基底102中所述的任何硬质材料。催化剂材料106’也可以位于模具中。例如,圆片状、箔状或者网状的催化剂材料106’可以插入到半生多晶台112和基底102’之间。此外,例如在基底102’包含金属陶瓷材料和金属基质包含催化剂材料106’的情况中,催化剂材料106’可以位于基底102’中。催化剂材料106’可以包含不同于图1和2所述方法中所用的第一催化剂材料106的第二催化剂材料,或者可以包含相同的催化剂材料。
半生多晶台112和基底102’可以在催化剂材料106’存在下进行烧结处理,来完全烧结半生多晶台112和将它附着于基底102’端部。该烧结处理可以是本领域已知的HTHP处理。在该烧结处理中,半生多晶台112的超级磨料材料晶粒的晶粒生长不会最小化。在该烧结处理中,催化剂材料106’可以从基底102’进入半生多晶台112中,填充相互键合的超硬材料晶粒之间的至少一些间隙。
参见图5,显示了通过烧结半生多晶台112(参见图4)所形成的完
全烧结的多晶台124。多晶台124位于并附着于完全烧结的基底102’的端部。因此,可以形成切割元件128,其包括附着于基底102’上的完全烧结的多晶台124。多晶台124可以具有小于半生多晶台112渗透性的最终渗透性。多晶台124可以包含位于超级磨料材料的相互键合的晶粒中的间隙,该间隙占多晶台124的小于10体积%。一些间隙可以包括从基底102’迁移到多晶台124中的催化剂材料106’。
多晶台124在附着于基底102’之后可以进行另一浸提处理。可以使用浸提剂例如王水或者本领域已知的其他浸提剂从多晶台124中除去催化剂材料106’。例如,多晶台124可以浸提到从多晶台124的切割表面130朝着基底102’延伸的选择的深度d。浸提深度d可以小于多晶台124的总厚度t。在一些实施方案中,该浸提深度d可以小于多晶台124总厚度t的一半。在其他实施方案中,浸提深度d可以大于多晶台124的总厚度t的一半。在仍然其他的实施方案中,浸提深度d可以等于或基本等于多晶台124的厚度t。在一些实施方案中,催化剂材料106’也可以除去到从多晶台124的径向外周的径向深度。在仍然另外的实施方案中,浸提深度d可以在多晶台124整个的径向上、角方向上或者两者上不同。在一些实施方案中,催化剂材料106’可以以一定的式样除去,或者仅从多晶台124中所选择的体积除去。
参见图6,显示了通过图1到5所示的方法形成的切割元件128。该切割元件128可以包括位于和附着于基底102’端部的多晶台124。多晶台124可以构成圆片和基底102’可以构成圆柱。参见图7,显示了通过图1到5所示的方法形成的另一切割元件128’。该切割元件128’可以包括位于和附着于基底102’的端部的多晶台124’。多晶台124’可以构成圆顶例如半球,和基底102’可以构成圆柱。在其他实施方案中,多晶台和基底可以具有其他形式,例如凿形、碑形或者现有技术已知的其他形状或形式。
参见图8A和8B,显示了半生多晶台112,其位于附着于基底134端部的完全烧结的多晶台132。半生多晶台112可以使用图1到3所示的方法来形成。附着于基底134端部的完全烧结的多晶台132可以 使用现有技术已知的常规方法形成为常规切割元件136。然后,完全烧结的多晶台132可以研磨到小于它的初始厚度的厚度t’。在其他实施方案中,切割元件136可以形成为具有降低的整体厚度t’’,以适应半生多晶台112的厚度t。半生多晶台112可以位于与基底134附着于模具104’’中相对的完全烧结的多晶台132的端部。在一些实施方案中,催化剂材料106可以位于完全烧结的多晶台132和半生多晶台112之间。例如,箔状或圆片状的催化剂材料106可以插入完全烧结的多晶台132和半生多晶台112之间。
完全烧结的多晶台132和基底134之间的界面139可以包括非平面界面设计。例如,该非平面界面设计可以包括多个交替的凸起和凹进、同心环、径向延伸的辐条或者本领域已知的其他非平面界面设计。在完全烧结的多晶台132被研磨到小于它的初始厚度的厚度t’的实施方案中,基底134的部分可以在与界面139相对的完全烧结的多晶台132的表面141处暴露,如图8B最佳所示。在其他实施方案中,非平面界面设计可以甚至不需研磨而在完全烧结的多晶台132的半生多晶台112所附着的表面141处暴露基底134的部分。因此,该非平面界面设计可以使得基底134中存在的催化剂材料106具有从基底134到半生多晶台112的更大的直接流道。
半生多晶台112、完全烧结的多晶台132和基底134可以进行烧结处理,来完全烧结该半生多晶台112和将该半生多晶台112附着于完全烧结的多晶台132。该烧结处理可以是现有技术已知的HTHP处理。在该烧结处理过程中,半生多晶台112的超级磨料材料晶粒的晶粒生长不会最小化。在该烧结处理过程中,催化剂材料可以从完全烧结的多晶台132、从基底134或者从两者进入半生多晶台112中,填充到超级磨料材料的相互键合的晶粒的间隙中。另外,半生多晶台112的超级磨料材料晶粒可以与完全烧结的多晶台132的超级磨料材料晶粒形成晶粒间键。
图9显示了附着于基底134的完全形成的多晶台124’’的图示。多晶台124’’可以包括一次的半生多晶台112和在烧结后完全烧结的多晶 台132。因为晶粒间键可以在上述烧结处理过程中,在半生多晶台112的超级磨料材料晶粒和完全烧结的多晶台132的超级磨料材料晶粒之间形成,所以其间的边界137在多晶台124’’中可能是不可分辨的。多晶台124’’位于和附着于完全形成的基底134。因此,可以形成包括附着于基底134的多晶台124’’的切割元件128’’。多晶台124’’可以具有小于半生多晶台112渗透性的最终渗透性。多晶台124’’可以包含位于超级磨料材料的相互键合的晶粒中的间隙,该间隙占多晶台124’’的小于10体积%。一些间隙可以包括从完全烧结的多晶台132和基底134迁移到多晶台124’’中的催化剂材料106。
多晶台124’’在附着于基底134之后可以进行另一浸提处理。可以使用浸提剂例如王水或者现有技术已知的其他浸提剂从多晶台124’’中除去催化剂材料。多晶台124’’可以浸提到从多晶台124’’的切割表面130’朝着基底134延伸的选择的深度d。浸提深度d可以小于多晶台124’’的总厚度t和t’。在一些实施方案中,浸提深度d可以小于多晶台124’’的总厚度t和t’的一半。在其他实施方案中,浸提深度d可以大于多晶台124’’的总厚度t和t’的一半。在其他实施方案中,浸提深度d可以至少基本上等于由一次半生多晶台112形成的多晶台124’’的部分,和因此至少基本上等于半生多晶台112的厚度t。在仍然其他的实施方案中,浸提深度d可以等于或者基本等于多晶台124’’的厚度t和t’。如上所述,还可以进行从多晶台124''侧面径向向内的浸提。
在一些实施方案中,可以选择完全烧结的多晶台132以具有低渗透性。例如,完全烧结的多晶台132可以包括如Lyons等人的名为“POLYCRYSTALLINE TABLES,POLYCRYSTALLINE ELEMENTS,AND RELATED METHODS”且具有代理人案卷号No.1684-10356US(CUT4-51771-US)的美国专利申请所述的微观结构。例如,完全烧结的多晶台132可以具有低的渗透性,其对于2mm的厚度t’表现为大于约五周来从完全烧结的多晶台132基本上完全除去催化剂材料的浸提速率。在完全烧结的多晶台132具有低渗透性的实施方案中,由完全烧结的多晶台132所形成的多晶台124’’的部分在浸 提多晶台124’’的过程中可以充当浸提剂的阻挡层。因此,可以通过由具有低渗透性的完全烧结的多晶台132所形成的多晶台124’’的一部分来阻挡浸提剂流过多晶台124’’。在完全烧结的多晶台132具有低渗透性的实施方案中,为了确保充分催化半生多晶台112(参见图8A和8B),催化剂材料106可以位于半生多晶台112和完全烧结的多晶台132之间。另外地或者替代地,非平面界面设计可以在完全烧结的多晶台132的半生多晶台所附着的表面141处暴露基底134的部分,来为催化剂材料106提供从基底134流向半生多晶台112的更大的直接流道。
参见图10,显示了通过图8和9所示的方法所形成的切割元件128’’。切割元件128’’可以包括位于和附着于基底134端部的多晶台124’’。多晶台124’’可以构成圆片和基底134可以构成圆柱。参见图11,显示了通过图8和9所示的方法所形成的另一切割元件128’’’。切割元件128’’’可以包括位于和附着于基底134端部的多晶台124’’’。多晶台124’’’可以构成圆顶例如半球,和基底134可以构成圆柱。在其他实施方案中,多晶台和基底可以具有其他形式,例如凿形、碑形或者现有技术已知的其他形状或形式。
参见图12,具有切割元件128(例如在前面图6、7、10和11中所述的切割元件128、128’、128’’、128’’’)的钻地钻头138的透视图,至少一个切割元件128具有附着其上的本发明的多晶台124。钻地钻头138包括钻头体140,其具有从钻头体140延伸的刀片142。切割元件128可以固定在刀片142中形成的凹处144中。但是,此处所述的切割元件128和多晶台124可以结合到和用于其他类型的钻地工具上,包括例如牙轮钻头、冲击钻头、取芯钻头、偏心钻头、双中心钻头、扩眼钻头、可膨胀扩眼钻头、研磨机、混合式钻头和本领域已知的其他钻头和工具。
虽然已经在此就某些实施方案来描述了本发明,但是本领域技术人员将认可和理解它不限于此。而是可以对此处所述的实施方案进行多种增加、删减和修改,而不脱离下面请求保护的本发明的范围,包 括其法律上的等价物。另外,来自一个实施方案的特征可以与另一实施方案的特征相结合,同时仍然包括在本发明人所意图的本发明的范围内。
Claims (17)
1.一种形成多晶台的方法,其包括:
将包含超级磨料材料的多个粒子、包含硬质材料的基底和催化剂材料置于模具中;
在该催化剂材料存在下部分烧结该多个粒子,以形成附着于该基底端部的具有第一渗透性的半生多晶台;
将该基底从该半生多晶台除去;
将催化剂材料从该半生多晶台除去;和
完全烧结该半生多晶台,以形成具有降低的、第二渗透性的多晶台。
2.权利要求1的方法,其进一步包括:
在部分烧结该多个粒子的过程中,使包含超级磨料材料的多个粒子的晶粒生长最小。
3.权利要求1的方法,其中完全烧结该半生多晶台以形成多晶台包括将该多晶台附着于另一基底的端部。
4.权利要求1的方法,其中从该半生多晶台除去催化剂材料包括从该半生多晶台除去基本上全部的催化剂材料。
5.权利要求1的方法,其进一步包括:
在部分烧结之前,将包含可通过浸提剂除去的非催化剂材料的另一多个粒子分配到该多个粒子中;和
与除去该催化剂材料基本上同时地从该半生多晶台除去可通过浸提剂除去的该非催化剂材料。
6.权利要求1的方法,其进一步包括:
在完全烧结该半生多晶台之前,将该半生多晶台置于附着于基底端部的完全烧结的多晶台上。
7.权利要求6的方法,其进一步包括:
在完全烧结的多晶台的该半生多晶台所附着的表面处暴露一部分的该基底。
8.权利要求6的方法,其进一步包括:
选择该完全烧结的多晶台以具有一定的渗透性,该渗透性对于2mm的厚度表现为:从该完全烧结的多晶台基本上完全除去催化剂材料的浸提时间大于5周。
9.权利要求1的方法,其中在该催化剂材料存在下部分烧结该多个粒子以形成附着于该基底端部的具有第一渗透性的半生多晶台包括部分烧结包含超级磨料材料的该多个粒子以形成半生多晶台,该半生多晶台具有大于10%体积的位于超级磨料材料的相互键合的晶粒之间的间隙内的另一材料。
10.权利要求9的方法,其中在该催化剂材料存在下部分烧结该多个粒子以形成附着于该基底端部的具有第一渗透性的半生多晶台包括部分烧结该多个粒子以形成半生多晶台,该半生多晶台具有大于15%体积的位于超级磨料材料的相互键合的晶粒之间的间隙内的另一材料。
11.权利要求1的方法,其中在该催化剂材料存在下部分烧结该多个粒子以形成附着于该基底端部的具有第一渗透性的半生多晶台包括部分烧结该多个粒子以形成半生多晶台,该半生多晶台对于2mm的厚度表现出:从该半生多晶台基本上完全除去催化剂材料的浸提时间小于2周。
12.权利要求1的方法,其中在该催化剂材料存在下部分烧结该多个粒子以形成附着于该基底端部的具有第一渗透性的半生多晶台包括在至少1400℃的温度用至少5GPa的压力压制包含超级磨料材料的该多个粒子、该基底和该催化剂材料小于5分钟。
13.一种形成多晶元件的方法,其包括:
在催化剂材料和包含硬质材料的基底存在下部分烧结包含超级磨料材料的多个粒子,以形成附着于该基底端部的半生多晶台;
除去该基底;
从该半生多晶台浸提该催化剂材料;
将该半生多晶台置于另一基底上;和
在另一不同的催化剂材料和另一基底存在下完全烧结该半生多晶台,以形成附着于该另一基底端部的多晶台。
14.权利要求13的方法,其进一步包括:
在部分烧结过程中,使包含超级磨料材料的该多个粒子的晶粒生长最小。
15.权利要求13的方法,其中从半生多晶台中浸提该催化剂材料包括从该半生多晶台中基本上完全浸提该催化剂材料。
16.权利要求13的方法,其中在催化剂材料和包含硬质材料的基底存在下部分烧结包含超级磨料材料的多个粒子以形成附着于该基底端部的半生多晶台包括形成半生多晶台,该半生多晶台具有大于10%体积的位于超级磨料材料的相互键合的晶粒之间的间隙内的另一材料。
17.权利要求13的方法,其中在催化剂材料和包含硬质材料的基底存在下部分烧结包含超级磨料材料的多个粒子以形成附着于该基底端部的半生多晶台包括形成半生多晶台,该半生多晶台对于2mm的厚度表现出:完全浸提该半生多晶台的浸提时间小于2周。
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US13/040,861 US8858662B2 (en) | 2011-03-04 | 2011-03-04 | Methods of forming polycrystalline tables and polycrystalline elements |
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US10174562B2 (en) | 2019-01-08 |
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US20160151889A1 (en) | 2016-06-02 |
US9440333B2 (en) | 2016-09-13 |
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US20120222363A1 (en) | 2012-09-06 |
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