CN103426716A - Field emission light source device - Google Patents
Field emission light source device Download PDFInfo
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- CN103426716A CN103426716A CN2012101534223A CN201210153422A CN103426716A CN 103426716 A CN103426716 A CN 103426716A CN 2012101534223 A CN2012101534223 A CN 2012101534223A CN 201210153422 A CN201210153422 A CN 201210153422A CN 103426716 A CN103426716 A CN 103426716A
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Abstract
The invention discloses a field emission light source device. The field emission light source device comprises an anode substrate, a cathode substrate and a supporting body connecting and supporting the anode substrate and the cathode substrate, wherein the anode substrate and the cathode substrate are arranged opposite to each other at intervals; a reflective layer, a luminous layer and a metal layer are sequentially arranged on the lower surface of the cathode substrate in a stacked mode, or the reflective layer, the metal layer and the luminous layer are sequentially arranged on the lower surface of the anode substrate in a stacked mode, and a plurality of microstructures which are connected with one another are evenly distributed on the metal layer; an electron emission layer is arranged on the upper surface of the cathode substrate. According to the field emission light source device, due to the fact that the metal layer with the microstructures is formed on the surface of the luminous layer, the surface plasma effect is generated on the interfaces of the metal layer and the luminous layer under the stimulation of cathode rays, internal quantum efficiency of luminescent materials of the luminous layer is greatly improved through the surface plasma effect, and the luminous efficiency of the luminous layer is improved. In addition, the reflective layer reflects light out, so that the light outgoing direction is opposite to the electron exit direction, and therefore the high requirements for the uniformity and the gray level of a light source from a backlight source are met.
Description
Technical field
The invention belongs to the photoelectron technology field, relate in particular to a kind of field emission light source device.
Background technology
At present, the feds that the vacuum microelectronics field occurs has demonstrated wide application prospect and has caused the extensive concern of domestic and international research institution in illumination and demonstration field.The operation principle of this feds is: under vacuum environment, the relative field emission cathode array of anode (field emissive arrays, FEAs) apply forward voltage and form accelerating field, the electronics of cathode emission accelerates Hong the luminescent material on pole plate and luminous on the sunny side.The operating temperature range of this kind of device wide (40 ℃ ~ 80 ℃), response time short (<1ms), simple in structure, power saving, meet environment protection requirement.Because field emission light source belongs to area source, the uniformity is high, and gray scale is large, is well suited for being applied to the backlight of LCD display.Along with the size of display is increasing, the gray scale of the backlight needed is also increasing, and uniformity is also more and more higher, and how industry all improves gray scale and the uniformity of field emission light source in research.The field emission light source structure that a kind of reverse bright dipping is arranged in prior art, its light direction is contrary with the electronics exit direction, due to light outgoing after vacuum layer, make bright dipping even, show for LCD, saved emulsion and even tabula rasa, thereby provided cost savings, reduce operation, and improved gray scale.But the same with common field emission light source structure, all there is low this essential problem of luminous efficiency in they and has greatly limited the application of field emission light source device.
Summary of the invention
The object of the invention is to overcome above-mentioned the deficiencies in the prior art, provide that a kind of luminous efficiency is high, good uniformity, field emission light source device that gray scale is high.
The present invention is achieved in that a kind of field emission light source device, comprises that anode substrate, cathode base and connection support the supporter of described anode substrate and cathode base, and described anode substrate is relative with cathode base and spaced; The lower surface of described anode substrate be cascading reflector layer, luminescent layer and metal level, perhaps be cascading reflector layer, metal level and luminescent layer of the lower surface of described anode substrate, described metal level is provided with some being connected to each other and equally distributed micro-structural; The upper surface of described cathode base is provided with electron emission layer.
Particularly, described anode substrate and cathode base are the ITO transparent conducting glass substrate.
Particularly, described reflector layer is made by aluminium, silver, platinum or palladium.
Particularly, described luminescent layer is phosphor powder layer, fluorescent glass, luminescent ceramic, luminescence transparent pottery, luminescent glass ceramic or light-emitting film.
Particularly, any in gold, silver, copper, platinum, palladium of described metal level made.
Particularly, described metal level is formed at the surface of described luminescent layer by sputter or evaporation process.
Particularly, the thickness of described metal level is 0.5nm ~ 20nm.
Particularly, described micro-structural is formed on described metal level by etch process.
Particularly, between described two adjacent micro-structurals apart from 50nm ~ 10000nm.
Particularly, to be that the radius circle that is 5 ~ 100nm or the length of side triangle that is 5 ~ 100nm or the length of side are 5 ~ 100nm square for the cross section of described micro-structural.
The present invention is by forming the metal level with micro-structural on the luminescent layer surface, produce the surface plasma bulk effect on the interface of metal level and luminescent layer under cathode-ray exciting, by this effect, the internal quantum efficiency of the luminescent material of luminescent layer is improved greatly, thereby improved the luminous efficiency of luminescent layer.
Simultaneously, owing to being connected to one another between each micro-structural on metal level, therefore metal level has good conducting property, thereby the luminous electronics of the luminescent material that makes the stimulated luminescence layer is shifted rapidly, avoided forming charge accumulated on metal level and made the surface band negative electricity of luminescent layer and form negative potential and then affect luminous efficiency, having guaranteed the luminous efficiency of luminescent layer and luminous sustainedly and stably.
In addition, reflector layer of the present invention by light reflection out, makes light direction contrary with the electronics exit direction, and therefore, the exiting surface uniformity of field emission light source device of the present invention is high, thereby meets backlight to the uniformity of light source, the high request of gray scale.
The accompanying drawing explanation
In order to be illustrated more clearly in technical scheme of the present invention, below will the accompanying drawing of required use in embodiment be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schematic diagram of the field emission light source device that provides of the embodiment of the present invention one;
Fig. 2 is the schematic diagram of the field emission light source device that provides of the embodiment of the present invention two.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.
Embodiment mono-
As shown in Figure 1, a kind of field emission light source device that the embodiment of the present invention one provides, comprise anode substrate 11, cathode base 12 and be connected supporting anodes substrate 11 and the supporter 13 of cathode base 12, and anode substrate 11 is relative with cathode base 12 and spaced; The lower surface of anode substrate 11 be cascading reflector layer 14, luminescent layer 15 and metal level 16, metal level 16 is provided with some being connected to each other and equally distributed micro-structural 161; The upper surface of cathode base 12 is provided with electron emission layer 17.
When the field emission light source device that the present embodiment provides is worked, add high voltage between anode substrate 11 and cathode base 12, form high voltage electric field between anode substrate 11 and cathode base 12, under the effect of high voltage electric field, electronics is overflowed and accelerated motion from electron emission layer 17, luminescent material on a part penetration of electrons metal level 16 and then stimulated luminescence layer 15 and realize luminous, another part electronics bombards metal level 16, produce surface plasma in metal level 16 and the interface of luminescent layer 15, luminescent material on surface plasma and luminescent layer 15 coupling and luminous, thereby realize that fluorescence strengthens, the light that luminescent layer 15 sends is through backward cathode base 12 outgoing of reflection of reflector layer 14, and through cathode base 12, thereby realize illumination.
The present invention is by forming the metal level 16 with micro-structural 161 on luminescent layer 15 surfaces, produce the surface plasma bulk effect on the interface of metal level 16 and luminescent layer 15 under cathode-ray exciting, by this effect, the internal quantum efficiency of the luminescent material of luminescent layer 15 is improved greatly, thereby improved the luminous efficiency of luminescent layer 15.
Simultaneously, owing to being connected to one another between each micro-structural 161 on metal level 16, therefore metal level 16 has good conducting property, thereby the luminous electronics of the luminescent material that makes stimulated luminescence layer 15 is shifted rapidly, avoided on metal level 16 forming charge accumulated and making the surface band negative electricity of luminescent layer 15 and form negative potential and then affect luminous efficiency, guaranteed the luminous efficiency of luminescent layer 15 and luminous sustainedly and stably.
In addition, reflector layer 14 of the present invention by light reflection out, makes light direction contrary with the electronics exit direction, and therefore, the exiting surface uniformity of field emission light source device of the present invention is high, thereby meets backlight to the uniformity of light source, the high request of gray scale.
In the present embodiment, anode substrate 11 and cathode base 12 are the ITO transparent conducting glass substrate.
In the present embodiment, reflector layer 14 is made by aluminium, silver, platinum or palladium, adopts the reflector layer 14 that these materials are made to have high conductivity, high reflectance advantage.
In the present embodiment, luminescent layer 15 is phosphor powder layer, fluorescent glass, luminescent ceramic, luminescence transparent pottery, luminescent glass ceramic or light-emitting film.
In the present embodiment, any in gold, silver, copper, platinum, palladium of metal level 16 made, and metal level 16 is formed at the surface of luminescent layer 15 by magnetron sputtering or evaporation process, and the thickness of metal level 16 is 0.5nm ~ 20nm, preferably, the thickness of metal level 16 is limited between 1nm ~ 10nm.
In the present embodiment; micro-structural 161 is formed on metal level 16 by etch process (as photoetching process); after etching completes; between two adjacent micro-structurals 161 apart from 50nm ~ 10000nm; and be connected to each other between each micro-structural 161; thereby make between micro-structural 161, can conduct electricity; particularly; it is square that the cross section of each micro-structural 161 is that the radius circle that is 5 ~ 100nm or the length of side triangle that is 5 ~ 100nm or the length of side are 5 ~ 100nm; certainly; the cross section of micro-structural 161 can be also other shapes, all belongs to protection scope of the present invention.
Embodiment bis-
As shown in Figure 2, a kind of field emission light source device that the embodiment of the present invention two provides, comprise anode substrate 21, cathode base 22 and be connected supporting anodes substrate 21 and the supporter 23 of cathode base 22, and anode substrate 21 is relative with cathode base 22 and spaced; The lower surface of anode substrate 21 be cascading reflector layer 24, metal level 25 and luminescent layer 26, metal level 25 is provided with some being connected to each other and equally distributed micro-structural 251; The upper surface of cathode base 22 is provided with electron emission layer 27.
When the field emission light source device that the present embodiment provides is worked, add high voltage between anode substrate 21 and cathode base 22, form high voltage electric field between anode substrate 21 and cathode base 22, under the effect of high voltage electric field, electronics is overflowed and accelerated motion from electron emission layer 27, at first electronics bombards the energy level transition that luminescent material on luminescent layer 26 causes active ions, wherein the ion of a part in excitation state produces surface plasma in luminescent layer 26 and the interface of metal level 25, luminescent material on surface plasma and luminescent layer 26 coupling and luminous, thereby realize that fluorescence strengthens, the light that luminescent layer 26 sends is through backward cathode base 22 outgoing of reflection of reflector layer 24, and through cathode base 22, thereby realize illumination.
The present invention is by forming the metal level 25 with micro-structural 251 on luminescent layer 26 surfaces, produce the surface plasma bulk effect on the interface of metal level 25 and luminescent layer 26 under cathode-ray exciting, by this effect, the internal quantum efficiency of the luminescent material of luminescent layer 26 is improved greatly, thereby improved the luminous efficiency of luminescent layer 26.
Simultaneously, owing to being connected to one another between each micro-structural 251 on metal level 25, therefore metal level 25 has good conducting property, thereby the luminous electronics of the luminescent material that makes stimulated luminescence layer 26 is shifted rapidly, avoided on metal level 25 forming charge accumulated and making the surface band negative electricity of luminescent layer 26 and form negative potential and then affect luminous efficiency, guaranteed the luminous efficiency of luminescent layer 26 and luminous sustainedly and stably.
In addition, reflector layer 24 of the present invention by light reflection out, makes light direction contrary with the electronics exit direction, and therefore, the exiting surface uniformity of field emission light source device of the present invention is high, thereby meets backlight to the uniformity of light source, the high request of gray scale.
In the present embodiment, anode substrate 21 and cathode base 22 are the ITO transparent conducting glass substrate.
In the present embodiment, reflector layer 14 is made by aluminium, silver, platinum or palladium, adopts the reflector layer 14 that these materials are made to have high conductivity, high reflectance advantage.
In the present embodiment, luminescent layer 26 is phosphor powder layer, fluorescent glass, luminescent ceramic, luminescence transparent pottery, luminescent glass ceramic or light-emitting film.
In the present embodiment, any in gold, silver, copper, platinum, palladium of metal level 25 made, and metal level 25 is formed at the surface of luminescent layer 26 by magnetron sputtering or evaporation process, and the thickness of metal level 25 is 0.5nm ~ 20nm, preferably, the thickness of metal level 25 is limited between 1nm ~ 10nm.
In the present embodiment; micro-structural 251 is formed on metal level 25 by etch process (as photoetching process); after etching completes; between two adjacent micro-structurals 251 apart from 50nm ~ 10000nm; and be connected to each other between each micro-structural 251; thereby make between micro-structural 251, can conduct electricity; particularly; it is square that the cross section of each micro-structural 251 is that the radius circle that is 5 ~ 100nm or the length of side triangle that is 5 ~ 100nm or the length of side are 5 ~ 100nm; certainly; the cross section of micro-structural 251 can be also other shapes, all belongs to protection scope of the present invention.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.
Claims (10)
1. a field emission light source device, is characterized in that, comprises that anode substrate, cathode base and connection support the supporter of described anode substrate and cathode base, and described anode substrate is relative with cathode base and spaced; The lower surface of described anode substrate be cascading reflector layer, luminescent layer and metal level, perhaps be cascading reflector layer, metal level and luminescent layer of the lower surface of described anode substrate, described metal level is provided with some being connected to each other and equally distributed micro-structural; The upper surface of described cathode base is provided with electron emission layer.
2. field emission light source device according to claim 1, is characterized in that, described anode substrate and cathode base are the ITO transparent conducting glass substrate.
3. field emission light source device according to claim 1, is characterized in that, described reflector layer is made by aluminium, silver, platinum or palladium.
4. field emission light source device according to claim 1, is characterized in that, described luminescent layer is phosphor powder layer, fluorescent glass, luminescent ceramic, luminescence transparent pottery, luminescent glass ceramic or light-emitting film.
5. field emission light source device according to claim 1, is characterized in that, any in gold, silver, copper, platinum, palladium of described metal level made.
6. field emission light source device according to claim 1, is characterized in that, described metal level is formed at the surface of described luminescent layer by sputter or evaporation process.
7. field emission light source device according to claim 1, is characterized in that, the thickness of described metal level is 0.5nm ~ 20nm.
8. field emission light source device according to claim 1, is characterized in that, described micro-structural is formed on described metal level by etch process.
9. field emission light source device according to claim 1, is characterized in that, between described two adjacent micro-structurals apart from 50nm ~ 10000nm.
10. field emission light source device according to claim 1, is characterized in that, it is square that the cross section of described micro-structural is that the radius circle that is 5 ~ 100nm or the length of side triangle that is 5 ~ 100nm or the length of side are 5 ~ 100nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101534223A CN103426716A (en) | 2012-05-17 | 2012-05-17 | Field emission light source device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101534223A CN103426716A (en) | 2012-05-17 | 2012-05-17 | Field emission light source device |
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| CN103426716A true CN103426716A (en) | 2013-12-04 |
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Citations (7)
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| JP2000260345A (en) * | 1999-03-05 | 2000-09-22 | Futaba Corp | Field emission type light emitting element and black matrix material therefor |
| US20060138935A1 (en) * | 2004-12-25 | 2006-06-29 | Hon Hai Precision Industry Co., Ltd. | Field emission lamp and backlight module using same |
| US20060232187A1 (en) * | 2005-04-19 | 2006-10-19 | Industrial Technology Research Institute | Field emission light source and method for operating the same |
| WO2010148553A1 (en) * | 2009-06-23 | 2010-12-29 | 海洋王照明科技股份有限公司 | Method for raising luminous efficiency of field emissive luminescent material, luminescent glass element and the preparing method thereof |
| US20110279013A1 (en) * | 2008-06-06 | 2011-11-17 | Xerox Corporation | Method of forming field emission light emitting device including the formation of an emitter within a nanochannel in a dielectric matrix |
| CN102333393A (en) * | 2010-07-13 | 2012-01-25 | 海洋王照明科技股份有限公司 | Field emission illumination light source |
| CN102403188A (en) * | 2010-09-08 | 2012-04-04 | 海洋王照明科技股份有限公司 | Field emission plane light source and preparation method thereof |
-
2012
- 2012-05-17 CN CN2012101534223A patent/CN103426716A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000260345A (en) * | 1999-03-05 | 2000-09-22 | Futaba Corp | Field emission type light emitting element and black matrix material therefor |
| US20060138935A1 (en) * | 2004-12-25 | 2006-06-29 | Hon Hai Precision Industry Co., Ltd. | Field emission lamp and backlight module using same |
| US20060232187A1 (en) * | 2005-04-19 | 2006-10-19 | Industrial Technology Research Institute | Field emission light source and method for operating the same |
| US20110279013A1 (en) * | 2008-06-06 | 2011-11-17 | Xerox Corporation | Method of forming field emission light emitting device including the formation of an emitter within a nanochannel in a dielectric matrix |
| WO2010148553A1 (en) * | 2009-06-23 | 2010-12-29 | 海洋王照明科技股份有限公司 | Method for raising luminous efficiency of field emissive luminescent material, luminescent glass element and the preparing method thereof |
| CN102333393A (en) * | 2010-07-13 | 2012-01-25 | 海洋王照明科技股份有限公司 | Field emission illumination light source |
| CN102403188A (en) * | 2010-09-08 | 2012-04-04 | 海洋王照明科技股份有限公司 | Field emission plane light source and preparation method thereof |
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Application publication date: 20131204 |