CN103424770A - Monolithic integration sensitive array for acoustic positioning of inner detector of pipeline - Google Patents

Monolithic integration sensitive array for acoustic positioning of inner detector of pipeline Download PDF

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CN103424770A
CN103424770A CN2013103627655A CN201310362765A CN103424770A CN 103424770 A CN103424770 A CN 103424770A CN 2013103627655 A CN2013103627655 A CN 2013103627655A CN 201310362765 A CN201310362765 A CN 201310362765A CN 103424770 A CN103424770 A CN 103424770A
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pipeline
beam arm
wheatstone bridge
arm silicon
pipeline detector
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CN103424770B (en
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张国军
宋小鹏
简泽明
刘宏
刘梦然
张文栋
薛晨阳
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North University of China
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Abstract

The invention relates to a positioning technology of an inner detector of a pipeline, specifically relates to a monolithic integration sensitive array for acoustic positioning of the inner detector of the pipeline, and solves the problems of low positioning accuracy of existing positioning technologies of the inner detector and the pipeline. The monolithic integration sensitive array for acoustic positioning of the inner detector of the pipeline comprises two four-beam-arm silicon micro-structures, two miniature cylindrical objects, two center connection members, and a detection circuit, wherein the two four-beam-arm silicon micro-structures and the two center connection members are all located on the same plane, and upper ends of the two miniature cylindrical objects are vertically fixed at the center of the lower surfaces of the two center connection members. The monolithic integration sensitive array is applicable to acoustic positioning of the inner detector of the oil-gas pipeline as well as leak detection positioning of various kinds of pipelines.

Description

The integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging
Technical field
The present invention relates to the location technology of in-pipeline detector, specifically the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging.
Background technology
Inner Examination Technology on Pipeline refers to that the in-pipeline detector by non-destructive detecting device and data sampling and processing and storage system are housed moves in pipeline, completes the scanning step by step to pipeline, reaches the purpose to size of pipeline defect, position probing.Inner Examination Technology on Pipeline can guarantee in the situation that the normal operation of pipeline quantitatively detects the defect of pipeline that uses the factors such as the rear external force damage produced, corrosion to cause because pipeline is long-term.In actual applications, when in-pipeline detector moves in pipeline, during through climbing place, threeway place and corner smaller part etc., stuck phenomenon easily occurs.In like manner, the long-term foreign material of rear its inside deposition that use of pipeline also can cause in-pipeline detector that stuck phenomenon occurs.Once in-pipeline detector is long-time stuck in pipeline, just can cause pipeline transportation work normally to carry out, and causes thus huge economic loss and environmental pollution.Therefore, for fear of above-mentioned economic loss and environmental pollution, need by stuck, at ducted in-pipeline detector, to take out in time.In the taking-up process, for fear of blindly excavating, reducing digging time and workload, need at ducted in-pipeline detector, accurately locate stuck.Under the prior art condition, the location technology of in-pipeline detector mainly is divided into location technology and the location technology based on acoustic sensor array based on detecting the pulse electromagnetic signal.Wherein, location technology based on detecting the pulse electromagnetic signal refers to installs signal transmitter on in-pipeline detector, the continuous transponder pulse electromagnetic signal of this signal transmitter, detect this pulse electromagnetic signal, the location of realizing thus in-pipeline detector by the receiving antenna that is arranged on monitoring point.The shortcoming of this kind of technology is: when the stuck position of in-pipeline detector exceeds the sensing range of receiving antenna, it is very poor that location accuracy can become.Location technology based on acoustic sensor array refers to mounting characteristic signal generation apparatus on in-pipeline detector, when in-pipeline detector stuck in pipeline the time, the characteristic signal generating means sends characteristic signal, detect this characteristic signal by acoustic sensor array, realize thus the location of in-pipeline detector.The shortcoming of this kind of technology is: because acoustic sensor array is difficult to keep its consistance, cause location accuracy low.Based on this, be necessary to invent a kind of location technology of brand-new in-pipeline detector, to solve the low problem of location technology location accuracy of existing in-pipeline detector.
Summary of the invention
The present invention, in order to solve the low problem of location technology location accuracy of existing in-pipeline detector, provides a kind of monolithic for the in-pipeline detector acoustic fix ranging integrated sensitization array.
The present invention adopts following technical scheme to realize: the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging comprises two four beam arm silicon microstructures, two miniature column ,Liang Ge center connectors and testing circuit; Two four beam arm silicon microstructure He Liangge center connectors all are positioned at same plane; The upper end of two miniature columns vertically is fixed in the lower surface central authorities of Liang Ge center connector separately; Testing circuit comprises the first Wheatstone bridge connected and composed by first-Di, tetra-strain voltage dependent resistor (VDR)s, the second Wheatstone bridge connected and composed by five-Di, eight strain voltage dependent resistor (VDR)s, the 3rd Wheatstone bridge connected and composed by nine-Di, 12 strain voltage dependent resistor (VDR)s, the 4th Wheatstone bridge connected and composed by 13-Di, 16 strain voltage dependent resistor (VDR)s; The first Wheatstone bridge is layed on wherein two beam arms of one of them four beam arm silicon microstructure; The second Wheatstone bridge is layed on two other beam arm of one of them four beam arm silicon microstructure; The 3rd Wheatstone bridge is layed on wherein two beam arms of another one four beam arm silicon microstructures; The 4th Wheatstone bridge is layed on two other beam arm of another one four beam arm silicon microstructures.
During work, take ground to set up the rectangular coordinate system of two four beam arm silicon microstructures as the x-y plane, and guarantee that the x axle of rectangular coordinate system is parallel to pipeline.The specific works process is as follows: when in-pipeline detector stuck in pipeline the time, the audio unit that in-pipeline detector carries sends vibration signal, this vibration signal acts on two miniature columns, make two miniature column generation deflections, two miniature columns and then drive two four beam arm silicon microstructures and produce STRESS VARIATION, make the resistance of first-Di, 16 strain voltage dependent resistor (VDR)s change, first-Di, tetra-Wheatstone bridges are output voltage signal thus, can calculate the azimuth angle theta of in-pipeline detector by this voltage signal.Concrete computation process is as follows: the voltage signal of supposing first-Di, tetra-Wheatstone bridge outputs is respectively Ux1, Uy1, Ux2, Uy2, the azimuth angle theta 1=arctan(Uy1/Ux1 that one of them four beam arm silicon microstructure records), and 1≤90 ° of 0 °<θ, and 2≤90 ° of 0 °<θ the azimuth angle theta 2=arctan(Uy2/Ux2 that another four beam arms silicon microstructure records).Due to the distance at the center of in-pipeline detector to two four a beam arm silicon microstructure, much larger than the distance between the center of two four beam arm silicon microstructures, the center of two four beam arm silicon microstructures can be regarded as and is positioned at same initial point.Therefore, as shown in Figure 4, the rectangular coordinate system of two four beam arm silicon microstructures just can be divided into four zones: as 1<45 ° of 0 °<θ, during 2<45 ° of 0 °<θ, the azimuth angle theta of in-pipeline detector is in the I zone, and θ=θ 1; As 1<45 ° of 0 °<θ, during 2<90 ° of 45 °<θ, the azimuth angle theta of in-pipeline detector is in the IV zone, and θ=180 °-θ 1; As 1<90 ° of 45 °<θ, during 2<45 ° of 0 °<θ, the azimuth angle theta of in-pipeline detector is in the II zone, and θ=θ 1; As 1<90 ° of 45 °<θ, during 2<90 ° of 45 °<θ, the azimuth angle theta of in-pipeline detector is in the III zone, and θ=180 °-θ 1.The position angle of in-pipeline detector is as shown in table 1:
The position angle of table 1 in-pipeline detector
Figure 2013103627655100002DEST_PATH_IMAGE001
In actual applications, pipeline bury the trend be known, therefore only need calculate the azimuth angle theta of in-pipeline detector, just can determine the position of in-pipeline detector fully, realize thus the accurate location of in-pipeline detector, thereby conveniently take out at ducted in-pipeline detector stuck in time.Based on said process, with the location technology of existing in-pipeline detector, compare, the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging of the present invention has following advantage: one, with the location technology based on detecting the pulse electromagnetic signal, compare, the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging of the present invention no longer positions based on detecting the pulse electromagnetic signal, and be based on the detection vibration signal, position, thereby its sensing range is not limited, location accuracy is higher.Its two, with the location technology based on acoustic sensor array, compare, the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging of the present invention adopts two four beam arm silicon microstructures, thereby it can continue to keep consistency, location accuracy is higher.In sum, the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging of the present invention, by adopting brand new, efficiently solves the low problem of location technology location accuracy of existing in-pipeline detector.
Further, one of them four beam arm silicon microstructure is cross four beam arm silicon microstructures, and another four beam arms silicon microstructure is X font four beam arm silicon microstructures.During work, the azimuth angle theta 1 recorded by one of them four beam arm silicon microstructure differs certain angle with the azimuth angle theta 2 recorded by another four beam arms silicon microstructure, contributes to eliminate port and starboard ambiguity, thereby further improves location accuracy.
Further, the consistent size of two four beam arm silicon microstructures; The consistent size of two miniature columns; The consistent size of Liang Ge center connector; The resistance of first-Di, 16 strain voltage dependent resistor (VDR)s is all consistent.During work, consistent size is consistent with resistance contributes to further to improve consistance, thereby further improves location accuracy.
The present invention efficiently solves the low problem of location technology location accuracy of existing in-pipeline detector, it has the characteristics such as volume is little, vector property, stability is good, highly sensitive, cost is low, be applicable to the acoustic fix ranging of the internal detector of oil and gas pipes, also be applicable to the Leak Detection location of various pipes.
The accompanying drawing explanation
Fig. 1 is perspective view of the present invention.
Fig. 2 is planar structure schematic diagram of the present invention.
Fig. 3 is the structural representation of first-Di, tetra-Wheatstone bridges of the present invention.
Fig. 4 is azimuthal calculating schematic diagram of in-pipeline detector of the present invention.
In figure: 1-tetra-beam arm silicon microstructures, the miniature column of 2-, 3-center connector, 4-pipeline, 5-in-pipeline detector.
Embodiment
The integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging, comprise two four beam arm silicon microstructures 1, two miniature column 2 ,Liang Ge center connector 3 and testing circuits;
Two four beam arm silicon microstructure 1 He Liangge center connectors 3 all are positioned at same plane;
The upper end of two miniature columns 2 vertically is fixed in the lower surface central authorities of Liang Ge center connector 3 separately;
Testing circuit comprises the first Wheatstone bridge connected and composed by first-Di, tetra-strain voltage dependent resistor (VDR) R1-R4, the second Wheatstone bridge connected and composed by five-Di, eight strain voltage dependent resistor (VDR) R5-R8, the 3rd Wheatstone bridge connected and composed by nine-Di, 12 strain voltage dependent resistor (VDR) R9-R12, the 4th Wheatstone bridge connected and composed by 13-Di, 16 strain voltage dependent resistor (VDR) R13-R16;
The first Wheatstone bridge is layed on wherein two beam arms of one of them four beam arm silicon microstructure 1; The second Wheatstone bridge is layed on two other beam arm of one of them four beam arm silicon microstructure 1; The 3rd Wheatstone bridge is layed on wherein two beam arms of another one four beam arm silicon microstructures 1; The 4th Wheatstone bridge is layed on two other beam arm of another one four beam arm silicon microstructures 1.
One of them four beam arm silicon microstructure 1 is cross four beam arm silicon microstructures, and another four beam arms silicon microstructure 1 is X font four beam arm silicon microstructures.
The consistent size of two four beam arm silicon microstructures 1; The consistent size of two miniature columns 2; The consistent size of Liang Ge center connector 3; The resistance of first-Di, 16 strain voltage dependent resistor (VDR) R1-R16 is all consistent.
During concrete enforcement, two four beam arm silicon microstructure 1 He Liangge center connectors 3 all adopt single SOI wafer to form through the MEMS processes; First-Di, tetra-Wheatstone bridges all adopt diffusion technique to be laid.

Claims (3)

1. the integrated sensitization array of the monolithic for the in-pipeline detector acoustic fix ranging, is characterized in that: comprise two four beam arm silicon microstructures (1), two miniature columns (2) ,Liang Ge center connectors (3) and testing circuits;
Two four beam arm silicon microstructure (1) He Liangge center connectors (3) all are positioned at same plane;
The upper end of two miniature columns (2) vertically is fixed in the lower surface central authorities of Liang Ge center connector (3) separately;
Testing circuit comprises the first Wheatstone bridge connected and composed by first-Di, tetra-strain voltage dependent resistor (VDR)s (R1-R4), the second Wheatstone bridge connected and composed by five-Di, eight strain voltage dependent resistor (VDR)s (R5-R8), the 3rd Wheatstone bridge connected and composed by nine-Di, 12 strain voltage dependent resistor (VDR)s (R9-R12), the 4th Wheatstone bridge connected and composed by 13-Di, 16 strain voltage dependent resistor (VDR)s (R13-R16);
The first Wheatstone bridge is layed on wherein two beam arms of one of them four beam arm silicon microstructure (1); The second Wheatstone bridge is layed on two other beam arm of one of them four beam arm silicon microstructure (1); The 3rd Wheatstone bridge is layed on wherein two beam arms of another one four beam arm silicon microstructures (1); The 4th Wheatstone bridge is layed on two other beam arm of another one four beam arm silicon microstructures (1).
2. the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging according to claim 1, it is characterized in that: one of them four beam arm silicon microstructure (1) is cross four beam arm silicon microstructures, and another four beam arms silicon microstructure (1) is X font four beam arm silicon microstructures.
3. the integrated sensitization array of a kind of monolithic for the in-pipeline detector acoustic fix ranging according to claim 1, is characterized in that: the consistent size of two four beam arm silicon microstructures (1); The consistent size of two miniature columns (2); The consistent size of Liang Ge center connector (3); The resistance of first-Di, 16 strain voltage dependent resistor (VDR)s (R1-R16) is all consistent.
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