CN103422075B - Form the method for rete - Google Patents
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- CN103422075B CN103422075B CN201210149010.2A CN201210149010A CN103422075B CN 103422075 B CN103422075 B CN 103422075B CN 201210149010 A CN201210149010 A CN 201210149010A CN 103422075 B CN103422075 B CN 103422075B
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Abstract
Form a method for rete, comprising: substrate is provided; Side arranges the first pipe on the substrate, and described first pipe has first mouth of pipe and second mouth of pipe, and described first mouth of pipe is relative with described substrate; In described first pipe, pass into the gas for the formation of rete by described second mouth of pipe, make the described gas for the formation of rete arrive described substrate in bundle, so that the position arrived at the gas in bundle to form rete.The technical program can be implemented in low temperature environment the method realizing being formed high temperature film.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the method forming rete.
Background technology
In semiconductor technology, usual use chemical vapour deposition (CVD, chemical vapor deposition), strengthen PCVD (PECVD, plasma enhanced chemical vapordeposition) or plasma activated chemical vapour deposition (PCVD, plasma chemical vapordeposition) etc. method formed medium layer, in CVD, PECVD and PCVD technique, reactant gases on the wafer surface or plasma body are high-temperature gas or high-temperature plasma, and typical temperature can reach more than 500 degrees Celsius.Fig. 1 strengthens the method schematic diagram that plasma activated chemical vapour deposition forms rete in prior art, with reference to figure 1, the method forming rete comprises: provide substrate 10, be formed with other device architecture (not shown) on the substrate 10; Enhancing plasma body 11 is passed in the chamber (chamber) at substrate 10 place, then strengthens after plasma body 11 reacts to each other and can form one deck rete 12 on substrate 10 surface.
In semiconducter device, some material can lose efficacy in high temperature environments or occur defect.Such as, utilizing magneticsubstance to do in the formation process of the storer of storage media, if utilize CVD, PECVD or PCVD to form medium layer, hot environment can reduce the memory property of magneticsubstance, causes the performance of the storer formed reduce or disappear.In semiconductor rear section technique, when utilizing CVD, PECVD or PCVD to form interlayer dielectric layer, contact plug such as copper contact plug there will be copper dissociation in hot environment, causes copper to contact in plug and occurs cavity, thus affect reliability.
When forming medium layer to solve, some material can lose efficacy or occur the problem of defect in high temperature environments, is necessary to propose a kind of method forming rete.
In prior art, have many methods about forming rete, such as publication number disclosed in 15 days March in 2012 is the american documentation literature of US2012/0064717A1, but, all do not solve above technical problem.
Summary of the invention
The problem that the present invention solves is that when forming medium layer, some material can lose efficacy or occur the problem of defect in high temperature environments.
For solving the problem, the invention provides a kind of method forming rete, comprising:
Substrate is provided;
Side arranges the first pipe on the substrate, and described first pipe has first mouth of pipe and second mouth of pipe, and described first mouth of pipe is relative with described substrate;
In described first pipe, pass into the gas for the formation of rete by described second mouth of pipe, make the described gas for the formation of rete arrive described substrate in bundle, so that the position arrived at the gas in bundle to form rete.
Optionally, also comprise:
At outer sheathed second pipe of described first pipe, between described second pipe and the first pipe, there is gap;
When passing into gas in described first pipe, in described gap, pass into cooling gas, the temperature of described cooling gas is less than the temperature of the gas for the formation of rete, to reach the object reducing base reservoir temperature; And described first pipe is the poor conductor of heat to described cooling gas, prevent cooling gas from reducing the interior temperature for the formation of the gas of rete of the first pipe to affect the carrying out of reaction.
Optionally, also comprise:
Second pipe, is positioned at the side of described first pipe;
When passing into gas in described first pipe, in described second pipe, pass into cooling gas, the temperature of described cooling gas is less than the temperature of the gas for the formation of rete.
Optionally, by being connected with the first pipe scanning substrate surface for the formation of rete gas, a flood rete is formed on the surface of the substrate.
Optionally, described first pipe is single hole pipe.
Optionally, described single hole pipe is circular hole pipe, and described circular hole pipe is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate.
Optionally, described first pipe is perforated tube, and comprise multiple pipeline, the described gas for the formation of rete passes into each pipeline described respectively.
Optionally, described pipeline is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate.
Optionally, described second pipe is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate.
Optionally, also comprise: the gas in described first pipe is heated.
Optionally, pass into the gas for the formation of rete in described first pipe before, also comprise: the described gas for the formation of rete is heated.
Optionally, the gas used when the described gas for the formation of rete is and utilizes chemical vapour deposition to form rete.
Optionally, the described gas for the formation of rete is utilize plasma activated chemical vapour deposition or strengthen the gas used when plasma activated chemical vapour deposition forms rete;
Before gas for the formation of rete is passed into the first pipe, also comprise ionizations such as the described gases for the formation of rete; Or, ionization such as grade is carried out to the gas for the formation of rete passed in described first pipe; Or, after the gas for the formation of rete flows out the first pipe, ionization such as grade is carried out to the gas for the formation of rete.
Optionally, described first pipe is outside equipped with the first coil being wound around described first pipe, in described first coil, pass into direct current.
Optionally, described pipe described first arranges the second coil being wound around described first pipe outward, and in described second coil, pass into alternating-current, described alternating-current is used for carrying out ionization such as grade to the gas for the formation of rete passed in described first pipe;
Or arrange electrode at described first pipe near the mouth of pipe of substrate, described electrode is used for carrying out ionization such as grade to the gas for the formation of rete of outflow first pipe.
Optionally, described rete is the rete formed in the rete or last part technology formed in semi-conductor FEOL.
Optionally, described rete is medium layer or conductive layer.
Compared with prior art, the present invention has the following advantages:
The technical program forms the method for rete, first above substrate, arranges the first pipe; In described first pipe, pass into the gas for the formation of rete, make the described gas for the formation of rete arrive described substrate in bundle, formation of deposits rete on the position that the gas in bundle arrives.Because gas arrives substrate surface in bundle, but not gas arrives whole substrate surface as prior art, therefore, even if high for the formation of the temperature of the gas of rete, after arriving surface, heat also can comparatively fast distribute, the temperature of substrate would not be made like this to raise, also would not affect the device of other non-refractories in substrate.That is, the technical program can be implemented in low temperature environment the method realizing being formed high temperature film.
In a particular embodiment, after the first pipe scans whole substrate, namely can realize forming a flood rete on the surface of the substrate.
In a particular embodiment, the second pipe can be established on the first pipe side, between described second pipe and the first pipe, there is gap; When passing into gas in described first pipe, in the second pipe, pass into cooling gas, make the arrival of described cooling gas for the formation of the surrounding of the gas in-position of rete.Or, at outer sheathed second pipe of the first pipe, between the second pipe and the first pipe, there is gap; When passing into gas in described first pipe, in described gap, pass into cooling gas, the temperature of described cooling gas is less than the temperature of the gas for the formation of rete, to reach the object reducing base reservoir temperature; And described first pipe is the poor conductor of heat to described cooling gas, prevent cooling gas from reducing the interior temperature for the formation of the gas of rete of the first pipe to affect the carrying out of reaction.Temperature due to cooling gas is less than the gas for the formation of rete, after the gas for the formation of rete reaches substrate, this cooling gas arrives the surrounding for the formation of the gas in-position of rete, the effect reducing base reservoir temperature further can be played, can better prevent other devices suprabasil from temperatures involved like this.
In a particular embodiment, when with plasma activated chemical vapour deposition or when increasing plasma activated chemical vapour deposition formation rete, before gas passes into the first pipe, ionization such as grade can be carried out to gas; Or after gas passes into the first pipe, ionization such as grade is carried out to the gas in the first pipe; Also after gas flows out the first pipe, ionization such as grade can be carried out to gas.Wherein, when being plasma body in the first pipe, can at outer the first coil arranging winding first pipe of the first pipe, direct current is passed in this first coil, this direct current can retrain the flow direction of plasma body in the first pipe, prevent from mutually colliding between the tube wall of plasma collision first pipe or plasma body, thus reduce the probability that neutralization occurs plasma body, keep the density of plasma body.
Accompanying drawing explanation
Fig. 1 strengthens the method schematic diagram that plasma activated chemical vapour deposition forms rete in prior art;
Fig. 2 is the schematic flow sheet of the method for the formation rete of the specific embodiment of the invention;
Fig. 3 is the perspective view of the method for the formation rete of first embodiment of the invention;
Fig. 4 is the cross-sectional view of the method for the formation rete of first embodiment of the invention;
Fig. 5 is the diagrammatic cross-section forming a flood rete in first embodiment of the invention on the surface of substrate;
Fig. 6 is the perspective view of the first pipe 30a of second embodiment of the invention;
Fig. 7 is the first pipe of third embodiment of the invention and the perspective view of the second pipe;
Fig. 8 is the first pipe of fourth embodiment of the invention and the perspective view of the second pipe;
Fig. 9 is the first pipe of fifth embodiment of the invention and the perspective view of the second pipe.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public embodiment.
Fig. 2 is the schematic flow sheet of the method for the formation rete of the specific embodiment of the invention, and with reference to figure 2, the method for the formation rete of the specific embodiment of the invention, comprising:
Step S21, provides substrate;
Step S22, side arranges the first pipe on the substrate, and described first pipe has first mouth of pipe and second mouth of pipe, and described first mouth of pipe is relative with described substrate;
Step S23, passes into the gas for the formation of rete by described second mouth of pipe in described first pipe, makes the described gas for the formation of rete arrive described substrate in bundle, so that the position arrived at the gas in bundle to form rete.
First embodiment
Fig. 3 is the perspective view of the method for the formation rete of first embodiment of the invention, Fig. 4 is the cross-sectional view of the method for the formation rete of first embodiment of the invention, in conjunction with reference to figure 3 and Fig. 4, the method for the formation rete of first embodiment of the invention is specially:
Perform step S21, substrate 20 is provided.The material of this substrate 20 can be silicon single crystal (Si), monocrystalline germanium (Ge), SiGe (GeSi) or silicon carbide (SiC); Also can be silicon-on-insulator (SOI) or germanium on insulator (GOI); Or can also be other material, such as gallium arsenide etc. III-V compounds of group.In substrate 20, be formed with device architecture, concrete device architecture, determines according to practical situation.
Perform step S22, above described substrate 20, arrange the first pipe 30, first pipe 30 have first mouth of pipe and second mouth of pipe (not carrying out label to first mouth of pipe and second mouth of pipe in figure), wherein first mouth of pipe is relative with substrate 20.First pipe 30 is 1 micron to 1 centimetre near the distance between first mouth of pipe and substrate 20 of substrate 20.First pipe 30 is single hole pipe, and this single hole pipe can be circular hole pipe, square hole pipe, slotted eye pipe or tri-angle-holed pipe etc.When for circular hole pipe, this single hole pipe is 1 micron to 1 centimetre near the mouth of pipe i.e. diameter of first mouth of pipe of substrate 20.First pipe 30 can be straight tube, can be also bend pipe, can set according to actual needs, be shown as straight tube in figure.
Perform step S23, in described first pipe 30, pass into the gas 40 for the formation of rete, make the described gas 40 for the formation of rete arrive described substrate 20 in bundle, so that the position arrived at the gas in bundle to form rete 211.
In first embodiment, gas 40 for the formation of rete is the gas being used for being formed rete in chemical vapor deposition method, this chemical vapour deposition can be common chemical vapour deposition, also can for strengthening plasma activated chemical vapour deposition, also can be plasma activated chemical vapour deposition, also can be low-pressure chemical vapor deposition, and well known to a person skilled in the art other chemical gaseous phase depositing process.
When the gas used in chemical vapor deposition method needs to heat, before gas 40 passes into the first pipe 30, gas 40 can be heated, again gas 40 is passed into the first pipe 30 afterwards.Also can the gas 40 passed in the first pipe 30 be heated.
When using plasma activated chemical vapour deposition technique or strengthen plasma activated chemical vapour deposition technique formation rete, the gas forming rete is needed to carry out ionization such as grade, before gas for the formation of rete can being passed into the first pipe, by ionizations such as the described gases for the formation of rete, namely first utilization waits ionization device by the ionization such as gas 40 grade for the formation of rete, and then is passed in the first pipe by plasma body.Also can be that ionization such as grade is carried out to the gas for the formation of rete passed in described first pipe, after being about to pass into the first pipe for the formation of the gas of rete, ionization such as grade be carried out to the gas in the first pipe; Concrete method can be: at outer the second coil (not shown) arranging described first pipe of winding of described first pipe, in described second coil, pass into alternating-current, the gas for the formation of rete passed in described first pipe is carried out ionization such as grade and becomes plasma body by described alternating-current.Can also be, after the gas for the formation of rete flows out the first pipe, ionization such as grade is carried out to the gas for the formation of rete and makes it become plasma body; Concrete existing mode can be: arrange electrode at described first pipe near the mouth of pipe of substrate, described electrode is used for carrying out ionization such as grade to the gas for the formation of rete of outflow first pipe.
With reference to figure 4, if gas 40(gas 40 is waited ionization, then for plasma body) reach substrate 20 surface in bundle after, only on the position that it arrives, form rete 211, other positions on the substrate 20 can not form rete.Because gas arrives substrate surface in bundle, but not gas arrives whole substrate surface as prior art, therefore, even if high for the formation of the temperature of the gas of rete, after arriving surface, heat also can comparatively fast distribute, the temperature of substrate would not be made like this to raise, also would not affect the device of other non-refractories that substrate is formed.That is, the technical program can be implemented in low temperature environment the method realizing being formed high temperature film.
Fig. 5 is the diagrammatic cross-section forming a flood rete 21 in first embodiment of the invention on the surface of substrate 20, with reference to figure 5, if make the whole surface of substrate 20 forms one deck rete, if gas 40(gas will be connected with waited ionization, then for plasma body) the first pipe 30 scan the surface of substrate 20, form a flood rete 21 on the surface in substrate 20.Concrete, the direction that the first pipe 30 scans substrate can set according to practical situation, and the scanning speed that the first pipe 30 scans substrate can be determined according to the speed forming rete 211.
In first embodiment, the quantity arranging the first pipe 30 on the substrate 20 can be one, also can be more than one.
Due in chemical vapor deposition method, the gas for the formation of rete is incessantly a kind of, all can pass in first pipe by all gas for the formation of rete; Also can be that arrange multiple the first pipe be mutually close to, the gas for the formation of rete passes in multiple first pipe respectively.
Second embodiment
Fig. 6 is the perspective view of the first pipe 30a of second embodiment of the invention, with reference to figure 6, in the second embodiment, first pipe 30a is perforated tube, comprise the outer tube 32a of multiple pipeline 31a and encirclement pipeline 31a, between outer tube 32a and pipeline 31a, can gap be had, also can be very close to each other.The shape of outer tube 32a is identical with the shape of the first pipe 30 in the first embodiment, does not repeat at this.The shape of pipeline 31a is identical with the shape of the first pipe 30 in the first embodiment; The shape of pipeline 31a can be identical with the shape of outer tube 32a, also can be not identical with the shape of outer tube 32a.
In a second embodiment, the gas for the formation of rete passes in each pipeline 31a respectively, passes into a kind of gas in a pipeline 31a, can arrange the quantity of pipeline 31a according to the kind of the gas for the formation of rete.Certainly, the kind of the gas passed in a pipeline 31a is not limited to one, also can be to pass into two kinds of gases in a pipeline 31a, passes into a kind of gas in other pipeline 31a.About the situation of kind passing into gas in pipeline 31a, various combination can be carried out according to the actual requirements, be not limited to situation listed herein.
The first pipe 30a of the second embodiment is utilized to form the method for rete, identical with the first embodiment, do not repeat at this.
3rd embodiment
Fig. 7 is the first pipe of third embodiment of the invention and the perspective view of the second pipe, and with reference to figure 7, compared with the first embodiment, in the third embodiment, outer sheathed second pipe 50 of the first pipe 30, has gap 60 between described second pipe 50 and the first pipe 30; When passing into the gas 40 for the formation of rete in described first pipe 30, in described gap, pass into cooling gas 70, make the arrival of described cooling gas for the formation of the surrounding of gas 40 in-position of rete.The temperature of this cooling gas is less than the gas for the formation of rete, and the temperature of concrete cooling gas can limit according to the actual requirements.The kind of cooling gas 70 is not limit, only otherwise affect the formation of rete.In this embodiment, because cooling gas is looped around around the gas for the formation of rete, tube wall between the two by means of only the first pipe 30 separates, if effect of heat insulation difference and the thermal conductivity of the tube wall of the first pipe 30 are good, then cooling gas 70 can reduce the temperature of reactive material in the first pipe 30 and gas or plasma body, thus impact forms the carrying out of the reaction of rete, therefore, the tube wall of the first pipe 30 should be the poor conductor of heat, prevents cooling gas 70 from reducing the temperature of the reactive material in the first pipe.
After the gas for the formation of rete reaches substrate, this cooling gas arrives the surrounding for the formation of the gas in-position of rete, can play the effect reducing base reservoir temperature further, can better prevent other devices suprabasil from temperatures involved like this.
Wherein, the aperture of the second pipe 50 is greater than the aperture of the first pipe 30, and specifically, pore size and the shape of the second pipe 50 all do not limit, and leads to for cooling gas flow as long as have gap between the second pipe and the first pipe.The end surface shape of the second pipe can be different shape, usually selects the second pipe identical with the shape of the first pipe.When the first pipe scanning substrate 20 surface, the second pipe also needs and then the first pipe scanning substrate surface.
Other are identical with the first embodiment, do not repeat at this.
In addition, in the 3rd embodiment, the first pipe 30 also can be the perforated tube in the second embodiment.
In 4th embodiment
Fig. 8 is the first pipe of third embodiment of the invention and the perspective view of the second pipe, with reference to figure 8, compared with the 3rd embodiment, second pipe 50a is arranged at described first pipe 30 side, when passing into gas 40 in the first pipe 30, in the second pipe 50a, pass into cooling gas 70, pass into the advantage of cooling gas 70 see the 3rd embodiment.Quantity about the second pipe 50a does not limit, distance between described second pipe and described first pipe is more preferably greater than 0, that is, the first pipe had better not contact with the tube wall of the second pipe, and cooling gas can be avoided like this to reduce the temperature of the reactive material in the first pipe 30.Second pipe 50a is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate, and the second pipe 50a is 1 micron to 1 centimetre near the distance between the mouth of pipe and substrate of substrate.
5th embodiment
Fig. 9 is the first pipe of fifth embodiment of the invention and the perspective view of the second pipe, with reference to figure 9, compared with the 3rd embodiment, in the 5th embodiment, first pipe 30 is outside equipped with the first coil 80 being wound around described first pipe, when the gas for the formation of rete is waited ionization to become plasma body when passing in the first pipe, or, after passing in the first pipe the gas passed into for the formation of rete, after the isolations such as gas being become plasma body in the first pipe, direct current is passed in the first coil 80, this direct current can retrain the flow direction of plasma body in the first pipe, prevent from mutually colliding between the tube wall of plasma collision first pipe or plasma body, thus reduce the probability that neutralization occurs plasma body, keep the density of plasma body.
Other are identical with the 3rd embodiment, do not repeat at this.
Need to have a talk about and bright be, the invention is not restricted to the above embodiment enumerated, such as: in the present invention, in the first embodiment, the second embodiment, also the first coil being wound around described first pipe can be set outside the first pipe, when being plasma body in described first pipe, in described first coil, pass into direct current.
In the present invention, rete can be the rete formed in the rete or last part technology formed in FEOL in semiconductor technology.Concrete, rete can in FEOL be medium layer or conductive layer, also can be in last part technology be medium layer or conductive layer.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (16)
1. form a method for rete, it is characterized in that, comprising:
Substrate is provided;
Side arranges the first pipe on the substrate, and described first pipe has first mouth of pipe and second mouth of pipe, and described first mouth of pipe is relative with described substrate;
In described first pipe, pass into the gas for the formation of rete by described second mouth of pipe, make the described gas for the formation of rete arrive described substrate in bundle, so that the position arrived at the gas in bundle to form rete;
By being connected with the first pipe scanning substrate surface for the formation of rete gas, form a flood rete on the surface of the substrate.
2. the method forming rete as claimed in claim 1, is characterized in that, also comprise:
At outer sheathed second pipe of described first pipe, between described second pipe and the first pipe, there is gap;
When passing into gas in described first pipe, in described gap, pass into cooling gas, the temperature of described cooling gas is less than the temperature of the gas for the formation of rete, to reach the object reducing base reservoir temperature; And described first pipe is the poor conductor of heat to described cooling gas, prevent cooling gas from reducing the interior temperature for the formation of the gas of rete of the first pipe to affect the carrying out of reaction.
3. the method forming rete as claimed in claim 1, is characterized in that, also comprise:
Second pipe, is positioned at the side of described first pipe;
When passing into gas in described first pipe, in described second pipe, pass into cooling gas, the temperature of described cooling gas is less than the temperature of the gas for the formation of rete.
4. the method forming rete as claimed in claim 1, is characterized in that, described first pipe is single hole pipe.
5. the method forming rete as claimed in claim 4, it is characterized in that, described single hole pipe is circular hole pipe, and described circular hole pipe is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate.
6. the method forming rete as claimed in claim 1, is characterized in that, described first pipe is perforated tube, and comprise multiple pipeline, the described gas for the formation of rete passes into each pipeline described respectively.
7. the method forming rete as claimed in claim 6, it is characterized in that, described pipeline is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate.
8. form the method for rete as claimed in claim 2 or claim 3, it is characterized in that, described second pipe is 1 micron to 1 centimetre near the diameter of the mouth of pipe of substrate.
9. the method forming rete as claimed in claim 1, is characterized in that, also comprise: heat the gas in described first pipe.
10. the method forming rete as claimed in claim 1, is characterized in that, before passing into the gas for the formation of rete, also comprise in described first pipe: heat the described gas for the formation of rete.
11. methods forming rete as claimed in claim 1, is characterized in that, the gas used when the described gas for the formation of rete is and utilizes chemical vapour deposition to form rete.
12. methods forming rete as claimed in claim 1, is characterized in that, the described gas for the formation of rete is utilize plasma activated chemical vapour deposition or strengthen the gas used when plasma activated chemical vapour deposition forms rete;
Before gas for the formation of rete is passed into the first pipe, also comprise ionizations such as the described gases for the formation of rete; Or, ionization such as grade is carried out to the gas for the formation of rete passed in described first pipe; Or, after the gas for the formation of rete flows out the first pipe, ionization such as grade is carried out to the gas for the formation of rete.
13. methods forming rete as claimed in claim 12, it is characterized in that, described first pipe is outside equipped with the first coil being wound around described first pipe, in described first coil, pass into direct current.
14. methods forming rete as claimed in claim 12, it is characterized in that, described pipe described first arranges the second coil being wound around described first pipe outward, in described second coil, pass into alternating-current, described alternating-current is used for carrying out ionization such as grade to the gas for the formation of rete passed in described first pipe;
Or arrange electrode at described first pipe near the mouth of pipe of substrate, described electrode is used for carrying out ionization such as grade to the gas for the formation of rete of outflow first pipe.
15. methods forming rete as claimed in claim 1, it is characterized in that, described rete is the rete formed in the rete or last part technology formed in semi-conductor FEOL.
16. methods forming rete as claimed in claim 15, it is characterized in that, described rete is medium layer or conductive layer.
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| DE112010000724T8 (en) * | 2009-01-09 | 2013-04-18 | Ulvac, Inc. | Plasma processing apparatus and plasma CVD film forming method |
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