CN103422068B - A kind of polysilicon membrane producing apparatus and method - Google Patents
A kind of polysilicon membrane producing apparatus and method Download PDFInfo
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- CN103422068B CN103422068B CN201210163732.3A CN201210163732A CN103422068B CN 103422068 B CN103422068 B CN 103422068B CN 201210163732 A CN201210163732 A CN 201210163732A CN 103422068 B CN103422068 B CN 103422068B
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Abstract
The invention discloses a kind of polysilicon membrane producing apparatus, the grain size of the polysilicon membrane be provided for and thickness are consistent respectively, improve polysilicon membrane quality.Described equipment comprises: the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe passing into described interior pipe, for passing into reactant gases to described interior pipe, in described inlet pipe, every root inlet pipe corresponds to the position being provided with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The flow director that quantity is equal with described inlet pipe quantity, is arranged in the gas piping of described inlet pipe connection, for controlling the gas flow in every root inlet pipe respectively.The invention also discloses method for manufacturing polycrystalline silicon thin film.
Description
Technical field
The present invention relates to semiconductor chip fabrication process technical field, particularly a kind of polysilicon membrane producing apparatus and method.
Background technology
Polysilicon deposition reaction formula is as follows: SiH
4(g) → Si (s)+2H
2(g).In polysilicon growth, the control of the film thickness uniformity of polysilicon membrane is very important, and it relies upon temperature distribution in reaction, reaction gas pressure, the isoparametric allotment of reactant gases flow velocity.Polysilicon electrically and resistance, except with mix impurity concentration and be inversely proportional to, and grain size is also relevant.Generally speaking, crystal grain is large and to mix impurity concentration height person resistance low, otherwise crystal grain is little and to mix impurity concentration low person resistance high.Grain size increases with the increase of film thickness, and temperature of reaction is higher, and crystal grain is larger.
Traditional polysilicon deposition device, as shown in Figure 1A, Figure 1B is traditional quartzy inlet pipe vertical view to the vertical view of horizontal low-pressure vapor phase deposit (LPCVD) boiler tube, and Fig. 1 C is stove tail sealing cover side-view.Reactant gases passes into boiler tube by the quartzy inlet pipe of shown in Figure 1B, because fire door and stove tail (exhaust side) Gas concentration distribution there are differences, furnace exhaust gas bulk concentration is larger, consistent in order to ensure polysilicon thickness, general temperature head is as compensation, fire door is generally adjusted to Gradient distribution to the temperature distribution of stove tail, the temperature contrast of fire door, nearly 30 degree to about 40 degree of stove tail.Although this just causes fire door the same with the thickness of the wafer (i.e. polysilicon) that stove tail is placed, the size of the polysilicon grain finally obtained is different, and temperature is higher, and crystal grain is larger.And, four brilliant boats are generally had to may be used for placing wafer in the interior pipe of the horizontal furnace tube shown in Figure 1A, but in actual production, if require higher to the polysilicon produced, then traditional production method can only be selected wafer fixed placement on the position of one to two brilliant boats, generally be placed on mid-way, greatly reduce production efficiency like this.
Summary of the invention
The embodiment of the present invention provides a kind of polysilicon membrane producing apparatus and method, and the grain size of the polysilicon membrane be provided for and thickness are consistent respectively, improve polysilicon membrane quality.
A kind of polysilicon membrane producing apparatus, comprise boiler tube, described boiler tube comprises interior pipe, and be provided with the brilliant boat for placing for depositing polysilicon thin film wafers in described interior pipe, described equipment also comprises:
Pass into the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe of described interior pipe, for passing into reactant gases to described interior pipe, in described inlet pipe, every root inlet pipe corresponds to the position being provided with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The division board that magnitude setting is equal with described brilliant boat quantity in described interior pipe, is isolated into the cavity that quantity is equal with described brilliant boat quantity by described interior pipe;
The flow director that quantity is equal with described inlet pipe quantity, is arranged in the gas piping be connected with described inlet pipe respectively, for controlling the gas flow in every root inlet pipe.
A kind of method for manufacturing polycrystalline silicon thin film, comprises the following steps:
Reactant gases is passed into respectively in the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe passing into described interior pipe, described inlet pipe corresponds to the position being placed with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The division board that magnitude setting is equal with described brilliant boat quantity in described interior pipe, is isolated into the cavity that quantity is equal with described brilliant boat quantity by described interior pipe;
The flow director be arranged in the gas piping be connected with described inlet pipe controls the gas flow in every root inlet pipe respectively, obtains polysilicon membrane.
Polysilicon membrane producing apparatus in the embodiment of the present invention comprises the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe passing into described interior pipe, for passing into reactant gases to described interior pipe, in described inlet pipe, every root inlet pipe corresponds to the position being provided with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The flow director that quantity is equal with described inlet pipe quantity, is arranged in the gas piping be connected with described inlet pipe respectively, for controlling the gas flow in every root inlet pipe.Flow director can control the gas flow of every root inlet pipe respectively, makes the thickness of the polysilicon membrane obtained consistent.And because gas flow is even, without the need to fire door and stove tail set temperature poor, make fire door consistent with stove tail temperature, make the grain size of the polysilicon membrane obtained consistent, the requirement generating high resistance polysilicon product can be met, substantially increase production efficiency, improve the quality of the polysilicon membrane of production.
Accompanying drawing explanation
Figure 1A is the vertical view of LPCVD boiler tube in prior art;
Figure 1B is inlet pipe vertical view in prior art;
Fig. 1 C is stove tail sealing cover side-view in prior art;
Fig. 2 is a kind of polysilicon membrane producing apparatus vertical view in the embodiment of the present invention;
Fig. 3 A is the polysilicon membrane producing apparatus vertical view after arranging division board in the embodiment of the present invention;
Fig. 3 B is division board sectional view in the embodiment of the present invention;
Fig. 4 is the polysilicon membrane producing apparatus vertical view after offering interior pipe venting port in the embodiment of the present invention;
Fig. 5 is another kind of polysilicon membrane producing apparatus vertical view in the embodiment of the present invention;
Fig. 6 is one group of division board sectional view in the embodiment of the present invention;
Fig. 7 is the main method schema that in the embodiment of the present invention, polysilicon manufactures.
Embodiment
Polysilicon membrane producing apparatus in the embodiment of the present invention comprises the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe passing into described interior pipe, for passing into reactant gases to described interior pipe, in described inlet pipe, every root inlet pipe corresponds to the position being provided with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The flow director that quantity is equal with described inlet pipe quantity, is arranged in the gas piping be connected with described inlet pipe respectively, for controlling the gas flow in every root inlet pipe.Flow director can control the gas flow of every root inlet pipe respectively, makes the thickness of the polysilicon membrane obtained consistent.And because gas flow is even, without the need to fire door and stove tail set temperature poor, make fire door consistent with stove tail temperature, make the grain size of the polysilicon membrane obtained consistent, the requirement generating high resistance polysilicon product can be met, substantially increase production efficiency, improve the quality of the polysilicon membrane of production.
See Fig. 2, the invention provides a kind of polysilicon membrane producing apparatus, it comprises boiler tube, described boiler tube comprises interior pipe 202 and outer tube, described interior pipe 202 is coated in described outer tube, and described equipment can also comprise the inlet pipe 201 equal with the brilliant boat quantity arranged in described interior pipe and flow director that pass into described interior pipe 202.Described equipment can be horizontal low-pressure vapor phase deposition apparatus.
Inlet pipe 201, for passing into reactant gases to described interior pipe 202, described inlet pipe corresponds to the position being placed with brilliant boat in described interior pipe 202 and has inlet mouth, as namely the small circle in inlet pipe in Fig. 2 201 represents inlet mouth.
In interior pipe 202 except inlet pipe 201, also insert two silicon carbide (SiC) stove slurries, stove slurry overcoat has quartz socket tube 203, stove slurry is used for the brilliant boat 204 of fixed placement, brilliant boat 204 may be used for depositing polysilicon thin film wafers, brilliant boat 204 can place polysilicon membrane wafer to be manufactured, each brilliant boat 204 can be placed 25 described polysilicon membrane wafers.In the embodiment of the present invention, be described to be provided with four brilliant boats 204 in described interior pipe 202, these four brilliant boats are evenly distributed on two stove slurries 203 by 204 positions.
In Fig. 2, small circle in inlet pipe 201 is the inlet mouth offered, the position of the inlet mouth wherein in every root inlet pipe 201 all corresponds respectively to the position of a brilliant boat 204, to make the reactant gases that passes in an inlet pipe 201 polysilicon membrane wafer just in time on a corresponding brilliant boat 204.
The quantity of flow director can be equal with the quantity of inlet pipe 201, and such as, there to be four inlet pipe 201 to be described in the embodiment of the present invention, then the quantity of flow director also can be four.Each flow director is arranged in the gas piping be connected with every root inlet pipe 201 respectively, for controlling the gas flow in every root inlet pipe 201 respectively.Preferably, flow director in the embodiment of the present invention can be MFC (MassFlowController, mass flow controller), it can control gas flow automatically, namely user can carry out flow set as required, MFC can automatically by constant flow in set(ting)value, even if system pressure have fluctuation or envrionment temperature change, gas flow also can not be made to depart from set(ting)value.
The identical length of the every root inlet pipe 201 in Fig. 2 is same.See Fig. 3 A, can magnitude setting is equal with described brilliant boat 204 quantity in described interior pipe 202 division board 205, described interior pipe 202 is isolated into multiple cavitys that quantity is equal with described brilliant boat 204 quantity, in the embodiment of the present invention, division board 205 can be quartzy division board.In Fig. 3 A, be that interior pipe 202 has been isolated into four cavitys.After being kept apart by interior pipe 202, can see in figure 3 a, have an inlet pipe 201 in each cavity, the position of the inlet mouth in every root inlet pipe 201 all corresponds respectively to a brilliant boat 204.
See Fig. 3 B, be the sectional view of a division board 205, two middle circular holes are the quartz socket tube 203 of stove slurry in pipe 202 in inserting, and inlet pipe 201 can be inserted by this division board 205 lower grooves.
See Fig. 4, after interior pipe 202 is isolated into multiple cavity, above each cavity, namely on pipe 202, pipe venting port 206 in one can be offered respectively, make reactant gases unnecessary in cavity directly can enter outer tube by respective interior pipe venting port 206, then discharge from outer tube, reactant gases can not be made to remain in interior pipe 202, affect gas concentration.Fig. 4 is vertical view, and interior pipe venting port 206 is opened on interior pipe 202, but because being vertical view, be therefore drawn in inlet pipe 201.The size of the interior pipe venting port 206 above each cavity can not be identical, because the gas concentration of stove tail may be larger, therefore in stove tail direction, the area of pipe venting port 206 can be comparatively large, and from stove tail to fire door, the area of interior pipe venting port 206 can in decline trend gradually.
In the embodiment of the present invention, the length of inlet pipe 201 can also be set to different lengths, be described there to be four inlet pipe 201, as shown in Figure 5, the length of every root inlet pipe 201 all can be different, starting point in the insertion of an inlet pipe 201 in pipe 202 can be stove tail, and terminal can be the position of last inlet mouth in this inlet pipe, and last inlet mouth in an inlet pipe 201 can refer to distance stove tail inlet mouth farthest in this inlet pipe 201.
If arrange the length of inlet pipe 201 according to Fig. 5, the quantity of the inlet pipe 201 passed through in each division board 205 lower grooves then arranged may be different, described groove size also can corresponding difference, and division board 205 its lower grooves more by inlet pipe 201 can be larger.As shown in Figure 6, be the sectional view of one group of division board 205, be from left to right followed successively by from close stove tail gradually to the division board 205 near fire door.
The manufacture method of polysilicon membrane in the embodiment of the present invention is introduced below by way of idiographic flow.
See Fig. 7, the main method flow process that in the embodiment of the present invention, polysilicon membrane manufactures is as follows:
Step 701: pass into reactant gases respectively in the inlet pipe 201 equal with brilliant boat 204 quantity arranged in described interior pipe 202 passing into described interior pipe 202, described inlet pipe 201 corresponds to the position being placed with brilliant boat 204 in described interior pipe 202 and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe 201 boat 204 brilliant in is respectively corresponding.
Step 702: the flow director be arranged in the gas piping be connected with described inlet pipe 201 controls the gas flow in every root inlet pipe 201 respectively, obtains polysilicon membrane.
Polysilicon membrane producing apparatus in the embodiment of the present invention comprises the inlet pipe 201 equal with the brilliant boat quantity arranged in described interior pipe 202 passing into described interior pipe 202, for passing into reactant gases to described interior pipe 202, in described inlet pipe 201, every root inlet pipe 201 corresponds to the position being provided with brilliant boat 204 in described interior pipe 202 and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe 201 boat 204 brilliant in is respectively corresponding; The flow director that quantity is equal with described inlet pipe 201 quantity, is arranged in the gas piping be connected with described inlet pipe 201, for controlling the gas flow in every root inlet pipe 201 respectively.In described interior pipe 202, pass into the inlet pipe 201 equal with brilliant boat 204 quantity, flow director can control the gas flow of every root inlet pipe 201 respectively, makes the thickness of the polysilicon membrane obtained consistent.And because gas flow is even, without the need to fire door and stove tail set temperature poor, make fire door consistent with stove tail temperature, make the grain size of the polysilicon membrane obtained consistent, the requirement generating high resistance polysilicon product can be met, substantially increase production efficiency, improve the quality of the polysilicon membrane of production.
The inlet mouth that every root inlet pipe 201 is offered can correspond to a brilliant boat 204, and the gas flow in each inlet pipe 201 all can regulate, then can regulate according to the actual flow of separation chamber each in boiler tube, the grain size of the polysilicon membrane produced, thickness etc. are consistent, respectively to obtain preferably product.
By division board 205, interior pipe is isolated into multiple cavity, can effectively avoids residue reactant gas flow to make furnace exhaust gas bulk concentration too high to stove tail.Pipe 202 is all offered interior pipe venting port 206 in above each cavity, make residue reactant gases be discharged into outer tube by interior pipe venting port 206, directly discharge from outer tube, avoid residual gas and remain in interior pipe, the gas concentration in impact in pipe 202.
The length of each inlet pipe 201 can be set to identical, also can be set to difference.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. a polysilicon membrane producing apparatus, comprises boiler tube, and described boiler tube comprises interior pipe, being provided with the brilliant boat for placing for depositing polysilicon thin film wafers, it is characterized in that, also comprise in described interior pipe:
Pass into the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe of described interior pipe, for passing into reactant gases to described interior pipe, in described inlet pipe, every root inlet pipe corresponds to the position being provided with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The division board that magnitude setting is equal with described brilliant boat quantity in described interior pipe, is isolated into the cavity that quantity is equal with described brilliant boat quantity by described interior pipe;
The flow director that quantity is equal with described inlet pipe quantity, is arranged in the gas piping be connected with described inlet pipe respectively, for controlling the gas flow in every root inlet pipe.
2. polysilicon membrane producing apparatus as claimed in claim 1, it is characterized in that, the length of each inlet pipe is equal.
3. polysilicon membrane producing apparatus as claimed in claim 1, is characterized in that, the length of every root inlet pipe is for from stove tail, and on it, stove tail described in distance is farthest the inlet mouth of.
4. polysilicon membrane producing apparatus as claimed in claim 1, it is characterized in that, described division board is quartzy division board.
5. polysilicon membrane producing apparatus as claimed in claim 1, is characterized in that, the described interior pipe corresponding to each described cavity is offered pipe venting port respectively in.
6. polysilicon membrane producing apparatus as claimed in claim 5, is characterized in that, from stove tail to fire door, the area of described interior pipe venting port tapers off trend.
7. polysilicon membrane producing apparatus as claimed in claim 1, it is characterized in that, described flow director is mass flow controller MFC.
8. a method for manufacturing polycrystalline silicon thin film, is characterized in that, comprises the following steps:
Reactant gases is passed into respectively in the inlet pipe equal with the brilliant boat quantity arranged in described interior pipe passing into described interior pipe, described inlet pipe corresponds to the position being placed with brilliant boat in described interior pipe and have inlet mouth, wherein, the position of the position of the inlet mouth in every root inlet pipe boat brilliant in is respectively corresponding; The division board that magnitude setting is equal with described brilliant boat quantity in described interior pipe, is isolated into the cavity that quantity is equal with described brilliant boat quantity by described interior pipe;
The flow director be arranged in the gas piping that is connected with described inlet pipe controls the gas flow in every root inlet pipe respectively, obtains polysilicon membrane.
9. method for manufacturing polycrystalline silicon thin film as claimed in claim 8, is characterized in that, also comprise step: residue reactant gases is discharged by pipe venting port in described interior pipe is offered.
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| CN201210163732.3A CN103422068B (en) | 2012-05-24 | 2012-05-24 | A kind of polysilicon membrane producing apparatus and method |
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| CN201210163732.3A CN103422068B (en) | 2012-05-24 | 2012-05-24 | A kind of polysilicon membrane producing apparatus and method |
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| CN103422068B true CN103422068B (en) | 2015-11-18 |
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| CN105543955A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Vertical furnace pipe prepared from polysilicon and preparation method thereof |
| CN116083886A (en) * | 2021-11-05 | 2023-05-09 | 隆基绿能科技股份有限公司 | Air inflow control system and method, vapor deposition furnace and operation process thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101220468A (en) * | 2007-11-01 | 2008-07-16 | 中国科学院电工研究所 | Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell |
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| US20090233007A1 (en) * | 2008-03-17 | 2009-09-17 | Nanopv Technologies Inc. | Chemical vapor deposition reactor and method |
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| CN101220468A (en) * | 2007-11-01 | 2008-07-16 | 中国科学院电工研究所 | Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell |
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Effective date of registration: 20220718 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |