CN103414097B - A kind of laser amplifier - Google Patents
A kind of laser amplifier Download PDFInfo
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- CN103414097B CN103414097B CN201310348562.0A CN201310348562A CN103414097B CN 103414097 B CN103414097 B CN 103414097B CN 201310348562 A CN201310348562 A CN 201310348562A CN 103414097 B CN103414097 B CN 103414097B
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Abstract
The invention discloses a kind of laser amplifier, comprise slab laser crystal (1), the two ends of described slab laser crystal (1) length direction are respectively first end (11) and the second end (12), two sides of described slab laser crystal (1) width are fully reflecting surface (13), seed light (6) relatively fully reflecting surface (13) is injected from first end (11) obliquely, and penetrate from the second end (12), be provided with for relative the seed light (6) penetrating from the second end (12) fully reflecting surface (13) is reflected back to the second end (12) obliquely in a side of described the second end (12) end face, and the mirror assembly penetrating from first end (11). the present invention's efficiency simple in structure, with low cost, overlapping is high, extraction efficiency is high, can obtain the Laser output of high power, high light beam quality.
Description
Technical field
The present invention relates generally to laser amplification device field, relates in particular to a kind of slab laser amplifier.
Background technology
In order to obtain high-power Laser output, conventionally adopt laser amplifier to amplify laser signal. Traditional laser amplifier can produce serious thermal lensing effect and thermal-optical distortion effect under thermic load condition, beam quality is reduced, and power output is restricted. Now widely used slab laser crystal, due to upper and lower two the large surface radiatings of slab laser crystal, especially thermograde occurs on lath thickness direction and optical propagation direction is approximate parallel with thermograde direction, the impact of thermal lensing effect and thermal-optical distortion effect can be effectively reduced, beam quality can be taken into account again simultaneously so can obtain high power laser light output. Therefore, slab laser amplifying technique is a kind of important technology that obtains high power, high light beam quality laser. At present, this laser amplification technique is generally cut into 45° angle or Brewster angle inclined-plane by the two ends end face of slab laser crystal, make seed light tilt to inject from one end of lath laser crystal, between two sides of slab laser crystal, there is total reflection, indention light path is propagated, and finally tilts to penetrate from the other end. But this mode, because the overlapping efficiency of seed light and pumping gain region is not high, causes the extraction efficiency of laser amplifier lower, and therefore power output is still not high. So, how to obtain the new laser amplification technique of high-power and high-lighting beam quality Laser output still among constantly exploring.
Summary of the invention
The technical problem to be solved in the present invention is: the deficiency existing for prior art, provides that a kind of efficiency simple in structure, with low cost, overlapping is high, extraction efficiency is high, can obtain the laser amplifier of the Laser output of high power, high light beam quality.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of laser amplifier, comprise slab laser crystal, the two ends of described slab laser crystal length direction are respectively first end and the second end, two sides of described slab laser crystal width are fully reflecting surface, the relative fully reflecting surface of seed light is injected and goes out from the second end-fire from first end obliquely, is provided with the mirror assembly for relative the seed light going out from the second end-fire fully reflecting surface being reflected back obliquely to the second end and penetrating from first end in a side of described the second end end face.
As a further improvement on the present invention:
Described mirror assembly comprises two seed light speculums that are relative shape layout along slab laser crystal width.
Respectively be provided with two inclination tangent planes of injecting or penetrating for seed light at described first end and the second end, be located at respectively the junction of this end end face and two fully reflecting surfaces with two tangent planes of one end, and angle β between each tangent plane and corresponding fully reflecting surface is identical.
Described angle β is 5 degree～8 degree.
Also comprise filtering and pattern matching system for the seed light going out from the second end-fire being carried out to filtering and pattern match, described filtering and pattern matching system are positioned at a side of described the second end end face.
Described filtering and pattern matching system are going out from the second end-fire to the seed light light path being reflected back between the second end and near the position that is reflected back the second end.
Described filtering and pattern matching system comprise the first seed optical lens, filtering diaphragm, the second seed optical lens arranged successively along seed light light path.
Also comprise pumping system and the pump light reflection matching system for pump light is reflected, described pumping system and pump light reflection matching system lay respectively at the both sides of slab laser crystal length direction or width.
Described pump light reflection matching system comprises pump light lens and the pump light speculum arranged successively along pump light light path.
Compared with prior art, the invention has the advantages that:
1, laser amplifier of the present invention, simple in structure, with low cost, by mirror assembly, the seed light penetrating from lath laser crystal is injected in slab laser crystal again, forming round trip light path propagates, increase seed light at the intracrystalline total order of reflection of slab laser, thereby the overlapping efficiency that has improved seed light and pumping gain region, has improved extraction efficiency, can obtain the Laser output of high power, high light beam quality.
2, laser amplifier of the present invention, because the angle β between tangent plane and corresponding fully reflecting surface is very little, seed light in the mode perpendicular to tangent plane from tangent plane is injected, will be approximately perpendicular to fully reflecting surface in the internal reflection of slab laser crystal, further increase the order of reflection of seed light, thereby the overlapping efficiency that has improved seed light and pumping gain region, has improved extraction efficiency.
3, laser amplifier of the present invention, by filtering and pattern matching system, can carry out pattern match by the seed light light beam penetrating from lath laser crystal, and filter the high fdrequency component in light beam, to ensure again to inject the beam quality of slab laser crystal.
4, laser amplifier of the present invention, reflects matching system by pump light, pump light can be reflected back to slab laser crystal again, to be fully absorbed, improves efficiency and the capacity usage ratio of laser amplifier.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention 1.
Fig. 2 is the structural representation of the embodiment of the present invention 1 middle plate strip laser crystal.
Fig. 3 be in Fig. 2 A to structural representation.
Fig. 4 is the structural representation of filtering and pattern matching system in the embodiment of the present invention 1.
Fig. 5 is the structural representation of pump light reflection matching system in the embodiment of the present invention 1.
Fig. 6 is the laser optical path schematic diagram of the embodiment of the present invention 2.
Fig. 7 is the structural representation of the embodiment of the present invention 3.
Fig. 8 is the structural representation of the embodiment of the present invention 3 middle plate strip laser crystals.
Marginal data: 1, slab laser crystal; 11, first end; 12, the second end; 13, fully reflecting surface; 14, radiating surface; 15, tangent plane; 2, pumping system; 21, pump light; 3, pump light reflection matching system; 31, pump light lens; 32, pump light speculum; 4, filtering and pattern matching system; 41, the first seed optical lens; 42, filtering diaphragm; 43, the second seed optical lens; 5, seed light speculum; 6, seed light.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1:
As shown in Figure 1, laser amplifier of the present invention, comprises pumping system 2 and slab laser crystal 1, and pumping system 2 is used for slab laser crystal 1 to carry out pumping, slab laser crystal 1 absorptive pumping light 21 causes population inversion, makes the interior stored energy of slab laser crystal 1 form gain region. The two ends of slab laser crystal 1 length direction are respectively first end 11 and the second end 12, and two sides of slab laser crystal 1 width are fully reflecting surface 13, and two sides of slab laser crystal 1 thickness direction are that radiating surface 14(is referring to Fig. 3). Radiating surface 14 adopts conventional red copper water cooling plant, and passes through indium close contact between radiating surface 14 and red copper. A side at the second end 12 end faces is provided with mirror assembly, when work, the relative fully reflecting surface 13 of seed light 6 is injected, between two fully reflecting surfaces 13, multiple total reflection is occurred from first end 11 obliquely, and indention light path, in the interior propagation of slab laser crystal 1, then penetrates from the second end 12; The seed light 6 penetrating from the second end 12 is under the effect of mirror assembly, fully reflecting surface 13 is reflected back obliquely the second end 12, again between two fully reflecting surfaces 13, multiple total reflection occurs relatively again, indention light path, in the interior propagation of slab laser crystal 1, finally penetrates from first end 11. The mode that this round trip light path is propagated, greatly increase the total order of reflection of seed light 6 in slab laser crystal 1, thereby improve the overlapping efficiency of seed light 6 with pumping gain region, improved extraction efficiency, can obtain the Laser output of high power, high light beam quality.
In the present embodiment, mirror assembly comprises two seed light speculums 5 that are relative shape layout along slab laser crystal 1 width.
As shown in Figure 2, in the present embodiment, respectively be provided with two inclination tangent planes 15 of injecting or penetrating for seed light 6 at slab laser crystal 1 first end 11 and the second end 12, be located at respectively the junction of this end end face and two fully reflecting surfaces 13 with two tangent planes 15 of one end, and angle β between each tangent plane 15 and corresponding fully reflecting surface 13 is identical. When work, seed light 6, to inject slab laser crystal 1 perpendicular to the mode of first end 11 one of them tangent plane 15, after fully reflecting surface 13 multiple reflections of slab laser crystal 1, penetrates from a tangent plane 15 of the second end 12; The seed light 6 penetrating is again injected slab laser crystal 1 by another tangent plane 15 from the second end 12 under the effect of two seed light speculums 5, after fully reflecting surface 13 multiple reflections of slab laser crystal 1, finally penetrate from another tangent plane 15 of first end 11.
Angle β is preferably 5 degree～8 degree, because angle is less, seed light 6 in the mode perpendicular to a certain tangent plane 15 from tangent plane 15 is injected, will be approximately perpendicular to fully reflecting surface 13 in 1 internal reflection of slab laser crystal, further increase the order of reflection of seed light 6, thereby improve the overlapping efficiency of seed light 6 with pumping gain region, improved extraction efficiency.
In the present embodiment, angle β is 8 degree, and the projected length of tangent plane 15 on corresponding fully reflecting surface 13 is 1.3mm.
In the present embodiment, also comprise the filtering and the pattern matching system 4 that carry out filtering and pattern match for the seed light 6 to penetrating from the second end 12, filtering and pattern matching system 4 are positioned at a side of the second end 12 end faces. Particularly, filtering and pattern matching system 4 are penetrating from the second end 12 to seed light 6 light paths that are reflected back between the second end 12 and near the position that is reflected back the second end 12, to avoid seed light 6 distance between filtering and pattern matching system 4 and the second end 12 long because of diffraction effect mode mismatch.
As shown in Figure 4, filtering and pattern matching system 4 comprise the first seed optical lens 41, filtering diaphragm 42, the second seed optical lens 43 arranged successively along seed light 6 light paths. Because seed light 6 width of light beam under fuel factor effect after 1 reflection of slab laser crystal changes, beam quality declines, the seed light 6 penetrating from the second end 12 is successively by the first seed optical lens 41, filtering diaphragm 42, the second seed optical lens 43, beam mode is mated again, filtering diaphragm 42 filters the high fdrequency component in light beam, thereby ensures again to inject the beam quality of slab laser crystal 1.
In the present embodiment, also comprise the pump light reflection matching system 3 for pump light 21 is reflected, pumping system 2 is positioned at a side of slab laser crystal 1 second end 12 end faces, and pump light reflection matching system 3 is positioned at a side of first end 11 end faces. In the present embodiment, the end face of first end 11 and the second end 12 is coated with pump light high transmittance film, and fully reflecting surface 13 is coated with seed light high-reflecting film, and four tangent planes 15 are coated with seed light high transmittance film. As shown in Figure 5, pump light reflection matching system 3 comprises pump light lens 31 and the pump light speculum 32 arranged successively along pump light 21 light paths. The gain non-uniform phenomenon that causes pump light 21 to be concentrated very much in the initial incident of the second end 12 end face in order to alleviate the high-absorbility of slab laser crystal 1, the present embodiment adopts the lower slab laser crystal 1 of doping content. But can cause so the incomplete absorption of pump light 21, a large amount of pump lights 21 transmit and form pump energy loss from first end 11 end faces. By pump light reflection matching system 3 is set, pump light 21 is from first end 11 end faces penetrate, successively by pump light lens 31 and pump light speculum 32, the pump light 21 that pump light speculum 32 is come transmission reflects, make it again to enter slab laser crystal 1 from first end 11 end faces, pump light 21 is fully absorbed, thereby improves the efficiency capacity usage ratio of laser amplifier.
In the present embodiment, slab laser crystal 1 material is Nd:YAG, and as shown in Figure 2 and Figure 3, slab laser crystal 1 is of a size of length l=10mm, width d=12mm, and thickness h=2mm, doping content 0.3%, crystal is the cutting of [111] direction. The pump light 21 of centre wavelength 808nm enters slab laser crystal 1 with the size of 11mm × 1.2mm from the second end 12 end faces, calculate 808nm pumping source and be absorbed 91% after for the first time by slab laser crystal 1, other 9% again enters slab laser crystal 1 from first end 11 end faces after 3 reflections of pump light reflection matching system is absorbed, and more than 99.3% energy of final pump light is absorbed.
In the present embodiment, adopt the 808nm pumping source pumping of power 350W, psec seed light 6 to mean power 60W, repetition rate 80MHz is amplified, and the width of light beam 1.2mm of seed light 6 calculates overlapping efficiency and reaches 89.6%, theoretical power output 206.5W, extraction efficiency 41.6%.
Embodiment 2:
As shown in Figure 6, the structure of the present embodiment and embodiment 1 are roughly the same, and difference is: slab laser crystal 1 is of a size of length l=11.5mm, width d=12mm, thickness h=2mm. Because the length of slab laser crystal 1 is different from embodiment 1, the therefore order of reflection of seed light 6 in slab laser crystal 1 and also not identical (principle of reflection of seed light is identical with embodiment 1, just repeats no more at this) of embodiment 1.
Embodiment 3:
As shown in Figure 7, Figure 8, the difference of the structure of the present embodiment and embodiment 1 is: slab laser crystal 1 material is Nd:YVO4, the dimensions length l=12.5mm of slab laser crystal 1, width d=10.2mm, thickness h=2mm, doping content 1%, crystal isαDirection cutting, length 12.5mm iscDirection of principal axis. Pumping system 2 and pump light reflection matching system 3 are arranged in the both sides of slab laser crystal width.
In the present embodiment, angle β is 7 degree, and the projected length of tangent plane 15 on corresponding fully reflecting surface 13 is 1.25mm. Fully reflecting surface 13 plates pump light high transmittance film and seed light high-reflecting film, and tangent plane 15 plates seed light high transmittance film.
The pump light of centre wavelength 888nm enters slab laser crystal 1 with the size of 9.5mm × 1.2mm from one of them fully reflecting surface 13, calculate 888nm pumping source and be absorbed 84.7% after for the first time by slab laser crystal 1, other 15.3% again enters slab laser crystal 1 from another one fully reflecting surface after 3 reflections of pump light reflection matching system is absorbed, and more than 97.6% energy of final pump light is absorbed.
It in the present embodiment, is the impact that as far as possible reduces fuel factor, the pump power adopting is 200W, pumping source wavelength 888nm, psec seed light 6 to mean power 60W, repetition rate 80MHz is amplified, the width of light beam 1.2mm of seed light 6, calculate overlapping efficiency and reach 91.2%, theoretical power output 182.3W, extraction efficiency 61.2%.
Below be only the preferred embodiment of the present invention, protection scope of the present invention is also not only confined to above-described embodiment, and all technical schemes belonging under thinking of the present invention all belong to protection scope of the present invention. It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. a laser amplifier, comprise slab laser crystal (1), the two ends of described slab laser crystal (1) length direction are respectively first end (11) and the second end (12), two sides of described slab laser crystal (1) width are fully reflecting surface (13), seed light (6) relatively fully reflecting surface (13) is injected from first end (11) obliquely, and penetrate from the second end (12), it is characterized in that: be provided with for relative the seed light (6) penetrating from the second end (12) fully reflecting surface (13) is reflected back to the second end (12) obliquely in a side of described the second end (12) end face, and the mirror assembly penetrating from first end (11), respectively be provided with two inclination tangent planes (15) of injecting or penetrating for seed light (6) at described first end (11) and the second end (12), be located at respectively the junction of this end end face and two fully reflecting surfaces (13) with two tangent planes (15) of one end, and the angle β between each tangent plane (15) and corresponding fully reflecting surface (13) is identical, described angle β is 5 degree～8 degree.
2. laser amplifier according to claim 1, is characterized in that: described mirror assembly comprises two the seed light speculums (5) that are relative shape layout along slab laser crystal (1) width.
3. laser amplifier according to claim 1 and 2, it is characterized in that: also comprise filtering and pattern matching system (4) for the seed light (6) penetrating from the second end (12) being carried out to filtering and pattern match, described filtering and pattern matching system (4) are positioned at a side of described the second end (12) end face.
4. laser amplifier according to claim 3, is characterized in that: described filtering and pattern matching system (4) are positioned at from the second end (12) and penetrate to seed light (6) light path being reflected back between the second end (12) and near the position that is reflected back the second end (12).
5. laser amplifier according to claim 3, is characterized in that: described filtering and pattern matching system (4) comprise the first seed optical lens (41), filtering diaphragm (42), the second seed optical lens (43) arranged successively along seed light (6) light path.
6. laser amplifier according to claim 1 and 2, it is characterized in that: also comprise pumping system (2) and the pump light reflection matching system (3) for pump light (21) is reflected, described pumping system (2) and pump light reflection matching system (3) lay respectively at the both sides of slab laser crystal (1) length direction or width.
7. laser amplifier according to claim 6, is characterized in that: described pump light reflection matching system (3) comprises pump light lens (31) and the pump light speculum (32) arranged successively along pump light (21) light path.
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| CN201310348562.0A CN103414097B (en) | 2013-08-12 | 2013-08-12 | A kind of laser amplifier |
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| CN201310348562.0A CN103414097B (en) | 2013-08-12 | 2013-08-12 | A kind of laser amplifier |
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| CN103414097B true CN103414097B (en) | 2016-05-11 |
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| CN104021522A (en) * | 2014-04-28 | 2014-09-03 | 中国科学院上海光学精密机械研究所 | Target image separating device and method based on intensity correlated imaging |
| CN104319602A (en) * | 2014-11-05 | 2015-01-28 | 中国工程物理研究院激光聚变研究中心 | Strip laser amplifier and laser output method thereof |
| CN107946890B (en) * | 2017-11-21 | 2019-08-02 | 湖北久之洋红外系统股份有限公司 | A kind of mechanism of diaphragm based on Zig-Zag lath |
| CN112152061A (en) * | 2019-06-26 | 2020-12-29 | 中国科学院理化技术研究所 | Laser amplifier |
Citations (4)
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| CN1398028A (en) * | 2002-08-23 | 2003-02-19 | 清华大学 | Corner pumping method for plate strip and its solid laser gain module |
| CN101017954A (en) * | 2006-08-01 | 2007-08-15 | 清华大学 | The laser amplifier and laser resonance cavity with the multiple reflection folding light channel structure |
| CN101877454A (en) * | 2010-04-16 | 2010-11-03 | 北京工业大学 | Multi-pass laser amplification method and gain module thereof |
| CN102916327A (en) * | 2012-10-25 | 2013-02-06 | 北京理工大学 | Total reflection type slab laser amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS60254686A (en) * | 1984-05-31 | 1985-12-16 | Agency Of Ind Science & Technol | Solid-state laser element |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1398028A (en) * | 2002-08-23 | 2003-02-19 | 清华大学 | Corner pumping method for plate strip and its solid laser gain module |
| CN101017954A (en) * | 2006-08-01 | 2007-08-15 | 清华大学 | The laser amplifier and laser resonance cavity with the multiple reflection folding light channel structure |
| CN101877454A (en) * | 2010-04-16 | 2010-11-03 | 北京工业大学 | Multi-pass laser amplification method and gain module thereof |
| CN102916327A (en) * | 2012-10-25 | 2013-02-06 | 北京理工大学 | Total reflection type slab laser amplifier |
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